KR20050102072A - Microfabricated double-throw relay with multimorph actuator and electrostatic latch mechanism - Google Patents

Abstract

This invention is a new type of relay that incorporates the functional combination of multimorph actuator elements with electrostatic state holding mechanisms in the development of a micromachined switching device. This combination of elements provides the benefits of high-force multimorph actuators with those of zero-power electrostatic capacitive latching in microfabricated relays with high reliability and low power consumption. The operation of the relay invention allows for several stable states for the device: a passive state using no power, an active state driving the multimorph actuator with some power, and a latched state electrostatically holding the switch rate requiring essentially no power. Multimorph actuators covered by this invention include piezoelectric, thermal, and buckling multimorph actuation mechanisms. These devices use one or more sets of actuator armatures in cantilever or fixed-beam configurations, and use one or more sets of electrostatic latch electrodes for state holding.

Description

MICROFABRICATED DOUBLE-THROW RELAY WITH MULTIMORPH ACTUATOR AND ELECTROSTATIC LATCH MECHANISM}

An exemplary utility patent application describing the device is 60 / 243,788, filed Oct. 27, 2000, with the same name as the present application. A second application describing related devices is 60 / 243,786, filed October 27, 2000, under "Microfabricated Relays with Multimorph Actuators and Pruning Latch Mechanisms." Each of these preliminary utility patents relates to features of the present invention and is incorporated herein by reference.

There has been a federal guarantee that there is no prior investigation and development preceding the present invention.

The present invention relates to the general field of switching devices, and more particularly to the field of microfabricated relays. Since the original concept of microfabricated switching devices by Petersen in 1979, many attempts have been made to develop switches and relays suitable for low power and high frequency applications. The goal of this work is to improve the cost-effectiveness and performance of switching technology by using moving structures, defined as ultra-compact, batch-fabricated, and photolithographic techniques, as part of mechanical devices.

 Microfabricated electromechanical systms (MEMS) have the advantages of longer life, lower cost, smaller size and higher speed than switching devices manufactured by conventional means, and provide better performance than solid state devices. In many applications, particularly applications of high performance measurement, automated test equipment, radar, and communication systems of any quality are required or desirable. Specific values vary depending on the application and are appropriately valued in the detailed description of the invention.

1) Relay rather than switch function to isolate control signal from load signal

2) Low Ohmic Contact Between Relay Electrodes

3) Low power usage to toggle relay open / closed state

4) Zero or lowest power to maintain a specific relay open / closed state

5) High precision, low manufacturing cost

6) High force mechanical closure of high speed, relay contacts

7) High force mechanical opening of high speed, relay contacts

8) Control signals and operating conditions easily achieved

Many switching device development efforts have been made to achieve some of these benefits, but they are not successful in achieving everything. Prior art switching device designs can be discussed largely in terms of two major device categories: those using electrostatic actuating mechanisms and those using bimorph acutating mechanisms. Each actuating mechanism has inherent qualities and advantages, as well as physical limitations that conventional design designs do not achieve all the desired qualities listed above. These devices and mechanisms are described below, in which most of the prior art microfabricated relay devices are characterized by single-throw actuation. Single-throw actuation refers to the connection and disconnection as one electrical contact when actuated, while double throw actuation refers to the disconnection as one electrical contact and actuation as the other electrical contact when actuated. Point.

Electrostatically actuated devices utilize two (or more) bias electrodes with voltage applied across them. Opposite charges are generated on the surface of the opposing electrode, and electrostatic power is generated. If the bias electrodes are allowed to deflect towards each other, actuation is possible. In an electrostatically actuated device, the switch or relay contact electrode will be mechanically coupled to this moving bias electrode so that the contact electrodes will join or disconnect as voltage is applied or not applied.

Electrostatic actuation essentially supports many of the described operating qualities and, after all, is the most widely investigated MEMS actuation mechanism for switching and relays. Electrostatic actuation enables ohmic-contact relays and switching, although low resistance is difficult to achieve. They effectively require zero power to toggle states and effectively require zero power to maintain states. Designers can use microfabrication techniques to develop precision, low cost electrostatic actuators. These actuators can provide high speeds, but high closure forces are difficult to achieve and are not easy to develop high opening forces. These actuators are difficult to design with low drive voltages (less than 10V) typical for current integrated circuits, although drive current is typically negligible (less than 1 mA).

According to the literature there are many examples of electrostatic MEMS switches and relays illustrating low power actuation with very low power capacities. US Pat. No. 6,046,659 to Loo et al. Describes a typical example of a single-throw double-contact cantilever MEMS relay using an insulator-metal-insulator stack for stress compensation. Other cantilever MEMS devices use different contact metals for improved performance, such as relays according to US Pat. No. 5,578,976 by Yao et al. And switches according to US Pat. No. 5,258,591 by Buck. U.S. Patent No. 5,479,042 to James et al. Has a double contact relay integrated with bumps to improve manufacturing. US Pat. No. 5,638,946 to Zavracky adds a novel device for actuation using individual fixed electrodes for biasing after initial operation in solid metal switches. This document includes switching devices by Milanovi et al. Where devices are moved from one substrate to another to improve high frequency signal switching.

Some notable attempts have been made to improve performance at higher signal loads by increasing device size and performance at the expense of size, speed, and reliability. A typical example is US Pat. No. 6,054,659 to Lee, in which copper devices are larger than previous efforts and have a stronger order of magnitude. Komura et al. Also developed a millimeter-sized two-contact electrostatic MEMS relay for medium signal loads. The device according to US Pat. No. 6,057,520 by Goodwin-Johansson reduces arcing under hot-switch conditions by varying the contact resistance of the electrodes as the device opens and closes.

Several electrostatic MEMS switching devices have been designed to meet low drive voltage conditions at the expense of device size, contact force, and often manufacturing disadvantages. Shen and Pacheco reduce voltage conditions by increasing bias electrode size and armature flexibility. U.S. Patent No. 5,544,001 to Ichiya et al. Integrates the use of a novel stepped and sloped substrate bias electrode to reduce drive voltage.

Some electrostatic MEMS devices are designed to have a set of bias electrodes to open the device with increased speed and force, as compared to the manual restoring force of the deflection spring typically found in MEMS devices. Hah et al. Combine a torsional spring restoring force with an opposing bias electrode to drive a relay opening as a typical example. U. S. Patent No. 5,278, 368 to Kasano et al. Describes a dual-contact MEMS relay with a drive-opening electrode as well as a novel built-in electret to reduce the overall voltage condition.

Unlike electrostatic actuators, bimorph actuators convert control signals into mechanical deformations within the actuator itself. Bimorph (or more specifically multimorph) actuators consist of layers that show different physical responses to a particular stimulus. For example, the thermal bimorph may have a first layer having a high coefficient of thermal expansion (10 ppm / ° C or more) and a second layer having a low coefficient of thermal expansion (5 ppm / ° C or less). When such bimorphs are exposed to increasing temperatures, the relative expansion of the first layer is confined to the second layer by adjacent contact, and the actuator is twisted in response. The device uses this torsion to perform work, and the force generated by the bimorph can be much larger than what can be obtained by the electrostatic actuator.

Bimorph actuators also inherently support many of the operating qualities described above, which in turn is a widely investigated second MEMS actuation mechanism for switches and relays. They can be used in ohmic contact devices and the contact resistance is lowered by the large forces generated by the bimorph actuators. They can be designed to toggle the state at low power, although only some kind of bimorph allows low power state latching. The bimorph actuator can be made to provide high speed and high closure force, and can be designed to provide similarly high opening force and speed. Some bimorph actuators can be designed to be driven with low drive voltages and low drive currents.

Most switching devices with bimorph actuation mechanisms select piezoelectric bimorph actuators to keep power consumption low, and such devices typically exhibit many of the desirable qualities listed previously. However, very few MEMS efforts use piezoelectric bimorph actuators due to manufacturing difficulties associated with piezoelectric materials. Incidentally, the actuation of the piezoelectric bimorph typically requires complex high voltage waveforms to prevent hysteresis and degradation. U. S. Patent No. 4,620, 123 to Farrall describes a switching device featuring an array of metal-piezo-metal three-layer actuators. US Pat. No. 4,819,126 to Kornrumpf developed a series of piezoelectric bimorph actuators that extend in the central anchor region to handle varying signal loads. U.S. Patent No. 4,916,349 by Kornrumpf also designed a piezoelectric relay that enables controllable zero-power manual latching by varying the residual polarization in the piezoelectric bimorph itself to latch the state. U.S. Patent No. 4,403,166 to Tanaka has developed a device composed of opposing cantilever piezoelectric bimorphs that generates closing force and travel. All these devices have been manufactured by conventional means and feature all or many traditional piezoelectric material limitations.

Most bimorph actuators manufactured utilize thermal bimorphs because of their ease of manufacture and drive signal generation. Such devices typically require continued application of power to remain active and often have speed limitations based on heat transport phenomena. U.S. Patent 5,467,068 to Field et al. Discloses a general purpose thermal bimorph relay in which the stack substrates have a number of novel contact structures. U. S. Patent No. 5,463, 233 to Norling et al. Has a thermosensitive relay having a plurality of contact electrodes and an electrostatic bias electrode for temperature sensing, which devices are now well suited for thermistors. US Pat. No. 5,796,152 to Carr et al. Developed a relay with a set of engineered opposing bimorphs that allows manual mechanical latching at the expense of size, speed and power usage.

MEMS relays according to US Pat. Nos. 5,666,258 by Gevatter et al. And US Pat. Nos. 5,629,565 and 5,673,785 by Schlaak et al. It features. The advantage of this device is that instead of the complexity, the increase in closing force and the reduction in drive voltage require simultaneous drive of both actuators for proper relay function.

Despite the long demands and active and extensive efforts by numerous researchers and groups, including the above, none of the resulting devices utilize all of the desirable attributes for high performance signal switching for radar and communication systems. I can't.

The accompanying drawings show cross-sectional views other than FIGS. 1, 6 and 11. Functional cross section parallel lines, simple black borders, and numerical values for all components. All components shown with white or thick cross-sectional hatching represent electrically insulating materials. Components shown in a thin closed space cross-sectional parallel line pattern represent a material that is an electrical conductor. Cross-sectional parallel line patterns for all components are shown in plan views of FIGS. 1, 6 and 11 for clarity and continuity. Semiconductor materials may be used in alternative embodiments to fabricate the insulators and / or conductors described depending on the level of doping of the semiconductor.

1 shows a plan view according to an embodiment of the present invention having a diagram provided for section line and clarity, and with many components that can be embedded below the top surface shown in dashed lines. 1 is a plan view with the cover removed to show the actuator components of a representative embodiment. The two cross-sectional views shown in conjunction with FIGS. 1, 2A, and 3A show the load armature and actuator armature, respectively. 4 shows a cross section of an armature in the region of a multimorph actuator, showing the relationship between electrical connections. 5A, 5B, and 5C are cross-sectional views of relay regions with latching and contact mechanisms in relay state of open (FIG. 5A), closed down (5B), and closed up (FIG. 5C). The bending configuration of the contact armature is shown in FIGS. 5B and 5C showing the relay in a fully hatched state.

2A, 2B, 2C, 2D and 2E show cross-sectional views of a load armature in five operating states of the device. 2A is a load armature in which the relay is passive. 2B shows the torsion induced in the load armature when the relay is driven to an active down state. 2C shows the torsion induced in the relay load armature when in the latched down state. 2D shows the load armature when the relay is driven to an active up state. 2E shows the torsion induced in the relay load armature when in the latched up state.

3A, 3B, 3C, 3D and 3E show cross-sectional views of piezoelectric multimorph actuator armatures in the same five operating states of the device. 3A is an actuator armature when the relay is in a passive state. 3B shows the torsion induced in the actuator armature when the relay is driven in an active down state. The armature electrode contact is shown in FIG. 3C, which shows the possible twist induced in the actuator armature when the relay is in the latched down state. 3D shows the twist induced in the actuator armature for which the relay is to be driven to an active up state. 3E again shows the armature electrode contact, which shows the possible twist induced in the actuator armature when the relay is in the latched up state.

6 to 10 show alternative embodiments. 6 is a functional plan view showing an embodiment using a thermal multimorph as the main actuator. The two cross sections shown in conjunction with FIGS. 6, 7A, and 7B show cross-sectional views of the lot armature and thermal multimorph actuator armature, respectively. 9 shows a cross section of an armature in the region of a multimorph actuator. Similar to FIGS. 5A, 5B, and 5C for the previous embodiment, FIGS. 10A, 10B, and 10C show cross-sectional views of relay regions with latching and contact mechanisms in open, closed down, and closed up relay states, respectively.

7A, 7B, 7C, 7D and 7E show cross-sectional views of the load armature in the same five operating states of the device. 7A is a load armature when the relay is in a passive state. 7B shows the torsion induced in the load armature when the relay is driven to an active down state. 7C shows the relay torsion induced in the load armature when the relay is in the latched down state. FIG. 7D shows the torsion induced in the load armature in which the relay will be driven to an active up state. 7E shows the torsion induced in the load armature when the relay is in the latched up state.

8A, 8B, 8C, 8D and 8E show cross-sectional views of a thermal multimorph actuator armature in the same five operating states of the device. 8A is an actuator armature when the relay is in a passive state. 8B shows the actuator armature when the relay is driven in an active down state. The armature electrode contact can be seen in Figure 8C which shows the twist induced in the actuator armature when the relay is in the latched down state. 8D shows the actuator armature when the relay is driven to an active up relay state. The armature electrode contact can be seen in Figure 8E, which shows the twist induced in the actuator armature when the relay is in a latch up relay state.

In the third embodiment of the present invention, the relay may include a plurality of actuator armature structures, as shown in FIG. This relay is shown with the actuator armature perpendicular to the load armature. Such a shape having a different number of actuator armatures or load armatures can be sufficiently determined by the decision of one skilled in the art. 12 shows a cross-sectional schematic diagram of the load armature of this embodiment.

13A, 13B and 13C are cross-sectional schematic diagrams of the actuator armature of the relay in which three of the five of the third embodiment are in operation. Each figure depicts the contact armature region surrounding the contact electrode as well as the thermal actuator armature in response to the device closing operation and the device opening operation. 13A depicts the actuator armature when the relay is inactive. 13B shows the flexure induced in the actuator when the relay is driven in an inactive down state. 13C shows the actuator armature when in the latched down state. The illustration of the actuator armature in the activated up and latched up states is not provided for the sake of brevity.

Accordingly, the present invention provides a first apparatus that achieves each quality with little or no disadvantages and limitations in a double-throw switch configuration.

In the field of micromachined switching and relays, there are many devices that integrate multimorph or electrostatic actuator elements. Multimorph actuators are mainly used to generate large forces for a given drive power supply, voltage or current because of their ability. Electrostatic actuators are used to use very low power to activate and maintain a switch or relay in an open or closed position because of their ability. There was a need in the industry to develop devices that use low power and integrate a large force for reliable contact, but none of the previous efforts have been successful. The first object of the present invention is to achieve this object, which is achieved by integrating high-force multimorph actuation with a zero-power electrostatic latching mechanism.

The operation of the present invention enables different stable states for the device. The first state is the passive state, which is the natural state of the relay when no control signal is applied to the device. When an active state is required, drive control signals are applied to the relay actuator (s), where the mechanical limitations of the device prevent further deflection of the relay armature. Once changed, it may be an infinite period of time in a latched state, which maintains the state, so that a latch control signal is applied to the electrostatic element to maintain or couple them with electrostatic power. At this point, the drive control signal can be removed from the actuator and the relay will latch as is. Elimination of the latch control signal may send the relay back to the passive state. The double-throw configuration allows a second active state in which a second electrical contact is made with the relay in the second closed position. The associated second latch state is also integrated to provide a low power latching capability for the second closed state.

Term Definition

Brief descriptions of terms and units are provided for readers who are not familiar with micro devices. The drawings and detailed description of the invention include the exact terminology for describing the elements to which reference is made in the drawings in the order in which they appear in the sentences. Each term is considered a description according to the commonly accepted relay industry terminology:

Milli-, m is the standard S.I. prefix for 1/1000.

Micro-, μ is the standard S.I.prefix for 1 / 1,000,000.

Nano-, n is the standard S.I. prefix for 1 / 1,000,000,000.

Newton N is the standard S.I. of force equivalent to one kilogram meter per two square meters. Unit.

Microns, μm or micrometers are units of length equivalent to 1 / 1,000 of a millimeter.

Microfabrication is defined as a manufacturing method that defines components described by the lithographic technique popular by the integrated circuit developer industry.

Micromachining is the operation of describing photolithographically defined microdevices, often performed by etching processes using acids or groups.

Actuation is defined as the act of opening or closing a relay or other switching device.

Actuators are defined as energy conversion mechanisms responsible for actuation.

An armature is defined as any element that is deflected or moved by an actuator to open or close a relay or other switching device.

Multimorph is defined as an actuator consisting of a combination of layers whose size changes when exposed to a stimulus. (Where the change in size varies for two or more different layers)

Bimorphs are defined as multimorphs with exactly two layers.

A multimorph layer is defined as any layer of multimorphs in which a particular layer may or may not respond to drive stimuli defined for motion sickness.

Piezoelectric miltimorphs are defined as multimorph actuators in which one or more layers respond to voltage stimuli with nonzero piezoelectric coefficients.

Thermal multimorph is defined as a multimorph actuator in which one or more layers respond to a heat or cold stimulus having a non-zero coefficient of thermal expansion.

Buckling multimorphs are defined as multimorph actuators in which one or more layers respond to a nonzero stressed deflection stimulus to a level in accordance with the buckling phenomenon.

Fixed base is defined as a solid integral relay region that provides mechanical support.

A base substrate is defined as a micro substrate that forms part of a fixed base.

A load signal is defined as a signal to be switched by a relay or other switching device.

The load signal line is defined as a port (input or output) for the load signal to be switched.

An armature contact element is defined as an element located in an armature that is physically engaged or separated from another contact member to form and / or separate a conductive path for a load signal from an input to an output load signal line. .

A contact armature is defined as an armature with an armature contact member attached.

Base substrate contact members are defined as elements located on the base substrate that are physically engaged and / or separated from other contact members to form and / or separate conductive paths for load signals from input to output load signal lines.

A drive signal is defined as a signal that initiates actuation of a relay or switch.

The drive signal line is defined as a line for orienting the drive signal. For the electrical drive signal, at least two drive signal lines are required, such as one for the reference.

A latch signal is defined as a signal that holds a relay or switch in an open or closed state.

The latch signal line is defined as a line for orienting the latch signal. For the electrical drive signal, at least two latch signal lines are required, such as one for the reference.

An armature electrode is defined as a conductive region attached to an armature with a latch signal or reference thereof.

The base substrate electrode is defined as a conductive region attached to the base substrate on which the latch signal or its reference is oriented.

Latch electrode insulators are defined as insulating regions that prevent electrical contact from occurring between the armature electrode and the base substrate electrode.

The present invention encompasses a small switching speed and signal load as a whole compared to the relay industry standard. For example, with respect to load signal strength for conventional relays, ㎂ and ㎃ are not functionally distinct, but the performance and design differences of the microfabricated relays for these different load signals are important. For this patent, the following speeds and signal loads are defined. Note that these specifications are different from those defined in the relay industry standard:

Ultrafast switching time is defined as less than 100 nsec.

The fast switching time is defined as 100 nsec to 1 μsec.

The intermediate switching time is defined as 1 μsec to 100 μsec.

The low speed switching time is defined as 100 μsec to 10 msec.

The lowest low speed switching time is defined as more than 10msec.

The lowest signal load is defined as less than 10 mA DC current to 100 mA RF power supply.

The lower limit signal load is defined as 10 Hz to 10 Hz or 100 Hz to 100 mW.

The intermediate signal load is defined as 10 mW to 500 mW or 100 mW to 5 W.

The upper limit signal load is defined as 500 Hz to 5A or 5W to 50W.

The peak signal load is defined as 5A DC current to 50W RF power.

The present invention is a new type of relay incorporating functional coupling of a polymorphic actuator component with an electrostatic state maintenance mechanism by the development of a microfabricated double-throw switching device. This combination of components offers the advantages of a high power polymorphic driver with those of zero-power capacitive latching in microfabricated relays with high reliability and low power consumption. The following detailed description first examines this functional combination of driver technology and continues the detailed review of several specific device embodiments of the present invention.

Relays are switching devices that have the additional feature of including a control signal path isolated from the load signal path. Such devices allow switching of deformed or sensitive signals (such as data streams or test equipment signals) without interference from control signals that may have fluctuations or irregular performance in the integrity of the sensitive load signal. This also allows a high voltage or high power load signal to overload control electronics if the load signal is allowed to interact with the control signal path; To protect control electronics in applications that may be dangerous in any form; High frequency devices often require high isolation of the control electronics from the signal load as the high frequency power cannot be completely included due to a completely electrostatic or inductive coupling. Most single-throw relays include two stable operating states that define whether the load signal circuit is 1) open or 2) closed. Such devices form expensive components for a wide range of applications in direct current, low frequency, and high frequency applications, and many efforts have been made in the industry of interest to fabricate microfabricated relays.

The polymorphic drive mechanism has a relatively large force at high speeds (driving times from μsec to msec) over intermediate intervals (arm deflections from tens of micrometers to mm) with intermediate power requirements (10 μW to tens of mW of continuous operation). The ability to generate contact force from mN to N has been a decisive factor for decades. Polymorphic driver technology is applied to the present invention which generates intermediate contact forces to reliably establish and release electrical load signal contacts. However, polymorphic driver technology can have several significant disadvantages discussed in the background. Some techniques require some power to maintain, for example, if the driver drive signal or relay state is maintained for extended rest periods (several seconds to years) while others appear to be vulnerable, unreliable, or broken.

To avoid these undesired attributes, the present invention combines a polymorphic driver and a second mechanism to provide a non-destructive replacement, low power for maintaining relay status. Electrostatic drive has long been a key technology in the microfabricated driver industry, which demands lower power consumption (from nW to μW) and upper closure time (from 100 nsec to 100 μsec). The typical forces in these devices (from 1 μN to 0.5 mN) and the actuator travel intervals (from 1 to 10 μm) are very limited, and most electrostatic relay forces are related to relay insertion loss, reliability (both related to contact force). ), Isolation, and isolation voltage (both related to gap separation).

The present invention is superior to conventional microfabricated relays since the two drive technologies are combined using their respective advantages. In the present invention, the electrostatic driver is used to keep the device in each closed state with a number of tasks required to achieve a state executed by a comparably powerful polymorphic driver. In this combination, the advantages of each driver are realized with the disadvantages eliminated.

The present invention relates to a microfabricated relay having a total planar dimension of total width and length between 10 μm and 10 mm. The planar dimension adopted for a particular design depends primarily on the required speed of the defined area and the power level of the signal load being switched. Devices that require fast or ultrafast switching are designed to be the lowest of a given size range, while devices that handle upper or highest signal loads have sizes close to the maximum of the required area.

It is presumed that the device according to the invention and intended for use in the low to medium signal loads and the medium to high switching speeds can have planar dimensions between 75 μm and 1.5 mm. Such dimensions may be suitable for mid-band wireless communicators, transmit phased-array antenna electronics, or general telecommunication switching applications. It is expected in applications where high or high signal load switching is required and in applications such as general purpose industrial relays or high power high frequency systems where the lowest speed is suitable, and the total dimensions of the device according to the invention are between 0.5 and 10 mm. Can be. It is further presumed that the application of light or ultralight signal loads requiring high speeds, such as short band radios, antenna receiving electronics or any automated test equipment, may require devices with planar dimensions between 10 and 150 μm in accordance with the present invention. . Each of these areas of total planar relay length and width can be reasonably considered to be expected for applications of the present invention. It is further appreciated that an application requiring the opposite of the highest switching speed and the highest signal load in the device may require that the device be designed with planar dimensions anywhere in the area presented.

Throughout the description herein, the materials and dimensions of the components are presented in an application that defines a particular signal load or switching speed. It may be considered that investigating one embodiment of material and shape selection in one application envisioned in the present invention is teaching. Considering an application with a lower signal load allowing for an intermediate switching speed, one embodiment represents one possible design within the application of the present invention, along with the present invention shown in FIGS.

1 is a functional plan schematic diagram of one general class of embodiments of the invention. Here, one cantilever load armature and one cantilever latch armature are fixed at their normal ends and are free to deflect at opposite ends, which are coupled together mechanically by means of the contact armature. 1 depicts components such as electrodes and electrical connections that may be inherent in the device, but is not a true plan schematic. If the top cover plate was removed, all fasteners would be made of transparent material, the conductor would block the line of sight through the device, and the line of sight provided in FIG. 1 would be correct. The components are shown in the plane as reticular lines, and the sub-surface components are shown as point outlines rather than outdoor outlines.

2 are two cross-sectional views shown, respectively, of FIGS. 2A and 3A showing a load armature and a latch armature, respectively. 4 is a cross-sectional schematic view of the armature in the general area of the polymorphic actuator for illustrating electrical connections and insulators. 5A, 5B and 5C show cross-sections of regions with latch and contact mechanisms in open, closed drop and closed lift relay states, respectively. The bending of the contact armature is shown in Figs. 5b and 5c showing the relay in its fully closed and latched state.

One aspect of the present invention of the relay is the functionality of the armature and whether each is suitable for the transmission of load signals and / or control signals. Investigating the cross-sectional view as well as the top view to instruct the function and placement of each component as described above may be teaching. The fixed base 101 is a hard and essential area that can be composed of a number of semiconductor, metal or dielectric components fixed together to provide mechanical strength. The total dimensions of the fixed base may help to define the maximum of the attached relay and its load signal handleable output. The fixed base may be composed of a base substrate 102, which may be composed of one or more microassembleable dielectric or semiconductor materials such as glass, polyimide, or other polymers, alumina, quartz, gallium arsenide or silicon. The cover substrate 134 further includes. Preferred base substrates in this embodiment are at least 250 μm thick and at least one top of each plane dimension, providing a rigid base of microassembly quality material large enough to allow for ease of automated manufacturing, packaging, and system insertion. It is quartz polished to mm.

Attached to this fixed base is a first load signal line 103, a second load signal line 104, a third load signal line 135 representing an electrical path of the input and output of the signal switched by the device, and Fourth load signal line 136. Also attached to the fixed base are a first drive signal line 105 and a second drive signal line 106, and are given a lead across the drive signal for actuating the device. In many devices according to the invention, it is envisioned that the drive signal line is an electrical path. The first latch signal line 107, the second latch signal line 108 and the third latch signal line 141 are additionally attached to the fixed base, and the lead wires crossing the latch base are caught in the closed state. Is given. Since the latching mechanism employed in the present invention is the electrostatic attraction of the electrostatic electrode, the latch signal line is an electrical path.

In the embodiment shown in Figs. 1 to 5, the load signal lines are made of 4 μm thick sheet metal alloy for the lower relay electrical resistance with nickel deposition and 0.4 μm thick sheet metal layer. This metallization is thick enough to allow a low loss line for low to medium load signals and has a low enough resistivity, and nickel provides a sheet metal layer as long as it does not significantly interfere with the electrical performance of gold. The control signal line and latch signal line of this embodiment can be made of 0.4 mu m nickel material without sheet metal gold. Since no load power is transmitted in the control and latch signal lines, low resistivity of gold may not be required, and less manufacturing costs can be realized by omitting it. Gold may be important for device encapsulation processes, such as wire attachment or flip-chip attachment, in which case gold sheet metal may be used.

In the application of the present invention, a group of materials that can be used for all electrical paths, lines or electrode components is a conductive material, also called a group of conductors. The conductors used to make the relay component according to the invention can be selected from materials having a resistivity of less than or equal to 0.2 millimeters, which is defined as equivalent in a heavily doped semiconductor. In some devices according to the present invention, materials that can be used include metals such as gold, copper, silver, platinum, nickel or aluminum. In other devices according to the present invention, materials that can be used include doped semiconductor materials such as silicon, gallium arsenide, silicon germanium and indium phosphide. It can also be expected that all alloys or combinations of semiconductors or metals with a total lower specific resistance can be employed.

It should be taken into account that the material thickness for the electrical path in the device according to the invention can be in the range from 0.1 to 100 μm, depending on the application and possible manufacturing techniques. It is further to be considered that the thickness of one electrical path or line in one device according to the invention may differ substantially from the thickness of the second electrical path or line in the device since the electrical and manufacturing requirements are different. It is generally recognized by those skilled in the art that the electrical resistance of all paths is related to their specific resistance, thickness, width and electrical field. As a result, power savings can be achieved in a form that reduces material selection and path resistance, especially for high and ultra high power signal loads. The use of materials having high resistivity and small width and thickness can result in Joule's Heating of the relay components and can increase signal loss in the device.

The required material thickness and application correlation can be made by estimating the provided area as an electrical path assembled from a predefined conductive material. It is contemplated that the material thickness of the path may be between 0.1 and 3 μm for the device according to the invention and may be intended for use of lower limit signal loads and upper limit switching times. This path will be lighter, thinner, higher resistance compared to thicker paths of the same width and material, and can be effectively considered in the application of switching lower or lower load signal power. In the application of intermediate signal loads and switching times, it can be considered that the material thickness of the electrical path can be between 0.5 and 15 μm depending on the resistivity and width of the path. In applications that require an upper load signal switching, it can be considered that the material thickness of the path can be between 4 and 100 μm. This path will be of greater mass and lower resistivity compared to thinner paths of the same width and material.

In some arrangements according to the invention, the physical shape, material properties and electrical properties of the armature have to be taken into account. In the embodiment shown in Figures 1-5, latch armature 109 is suspended from the area of the fixed base of Figures 1 and 3A. The actuator armature is in the shape of a cantilever with one area fixed 110 and one area free from deflection. In some devices according to the present invention, the armature can be envisioned to consist of one or more layers of microassembleable materials such as silicon, silicon dioxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymers or metals. . The actuator armature of the above-described embodiment includes an 8 μm thick layer of silicon dioxide, selected for easy microassembly by chemical vapor deposition or spin-on glass technology, and provides robust armature insulation.

It should be appreciated that the vertical stiffness of the cantilever beam is approximately linear to the beam width, cubic with respect to thickness, and inverse cubic with respect to length. As a result, the thickness and length are more important in design than the width of the beam that is supposed to deflect perpendicularly and perpendicularly to the substrate. It should be considered that the total thickness of such armatures may range from 0.2 μm to 1 mm, depending on the application, the length and the fabrication technique used in manufacturing. It is reasonable to assume that the armature in the device according to the invention can have a length between 5 μm and 5 mm. The actuator armature of this embodiment is 40 μm wide and 180 μm long, providing a width sufficient to reduce the line resistance and a length sufficient for the flexibility of the armature.

In the arrangement according to the invention designed for the lowest signal load application at the lowest to the highest switching speed at the highest limit, it should be taken into account that the armature can be between 0.2 and 4 μm thick and between 5 and 50 μm in length. For devices designed for medium signal load applications at the upper and lower limits of the intermediate switching speed, it should be taken into account that the armature can be between 1 and 40 μm thick and between 25 and 500 μm in length. For applications requiring an upper signal load in the middle of the lower to medium switching speed, it should be considered that the armature thickness can be between 10 and 400 μm thick and between 100 μm and 2 mm in length. In a device designed for the lowest to lowest switching speed and the highest to the highest signal load, it is to be considered that the armature can be between 200 μm and 1 mm thick and between 1 and 5 mm long.

The above-described armature size region applies not only to the armature and other components on the cuboid rectangle, but also to the armature or other components that change one or more dimensions in a linear or nonlinear function. An example of such an armature may be a load armature tapered from one width to less width at the free end, which can reduce input reflection and provide higher performance than square load signal armatures, which is of interest for high frequency applications. It should be recognized that there may be.

3A is a side schematic view of a polymorph actuator and an electrostatic latch armature in an inactive state. A polymorph is a component composed of two or more layers of material with different properties, and the illustrated bimorph is a polymorph with exactly these two layers. The material layer of the polymorphic actuator varies with different amounts when exposed to the stimulus. In the case of piezoelectric or thermal polymorphic actuators, the stimulus will be applied with voltage or heat respectively. In the case of a buckling actuator, the magnetic pole may be a mechanical deformation in the direction of the buckling sensitivity, which is augmented by securing unstable physical action of the buckling component. In each case, the layers are firmly connected along one or more sides such that the different expansion of the material causes the polymorph to bend in the direction from the layer or layers with the largest expansion.

The multimorph actuator shown in FIGS. 1-3A includes two materials 113, 114. Each of the two materials forming a polymorph varies in different amounts by a given stimulus. In this embodiment, the polymorph is a piezoelectric bimorph and each of the materials has a different piezoelectric coefficient. In this embodiment, the material 113 may have a higher piezoelectric constant compared to the component 114 which is piezoelectrically neutral among the two materials. The piezoelectric actuator of this embodiment is formed of a 12 μm thick lead zirconate titanate (PZT) ceramic layer on a 6 μm thick silicon dioxide layer, which is easily accessible. The voltage is sufficient to effectively activate the actuator armature.

The piezoelectric multimorph actuators used in the apparatus according to the present embodiment include barium titanite (BaTiO ₃ ), barium titanate (BaTiO), lead niobate (PbNbO ₃ ), lead zirconate (PbZrO ₃ ), and lead zircon. One of a ceramic such as nate titanate ("PZT"; PbZr _x Ti _y O ₃ ), or a pressure such as quartz (SiO ₂ ), lithium sulfite (Li ₂ SO ₄ ), lithium niobate (LiNbO ₃ ), Piezoelectric active materials made of one of the typical-active single crystals, or zinc oxide (ZnO).

The piezoelectric multimorph actuators used in the device according to the invention comprise one or more polymorph layers made of insulating material such as silicon dioxide (SiO ₂ ), quartz, silicon nitride (SixNy), or undoped silicon. Can be. For example, in this embodiment, the previously disclosed silicon dioxide armature is used as the component 114.

In contrast, the piezoelectric multimorph actuators used in the device according to the invention can utilize piezoelectric-active materials with different sensitivity to other polymorphic layers. In another device according to the present invention, one or both parts 113 and 114 may be made of a multilayer material having a piezoelectric coefficient of zero or nonzero.

The material thicknesses of the components 113 and 114 may range from 0.5 μm to 1 μm depending on the application, the material, other actuator dimensions, and the assembly technique used in fabrication. In the device according to the invention suitable for applications requiring low to low signal loads and high to high switching speeds, the components 113 and 114 can range from 0.5 to 6 μm in thickness. In applications that typically require multimorph actuator thickness and related characteristics, the components 113 and 114 may range from 4 to 80 μm in thickness. In another embodiment according to the invention, which requires a high force for the highest and highest signal load at the upper limit and allows the lowest switching speed at the lower limit, the component 113 and the thickness range between 50 μm and 1 mm and An actuator with 114 may be needed.

In the apparatus according to the invention using a piezoelectric multimorph actuator, the drive signal required for operation will be the voltage difference across the thickness or width of the piezoelectric material. 1A to 3A show one possible configuration for the drive signal line of the piezoelectric release. In the illustrated embodiment, the drive signal line (s) are assembled on a fixed base region protruding on the flat surface of the base substrate. In another device according to the invention the drive signal lines can be assembled directly on the electrically insulated region of the base substrate. 3A shows drive signal connections 170 and 171 for the top and bottom of piezoelectric material 113, respectively. The driving signal connectors 170 and 171 are attached to the second driving signal line 106 and the first driving signal line 105, respectively. It is clearly shown in FIG. 1 that the upper first drive signal connection 170 extends into a piezoelectric release material in the second drive signal path. A lower second drive signal connection 171 from the first drive signal path appears under the piezoelectric material.

An armature latch down electrode attached to the free end of the actuator armature, substantially facing the base substrate, is connected to the first latch signal line by the first conductive latch signal path 116. Is electrically attached to the A base latch down electrode 117 is attached to the base substrate under the armature latch down electrode, which is connected to the second latch signal line 118 by a condutive second latch signal path 118. 108) electrically attached. Similarly, an armature latch up electrode 142 attached to the free end of the actuator armature and nominally facing the cover substrate is passed by the first conductive latch signal path 143 via the armature latch down electrode to the first latch signal line. Is electrically attached to the The cover latch up electrode 144, which is attached to the cover substrate on the armature latch up electrode, is electrically attached to the third latch signal line 141 by the second conductive latch signal path 145.

Since the latch down and latch up signals are voltage differences, all conductive paths to the armature latch down electrode, base latch down electrode, armature latch up electrode, cover latch up electrode, and the first, second and third signal lines are connected to the electrical path. to be. According to another electric path, it can be seen that the conductors can be used to assemble the armature electrode and the base substrate electrode. Likewise, the material thickness for the armature electrode and the base substrate electrode of the device according to the invention can be in the range between 0.1 and 100 μm, depending on the application and the material as described above. The planar area of each latch electrode is required to be 25 µm ² to 25 mm ² . In another embodiment according to the present invention, the planar area of each armature electrode will be at least half of the planar size of the multimorph actuator with actuator actuators disposed thereon. In other arrangements according to the invention the area shape of the electrodes may be square, rectangular, circular or any combination of geometric designs.

In a device having a very small overall size with the lowest signal load using the fastest switching speed, the planar area of each of the armature latch electrode, cover latch up electrode, and base latch down electrode may be 25 to 500 μm ² . . In a device having a small overall size in such a state as processing a low signal load using a fast switching speed, the planar area of each of the latch electrodes may be 300 to 50,000 μm ² . In addition, in another apparatus according to the present invention having a normal size, the planar area of each of the latch electrodes may range from 30,000 μm ² to 2 mm ² . If a particular device requires a large area for generating an electrostatic latching signal that is approximately equal to 1 mN or more, the area of each latch electrode may range from 1 to 25 mm ² .

Low resistance transmission lines, such as the gold load signal line of this embodiment, are generally not needed for capacitive electrodes. No distinct DC current is required to develop or disperse the voltage across the capacitive electrode. By eliminating metal thicknesses that are not needed, the overall size and weight of the relay can be reduced to improve switching speed. In this embodiment, each latch electrode has a rectangular area of 10,000 mu m ² , and these electrodes as well as the latch and control signal lines are made of nickel 0.4 mu m thick. This nickel is easy to manufacture and is suitable for use as a plating plane for gold load signal lines.

In an embodiment according to the present invention, the latch down electrode insulator 119 and the latch up electrode insulator 146 are used to prevent electrical contact caused between the latch electrodes when the armature is deflected into the latch down or latch up state, respectively. Can be used. Since the latch signal is a voltage difference, such electrical contact can cause a shorting and potentially distructive event of the signal. The latch electrode insulator is made of an insulating material, which is defined as a material having a resistivity of 10 ohm-cm or more. The electrode insulator of this embodiment consists of a 0.1 μm thick silicon nitride layer because of the availability of high-quality thin film silicon nitride.

In the device according to the invention, the insulating material which can be used as the latch electrode insulator can comprise an insulating microassembly material such as undoped silicon, silicon nitride, silicon dioxide, quartz, or polyimide or other insulating polymer. . The material used for the latch electrode insulators will range from 0.05 to 2 μm in thickness and will be thinner than other materials used in the device according to the present invention. In any device having a size that is usually less than the actuator size, the material thickness of the latch electrode insulator can range from 0.05 to 0.4 μm. This range would be required in applications where a thin layer of insulating material could be used, which is of sufficient quality to prevent electrical break down due to field strength. Usually in any device having a size larger than the actuator size, a thin layer of high-quality insulating material may not be available, and the thickness of the latch electrode insulator may be between 0.3 and 2 μm.

In an embodiment of the invention, the latch down electrode insulator is planned to be affixed to the top surface of the base latch down electrode, and the latch up electrode insulator is planned to be attached to the bottom surface of the cover latch up electrode. In another embodiment according to the present invention, the latch down electrode insulator may be attached to the lowermost surface of the armature latch down electrode, and the latch up electrode insulator may be attached to the highest upper surface of the armature latch up electrode. In other arrangements, the latch electrode insulator may be suspended between a pair of latch down or latch up electrodes, and may be mechanically attached to the relay structure at any corner of the latch electrode insulator. The electrodes and insulators need not be continuous films, such as membranes, but may be holes, lines, or grid patterns mechanically connected to a fixed base in other devices. The electrodes and insulators need not be continuous films such as membranes, but it is contemplated that they can be holes, lines or grid patterns in other devices if they are mechanically bonded to a fixed base.

1 through 5 show a load armature 159 suspended from the area of the second major armature, the fixed base of FIGS. 1 and 2A. In a manner similar to a latch armature, the load armature is in the form of a cantilever with one fixed area 160 and one area 161 free to deform. In some devices according to the invention, the armature is microfabrication-capable, such as silicon, silicon oxide, silicon nitride, gallium arsenide, quartz, polyimide or other polymers, or metals It is intended that it can consist of a layer of material). The actuator armature of the discussed embodiment embodies a layer of silicon oxide 8 μm thick selected to provide an insulating rigid armature structure suitable for microfabrication techniques.

In a manner similar to the cantilever beam of the actuator signal armature, the thickness and length of the multimorph actuator armature is greater than the width suitable for the beam expected to be deformed perpendicular to the plane of the substrate. It is made up of design importance. The load armature of the discussed embodiment is 180 μm long and 25 μm wide.

Attached to the armature of FIG. 2A in a position commonly facing the base substrate is a first electrically connected to a first load signal line by a first armature contact element path 121. The armature contact member 120. Attached at a location commonly facing the cover substrate is a second armature contact member 137 electrically connected to a fourth load signal line by a second armature contact member path 138. In some arrangements according to the invention, the materials of the armature contact member, the conductive path and the load signal line are of similar material and thickness, suitable for simple manufacture. In another arrangement according to the invention, the armature contact member is considered to be of a different material and thickness than the conductive path and load signal line in order to improve the mechanical and electrical properties of the contact itself. In some arrangements, the armature contact member, conductive path and load signal lines are made of different materials and thicknesses for reasons related to improved properties or ease of fabrication. In a preferred embodiment, the first armature contact member path and the second armature contact member path will be fabricated with a 4 μm thickness of gold alloy.

The size of the armature contact member in the device according to the invention can be from 0.5 μm 2 to 1 mm 2 in the whole area. The shape of a particular area is envisioned as a rectangle, circle, oval or other irregular geometric shape. In the device according to the invention which can be used in applications of very low or low signal load, the armature contact member can be between 0.25 and 30 μm in area. In a device more suitable for low or moderate signal loads, the armature contact member may be between 20 and 3000 [mu] m in area. It is further contemplated that in an apparatus suitable for handling high or very high signal loads, the armature contact member may be between 2000 and 1 mm 2 in total area.

The performance requirements of the contact members may require the use of different layers of material to provide improved mechanical wear properties over those of other electropathic materials used in the device according to the invention. In one device, these other layers may comprise a layer of hard metal, such as nickel, tungsten, rhenium, rhodium, or ruthenium, beneath or above the common contact member surface. It is considered that it can. It is further contemplated that alloys or alloys or layered combinations of such low resistance metals or other low resistance metals can be used to fabricate armature contact members. In the device according to the invention, it is expected that such materials used for armature contact members will have a thickness suitable for applications of almost 0.1 to 100 μm. The thickness of the armature contact member can vary across planar regions, providing versatility in component depth and shape for the provided applications and embodiments.

It is contemplated that the material thickness of the armature contact member according to the invention suitable for the lowest to the lowest signal load applications is in the range of 0.1 to 2 μm. Such contact members will be lighter, thinner, and higher resistance than thicker paths of the same material and planar shape. In devices suitable for low to medium signal loads, the material thickness of the contact member is in the range of 0.5 to 10 [mu] m and is considered to consist of moderate weight and resistance compared to other possible parts and paths of the same material. In other arrangements capable of switching between high or very high load signal power, the material thickness of the contact member is in the range of 5 to 100 μm and is high in weight and low compared to thinner parts of the same material. It is considered to consist of resistance. In the embodiment illustrated in FIGS. 1 to 5, the contact component is made of the same gold alloy suitably used for signal lines, and has a 0.5 μm rhenium overplate curved to provide a wear resistant contact area suitable for reliable contact. Is added.

It is appreciated that the geometry of the contact members, paths, and signal lines need not be limited to the particular shapes illustrated in FIGS. 1 and 2. In some arrangements in accordance with the present invention, it is contemplated that the conductive path may be secured to the top or bottom of the armature rather than across the center of the armature. This geometry is shown in the second and third embodiments illustrated in FIGS. 6-10 and 11-13, respectively. In some devices, the conductive paths represent most of the material of the armature, unlike the illustration of FIG. 1A, which limits the conductors to be less substantial than other armature materials. Conversely, in other devices, the mechanical properties of the armature conductor do not drive the mechanical properties of the armature structure. Such a design may be considered to be recognized that some conductive materials experience unsatisfactory long term mechanical degradation. Similarly, it is contemplated that the armature contact member is not limited to a flat geometry but may include a curved, stepped or surface-roughened shape.

Facing the first armature contact member shown in FIG. 2A is a base substrate contact member 122 electrically connected to the second load signal line by a conductive path 123. Facing the second armature contact member is a cover substrate contact member 139 electrically connected to the third load signal line by a conductive path 140. The geometry, material and thickness of the base substrate contact member, the cover substrate contact member, the first load signal line and the third load signal line, and the conductive paths are described in terms of device expectation and as shown in FIGS. 1 to 5. As an example, it should be considered in a manner similar to the armature contact component, the first load signal line and the fourth load signal line and the conductive path.

Some components not shown in the cross-sectional view of FIG. 2A or 3A and shown in FIG. 1 are those that define the contact armature 124 of the relay. The contact armature extends from zone 125 rigidly connected to the base armature or armature electrode to zone 126 free to deform. The functional value of these rigid connection zones and free zones is shown in the description of the cross-sectional views of FIGS. 5A, 5B and 5C. It is envisioned that the contact armature can be made of an insulating material as defined. In some arrangements according to the invention, it is recognized that the contact armature may be made of the same material as the inactive element of the load armature or actuator armature. In such a device, the contact armature is considered to be integral with and rigidly connected to these parts.

In the device according to the invention, the insulating material used for the contact armature may comprise microassembly materials such as silicon, silicon nitride, silicon oxide, quartz or polyimide or other insulating polymers. Materials suitably used for contact armatures are considered to be in the range of 0.3 μm to 1 mm, depending on the material of the relay, the armature geometry, and the application. In a device designed for the lowest or lowest signal load, it is considered that the material thickness of the contact armature is in the range of 0.3 to 8 mu m. In devices designed for low to medium signal load applications, the material thickness is considered to be in the range of 4 to 80 μm. For devices that can be used in applications requiring rigid and thick contact armatures, such as suitable for medium to high signal loads, the material thickness is considered to be in the range of 50 to 300 μm. However, for other devices having large planar dimensions and designed for applications of high to high signal loads, the material thickness is in the range of 200 μm to 1 mm.

The planar dimensions of the contact armature are considered to be comparable or smaller in size than the load signal armature and the multimorph actuator armature. These planar dimensions are in the range of 2 μm to 5 mm in width and dimension, respectively, depending on the contact force required for the application, the material thickness, and the relay in the latched state. In the device according to the invention in which the lowest to lowest signal load can be switched at a fast switching speed, the planar dimension is in the range of 2 to 20 μm. In an apparatus in which the lower to intermediate signal load can be switched, the planar dimension is considered to be in the range of 10 to 200 mu m. In other arrangements suitable for applications in which medium to high signal loads are switched at low speeds, planar dimensions are considered to be in the range of 100 μm to 1 mm. For large apparatuses that switch between high and high signal loads at low to very slow speeds, the planar dimension is in the range of 0.5 to 5 mm. With regard to the load signal armature, it is contemplated to be within the scope of application not only for parts of a solid rectangular design but also for parts that change to one or more dimensions by linear or nonlinear functions.

The contact armature of the embodiment illustrated in FIGS. 1-5 is a 100 μm wide silicon oxide beam that is 100 μm long and 6 μm thick. Such a device can provide the required operating performance for the characteristics of handling medium power at medium speeds, and can employ piezoelectric multimorph actuation as well as an electrostatic latching mechanism to the force required at the contacts themselves. Will be mechanically fastened.

4 is a cross-sectional view of the apparatus illustrated in FIG. 1 showing a portion of a relay incorporating a polymorphic actuator. Base substrate 102 and cover substrate 134, which are part of a fixed base, are provided in this example, and the armature of FIGS. 2A and 3A is suspended between these substrates. In the presently discussed embodiment of the present invention, the polymorph of FIG. 4 can be considered to be a piezoelectric polymorph actuator. The actuator includes an upper piezoelectric material 113 having an upper first drive signal connection 170 and a lower second drive signal connection 171 electrically connected to the upper and lower surfaces, respectively.

In the presently discussed embodiment, the lower material 114 may be piezoelectrically neutral. This bottom material 114 has an electrical connection 116 of the armature electrode secured to the bottom surface. In another arrangement according to the invention, it is recognized that the armature electrode can be fixed in the middle or on top of the underlying material. The electrical connection 121 of the first armature contact member is shown in FIG. 4 as well as the electrical connection 138 of the second armature contact member. It is appreciated that each electrical connection can exist on an insulating surface, which is the geometry required in a different device. The material, thickness and composition of the electrical path and the polymorphic actuator are similarly changeable within the scope of the present invention as discussed in the detailed description of FIGS. 1, 2A and 3A.

5A, 5B and 5C show cross-sectional views of the relay embodiment illustrated in FIGS. 1-5, with the cross-section taken in the free zone of the main armature system. It is recognized by those skilled in the art that this zone can be an important part of the relay design when incorporating a contact component that is reliable for electrical conduction when the relay is in the closed state. Base substrate 102 and cover substrate 134, which are part of the fixed base, are illustrated, and contact armature 124 is commonly suspended between these substrates. The contact armature is secured to the latch armature 125 in the position of armature latch down electrode 115 and armature latch up electrode 142. The armature armature has a free end 126 on which the first armature contact component 120 and the second armature contact 137 are located. Opposite the armature latch down and latch up electrodes are a base substrate electrode 117 and a cover substrate electrode 144, respectively. A fixed latch down electrode insulator 119 and a latch up electrode insulator 146 are fixed to the base substrate electrode and the cover substrate electrode. The base substrate contact component 122 is located on the top surface of the base substrate facing the first armature contact component, and the electrical connection 123 of the first armature contact component is shown extending to the center of the armature. The cover substrate contact component 139 is located on the bottom surface of the cover substrate facing the electrocutor contact component, and the electrical connection 138 of the second armature contact component also extends to the armature side.

The bending function of the contact armature is illustrated in FIGS. 5B and 5C showing the same cross section as in FIG. 5A except that the relay is in the closed and latched state rather than the passive state, which is described in more detail below. Is discussed. The contact armature is reliable to generate a curved spring force that generally forms some of the contact force between the armature contact parts and the base or cover substrate contact parts. FIG. 5B illustrates the bending in the contact armature when the relay is in the latched down state while FIG. 5C shows the relay in the latched up state. The initial gap between the latch electrodes (and latch electrode insulators) is greater than the original gap between the contact parts, and this difference is such that the contact armature spring must deflect when the relay is closed. to be. In some arrangements according to the invention, the contact armature spring force is considered to be the total contact force between the contact parts. In another arrangement according to the invention, the contact armature is also considered to be reliable only in part of the total contact force between the contact parts. In other arrangements, however, the contact armature is recognized as having very little or no contact force between the contact parts.

The first stable operating state of the relay shown in FIGS. 2A, 3A and 5A is defined as a passive state which is a relay condition when no control signal is applied to the device. It is recognized that this is a natural condition, so device stability is defined by the mechanical geometry and manufacturing details of the relay provided. 2A, 3A, and 5A provide typical examples of loads, latches, and contact armatures, respectively, in a passive state suitable for some devices designed according to the present invention, including the embodiments currently discussed. In these examples, the relay contact parts are not coupled, the polymorph actuator is in a commonly neutral state of stress equilibrium, and all latch electrodes are separated. In another arrangement according to the invention, the polymorph actuator armature or load signal armature can be rolled up rather than commonly flat when in the passive state. However, in other devices, the polymorph actuator armature or load signal armature can be rolled down rather than commonly flat when in the passive state.

If a relay state other than an inactive state is required, the drive down control signal may be applied to the relay actuator. An example of the consequence of this operation is a stable state defined as the first active state, where the mechanical limits of the device prevent further deflection of the relay armature. In some devices according to the present invention, the first active state can be exemplarily shown in FIGS. 2B and 3B, where the polymorphic actuator of FIG. 3B has been swung downward due to the drive control signal. The armatures of FIGS. 2B and 3B are mechanically connected in this embodiment such that some or all of the lower curvature induced by the latch armature can be connected to the load signal armature, which is in contact with the first actuator contact member and the base substrate. It is considered to be directed to the point where the member is fastened. It is recognized that precise contact of the armature latch down electrode to the latch down electrode insulator of the base substrate electrode is not required to define the first active state. Such contact may be enabled and is shown in the embodiment of FIG. 3B, and it is further contemplated that such contact may not occur in other embodiments of the present invention.

Once the operational state of the relay changes from an inactive open contact to a closed state of the first active state, it may be desirable in many applications to maintain the closed contact for a period that may be an unlimited time period. An additional relay state defined as the first latched state is disclosed to apply a latch down control signal across the capacitive member of the armature latch down electrode and the base substrate electrode to attract and hold them together at a constant power. This operation is contemplated in many devices according to the present invention which result in flattening the armature electrode and maintaining closed contact. The embodiment shown in FIG. 3C reflects this condition, where flattening the armature electrodes is reflected in flattening the load signal armature.

The first latched state allows removing the drive down control signal from the actuator and the relay will remain in the first latched state. In some devices, including the embodiments currently under discussion, the late removal of the latch control signal may send the relay back in an inactive state. In some devices, returning to an inactive state occurs due to the recovery of internal forces by the armature itself. In other devices, it is believed that forcible assitance from the polymorphic actuator will help return the relay to an inactive state by using drive up control signals.

In an embodiment the first active and first latched state describes one closed electrical contact path to the device. The present invention is for a double-throw device and additional relay states allow for a second closed electrical path. In order to close the second electrical path, a drive up control signal can be applied to the relay actuator. The result of this operation is a stable state defined as the second active state, where the mechanical limits of the device prevent further deflection of the relay armature. In some devices according to the present invention, the second active state can be exemplarily shown in FIGS. 2D and 3D, where the polymorphic actuator of FIG. The lower curvature induced in the latch armature is assumed to be mechanically coupled to the load signal armature, which causes it to be directed to the point of engaging the second actuator contact member and the cover substrate contact member. As a condition of the first active state, precise contact between the armature latch up electrode and the latch up electrode insulator of the base substrate electrode is not required to define the second active state, and it may be possible through this contact, FIG. 3D Is shown as an embodiment of the invention.

An additional relay state, defined as the second latched state, begins by applying the latch up control signal to the capacitive member of the armature latch up electrode and the cover substrate electrode, attracts them and locks them together with electrostatic force. In many of the devices according to the invention this operation is believed to result in flattening the armature electrode and maintaining a closed contact. The embodiment illustrated in FIG. 3E reflects this condition, where the flattening of the armature electrodes is reflected in the flattening of the load signal armature.

The second latched state allows for removal of the drive up control signal from the actuator and the relay will be left in the second latched state. It is believed that late cancellation of the latch control signal, including the embodiment currently under discussion, may send the relay back in an inactive state. In some devices, returning to inactivity occurs due to the recovery of internal forces by the armature itself. In other devices, forced support from the polymorphic actuator will help return the relay to an inactive state using a drive down control signal.

In some arrangements in accordance with the present invention, the piezoelectrically driven armatures of the embodiments shown in FIGS. 1-5 may be composed of two or more polymorphic materials with non-zero coefficient piezoelectric elements. In such a device, each non- Young's modulus material may be a layer composed of two or more materials of the piezoelectric ceramic or crystal described previously. In such polymorphic actuators, the upper piezoelectric material may expand during the lower contact. This polymorphism can generate twice the useful force for a particular device design that provides a fixed overall actuator armature thickness.

It is recognized that polymorphic actuators having one or more piezoelectric layers can be used to generate the closing force as well as the closing force as suggested in FIG. 3B. In some devices according to the invention the polymorphic open force in the first latched (down) state can be achieved by reversing the drive down control signal and applying the opposite as the drive up control signal. The ability to drive an actuator in a direction based on the polarity of the control signal is generally recognized as one advantage of piezoelectric polymorphisms. It should be noted that this advantage exists in the piezoelectric polymorph device according to the invention.

1-5 depict the structural members required for an embodiment characterized by a single piezoelectric release actuator structure for driving a single contact armature. It is anticipated that the present invention is intended to take into account the functional concept of any relay driven by a polymorphic actuator with electrostatic latching mechanisms. Additional embodiments are within the scope of the present invention when the polymorph consists of different actuator material combinations or the relay consists of multiple contact armatures, actuator armatures or both. 6 to 10 illustrate a second embodiment having an operation that is functionally equivalent to that of the first embodiment illustrated in FIGS. 1 to 5. The top view is provided in FIG. 6, and FIGS. 7 to 10 show detailed cross sections in an equivalent manner. The member number in the second embodiment starts with 200 instead of 100, and for clarity the functional equivalent of the first embodiment is the same in the last two digits.

6 is a functional plan view of a relay composed of two primary armature structures in the same manner as the relay of FIG. The member of FIG. 6 is considered to be similar to the member of FIG. 1, the other being in the geometric and material parts of the actuator component and the equivalent member in this embodiment. For the description of the hidden member of FIG. 1, the cover substrate is removed and the generic member not shown from the top view is indicated by dashed lines for clarity. The specific geometry, position and path of the signal lines are determined by the designer and shown in the examples provided for illustrative purposes. The material, thickness, and composition of the electrical pathway are stretchable within the scope of the present invention as discussed previously.

Fixed base 201, base substrate 202, cover substrate 234, first 203, second 204, and third 235 load signal lines, first 205, second 206 ), Third 255 and fourth 256 driving signal lines, and first 207, second 208, third 241 and fourth 285 latch signal lines become apparent in FIG. The latch armature 209 is illustrated as having one fixed end 210 and no deflection end 211 in a general direction to the base substrate. The load armature 259 is similarly shown to have an unbiased end 261, like one fixed end 260. The actuator latch down 216 and latch up 242 electrode paths required for the actuator latch down electrode 215 and actuator latch up electrode 242 as well as the first and fourth latch signal control lines are shown, respectively. In the presently discussed embodiment, the actuator latch electrode path is guided by a metallic anchor region from the armature to the base substrate, which in some devices may be a solder bump or other conductive mechanical electrical connection. Substrate latch electrodes 217, cover latch electrodes 244, and their paths 218 and 245, respectively, on the second and third latch control signal lines are shown similarly in FIGS. 6 and 8A. 8A shows that this embodiment has a latch down 219 and latch up 246 electrode insulator covering the substrate and cover latch electrodes, respectively.

The first actuator contact member 220 and the first actuator contact member path 221 are present in the first load signal line, and thus there is an electrical connection 223 from the substrate contact member 222 to the second load signal line. In this embodiment the first actuator contact member path is made by the metallic anchor region from the armature to the base substrate in a similar manner as discussed for the latch electrode path. The second actuator contact member 237 and the second actuator contact member path 238 are present in the first load signal line, whereby an electrical connection 235 is connected from the substrate contact member 239 to the third load signal line 235. have. In this embodiment, the second actuator contact member path is configured from the second actuator contact member through the first actuator contact member, and both actuator contact members are electrically connected. The load armature 224 is attached at one end 226 unbiased with one end 226 of the latch electrode in the region of the armature contact member.

The specific materials and geometries for this embodiment are chosen to devise a device that can handle very low load signal power at high switching speeds. The load armatures are 15 µm and 75 µm in planar width and length, respectively, and are fabricated to 2 µm thick silicon nitride. The load signal line and the contact member are made of 2 탆 sputtered gold. Part of the fixed base attached to the armature fixed end is a section of the silicon handle wafer, which is bonded to the ceramic base substrate via gold-platinum and solder connections. All conductors on the base substrate are 2 μm thick gold. The latch electrode insulator is 0.2 μm silicon nitride.

In contrast, the actuator shown in FIG. 3A is a piezoelectric release, and the primary actuator for this embodiment is a thermal polymorph. The thermal polymorph of the latch armature consists of two main release members, an upper thermal polymorph layer 227 and a lower thermal polymorph layer 228. In this actuator of this embodiment, the upper thermal polymorphism layer is designed to have a larger coefficient of thermal expansion. The thermal polymorph of the load armature consists of two main release members, an upper thermal polymorph layer 278 and a lower thermal polymorph layer 280, in which the lower layer is designed to have a higher coefficient of thermal expansion. The actuator of the latch armature is responsible for bending the relay downwards, while the actuator of the load armature is responsible for bending the relay upwards.

Thermal polymorphic constructions using metal materials for thermal polymorphic layers that require large coefficients of thermal expansion are typical for those skilled in the art. It is also recognized that the use of insulator materials for thermal polymorphic layers requiring a small coefficient of thermal expansion is also typical. In the presently discussed embodiment, the polymorph is 2 μm thick palladium for the upper polymorph layer 227 of the latch armature, 2 μm thick gold for the lower polymorph layer 280 of the load armature, and the counter layer 228 and ( 278) 2 μm thick silicon nitride.

Some devices in accordance with the present invention may be envisioned in which metal may be used for layers 227 and 280 and insulators may be used for layers 228 and 278. In some devices, materials that can be used for the thermal polymorphic material include metals such as gold, copper, silver, platinum, nickel and aluminum. In some devices, materials that can be used for either layer include semiconductors such as silicon, gallium arsenide, silicon germanium, and indium phosphide. It is also contemplated that stacked combinations of alloys or metals or semiconductors may be used in the device according to the invention. It is also contemplated that insulators such as silicon, silicon nitride, silicon dioxide, quartz or polyimide or other insulating polymers can be used as the materials that can be used in the thermal polymorphic material. It is also recognized that each polymorphic layer may consist of a stacked stack to add specific properties to the actuator.

The thickness of the thermal polymorphic actuator layer ranges from 0.1 to 500 μm depending on the material, fabrication process, application and geometry of the other member. In some devices according to the invention capable of switching the lowest signal load at the best switching speed, it is believed that the polymorph layer can range in thickness from 0.1 to 3 μm. It is anticipated that the polymorph layer can range from 2 to 30 μm in applications requiring signal loads from low to medium and high or medium switching speeds. Some devices will require thicker polymorph layers, as required in applications requiring medium to heavy signal loads at medium to slow switching speeds, and it is anticipated that polymorph layers 20 to 200 μm thick may be used. In high or very high signal load switching applications at slow or very slow speeds the polymorph layer can be expected to range in thickness from 150 to 500 μm. It is appreciated that the thickness or thickness range of the polymorphic layer need not be similar to other layers.

8A schematically shows a cross section of a first heating member 229, and FIG. 7A includes a second heating member 279. In some devices, such a member may be a resistive conductor trace in a path on the surface of the insulating layer. In the presently discussed embodiment, the heating element is made of 0.3 μm thick nickel-chromium alloy. In some devices according to the invention, the heating element can be made of a material having a resistance between 0.001 and 10 Ω-cm. In some devices, the heating member may be made of metal or semiconducting material. The thickness of the heat resistant portion in the device may range from 0.05 to 10 μm. In some devices, the resistive material may have a resistance of less than 0.1 Ω-cm and the thickness may be between 0.05 and 2 μm. In addition, in some devices including resistive materials having a resistance greater than 0.1 Ω-cm, it is expected that the thickness can be 0.5 to 10 μm.

Shown in FIG. 8A is a heating component insulator 230, which in this embodiment is a heating component electrically isolated from the conductive polymorphic layer. If the upper thermal polymorphism layer 227 is made of metal in the device according to the present invention, the insulating layer means acknowledging that the heating element 229 must be insulated from the layer 227 in order for the heating element to function properly. . The presently discussed embodiment contemplates that the upper polymorphic layer 227 is conductive and therefore profitable from insulation from the heating component. It is also contemplated that the present embodiment is that the lower polymorph layer 228 is insulated and thus can be adjacent to the heating element with proper operation without interference. In the presently discussed embodiment, it is noted that in a similar manner the polymorph layer 278 of the load armature is insulated and thus can be adjacent to the second heating component 279.

The heating component insulator is made of an insulating material previously defined for the latch electrode insulator. Possible materials used to make heating component insulators in accordance with the present invention are expected to include silicon nitride, silicon dioxide, quartz, or polyamide or other insulating polymers. It is expected that the materials used as heating component insulators can be thin in the range of 0.05 μm to 3 μm in proportion to any other material layer used in the manufacture of certain devices. It is expected that the thickness of the insulation part material in one device can range from 0.05 μm to 0.5 μm. Such ranges require applications where a thin layer of insulating material is possible and of sufficient quality to prevent destruction of the insulator due to the electric field strength. The heating component insulator of this embodiment is 0.1 mu m of high quality silicon nitride. In other devices where a thin layer of high quality insulating material is not possible, it is expected that the material thickness of the latched electrode insulator can range from 0.3 μm to 3 μm.

FIG. 9 is a cross-sectional schematic diagram of the apparatus illustrated in FIG. 6, showing a relay portion incorporated into a polymorphic actuator. FIG. The base substrate 202 and the cover substrate 234, which are part of the fixed base, are embodied in this illustration with the armature of Figs. In the presently discussed embodiment of the present invention, the actuator is thermal polymorphic. The actuator of the latched armature has a heating component electrical connection of a first drive signal connection 270 and a second drive signal connection 271 that respectively form part of the first heating component and are surrounded by the heating component insulator 230. Upper row polymorphic layer 227. The lower thermal polymorph layer 241 is of the same material as the actuator armature 209 and the actuator latch electrode path 216 is shown on the underside of the armature. The load signal path 221 is seen on the underside of the load armature in the same way and acts as the lower thermal polymorph. The actuator of the load armature integrates the heating component electrical connection of the third drive signal connection 255 and the fourth drive signal connection 256, which respectively form part of its heating component. The drive signal path is made from a 0.3 μm nickel-chromium alloy of the heating component, the latch signal path is made from a 0.2 μm nickel layer, and the load signal path is made from a 2 μm sputtered gold layer.

10A, 10B, and 10C show cross-sectional views of relays with the free area of the latch and load armature removed. This area incorporates contact components that enable electrical conduction when the relay is closed. The base substrate 202 and the cover substrate 234, which are part of the fixed base, are implemented with the contact armature 224 between the present substrate. The contact armature is attached 225 to the latch armature at the positions of the armature latch down 215 and latch up 242 electrodes, and the free end at which the first armature contact component 220 and the second armature contact component 237 are located. Has 226. The opposite armature latch down electrode is a base substrate electrode 217, and a latch down electrode insulator 219 is attached. The opposite armature latchup electrode is a cover substrate electrode 244, and a latchup electrode insulator 246 is attached. The base substrate contact component 222 is located on the upper surface of the base substrate in contact with the first armature contact component. The cover substrate contact component 239 is located on the bottom surface of the cover substrate in contact with the second armature contact component. The bending function of the contact armature is shown in FIGS. 10B and 10C, which are discussed in more detail in FIGS. 5A, 5B and 5C, with a cross sectional view as in FIG. 10A except when the relay is closed and latched rather than in a passive state. It is depicted.

FIG. 11 is a functional diagram schematic diagram depicting a third embodiment in which the relay consists of three primary armatures instead of the two discussed in the first embodiment. The relay of Figure 8 is designed with the actuator armature perpendicular to the load signal armature. It is appreciated that the arrangement for the actuator relays parallel or vertical in a particular device design and the specific number of armatures, respectively, are characterized by their skilled determination within the art for various materials, coupling structures, applications. 12 is a cross-sectional schematic view of the load armature of the relay embodiment illustrated in FIG. 11, in the passive and open states. 13A, 13B and 13C depict cross sections of the polymorphic actuator and contact armature of an embodiment. The number of parts for this third embodiment starts from 300, where the last two letters are related to the functional equivalents from the first and second embodiments for clarity.

The parts of FIG. 11 are considered to be similar to the parts of FIGS. 1 and 6, which in this embodiment have actuator parts for the same parts and different implementations in structure and material selection. As in the example of the embedded part of FIGS. 1 and 6, the cover substrate is removed and parts not generally visible from above are outlined in dotted lines for clarity. The specific structure and location of the signal lines and paths are at the discretion of the designer and represent the provided embodiments for the purposes of the illustrated examples. The material, thickness and synthesis of the electrical pass are considered to be flexible within the scope of the invention as discussed above.

The fixed base 301, the base substrate 302, the cover substrate 334, the first ship line 303, the second ship line 304, the third ship line 335, the first drive signal line 305, Second drive signal line 306, third drive signal line 355, fourth drive signal line 356, first latch signal line 307, second latch signal line 308, third latch signal line 357, fourth Components of the latch signal line 358, the fifth latch signal line 241, and the sixth latch signal line 291 are shown. Closed down actuator armature 309 is shown with one end fixation 310 and one end freedom 311 biased with respect to the perpendicular to the base substrate. Closed up actuator armature 389 is seen opposite the closed down actuator armature and has a fixed end 390 and a free end 391 symmetrically.

The armature for this embodiment is designed to withstand large load signals at slow switching speeds. The main material for the armature is a 12 micrometer thick single crystal silicon layer. The load armature is 200 mu m wide and 800 mu m long. The actuator armature is 250 μm wide and 650 μm long. The load signal lines and paths are made of an 8 μm thick copper alloy. Control signals and latch signal lines and paths are made of a sputtered 2 μm thick nickel-chromium alloy.

 Two actuator latch down electrodes 315 and 365 are shown, one at the bottom of the closed down actuator armature and the other at the bottom of the closed up actuator armature. The latch electrode paths 316 and 366 required for the first latch signal control line 307 and the third latch signal control line 357 can be clearly seen, respectively. The second latch control signal line and the fourth latch control signal. Substrate latch down electrode paths 318 and 378 of substrate latch down electrodes 317 and 367 for the line are shown in FIG. The load signal path 321 for the first actuator contact component 320 and the first load line is clearly shown in FIG. 12. Also shown in FIG. 12 is a load signal path 338 for the second actuator contact component 337 and the first loaded ship as the first actuator contact component. As the cover contact component path 340 is implemented from the cover contact component 339 to the third ship route 235, the board contact component path 323 is implemented from the board contact component 322 to the second ship route.

By means of the dual actuator design of the relay depicted in FIGS. 11 to 13, multiple contact armatures are realized. Closed-down actuator contact armature 324 is attached to one end 326 to the latch electrode and is free of deflect 325 in the armature contact component area. Closed-up actuator contact armature 374 is attached to one end 326 to the latch electrode and is free of deflect 325 in the armature contact component region. The closed down actuator is comprised of an extensible upper heat release layer 327 and a lower heat release layer 328 of similar material and structure, considered as thermal polymorphisms implemented and clearly illustrated above in FIG. 13. The drive-up actuator is composed of a lower thermal release layer 377 that is stretchable under the upper thermal release layer 378. Layers 328 and 378 are composed of layers of armature materials of the same name suitable for the depicted embodiment of FIGS. 11-13.

Resistive first heating component 329 provides a method of heating a closed release actuator having a control signal consisting of a current. As with the first heated component 229 discussed above suitable for the embodiment of FIGS. 6-10, it is contemplated that such a component can be a resistive serpentine path to the surface of the first heated component insulator 330. do. It is also contemplated that the material and thickness of such a part may be similar to that discussed appropriately for the previous embodiments. The second heating component 379 provides a method of heating the drive-up release actuator in a similar manner describing the second heating component of the previous embodiment. This component is electrically insulated by the second heating component insulator 380. It is recognized that the fixed beam of a double row release actuator is the result of a constrained range of operations involving cantilever arrangements.

FIG. 13A is a cross-sectional schematic view of the thermal release actuator relay embodiment depicted in FIG. 11, having a neutral state with no actuation or latch signal application with the component according to FIGS. 11 and 12. In the presently discussed embodiment, it is recognized that the two polymorphic actuators drive in opposite directions. In this embodiment, the closing down actuator is vertically downwardly perpendicular to the armature contact component when the closing down control signal is drawn in, whereas the closing up actuator is biased vertically upward with respect to the base substrate when the closing up control signal is drawn in. It is biased.

The relay state of the embodiment illustrated in Figs. 6-10 is the same as that of the first embodiment of Figs. 1-5. In a manner similar to the previous embodiment, FIG. 13B is a cross-sectional schematic view of the device in a fixed first activated state where the mechanical limits of the device prevent other armature deflections. The closed actuator of FIG. 13B is bent downward from the closed down control signal, although tightly bound by the fixed beam state and the bending force of the contact armature. The armatures of FIGS. 2A and 3A are mechanically paired in this embodiment, whereby some or all of the reduced downward bend in the actuator armature is paired with a load signal armature that deflects to a point associated with the actuator contact part and the base contact part. The contact of the first armature electrode to the latch down electrode insulator of the base substrate electrode is not necessary although such contact is illustrated in FIG. 13B.

The first latched state for this embodiment is initialized by applying latch control signals to both sets of latch electrodes for attracting and holding each other with electrostatic force. In many arrangements according to the invention it is contemplated that such action is a result of the flattening of the armature electrodes and the support of the closed contact. The embodiment illustrated in FIG. 13C reflects such a state. The first latched state allows removal of the drive control signal from the actuator and the relay will remain in the first latched state.

In some arrangements, it is contemplated that subsequent removal of the latch control signal may return the relay to the passive state by the armature's own internal restoring force. It is contemplated that forcing assistance from a closed up actuator in other devices, including the presently discussed embodiment, can assist in the return of the relay to the passive state. The second active state and the second latched state are not illustrated for brevity. Such a state may be achieved in the same manner as described in the previous embodiment illustrated in FIGS. 6 to 10.

It will be appreciated that various changes and modifications of the present embodiment will be apparent to those skilled in the art. Such changes and modifications are possible without departing from the spirit and scope of the present invention and without diminishing its accompanying benefits.

Claims (20)

Board; A cover located on the substrate; A base attached to the substrate; A load signal line including a first load signal line, a second load signal line, and a third load signal line; A control signal line including a first drive signal line, a second drive signal line, a first latch signal line, and a second latch signal line; Compound armature structure comprising: A latch armature structure, the latch armature structure including Anchor area attached to the base, A latch deflection region, the latch deflection region including: A first region attached to the anchor region, and A second region that can be moved between an inactive position and a lower latched position and an upper latched position, the latch deflection region further comprising: A first material that changes in size by a first degree responsive to the first stimulus and changes in size by a third degree in response to the second stimulus, and A second material that changes in size by a second degree due to the first stimulus, and changes in size by a fourth degree in response to the second stimulus, The first and second degrees may not be equivalent and apply a first deflection force to the latch deflection region in response to a first magnetic pole, the first deflection force from a non-active position toward a lower latched position. Tends to move; The third and fourth degrees may not be equivalent and apply a second deflection force to the latch deflection region in response to a second magnetic pole, the second deflection force from the inactive position toward the upper latched position. Tends to move; A first latch electrode, the first latch electrode is located at a position on the lower surface of the second region of the latch deflection region and electrically connected to the first latch signal line; A second latch electrode, the second latch electrode is formed on the first latch electrode lower substrate, and is electrically connected to the second latch signal line; A first latch electrode insulator, wherein the first latch electrode insulator prevents electrical contact between the first latch electrode and the second latch electrode when the second region of the deflection region is in the lower latched position; A third latch electrode, the third latch electrode is located at a position on the upper surface of the second region of the latch deflection region and electrically connected to a second latch signal line; A fourth latch electrode and the fourth latch electrode are formed on the lower surface of the cover above the third latch electrode and are electrically connected to the third latch signal line; The second latch electrode insulator, the second latch electrode insulator, prevents electrical contact between the third latch electrode and the fourth latch electrode when the second region of the deflection region is in the upper latched position; Means for selectively applying a first magnetic pole or a second magnetic pole to the latch deflection region; Load armature structure, including: An anchor region attached to the base; A coupling region connecting the load armature structure to the latch armature structure; Contact deflection zones, including: A first region attached to the anchor region, and A second area moved between the open position and the lower closed position and the upper closed position, The lower closed position is set when the second region of the latch deflection region is in the lower latched position, and the upper closed position is set when the second region of the latch deflection region is in the upper latched position; A first contact electrode formed at a position of the lower surface of the second region of the contact deflection region; The second contact electrode formed on the substrate immediately below the first contact electrode, the first contact electrode and the second contact electrode, when the contact deflection region is in the lower closed position, electrical contact occurs with the first contact force, and the contact deflection region Moves relative to the latch deflection region; A third contact electrode formed at a position of the upper surface of the second region of the contact deflection region; And A fourth contact electrode formed on the lower surface of the cover above the third contact electrode, wherein the third contact electrode and the fourth contact electrode are in electrical contact with the second contact force when the contact deflection region is in the upper closed position, And wherein the contact deflection region moves relative to the latch deflection region. The method of claim 1, The first material has a first thermal expansion coefficient; The second material has a second thermal expansion coefficient; A first electrical current flowing between the first drive electrode and the second drive electrode provides a thermal first stimulus, thereby generating a first deflection force within the latch deflection region of the latch armature structure; And And the second electrical current flowing between the first drive electrode and the second drive electrode provides a thermal second stimulus, thereby generating a second deflection force within the latch deflection region of the latch armature structure. The method of claim 2, A first electrical current flows through the thermal resistance portion, the thermal resistance portion is included as a latch deflection region of the latch armature structure, and And the second electrical current flows through the heat resistance portion. The method of claim 3, wherein The thermally assembled portion is a micro-assembled relay that is included as the first material layer. The method of claim 3, wherein And the thermal resistance part is formed between the first material layer and the second material layer. The method of claim 1, And the first latch electrode insulator is formed in the first latch electrode, and the second latch insulator is formed in the third latch electrode. The method of claim 1, And the first latch electrode insulator is formed on the second latch electrode, and the second latch insulator is formed on the fourth latch electrode. The method of claim 1, The first material layer has a first level of piezoelectric reaction; The second material layer has a second level of piezoelectric reaction; A first voltage applied between the first drive electrode and the second drive electrode provides a piezoelectric first magnetic pole, thereby generating a first deflection force within the latch deflection region of the latch armature structure; And the second voltage applied between the first drive electrode and the second drive electrode provides a piezoelectric second magnetic pole, thereby generating a second deflection force within the latch deflection region of the latch armature structure. The method of claim 8, One of the first and second materials has a level of piezoelectric reaction that is essentially zero. The method of claim 8, The latch deflection region further comprises a third layer of material, The third material has a third level of piezoelectric reaction, The piezoelectric reaction at the third level is not equal or zero A first voltage applied between the first drive electrode and the second drive electrode is applied across the third material layer; The piezoelectric reaction of the third material layer contributes to the first deflection force generated in the latch deflection region of the latch armature structure; A second voltage applied between the first drive electrode and the second drive electrode is applied across the third material layer; The piezoelectric reaction of the third layer of material contributes to the second deflection force generated within the latch deflection region of the latch armature structure. The method of claim 1, The first material layer has a first initial level of internal stress, The second material layer has a second initial level of internal stress, At least one of the first initial level and the second initial level of the internal stress is a compressive force, The use of a first mechanical deflection stimulus for the latch armature structure causes a buckling of the latch armature structure in the direction of the first mechanical deflection stimulus, whereby the buckling reduces the initial level portion of the internal stress with the compressive force. And by discharging, moving the second region of the latch deflection region to the lowest latch position. The method of claim 11, External mechanical means utilizes the first mechanical deflection stimulus to the latch armature structure, The external mechanical means utilizes the second mechanical deflection stimulus with respect to the latch armature structure. In accordance with claim 11, The response of the latch deflection region to the first magnetic pole applies the first mechanical deflection magnetic pole to the latch electrical structure, And the response of the latch deflection zone to the second pole applies the second mechanical deflection stimulus to the latch electrical structure. The method of claim 13, The first stimulus is one of a thermal stimulus and a piezoelectric stimulus, And the second magnetic pole is one of a thermal magnetic pole and a piezoelectric magnetic pole. The method of claim 11, At least a portion of the first mechanical deflection stimulus is used for a shape memory effect The first layer of material has a first level of shape-memory effect for expansion Wherein the second material layer has a second level of shape-memory effect, At least a portion of the second mechanically polarized stimulus is used for the shape-memory effect. The first layer of material has a first level of shape-memory effect for expansion Wherein the second material layer has a second level of shape-memory effect- Micro Assembly Relay. Substrate; A cover disposed on the substrate; A first base and a second base; A load signal line including a first load signal line, a second load signal line, and a third load signal line; A control signal line including a second drive signal line, a second drive signal line, a first latch signal line, and a second latch signal line; A first anchor region attached to the first base, A second anchor region attached to the second base, Latch Deflection Zone The latch biasing region is a first region attached to the first anchor region, a second region attached to the first anchor region, and a third region movable between an inactive position and a lowest latch position and an uppermost latch position Wherein the latch deflection region is sized by a first amount of response in response to a first stimulus and is sized by a third amount of response in response to a second stimulus And a second material changing in size by a second reaction amount according to the first stimulus, and changing in size by a fourth reaction amount in response to the second stimulus, The first and second reaction amounts are not equal, and the first biasing force, wherein the first biasing force moves the second region from the inactive position toward the lowest latch position, to the first stimulus Used for the latch deflection region, The third and fourth reaction amounts are not equal, and the second deflection force, the second deflection force, moves the second region from the inactive position toward the uppermost latch position; For use in the latch deflection region A first latch electrode disposed on a lowermost surface portion of the first region of the latch deflection region; A second latch electrode disposed on a lowermost surface portion of the second region of the latch deflection region; A third latch electrode formed on the substrate under the first latch electrode; A fourth latch electrode formed on the substrate under the second latch electrode; A first latch electrode insulator blocking electrical contact between the first latch electrode and the third latch electrode when the third region of the deflection region is in the latched position; A second latch electrode insulator blocking electrical contact between the second latch electrode and the fourth latch electrode when the third region of the deflection region is in the latched position; Means for selectively utilizing the first magnetic pole for the latch deflection region; A fifth latch electrode disposed on an uppermost upper limit surface portion of the first region of the latch deflection region; A sixth latch electrode disposed on an uppermost upper surface portion of the second region of the latch deflection region; A seventh latch electrode generally formed on the lowest first surface portion of the cover above the fifth latch electrode; An eighth latch electrode formed on the second lowermost second surface portion of the cover; A third electrode insulator blocking electrical contact between the fifth latch electrode and the seventh latch electrode when the third region of the deflection region is in the highest latched position; A fourth electrode insulator blocking electrical contact between the sixth latch electrode and the eighth latch electrode when the third region of the deflection region is in the highest latched position; Means for selectively utilizing the second magnetic pole for the latch deflection region A latch armature structure comprising a; An anchor region attached to the third base; A connection area for connecting the latch armature structure to the load armature structure (copling region); Contact deflection zone The contact deflection region comprises a first region attached to the third anchor region and a second region that is movable between an open position and a lowest closed position and an uppermost closed position; Constructed when the third region of the latch deflection region is the lowest lower closed position, and the highest upper closed position is constructed when the third region of the latch deflection region is the highest upper position; A first contact electrode formed on a lowermost surface portion of the second region of the contact deflection region; Generally, a second contact electrode formed on the substrate under the first contact electrode, wherein the first contact electrode and the second contact electrode are latched. Causing an electrical contact with a first contact force when the contact deflection region moving with the deflection region is in the lowest closed position; A third contact electrode formed on the uppermost upper surface portion of the second region of the contact deflection region; Generally, a fourth contact electrode formed on the third lowermost surface portion of the cover on the second contact electrode, wherein the third contact electrode and the fourth contact electrode move together with the latch deflection region. Causes foldable contact with a second contact force when in the uppermost closed position   A load armature structure comprising a; Micro-assembled relay comprising a. The method of claim 16, A first contact electrode is formed on the lower surface of the third region of the latch deflection region, and the first contact electrode is located between the first latch electrode and the second latch electrode; And the third contact electrode is formed on the upper surface of the third region of the latch deflection region, and the third contact electrode is located between the fifth latch electrode and the sixth latch electrode. The method of claim 16, The latch deflection region A third material that varies in size by a third value in response to the third stimulus, and Further comprising a fourth material varying in size by the fourth value in response to the third stimulus, The third and fourth values are not equivalent, apply a third deflection force to the latch deflection region in response to the third magnetic pole, and the third deflection force tends to move from the lower latched position toward the inactive position; And means for applying a third magnetic pole to the third and fourth materials in the latch deflection region. In the operating method of the micro-assembled relay manufactured according to claim 1, Setting an inactive state, where The second region of the latch armature structure is in an inactive position, The second region of the load armature structure is an open position; Setting a first active state by applying a first stimulus to the latch armature structure, wherein The first magnetic pole is of sufficient magnitude and duration to apply the first deflection force to the deflection region of the latch armature structure, The first deflection force is sufficient to move the first latch electrode in close proximity to the second latch electrode and set the lower latched position, A first deflection force is transmitted to the contact deflection region structure through the coupling region and moves the first contact electrode in electrical contact with the second contact electrode; Setting a lower latched state, where A first voltage is applied between the first latch electrode and the second latch electrode, the first voltage induces a first electrostatic attachment between the first latch electrode and the second latch electrode, The first electrostatic attachment is of sufficient strength to maintain the lower latched position without successive application of the first magnetic pole, and The first stimulus is removed; Maintaining a first voltage to maintain a lower latched state for a first desired time; Returning the microfabricated relay to an inactive state by removing the first voltage; Establishing a second active state by applying a second magnetic pole to the latch armature structure, wherein The second magnetic pole is of sufficient magnitude and time to apply a second deflection force to the deflection region of the latch armature structure, The second deflection force is sufficient to move the third latch electrode very close to the fourth latch electrode and set the upper latch position, The second deflection force is transmitted through the coupling region in a contact deflection region structure and moves the third contact electrode in electrical contact with the fourth contact electrode; Setting an upper latched state, where A second voltage is applied between the third latch electrode and the fourth latch electrode, the second voltage induces a second electrostatic attachment between the third latch electrode and the fourth latch electrode, The second electrostatic attachment is of sufficient strength to maintain the upper latched position without successive application of the second magnetic pole, and The second stimulus is removed; Maintaining a second voltage to maintain a lower latched state for a second required time; And Returning the microfabricated relay to an inactive state by removing the second voltage. In the operating method of the micro-assembled relay manufactured according to claim 16, Setting an inactive state, where The second region of the latch armature structure is in an inactive position, The second region of the load armature structure is an open position; Setting a first active state by applying a first stimulus to the latch armature structure, wherein The first magnetic pole is of sufficient magnitude and duration to apply the first deflection force to the deflection region of the latch armature structure, The first deflection force is sufficient to move the first latch electrode very close to the second latch electrode, move the third latch electrode very close to the fourth latch electrode, and set the lower latched position, The first deflection force is transmitted through the coupling region in a contact deflection region structure and moves the first contact electrode in electrical contact with the second contact electrode; Setting a lower latched state, where A first voltage is applied between the first latch electrode and the second latch electrode, the first voltage induces a first electrostatic attachment between the first latch electrode and the second latch electrode, A second voltage is applied between the third latch electrode and the fourth latch electrode, the second voltage induces a second electrostatic attachment between the third latch electrode and the fourth latch electrode, The first and second electrostatic attachments are of sufficient strength to maintain a lower latched position without successive application of the first magnetic pole, and The first stimulus is removed; Maintaining a first voltage and a second voltage to maintain a lower latched state for a first desired time; Returning the microfabricated relay to an inactive state by removing the first and second voltages; Establishing a second active state by applying a second magnetic pole to the latch armature structure, wherein The second magnetic pole is of sufficient magnitude and time to apply a second deflection force to the deflection region of the latch armature structure, The second deflection force is sufficient to move the fifth latch electrode very close to the seventh latch electrode, move the sixth latch electrode very close to the eighth latch electrode, and set the upper latch position, The second deflection force is transmitted through the coupling region in a contact deflection region structure and moves the third contact electrode in electrical contact with the fourth contact electrode; Setting an upper latched state, where A third voltage is applied between the fifth latch electrode and the seventh latch electrode, the third voltage induces a third electrostatic attachment between the fifth latch electrode and the seventh latch electrode, A fourth voltage is applied between the sixth latch electrode and the eighth latch electrode, the fourth voltage induces a fourth electrostatic attachment between the sixth latch electrode and the eighth latch electrode, The third and fourth electrostatic attachments are of sufficient strength to maintain the upper latched position without continuous application, and The second stimulus is removed; Maintaining a third voltage and a fourth voltage to maintain a lower latched state for a second required time; And Returning the microfabricated relay to an inactive state by removing the third and fourth voltages.