KR20040055471A - Method for detecting defect of wafer - Google Patents

Method for detecting defect of wafer Download PDF

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Publication number
KR20040055471A
KR20040055471A KR1020020082156A KR20020082156A KR20040055471A KR 20040055471 A KR20040055471 A KR 20040055471A KR 1020020082156 A KR1020020082156 A KR 1020020082156A KR 20020082156 A KR20020082156 A KR 20020082156A KR 20040055471 A KR20040055471 A KR 20040055471A
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South Korea
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defect
wafer
image
contrast
depth
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KR1020020082156A
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Korean (ko)
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김현용
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주식회사 하이닉스반도체
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Priority to KR1020020082156A priority Critical patent/KR20040055471A/en
Publication of KR20040055471A publication Critical patent/KR20040055471A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE: A method for detecting a defect of a wafer is provided to check the size, height, depth and contrast of the defect by comparing and analyzing the image of the defect in inspecting the defect of the wafer. CONSTITUTION: The defect of the wafer is inspected to input the image of the defect as a video image. The inputted image is converted into a digital signal through a defect classifying board. The size, height, depth and contrast of the defect is compared and analyzed by using the digital signal. The color and type analyzed in a wafer map according to the type of the defect is displayed. The defect is classified and displayed according to the code of the defect.

Description

웨이퍼의 결함 검출 방법{method for detecting defect of wafer}Method for detecting defect of wafer

본 발명은 결함 검출 방법에 관한 것으로, 보다 구체적으로는 웨이퍼 표면의 결함을 검출할 수 있는 웨이퍼의 결함 검출 방법에 관한 것이다.The present invention relates to a defect detection method, and more particularly, to a defect detection method of a wafer capable of detecting defects on a wafer surface.

도 1은 종래 기술에 따른 웨이퍼의 결함 검출 방법을 설명하기 도면이다.1 is a view for explaining a defect detection method of a wafer according to the prior art.

종래 기술에 따른 웨이퍼의 결함 검출 방법은 웨이퍼 검사장비를 이용하여 웨이퍼의 결함과 패턴 불량을 검출하였다. 이러한 웨이퍼 검사장비를 이용하여 검출된 결함들은 점으로 표시된다.In the defect detection method of the wafer according to the prior art, a defect and a pattern defect of the wafer are detected by using a wafer inspection equipment. Defects detected using such wafer inspection equipment are represented by dots.

한편, 레이저를 이용하여 웨이퍼의 결함을 검출하는 방식이 있지만, 이러한 레이저를 이용하여 검출된 결함들도 마찬가지로 점으로 표시된다.On the other hand, there is a method of detecting a defect of a wafer using a laser, but defects detected using such a laser are also indicated by dots.

이와 같이 점으로 표시된 결함은 전자를 이용한 장비를 이용하여 다시 한번 정확한 검출을 실시함으로서, 도 1에 도시된 바와 같이, 결함의 크기, 높이, 깊이및 콘트라스트를 확인할 수 있다.As shown in FIG. 1, the defects represented by the dots are accurately detected by using the electronic equipment, so that the size, height, depth, and contrast of the defects can be confirmed.

따라서, 종래의 기술에서는 상기 웨이퍼 검사장비 또는 레이저 등을 이용하여 1차로 점으로 표시된 결함의 유무를 확인하고 나서, 2차로 전자를 이용한 장비를 이용하여 다시 한번 정확한 검출을 실시하여 결함의 크기, 높이, 깊이 및 콘트라스트를 일일이 확인해야 한다.Therefore, in the related art, the wafer inspection equipment or the laser is used to confirm the presence of defects indicated by dots at the first time, and then the accurate detection is performed once again using the equipment using electrons in the second order, thereby the size and height of the defects. The depth, contrast and contrast must be checked.

따라서, 종래의 기술에서는 웨이퍼의 결함 검출 시간이 길어지고, 또한 결함 검출 공정이 번거로운 문제점이 있었다.Therefore, in the prior art, the defect detection time of the wafer is long, and the defect detection process is troublesome.

이에 본 발명은 상기 종래의 문제점을 해결하기 위해 안출된 것으로, 웨이퍼 결함 검사 시, 검출된 결함의 이미지를 비교 분석하여 결함의 크기, 높이, 깊이 및 콘트라스트를 확인할 수 있는 웨이퍼 결함 검출 방법을 제공함에 그 목적이 있다.Accordingly, the present invention has been made to solve the above-mentioned conventional problems, and provides a wafer defect detection method capable of confirming the size, height, depth and contrast of a defect by comparing and analyzing an image of a detected defect during wafer defect inspection. The purpose is.

도 1은 종래 기술에 따른 웨이퍼의 결함 검출 방법을 설명하기 위한 도면.1 is a view for explaining a defect detection method of a wafer according to the prior art.

도 2는 본 발명에 따른 웨이퍼의 결함 검출 방법을 설명하기 위한 도면.2 is a view for explaining a defect detection method of a wafer according to the present invention.

도 3은 본 발명에 따른 결함의 디지털 이미지를 분석한 도면.3 is a diagram analyzing a digital image of a defect according to the present invention.

상기 목적을 달성하기 위한 본 발명에 따른 웨이퍼의 결함 검출 방법은 웨이퍼의 결함을 검사하여 상기 결함의 이미지를 비디오 이미지로 입력하는 단계와, 입력된 이미지를 결함 분류 보드를 통해 디지털 신호로 바꾸는 단계와, 디지털 신호를 이용하여 결함의 크기, 높이, 깊이 및 콘트라스트 를 비교 분석하는 단계를 포함하는 것을 특징으로 한다.The defect detection method of the wafer according to the present invention for achieving the above object comprises the steps of inspecting the defect of the wafer and inputting the image of the defect as a video image, and converting the input image into a digital signal through the defect classification board; And comparing and analyzing the size, height, depth, and contrast of the defect using a digital signal.

상기 결함의 크기, 높이, 깊이 및 콘트라스트 를 비교 분석한 다음, 결함의 유형에 따라 웨이퍼 맵에 분석된 컬러 및 모형을 표시하는 단계와, 결함을 코드에 따라 분류하고 디스플레이하는 단계를 추가한다.Comparatively analyzing the size, height, depth and contrast of the defect, and then displaying the analyzed color and model on the wafer map according to the type of defect, and classifying and displaying the defect according to the code.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

본 발명은 웨이퍼 검사 장비의 카메라를 통해 검출된 결함의 이미지를 결함 분류 보드로 신호를 보내고, 상기 결함 분류 보드를 통해 디지털 신호로 바꾼 다음, 디지털 신호를 통해 입력된 결함의 크기, 높이, 깊이 및 콘트라스트 등을 분석 및 상호 비교하여 같은 종류의 결함을 유형별로 분류한다.The present invention sends an image of a defect detected through a camera of a wafer inspection equipment to a defect classification board, converts the image into a digital signal through the defect classification board, and then measures the size, height, depth and Contrasts are analyzed and compared to classify defects of the same type by type.

도 2는 본 발명에 따른 웨이퍼의 결함 검출 방법을 설명하기 위한 도면이다.2 is a view for explaining a defect detection method of a wafer according to the present invention.

또한, 도 3은 본 발명에 따른 결함의 디지털 이미지를 분석한 도면이다.3 is a diagram analyzing a digital image of a defect according to the present invention.

본 발명의 일실시예에 따른 웨이퍼의 결함 검출 방법은, 도 2에 도시된 바와 같이, 먼저 웨이퍼 검사 장비의 카메라를 통해 웨이퍼를 검사한 후 검출된 결함의 이미지를 비디오 이미지로 입력한다.In the defect detection method of the wafer according to an embodiment of the present invention, as shown in FIG. 2, the wafer is first inspected through a camera of the wafer inspection equipment, and then an image of the detected defect is input as a video image.

이어, 입력된 신호를 결함 분류 보드를 통해 디지털(digital) 신호로 바꾸어 준다.Then, the input signal is converted into a digital signal through the defect classification board.

이 후, 도 3에 도시된 바와 같이, 상기 디지털 신호를 통해 입력된 결함의 크기, 높이, 깊이 및 콘트라스트를 비교하여 세분화한다.Thereafter, as shown in FIG. 3, the size, height, depth, and contrast of the defect input through the digital signal are compared and subdivided.

이어, 세분화된 결함의 유형에 따라 웨이퍼 맵(map)에 분석된 컬러(color) 및 모형으로 표시한다.Subsequently, the color and model analyzed are displayed on the wafer map according to the type of the subdivided defects.

그런 다음, 결함 분류에 따른 코드에 따라 결함을 분류하고 디스플레이(display)한다.Then, the defects are classified and displayed according to the code according to the defect classification.

본 발명에 따르면, 웨이퍼 검사 시 검출된 결함의 이미지를 결함 분류 보드를 통해 디지털 신호로 바꾸고 나서, 상기 디지털 신호를 통해 검출된 결함의 크기, 높이, 깊이 및 콘트라스트를 분석 상호 비교함으로써, 같은 종류의 결함을 유형별로 분류할 수 있다.According to the present invention, by converting an image of a defect detected during wafer inspection into a digital signal through a defect classification board, and then comparing the size, height, depth, and contrast of the defect detected through the digital signal, the same kind of analysis is performed. Defects can be classified by type.

이상에서와 같이, 본 발명은 웨이퍼 검사 장비의 카메라를 통해 검출된 결함의 이미지를 결함 분류 보드로 신호를 보낸 다음, 검출된 결함의 크기, 높이, 깊이 및 콘트라스트 등을 분석 및 상호 비교하여 같은 종류의 결함을 유형별로 분류함으로써, 웨이퍼 맵만을 이용하여 검출된 결함의 유형을 알 수 있다.As described above, the present invention sends an image of a defect detected through a camera of the wafer inspection equipment to a defect classification board, and then analyzes and compares the size, height, depth and contrast of the detected defect, and the like. By classifying the defects by type, the type of defects detected using only the wafer map can be known.

또한, 본 발명은 웨이퍼의 결함을 검출하는 동시에 검출된 결함의 신호를 결함 분류 보드로 보내어 이미지 비교 분석을 실시함으로써, 웨이퍼의 결함 확인 시간 및 검사 시간을 단축시킬 수 있는 이점이 있다.In addition, the present invention has the advantage that the defect confirmation time and inspection time of the wafer can be shortened by detecting a wafer defect and simultaneously sending a signal of the detected defect to a defect classification board to perform image comparison analysis.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (2)

웨이퍼의 결함을 검사하여 상기 결함의 이미지를 비디오 이미지로 입력하는 단계와,Inspecting a wafer for defects and inputting the defect image as a video image; 상기 입력된 이미지를 결함 분류 보드를 통해 디지털 신호로 바꾸는 단계와,Converting the input image into a digital signal through a defect classification board; 상기 디지털 신호를 이용하여 상기 결함의 크기, 높이, 깊이 및 콘트라스트 를 비교 분석하는 단계를 포함하는 것을 특징으로 하는 웨이퍼의 결함 검출 방법.And comparing and analyzing the size, height, depth, and contrast of the defect using the digital signal. 제 1항에 있어서, 상기 결함의 크기, 높이, 깊이 및 콘트라스트 를 비교 분석한 다음,The method of claim 1, wherein the size, height, depth and contrast of the defect are compared and analyzed. 상기 결함의 유형에 따라 웨이퍼 맵에 분석된 컬러 및 모형을 표시하는 단계와,Displaying the analyzed color and model on a wafer map according to the type of defect; 상기 결함을 코드에 따라 분류하고 디스플레이하는 단계를 추가하는 것을 특징으로 하는 웨이퍼의 결함 검출 방법.Classifying and displaying the defects according to codes.
KR1020020082156A 2002-12-21 2002-12-21 Method for detecting defect of wafer KR20040055471A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730051B1 (en) * 2004-09-29 2007-06-20 다이닛뽕스크린 세이조오 가부시키가이샤 Defect detection apparatus and defect detection method
KR100769790B1 (en) * 2006-09-29 2007-10-25 주식회사 하이닉스반도체 Method for detecting a defect of dark field apparatus
KR101253916B1 (en) * 2009-02-03 2013-04-16 큐셉트 테크놀로지스 인크. Patterned wafer inspection system using a non-vibrating contact potential difference sensor
CN111323423A (en) * 2018-12-14 2020-06-23 精工爱普生株式会社 Defect detection device and defect detection method
CN112417191A (en) * 2019-08-20 2021-02-26 华润微电子（重庆）有限公司 Defect scanning result processing method, device and system and storage medium

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100730051B1 (en) * 2004-09-29 2007-06-20 다이닛뽕스크린 세이조오 가부시키가이샤 Defect detection apparatus and defect detection method
KR100769790B1 (en) * 2006-09-29 2007-10-25 주식회사 하이닉스반도체 Method for detecting a defect of dark field apparatus
KR101253916B1 (en) * 2009-02-03 2013-04-16 큐셉트 테크놀로지스 인크. Patterned wafer inspection system using a non-vibrating contact potential difference sensor
CN111323423A (en) * 2018-12-14 2020-06-23 精工爱普生株式会社 Defect detection device and defect detection method
CN111323423B (en) * 2018-12-14 2024-01-30 精工爱普生株式会社 Defect detection device and defect detection method
CN112417191A (en) * 2019-08-20 2021-02-26 华润微电子（重庆）有限公司 Defect scanning result processing method, device and system and storage medium
CN112417191B (en) * 2019-08-20 2023-09-26 华润微电子（重庆）有限公司 Defect scanning result processing method, device, system and storage medium

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