KR20010084643A - Method for fabricating of phase shift mask - Google Patents

Method for fabricating of phase shift mask Download PDF

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Publication number
KR20010084643A
KR20010084643A KR1020000009838A KR20000009838A KR20010084643A KR 20010084643 A KR20010084643 A KR 20010084643A KR 1020000009838 A KR1020000009838 A KR 1020000009838A KR 20000009838 A KR20000009838 A KR 20000009838A KR 20010084643 A KR20010084643 A KR 20010084643A
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South Korea
Prior art keywords
layer
phase shift
phase inversion
mask
photoresist
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KR1020000009838A
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Korean (ko)
Inventor
김상철
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박종섭
주식회사 하이닉스반도체
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Priority to KR1020000009838A priority Critical patent/KR20010084643A/en
Publication of KR20010084643A publication Critical patent/KR20010084643A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Abstract

PURPOSE: A method for preparing a phase shift mask (referred as "PSM") is provided, to omit the dry-etching and the over coating for simplifying the process, thereby improving the productivity. CONSTITUTION: The method comprises the steps of forming a phase shift layer(202) and a light-shield layer on a mask board(201) by evaporation-deposition; removing the light-shield layer selectively to expose the some part of the phase shift layer(202); coating a sensitive layer on the light-shield layer and the phase shift layer(202); patterning the sensitive layer selectively; etching the phase shift layer(202) by using the patterned sensitive layer; and removing the sensitive layer. Preferably the sensitive layer is patterned to have the fixed interval and to expose a plurality of the phase shift layers for dividing the phase shift layer exposed by the removal of the light-shield layer.

Description

위상 반전 마스크(ＰＳＭ) 제조 방법{METHOD FOR FABRICATING OF PHASE SHIFT MASK}Phase inversion mask (PSM) manufacturing method {METHOD FOR FABRICATING OF PHASE SHIFT MASK}

본 발명은 반도체 소자에 관한 것으로, 특히 공정을 단순화하여 생산성을 증대시킬 수 있는 위상 반전 마스크(PSM) 제조 방법에 대한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a method of manufacturing a phase inversion mask (PSM) that can increase productivity by simplifying a process.

이하, 첨부된 도면을 참조하여 종래의 위상 반전 마스크 제조 방법을 설명하면 다음과 같다.Hereinafter, a conventional phase inversion mask manufacturing method will be described with reference to the accompanying drawings.

도 1a 내지 도 1e는 종래의 위상 반전 마스크의 제조 공정 단면도이다.1A to 1E are cross-sectional views of a manufacturing process of a conventional phase inversion mask.

도 1a에 도시된 바와 같이, 마스크 기판(101) 상에 위상 반전층(102)을 형성하고, 상기 위상 반전층(102) 상에 크롬층(103)을 증착하여 마스크 기판(101), 위상 반전층(102), 크롬층(103)의 적층 구조를 형성한다.As shown in FIG. 1A, a phase inversion layer 102 is formed on the mask substrate 101, and a chromium layer 103 is deposited on the phase inversion layer 102 to mask the substrate 101 and phase inversion. The laminated structure of the layer 102 and the chromium layer 103 is formed.

이후, 상기 크롬층(103) 상에 제 1 포토레지스트(104)를 도포하고 노광 및 현상 공정으로 상기 크롬층(103)이 소정 간격을 갖고 복수개 드러나도록 제 1 포토레지스트(104)를 패터닝한다.Thereafter, the first photoresist 104 is coated on the chromium layer 103, and the first photoresist 104 is patterned such that the plurality of chromium layers 103 are exposed at predetermined intervals by an exposure and development process.

상기 마스크 기판(101)의 구성물질은 석영(quartz)이다.The material of the mask substrate 101 is quartz.

도 1b에 도시됨 바와 같이 상기 패터닝된 제 1 포토레지스트(104)를 마스크로 하여 상기 크롬층(103)과 위상 반전층(102)를 차례로 식각하여 상기 마스크 기판(101)의 상부를 소정 부분 노출시키고 상기 제 1 포토레지스트(104)를 제거한다.As shown in FIG. 1B, the chromium layer 103 and the phase inversion layer 102 are sequentially etched using the patterned first photoresist 104 as a mask to expose a portion of the upper portion of the mask substrate 101. And remove the first photoresist 104.

상기 식각은 드라이 챔버(dry chamber)내에서 진행되며 드라이 챔버 내의 폴리머(polymer)성 이물로 인하여 패턴 불량이 발생한다.The etching is performed in a dry chamber, and a pattern defect occurs due to polymer foreign matter in the dry chamber.

도 1c에 도시된 바와 같이, 상기 크롬층(103) 상에 제 2 포토레지스트(105)를 도포한다.As shown in FIG. 1C, a second photoresist 105 is coated on the chromium layer 103.

상기 제 2 포토레지스트(105)를 도포함에 있어서 차징 업(charge up) 방지를 위해 오버 코팅(over coating)(106)한다.In coating the second photoresist 105, an over coating 106 is performed to prevent charging up.

도 1d에 도시된 바와 같이, 상기 크롬층(103)과 위상 반전층(102)의 식각으로 드러난 마스크 기판(101)이 모두 드러나도록 노광 및 현상 공정으로 제 2 포토레지스트(105)를 패터닝한다.As illustrated in FIG. 1D, the second photoresist 105 is patterned by an exposure and development process so that the mask substrate 101 exposed by the etching of the chromium layer 103 and the phase inversion layer 102 is exposed.

도 1e에 도시된 바와 같이, 상기 패터닝된 제 2 포토레지스트(105)를 마스크로 상기 위상 반전층(102)이 드러나도록 노출된 크롬층(103)을 제거한 후, 제 2 포토레지스트(105)를 모두 제거하여 종래의 위상 반전 마스크를 완성한다.As shown in FIG. 1E, the exposed chromium layer 103 is removed using the patterned second photoresist 105 as a mask to expose the phase inversion layer 102, and then the second photoresist 105 is removed. All are removed to complete the conventional phase inversion mask.

그러나 상기와 같은 종래의 위상 반전 마스크 제조 방법은 다음과 같은 문제점이 있다.However, the conventional method of manufacturing a phase reversal mask as described above has the following problems.

첫째, 건식각 챔버 내의 폴리머성 이물에 의해 패턴 불량이 유발된다.First, pattern defects are caused by polymeric foreign matter in the dry etching chamber.

둘째, 차징 업(charge up) 방지를 위해 행하는 포토레지스트의 오버 코팅(over coating)에 있어서, 이물이 발생할 경우 재 코팅(coating)을 해야한다.Second, in over coating of photoresist which is performed to prevent charge up, recoating should be carried out when foreign matter occurs.

본 발명은 상기와 같은 문제를 해결하기 위하여 안출한 것으로 공정을 단순화하여 생산성을 증대시킬 수 있는 위상 반전 마스크 제조 방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a method for manufacturing a phase reversal mask that can increase the productivity by simplifying the process to solve the above problems.

도 1a 내지 도 1e는 종래의 위상 반전 마스크 제조 공정 단면도1A to 1E are cross-sectional views of a conventional phase inversion mask manufacturing process

도 2a 내지 도 2f는 본 발명의 실시예에 따른 위상 반전 마스크 제조 공정 단면도2A to 2F are cross-sectional views of a manufacturing process of a phase inversion mask according to an embodiment of the present invention.

도면의 주요 부분에 대한 부호 설명Explanation of symbols for the main parts of drawings

201 : 마스크 기판 202 : 위상 반전층201: mask substrate 202: phase inversion layer

203 : 크롬층 204 : 제 1 포토레지스트203 chrome layer 204 first photoresist

205 : 제 2 포토레지스트205 second photoresist

상기와 같은 목적을 달성하기 위한 본 발명에 따른 위상 반전 마스크 제조 방법은 마스크 기판 상에 위상 반전층과 차광층을 증착하는 단계와, 상기 차광층을 선택적으로 제거하여 상기 위상 반전층의 소정 부분을 드러내는 단계와, 상기 차광층과 상기 위상 반전층 상에 감광막을 도포하는 단계와, 상기 감광막을 선택적으로 패터닝하는 단계와, 상기 패터닝된 감광막을 이용하여 상기 위상 반전층을 식각하는 단계와, 상기 감광막을 제거하는 단계를 포함하여 형성함을 특징으로 한다.According to an aspect of the present invention, there is provided a method for fabricating a phase inversion mask, including depositing a phase inversion layer and a light shielding layer on a mask substrate, and selectively removing the light shielding layer to remove a predetermined portion of the phase inversion layer. Exposing, applying a photoresist film on the light shielding layer and the phase reversal layer, selectively patterning the photoresist film, etching the phase reversal layer using the patterned photoresist film, and Forming comprising the step of removing.

이하, 본 발명의 실시예에 따른 위상 반전 마스크 제조 방법에 관하여 첨부된 도면을 참조하여 설명하면 다음과 같다.Hereinafter, a method for manufacturing a phase reversal mask according to an embodiment of the present invention will be described with reference to the accompanying drawings.

도 2a에 도시된 바와 같이, 마스크 기판(201) 상에 위상 반전층(202)과 크롬층(203)을 차례로 적층하여 형성하고, 상기 크롬층(203)의 소정 부분이 노출되도록 제 1 포토레지스트(204)를 패터닝한다.As shown in FIG. 2A, a phase inversion layer 202 and a chromium layer 203 are sequentially stacked on the mask substrate 201, and a first photoresist is exposed to expose a predetermined portion of the chromium layer 203. Pattern 204.

상기 마스크 기판(201)의 구성물질은 석영이다.The material of the mask substrate 201 is quartz.

그리고, 도 2b에 도시된 바와 같이, 상기 제 1 포토레지스트(204)를 마스크로 이용하여 위상 반전층(202)이 노출되도록 크롬층(203)을 식각한다.As illustrated in FIG. 2B, the chromium layer 203 is etched using the first photoresist 204 as a mask to expose the phase inversion layer 202.

그리고, 도 2c에 도시된 바와 같이, 위상 반전층(202)과 크롬층(203) 상에 제 2 포토레지스트(205)를 도포한다.As shown in FIG. 2C, a second photoresist 205 is coated on the phase inversion layer 202 and the chromium layer 203.

이어, 도 2d에 도시된 바와 같이, 상기 크롬층(203)을 드러낸 영역의 위상 반전층(203)을 분할하기 위하여 소정의 간격을 갖고 상기 위상 반전층(202)이 복수개 드러나도록 제 2 포토레지스트(205)를 패터닝한다.Subsequently, as shown in FIG. 2D, a second photoresist is formed such that the plurality of phase inversion layers 202 are exposed at predetermined intervals to divide the phase inversion layer 203 of the region where the chromium layer 203 is exposed. Pattern 205.

도 2e에 도시된 바와 같이, 상기 패터닝된 제 2 포토레지스트(205)를 마스크로 이용하여 마스크 기판(201)이 드러나도록 상기 위상 반전층(202)을 식각한다.As shown in FIG. 2E, the phase inversion layer 202 is etched using the patterned second photoresist 205 as a mask to expose the mask substrate 201.

도 2f에 도시된 바와 같이, 상기 제 2 포토레지스트(205)를 제거하여 본 발명의 실시예에 따른 위상 반전 마스크를 완성한다.As shown in FIG. 2F, the second photoresist 205 is removed to complete the phase inversion mask according to the embodiment of the present invention.

상기와 같은 본 발명의 위상 반전 마스크 제조 방법은 다음과 같은 효과가 있다.The method of manufacturing a phase inversion mask of the present invention as described above has the following effects.

첫째, 크롬 건식각 공정 및 오버 코팅 공정을 생략하므로써 공정이 단순화된다.First, the process is simplified by omitting the chrome dry etching process and the overcoating process.

둘째, 크롬층과 위상 반전층을 동시에 식각하지 않고 크롬층을 미리 제거한 후에 위상 반전층을 식각하므로써 프로파일(profile)의 관리와 CD(critical dimension)의 관리가 용이하고, 균일도(uniformity)가 개선된다.Second, by removing the chromium layer in advance without etching the chromium layer and the phase inversion layer at the same time, by etching the phase inversion layer, it is easy to manage the profile and manage the CD (critical dimension) and improve the uniformity. .

셋째, 크롬층 건식각 공정을 생략하므로써 크롬 건식각 챔버내의 이물에 의한 패턴 불량이 개선되어 생산량(yield)의 개선 및 TAT(turnaround time)이 단축된다.Third, by eliminating the chromium layer dry etching process, pattern defects caused by foreign matter in the chromium dry etching chamber are improved, thereby improving yield and shortening turnaround time.

Claims (2)

마스크 기판 상에 위상 반전층과 차광층을 증착하는 단계;Depositing a phase inversion layer and a light shielding layer on the mask substrate; 상기 차광층을 선택적으로 제거하여 상기 위상 반전층의 소정 부분을 드러내는 단계;Selectively removing the light blocking layer to expose a portion of the phase reversal layer; 상기 차광층과 상기 위상 반전층 상에 감광막을 도포하는 단계;Coating a photosensitive film on the light blocking layer and the phase inversion layer; 상기 감광막을 선택적으로 패터닝하는 단계;Selectively patterning the photoresist; 상기 패터닝된 감광막을 이용하여 상기 위상 반전층을 식각하는 단계;Etching the phase reversal layer by using the patterned photoresist; 상기 감광막을 제거하는 단계를 포함하여 형성함을 특징으로 하는 위상 반전 마스크 제조 방법.And removing the photosensitive film. 제 1항에 있어서, 상기 감광막의 패터닝은 상기 차광층의 제거로 드러난 위상 반전층을 분할하기 위해 소정 간격을 갖고 상기 위상 반전층이 복수개 드러나도록 형성함을 특징으로 하는 위상 반전 마스크 제조 방법.The method of claim 1, wherein the patterning of the photoresist layer is performed such that the plurality of phase inversion layers are exposed at predetermined intervals to divide the phase inversion layer exposed by the removal of the light shielding layer.
KR1020000009838A 2000-02-28 2000-02-28 Method for fabricating of phase shift mask KR20010084643A (en)

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JPH03242648A (en) * 1990-02-21 1991-10-29 Matsushita Electron Corp Photomask
JPH0651489A (en) * 1992-03-23 1994-02-25 Dainippon Printing Co Ltd Production of halftone phase shift photomask
JPH06250376A (en) * 1993-02-23 1994-09-09 Toppan Printing Co Ltd Phase shift mask and production of phase shift mask
JPH07152146A (en) * 1993-11-30 1995-06-16 Sony Corp Production of phase shift mask
KR0170686B1 (en) * 1995-09-13 1999-03-20 김광호 The manufacturing method of half-tone phase shifht mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03242648A (en) * 1990-02-21 1991-10-29 Matsushita Electron Corp Photomask
JPH0651489A (en) * 1992-03-23 1994-02-25 Dainippon Printing Co Ltd Production of halftone phase shift photomask
JPH06250376A (en) * 1993-02-23 1994-09-09 Toppan Printing Co Ltd Phase shift mask and production of phase shift mask
JPH07152146A (en) * 1993-11-30 1995-06-16 Sony Corp Production of phase shift mask
KR0170686B1 (en) * 1995-09-13 1999-03-20 김광호 The manufacturing method of half-tone phase shifht mask

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