KR20040055197A - Method for forming a pattern of conductive metal using organometallic compounds - Google Patents

Abstract

PURPOSE: A method for forming a pattern of conductive metal interconnection by using an organometallic compound is provided to form metal pattern having an improved adhesion to a substrate, a conductivity characteristic and surface roughness by treating the organometallic compound with light or heat to form a pattern and by thermo-compressing the pattern. CONSTITUTION: A predetermined pattern is formed on a substrate by a composition with an organometallic compound, electromagnetic wave or heat. The pattern is oxidized, deoxidized or heat-treated to form an interconnection pattern composed of a metal or a metal oxide. The interconnection pattern is thermo-compressed.

Description

Method for forming a pattern of conductive metal using organometallic compounds}

The present invention relates to a method for forming a pattern of a conductive metal having improved adhesion and conductivity using an organometallic compound, and more specifically, i) a composition comprising an organometallic compound and an electromagnetic wave or heat on a substrate. Forming a predetermined pattern and then oxidizing or reducing the same or performing heat treatment to obtain a wiring pattern formed of a metal or a metal oxide; And, ii) relates to a method of forming a pattern of a conductive metal having improved adhesion and physical properties comprising the step of thermocompression bonding the obtained wiring pattern.

BACKGROUND In electronic devices such as integrated circuits and liquid crystal display devices, metal wiring patterns to be formed on substrates are becoming finer as the integration degree increases and the device size becomes smaller. In order to form a fine pattern of metal wiring on a substrate, photolithography is mainly used using photoresist. In the photolithography process, chemical vapor deposition (CVD), plasma deposition, or A metal material layer serving as a basis for wiring is first formed on the substrate by using an electroplating method, and then a photoresist is applied on the metal layer, and the photoresist is exposed and developed under a photomask to form a patterned photoresist layer After obtaining a metal layer comprising a, and by etching the metal layer by a method such as reactive ion etching to form a metal pattern of a fine pattern on the substrate. Currently, metals used as wiring materials are limited to metals having low adhesion, good process characteristics, and satisfactory adhesive properties, such as Al, Cr, or Mo, in consideration of ease of processing, adhesion to substrates, and conductive properties. . However, as electronic devices become larger and more integrated, the length of the entire wiring becomes longer, but the width of the wiring becomes relatively narrower. As a result, the display quality deteriorates due to an increase in resistance and signal delay in the metal wiring. In particular, the problem is an absolute obstacle in the development of high-definition, large-area TFT-LCD.

As a solution to this problem, the use of Al-alloys, for example AlNd, which have a low resistivity, is now disclosed, but Al-alloys not only increase their resistivity with the addition of dissimilar metals, but also with n + a-Si and ITO. Due to the high contact resistance, it can be used only as a multilayer structure of Cr / AlNd / Cr, resulting in a complicated process resulting in high production costs and a significant drop in productivity. This led to a review of conventional metallization materials (see Table 1), which resulted in better contact properties on the amorphous silicon layer with lower resistivity than Al-alloy materials currently used. Process development for materials such as Cu, Ag, Pd, or Ni metals is of great interest:

characteristic Ag Cu Au Pure Al AlNd Thin Film Resistivity (μΩ㎝) 2.1 2.3 2.4 (Bulk) 3.1 Gate 4.5S / D 7.0 n + a-Si contact O X X X X ITO contact O O O X X Wet Etch Etchant development Etchant development Etchant development O O Dry Etching O X X O △ Chemical resistance (corrosion resistance) X X O △ △ Thermal resistance X △ O X O Adhesion with Lower Film XX X △ O O Target price O O XX O X

However, in the case of the copper (Cu) metal or silver (Ag) metal, there is no metal organic compound suitable for the chemical vapor deposition method which is widely used in forming a fine pattern, and there is no appropriate etchant in the photolithography process using a photoresist. In general, the adhesion to the lower substrate material is poor, so it is easy to peel off during the subsequent processing, and the application of the photolithography process using the photoresist is fundamentally difficult.

In order to improve the adhesive force between the metal wiring and the substrate, methods of introducing a separate adhesive layer metal such as Ti and chromium, or forming an oxide film / nitride film or the like are known. However, this results in a limitation of productivity by applying a complicated process, and therefore, a method for improving adhesion, conductivity and surface roughness between metal and substrate in a metal wiring manufactured by a non-sputtering method has been studied.

For example, US Pat. No. 5,064,685 discloses a method of obtaining a metal pattern through thermal decomposition by applying a metal organic ink to a substrate and then heating with a laser, but in this case, the adhesion between the obtained metal pattern and the substrate is still Not satisfactory

As another example, U. S. Patent No. 5,534, 312 discloses coordination of a photoreactive organic compound on a metal to coat a synthesized organometallic coordination compound on a substrate, and then the film is placed under vacuum or a specific gas atmosphere and irradiated with electromagnetic waves. Disclosed is a method of directly obtaining a metal pattern by inducing a photo-chemical reaction in a region of a metal oxide and converting the metal coordination compound in an exposure region into a new metallic material sticking to a substrate. At this time, the organic metal coordination compound is a metal coordination compound having at least one ligand in alkali or alkaline earth metal, transition metal, Al, actinium-based metal, etc., the ligand includes at least one azide group, preferably acetylacetonate, Dialkyldithiocarbamate, carboxylate, pyridine, amine, diamine, arsine, diarcin, phosphine, diphosphine, arene, or alkoxy ligand, alkyl ligand, and aryl ligand. After applying the synthesized organometallic compound on the substrate and passing the light through the patterned mask, the light directly reacts with the organometallic compound to decompose and decompose the organic ligands in the metal, the remaining metals around A metal oxide film pattern is formed by reaction with a metal atom or oxygen in the atmosphere. However, the above method does not disclose the formation of a wiring of a metal or a metal oxide made of Ag or Cu, which is drawing attention as a next-generation high-conductivity wiring material, and in the wiring of other metals, most of the ligands are desorbed by photoreaction. In order to make a metal or a metal oxide film, ligand contamination may remain on the metal wiring, and thus it is difficult to apply to the actual process. Furthermore, in order to improve the electrical conductivity of the formed oxide film, the hydrogen / nitrogen mixed gas is flowed, and a high cost is required since the reduction reaction and the surface heat treatment are performed for 30 hours to 30 hours at a high temperature of 200 ° C. or higher. Since the steric hindrance is composed of a relatively large ligand, the space of the ligand decomposed by light irradiation is large, and thus the shrinkage of the metal film thickness increases. As a result, when the metal pattern is formed according to the above method, the shrinkage of the metal film reaches 75 to 90%, causing cracking and cracking of the metal film, thereby causing a critical problem in adhesion to the substrate. In addition, there are problems such as high resistivity of the formed metal wiring and poor surface roughness.

Therefore, in the art, a method of forming a wiring pattern made of a highly conductive metal containing Ag or Cu, which is attracting attention for high integration and size of an electronic device, has excellent adhesion between a metal and a substrate, and has a low specific resistance. There is a need for development of a method for forming a metallization pattern having excellent surface roughness characteristics.

The present inventors have made diligent efforts to solve the problems of the prior art as a result, and after forming the pattern by treating the organometallic compound with light or heat, and then thermo-compression bonding the pattern with the substrate, the conductive properties and the surface roughness characteristics It was confirmed that this greatly improved metal pattern can be obtained, and the present invention was reached.

In conclusion, it is an object of the present invention to provide a method for obtaining a metallization pattern with improved adhesion, resistivity and surface roughness.

1 is a schematic diagram schematically showing the formation of metal wiring according to the present invention.

Figure 2 is a schematic diagram schematically showing an example of a thermocompression process in the method according to the present invention.

3 is a scanning electron microscope (SEM) photograph of the surface of the metallization before and after the thermocompression bonding process in the method according to the present invention.

Figure 4 is an atomic force microscope (AFM) photograph of the surface of the metallization before and after the thermocompression bonding process in the method according to the present invention.

One aspect of the present invention for achieving the above object relates to a method for forming a pattern of a conductive metal having an improved adhesion and conductive properties using an organometallic compound, more specifically, iii) a composition comprising an organometallic compound, Forming a pattern on a substrate using electromagnetic waves or heat, and then oxidizing or reducing the same or heat treatment to obtain a wiring pattern formed of a metal or a metal oxide; And, ii) relates to a method of forming a pattern of a conductive metal having improved adhesion and physical properties comprising the step of thermocompression bonding the obtained wiring pattern.

Another aspect of the present invention relates to a metal wiring pattern obtained by the above method and a liquid crystal display device including the same.

Hereinafter, the method according to the present invention will be described in detail by dividing step by step.

Step (i)

In order to form a high conductivity metal wiring pattern according to the present invention, first, by forming a predetermined pattern using a composition containing an organometallic compound on the substrate, and electromagnetic waves or heat, and then oxidized or reduced or heat treatment A wiring pattern made of metal or metal oxide is obtained.

Since the method according to the present invention does not require processing at a high temperature as will be described later, the material of the substrate used in forming the metal pattern is not particularly limited. For example, a substrate made of an inorganic material such as silicon or glass, as well as a substrate made of an organic material such as plastic, and a substrate made of a composite of an inorganic material and an organic material may be used. In particular, it has an advantage that can be effectively applied to an organic insulator substrate such as polyether sulfone.

The composition containing the organometallic compound used in the present invention is a soft lithography or whether the pattern forming method is a photo-chemical reaction

It depends on whether or not soft lithography is used. First, the case of photo-chemical reaction will be described.

(A) Using photo-chemical reactions:

When the photo-chemical reaction is used, a composition containing a specific organometallic compound is applied on a substrate, and after exposure and development, it is oxidized or reduced to form a wiring pattern made of a metal or a metal oxide.

A composition comprising an organometallic compound is prepared by a) dissolving an organometallic compound represented by Formula 1 in b) an organic solvent:

M _m L _n X _p

(Wherein

M is a transition metal, lanthanide or main group metal;

L is a ligand;

X is 1 to trivalent anion;

m is an integer from 1 to 10, wherein when M is 2 or more, each M may be the same or different from each other;

n is an integer from 0 to 60, and when n is 2 or more, each L may be the same or different from each other, and when there are two or more metals, n may also act as a ligand connecting the metal and the metal;

p is an integer of 0 to 60, and when p is 2 or more, each X may be the same or different from each other, where n and p are not simultaneously 0).

The number of ligands in the organometallic compound varies depending on the type of metal and its oxidation number, and it is possible to bond up to 0 to 6 per metal. In addition, the number of the anions can also be bonded to 0 to 6 per metal.

The metal M constituting the organometallic compound is preferably a post-transition metal belonging to Groups 9 to 12, more preferably a metal selected from the group consisting of Co, Ag, Au, Cu, Pd, Ni and Pt.

L is a ligand bound to a metal, and is an organic compound containing a main atom such as N, P, As, O, S, Se, Te, preferably a compound containing the main atom and consisting of 20 carbons or less . Specifically, acetylacetonate, acetate, β-ketoiminate, β-diiminate, β-ketoester, dialkyldithiocarbamate, carboxylate, oxaleto, halogen, hydrogen, hydroxy, cyano, nitro , Anionic ligands, pyridine, amines, diamines, arsines, diarsines, phosphates, exemplified by nitrates, nitroxyls, azides, carbonates, thiocyanatos, isothiocyanatos, alkoxy or derivatives thereof Fin, diphosphine, arene, carbonyl, imidazolylidene, ethylene, acetylene, water, thiocarbonyl, thioether or derivatives of the above compounds can be used.

X serves as an anion to match the electrical neutrality of the metal compound, and may or may not be coordinated with the metal atom. Specifically, halogen, hydroxy, cyano (CN ^-), nitro (NO ₂ ^-), nitrate (NO ₃ ^-), nitroxyl, azide (N ₃ ^-), thio when isocyanato, isothiocyanato when Arne Ito, tetraalkylborate (BR ₄ ⁻ , where R is Me, Et or Ph), tetrahaloborate (BX ₄ ⁻ , wherein X is F or Br), hexafluorophosphate (PF ₆ ⁻ ), triflate (CF ₃ SO ₃ ^- may be an anion of the like), sulfate (SO ₄ ^2-) and carbonate (CO ₃ ^{2-) -),} tosylate (Ts.

The type of organic solvent used to prepare the composition including the organometallic compound is not particularly limited, but may be acetonitrile, propionitrile, pentanenitrile, or hexanenitrile.

(hexanenitrile), heptanenitrile, isobutylnitrile

Nitrile solvents such as these; Hexane, heptane, octane, dodecane

aliphatic hydrocarbon solvents such as dodecane; Anisole, mesitylene

aromatic hydrocarbon solvents such as mesylene and xylene; Methyl Isobutyl Ketone

ketone solvents such as (methyl isobutyl ketone), 1-methyl-2-pyrrolidinone (1-methyl-2-pyrrolidinone), cyclohexanone and acetone; Tetrahydrofuran

(tetrahydrofuran), diisobutyl ether, isopropyl ether

ether solvents such as (isopropyl ether); Acetate solvents such as ethyl acetate, butyl acetate, and propylene glycol methyl ether acetate; Isopropyl Alcohol

alcohol solvents such as isopropyl alcohol, butyl alcohol, hexyl alcohol, and octyl alcohol; Preference is given to using inorganic solvents or mixtures of these solvents.

The composition including the organometallic compound is coated on the desired substrate, exposed and developed to form a wiring pattern made of a metal compound directly on the substrate.

The coating method of the composition is spin coating, roll coating, dip coating, thermal evaporation, spray coating, flow coating or screen printing. (screen printing) and the like can be used, but is not limited thereto. Preferably spin coating is used.

Although the light source used for the electromagnetic radiation is not limited, it is most preferable to use ultraviolet (UV) light.

When exposing the coated composition, the organometallic compound in the composition is decomposed, resulting in a difference in solubility between the exposed portion and the non-exposed portion.

In more detail, the compound of the exposed part is separated from the ligand bound to the metal atom by electromagnetic irradiation, so that the other metal compound becomes more unstable and accelerates decomposition, thereby changing to metal or metal oxide depending on the exposure atmosphere. . Photochemical reaction of organometallic compounds with light

The mechanism differs depending on the metal and the ligand, but in general: ① metal to ligand charge transfer, ② ligand to metal transfer

(ligand to metal charge transfer), ③ di orbital- the orbital excited state

(d-dexcitation state) and (4) due to the action of intermolecular charge transfer, the bond between the metal and the ligand is unstable first, and this bond is broken and decomposition occurs.

One of the important features of the present invention is that until the pattern of the metal or metal oxide obtained by the pattern forming process is completely decomposed by light, as in the prior art, the organometallic compound becomes almost pure metal or metal oxide. Instead of exposing, it is sufficient to expose only the time when the exposed part does not melt in the solvent during development. Therefore, it is further advantageous in that the exposure time can be shortened, and the shortening of the exposure time has an advantage in that the production efficiency is greatly increased in that it means an increase in productivity.

After the exposure step, it is possible to obtain a metal or metal oxide pattern consisting of only the exposed portions by removing the non-exposed portions using a developing solvent. The developing solvent is a solvent used in the preparation of the composition, a mixed solvent in which two or more solvents of the composition are mixed for controlling the dissolution rate, or an inorganic solvent commonly used in a semiconductor process, for example, tetramethylammonium hydroxide ( TMAH) can be used, and in order to obtain a clean pattern, it is also possible to use said developing solvent alternately.

The exposure and development process may be performed in a vacuum atmosphere or air, oxygen, hydrogen, nitrogen, argon or a mixed gas atmosphere according to circumstances, and may be performed at a temperature in a range in which no thermal decomposition of an organometallic compound occurs at room temperature or .

The obtained pattern can be converted into a desired metal or metal oxide by oxidation or reduction, or by heating at high temperature in a nitrogen and hydrogen gas atmosphere. At this time, in order to obtain a purer metal, it is preferable to proceed with a reduction reaction.

As the reducing agent, an organic or inorganic reducing agent may be used. Preferably, hydrazines are used as the organic reducing agent; Silanes; Amines or derivatives thereof are used, and metal hydrides such as NaBH ₄ and LiAlH ₄ are used as the inorganic reducing agent. These organic and inorganic reducing agents can be dissolved in a solvent or used by themselves, and can react with the substrate in the form of gas phase or liquid phase reaction.

As the oxidizing agent, organic or inorganic oxidizing agents can be used.

In order to facilitate understanding of the present invention, a method of obtaining a silver metal wiring pattern according to the present invention will be described as an example.

The silver (Ag) salt is reacted with an organic ligand such as alkylamine to obtain an organic silver compound having good solubility, which is dissolved in a nitrile or alcohol solvent, spin coated onto a substrate, and then exposed to light by a photo-reduction reaction. Most of the organic ligands are desorbed. This is developed to remove the non-exposed portions to form a desired pattern on the substrate. The pattern can be reduced with an organic reducing agent to obtain a relatively pure silver (Ag) pattern.

(B) Using soft lithography:

In the method according to the present invention, as a step (iii), not only the pattern formed by photo-chemical reaction, but also the pattern formed using soft lithography can be used as crystal nuclei in a subsequent step. "Soft lithography" here refers to micro-contact printing

(microcontact printing), microtransfer printing, micro molding in capillary (MIMIC), and solvent-assistance micromolding. The transfer of a pattern of organic compounds or organic materials onto a substrate using an elastomeric stamp or mold. Soft lithography forms a self-assembled monolayer of certain compounds on a substrate by contact printing and also forms microstructures in the material by embossing and replica molding. do.

In the present invention, an elastomeric PDMS (polydimethylsilane having a micropattern:

polydimethylsilane) is used as a mold or a stamp, and as an organic compound, an organic metal compound solution containing a metal such as palladium, silver, or platinum is injected into the mold or coated on a stamp, and then transferred to a predetermined substrate. To obtain.

Examples of the organometallic compound solution which can be used for soft lithography in the present invention include-and-.

After the pattern is formed, the organic component may be volatilized by applying ultraviolet rays or heat, or may be converted to a desired metal or metal oxide by heating at a high temperature in a nitrogen and hydrogen gas atmosphere.

In addition to the above, a pattern can be formed by a direct printing method.

(Ii) step:

Since the metal or metal oxide pattern obtained in step iii) has low crystallinity and density, poor electrical conductivity, adhesion to the substrate, and surface roughness characteristics are improved, and thermal conductivity is performed to improve crystallinity, metal density and surface roughness, thereby improving conductivity. In addition, it also improves the adhesion to the lower substrate.

The thermocompression may be performed using all known thermocompression apparatuses, but preferably a pressing machine or a rolling machine is used. When pressing the temperature is in the range that does not damage the substrate and the metal pattern in consideration of the characteristics of the substrate, A temperature of 40 to 400 ° C. is preferred, and the pressure at the time of compression is in the range in which the substrate or the metal pattern is not damaged in consideration of the characteristics of the substrate to be used, but preferably in the range of 10 kg / cm 2 to 1,000 kg / cm 2.

The method according to the invention does not involve high temperature heat treatment as described above, and is further advantageous in that it can be applied to a very wide range of substrate materials.

Since the method according to the present invention does not involve high temperature heat treatment as described above, it is further advantageous in that it can be applied to a very wide range of substrate materials.

EXAMPLE

Hereinafter, the configuration and effects of the present invention will be described in more detail with specific examples, but these examples are only intended to more clearly understand the present invention and are not intended to limit the scope of the present invention.

Preparation Example of Photosensitive Organometallic Coordination Compound: Ag (NH ₂ Pr) _n (NO ₂ ) Synthesis of mixtures (n = 1, 2, 3 and 4)

In synthesizing all the compounds using a Schlenk technique or a Glove box technique was carried out in a nitrogen atmosphere excluding moisture or oxygen atmosphere. In a 50 mL round Schlenk flask, 3.4 g (20.0 mmol) of AgNO ₂ was dissolved in 15 mL of acetonitrile (CH ₃ CN), followed by droplets using a syringe of propylamine (1.2 g; 20.3 mmol). Added. After the reaction was stirred at room temperature for about 1 hour, the mixture was filtered using a 0.2 m membrane filter, blocked with light, and all solvent was removed over 3 to 4 hours under reduced pressure to obtain a colorless oil. ^{The 1} H-NMR spectral results are as follows:

¹ H-NMR (CD ₃ CN, ppm): 2.68 [t, 2H, N-CH ₂ )], 1.49 [m, 2H, CH ₂ CH ₃ ], 0.90 [t, 3H, CH ₂ CH ₃ ]

Example 1 Wiring Formation and Thermocompression Process

(Iii) step:

The compound synthesized in Preparation Example 1 was dissolved in a nitrile or alcohol solvent, respectively, to prepare a solution of an organic metal coordination compound, and the solution was spin-coated on a glass substrate, respectively. Using Oriel's UV-exposure as a light source, a wide band of ultraviolet light is exposed through a photomask while varying the output to form a pattern, and then the same solvent as the solvent is used. By developing to obtain a pattern. The substrate with the pattern was immersed in an alcohol solution of 0.1 mol% of hydrazine for about 30 seconds to effect a reduction reaction.

(Ii) step:

The obtained metal pattern was thermocompression-bonded by changing the temperature, time, and pressure under the conditions as shown in Table 2 using a heat press (FIG. 2) produced by itself. The resistivity and adhesion of the obtained metal pattern were measured using a 4 point probe and a scratch tester manufactured by Lesca, Japan, respectively. The results are shown in Table 2 below.

In addition, SEM and AFM of the surface before and after thermocompression of the obtained metal pattern are shown in FIGS. 3 and 4.

Example 2 Wiring Pattern Formation and Thermocompression Process Using Soft Lithography

(Iii) step:

After preparing an isopropanol solution containing palladium (II) acetate (5% by weight), polydimethylsiloxane having a fine pattern of capillary form was formed.

Capillary injection was performed on (poly (dimethylsiloxane: PDMS). The pattern was formed and heated to 150 ° C. to volatilize the organic coordination compound to obtain a palladium metal interconnect.

The obtained pattern was immersed in an alcohol solution of 0.1 mol% of hydrazine for about 30 seconds for reduction.

(Ii) step:

The films obtained under the conditions of Table 3 were thermocompressed using the same method as in Example 1. The adhesive strength of the obtained metal pattern was measured and shown in Table 3.

As can be seen from Table 2 and Table 3 and Figures 3 and 4, the metal wiring pattern obtained by the method according to the present invention can be seen that the conductivity and adhesion is very excellent, the surface condition is also improved.

Using the method according to the present invention, the organic metal compound thin film can be formed using a simple coating method without the conventional physical vapor deposition method, and then a high-conductivity metal pattern having good adhesion can be formed by thermocompression bonding. Therefore, a metal wiring pattern can be efficiently obtained within a short time without going through a sputtering process requiring a high vacuum condition and a microphotographic etching process using a photosensitive resin. The metal wiring obtained by the method according to the present invention can be applied to metal wiring of flat panel display elements such as organic EL or liquid crystal display elements.

Claims (8)

Iii) forming a predetermined pattern on the substrate by using a composition containing an organometallic compound and electromagnetic waves or heat, and then oxidizing or reducing the same, or performing heat treatment to obtain a wiring pattern made of a metal or a metal oxide; And ii) thermocompression bonding the obtained wiring pattern. The method of claim 1, wherein the pattern formation in step (iii) is performed by coating a composition including an organometallic compound of Formula 1 on a substrate to form a thin film, selectively exposing the thin film, and then developing the glass after development. A method of forming a pattern of a conductive metal, wherein the film is oxidized or reduced to form a wiring pattern made of a metal or a metal oxide: [Formula 1] M _m L _n X _p (Wherein M is a transition metal, lanthanide or main group metal; L is a ligand; X is 1 to trivalent anion; m is an integer from 1 to 10, wherein when M is 2 or more, each M may be the same or different from each other; n is an integer from 0 to 60, and when n is 2 or more, each L may be the same or different from each other, and when there are two or more metals, n may also act as a ligand connecting the metal and the metal; p is an integer of 0 to 60, and when p is 2 or more, each X may be the same or different from each other, where n and p are not simultaneously 0). The metal M constituting the organometallic compound is a metal selected from the group consisting of Co, Ag, Au, Cu, Pd, Ni and Pt; L is a ligand bound to a metal, and is a compound consisting of up to 20 carbons containing major atoms such as N, P, As, O, S, Se, Te; X is a non-coordinating or coordinated to the metal atom, halogen, hydroxy, cyano (CN ^-), nitro (NO ₂ ^-), nitrate (NO ₃ ^-), nitroxyl, azide (N ₃ ^-), thio Cyanato, isothiocyanato, tetraalkylborate (BR ₄ ⁻ , wherein R is Me, Et or Ph), tetrahaloborate (BX ₄ ⁻ , wherein X is F or Br), hexafluorophosphate (PF ₆ ^-), triflate (CF ₃ SO ₃ ^-), tosylate (Ts ^-), sulfate (SO ₄ ^2-) and a carbonate or 1, selected from the group consisting of (CO ₃ ^2-) It is an organometallic compound which is two or more anions, The pattern formation method of the conductive metal characterized by the above-mentioned. According to claim 2, In the case of the oxidation reaction using an organic or inorganic oxidizing agent, In the case of the reduction reaction, hydrazine (hydrazine); Silanes; An organic reducing agent of amines or derivatives thereof, or an inorganic reducing agent of metal hydride is used. The method of claim 1, wherein the pattern formation in step (iii) uses an elastomeric PDMS (polydimethylsilane) as a mold or a stamp and uses a solution of an organometallic compound containing a metal of palladium, silver, or platinum. After injection into the mold or coating on the stamp, it is transferred to a predetermined substrate, and then formed into a pattern, followed by the application of ultraviolet rays or heat to volatilize the organic components, or by heating at a high temperature in a nitrogen and hydrogen gas atmosphere to a desired metal or metal oxide. Forming a pattern by converting, The pattern formation method of the conductive metal characterized by the above-mentioned. 6. The conductive method according to any one of claims 1, 2 and 5, wherein the thermocompression method of step (ii) uses a heat press or a heat rolling method. Method of forming patterns of metals. 6. The thermocompression bonding according to claim 1, wherein the thermocompression of step (ii) is carried out at a temperature of 40 to 400 ° C. and a pressure of 10 kg / cm 2 to 1,000 kg / cm 2. A metal wiring pattern forming method. A flat panel display device comprising a metal wiring manufactured by the method of any one of claims 1, 2 and 5.