KR20010047287A - Apparatus which measure a rate of coating film's reflection in wafer coater - Google Patents
Apparatus which measure a rate of coating film's reflection in wafer coater Download PDFInfo
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- KR20010047287A KR20010047287A KR1019990051438A KR19990051438A KR20010047287A KR 20010047287 A KR20010047287 A KR 20010047287A KR 1019990051438 A KR1019990051438 A KR 1019990051438A KR 19990051438 A KR19990051438 A KR 19990051438A KR 20010047287 A KR20010047287 A KR 20010047287A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
Description
본 발명은 웨이퍼 상에 도포되는 포토레지스트(photo resist)막 및 미반사(anti-reflection)박막 등의 도포막의 광반사율을 측정하기 위한 것으로써, 더욱 상세하게는 회전 도포장치 내에 설치되어 도포막의 광반사율 및 두께를 실시간으로 측정하여 최소한의 광반사율을 갖는 도포막이 웨이퍼에 도포될 수 있도록 한 웨이퍼 회전도포장치 내의 도포막 광반사율 측정장치이다.The present invention is to measure the light reflectance of the coating film such as photoresist film and anti-reflection thin film applied on the wafer, more specifically, it is provided in the rotary coating device to be applied to the light of the coating film A coating film light reflectance measuring device in a wafer rotating coating apparatus in which a reflecting film and a thickness are measured in real time so that a coating film having a minimum light reflectance can be applied to a wafer.
일반적으로 반도체 소자를 제조하기 위해서 웨이퍼 회전도포장치 내에서 웨이퍼 상에 포토레지스트막 및 반반사막 등의 도포막을 도포한 다음 노광장치를 이용하여 도포막을 선택적으로 노광하여 패턴을 형성하게 된다.Generally, in order to manufacture a semiconductor device, a coating film such as a photoresist film and a semi-reflective film is coated on a wafer in a wafer rotating coating apparatus, and then a coating film is selectively exposed using an exposure apparatus to form a pattern.
이러한 반도체 소자 제조공정에 사용되는 웨이퍼 회전도포장치를 제 1 도를 참조하여 설명하면, 종래의 웨이퍼 회전도포장치에서는 웨이퍼(10)에 포토레지스트막 또는 반반사막 등의 도포막(11)을 도포하기 위한 도포액을 분사하고, 회전부(12)에 의해 웨이퍼(10)가 소정의 회전속도로 회전되면서 원심력에 의해 도포액을 이동시켜서 웨이퍼(10) 전표면에 도포막(11)이 도포되도록 된다.Referring to FIG. 1, the wafer rotating coating apparatus used in the semiconductor device manufacturing process is applied to the coating film 11 such as a photoresist film or a semi-reflective coating on the wafer 10 in the conventional wafer rotating coating apparatus. The coating liquid is sprayed and the coating film 11 is applied to the entire surface of the wafer 10 by moving the coating liquid by centrifugal force while the wafer 10 is rotated by the rotating part 12 at a predetermined rotational speed.
이러한 일련의 과정을 통해 도포막(11)이 도포된 웨이퍼는 노광 장치에서 도포막(11)이 노광된다.The coating film 11 is exposed to the wafer in which the coating film 11 is applied through such a series of processes.
여기서, 노광 장치에 사용되는 광은 금속 재질로 이루어진 웨이퍼 표면에 의해 반사되는데, 이 과정에서 도포막(11)은 노광에 사용되는 광이 최소한 반사되도록 하여 최적의 노광 패턴을 얻도록 하여야 한다.Here, the light used in the exposure apparatus is reflected by the surface of the wafer made of a metal material. In this process, the coating film 11 should at least reflect the light used for the exposure to obtain an optimal exposure pattern.
즉, 노광에 사용되는 광의 반사율이 클 경우 미세 패턴의 형성을 저해시키게 되기 때문이다.That is, when the reflectance of light used for exposure is large, the formation of a fine pattern is inhibited.
따라서, 도포막(11)이 최소한의 광반사율을 가지도록 하여야 하며, 이를 위해 웨이퍼 회전도포 장치에서는 최소한의 광반사율 및 두께를 가지는 도포막(11)을 도포하기 위해 회전부(12)의 회전속도를 최적화시켜야 한다.Therefore, the coating film 11 should have a minimum light reflectance. For this purpose, in the wafer rotating coating apparatus, the rotation speed of the rotating part 12 is increased to apply the coating film 11 having the minimum light reflectance and thickness. Should be optimized
이는 도포되는 도포막(11)의 두께가 회전부(12)의 회전속도에 의한 원심력에 의해 결정되기 때문이다.This is because the thickness of the coating film 11 to be applied is determined by the centrifugal force due to the rotational speed of the rotating part 12.
그러므로, 이를 위해 회전부(12)의 회전속도를 가변시키면서 다수개의 웨이퍼 표면에 도포막(11)을 도포시킨 다음, 별도의 반사율 측정장치를 통해 도포막의 광반사율 및 두께를 측정하여서 측정된 반사율 및 두께에 의해 회전부(12)의 최적 회전속도를 결정하여서 도포막이 도포되도록 한다.Therefore, for this purpose, the coating film 11 is applied to a plurality of wafer surfaces while varying the rotational speed of the rotating part 12, and then the reflectance and thickness measured by measuring the light reflectance and thickness of the coating film through a separate reflectance measuring device. By determining the optimum rotational speed of the rotating unit 12 to apply a coating film.
그러나, 이러한 종래의 웨이퍼 회전도포장치는 회전부의 회전속도에 따라 여러개의 웨이퍼에 도포막을 도포한 다음, 도포된 웨이퍼를 별도의 반사율 측정장치로 이송시켜 반사율 및 두께를 측정하여야 하므로 측정과정의 번거로움이 많을 뿐만 아니라, 웨이퍼 이송에 따른 시간적 손실이 발생되어서 회전도포 장치의 도포 효율성을 저하시키게 된다.However, such a conventional wafer rotation coating apparatus has a cumbersome process because it is necessary to apply a coating film to a plurality of wafers according to the rotational speed of the rotating part, and then transfer the coated wafer to a separate reflectivity measuring device to measure reflectance and thickness. Not only this, but also a loss of time due to wafer transfer occurs, which reduces the coating efficiency of the rotary coating device.
또한, 별도의 반사율 측정장치에 사용되는 광과 실질적으로 웨이퍼를 노광하는 노광장치에 사용되는 광은 서로 파장대가 달라 광에 따른 실질적인 반사율 및 두께의 차이가 발생되어 최적의 노광 패턴을 얻지 못하는 문제점이 있다.In addition, the light used in the separate reflectance measuring device and the light used in the exposure apparatus for exposing the wafer are different from each other in wavelength range, so that a difference in the actual reflectance and thickness according to the light is generated, thereby failing to obtain an optimal exposure pattern. have.
이에 본 발명은 이러한 종래의 문제점을 해결하기 위해 안출된 것으로써, 회전도포 장치 내에 설치되어서 도포막의 광반사율을 실시간으로 측정하여 회전도포 장치에 의한 회전도포 공정의 생산효율을 증대시킬 수 있도록 하는데 그 목적이 있다.Therefore, the present invention has been made to solve such a conventional problem, it is installed in the rotary coating device to measure the light reflectance of the coating film in real time to increase the production efficiency of the rotary coating process by the rotary coating device There is a purpose.
또한, 본 발명은 웨이퍼 노광시 최적의 노광 패턴을 얻을 수 있도록 하는데 그 목적이 있다.In addition, it is an object of the present invention to obtain an optimal exposure pattern during wafer exposure.
따라서, 상기 목적을 이루어고자 본 발명에 따른 웨이퍼 회전도포장치 내의 박막 두께 측정장치는 웨이퍼 회전도포장치의 회전부에 의해 소정의 회전속도로 회전되는 웨이퍼 상단에 설치되어서 웨이퍼 상의 도포막으로 광을 입사시키는 광입사부와, 광입사부에서 입사된 광이 도포막에 반사되면 이를 수광하도록 웨이퍼 상단에 설치된 광수광부와, 광수광부에 연결되어 도포막에 반사되어 광수광부로 수광된 광 중에서 광입사부의 입사광과 동일한 파장대의 광만을 선택하여서 전기적 신호로 변환시키는 모노크로메터와, 모노크로메터에 연결되어전기적 신호로 변환된 광의 세기를 측정하여 이에 따라 도포막의 반사율 또는 두께를 측정하여 회전부의 회전 속도를 결정하는 광세기 측정부로 이루어진다.Therefore, in order to achieve the above object, the thin film thickness measuring apparatus in the wafer rotating coating apparatus according to the present invention is installed on the top of the wafer rotated at a predetermined rotational speed by the rotating part of the wafer rotating coating apparatus to inject light into the coating film on the wafer. The incident light of the light incident part, the light receiving part installed at the top of the wafer so as to receive the light incident from the light incident part, and the light incident part is connected to the light receiving part and reflected on the coating film and received by the light receiving part. Monochrome to convert only the light of the same wavelength band to the electrical signal and to measure the intensity of the light connected to the electrical signal converted to the electrical signal to determine the rotational speed of the rotating part by measuring the reflectance or thickness of the coating film accordingly It consists of a light intensity measuring unit.
제 1 도는 종래의 웨이퍼 도포장치를 설명하기 위한 도면.1 is a view for explaining a conventional wafer coating apparatus.
제 2 도는 본 발명에 따른 웨이퍼 도포장치 내에서의 도포막 광반사율 측정장치를 설명하기 위한 도면.2 is a view for explaining a coating film light reflectance measuring apparatus in the wafer coating apparatus according to the present invention.
■ 도면의 주요부분에 대한 부호의 설명 ■■ Explanation of symbols for main parts of drawing ■
10 : 웨이퍼 11 : 도포막10 wafer 11 coating film
12 : 회전부 100 : 발광부12: rotating part 100: light emitting part
101 : 수광부 102 : 모노크로메터(monochrometer)101: light receiver 102: monochrometer (monochrometer)
103 : 광세기 측정부103: light intensity measuring unit
이하, 첨부된 도면을 참조하여 본 발명에 따른 웨이퍼 회전도포장치 내의 박막 측정장치에 대한 바람직한 일실시예를 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the thin film measuring apparatus in the wafer rotating coating apparatus according to the present invention.
제 2 도를 참조하면, 본 발명에 따른 웨이퍼 회전도포장치 내의 박막 측정장치는 웨이퍼 회전도포장치의 회전부(12)에 의해 소정의 회전속도로 회전되는 웨이퍼(10)상단에 설치되어서 웨이퍼 상으로 광을 입사시키는 광입사부(100)와, 광입사부(100)에서 입사된 광이 웨이퍼(10) 및 도포막(11)을 거쳐 반사되면 이를 수광하도록 웨이퍼(10)상단에 설치된 광수광부(101)와, 광수광부(101)에 연결되어서 광수광부(101)로 반사된 광 중에서 광입사부(100)에서 입사되는 광과 동일한 파장대의 광만을 선택하여 전기적 신호로 변환하는 모노크로메터(102)와, 모노크로메터(102)에 연결되어서 전기적 신호로 변환된 광의 세기에 따라 도포막(11)의 광반사율 또는 두께를 측정하여서 회전부(12)의 회전 속도를 결정하는 광세기 측정부(103)로 이루어진다.Referring to FIG. 2, the thin film measuring apparatus in the wafer rotating coating apparatus according to the present invention is installed on the wafer 10 that is rotated at a predetermined rotational speed by the rotating part 12 of the wafer rotating coating apparatus so that the light onto the wafer is lighted. The light incident part 100 for incident light and the light receiving part 101 provided on the wafer 10 so as to receive the light incident from the light incident part 100 through the wafer 10 and the coating film 11. And a monochromator 102 connected to the light receiving unit 101 to convert only the light having the same wavelength band as the light incident from the light incident unit 100 among the light reflected by the light receiving unit 101 and converting the light into an electrical signal. And an optical intensity measuring unit 103 connected to the monochromator 102 to determine the rotational speed of the rotating unit 12 by measuring the light reflectance or thickness of the coating film 11 according to the intensity of the light converted into an electrical signal. Is made of.
여기서, 광입사부(100)로 입사되는 광은 웨이퍼의 노광에 사용되는 광과 동일한 광이 입사되도록 한다.Here, the light incident on the light incident part 100 causes the same light to be incident on the wafer to be exposed.
이러한 구성으로 이루어진 본 발명에 따른 웨이퍼 회전도포장치 내의 도포막 광반사율 측정장치에 의한 도포막의 광반사율 및 두께 측정을 설명한다.The light reflectance and thickness measurement of the coating film by the coating film light reflectance measuring device in the wafer rotating coating apparatus according to the present invention having such a configuration will be described.
먼저, 소정의 회전속도로 웨이퍼(10)를 회전부(12)가 회전시켜 도포액이 웨이퍼 상에 분사되면 원심력에 의해 밀려 나가면서 웨이퍼(10) 상에 포토레지스트막 또는 반반사막 등의 도포막(11)이 도포되도록 한다.First, when the rotating unit 12 rotates the wafer 10 at a predetermined rotational speed so that the coating liquid is injected onto the wafer, the coating film (such as a photoresist film or a semi-reflective film) on the wafer 10 is pushed out by centrifugal force. 11) to be applied.
그리고, 도포막(11)이 도포되면 광입사부(100)는 웨이퍼 노광에 사용되는 광과 동일한 광을 웨이퍼(10)에 입사시키고, 입사된 광은 도포막(11)을 통과하여 웨이퍼(10)표면에 반사되어 광수광부(101)로 수광된다.Then, when the coating film 11 is applied, the light incident part 100 enters the same light as the light used for the wafer exposure to the wafer 10, and the incident light passes through the coating film 11 and the wafer 10. The light is reflected on the surface and received by the light receiving unit 101.
상기에서 광수광부(101)로 반사되어 수광된 광은 모노크로메터(102)를 통해 광입사부(100)로 입사된 광과 동일한 파장대를 갖는 광(웨이퍼 노광에 사용되는 광)만이 선택되고, 선택된 광은 전기적인 신호로 변환되어 광세기 측정부(103)로 전달된다.The light reflected and received by the light receiving unit 101 is selected only for light having the same wavelength band as the light incident to the light incident unit 100 through the monochromator 102 (light used for wafer exposure), The selected light is converted into an electrical signal and transmitted to the light intensity measuring unit 103.
광세기 측정부(103)는 전달된 전기적인 신호의 세기를 측정하여서 이를 토대로 도포막(11)의 광반사율을 측정하게 된다.The light intensity measuring unit 103 measures the light reflectance of the coating film 11 by measuring the intensity of the transmitted electrical signal.
그리고, 다시 회전부(12)의 회전속도를 증가 또는 감속 등으로 가변시킨 상태에서 도포막(11)을 웨이퍼(10)상에 도포한 다음, 상기의 과정을 반복하여 도포막(11)의 광반사율을 재측정한다.Then, the coating film 11 is applied on the wafer 10 in a state where the rotational speed of the rotating part 12 is changed by increasing or decelerating, etc., and then the above process is repeated to light reflectance of the coating film 11. Remeasure
즉, 회전부(12)의 회전속도를 가변시킴에 따라 원심력에 의한 도포막(11)의 도포두께가 변화되고, 이에 따라 광반사율이 변화되는 것을 회전도포장치 내에서 실시간으로 측정할 수 있게 되는 것이다.That is, as the rotational speed of the rotating part 12 is varied, the coating thickness of the coating film 11 is changed by the centrifugal force, and thus the light reflectance is changed in real time in the rotating coating apparatus. .
이러한 광반사율의 측정은 도포막(11)의 광반사율이 클 경우 전기적인 신호의 세기는 도포막(11)의 광반사율이 작은 경우에 비해 상대적으로 크게 되는 것을 이용한 것이다.The measurement of the light reflectivity is that when the light reflectance of the coating film 11 is large, the intensity of the electrical signal is relatively large compared to the case where the light reflectance of the coating film 11 is small.
이러한 일련의 과정을 반복하면서 도포막(11)의 광반사율을 측정하여서, 측정된 광반사율에서 최소한의 광반사율을 갖도록 하는 회전부(12)의 회전속도를 선택하여서 웨이퍼(10)를 회전시키는 웨이퍼 회전도포 장치의 회전부(12)가 웨이퍼(10)를 회전시키는 회전속도로 결정되도록 한다.By repeating this series of processes, the wafer reflectance is measured by measuring the light reflectance of the coating film 11 to select the rotational speed of the rotating part 12 so as to have a minimum light reflectance from the measured light reflectance. The rotating part 12 of the application apparatus is determined at the rotational speed for rotating the wafer 10.
그리고, 도포막(11)의 두께는 도포막을 통과하면서 두께에 따라 광의 경로가 굴절되는 광의 굴절율 등의 광학상수를 사용하여 측정되도록 한다.The thickness of the coating film 11 is measured by using an optical constant such as a refractive index of light in which a path of light is refracted according to the thickness while passing through the coating film.
상기에서 상술한 바와 같이, 본 발명에 따른 웨이퍼 회전도포장치 내의 도포막 광반사율 측정장치는 회전 도포 장치 내에서 도포막의 광반사율을 측정할 수 있게 되고, 측정된 반사율에 따라 회전부의 회전속도를 조절할 수 있으므로 별도의 반사율 측정장치가 필요없다.As described above, the coating film light reflectance measuring apparatus in the wafer rotating coating apparatus according to the present invention can measure the light reflectance of the coating film in the rotating coating apparatus, and adjust the rotational speed of the rotating unit according to the measured reflectance. This eliminates the need for a separate reflectometer.
따라서, 웨이퍼 이송이 전혀 필요없으며, 광반사율의 측정과정이 단순화되어서 회전도포 공정의 생산 수율을 향상시키게 된다.Thus, no wafer transfer is required, and the light reflectance measurement process is simplified to improve the production yield of the rotary coating process.
또한, 광반사율 측정에 사용되는 광을 웨이퍼 노광과 동일한 광을 사용하여 도포막의 광반사율을 측정함으로써 웨이퍼를 노광하는 노광장치에 사용되는 광과 반사율 측정에 사용되는 광의 파장대 차이에서 발생되는 광반사율 및 두께의 측정오차를 발생시키지 않게 되어서 최적의 노광패턴을 얻을 수 있게 된다.In addition, by measuring the light reflectance of the coating film using the light used for the light reflectance measurement and the same light as the wafer exposure, the light reflectance generated from the wavelength band difference between the light used in the exposure apparatus for exposing the wafer and the light used for the reflectance measurement and The measurement error of the thickness is not generated, so that an optimum exposure pattern can be obtained.
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| KR1019990051438A KR20010047287A (en) | 1999-11-19 | 1999-11-19 | Apparatus which measure a rate of coating film's reflection in wafer coater |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110763657A (en) * | 2019-11-20 | 2020-02-07 | 江苏赛诺格兰医疗科技有限公司 | Photoelectric digital conversion system for reflective material reflectivity test system |
| US10952578B2 (en) | 2018-07-20 | 2021-03-23 | Sharkninja Operating Llc | Robotic cleaner debris removal docking station |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10952578B2 (en) | 2018-07-20 | 2021-03-23 | Sharkninja Operating Llc | Robotic cleaner debris removal docking station |
| CN110763657A (en) * | 2019-11-20 | 2020-02-07 | 江苏赛诺格兰医疗科技有限公司 | Photoelectric digital conversion system for reflective material reflectivity test system |
| CN110763657B (en) * | 2019-11-20 | 2022-05-13 | 江苏赛诺格兰医疗科技有限公司 | Photoelectric digital conversion system for reflective material reflectivity test system |
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