KR20030077633A - Topologically tailored sputtering targets - Google Patents

Abstract

In a standard target configuration, mainly sputtered atoms are not collimated and more sputtered atoms flow in the center region of the wafer 220 than at the edge of the wafer, so that the sputtered atoms are distributed at a wide angle to form a non-uniform film and a bad step. Cause coverage. The sputtering target 210 described herein is shaped so that the sputtered atoms directly impinge toward the wafer with a narrow cosine distribution. Effectively, the target is designed to have a built-in collimator. Preferred shapes may be performed by micro 250 (eg parabolic dimple) and / or macroscale (eg wafer shape, circular wave shape) modulation of the target shape. Atoms / ions move along path 230 from surface material 260 bonded to core material 270.

Description

Shaped Sputtering Targets {TOPOLOGICALLY TAILORED SPUTTERING TARGETS}

The use of electronic and semiconductor devices has increased the number of consumers and commercial electronics, telecommunications and data exchange products. Examples of such consumer and commercial products are televisions, computers, cell phones, pagers, palm-type organizers, portable radios, car stereos, or remote control devices. As the demand for such consumer and commercial electronic products increases, there is a need for smaller, more portable products for consumers and businesses.

As a result of the reduction in the size of these products, the parts comprising these products should be smaller or thinner. Examples of these components that need to be reduced in size include microelectronic chip interconnects, semiconductor chip elements, resistors, capacitors, printed circuits or wiring boards, wiring, keyboards, touch pads, and chip packaging.

As the size of electronic and semiconductor parts decreases, certain defects present in larger parts will magnify in the reduced sized parts. Therefore, defects that may or may be present in larger parts should be identified and corrected if possible before the parts are reduced to smaller electronics.

In order to identify and correct defects in electronic components, semiconductor components, and communication components, the components, materials used, and the manufacturing process for manufacturing these components must be analyzed in detail. Electronic components, semiconductor components and communication / data exchange components each consist of a layer of material such as a metal, metal alloy, ceramic, inorganic material, polymer, or organometallic material. The material layer is often a thin film (thickness orders of tens of angstroms or less). In order to improve the quality of the material layer, methods of forming the layer, such as physical vapor deposition of metals or other compounds, should be evaluated and possibly improved.

In conventional physical vapor deposition (PVD), a sample or target is charged with an energy source such as a plasma, laser or ion beam until atoms are released into the ambient atmosphere. Atoms released from the sputtering target migrate toward the substrate (generally a silicon wafer) surface and coat the surface forming a thin film or layer of material. Standard PVD target configurations tend to form "central thick" and "thin film edge" deposits due to the cosine distribution of sputtered atoms (FIG. 1 and US 5,302,266; US 5,225,393; US 4,026,787; and US 3,884,787). Prior art FIG. 1 shows a conventional PVD device comprising a sputtering target 10 and a wafer or substrate 20. Atoms are released from the sputtering target 10 and travel in the ion / atomic path 30 toward the wafer or substrate 20, where these atoms are deposited in layers.

Various methods and apparatus have been proposed for modifying the cosine distribution of sputtered atoms to deposit more uniform metal films. One useful method is to physically position or mount a separate collimator or similar shaped opening between the target and the surface of the wafer or substrate (see prior art FIGS. 2 and US 5,409,587; see US 4,923,585). It is designed to reduce the number of metal atoms colliding with the wafer and to move metal atoms moving at smaller angles to deposit on the substrate or wafer, reducing accumulation on top of the contacts and vias, and reducing the sidewalls of the contacts or vias and Increase the percentage of atoms that accumulate on the floor. Prior art FIG. 2 illustrates a conventional PVD device that includes a sputtering target 110, a wafer or substrate 120, and a separate collimator 140. Atoms are released from the sputtering target 110 and travel in the ion / atomic path 130 towards the wafer or substrate 120, where the atoms are screened by the collimator 140. Atoms passing through the collimator 140 are deposited in layers on the wafer or substrate 120.

However, by adding a collimator to the target / substrate assembly, atoms moving at greater angles are deposited in the collimator instead of the wafer, which significantly increases the cost of the target material and also reduces the target life as it is consumed in the process. In addition, the addition of collimators requires larger target-to-wafer space in standard (no collimator) processes to accommodate collimators and to prevent collimator-shaped pattern formation on the wafer. Moreover, drift atoms deposited on the collimator tend to block the collimator, reducing deposition efficiency and causing the formation of undesirable particulates when the deposits peel off from the collimator surface.

Another approach attempted to form more uniform deposits is to ionize sputtered atoms by applying high frequency (RF) power to the plasma (see Ionized Metal Plasma (IMP) Process, US Pat. No. 6,296,743). In this process, the surface exposed to the RF plasma develops a negative potential for the plasma due to the high mobility of the electrons relative to the heavy ions. Therefore, metal ions are attracted to the wafer surface by direct current (DC) self biasing without pedestal or surface biasing. These vertically moving metal ions generally collide with the bottom of the contact or via and improve bottom and sidewall coverage. However, RF plasma apparatus and operating conditions substantially increase system cost and complicate operation. RF plasma configurations have been combined with magnets to control the path of atoms moving towards the substrate or wafer, but these methods are expensive and difficult to align and monitor (US 6,153,061; US 6,326,627; US 6,117,281; US 5,865,969; US 5,766,426; US). 5,417,833; US 5,188,717; US 5,135,819; US 5,126,029; US 5,106,821; US 4,500,409; US 4,414,086; US 4,610,770; and US 4,629,548).

Other methods have been developed to improve the sputtering process to form more uniform films. For example, Honeywell Electronic Materials (HEM) demonstrates that the sputtering properties of a target can be substantially improved by using an ultrafine particle size target, the ultrafine particle size target being a patented Equal- Manufactured by a channel Angular Extrusion (ECAE registered) process (5,590,389; 5,780,755; and 5,809,393). Advantages thereby include low arcing, long target life, high device yield, good film uniformity, and low particle generation. Honeywell Electronic Materials (registered trademark) demonstrated that the crystallographic organization of the target can be modified in a pattern-unformed manner to provide collimating advantages (see US 5,993,621 and US 6,302,977). Self-ionizing plasma (SIP) is also considered a sputtering process that can produce a more uniform film. The process utilizes low pressure and high power to promote self-ionization of sputtered target atoms. SIP requires extended target to substrate space, creating a long ion path. Long ion paths improve directionality of the ion flow but reduce target yield. Extended ion path lengths result in increased cosine loss resulting in insufficient target utilization. Additional methods include mechanically adjusting the wafer or substrate during the sputtering process (US 6,224,718); Partial masking of surfaces (US 5,894,058; US 5,942,356; 6,242,138); Chemical treatment of vapor present between the target and the surface or wafer (US 6,057,238; US 6,107,688; US 4,793,908; US 6,222,271; and US 6,194,783); And laser sputtering and atomic excitation (US 5,382,457). Processes other than the ECAE process require additional mechanical or chemical components in addition to the basic PVD process and apparatus, increasing and complicating the cost of the apparatus and process.

In the end, a) use a beneficial minimum depth device; b) maintain a relatively low overall process cost compared to conventional PVD processes; And c) It is desirable to fabricate PVD targets and target / wafer assemblies that simplify the apparatus and apparatus compared to conventional PVD processes.

The present invention relates to a sputtering target for physical vapor deposition (PVD).

1 illustrates a prior art PVD target / surface device,

2 shows a PVD target / surface device of the prior art with a separate collimator added to the device,

3 illustrates an embodiment of the present invention,

4 illustrates various embodiments of the invention,

5 illustrates a method of forming a self collimating sputtering target,

6 illustrates a method of forming a uniform film on a surface.

The aging behavior of standard targets suggests that the orientation of sputtered atoms can be controlled by modifying the target's surface morphology or topology. In a standard target structure, more sputtered atoms flow in the center region of the wafer than at the edge of the wafer, so the sputtered atoms are distributed at wide angles to form a non-uniform film.

The sputtering target described above is shaped so that the sputtered atoms collide directly towards the wafer with a narrow cosine distribution. In practice, the target is designed to have a built-in collimator. The desired shape can be performed by modifying the micro (eg parabolic dimple) and / or macro (eg target surface shape) size of the target shape.

Self-collimating sputtering targets include any shape and size that can be sputtered within the sputtering chamber as appropriate, depending on the application and the instrument used in the PVD process. The aforementioned sputtering target also includes a surface material and a core material, where the surface material is bonded to the core material. The surface material and the core material generally comprise the same elemental composition or chemical composition / component, or the elemental composition and chemical composition of the surface material may be changed or modified to be different from the core material. In addition, a backing plate may be coupled to the core material to provide additional support to the sputtering target and to provide a mounting apparatus for the sputtering target.

The surface material is the portion of the target that is exposed to the energy source at a measurable point at the appropriate time and is also the portion of the entire target material intended to form atoms that are desirable as surface coatings. The surface material is also part of a sputtering target that includes two or more intentionally formed indentations that form a collimating shape.

The self collimating sputtering target may comprise a) providing a core material; b) providing a surface material; c) bonding the core material to the surface material to form a sputtering target; And d) forming at least two intentional recesses, wherein the recesses form a collimating shape.

Uniform film or layer: a) providing its own collimating sputtering target; b) providing a surface; c) positioning said surface at a distance from said self collimating sputtering target; d) colliding an energy source with the self collimating sputtering target to form one or more atoms; And e) forming the device or on the surface of the device by coating the surface with the one or more atoms.

The sputtering targets described above can be integrated into any process or manufacturing design that produces, forms, or modifies electronic devices, semiconductor devices, and communication devices. Electronic devices, semiconductor devices, and communication devices are generally considered to include certain layered devices that can be used in electronic based, semiconductor based, or communication based products. The above-described devices include semiconductor chips, circuit boards, chip packaging, separator sheets, dielectric elements of circuit boards, printed-wiring boards, touch pads, wave guides, optical fibers, photon transfer and sound wave transfer elements, Certain materials that utilize or form a dual damascene process and other elements of a circuit board such as capacitors, inductors, and resistors.

The aging behavior of the target suggests that the direction of the sputtered atoms can be controlled by modifying the surface shape of the target. In a standard target configuration, as shown in the prior art of FIG. 1, because the sputtered atoms flow more at the center of the wafer than at the edge of the wafer, the sputtered atoms are distributed at wide angles to form a non-uniform film. The direction of the sputtered atoms can now be controlled by modifying the surface shape of the target. In particular, the surface shape of the target can be made so that sputtered atoms collide directly toward the wafer with a narrow cosine distribution as shown in FIG. 3.

3 illustrates a PVD device including a sputtering target 210 and a wafer or substrate 220. Sputtering target 210 includes surface material 260 and core material 270. Surface material 260 includes intentionally formed recesses (microdimples 250 in this case). This intentionally formed recess is also formed as a pattern on the sputtering target. As used herein, “pattern” means the formation of intentionally formed recesses that are repeated, arranged or repeated and arranged. Atoms are “prescreened” by microdimples 250 acting as “embedded collimators” in that they collide in a controlled manner at the time they are released to travel a given ion / atomic path 230. The atoms are then released from the sputtering target 210 and move toward the wafer or substrate 220 in the ion path 230. The desired shape can be performed by modifying the micro (eg parabolic dimple) and / or macro (eg target surface shape) size of the target shape. The backing plate may be coupled to the core material to provide additional support to the sputtering target and to provide a mounting apparatus for the sputtering target.

Sputtering targets have a suitable shape and size depending on the application and the instrument used in the PVD process. The sputtering target also includes a surface material 260 and a core material 270, where the surface material 260 is coupled to the core material 270. As used herein, the term "bonded" refers to physical adhesion (adhesives, interfacial materials) or binding forces such as covalent and ionic bonds of a substance or component, and van der Waals, electrostatics, coulombs, hydrogen bonds, and / or the like. Or physical and / or chemical attraction between two parts of a material or component that includes a non-binding force, such as magnetic attraction. The surface material 260 and the core material 270 generally comprise the same elemental composition or chemical composition / component, or the elemental composition and chemical composition of the surface material 260 may be changed or modified to be different from the core material 270. It may be. In most embodiments, surface material 260 and core material 270 have the same elemental composition and chemical composition. However, in embodiments where it is important to detect when the target is at the end of its useful life or to deposit a mixed layer of material, the surface material 260 and the core material 270 may be manufactured to have different elemental compositions or chemical compositions. .

Surface material 260 is a portion of target 210 that is exposed to an energy source at a measurable point at a suitable time and is also a portion of the entire target material intended to produce atoms that are desirable as surface coatings. Surface material 260 is also a portion of sputtering target 210 that includes two or more intentionally formed recesses that form a collimating shape. As used herein, “collimating shape” refers to the sputtering target 210's spherical target 210 where the cosine atomic distribution directly affects the cosine distribution of atoms in a measurably narrow manner relative to the atomic distribution found when a conventional sputtering target is used. It is part of the surface material 260. That is, there is an external factor that affects the sputtered atoms, but without the external factors such as magnets, chemical additives or masks, it is formed from a conventional sputtering target by the formation of two or more intentionally formed recesses forming a collimating shape. The cosine distribution of the atoms of can be narrowed. The difference between the cosine distribution of the conventional atom and the cosine distribution of the narrowed atom can be seen from the prior art FIGS. 1 and 3 as described above.

As mentioned above, two or more intentionally formed recesses are formed in the surface material 260 of the sputtering target 210 to form a collimating shape. Embodiments that include a fairly large recess intentionally formed include a target surface, generally referred to as "macroscale modification." "Macroscale modulation" is used to mean manufacturing the target surface in a circular wave shape to compensate for non-uniform corrosion of the target due to the rotating magnets in the magnetron sputtering system. In most embodiments the macroscale modulation 280 (shown in FIG. 4) generally comprises a fairly large and intentionally formed recess in the sputtering target 210, which is a convex or concave lens or cone. Embodiments that include two or more fairly small intentionally formed recesses include recesses generally referred to as "microdimples 250". As used herein, “microdimple” means a recess including an opening having a closed loop shape, where the shape includes a closed loop of circular, hexagonal, triangular, square, oval and other curved or straight edges, and 1 : Has an aspect ratio of 1 or more. 3 is a cross sectional view of a microdimple in a sputtering target. 4 shows a top view of microdimple 250 and macroscale modulation 280 within a sputtering target. 4 also illustrates the concept of a closed loop shape within a sputtering target that includes microdimples 250. The sputtering target may include both macroscale modulation 280 and microdimple 250. The sputtering target of FIG. 4B and the sputtering target of FIG. 4D are targets including both macroscale modulation 280 and microdimple 250.

Macroscale modulation 280 and microdimple 250 may be formed through a molding process when the target is first manufactured or manufactured by physical or mechanical processing, chemical and / or etch removal processes. The macroscale modulation 280 may be molded into the target 210 when it is etched into the target 210 after the target 210 is initially formed and the microdimple 250 is initially formed, and vice versa. It may be. More specifically, as shown in FIG. 5, the self collimating sputtering target 210 may comprise a) providing 300 a core material 270; b) providing 310 a surface material 260; c) coupling (320) the core material (270) to the surface material (260) to form a sputtering target (210); And d) forming at least two intentional recesses, wherein the recesses form a collimating shape 330.

Core material 270 is designed to provide support for surface material 260 and to provide as much additional atoms as possible in the sputtering process or information relating to the useful life of the target. For example, if the core material 270 comprises a material different from the initial surface material 260, and the quality control device detects the presence of core material atoms in the space between the target 210 and the wafer 220. The target 210 needs to be removed and refurbished or discarded because the elemental purity and chemical integrity of the metal coating can be compromised by depositing undesirable materials on existing surface / wafer layers. Core material 270 is also a portion of sputtering target 210 that does not include macroscale modulation 280 or microdimple 250. That is, the structure and shape of the core material 270 is generally uniform.

The sputtering target 210 is generally formed a) reliably in the sputtering target; b) sputtered from the target when colliding with the energy source; And c) any material that may be suitable for forming a final or precursor layer on a wafer or surface. Materials for producing suitable sputtering targets 210 include metals, metal alloys, conductive polymers, conductive composites, conductive monomers, dielectric materials, hardmask materials, and any other suitable sputtering material. As used herein, "metal" means an element in the d-block and f-block of the Periodic Table of the Elements, including elements with metallic properties such as silicon and germanium. As used herein, "d-block" means an element with electrons filling the 3d, 4d, 5d orbitals surrounding the nucleus of the element. As used herein, "f-block" refers to an element having electrons filling the 4f and 5f orbitals surrounding the nucleus of the element, including lanthanides and actinides. Preferred metals include titanium, silicon, cobalt, copper, nickel, iron, zinc, vanadium, zirconium, aluminum and aluminum based materials, tantalum, niobium, tin, chromium, platinum, palladium, gold, silver, tungsten, molybdenum, cerium, Promethium, thorium or combinations thereof. More preferred metals include copper, aluminum, tungsten, titanium, cobalt, tantalum, magnesium, lithium, silicon, manganese, iron or combinations thereof. Most preferred metals include copper, aluminum and aluminum based materials, tungsten, titanium, zirconium, cobalt, tantalum, niobium or combinations thereof. Examples of expected and preferred materials include aluminum and copper for ultrafine aluminum and copper sputtering targets; Aluminum, copper, cobalt, tantalum, zirconium, and titanium used for 300 mm sputtering targets; And aluminum for an aluminum sputtering target, which deposits a thin, highly angled aluminum "seed" layer on the surface layer. The term " and combinations thereof " refers to the presence of metallic impurities present in certain sputtering targets, such as copper sputtering targets with chromium and aluminum impurities, or to alloys, borides, carbides, fluorides, nitrides, silicides, oxides, and the like. It may also mean an intentional combination of metals and other materials that make up the sputtering target, such as the containing target.

The term "metal" also includes alloys, metal / metal composites, metal ceramic composites, metal polymer composites as well as other metal composites. Expected alloys include gold, antimony, arsenic, boron, copper, germanium, nickel, indium, palladium, phosphorus, silicon, cobalt, vanadium, iron, hafnium, titanium, iridium, zirconium, tungsten, silver, platinum, tantalum, tin , Zinc, lithium, manganese, rhenium, and / or rhodium. Specific alloys include gold antimony, gold arsenic, gold boron, gold copper, gold germanium, gold nickel, gold nickel indium, gold palladium, gold phosphorus, gold silicon, gold silver platinum, gold tantalum, gold tin, gold zinc, palladium lithium Manganese, palladium nickel, platinum palladium, palladium rhenium, platinum rhodium, silver arsenic, silver copper, silver gallium, silver gold, silver palladium, silver titanium, titanium zirconium, aluminum copper, aluminum silicon, aluminum silicon copper, aluminum titanium, Chromium Copper, Chromium Manganese Palladium, Chromium Manganese Platinum, Chromium Molybdenum, Chromium Ruthenium, Cobalt Platinum, Cobalt Zirconium Niobium, Cobalt Zirconium Rhodium, Cobalt Zirconium Tantalum, Copper Nickel, Iron Aluminum, Iron Rhodium, Iron Tantalum, Chromium Silicon Oxide, Chromium Vanadium Cobalt Chromium, Cobalt Chromium Nickel, Cobalt Chromium Platinum, Cobalt Chromium Tantalum, Cobalt Chromium Tantalum Platinum, Cobalt Iron, Cobalt Iron Boron, Cobalt Chromium, cobalt iron zirconium, cobalt nickel, cobalt nickel chromium, cobalt nickel iron, cobalt nickel hafnium, cobalt niobium hafnium, cobalt niobium iron, cobalt niobium titanium, iron tantalum chromium, manganese iridium, manganese palladium platinum, manganese platinum, manganese rhodium, Manganese ruthenium, nickel chromium, nickel chromium silicon, nickel cobalt iron, nickel iron, nickel iron chromium, nickel iron rhodium, nickel iron zirconium, nickel manganese, nickel vanadium, tungsten titanium and / or combinations thereof.

Other materials anticipated for the sputtering target 210 are considered examples of the sputtering target 210 in which the following combination is expected (but not all listed in the list below). Chromium boride, lanthanum boride, molybdenum boride, niobium boride, tantalum boride, titanium boride, tungsten boride, vanadium boride, zirconium boride, boron carbide, chromium carbide, molybdenum carbide, niobium carbide, silicon carbide Tantalum carbide, titanium carbide, tungsten carbide, vanadium carbide, zirconium carbide, aluminum fluoride, barium fluoride, calcium fluoride, cerium fluoride, cryolite, lithium fluoride, magnesium fluoride, potassium fluoride, rare earth fluoride, sodium fluoride, aluminum nitride, boron nitride Niobium nitride, silicon nitride, tantalum nitride, titanium nitride, vanadium nitride, zirconium nitride, chromium silicide, molybdenum silicide, niobium silicide, tantalum silicide, titanium silicide, tungsten silicide, vanadium silicide, zirconium silicide, aluminum oxide, antimony oxide, barium Oxide, barium titanate, bis Oxide, bismuth titanate, barium strontium titanate, chromium oxide, copper oxide, hafnium oxide, magnesium oxide, molybdenum oxide, niobium pentoxide, rare earth oxide, silicon dioxide, silicon monoxide, strontium oxide, strontium titanate, tantalum pentock Side, tin oxide, indium oxide, indium tin oxide, lanthanum aluminate, lanthanum oxide, lead titanate, lead zirconate, lead zirconate-titanate, titanium aluminide, lithium niobate, titanium oxide, tungsten oxide, Yttrium oxide, zinc oxide, zirconium oxide, bismuth telluride, cadmium selenide, cadmium telluride, lead selenide, lead sulfide, lead telluride, molybdenum selenide, molybdenum sulfide, zinc selide, zinc sulfide, zinc telluride and And / or their group It includes water.

A thin layer or thin film formed by sputtering of atoms from a target described herein can be any number, including other metal layers, substrate layers 220, dielectric layers, hardmask or etchstop layers, photolithography layers, antireflective layers, and the like. Or on layers of consistency. In certain preferred embodiments, the dielectric layer is a) granted patents US 5959157, US 5986045, US 6124421, US 6156812, US 6172128, US 6171687, US 6214746, sold and described by Honeywell International, Inc. And flares such as the compounds described in patent applications 09/197478, 09/538276, 09/544504, 09/741634, 09/651396, 09/545058, 09/587851, 09/618945, 09/619237, 09/792606 (FLARE, poly (arylene ether)), b) patent application 09/545058; PCT / US01 / 22204, filed October 17, 2001; PCT / US01 / 50182, filed December 31, 2001; 60/345374, filed December 31, 2001; 60/347195, filed January 8, 2002; And adamantane-based materials, such as those disclosed in US Pat. No. 60/350187, filed Jan. 15, 2002, c) co-assigned US Patent 5,115,082; 5,986,045; And 6,143,855; And International Patent Publication WO 01/29052, co-assigned and published on April 26, 2001; And WO 01/29141, published April 26, 2001; And d) issued patents US 6022812, US 6037275, US 6042994, US 6048804, US 6090448, US 6126733, US 6140254, US 6204202, US 6208014, and patent applications 09/046474, 09/046473, 09/111084, 09 / 360131, 09/378705, 09/234609, 09/379866, 09/141287, 09/379484, 09/392413, 09/549659, 09/488075, 09/566287, and 09/214219, all of which are herein referenced Nanoporous silica materials such as the compounds disclosed herein, and organic materials including silica-based compounds and e) Honeywell HOSP® organosiloxanes.

Wafer or substrate 220 may comprise substantially any desired solid material. Particularly preferred substrates 220 will include films, glass, ceramics, plastics, metals or coated metals, or composite materials. In a preferred embodiment, the substrate 220 is a silicon or germanium arsenide die or wafer surface, such as that found on packaging surfaces, circuit boards or package interconnect traces, such as those found on copper, silver, nickel or gold plated leadframes. Copper surfaces, via walls, or stiffener interfaces ("copper" includes consideration of bare copper or oxides thereof), polymeric packaging or substrate interfaces as found in polyimide-based flex packages, lead or other metal alloy solder ball surfaces Polymers such as glass, polyimide, and the like. In a more preferred embodiment, substrate 220 includes materials common in the packaging and circuit board industry, such as silicon, copper, glass, or polymers.

The substrate layer 220 contemplated herein also includes two or more material layers. The layer comprising the substrate layer 220 may comprise the substrate material described above. Other layers including the substrate layer 220 may include polymers, monomers, organic compounds, inorganic compounds, layers of organometallic compounds, continuous layers, and nanoporous layers.

As used herein, the term "monomer" refers to any chemical compound capable of repeatedly forming a covalent bond with itself or chemically different compounds. Repeated bond formation between monomers forms linear, branched, super branched, or three-dimensional articles. Monomers also include repeating building blocks, and polymers formed from such monomers when polymerized are referred to as “blockpolymers”. Monomers belong to various chemical molecular species, including organic, organometallic or inorganic metal molecules. The molecular weight of the monomer varies between about 40 Daltons and 20000 Daltons. However, especially when the monomer comprises repeating building blocks, the monomer has a higher molecular weight. Monomers also include additional groups such as those used for crosslinking.

As used herein, the term "crosslinking" refers to a process in which two portions of two or more molecules or long molecules are bonded to each other by chemical interaction. Such interactions occur in a variety of ways, including covalent bond formation, hydrogen bond formation, hydrophobicity, hydrophilicity, ionic or electrostatic interactions. In addition, the interaction of molecules is characterized by at least temporary physical connections between the molecule and itself or two or more molecules.

Anticipated polymers include aromatics and a wide range of functional or structural moieties including halogenated groups. Suitable polymers also have many structures, including homopolymers, and heteropolymers. Moreover, the selective polymers can take various forms such as linear, branched, super branched, or three dimensional. The expected molecular weight of the polymer is broadly in the range of 400 Daltons to 400000 Daltons or more.

Examples of anticipated inorganic compounds include compounds comprising silicates, aluminates and transition metals. Examples of expected organometallic compounds include poly (dimethylsiloxane), poly (vinylsiloxane) and poly (trifluoropropylsiloxane).

Substrate layer 220 may include a plurality of voids if the material is preferably nanoporous instead of continuous. The voids are generally spherical but have any suitable shape, optionally or additionally including tubular, layered, discoidal, or other forms. It is also envisaged that the voids have some suitable diameter. At least some portions of the pores may be connected with adjacent pores to form a structure having a significant amount of connected or "open" porosity. The voids preferably have an average diameter of 1 micrometer or less, more preferably 100 nanometers or less, even more preferably 10 nanometers or less. It is also envisaged that the voids are uniformly or randomly dispersed within the substrate layer. In a preferred embodiment, the voids are uniformly dispersed within the substrate layer 220.

The benefits expected by making and using self-collimated or formed manufactured sputtering targets 210 include, among other advantages, simplified design, low cost, embedded collimator, good step coverage, and longer target life.

Applications

The sputtering target 210 described herein can be integrated into any process or fabrication design that fabricates or modifies electronic devices, semiconductor devices, and communication / data transfer devices. It is contemplated that electronic devices, semiconductor devices, and communication devices expected herein include certain layer devices that can be used in electronic based, semiconductor based, or communication based products. Prospective devices include microchips, circuit boards, chip packaging, separator sheets, dielectric elements on circuit boards, printed-wiring boards, touch pads, waveguides, optical fibers, photon transfer and sound wave transfer elements. Certain materials that utilize or form a dual damascene process, and other elements of a circuit board such as capacitors, inductors, and resistors.

Electronic base, semiconductor base and communication base / data transfer base products may be finished in that they are ready for use by industry or other consumers. Examples of finished consumer products are televisions, computers, cell phones, pagers, palm-type organizers, portable radios, car stereos, or remote control devices. Also expected are "middle" products such as keyboards, circuit boards, and chip packaging that are potentially used in finishing products.

Electronic products, semiconductor products, and communication / data transmission products may also include prototype devices at certain stages of development, from conceptual models to models of final size. The prototype may or may not include all of the actual devices intended for the finished product, and the prototype may include certain devices composed of composite materials to be initially tested to negate the initial effects on other devices.

A method of forming a device or of forming a uniform film or layer on the surface of a device includes a) providing 400 a self collimating sputtering target; b) providing a surface 410; c) positioning (420) the surface at a distance from the self collimating sputtering target; d) colliding (430) an energy source with the self collimating sputtering target to form one or more atoms; And e) coating 440 the surface with the one or more atoms as shown in FIG. 6. The self collimating sputtering target includes a sputtering target 210 further comprising a surface material 260 and a core material 270, where the surface material 260 includes two or more recesses forming a collimating shape. It is contemplated that the provided surface is any suitable surface comprising a wafer, substrate, dielectric material, hardmask layer, other metal, metal alloy or metal composite layer, antireflective layer, or any other suitable layer material, as described herein. . It is expected that the distance between the self collimating sputtering target 210 and the surface 220 includes some suitable distance already used in conventional PVD devices. The coating, layer or film formed on the surface may be any suitable or desired thickness ranging from one atomic or molecular thickness (1 nanometer or less) to several millimeters in thickness.

Therefore, specific embodiments and applications of sputtered targets with modified shapes are described. However, it will be apparent to those skilled in the art that more modifications than those already described are possible without departing from the concept of the invention. Therefore, the gist of the present invention is limited to the scope of the claims. Moreover, upon understanding the specification and claims of the present invention, all terms should be understood in the broadest manner consistently herein. In particular, the term “comprising” or “comprising” should be understood to refer to an element, component, or step in a non-exclusive manner, and any other element in which the stated element, component, or step exists, is not used or referenced It is combined with a step, an element and a component.

Claims (27)

Core material; And A sputtering target comprising a surface material bonded to the core material, A sputtering target, wherein the surface material comprises two or more recesses forming a collimating shape. The method of claim 1, The sputtering target of which the core material and the surface material comprise the same chemical component. The method of claim 2, The chemical component comprises a sputtering target comprising copper, aluminum, tungsten, titanium, zirconium, cobalt, aluminide, tantalum, magnesium, lithium, silicon, manganese, iron or combinations thereof. The method of claim 3, wherein The component is a sputtering target comprising copper, aluminum, tungsten, titanium, zirconium, cobalt, tantalum, aluminide or combinations thereof. The method of claim 1, Wherein said at least two recesses comprise macroscale modification. The method of claim 5, The macroscale modulation is a sputtering target comprising a circular wave shape. The method of claim 1, And the at least two recesses comprise at least one microdimple. The method of claim 7, wherein Wherein said at least one microdimple comprises a circular closed loop opening. The method of claim 7, wherein Wherein said at least one microdimple comprises a hexagonal closed loop opening. The method of claim 1, Wherein said at least two recesses comprise macroscale modulation and at least one microdimple. Providing a core material; Providing a surface material; Bonding the core material to the surface material to form a sputtering target; A method of providing a self collimating sputtering target comprising forming at least two intentional recesses in the surface material, the method comprising: Providing a self collimating sputtering target in which the recess is in a collimating shape. The method of claim 11, And providing the surface material and providing the surface material comprise providing the same chemical component. The method of claim 12, Wherein said chemical component comprises copper, aluminum, tungsten, titanium, cobalt, aluminide, tantalum, magnesium, lithium, silicon, manganese, iron or combinations thereof. The method of claim 13, And wherein said component comprises copper, aluminum, tungsten, titanium, cobalt, tantalum, aluminide, or a combination thereof. The method of claim 11, Forming at least two intentional recesses in the surface material comprises forming a macroscale modulation. The method of claim 11, Forming at least two intentional recesses in the surface material comprises forming a circular wave shape. The method of claim 11, Forming at least two intentional recesses in the surface material comprises forming at least one microdimple. The method of claim 17, Forming the one or more microdimples comprises forming a circular closed loop opening. The method of claim 17, Forming the one or more microdimples comprises forming a hexagonal closed loop opening. The method of claim 11, Forming at least two intentional recesses in the surface material comprises forming macroscale modulation and at least one microdimple. Providing a self collimating sputtering target; Providing a surface; Positioning the surface at a distance from the self collimating sputtering target; Colliding an energy source with the self collimating sputtering target to form one or more atoms; And Coating the surface with the one or more atoms. A film formed from the sputtering target of claim 11. A film formed by the method of claim 21. A device formed by the sputtering target of claim 11. A device comprising a film formed by the method of claim 21. A capacitor formed by the sputtering target of claim 11. A capacitor comprising a film formed by the method of claim 21.