KR20070017584A - Mems array, manufacturing method thereof, and mems device manufacturing method based on the same - Google Patents

Abstract

For example, a plurality of elements such as the resistor 10, the condenser 20, the coil 30, and the switches 41 to 44 connecting the respective elements are integrated on the substrate S, so that each element can be arbitrarily connected. Form a MEMS array. The switches 41 to 44 may use transistor switches or mechanical switches. The on / off of the switches 41 to 44 of the MEMS array can be replaced with the on / off of the wiring to manufacture the MEMS device.

Description

MEMS array and manufacturing method thereof, and manufacturing method of MEMS device based thereon {MEMS ARRAY, MANUFACTURING METHOD THEREOF, AND MEMS DEVICE MANUFACTURING METHOD BASED ON THE SAME}

1 is a cross-sectional view showing a cross section of a first embodiment of a MEMS array;

2 shows the appearance of a first embodiment of a MEMS array;

3 shows an equivalent circuit of a first embodiment of a MEMS array,

4 is a sectional view taken along line A-A in FIG. 1, showing a layout of a source drain of a switch of a first embodiment of a MEMS array;

5 is a cross-sectional view taken along line B-B in FIG. 1, showing a wiring of the M1 layer of the first embodiment of the MEMS array;

FIG. 6 is a cross-sectional view taken along line C-C in FIG. 1, showing a wiring of the M3 layer of the first embodiment of the MEMS array; FIG.

7 shows an example of on / off of the switch of the first embodiment of the MEMS array;

8 shows an example of a MEMS device which is a static circuit manufactured using the MEMS array;

9 shows an example of a MEMS device which is a dynamic circuit manufactured using the MEMS array;

10 shows a second embodiment of a MEMS array;

FIG. 11 is a manufacturing process (a) of the second embodiment of a MEMS array, showing the manufacturing process up to the LSI section; FIG.

FIG. 12 is a manufacturing step (b) of the second embodiment of the MEMS array, showing an insulating film forming step;

FIG. 13 is a manufacturing step (c) of the second embodiment of the MEMS array, showing a step before forming a capacitor lower electrode and a via;

Fig. 14 is a view showing the manufacturing process (d) of the second embodiment of the MEMS array, showing the capacitor lower electrode and via forming process;

FIG. 15 is a manufacturing step (e) of the second embodiment of the MEMS array, showing an insulating film deposition step; FIG.

16 shows manufacturing step (f) of the second embodiment of a MEMS array, showing the steps before via formation;

FIG. 17 is a manufacturing step (g) of the second embodiment of the MEMS array, showing a via forming step; FIG.

FIG. 18 is a manufacturing process (h) of a second embodiment of a MEMS array, showing a process before forming a capacitor, an upper electrode, and a coil;

FIG. 19 is a manufacturing process (i) of the second embodiment of the MEMS array, showing a process of forming a capacitor, an upper electrode, and a coil;

20 is a manufacturing step (j) of the second embodiment of the MEMS array, showing an insulating film forming step;

FIG. 21 is a manufacturing process k of a second embodiment of a MEMS array, showing the steps before formation of vias;

FIG. 22 is a manufacturing process (l) of the second embodiment of the MEMS array, showing a process for forming vias;

FIG. 23 is a manufacturing step (m) of the second embodiment of the MEMS array, showing an insulating film forming step;

24 is a manufacturing step (n) of the second embodiment of the MEMS array, showing a step before forming the input / output unit and the switch driving electrode of each element;

Fig. 25 is a manufacturing step (o) of the second embodiment of the MEMS array, showing the steps of forming the input / output unit and the switch driving electrode of each element;

Fig. 26 is a manufacturing step (p) of the second embodiment of the MEMS array, showing the step of forming the Cu cap layer;

27 is a manufacturing step (q) of the second embodiment of the MEMS array, showing the pre-molding process of the thin film for resistance;

28 is a manufacturing step (r) of the second embodiment of the MEMS array, showing the film forming process of the resistance thin film;

FIG. 29 is a manufacturing step (s) of the second embodiment of the MEMS array, showing a step of forming a resistance element; FIG.

30 is a view showing the passivation film formation process as a manufacturing process t of the second embodiment of the MEMS array;

31 is a manufacturing step (u) of the second embodiment of the MEMS array, showing the etching process for the upper part of the switch;

Fig. 32 is a view showing the switch conducting portion etching process as the manufacturing process (v) of the second embodiment of the MEMS array;

33 is a manufacturing step (w) of the second embodiment of the MEMS array, showing the switch forming step;

Fig. 34 is a manufacturing process (x) of the second embodiment of the MEMS array, showing the switch upper release process;

35 is a manufacturing process (y) of the second embodiment of the MEMS array, showing the switch upper release process;

36 shows another example of the electrostatic switch used in the second embodiment of the MEMS array.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique using a micro electro-mechanical system (MEMS), and more particularly to a micromachine to a MEMS array having a plurality of circuit elements and switches.

MEMS is expected to develop not only electronic circuits but also other elements such as sensors and actuators on a substrate such as Si to have a high level of functionality. Conventionally, as a technique for manufacturing a MEMS device, (1) manufacturing by installing an individual element such as a sensor manufactured using the technique of MEMS on a substrate, and (2) separately manufacturing as a dedicated MEMS circuit. Things are known.

However, in the case of (1), even if MEMS is used to manufacture individual devices, it is difficult to greatly reduce the size due to the limitations in mounting, and there is a limit in device performance and reduction in mounting area, and further wiring. There is also the problem of delay. In addition, in the case of (2), since it is a dedicated product, an increase in development time and an increase in development cost cannot be avoided as compared with (1).

It is an object of the present invention to provide a programmable MEMS array which can be miniaturized and can reduce development time and development costs in view of such a problem, and also provides a method of manufacturing a MEMS device using the same.

SUMMARY OF THE INVENTION In order to solve the above problems, the present invention provides a MEMS array in which a plurality of elements and switches for connecting the elements are arranged on a substrate, and each element can be arbitrarily wired.

Moreover, the MEMS array of this invention is manufactured by providing a some element in at least one layer, and providing a switch in another layer. The switch of the MEMS array of the present invention may be constituted by a transistor or may be constituted by a mechanical switch.

According to the present invention, by simply selecting the on / off of the switch, the desired circuit can be configured, and it can meet various demands.

In addition, according to the present invention, a MEMS device can be manufactured based on a MEMS array. In other words, the MEMS device is manufactured by determining the connection state of each switch of the MEMS array to form a desired circuit, and then executing the wiring in accordance with the connection state of the switch.

By doing in this way, the MEMS device which can reduce the electric power for maintaining the connection state of a switch can be mass-produced.

EMBODIMENT OF THE INVENTION Hereinafter, it demonstrates, referring an accompanying drawing for this invention.

(First embodiment)

1 to 6, any wiring programmable MEMS array in the first embodiment of the present invention will be described.

1 is a partial cross-sectional view of a randomly connectable MEMS array of the present example, and FIG. 2 shows an overall schematic of the MEMS array of the present invention. FIG. 3 is a diagram showing an equivalent circuit of this example in which a cross section is shown in FIG. 1.

As shown in the overall schematic diagram of the MEMS array of FIG. 2, the arbitrarily connectable MEMS array of the present invention is a semiconductor wafer process that integrates about 300,000 arbitrary connectable circuit elements on a 10 mm ² Si chip, for example. 3, in this example, three LCR circuits are arranged in the region T of 10 mu m square, and one circuit is formed.

1 is a cross-sectional view of the LCR circuit shown by the thick line of the equivalent circuit shown in FIG.

As shown in FIG. 1, in the MEMS array of this example, source drain regions of the transistors 41 to 44 are formed on the substrate S, wiring layers M0 to M4 are formed thereon, and a passivation layer thereon. (P) is installed. The LCR circuit includes a switch 41 to four transistors (FETs) formed of the resistors 10 formed on the wiring layers M0 to M1, the capacitors 20, the coils 30, and the via wirings formed on the substrate S. 44) is configured to be connected in series.

In addition, in FIG. 1, the wiring for driving the transistor which comprises the switch 41 etc. is abbreviate | omitted.

In the present example, three LCRs can be connected by a plurality of switches including switches 41 to 44 to each of adjacent elements, and a switch 45 arranged in parallel to each element so that each element can be bypassed at the bottom thereof. ), And any combination of the elements is possible.

That is, in the MEMS array composed of the LCR circuit of the present example, a plurality of resistors, capacitors, and coils are regularly arranged in a plane (two dimensions), and each element can be arbitrarily connected through a switch.

4 shows a top view of the substrate S cut by the AA line in FIG. 1, FIG. 5 shows a plan view of the wiring layer M1 cut by the BB line, and FIG. 6 shows a wiring layer cut by the CC line. The top view of M3 is shown.

4, the outline of the arrangement of the source and drain of the transistors constituting the switch provided in the substrate S is shown. The arrangement of the source drain corresponding to the switches 41 to 44 is shown by the same numeral.

The wiring layer M0 is a wiring layer in which the gate electrode of the transistor is formed and a part of the wiring to the source drain is formed. The wiring via is connected to the resistor 12 against the switch 41, the wiring 23 to the upper electrode 21 of the capacitor 20, and the capacitor 20 to the switch 42. The wiring 24 to the lower electrode 22, the wirings 31 and 32 for the coil 30, and the wirings 51 and 52 for the switches 43 and 44 are formed.

The wiring layer M1 is shown in FIG. 5, and the wiring 12 portion of the resistor 10, the wiring 23 to the upper electrode 21 of the capacitor 20, and the wiring to the lower electrode 22 ( 24, the wirings 31 and 32 of the coil 30, and the wirings 51 and 52 of the switches 43 and 44 are arranged. The wirings 12, 23, 24, 31, and 32 also serve as wirings connected by switches for parallel connection.

The wiring layer M2 is a wiring layer in which a part of the wiring of each element and the switch is formed like other wiring layers. As wiring, since it is the same as wiring layer M0, description is abbreviate | omitted.

The wiring layer M3 is shown in FIG. 6, the wiring portions 11 and 12 of the resistor 10, the wiring 23 to the upper electrode of the capacitor 20, the lower electrode 22 of the capacitor 20, The wiring parts 51 and 52 to the coil 30 and the switches 43 and 44 are arrange | positioned. The wirings 11 and 51 also serve as wirings in parallel connection. The lower wiring (without reference numeral) is a bypass wiring.

A resistor 10 is provided in the wiring layer M4, an upper electrode 21 of the capacitor 20 is provided, and a passivation layer P is provided at the top thereof.

In addition, the structure of this layer is a simple example for description, and a layer structure, such as the number of layers, is not limited, and the kind of element is not limited to LCR, either. The element may be a circuit which can be a component of a desired electric and electronic circuit such as a high frequency filter circuit, and an appropriate one such as shape arrangement can be selected.

The manufacturing method of the MEMS array of this example is the same as the wafer process of Si, and a plurality of wiring layers are formed on the board | substrate S which forms a transistor switch. For example, formation of a passive element can also be manufactured using a well-known wafer process, such as being able to make it an appropriate shape with the material of a conductive layer.

As described above, in the MEMS array of this example, since a plurality of circuit elements are arranged so as to be able to be connected properly via a switch, a desired circuit can be freely configured only by determining on / off of each switch according to the designer's design. Can be.

Next, the manufacturing method of the MEMS device used when the circuit is comprised using the MEMS array of this invention and mass-production as a MEMS device after that is demonstrated.

The LCR circuit shown in FIG. 1 is taken as an example. FIG. 7 is a diagram showing on / off states of switches 41 to 44 in the circuit constructed by using the MEMS array of FIG.

That is, FIG. 7 shows the results of using the MEMS array according to the present invention and selecting on / off of the switch to a desired circuit. State (1) is an example of a static circuit that does not perform switching during circuit operation, and state (2) is an example of a dynamic circuit that may perform switching during circuit operation.

In the state (1) of the switch, the switch 41 is turned on, the switch 42 is turned off, the switch 43 is turned on, and the switch 44 is turned on. This state does not change during circuit operation. Therefore, for a switch that is always turned on, it is necessary to maintain the on state by applying a gate voltage, which is not economical considering power consumption.

Therefore, as shown in FIG. 8, the wiring layer M0 is changed into the wiring layer M0 'corresponding to the on / off state of the switch state, without forming a transistor switch in the substrate S. As shown in FIG. In other words, when the switches 41, 43, and 44 are switched on, the wiring 60 is executed to connect (short), and when the switch 42 is switched off, the wiring is not opened (open). In this way, the power can be saved and the product hardly breaks down.

Also in the manufacturing process of the MEMS device, if one dedicated mask is added, the manufacturing process of the MEMS array can be used, the transistor formation process can be omitted, and the substrate S can also be used at a low cost. Production can be manufactured with

State (2) of the switch is the same as state (1) except that the switch 43 can be used as a switchable switch. In this example, unlike in the case of state (1), the switches cannot be changed to short / open of wiring.

However, as shown in FIG. 9, in the case where the wiring layer M1a is added on the wiring layer M0 layer and kept in the on state like the switches 41 and 44, the wiring 60 is shorted. In the case of the switch 42, the circuit is disconnected without opening (open), and the voltage is not applied to the gate of the transistor. Vias may be provided so as to maintain previous wiring so as to obtain upper and lower contacts.

In this way, it is not necessary to apply a voltage to the transistor which is always on, and it is possible to reduce the power consumption, and to add the wiring layer M1a to the manufacturing process of the MEMS array also in the manufacturing process. You can do it.

(Second embodiment)

In the first embodiment, the switches connecting the adjacent elements are constituted by transistors. In this example, the switches are constituted by electrostatic switches which are mechanical switches. The driving transistor is required to operate the electrostatic switch, but the mechanical switch is advantageous in constructing a circuit using a MEMS array since the circuit characteristics are not changed on / off compared to the transistor switch.

Fig. 10 shows a partial cross-sectional view of the MEMS array of this example, with the substrate omitted. The same code | symbol was attached | subjected to the element which has the same function as 1st Example.

In Fig. 10, the wiring layers M0 to M4 and the passivation layer P on the substrate are shown. In addition, a CU cap layer (C) made of Si nitride or the like is provided between the layers to prevent copper from the wiring layer from diffusing into the insulating film to cause device defects. The electrostatic switches 41'-43 'which have a cantilever movable part are arrange | positioned at the outermost layer. The switch drivers 71 to 73 are connected to a transistor provided on a substrate (not shown) via wiring vias 74 to 76. When the electrostatic switches 41'-43 'apply a predetermined electric potential to the switch drive parts 71-73, a corresponding movable piece is attracted and closes the contact. Although not shown, a cover may be attached for protection of the switch and prevention of dust intrusion.

In addition, as in the first embodiment, each element of the resistor 10, the capacitor 20, and the coil 30 is formed, and the resistor 10, the switch 41 ', the capacitor 20, and the switch 42' are formed. ), The coil 30 and the switch 43 'can be connected in series, and can be connected to other adjacent elements not shown in the cross-sectional view of FIG. 10 via a switch, and each element can be arbitrarily connected. It is.

Hereinafter, with reference to FIGS. 11-35, the outline | summary of the manufacturing process is demonstrated. In addition, there is also a step in which description such as formation of a CU cap layer is omitted.

First, in Fig. 11 to Fig. 4, the steps (a) to (d) up to the formation of the wiring layer M1 are shown.

In the step (a) of FIG. 11, after forming a transistor for driving an electrostatic switch on a substrate (not shown), vias 74 to 76 for wiring are provided to form a wiring layer M0.

An insulating film is formed in step (b) of FIG. 12, and the insulating film is etched to form the lower electrode 22 and the via of the capacitor 20 in the step (c) of FIG. 13, and in the step (d) of FIG. Formation of the capacitor lower electrode and via wiring are performed to form the wiring layer M1.

15 to 17 show steps (e) to (g) up to the formation of vias in the wiring layer M2. An insulating film is formed in step (e) of FIG. 15, and the insulating film is etched to form vias in step (f) of FIG. 16, and vias 74 to 23 of the wiring layer M2 are performed in step (g) of FIG. 17. 76).

In the step (h) of FIG. 18, etching before formation of the capacitor upper electrode and the coil of the wiring layer M2 is illustrated. This was not formed at the same time as the vias 74 to 76 in the last step because it was necessary to leave the CU cap layer as a dielectric for the capacitor. Subsequently, the capacitor upper electrode 21 and the coil 30 are formed in step (l) of FIG. 19.

Via wiring of the wiring layer M3 is formed in the process (j) shown in FIG. 20, the process (k) and the process (l) shown in FIG. 21 and FIG. 22, respectively. In the wiring layer M3, the wirings 23 and 24 to the capacitor 20 and the wirings 31 and 32 to the coil 30 are formed together with the switch driving wirings 74 to 76.

The wiring layer M4 is formed in step (m) shown in FIG. 23, step (n) and step (o) shown in FIGS. 24 and 25, respectively. That is, an insulating film is formed in step (m) of FIG. 23, and the input / output portion of the resistor 10 (FIG. 10), the capacitor 20, and the coil 30 and the switch driving electrode are formed in the step (n) of FIG. 24. The portion is etched and the input / output units 11 and 12 of the resistor 10 (FIG. 10), the input / output units 25 and 26 of the capacitor 20 and the input / output unit of the coil 30 are processed in step (o) of FIG. 25. (33, 34) and switch driving electrodes 71 to 73 and the like are formed.

26 to 29 show a process of forming the resistor 10. First, CU cap layer C is formed into a film in process (p) of FIG. In step (q) in FIG. 27, the Cu cap layer C is etched to form a thin film forming portion for resistance. In the step (r) of FIG. 28, the resistance thin film R is formed on the entire surface, and only the portion used as the resistance is etched in the step (s) of FIG. 29 to form the resistor 10.

30 to 35 show a step of forming a switch from the formation of the passivation film P for protection.

In the step (t) of FIG. 30, a passivation film P for protection is formed on the entire upper surface. In step (u) of FIG. 31, etching is performed to install the upper portions of the switches 41 'to 43', and in step (v) of FIG. 32, etching is performed to install the conductive portions of the switches 41 'to 43'. Run A switch is then formed in step (w) of FIG. 33, the top of switches 41 ′ to 43 ′ is released in step (x) of FIG. 34, and switches 41 ′ to 43 ′ in step (y) of FIG. 35. ) Is completed by releasing the lower part.

In this way, the resistor 10, the condenser 20, and the coil 30 can be connected in series via the switches 41 'to 43'. In the point where many of these RCL series circuits are formed planarly (two-dimensional), it is the same as that of 1st Example, A switch can be selected, and a desired circuit can be comprised.

Since this example requires a transistor switch for driving an electrostatic switch, the process of installing an electrostatic switch is increased compared with the first embodiment, but in addition to the advantage of stabilizing circuit characteristics of using an electrostatic switch, There are the following advantages when manufacturing MEMS devices of static or dynamic circuits.

That is, when fabricating an actual circuit using the MEMS array of the present example and manufacturing a MEMS device composed of static circuits whose switches are always on or off, since the switches are formed on the uppermost layer, the switch which is the final process of manufacturing Instead of the forming step, a step of forming a wiring layer may be employed. In this respect, it is easier to manufacture than the first embodiment. If the switch driving transistor and the switch driving electrode are omitted and stored in the state before the wiring layer is formed, low cost and short delivery time can be realized.

Further, even when a dynamic circuit that leaves a part of the switch is manufactured as a MEMS device, the necessary portion of the switch is left as it is and the etching of the passivation film during the switch conduction portion etching shown in FIG. By selecting a location, a short circuit or a interrupting circuit can be formed, which is also easier than in the first embodiment. Until the formation of the switch, since the structure is the same as that of the MEMS array, it is not necessary to have a stock dedicated for the MEMS device and the cost can be reduced.

In addition, in the case of this example, although the electrostatic switch provided with a cantilever-type movable electrode and being attracted | sucked by an electrostatic force and being turned on was used, the electrostatic switch 90 shown in FIG. 36 can also be used. This is because the movable electrode 92 is attracted by the electrostatic force, short-circuited, and turned off by applying a voltage to the drive electrode 91. In addition, an appropriate switch can also be adopted.

In addition, although the electrostatic switch was arrange | positioned above the wiring layer, it can also be provided in a wiring layer.

In any of the first and second embodiments, the arrangement of the plurality of elements may be arranged in three dimensions or may be arranged arbitrarily.

The substrate of the MEMS array of the present invention may be formed by arranging other semiconductor circuits for signal processing, and the semiconductor circuit disposed on the semiconductor substrate may have a three-dimensional structure. In addition, a semiconductor circuit or device suitable for signal processing such as a microprocessor, a flash memory, or an EEPROM may be housed in the same package in which the MEMS device is housed. By adding such a semiconductor circuit or device, the degree of freedom in circuit construction is further increased, and a desired high performance MEMS element can be obtained.

As described above, since the arbitrarily connectable MEMS array of the present invention is programmable and versatile, a dedicated mask and a dedicated process are unnecessary, and a desired MEMS device can be developed at low cost only by specifying a wiring state. Restarting is also possible simply by resetting the switch on or off. In addition, since the on / off fixing portion of the switch can be manufactured by replacing the short / open of the wiring, it is possible to shorten the delivery time and reduce the power consumption of the semi-customized article. Even mass-produced products can be obtained with low power consumption and fewer failures. In addition, when pre-testing is performed on the MEMS array, since the circuits are almost the same, there is almost no deviation from the specification in the post-manufacturing test of the MEMS device, and the verification period of the device can be shortened.

Claims (23)

A MEMS array comprising a plurality of circuit elements and a switch of at least a number of the circuit elements connecting the circuit elements, wherein the circuit elements can be wired through the switches. On the input side and the output side of each of the circuit elements, a switch connected in series with neighboring columnar circuit elements, and a switch connected in parallel with adjacent circuit elements in a row; The circuit elements can be combined by determining the connection state of the switch. MEMS array. The method of claim 1, The switch connecting each circuit element is a semiconductor switch MEMS array. The method of claim 1, The switch connecting each circuit element is a mechanical switch MEMS array. The method of claim 1, A substrate and a wiring layer, wherein the switch is formed on the substrate, and each circuit element connected to the wiring layer via the switch is provided. MEMS array. The method of claim 4, wherein The substrate is provided with a driving unit for driving the switch MEMS array. The method of claim 5, The substrate further has a semiconductor circuit for signal processing MEMS array. The method of claim 6, The semiconductor circuit has a three-dimensional structure MEMS array. The method of claim 1, And a substrate and a wiring layer, wherein the wiring layer is provided with a switch for connecting the circuit elements and the circuit elements. MEMS array. The method of claim 8, The substrate is provided with a driving unit for driving the switch MEMS array. The method of claim 9, The substrate further has a semiconductor circuit for signal processing MEMS array. The method of claim 10, The semiconductor circuit has a three-dimensional structure MEMS array. The method of claim 1, A board and a wiring layer, wherein each of the circuit elements is provided on the wiring layer, and a switch connecting the circuit elements is provided on the wiring layer. MEMS array. The method of claim 12, The substrate is provided with a driving unit for driving the switch MEMS array. The method of claim 13, The substrate further has a semiconductor circuit for signal processing MEMS array. The method of claim 14, The semiconductor circuit has a three-dimensional structure MEMS array. The method of claim 1, Packaged by embedding semiconductor circuits in the same package MEMS array. In the manufacturing method of the MEMS array of Claim 4 provided with a wiring layer on a board | substrate, Forming a plurality of switches in said substrate; And forming a plurality of circuit elements connected to said wiring layer via said plurality of switches. Method of making a MEMS array. In the manufacturing method of the MEMS array of Claim 12 provided with a wiring layer on a board | substrate, Forming a plurality of circuit elements in the wiring layer; And installing a plurality of switches connecting the plurality of circuit elements to each other on the wiring layer. Method of making a MEMS array. In the manufacturing method of the MEMS array of Claim 12 provided with a wiring layer on a board | substrate, Forming a switch driver on the substrate; Forming a plurality of circuit elements in the wiring layer; And installing a plurality of switches connecting the plurality of circuit elements to each other on the wiring layer. Method of making a MEMS array. A manufacturing method of manufacturing a MEMS device on the basis of a MEMS array having a plurality of circuit elements and a switch connecting the circuit elements. Determining a connection state of each switch of the MEMS array; Forming a wiring layer for wiring according to the connection state of each switch, A switch connected in series with adjacent circuit elements adjacent to each other and a switch connected in parallel with adjacent circuit elements in a row adjacent to each other are provided on an input side and an output side of each circuit element. Method of manufacturing a MEMS device. A manufacturing method of manufacturing a MEMS device on the basis of a MEMS array having a plurality of circuit elements and a switch connecting the circuit elements. Determining a connection state of each switch of the MEMS array; Forming a wiring layer on the substrate of the MEMS device in accordance with the connection state of the switch; Forming a plurality of circuit elements in the same arrangement as the MEMS array on the wiring layer, A switch connected in series with adjacent circuit elements adjacent to each other and a switch connected in parallel with adjacent circuit elements in a row adjacent to each other are provided on an input side and an output side of each circuit element. Method of manufacturing a MEMS device. A manufacturing method of manufacturing a MEMS device on the basis of a MEMS array having a plurality of circuit elements and a switch connecting the circuit elements. Determining a connection state of each switch of the MEMS array; Installing a switch in a substrate of the MEMS device, Providing an additional wiring layer on the substrate of the MEMS device corresponding to the connection state of the switch, which short-circuits, cuts off or wires the switch, Providing a wiring layer on the additional wiring layer, the wiring layer arranging a plurality of circuit elements in the same arrangement as the MEMS array, A switch connected in series with adjacent circuit elements adjacent to each other and a switch connected in parallel with adjacent circuit elements in a row adjacent to each other are provided on an input side and an output side of each circuit element. Method of manufacturing a MEMS device. A manufacturing method of manufacturing a MEMS device on the basis of a MEMS array having a plurality of circuit elements and a switch connecting the circuit elements. Determining a connection state of each switch of the MEMS array; Forming a wiring layer for installing a plurality of circuit elements in the same arrangement as the MEMS array; Selectively forming a switch or a wiring on the wiring layer based on a connection state of each switch, A switch connected in series with circuit elements on adjacent columns and a switch connected in parallel with circuit elements on adjacent rows are provided on an input side and an output side of each circuit element. Method of manufacturing a MEMS device.

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