KR200295233Y1 - Pumping system - Google Patents
Pumping system Download PDFInfo
- Publication number
- KR200295233Y1 KR200295233Y1 KR2020020023624U KR20020023624U KR200295233Y1 KR 200295233 Y1 KR200295233 Y1 KR 200295233Y1 KR 2020020023624 U KR2020020023624 U KR 2020020023624U KR 20020023624 U KR20020023624 U KR 20020023624U KR 200295233 Y1 KR200295233 Y1 KR 200295233Y1
- Authority
- KR
- South Korea
- Prior art keywords
- pumping
- pump
- chamber
- end connected
- lines
- Prior art date
Links
Landscapes
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Abstract
펌핑 시스템에 관한 것으로, 그 목적은 드라이 펌프의 설치 비용 및 유지 비용을 절감하는 것이다. 이를 위해 본 고안에서는 일단이 제1챔버와 연결되고 타단이 펌프와 연결된 제1펌핑라인; 일단이 제2챔버와 연결되고 타단이 제1펌핑라인과 연결된 제2펌핑라인; 제1 및 제2펌핑라인에 설치된 펌핑개폐밸브; 및 제1 및 제2펌핑라인에 설치된 유량조절밸브를 포함하여 펌핑 시스템을 이룬다. 따라서 하나의 드라이 펌프로 여러 대의 챔버를 동시에 펌핑하는 것이 가능해진다.A pumping system, whose purpose is to reduce the installation and maintenance costs of a dry pump. To this end, the present invention includes a first pumping line having one end connected to a first chamber and the other end connected to a pump; A second pumping line having one end connected to the second chamber and the other end connected to the first pumping line; A pumping opening and closing valve installed at the first and second pumping lines; And a flow regulating valve installed on the first and second pumping lines. This makes it possible to pump several chambers simultaneously with one dry pump.
Description
본 고안은 펌핑 시스템에 관한 것으로, 더욱 상세하게는 한 대의 드라이 펌프 장비로 다수개의 챔버를 펌핑할 수 있는 펌핑 시스템에 관한 것이다.The present invention relates to a pumping system, and more particularly to a pumping system capable of pumping a plurality of chambers with one dry pump equipment.
반도체 소자의 제조 공정은 극 미세 기술로서 불순물 분자가 조금만 있어도 소자의 성능이나 수율에 큰 영향을 받기 때문에, 제조 과정에서 원치 않는 불순물이나 공기 입자를 제거하여 청정환경을 만들어주기 위해 챔버 내부를 진공 상태로 만들고, 진공 챔버 내에서 막 증착 등의 반도체 제조 공정을 수행한다.The semiconductor device manufacturing process is an extremely fine technology, and even a small amount of impurity molecules are greatly influenced by the performance and yield of the device. Therefore, vacuuming the inside of the chamber to remove unwanted impurities or air particles during the manufacturing process to create a clean environment. And a semiconductor manufacturing process such as film deposition in a vacuum chamber.
챔버를 진공 상태로 만드는 펌프는 펌핑 능력에 따라 사용되는 종류가 달라진다. 먼저, 로타리 펌프와 같은 1차 펌프를 이용하여 진공 챔버 내부를 대기 상태로부터 저진공도, 일예로 10-3torr 에 도달할 때까지 펌핑하고, 그 다음 드라이 펌프와 같은 2차 펌프를 이용하여 원하는 고진공 상태가 될 때까지 계속 펌핑한다.The type of pump used to vacuum the chamber depends on the pumping capacity. First, the primary chamber, such as a rotary pump, is used to pump the interior of the vacuum chamber from atmospheric to low vacuum, for example 10 -3 torr, and then the desired high vacuum using a secondary pump, such as a dry pump. Continue pumping until state is reached.
그러면, 종래 챔버 펌핑 시스템에 대해 첨부된 도면을 참조하여 간략하게 설명한다.Then, the conventional chamber pumping system will be briefly described with reference to the accompanying drawings.
도 1은 종래 챔버 펑핑 시스템을 도시한 것으로서, 이에 도시된 바와 같이, 챔버(1,11)에는 펌핑라인(2,12) 및 퍼지(purge)라인(3,13)이 연결되어 있으며, 펌핑라인(2,12)의 말단에는 펌프(4)가 설치되어 있다.1 illustrates a conventional chamber ping system, and as shown therein, pumping lines 2 and 12 and purge lines 3 and 13 are connected to chambers 1 and 11, and pumping lines are shown in FIG. The pump 4 is provided in the terminal of (2, 12).
펌핑라인(2,12)에는 펌핑개폐밸브(5,15)가 설치되어 있으며, 펌핑개폐밸브(5,15)를 열거나 닫음으로써 펌핑 여부를 결정한다. 이와 마찬가지로 퍼지라인(3,13)에는 퍼지개폐밸브(6,16)가 설치되어 있으며, 퍼지개폐밸브(6,16)를 열거나 닫음으로써 퍼지 여부를 결정한다.Pumping opening and closing valves 5 and 15 are installed at the pumping lines 2 and 12, and the pumping opening and closing valves 5 and 15 are opened or closed to determine whether to be pumped. In the same manner, purge lines 3 and 13 are provided with purge open / close valves 6 and 16, and whether or not purge is determined by opening or closing the purge open / close valves 6 and 16. FIG.
그런데, 드라이 펌프의 경우 두 챔버를 동시에 펌핑할 수가 없으며 한 챔버만으로 그 펌핑 능력에 한계가 있기 때문에 한 챔버를 펌핑할 때에는 다른 나머지 챔버는 펌핑개폐밸브를 닫고 있어야 한다.However, in the case of a dry pump, two chambers cannot be pumped at the same time, and since only one chamber has a limited pumping capacity, the other chamber should close the pump opening / closing valve when pumping one chamber.
예를 들어 한 챔버(1)의 펌핑개폐밸브(5)를 열면 나머지 챔버(11)의 펌핑개폐밸브(15)는 닫은 상태에서 펌프(4)를 작동시켜 펌핑한다.For example, when the pump opening / closing valve 5 of one chamber 1 is opened, the pump opening / closing valve 15 of the other chamber 11 is pumped by operating the pump 4 in a closed state.
따라서, 보통 각각의 챔버에 드라이 펌프 장비를 별도로 설치하는데, 드라이 펌프는 고가이며 또한 주기적으로 정비해야하므로 유지비가 많이 드는 문제점이 있었다.Therefore, in general, dry pump equipment is separately installed in each chamber, and the dry pump has a problem in that maintenance costs are high because it is expensive and needs to be periodically maintained.
본 고안은 상기한 바와 같은 문제점을 해결하기 위한 것으로, 그 목적은 드라이 펌프의 설치 비용 및 유지 비용을 절감하는 것이다.The present invention is to solve the problems as described above, the purpose is to reduce the installation cost and maintenance cost of the dry pump.
도 1은 종래 챔버 펑핑 시스템을 도시한 것이다.1 illustrates a conventional chamber puncturing system.
도 2는 본 고안에 따른 펌핑 시스템을 도시한 것이다.2 shows a pumping system according to the present invention.
상기한 바와 같은 목적을 달성하기 위하여, 본 고안에서는 펌핑 라인에 유량을 조절할 수 있는 유량조절밸브를 설치하는 것을 특징으로 한다.In order to achieve the object as described above, the present invention is characterized in that the flow rate control valve that can adjust the flow rate in the pumping line.
이 때 유량조절밸브를 이용하여 펌핑라인을 통해 펌핑되는 양을 조절하면 하나의 드라이 펌프로 여러 개의 챔버를 동시에 펌핑하는 것이 가능해진다.At this time, by controlling the amount of pumping through the pumping line using the flow control valve it is possible to pump several chambers at the same time with a single dry pump.
즉, 본 고안에 따른 펌핑 시스템은, 일단이 제1챔버와 연결되고 타단이 펌프와 연결된 제1펌핑라인; 일단이 제2챔버와 연결되고 타단이 제1펌핑라인과 연결된 제2펌핑라인; 제1 및 제2펌핑라인에 설치된 펌핑개폐밸브; 및 제1 및 제2펌핑라인에 설치된 유량조절밸브를 포함하는 구성이며, 여기에 제1 및 제2챔버에 각각 연결된 퍼지라인을 더 포함할 수 있다.That is, the pumping system according to the present invention, one end is connected to the first chamber and the other end is connected to the pump pumping line; A second pumping line having one end connected to the second chamber and the other end connected to the first pumping line; A pumping opening and closing valve installed at the first and second pumping lines; And a flow control valve installed in the first and second pumping lines, and further comprising a purge line connected to the first and second chambers, respectively.
이하, 본 고안에 따른 펌핑 시스템에 대해 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings for the pumping system according to the present invention will be described in detail.
도 2는 본 고안에 따른 펌핑 시스템을 도시한 것으로서, 이에 도시된 바와 같이, 챔버(31,41)에는 펌핑라인(32,42) 및 퍼지(purge)라인(33,43)이 연결되어 있으며, 펌핑라인(32,42)의 말단에는 펌프(34)가 설치되어 있다.2 shows a pumping system according to the present invention, and as shown therein, pumping lines 32 and 42 and purge lines 33 and 43 are connected to the chambers 31 and 41. Pumps 34 are installed at the ends of the pumping lines 32 and 42.
펌핑라인(32,42)에는 펌핑개폐밸브(35,45)가 설치되어 있으며, 펌핑개폐밸브(35,45)를 열거나 닫음으로써 펌핑 여부를 결정한다. 이와 마찬가지로 퍼지라인(33,43)에는 퍼지개폐밸브(36,46)가 설치되어 있으며, 퍼지개폐밸브(36,46)를 열거나 닫음으로써 퍼지 여부를 결정한다.Pumping opening and closing valves 35 and 45 are installed in the pumping lines 32 and 42, and the pumping opening and closing valves 35 and 45 are determined by opening or closing the pumping opening and closing valves 35 and 45. In the same manner, purge lines 33 and 43 are provided with purge opening and closing valves 36 and 46, and whether or not purge is determined by opening or closing the purge opening and closing valves 36 and 46.
또한, 펌핑라인(32,42)에는 펌핑라인을 통해 펌핑되는 유량을 조절할 수 있는 유량조절밸브(37,47)가 설치되어 있다. 유량조절밸브(37,47)를 이용하여 유량을 조절함으로써 챔버 내의 압력을 원하는 값이 되도록 조절할 수도 있고 압력을 유지시킬 수도 있으며, 또한 두 챔버(31,41)를 동시에 펌핑할 경우 드라이 펌프(34)에 가해지는 부하를 경감시킬 수 있기 때문에 두 챔버(31,41)를 동시에 펌핑하는 것이 가능해진다.In addition, the pumping lines 32 and 42 are provided with flow control valves 37 and 47 for adjusting the flow rate pumped through the pumping line. By adjusting the flow rate using the flow control valves 37 and 47, the pressure in the chamber can be adjusted to a desired value or the pressure can be maintained. Also, when the two chambers 31 and 41 are pumped at the same time, the dry pump 34 Since it is possible to reduce the load on the), it is possible to pump the two chambers (31, 41) at the same time.
예를 들어 두 챔버(31,42)의 펌핑개폐밸브(35,45)를 연 상태에서 한 챔버(31)의 유량조절밸브(37)를 원하는 유량으로 조정하고, 나머지 한 챔버(41)의 유량조절밸브(47)를 드라이 펌프(34)에 과도한 부하가 걸리지 않는 범위 내에서 원하는 유량으로 조정하여 드라이 펌프(34)를 작동시키면 두 챔버(31,41)를 동시에 펌핑할 수 있다.For example, while the pumping opening and closing valves 35 and 45 of the two chambers 31 and 42 are opened, the flow rate control valve 37 of one chamber 31 is adjusted to a desired flow rate, and the flow rate of the other chamber 41 is changed. When the dry pump 34 is operated by adjusting the control valve 47 to a desired flow rate within a range where an excessive load is not applied to the dry pump 34, both chambers 31 and 41 may be pumped at the same time.
그러나, 반드시 두 챔버를 동시에 펌핑하는 것으로 한정할 필요는 없으며, 한 챔버만을 펌핑할 수도 있고, 두 개 이상의 챔버를 동시에 펌핑할 수도 있다.However, it is not necessarily limited to pumping two chambers at the same time, and may pump only one chamber or pump two or more chambers simultaneously.
상술한 바와 같이, 본 고안에서는 펌핑라인에 유량조절밸브를 설치하여 두 개 이상의 챔버를 동시에 펌핑할 수 있으므로, 고가의 드라이 펌프의 설치 개수를 줄여 공정비용을 절감하는 효과가 있다.As described above, in the present invention, by installing a flow control valve in the pumping line, it is possible to pump two or more chambers at the same time, thereby reducing the number of installation of the expensive dry pump, thereby reducing the process cost.
또한 드라이 펌프의 개수가 줄어들므로, 드라이 펌프를 주기적으로 정비하는 데 드는 비용을 절감하는 효과가 있다.In addition, since the number of dry pumps is reduced, there is an effect of reducing the cost of maintaining the dry pump periodically.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2020020023624U KR200295233Y1 (en) | 2002-08-07 | 2002-08-07 | Pumping system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2020020023624U KR200295233Y1 (en) | 2002-08-07 | 2002-08-07 | Pumping system |
Publications (1)
Publication Number | Publication Date |
---|---|
KR200295233Y1 true KR200295233Y1 (en) | 2002-11-18 |
Family
ID=73127152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2020020023624U KR200295233Y1 (en) | 2002-08-07 | 2002-08-07 | Pumping system |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR200295233Y1 (en) |
-
2002
- 2002-08-07 KR KR2020020023624U patent/KR200295233Y1/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20060175012A1 (en) | Semiconductor fabrication equipment and method for controlling pressure | |
US6589023B2 (en) | Device and method for reducing vacuum pump energy consumption | |
KR200295233Y1 (en) | Pumping system | |
KR20230096820A (en) | Chamber apparatus for both high pressure and vacuum process | |
KR20070075935A (en) | Vacuum pumping system of substrate processing apparatus and method of vacuum pumping transfer chamber using the same | |
KR200212869Y1 (en) | pipe arrangement system for inducing vacuum in fabrication of semiconductor | |
KR20060122420A (en) | Vacuum system | |
KR100222960B1 (en) | Pumping line for low pressure process | |
WO2022075230A1 (en) | Vacuum exhaust system | |
KR100445631B1 (en) | Slot valve opening and shutting apparatus of semiconductor device fabrication equipment | |
JP2001295761A (en) | Evacuation system | |
KR200233847Y1 (en) | throttle valve for controlling pressure of PSG deposition process chamber in fabrication of semiconductor | |
KR20060119363A (en) | Vacuum forming equipment for semiconductor manufacturing equipment | |
KR0136328Y1 (en) | Gas exhausting line for semiconductor vacuum chamber | |
TWI240947B (en) | Pumping system of load lock chamber and operating method thereof | |
JP3558557B2 (en) | Vacuum pump and driving method thereof | |
KR19990027885A (en) | Chamber part of equipment for manufacturing semiconductor device | |
KR20070078139A (en) | Vacuum equipment for use in fabricating semiconductor device | |
KR20030001836A (en) | Apparatus for manufacturing semiconductor device | |
KR19980057913U (en) | Multi-chamber pressure control structure | |
WO2020240155A1 (en) | Vacuum assembly and vacuum pump with an axial through passage | |
KR20030096479A (en) | cooling gas providing device of etching apparatus for semiconductor wafer | |
KR19980021223A (en) | VACUUM SYSTEM | |
KR20010102762A (en) | Vacuum system | |
KR20100050746A (en) | Isolation valve for semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
REGI | Registration of establishment | ||
FPAY | Annual fee payment |
Payment date: 20080930 Year of fee payment: 7 |
|
LAPS | Lapse due to unpaid annual fee |