KR20030081695A - Backlight for Liquid Crystal Displays - Google Patents

Backlight for Liquid Crystal Displays Download PDF

Info

Publication number
KR20030081695A
KR20030081695A KR1020020020043A KR20020020043A KR20030081695A KR 20030081695 A KR20030081695 A KR 20030081695A KR 1020020020043 A KR1020020020043 A KR 1020020020043A KR 20020020043 A KR20020020043 A KR 20020020043A KR 20030081695 A KR20030081695 A KR 20030081695A
Authority
KR
South Korea
Prior art keywords
layer
thin film
carbon nanotubes
backlight
liquid crystal
Prior art date
Application number
KR1020020020043A
Other languages
Korean (ko)
Other versions
KR100842934B1 (en
Inventor
백문수
태경섭
박재영
이병철
박영돈
Original Assignee
나노퍼시픽(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나노퍼시픽(주) filed Critical 나노퍼시픽(주)
Priority to KR1020020020043A priority Critical patent/KR100842934B1/en
Publication of KR20030081695A publication Critical patent/KR20030081695A/en
Application granted granted Critical
Publication of KR100842934B1 publication Critical patent/KR100842934B1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133604Direct backlight with lamps
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133608Direct backlight including particular frames or supporting means
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/36Micro- or nanomaterials
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)

Abstract

PURPOSE: A back light of a liquid crystal display is provided to form a carbon nano tube film with excellent adhesion characteristic to an electrode substrate and with high density, thereby obtaining uniform luminance and extending the life span of the back light. CONSTITUTION: An upper substrate(1) used as an anode is coated with an ITO film(2), and a fluorescent layer(3) is coated on the ITO film. A conductive thin film(6) is coated on the surface of a lower substrate(7) used as a cathode, and a metal thin film(9) is formed on the conductive thin film through an electroplating or sputtering. A carbon nano tube(10) is formed on the metal thin film, and fine metal grains(4) for improving adhesion to an electrode substrate and the carbon nano tube are filled between carbon nano tubes. A spacer(5) is placed between the upper and lower substrates, and the space inbetween is vacuumed.

Description

액정표시장치용 백라이트{Backlight for Liquid Crystal Displays}Backlight for Liquid Crystal Displays

본 발명은 퍼스널 컴퓨터 및 모니터의 액정 디스플레이 또는 액정 텔레비젼 장치 등에 사용되는 백라이트 제조에 관한 것이다.TECHNICAL FIELD The present invention relates to backlight production for use in liquid crystal displays or liquid crystal television devices of personal computers and monitors.

일반적으로 액정표시소자는 무게가 가볍고 소비전력도 적다는 장점을 가지고 있어서, 컴퓨터 또는 텔레비젼 분야의 디스플레이장치에 널리 보급되고 있다. 그러나 액정표시소자는 그 자체가 발광하여 화상을 형성하지 못하고 후방에서 균일한 빛을 받아야만 화상을 형성하므로 이러한 문제점을 극복하기 위해 사용되는 백라이트는 액정 디스플레이 장치의 중요한 디바이스이다.In general, liquid crystal display devices have the advantages of low weight and low power consumption, and thus are widely used in display devices in the computer or television fields. However, since the liquid crystal display itself does not form an image by emitting light, but forms an image only after receiving uniform light from the rear, the backlight used to overcome this problem is an important device of the liquid crystal display device.

제 3도는 일본공개특허 평성8-313710호, 일본공개특허 평성9-251807 호에 도시된 종래의 에지 라이트 방식의 백라이트 구조를 보여주는 단면도이며, 도면에서 발광체(F)는 냉음극 형광관으로 액정표시장치(A) 끝면 하단에 배치되고, 여기서 나온 빛은 반사판(E)에 의하여 액정판 하단으로 전달된다. 투과성 재료로 이루어지는 도광판(D)의 상면에 조명면의 빛을 액정판 전체에 골고루 분산하여 보내는 확산판(C)이 있으며, 확산판(C) 상부에 위치한 프리즘판(B)에 의하여 빛을 어느 정도 집합하고 액정판의 정면 휘도를 향상시킨다.3 is a cross-sectional view showing a conventional edge light backlight structure shown in Japanese Patent Application Laid-Open No. Hei 8-313710 and Japanese Patent Application Laid-Open No. Hei 9-251807. In the drawing, the light emitting body F is a cold cathode fluorescent tube. It is disposed at the bottom of the end surface of the device A, and the light emitted therefrom is transmitted to the bottom of the liquid crystal panel by the reflecting plate E. On the upper surface of the light guide plate (D) made of a transmissive material, there is a diffusion plate (C) which distributes the light of the illumination surface evenly over the entire liquid crystal plate, and the light is emitted by the prism plate (B) located above the diffusion plate (C). Aggregate and the front brightness of a liquid crystal panel is improved.

이상과 같이 구성된 일본공개특허 평성 8-313710호, 평성 9-251807호의 종래의 백라이트 장치는 일반적으로 구성이 복잡하여 생산비가 높아질 뿐만 아니라 광원이 측면에 있어서 빛의 반사와 투과에 의하여 소비 전력에 대한 효율이 현저하게 낮아지고 휘도의 균일성을 보장하기 어렵다는 문제점이 있었다. 뿐만아니라 각종 디스플레이의 대면적화 및 고화질화에 따라 종래의 백라이트 장치로는 충분한 휘도특성을 발휘할수 없다.Conventional backlight devices of Japanese Patent Application Laid-Open Nos. 8-313710 and 9-251807, which are configured as described above, are generally complicated in construction, which leads to high production costs, and the light source is used to reflect power consumption due to reflection and transmission of light at the sides. There is a problem that the efficiency is significantly lowered and it is difficult to ensure uniformity of brightness. In addition, due to the large area and high image quality of various displays, the conventional backlight device may not exhibit sufficient luminance characteristics.

이러한 액정 디스플레이의 문제를 해결하기 위해서 평판형 냉음극형광관 방식, 플라즈마 방식, 전계방출 방식등 다양한 방법으로 기술개발이 이루어 지고 있다.In order to solve the problem of the liquid crystal display, technology development has been made by various methods such as a flat panel cold cathode fluorescent tube method, a plasma method, and a field emission method.

평판형 냉음극형광관 방식의 백라이트는 한국공개특허 특2000-26971에서와 같이 전면유리판과 이에 대응하는 후면유리판 사이에 일정 간격으로 격벽을 설치하여 방전통로를 형성시키고 그 양측에 전극을 설치한다. 이들 두전극의 상부에 유전체층을 설치하며 전기 방전통로를 형성하는 격벽과 전면 유리판 내부면에 형광체층을 도포하고 밀봉시킨후 방전용가스를 충진하여 백라이트를 제조하였다. 그러나 이러한 방식은 제조시 원가상승 및 소비전력이 상승하는 문제와 수은을 사용하기 때문에 환경친화적이지 못하다.In the case of a flat cold cathode fluorescent lamp type backlight, a barrier rib is formed at regular intervals between a front glass plate and a corresponding rear glass plate to form discharge passages, and electrodes are installed at both sides thereof, as in Korean Patent Application Laid-Open No. 2000-26971. A backlight was manufactured by disposing a dielectric layer on top of the two electrodes, applying a phosphor layer on an inner surface of a partition wall and a front glass plate to form an electric discharge passage, and sealing the gas. However, this method is not environmentally friendly due to the use of mercury and the problem of cost increase and power consumption during manufacturing.

한편 플라즈마방식은 상판의 전면에 투명전극을 도포하고 하판 전체에 면전극을 도포, 각각 형광층을 형성한다. 그리고 상하판 사이의 방전에 의한 플라즈마로부터 형광체를 발광하는 방식이다. 그러나 이러한 상하판 전극구조는 방전효율이 매우 낮기 때문에 고열이 발생해 백라이트로써 실용가능성이 낮다.(한국공개특허 특2002-12096)On the other hand, in the plasma method, a transparent electrode is coated on the entire upper plate and a surface electrode is applied to the entire lower plate to form a fluorescent layer, respectively. The phosphor emits light from the plasma by the discharge between the upper and lower plates. However, since the upper and lower electrode structures have a very low discharge efficiency, high heat is generated and thus practicality is low as a backlight (Korean Patent Laid-Open No. 2002-12096).

전계방출형 백라이트의 경우 대면적화, 고휘도화 및 저소비전력화등 그 특성은 우수하나, 마이크로팁 제조시 반도체 물질의 증착 및 에칭등과 같은 복잡한 공정을 반복하기 때문에 발생하는 높은 제조원가로 인해 아직 실용화 되지 못하고 있다. 뿐만아니라 대부분의 전계방출형은 전계방출디스플레이(FED) 분야로 개발되어지고 있지 실질적인 백라이트로는 개발이 이루어지고 있지 않다. 한편 전계방출 디스플레이의 전자방출원으로 마이크로팁을 사용하지 않고 탄소나노튜브를 이용한 전계방출형 디스플레이에 대한 특허가 다수 출원되어지고 있다.(한국공개특허 특2000-71281, 특1998-24794, 특2000-23347, 특2001-2786, 일본공개특허 특개2000-86216, 특개2000-203821)Field emission backlights have excellent characteristics such as large area, high brightness, and low power consumption, but they have not been put to practical use due to the high manufacturing costs generated by repeating complex processes such as deposition and etching of semiconductor materials during microtip manufacturing. have. In addition, most of the field emission types are being developed in the field emission display (FED) field, but the actual backlight is not developed. On the other hand, a number of patents have been applied for the field emission display using carbon nanotubes without using a micro tip as the electron emission source of the field emission display. (Korean Patent Laid-Open No. 2000-71281, Special 1998-24794, Special 2000 -23347, Japanese Patent Laid-Open No. 2001-2786, Japanese Patent Laid-Open No. 2000-86216, Japanese Patent Laid-Open No. 2000-203821)

본 발명은 전계방출디스플레이 기술을 이용하여 전자방출원으로 탄소나노튜브를 사용하여 전계방출형 백라이트를 제공하는데 있다. 그러나 상기의 탄소나노튜브를 이용한 전계방출 디스플레이 특허에 있어서 탄소나노튜브 에미터 제조방법으로는 금속, 유기고분자 및 나노튜브로 이루어진 페이스트를 프린트한후 에칭공정을 통해 나노튜브가 돌출되게 하는 방법, 나노튜브를 유기용제에 분산시켜 도전판위에서 유기용제를 증발시켜 나노튜브 막을 형성시키는 방법, 나노튜브를 대전제와 함께 용매에 분산시켜 전기영동법에 의해 에미터를 형성시키는 방법 등이 있다. 그러나 이와 같은 방법으로 제조된 나노튜브 에미터는 전자방출에 유효한 나노튜브의 갯수분포가 불량하고, 특히 전극기판과 나노튜브와의 접착력이 불량하기 때문에 균일한 휘도의 발광을 일으킬수 없고 장시간 사용할수 없게 된다.The present invention provides a field emission type backlight using carbon nanotubes as an electron emission source using a field emission display technology. However, in the field emission display patent using carbon nanotubes, a method of manufacturing a carbon nanotube emitter is a method of protruding nanotubes through an etching process after printing a paste made of metal, organic polymer and nanotubes, nano A method of dispersing a tube in an organic solvent to evaporate an organic solvent on a conductive plate to form a nanotube film, and a method of forming an emitter by electrophoresis by dispersing a nanotube in a solvent together with a charging agent. However, nanotube emitters manufactured in this way have poor number distribution of nanotubes, which are effective for electron emission, and in particular have poor adhesion between electrode substrates and nanotubes. do.

본 발명에서는 이러한 문제점을 해결하기 위해서 전극기판과의 접착성이 우수하고 고밀도로 배열된 탄소나노튜브막을 형성하여 균일한 휘도를 발휘할수 있고, 장시간 사용가능한 백라이트를 제조하는데 있다. 본 발명의 또 다른 목적은 탄소나노튜브를 이용함으로써, 기존의 백라이트보다 단순한 구성으로 인하여 생산비와 소비 전력을 감소시키는 제조 방법을 제공하는데 있다.In the present invention, in order to solve such a problem, it is possible to form a carbon nanotube film which is excellent in adhesion with an electrode substrate and is arranged at a high density to exhibit uniform luminance and to manufacture a backlight that can be used for a long time. Still another object of the present invention is to provide a manufacturing method that reduces the production cost and power consumption by using a carbon nanotube, due to a simpler configuration than a conventional backlight.

제 1도는 본 발명의 실시 양태를 도시한 단면도이다.1 is a cross-sectional view showing an embodiment of the present invention.

제 2도는 제1도의 전자방출원인 음극의 단면도를 확대한 것이다.2 is an enlarged cross-sectional view of the cathode serving as the electron emission source of FIG.

제 3도는 종래의 액정표시장치에 사용된 백라이트 단면도이다.3 is a cross-sectional view of a backlight used in a conventional liquid crystal display.

** 도면의 주요 부분에 대한 부호의 설명 **** Description of symbols for the main parts of the drawing **

1 : 상부 기판 2 : ITO (Indium tin oxide)층1: upper substrate 2: indium tin oxide (ITO) layer

3 : 형광체층 4 : 미세금속입자3: phosphor layer 4: fine metal particles

5 : 스페이서 6 : 박막도전층5 spacer 6 thin film conductive layer

7 : 하부 기판 8 : 진공배기 유리관7: lower substrate 8: vacuum exhaust glass tube

9 : 금속박막층 10 : 탄소나노튜브9 metal thin film layer 10 carbon nanotube

A : 액정 표시 장치 B : 프리즘판A: liquid crystal display B: prism plate

C : 확산판 D : 도광판C: diffuser plate D: light guide plate

E : 반사판 F : 냉음극 형광관E: reflector F: cold cathode fluorescent tube

본 발명에서는 위와 같은 문제점을 해결하기 위해 양극으로 사용되는 상부기판은 ITO(Indium tin oxide)층(2)이 도포되어 있고, ITO층 위에 형광체층(3)이 도포되어 있으며, 음극으로 사용되는 하부기판의 상측면에는 박막도전층(6)이 도포되어 있고, 박막도전층 위에 전기도금법 또는 스퍼터링법에 의해 입자크기가 0.001 ~ 1㎛이고 층두께가 0.01 ~ 10㎛인 금속박막(9)을 형성하고, 금속박막층(9) 위에 대전제로 처리된 탄소나노튜브를 전기영동법으로 층두께가 0.01 ~ 10㎛가 되게 탄소나노튜브층(10)을 형성시키고, 그위에 전극기판과 탄소나노튜브와의 접착성을 향상시키기 위해 전기도금법으로 생성된 미세금속입자로 탄소나노튜브 사이사이의 빈공간이 채워져 있다. 상부기판과 하부기판 사이에는 스페이서(5)가 설치되어 있고, 그 내부에는 방전용가스 또는 진공으로 되어 있는 평판형 발광장치를 제작하였다.In the present invention, the upper substrate used as the anode to solve the above problems is coated with an indium tin oxide (ITO) layer (2), the phosphor layer (3) is applied on the ITO layer, the lower portion used as a cathode A thin film conductive layer 6 is coated on the upper side of the substrate, and a metal thin film 9 having a particle size of 0.001 to 1 μm and a layer thickness of 0.01 to 10 μm is formed on the thin film conductive layer by electroplating or sputtering. On the metal thin film layer 9, carbon nanotubes treated with a charging agent are formed on the metal thin film layer 9 by electrophoresis to form a carbon nanotube layer 10 so as to have a layer thickness of 0.01 to 10 μm, and adhesion between the electrode substrate and the carbon nanotubes thereon. In order to improve the properties, the empty metal between carbon nanotubes is filled with micrometallic particles produced by electroplating. A spacer 5 is provided between the upper substrate and the lower substrate, and a flat light emitting device is formed therein, which is discharge gas or vacuum.

음극 및 양극의 지지체로 사용되는 절연성 기판은 유리, 플라스틱 필름 및 시트, 실리콘 웨이퍼(Wafer)중 선택된 1종으로 되어 있으며, 음극위에는 두께가 0.1㎚ ~ 1㎛ 인 Au, Pt, Al, Cu, Co, Ag로부터 선택된 금속 또는 ITO(Indium Tin Oxide)와 같은 금속산화물로 이루어진 박막도전층(6)이 도포되어 있고, 박막도전층(6) 위에 설치되어 있는 금속박막층(9)은 Ag, Cu, Ni, Zn, Au, Co, Al로부터 선택된 1종으로 전기도금법에 의해 0.5 ~ 10볼트(V)로 10초 ~ 10분간 도금하여 얻을수 있었다.The insulating substrate used as a support for the cathode and the anode is one selected from glass, plastic film and sheet, and silicon wafer, and on the cathode, Au, Pt, Al, Cu, Co having a thickness of 0.1 nm to 1 μm. And a thin film conductive layer 6 made of a metal selected from Ag, or a metal oxide such as ITO (Indium Tin Oxide) is applied, and the metal thin film layer 9 provided on the thin film conductive layer 6 is made of Ag, Cu, Ni. , Zn, Au, Co, Al was selected from 10 to 10 minutes by plating at 0.5-10 volts (V) by electroplating.

금속박막층(9) 위에는 직경(d)이 1 ~ 100㎚이고, 길이(L)가 0.01 ~ 20 ㎛이고, 길이(L)와 직경(d)의 비인 L/d가 5 ~ 20000인 단층(single-wall)탄소나노튜브 또는다층(multi-wall)탄소나노튜브가 103~ 1010개/㎣ 의 밀도로 설치되어 있고, 탄소나노튜브층(10) 위에는 전극기판과 탄소나노튜브와의 접착성을 향상시키기 위해 Ag, Cu, Ni, Zn, Au, Co, Al로부터 선택된 1종의 금속을 이용하여 전기도금법으로 2 ~ 8볼트에서 1 ~ 10 초간 도금을 한후 추가로 0.5 ~ 3볼트로 1 ~ 5분간 전기도금을 하여 입자크기가 0.001 ~ 0.5㎛의 미세금속입자(4)가 생성되어 탄소나노튜브 사이사이의 빈공간이 채워져 있는 평판형 발광장치를 제작하였다.On the metal thin film layer 9, the diameter d is 1-100 nm, the length L is 0.01-20 micrometers, and L / d which is the ratio of the length L and the diameter d is 5-200000, The single layer -Wall carbon nanotubes or multi-wall carbon nanotubes are installed at a density of 10 3 to 10 10 / ㎣, and the adhesion between the electrode substrate and the carbon nanotubes on the carbon nanotube layer 10 In order to improve the performance, plating is performed for 1 to 10 seconds at 2 to 8 volts by electroplating using one kind of metal selected from Ag, Cu, Ni, Zn, Au, Co, and Al, and then additionally 0.5 to 3 volts. Electroplating for 5 minutes to produce a fine metal particles (4) having a particle size of 0.001 ~ 0.5㎛ to prepare a flat panel light emitting device filled with the empty space between the carbon nanotubes.

본 발명을 도면과 함께 자세히 설명하면 탄소나노튜브는 도면1에서 양극 및 음극용 기판(1,7)은 유리, 플라스틱 필름 및 시트, 실리콘웨이퍼등 다양한 소재를 사용할수 있으며, 특히 모양 변경이 가능한 유연성 평면 조명장치에 적합한 플라스틱 기판으로서는 폴리에스테르, 폴리카보네이트, 폴리이미드, 폴리메틸메타아크릴레이트, 폴리아미드등을 사용할 수 있다.Referring to the present invention in detail with the drawings, the carbon nanotubes in Figure 1 for the anode and cathode substrates (1,7) can be used a variety of materials, such as glass, plastic film and sheet, silicon wafer, in particular the flexibility to change the shape Polyester, polycarbonate, polyimide, polymethyl methacrylate, polyamide, etc. can be used as a plastic substrate suitable for a planar lighting apparatus.

음극으로 사용되는 하부기판의 상측면에는 박막도전층(6)이 도포되어 있고, 박막도전층 위에는 전기영동법으로 탄소나노튜브가 쉽게 불을수 있고, 뿐만아니라 탄소나노튜브가 수직으로 배열될수 있도록 전기도금법 및 스퍼터링법에 의해 입자크기가 0.001 ~ 1㎛이고, 층두께가 0.01 ~ 10㎛인 금속박막(9)을 형성하였다. 바람직하게는 입자크기가 0.01 ~ 0.5㎛이고, 층두께가 0.05 ~ 1㎛일때가 양호하였다.The thin film conductive layer 6 is coated on the upper side of the lower substrate used as the cathode, and the carbon nanotubes can be easily blown by electrophoresis on the thin film conductive layer, and the carbon nanotubes can be arranged vertically. By the plating method and the sputtering method, a metal thin film 9 having a particle size of 0.001 to 1 µm and a layer thickness of 0.01 to 10 µm was formed. Preferably, the particle size is 0.01 to 0.5 µm and the layer thickness is 0.05 to 1 µm.

금속박막층(9) 위에는 실질적으로 전자방출원으로 사용되는 탄소나노튜브가 성치되어 있으며, 탄소나노튜브는 아크방전을 이용하여 제조되고, 질산과 황산이 혼합된 산화제에서 8시간이상 산화시켜 직경(d)이 1 ~ 100㎚이고, 길이(L)가 0.01 ~ 20 ㎛이고, 길이(L)와 직경(d)의 비인 L/d가 5 ~ 20000이 되게한 후, 일반적인 대전제로 처리하여 전기영동법으로 층두께가 0.01 ~ 10㎛가 되게 탄소나노튜브층(10)을 형성시켰다. 좀 더 바람직하게는 탄소나노튜브의 직경(d)이 10 ~ 50㎚이고, 길이(L)가 0.1 ~ 5㎛이고, 길이(L)와 직경(d)의 비인 L/d가 2 ~ 500일때 더욱 더 전자방출 능력이 우수하였다.On the metal thin film layer 9, carbon nanotubes, which are substantially used as electron emission sources, are formed, and carbon nanotubes are manufactured by arc discharge, and are oxidized in an oxidizing agent mixed with nitric acid and sulfuric acid for at least 8 hours in diameter (d ) Is 1 to 100 nm, the length (L) is 0.01 to 20 μm, and L / d, which is the ratio of the length (L) to the diameter (d), is 5 to 20,000, followed by electrophoresis by treatment with a general charging agent. The carbon nanotube layer 10 was formed to have a layer thickness of 0.01 to 10 μm. More preferably, when the diameter (d) of the carbon nanotubes is 10 to 50nm, the length (L) is 0.1 to 5㎛, L / d is a ratio of the length (L) and diameter (d) is 2 to 500 The electron emission ability was more excellent.

탄소나노튜브층(10)위에 전극기판과 탄소나노튜브와의 접착성을 향상시키기 위해 Ag, Cu, Ni, Zn, Au, Co, Al로부터 선택된 1종의 금속을 이용하여 전기도금법으로 2 ~ 8볼트에서 1 ~ 10 초간 도금을 한후 추가로 0.5 ~ 3볼트로 1 ~ 5분간 전기도금을 하여 입자크기가 0.001 ~ 0.5㎛의 미세금속입자(4)로 탄소나노튜브 사이사이의 빈 공간이 채워져 있게 하였다. 전극기판과 탄소나노튜브와의 접착성이 불량할 경우 전자방출시 과부하에 의해 전자방출원으로써 충분한 수명을 발휘할수 없다.In order to improve the adhesion between the electrode substrate and the carbon nanotubes on the carbon nanotube layer 10, 2 to 8 by electroplating using one metal selected from Ag, Cu, Ni, Zn, Au, Co, Al After plating for 1 to 10 seconds on the bolt, electroplating for 1 to 5 minutes with additional 0.5 to 3 volts to fill the empty space between the carbon nanotubes with fine metal particles (4) having a particle size of 0.001 to 0.5㎛. It was. If the adhesion between the electrode substrate and the carbon nanotubes is poor, it may not be able to exert a sufficient lifetime as an electron emission source due to overload during electron emission.

음극기판 위에 설치된 전자방출에 유효한 나노튜브의 밀도는 103내지 1010개/㎣일 경우 발광시 조도편차가 없이 충분한 발광효과를 발휘할 수 있었으며, 좋게는 103내지 107개/㎣ 일때 더욱 양호한 발광특성을 나타내었다. 나노튜브의 밀도는 103개/㎣ 미만일 경우는 충분한 발광을 나타내지 못해 조명으로써 사용할 수 없었으며, 1010개/㎣를 초과해서는 실질적으로 제조할 수 없었다.The density of the nanotubes effective for electron emission on the negative electrode substrate was 10 3 to 10 10 / ㎣, which showed sufficient luminescent effect without any illuminance deviation during luminescence, and better at 10 3 to 10 7 / ㎣. Luminescent properties were shown. When the density of the nanotubes was less than 10 3 / m 3, they did not show sufficient light emission and thus could not be used as illumination, and more than 10 10 / m 2 could not be produced substantially.

[ 발명의 실시 형태 ]Embodiment of the Invention

본 발명의 실시의 형태의 예를 도면 1을 참조하여 설명한다.An example of embodiment of this invention is demonstrated with reference to FIG.

이 전자방출원으로 탄소나노튜브를 이용하는 백라이트는 전자를 방출시킬수 있는 양극(1,2,3)과 음극(4,6,7,9,10)으로 구성되어 스페이서(Spacer)(5)를 사이에 두고 일정한 간격으로 대면하고 있으며, 그 양쪽 기판 사이에는 전자가 방출될수 있게 진공 또는 불활성가스로 채워져 있다. 음극으로는 절연성 소재인 유리, 플라스틱 필름 및 시트, 실리콘 웨이퍼(Wafer)등의 기판(2) 위에 ITO로 이루어진 박막도전층(5)이 있으며, 그 위에 1.5V에서 2분간 전기도금하여 형성된 평균입자크기가 0.05 ~ 0.3㎛이고, 층두께가 0.3㎛인 Ag(Silver)로 된 금속박막층(9)이 있고, 그위에 실질적으로 전자를 방출시키는 탄소나노튜브(10)가 50V에서 1분간 전기영동을 하여 2㎛ 두께로 설치되어 있다. 그리고 금속박막층(9)과 탄소나노튜브와의 접착력을 향상시키기 위하여 Ag를 이용하여 전기도금법으로 4V에서 3초간 도금후 1.2V에서 2분간 전기도금을 하여 입자크기가 0.01 ~ 0.1㎛인 미세금속입자(4)로 탄소나노튜브 사이사이의 빈공간이 채워져 있게 하였다. 이때 전자방출원으로 사용된 나노튜브는 직경이 15 내지 50㎚이고, 길이 분포가 0.35 내지 1.5㎛ 인 다층 카본나노튜브로 나노튜브의 길이(L)와 직경(d)의 비인 L/d가 7 내지 100 이었다. 그리고 음극기판위에 설치된 전자방출에 유효한 나노튜브 밀도는 105내지 107개/㎣가되게 제어하였다.The backlight using carbon nanotubes as the electron emission source is composed of anodes (1,2,3) and cathodes (4,6,7,9,10) capable of emitting electrons, and interposed between spacers (5). They face each other at regular intervals, and are filled with vacuum or inert gas so that electrons can be released between the substrates. The cathode includes a thin film conductive layer 5 made of ITO on an insulating material such as glass, plastic film and sheet, and a silicon wafer, and an average particle formed by electroplating at 1.5V for 2 minutes. There is a metal thin film layer 9 made of Ag (Silver) having a size of 0.05 to 0.3 µm and a layer thickness of 0.3 µm, and carbon nanotubes 10 substantially emitting electrons thereon are subjected to electrophoresis at 50 V for 1 minute. 2 μm thick. In order to improve the adhesion between the metal thin film layer 9 and the carbon nanotubes, using Ag, electroplating for 3 seconds at 4V followed by electroplating at 1.2V for 2 minutes, the fine metal particles having a particle size of 0.01 ~ 0.1㎛ (4) filled the voids between the carbon nanotubes. In this case, the nanotubes used as the electron emission source are multilayer carbon nanotubes having a diameter of 15 to 50 nm and a length distribution of 0.35 to 1.5 μm, and L / d having a ratio of the length (L) and the diameter (d) of the nanotubes is 7 To 100. And the effective nanotube density for electron emission installed on the negative electrode substrate was controlled to 10 5 to 10 7 / ㎣.

한편 실질적인 빛을 발휘하는 양극으로는 ITO(Indium Tin Oxide)와 같은 투명도전층(2)이 도포되어 있는 유리 및 플라스틱 기판(1)위에 통상 사용되는 형광층(3)을 설치하여 사용하였다.On the other hand, as the anode which exhibits substantial light, a fluorescent layer 3 commonly used on glass and plastic substrate 1 to which a transparent conductive layer 2 such as indium tin oxide (ITO) is applied was used.

이상과 같이 본 발명에 의하면, 탄소나노튜브를 평면상에 배치하여 균일한 빛을 직접 발산하므로 기존의 백라이트에서 사용되는 다수의 부품, 즉 광원, 도광판, 광확산판, 프리즘판, 반사판 등을 사용하지 않아 제조 공정의 단순화를 가져오고 이로 인한 생산비의 감소는 커다란 공업적 효과를 가져온다. 또한 복잡하지 않은 구성으로 인해 빛의 광투과율이 크게 향상되고 상대적으로 고휘도를 얻을 수 있다.As described above, according to the present invention, since the carbon nanotubes are disposed on a plane and directly emit uniform light, a plurality of components used in a conventional backlight, that is, a light source, a light guide plate, a light diffuser plate, a prism plate, and a reflector, are used. This leads to a simplification of the manufacturing process and the resulting reduction in production costs has a great industrial effect. In addition, due to the uncomplicated configuration, the light transmittance of the light can be greatly improved and a relatively high luminance can be obtained.

Claims (5)

양극으로 사용되는 상부기판은 ITO(Indium tin oxide)층(2)이 도포되어 있고, ITO층 위에 형광체층(3)이 도포되어 있으며, 음극으로 사용되는 하부기판의 상측면에는 박막도전층(6)이 도포되어 있고, 박막도전층(6) 위에 전기도금법 또는 스퍼터링법에 의해 입자크기가 0.001 ~ 1㎛이고, 층두께가 0.01 ~ 10㎛인 금속박막층(9)을 형성하고, 금속박막층(9) 위에 대전제로 처리된 탄소나노튜브를 전기영동법으로 층두께가 0.01 ~ 10㎛가 되게 탄소나노튜브층(10)을 형성시키고, 그위에 전극기판과 탄소나노튜브와의 접착성을 향상시키기 위해 전기도금법으로 생성된 미세금속입자(4)로 탄소나노튜브 사이사이의 빈공간이 채워져 있으며, 상부기판과 하부기판 사이에는 스페이서(5)가 설치되어 있고, 그 내부에는 진공으로 되어 있는 것을 특징으로 하는 평판형 액정표시장치용 백라이트.The upper substrate used as the anode is coated with an indium tin oxide (ITO) layer 2, the phosphor layer 3 is coated on the ITO layer, and the thin film conductive layer 6 is disposed on the upper side of the lower substrate used as the cathode. ) Is coated on the thin film conductive layer 6 to form a metal thin film layer 9 having a particle size of 0.001 to 1 µm and a layer thickness of 0.01 to 10 µm by electroplating or sputtering. ) To form a carbon nanotube layer 10 so as to have a layer thickness of 0.01 to 10 μm by electrophoresis on the carbon nanotubes treated with a charging agent, and to improve adhesion between the electrode substrate and the carbon nanotubes. The micro metal particles (4) produced by the plating method is filled with a void space between the carbon nanotubes, the spacer 5 is provided between the upper substrate and the lower substrate, characterized in that the vacuum inside For flat panel liquid crystal display Backlight. 1항에 있어서, 탄소나노튜브는 단층(single-wall)나노튜브 또는 다층(multi-wall)나노튜브이고, 직경(d)이 1 내지 100㎚이고, 길이(L)가 0.01 내지 20 ㎛이고, 나노튜브의 길이(L)와 직경(d)의 비인 L/d가 5 내지 20000인 나노튜브가 103~ 1010개/㎣ 의 밀도로 설치되어 있는 것을 특징으로 하는 평판형 액정표시장치용 백라이트.The method of claim 1, wherein the carbon nanotubes are single-wall nanotubes or multi-wall nanotubes, have a diameter d of 1 to 100 nm, a length L of 0.01 to 20 m, a backlight for a flat panel type liquid crystal display apparatus characterized in that the ratio L / d of the length of the nanotube (L) and diameter (d) of 5 to 20,000 nanotubes is installed at a density of 10 3 to 10 10 / ㎣ . 1항에 있어서, 하부기판의 금속박막층(9)은 Ag, Cu, Ni, Zn, Au, Co, Al로부터 선택된 1종으로 전기도금법에 의해 0.5 ~ 10볼트(V)로 10초 ~ 10분간 도금형성된 것을 특징으로 하는 평판형 액정표시장치용 백라이트.The metal thin film layer 9 of the lower substrate is plated at 10 to 10 minutes at 0.5 to 10 volts (V) by electroplating with one selected from Ag, Cu, Ni, Zn, Au, Co and Al. A backlight for a flat panel liquid crystal display, characterized in that formed. 1항에 있어서, 하부기판의 전극기판과 탄소나노튜브와의 접착력을 향상을 위한 미세금속입자층(4)은 Ag, Cu, Ni, Zn, Au, Co, Al로부터 선택된 1종의 금속을 이용하여 전기도금법으로 2 ~ 8볼트에서 1 ~ 10 초간 도금을 한후 추가로 0.5 ~ 3볼트로 1 ~ 5분간 전기도금을 하여 입자크기가 0.001 ~ 0.5㎛의 크기로 생성되어 탄소나노튜브 사이사이의 빈공간이 채워져 있는 평판형 액정표시장치용 백라이트.The method of claim 1, wherein the fine metal particle layer 4 for improving the adhesion between the electrode substrate and the carbon nanotubes of the lower substrate is used by using a metal selected from Ag, Cu, Ni, Zn, Au, Co, Al Electroplating is performed for 2 to 8 volts for 1 to 10 seconds, followed by an additional 1 to 5 minutes of electroplating at 0.5 to 3 volts to create a particle size of 0.001 to 0.5㎛ and thus the void space between the carbon nanotubes. Filled backlight for flat panel liquid crystal displays. 1항에 있어서, 하부기판의 박막도전층(6)은 금, 알루미늄, 인듐틴옥사이드(ITO), 백금, 구리와 같은 도전체이고, 금속박막층의 두께가 0.1㎚ -1㎛ 인 것을 특징으로 하는 평판형 액정표시장치용 백라이트.The thin film conductive layer 6 of the lower substrate is a conductor such as gold, aluminum, indium tin oxide (ITO), platinum, copper, and the thickness of the metal thin film layer is 0.1nm -1㎛. Backlight for flat panel liquid crystal display.
KR1020020020043A 2002-04-12 2002-04-12 Backlight for Liquid Crystal Displays KR100842934B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020020020043A KR100842934B1 (en) 2002-04-12 2002-04-12 Backlight for Liquid Crystal Displays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020020043A KR100842934B1 (en) 2002-04-12 2002-04-12 Backlight for Liquid Crystal Displays

Publications (2)

Publication Number Publication Date
KR20030081695A true KR20030081695A (en) 2003-10-22
KR100842934B1 KR100842934B1 (en) 2008-07-02

Family

ID=32378784

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020020043A KR100842934B1 (en) 2002-04-12 2002-04-12 Backlight for Liquid Crystal Displays

Country Status (1)

Country Link
KR (1) KR100842934B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020033949A (en) * 2000-10-31 2002-05-08 한형수 Flat type lighting device using the nanotubes
KR100638615B1 (en) * 2004-09-14 2006-10-26 삼성전기주식회사 Fabrication method of field emitter electrode
KR20070005147A (en) * 2005-07-05 2007-01-10 삼성에스디아이 주식회사 Electron emission source comprising carbon-based material and metal nanorod, electron emission device comprising the same, an composition for preparing the electron emission source
CN101566760B (en) * 2008-04-23 2010-09-29 清华大学 Liquid crystal display

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100365444B1 (en) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 Vacuum micro device and image display device using the same
KR20010039636A (en) * 1999-06-15 2001-05-15 이철진 Apparatus of white light source using carbon nanotubes and fabrication Method thereof
KR20010039637A (en) * 1999-06-18 2001-05-15 이철진 Method of fabricating white light source using carbon nanotubes
KR100366704B1 (en) * 2000-04-27 2003-01-09 삼성에스디아이 주식회사 Liquid crystal display device
KR100474171B1 (en) * 2000-10-31 2005-03-07 주식회사 새 한 Backlight for liquid crystal display

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020033949A (en) * 2000-10-31 2002-05-08 한형수 Flat type lighting device using the nanotubes
KR100638615B1 (en) * 2004-09-14 2006-10-26 삼성전기주식회사 Fabrication method of field emitter electrode
KR20070005147A (en) * 2005-07-05 2007-01-10 삼성에스디아이 주식회사 Electron emission source comprising carbon-based material and metal nanorod, electron emission device comprising the same, an composition for preparing the electron emission source
CN101566760B (en) * 2008-04-23 2010-09-29 清华大学 Liquid crystal display

Also Published As

Publication number Publication date
KR100842934B1 (en) 2008-07-02

Similar Documents

Publication Publication Date Title
KR101320826B1 (en) Backlight for liquid crystal display device
US6426590B1 (en) Planar color lamp with nanotube emitters and method for fabricating
US20050174028A1 (en) Field emission device and backlight device using the field emission device and method of manufacture thereof
CN1637511A (en) Field emission backlight unit, method of driving the backlight unit, and method of manufacturing lower panel
US7230373B2 (en) Field emission type backlight device
CN100411084C (en) Anode substrate containing panel display equipment with conducting shell made of carbonyl material
US6646282B1 (en) Field emission display device
KR100554023B1 (en) Field emission device and manufacturing thereof
US6815877B2 (en) Field emission display device with gradient distribution of electrical resistivity
US6825607B2 (en) Field emission display device
KR100656781B1 (en) Method for forming electron emitter tip by copper-carbon nanotube composite electroplating
US6750617B2 (en) Field emission display device
KR100842936B1 (en) Manufacturing method of the backlight for liquid Crystal Displays
US7701127B2 (en) Field emission backlight unit
KR100842934B1 (en) Backlight for Liquid Crystal Displays
US6750616B2 (en) Field emission display device
US7750550B2 (en) Surface light source device having an electron emitter and liquid crystal display having the same
US20060138935A1 (en) Field emission lamp and backlight module using same
KR100623097B1 (en) Field emission device having triode structure with dual emitters
JP2008053172A (en) Surface light emitting device
KR100917466B1 (en) Field emission surface light source apparatus and method for fabricating the same
JP2008305792A (en) Field emission device, its manufacturing method, and device using it
US20070096630A1 (en) Field emission backlight unit and its method of operation
KR101786080B1 (en) Backlight Unit Using Quantum Dot and CNT Field Emission Device and Method of Manufacture Thereof, and Liquid Crystal Display Using The Same
CN1797689A (en) Field emission light source and backlight module of using the light source

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110621

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee