KR20060081648A - The flexible full-color display and its manufacturing method - Google Patents

Abstract

The present invention relates to a full color display that can be bent and a method of manufacturing the same, wherein a very thin silicon wafer that can be bent into a substrate of an organic light emitting device is used, and the encapsulation substrate of the organic light emitting device corresponds to a pixel of the organic light emitting device. It was developed to form a color conversion layer in the position to improve the color purity and light utilization efficiency of light;

A full color display having a top emitting structure; A flexible substrate that can be bent and a black mattress for blocking light between adjacent color filters are formed at the rear of the substrate, and a photoexcited diffusion layer is formed at the rear of the color filter, in which a light excitation material and a diffusion material are mixed. A sealing substrate; A very thin and flexible silicon wafer substrate, a reflector formed on the substrate, a transparent electrode formed on the reflector, and at least one or more wavelengths of blue or blue and non-blue wavelengths formed on the transparent electrode The organic light emitting layer having a wavelength, a transparent electrode formed on the organic light emitting layer, and an organic light emitting element composed of a transparent protective film formed on the transparent electrode and the flexible full-color display and a manufacturing method thereof It is about.

 display

Description

Flexible full-color organic light-emitting display and its manufacturing method {The flexible full-color display and its manufacturing method}

1 is a conceptual diagram according to an embodiment of the present invention

2 is a block diagram according to an embodiment of the present invention.

3a to 3b is a conceptual diagram showing a manufacturing process of the sealing substrate according to an embodiment of the present invention

4 is a conceptual diagram showing a display manufacturing process according to an embodiment of the present invention

5 is a conceptual diagram showing a conventional passive matrix organic light emitting device

6 is a conceptual diagram showing a conventional active matrix organic light emitting device

<Explanation of symbols for main parts of the drawings>

1: sealing board

     11: substrate 12, 13, 14: color filter

     15: black matrix 16: light excitation diffusion layer

2: organic light emitting device

     21 silicon wafer substrate 22 reflector

     23, 25: transparent electrode 24: organic light emitting layer

     26: protective film 27: thin film transistor

3: passive matrix organic light emitting device

     31 substrate 32 anode

     33 organic light emitting layer 34 cathode

4: active matrix organic light emitting device

     41 substrate 42 switching element

     43: insulating film 44: anode

     45 organic light emitting layer 46 cathode

5: sealing board manufacturing process

     51: filter forming step 52: optical excitation diffusion layer forming step

6: organic light emitting device formation process

     61: insulating layer forming step 62: reflector plate forming step

     63: forming the organic light emitting device 64: forming the protective film

7: Joining Process

     71: sealant

8: polishing process

     81: temporary substrate 82: grinder

9: sheet forming process

     91: plastic resin sheet

10: full color display

The present invention relates to a full-color display that can be bent and a method of manufacturing the same, and more specifically, using a very thin silicon wafer that can be bent to the substrate of the organic light emitting device, the encapsulation substrate of the organic light emitting device is organic light emitting The present invention relates to a bendable full color display developed in order to form a color conversion layer at a position corresponding to a pixel of an element to improve color purity and light utilization efficiency of light, and a manufacturing method thereof.

In general, the substrate of the organic light emitting device has been mainly used a glass substrate that is transparent, low penetration of moisture and oxygen, and not easy to change temperature, but easy to clean, but the glass substrate has a disadvantage of being fragile, There are many limitations in producing a flexible display such as a wearable display and a rolling display.

In order to produce a flexible display, research on the use of a flexible plastic substrate made of organic polymer resins such as PET, PC, and PES is being conducted, but as the polymer resin such as PET, PC, and PES, While the plastic substrates have the advantage of being able to bend, the high moisture permeability (about 1 to 10 ² g / m ² .day) has a disadvantage of significantly affecting the lifespan of the organic light emitting device, and thus the other protective layer on the substrate. (SiO _x , Si _x N _y, etc.) may be added to the process to be stacked. In addition, plastic substrates made of polymers such as PET, PC, and PES are difficult to clean by low hardness and corrosion resistance, and have glass transition temperatures (PET: T _g = 130 ° C, PC: T _g = 150 ° C, PES: T). _g = 220 ° C) is significantly lower than the glass substrate (T _g = 600 ??), so that deformation occurs during the deposition process of an organic material or metal. In addition, the thermal conductivity of the plastic substrates made of polymers such as PET, PC, PES, etc. is very low (about 8 times) compared to the glass substrate, so that the diffusion of heat generated from the device when the organic light emitting device is driven is not easy. It has a problem that the deterioration due to the heat of the fatal effect on the life of the organic light emitting device.

The organic light emitting device described above is generally classified into a passive matrix (PM) driving method and an active matrix (AM) driving method. 5 and 6 are conceptual views illustrating a conventional passive matrix organic light emitting diode and an active matrix organic light emitting diode. In the structure of the passive matrix organic light emitting device 3, a transparent anode 32 having a high work function is formed on the substrate 31, an organic light emitting layer 33 is formed on the transparent anode 32, and the organic light emitting layer 33 is formed. The cathode 34 is formed of a metal having a low work function. The active matrix organic light emitting diode 4 has a structure in which a separate switching element 42 is applied to a single pixel on the substrate 41, and an insulating layer 43 is formed to protect the switching element 42. The transparent anode 44, the organic light emitting layer 45, and the cathode 46 are formed on the insulating layer 43. The thin film transistor (TFT) is most widely used for the switching device 42.

The passive matrix organic light emitting diode has the advantages of simple structure and process and low cost and investment cost, but it is limited to small display having 1 ~ 2 ”size because of high resolution, large area, and high power consumption. In the case of a display of 2 "or larger, it is preferable to use an active matrix driving method to achieve a clear image quality and low power consumption of the organic light emitting diode.

However, the organic light emitting device configured as described above generally adopts a bottom emission method in which light generated from the organic light emitting layer is directed toward the substrate. In this case, the active matrix organic light emitting device has a portion in which a switching device (TFT) is formed. There is a problem in that the opening ratio of the area which is substantially prevented from being transmitted through is substantially lowered. In addition, the problem of lowering the aperture ratio becomes more serious as the high resolution is implemented.

The present invention was developed to solve the above problems, the object of which is to make a very thin silicon wafer to be a substrate that can be bent in order to manufacture a flexible display to serve as a perfect moisture / oxygen protective film (permeability: <10 ^-7 g / m ² .day) and easy to clean, high glass transition temperature, high thermal conductivity to effectively utilize.

It is also to provide a high resolution, low power display.

It is also an object of the present invention to provide a full color display and a method of manufacturing the same having excellent color purity and luminous efficiency.

In order to achieve the above object, the present invention provides a full color display having a top light emitting structure; A flexible substrate that can be bent and a black mattress for blocking light between adjacent color filters are formed at the rear of the substrate, and a photoexcited diffusion layer is formed at the rear of the color filter, in which a light excitation material and a diffusion material are mixed. A sealing substrate; A very thin and flexible silicon wafer substrate, a reflector formed on the substrate, a transparent electrode formed on the reflector, and at least one or more wavelengths of blue or blue and non-blue wavelengths formed on the transparent electrode A flexible full color display comprising an organic light emitting element having an organic light emitting layer having a wavelength, a transparent electrode formed on the organic light emitting layer, and a transparent protective film formed on the transparent electrode;

A filter forming step of forming a predetermined pattern with a black photoresist (BM) on a flexible substrate and then sequentially applying a color filter material of RGB, and selecting a light excitation diffusion layer or a color conversion material on the color filter upper surface. A process of manufacturing an encapsulation substrate including a step of forming an optical excitation diffusion layer in which one or more materials are sequentially introduced using a transparent photoresist; A reflector forming step of forming a reflector using a metal having good reflectivity on the silicon wafer substrate on which the thin film transistor is formed, forming a transparent electrode on the reflector, forming an organic light emitting layer on the transparent electrode, and forming a transparent electrode on the organic light emitting layer Forming an organic light emitting device; An organic light emitting device forming process including a protective film forming step of forming a transparent protective film on the transparent electrode; Combining the encapsulating substrate and the organic light emitting element to correspond to corresponding pixels to form a full color display; It relates to a flexible full color display manufacturing method comprising a series of polishing processes for thinly processing a substrate (silicon wafer) of the combined full color display using a grinder.

Accordingly, the configuration of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily understand and reproduce. 1 is a conceptual diagram according to an embodiment of the present invention. In general, a silicon wafer has a low water vapor transmission rate (<10 ^-7 g / m ² .day) due to the structure of a single crystal and serves as a perfect moisture / oxygen protective film. In addition, the silicon wafer is easier to handle in the previous process than the plastic substrates made of polymers such as PET, PC, PES, etc., and has a high glass transition temperature and high thermal conductivity. It has characteristics very suitable for luminous efficiency. The structure of the display according to the present invention utilizing such a silicon wafer as a substrate is a flexible substrate 11 that can be bent, and the rear of the substrate 11 between each adjacent color filter (12, 13, 14) A black mattress 15 for blocking light is formed, and an encapsulation substrate 1 having a light excitation diffusion layer 16 in which a photo excitation material and a diffusion material are mixed is formed behind the color filters 12, 13, and 14. ;

A very thin and flexible silicon wafer substrate 21, a reflector 22 formed on the substrate, a transparent electrode 23 formed on the reflector 22, and a blue formed on the transparent electrode 23. An organic light emitting layer 24 that emits light having a wavelength or a wavelength in which at least one of a blue wavelength and a wavelength other than blue is mixed, a transparent electrode 25 formed on the organic light emitting layer 24, and the transparent electrode ( 25 is composed of an organic light emitting element 2 composed of a transparent protective film 26 formed on.

In this case, the flexible substrate 11 formed on the encapsulation substrate 1 may be a very thin silicon wafer or an acrylic resin, polyester, polycarbonate, polymethylpentene, polystyrene acetate, polypropylene, AS resin, or transparent ABS resin. , Polybutadiene, ionomer, polysulfone, polybutene, hard vinyl chloride resin, EVA resin, polyethylene, polyether sulfone and the like. The flexible plastic substrate 11 has problems of high moisture permeability, low glass transition temperature, and low thermal conductivity compared to the silicon wafer as described above, but when used as an encapsulation substrate, the low glass transition temperature and low thermal conductivity This is not a problem in the process and the relatively high moisture permeability should be considered by comparing the cost of material with its performance.

In addition, the present invention is characterized by having a very excellent color purity and luminous efficiency by using the organic light emitting device of a single color light emission and the color conversion layer into which the photoexciting material is inserted into the upper surface of the color filter formed on the encapsulation substrate to produce a full color display do.

In addition, the present invention also provides an embodiment in which the silicon wafer substrate 21 is manufactured in an active matrix method in which a thin film transistor 27 (TFT) is formed to realize high resolution and low power consumption.

In addition, it has a front light emitting structure in which the reflector plate 22 is inserted between the silicon wafer substrate 21 and the transparent electrode 23 formed on the substrate so as to have a front light emitting structure that can increase the light efficiency of the display by increasing the aperture ratio. .

In addition, an insulating film, such as SiO _x , Si _x N _y , may be inserted between the reflecting plate 22 and the transparent electrode 23 to increase the adhesion between the reflecting plate 22 and the transparent electrode 23.

In the present invention, the photoexcited diffusion layer 16 absorbs a portion of light emitted from the light source from the organic light emitting layer 24 (having a wavelength of at least one of a blue wavelength or a blue wavelength and a wavelength other than blue). A light excitation material that emits light having a wavelength different from that of the emitted light, and transmits the remaining portion of the light emitted from the light source, wherein the light excitation material excites and amplifies the light emitted from the light source; The sheet is a thin sheet (film) made of a polymer resin, in the form of a transparent sheet in which a diffusion material for scattering and diffusing light emitted from the mixture is uniformly mixed. In addition, a precipitation inhibitor, an antifoaming agent, a binder, and the like are added during the manufacture of the light excitation diffusion layer 16 in order to improve the uniformity of the substance and particles or the formability of the sheet.

Photoexcitation materials that can be used in the photoexcitation diffusion layer 16 of the present invention largely include inorganic fluorescent materials, organic fluorescent materials, organic pigments, nanomaterials and the like. Representative photo-excited inorganic fluorescent materials are composed of phosphors doped with cerium (Y ₃ ) in Y ₃ Al ₅ O ₁₂ (YAG) in garnet-based (Gd) materials. Inorganic fluorescent substance to which may be used in the present invention is specifically _{(Y 1 -x- y Gd x Ce} y) 3 (Al 1 - z Ga z) 5 O 12; (Gd _{1 - x} Ce _x ) Sc ₂ Al ₅ O ₁₂ ; (x + y ≦ 1; 0 ≦ x ≦ 1; 0 ≦ y ≦ 1; 0 ≦ z ≦ 1) SrB ₄ O ₇ : Sm ^{2 +} ; ^{_{SrGa 2 S 4: Eu 2 +}} ; _{BaMg 2 Al 16 O 27: Eu} 2 +; (Sr, Mg, Ca, Ba, Zn) ₂ P ₂ O ₇ : Eu, Mn; (Ca, Sr, Ba, Mg) ₅ (PO ₄ ) ₃ (Cl, F, OH): Eu, Mn; (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (F, Cl, Br, OH): Eu ²⁺ ; (Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) ₆ (F, Cl, Br, OH): Eu ²⁺ , Mn ²⁺ ; (Sr, Ba, Ca) MgAl ₁₀ O ₁₇ : Eu, Mn; (Ba, Sr, Ca) MgAl ₁₀ O ₁₇ : Eu ²⁺ ; _{(Sr, Ca) 10 (PO} 4) 6 .nB 2 O 3: Eu 2 +; ( stage, 0 <n <1) Sr 4 Al 14 O 25: Eu; 3.5MgO.0.5MgF ₂ .GeO ₂ : Mn ⁴⁺ ; ZnS: Cu, Al; ZnS: Ag, Al; CaS: Ce; SrS: Ce; SrS: Eu; MgS: Eu; CaS: Eu; (Y, Tb, Lu, La, Gd) ₃ (Al, Sc, Ga, In) ₅ O ₁₂ : Ce, Pr, Sm; BaAl ₈ O ₁₃ : Eu; 2SrO.0.84P ₂ O ₅ .0.16B ₂ O ₃ : Eu; Sr ₂ Si ₃ O ₈ .2SrCl ₂ : Eu; _{Ba 3 MgSi 2 O 8: Eu} 2 +; _{Sr 4 Al 14 O 25: Eu} 2 +; (Ba, Sr, Ca) Al ₂ O ₄ : Eu ²⁺ ; (Y, Gd, Lu, Sc , La) BO 3: Ce 3 +, Tb 3 +; _{(Ba, Sr, Ca) 2} SiO 4: Eu 2 +; (Ba, Sr, Ca) ₂ (Mg, Zn) Si ₂ O ₇ : Eu ²⁺ ; (Sr, Ca, Ba) ( Al, Ga, In) 2 S 4: Eu 2 +; (Y, Gd, Tb, La, Sm, Pr, Lu) _x (Al, Ga, In) _y O ₁₂ : Ce ³⁺ ; (2.82.8x≤3; 4.9≤y≤5.1) (Ca, Sr , Ba) ₈ (Mg, Zn) (SiO ₄ ) ₄ (Cl, F) ₂ : Eu ²⁺ , Mn ²⁺ ; (Gd, Y, Lu, La ) 2 O 3: Eu 3 +, Bi 3 +; (Gd, Y, Lu, La) ₂ O ₂ S: Eu ³⁺ , Bi ³⁺ ; (Gd, Y, Lu, La ) VO 4: Eu 3 +, Bi 3 +; ^{_{SrY 2 S 4: Eu 2 +}} ; ^{_{CaLa 2 S 4: Ce 3 +}} ; (Ca, Sr) S: Eu ²⁺ ; (Ba, Sr, Ca) MgP 2 O 7: Eu 2 +, Mn 2 +; ZnCdS and the like and a mixture of two or more selected therefrom. The main wavelength of light emitted from the photoexcitation material depends on the excitation material described above. Ce ³⁺ emission depending on the garnet composition can emit light from green (~ 540 nm; YAG: Ga, Ce) to red (~ 600 nm; YAG: Gd, Ce) without decreasing the light efficiency. have. In addition, a representative inorganic phosphor for emitting deep red is SrB ₄ O ₇ : Sm ²⁺ . Sm ²⁺ mainly contributes to the red wavelength. In particular, the deep red inorganic phosphor absorbs the entire visible light region of 600 nm or less and emits light having a deep red color, that is, a wavelength of 650 nm or more. A representative inorganic phosphor for emitting green light is SrGa ₂ S ₄ : Eu ²⁺ . Such a green inorganic phosphor absorbs light of 500 nm or less and emits a main wavelength of 535 nm. A representative inorganic phosphor for emitting blue light is BaMg ₂ Al ₁₆ O ₂₇ : Eu ²⁺ . Such a blue inorganic phosphor absorbs light of 430 nm or less and emits a main wavelength of 450 nm.

Organic fluorescent materials may emit blue, green, and red light. For example, (4,4'-bis (2,2-diphenyl-ethen-1-yl) diphenyl (DPVBi), bis (styryl) amine (DSA) system, and the like are typical organic materials emitting blue light. , Tris (8-quinolinato) aluminum (III) (Alq ₃ ), cumin 6, 10- (2-benzothiazolyl) -1,1,7,7-tetramethyl-2,3,6,7 -Tetrahydro-1 H, 5 H, 11 H-[1] benzopyrano [6,7,8-ij] -quinolizine-11-one (C545T) and quinacridone are representative of green light emission. Organic material, 4-dicyanomethylene-2-methyl-6- (zulolidin-4-yl-vinyl) -4H-pyran (DCM2), 4- (dicyanomethylene) -2-methyl-6 -(1,1,7,7-tetramethylzololidyl-9-enyl) -4H-pyran (DCJT), 4- (dicyanomethylene) -2-tert-butylbutyl-6- (1,1,7 , 7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) and the like are representative organic substances that emit red color.

The organic pigments usable in the photoexcited diffusion layer 16 of the present invention include azo pigments such as insoluble azo pigments, azo lake pigments, condensed azo pigments and metal salt azo pigments, and the like. Consists of metal-free phthalocyanine and copper phthalocyanine lake pigments, and dye lake pigments include acidic fuel lakes and basic dye lake pigments. Condensed polycyclic pigments include anthraquinone, thioindigo, perylene, prinon, quinacridone, Dioxazine, isoindolinone, isoindolin, quinaphthalone, and the like, and other pigments include nitroso pigments, alizarin, metal complex salt azomethine, aniline black, alkali blue, and fluorescence fluorescent.

As nano metals and materials such as quantum dots of composite materials, nano-sized metals or nano composite materials are used. As nano metals, platinum, gold, silver, nickel, magnesium, palladium, etc. are used. , Nanocomposites include cadmium sulfide (CdS), cadmium selenide (CdSe), zinc sulfide (ZnS), zinc selenide (ZnSe), indium phosphite (InP), titanium oxide (TiO ₂ ), zinc oxide (ZnO) , Tin oxide (SnO), silicon oxide (SiO ₂ ), magnesium oxide (MgO) and the like.

The diffusing material used in the photoexcited diffusion layer 16 of the present invention is largely divided into a transparent diffuser and a white diffuser. Transparent diffusing agents include organic transparent diffusing agents such as acrylic resins, styrene resins and silicone resins, and inorganic transparent diffusing agents such as synthetic silica, glass beads, and diamonds, and white diffusing agents include silicon oxide (SiO ₂ ) and titanium oxide (TiO _2). ), Inorganic oxides including zinc oxide (ZnO), barium sulfate (BASO ₄ ), calcium carbonate (CaSO ₄ ), magnesium carbonate (MgCO ₃ ), aluminum hydroxide (Al (OH) ₃ ), clay, etc. to be.

The polymer resin, which is the base material of the photoexcitation material and the diffusion material, is epoxy, urethane, acrylic, PET, polyvinyl chloride, polyester, polycarbonate, vinyl, methacrylic ester, Polyamide type, synthetic lava type, polystyrene type, CBS, polymethyl methacrylate, fluororesin type, polyethylene type, polypropylene type, ABS type, Ferra resin type and the like. In addition, as described above, in order to make the film uniformly when manufacturing the film using the photoexcitation material, the diffusion material, the resin, and the like, and to prevent the precipitation of the photoexcitation material, the diffusion material, etc. In order not to occur, it may include an anti-foaming agent, a binder, and the like.

Figure 2 is a block diagram according to an embodiment of the present invention, Figures 3a to 3b is a conceptual diagram showing a manufacturing process according to an embodiment of the present invention, described with reference to the drawings, black on the substrate that can be bent A filter forming step 51 of forming a predetermined pattern with photoresist (BM) and sequentially coating color filter material of RGB;

An encapsulation substrate manufacturing process (5) comprising a step of forming a photoexcited diffusion layer (52) which sequentially enters a photoexcited diffusion material on the upper surface of the color filter using a transparent photoresist; An insulating layer forming step 61 of forming an insulating layer on the silicon wafer substrate on which the thin film transistor is formed, a reflecting plate forming step 62 of forming a reflecting plate using a metal having good reflectance, and forming a transparent electrode on the reflecting plate, Forming an organic light emitting layer on the transparent electrode and forming a transparent electrode on the organic light emitting layer; An organic light emitting device forming process (6) including a protective film forming step (64) of forming a transparent protective film on the transparent electrode;

Combining the sealing substrate and the organic light emitting element to correspond to the corresponding pixels to form a full color display (7);

It was shown that the substrate (silicon wafer) of the combined full color display is composed of a series of polishing processes (8) in which the grinder 82 is thinly processed.

Referring to FIG. 3A, the manufacturing process (5) of the encapsulation substrate is described in more detail by using a black matrix (15; Black Matrix: BM) photoresist on the upper surface of the plastic resin substrate 11 that can be bent. A constant pattern corresponding to the pixel position is formed, and the pattern is exposed to a photoresist having a color filter function of red (12) and green (13), and then arranged uniformly.

3A shows that the light excitation diffusion layer 16 is formed, the light diffusion layer 16 is a transparent photo including an optical excitation material and a diffusion material on the upper surface of the substrate on which the color filters 12 and 13 are formed. The resist is applied uniformly by spin coating, screen printing, or the like, and then prebaked using a hot plate or an oven, and the encapsulation substrate 1 having the prebaked. By using the same photo mask as the color filters 12 and 13, and then exposed to light, and then developed in a developer for a predetermined time.

Referring to the organic light emitting device forming process 6 shown in FIGS. 1 and 3B in more detail, a thin film transistor 27 serving as a switching element is formed in a defined pixel area of a substrate of a silicon wafer 21 and the thin film transistor is formed. Reference numeral 27 is composed of an active layer, a gate electrode, a source electrode, and a drain electrode, and can be produced by a conventionally known technique in which an active layer is formed between the source electrode and the drain electrode. A silicon on insulator (SOI) substrate may also be used as the substrate of the organic light emitting diode. An insulating layer having a contact hole for protecting the thin film transistor 27 and maintaining a connection between the drain electrode and the electrode of the organic light emitting diode is formed on the prepared substrate. At this time, the insulating layer is formed using a material such as Si _x N _y , SiO _x , SiON having a thin thickness and good insulating properties. In addition, by forming the reflector plate 22 in the pixel region defined by using a metal having good reflectivity on the formed insulating layer, it has a front light emitting structure, increases the aperture ratio, increases the light efficiency of the organic light emitting device, and also has a low sheet resistance. By lowering the sheet resistance of the transparent electrode 23 formed on the reflective plate 22 serves to increase the efficiency of the organic light emitting device. In this case, the metal used as the reflector 22 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta). These alloys etc. are mainly used. A transparent electrode 23 made of indium tin oxide (ITO), indium zinc oxide (IZO), or the like is formed on the formed reflection plate 22. In this case, since the reflective plate 22 and the transparent electrode 23 are formed, the organic light emitting diode is optically formed by the transparent electrode 25 formed on the reflective plate 22, the transparent electrode 23, and the organic light emitting layer 24. The resonance mechanism is applied to maximize the light efficiency and to control the emission color. The organic light emitting layer 24 is formed on the formed transparent electrode 23 using a deposition method using an open shadow mask, a deposition method using an ink-jet, or a deposition method using color patterning, and the transparent electrode 25 is formed on the transparent electrode 25. Is formed. In addition, at least two metals selected from metals such as aluminum (Al), silver (Ag), calcium (Ca), magnesium (Mg), etc. in order to minimize damage to the organic light emitting layer that is already formed in the transparent electrode 25. By stacking the transflective metal buffer layer may be inserted. Finally, the protective film 26 is formed on the formed transparent electrode 25 to protect the organic light emitting device and has a moisture barrier function. The protective film 26 may be formed of organic materials such as NPB, Alq ₃ , or SiN, SiON, or the like. Formed using inorganic matter.

When the encapsulation substrate and the organic light emitting device are manufactured by the above process, the full color display in which the encapsulation substrate 1 having the color conversion layer and the active matrix organic light emitting device 2 having the front light emitting structure are combined using the sealant 71. Perform the combining process (7) to produce (10). Referring to FIG. 3B in detail, the manufactured full color display 10 is attached to the temporary substrate 81 to be bent to fix the manufactured full color display 10, and the silicon wafer substrate 21 is fixed. The grinding process 8 performs a thin cutting and polishing process using a grinder 82, wherein the silicon wafer substrate 21 may be manufactured to a thickness of several tens of micrometers. In addition, the silicon wafer substrate 21 is thinned using the above mechanical process, and then the full color display 70 is detached from the temporary substrate 81 to produce a bendable full color display.

4 is a conceptual diagram illustrating a display manufacturing process according to an embodiment of the present invention, wherein the polishing process 8 is a frame in which a full color display or an unpolished full color display 10 is polished by the mechanical method. After mounting on the substrate, the substrate is etched using potassium hydroxide (KOH) or the like to be processed to several tens of nanometers, and the transmittance is 90% or more to form a transparent substrate that can be bent. In addition, as shown in FIG. 4, in the present invention, a flexible plastic resin sheet 91 that may be bent may be attached to the silicon wafer substrate of the manufactured full color display 10 to increase the bending stability and flexibility of the display. have.

As described above, the present invention uses a very thin silicon wafer, which serves as a perfect moisture / oxygen protective film (permeability: <10 ^-7 g / m ² .day) and is easy to clean, has a high glass transition temperature, and has high thermal conductivity. It is effective to provide a high quality flexible display that is manufactured with various curved surfaces and shapes using the characteristics effectively.

In addition, using a thin film transistor has the effect of providing a display of high resolution and low power consumption.

In addition, by inserting a light excitation diffusion layer into a high efficiency organic light emitting device and a color conversion layer to which a small amount of red or green is added, light can be excited to derive RGB through a color filter, thereby having a high color conversion efficiency.

Claims (4)

A full color display having a top emitting structure; A flexible substrate 11 that can be bent and a black mattress 15 that blocks light between adjacent color filters 12, 13, and 14 are formed at the rear of the substrate 11. 12, 13 and 14, an encapsulation substrate 1 on which a light excitation diffusion layer 16 in which a photoexcitation material and a diffusion material are mixed is formed; A very thin and flexible silicon wafer substrate 21, a reflector 22 formed on the substrate, a transparent electrode 23 formed on the reflector 22, and a blue formed on the transparent electrode 23. An organic light emitting layer 24 that emits light having a wavelength or a wavelength in which at least one of a wavelength other than blue is mixed, a transparent electrode 25 formed on the organic light emitting layer 24, and the transparent electrode 25 A flexible full color display comprising: an organic light emitting element (2) composed of a transparent protective film (26) formed on the substrate. The flexible full color display according to claim 1, wherein a thin film transistor (TFT) is formed on the silicon wafer substrate (21). A filter forming step 51 of forming a predetermined pattern with a black photoresist (BM) on a flexible substrate and then sequentially applying a color filter material of RGB, and an optical excitation diffusion layer and a color conversion layer on an upper surface of the color filter. An encapsulation board manufacturing process (5) comprising a step of forming a photoexcited diffusion layer (52) sequentially entering at least one material selected from materials using a transparent photoresist; An insulating layer forming step 61 of forming an insulating layer on the silicon wafer substrate on which the thin film transistor is formed, a reflecting plate forming step 62 of forming a reflecting plate 22 using a metal having good reflectance, and a transparent electrode on the reflecting plate. Forming an organic light emitting layer on the transparent electrode and forming a transparent electrode on the organic light emitting layer; An organic light emitting device forming process (6) including a protective film forming step (64) of forming a transparent protective film on the transparent electrode; Combining the sealing substrate and the organic light emitting element to correspond to the corresponding pixels to form a full color display (7); A method of manufacturing a flexible full color display, characterized in that the substrate (silicon wafer) of the combined full color display is composed of a series of polishing processes (8) for thin processing using a grinder (82). The method according to claim 3, wherein a sheet forming process (9) for adhering a thin plastic sheet to the substrate etched after the polishing process (8) is further formed to increase flexibility and stability of the substrate. Full color display manufacturing process.

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