KR20000073954A - Fabricating method of rf switch - Google Patents
Fabricating method of rf switch Download PDFInfo
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- KR20000073954A KR20000073954A KR1019990017570A KR19990017570A KR20000073954A KR 20000073954 A KR20000073954 A KR 20000073954A KR 1019990017570 A KR1019990017570 A KR 1019990017570A KR 19990017570 A KR19990017570 A KR 19990017570A KR 20000073954 A KR20000073954 A KR 20000073954A
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- membrane
- silicon substrate
- sacrificial layer
- lower electrode
- insulating layer
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- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000012528 membrane Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 229920001721 polyimide Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 239000004642 Polyimide Substances 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
Description
본 발명은 고주파 스위치 제조방법에 관한 것으로, 특히 초소형 기계 및 전자시스템(micro electromechanical systems : MEMS)을 이용한 정전형(capacitive type) 고주파 스위치의 제조공정을 단순화하면서 기계적으로 더욱 안정한 구조체로 제작함과 아울러 수율을 높일 수 있는 고주파 스위치 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a high frequency switch, and in particular, to simplify the manufacturing process of the capacitive type high frequency switch using micro electromechanical systems (MEMS), while manufacturing a more stable structure mechanically It relates to a high frequency switch manufacturing method that can increase the yield.
일반적으로, 초소형 기계 및 전자시스템이란 마이크로머신, 마이크로시스템, 초소형 정밀기계 기술 등으로 불리우며, 실리콘 웨이퍼를 가공하여 3차원 구조물로 제작된다.In general, micromechanical and electronic systems are called micromachines, microsystems, microprecision technology, and the like, and are manufactured into three-dimensional structures by processing silicon wafers.
종래 CPW(CoPlanar Waveguide) 고주파 스위치 제조방법을 첨부한 도1a 내지 도1f에 도시한 단계적인 단면도 및 그 평면도를 참조하여 상세히 설명하면 다음과 같다.Referring to the step-by-step cross-sectional view and the plan view shown in Figs. 1A to 1F attached to a conventional CPW (CoPlanar Waveguide) high frequency switch manufacturing method are as follows.
먼저, 도1a에 도시한 바와같이 실리콘기판(1)의 상부에 금속물질을 증착하고 패터닝하여 하부전극(2)을 형성한다.First, as shown in FIG. 1A, a metal material is deposited and patterned on the silicon substrate 1 to form a lower electrode 2.
그리고, 도1b에 도시한 바와같이 상기 하부전극(2)이 형성된 실리콘기판(1)의 상부에 절연층(3)을 증착하고 패터닝한다. 이때, 평면도에서 알 수 있는 바와같이 절연층(3)은 하부전극(2)의 일단면은 완전히 덮고, 하부전극(2)의 타단면은 일부가 노출되도록 형성한다.As shown in FIG. 1B, the insulating layer 3 is deposited and patterned on the silicon substrate 1 on which the lower electrode 2 is formed. At this time, as can be seen in the plan view, the insulating layer 3 is formed so that one end surface of the lower electrode 2 is completely covered, and the other end surface of the lower electrode 2 is partially exposed.
그리고, 도1c에 도시한 바와같이 상기 절연층(3)이 형성된 실리콘기판(1)의 상부에 희생층(4)을 증착하고 패터닝한다. 이때, 평면도에서 알 수 있는 바와같이 희생층(4)은 상기 하부전극(2)을 완전히 덮은 절연층(3)의 단면은 완전히 덮고, 하부전극(2)의 일부가 노출된 절연층(3)의 단면은 일부가 노출되도록 형성하며, 또한 절연층(3) 및 하부전극(2)과 식각선택비가 큰 물질로 형성하여야 한다.As illustrated in FIG. 1C, the sacrificial layer 4 is deposited and patterned on the silicon substrate 1 on which the insulating layer 3 is formed. At this time, as can be seen in the plan view, the sacrificial layer 4 completely covers a cross section of the insulating layer 3 completely covering the lower electrode 2, and the insulating layer 3 in which a part of the lower electrode 2 is exposed. The cross section of the cross section is formed to expose a part of the cross-section of the insulating layer 3 and the lower electrode 2 to be formed of a material having a large etching selectivity.
그리고, 도1d에 도시한 바와같이 상기 희생층(4)이 형성된 실리콘기판(1)의 상부에 폴리이미드(poly-imide)를 스핀-코팅(spin-coating)방법을 통해 증착하고, 300℃ 이상의 온도에서 열처리한 다음 패터닝하여 멤브레인(membrane)(5)을 형성한다. 이때, 하부전극(2) 상의 희생층(4) 상부에 형성되는 폴리이미드는 구동전압을 최소화하기 위하여 제거한다.As shown in FIG. 1D, polyimide is deposited on the silicon substrate 1 on which the sacrificial layer 4 is formed by spin-coating, and at least 300 ° C. Heat treatment at temperature and then patterning to form a membrane (5). At this time, the polyimide formed on the sacrificial layer 4 on the lower electrode 2 is removed to minimize the driving voltage.
그리고, 도1e에 도시한 바와같이 상기 멤브레인(5) 및 희생층(4)의 상부전면에 금속물질을 증착하고 패터닝하여 상부전극(6)을 형성함과 아울러 평면도에서 알 수 있는 바와같이 금속물질의 일부는 상기 일부가 노출된 하부전극(2)과 접속되어 입력신호 배선(7)과 출력신호 배선(8)을 형성한다.In addition, as shown in FIG. 1E, the upper electrode 6 is formed by depositing and patterning a metal material on the upper surface of the membrane 5 and the sacrificial layer 4, and the metal material as shown in the plan view. A part of the part is connected to the lower electrode 2 where the part is exposed to form an input signal line 7 and an output signal line 8.
그리고, 도1f에 도시한 바와같이 상기 희생층(4)을 습식 또는 건식식각으로 제거하여 에어 갭(9)을 형성하고, 증류수로 린스(rinse)한 다음 건조시킨다.As shown in FIG. 1F, the sacrificial layer 4 is removed by wet or dry etching to form an air gap 9, rinsed with distilled water, and then dried.
상기한 바와같은 CPW(CoPlanar Waveguide) 고주파 스위치는 상부전극(6)을 접지에 접속하고, 하부전극(2)에 구동전압 이상의 전압을 인가하면 상부전극(6)과 하부전극(2) 사이에 정전기력이 발생하여 상부전극(6)이 아래로 끌어당겨져 커패시턴스가 가변되므로, 교류 임피던스(impedance)값이 변화된다.As described above, the CoPlanar waveguide (CPW) high frequency switch connects the upper electrode 6 to the ground and applies a voltage equal to or greater than a driving voltage to the lower electrode 2, thereby providing an electrostatic force between the upper electrode 6 and the lower electrode 2. As a result of this, the upper electrode 6 is pulled downward to change the capacitance, so that an alternating current impedance value changes.
그러나, 상기한 바와같은 종래의 고주파 스위치 제조방법은 희생층의 식각에 따라 멤브레인 구조체의 양단부가 분리되어 에어 갭 상에 떠있게 되므로, 스위치를 동작시키는 도중에 구조물이 무너질 수 있는 문제점을 내포하고 있고, 절연층과 상부전극이 모두 친수성물질이므로, 건조시에 모세관 현상에 의해 상부전극과 절연층의 들러붙는 현상(stiction)이 발생할 수 있는 문제점을 내포하고 있어 수율이 저감되는 문제점이 있었다.However, the conventional high frequency switch manufacturing method as described above has a problem in that both ends of the membrane structure are separated and floated on the air gap according to the etching of the sacrificial layer, so that the structure may collapse during the operation of the switch. Since both the insulating layer and the upper electrode are hydrophilic materials, there is a problem in that the yield of the adhesion between the upper electrode and the insulating layer may occur due to a capillary phenomenon during drying.
본 발명은 상기한 바와같은 종래의 문제점을 해결하기 위하여 창안한 것으로, 본 발명의 목적은 제조공정을 단순화하면서 기계적으로 더욱 안정한 구조체를 제작함과 아울러 상부전극과 절연층의 들러붙는 현상을 차단하여 수율을 높일 수 있는 고주파 스위치 제조방법을 제공하는데 있다.The present invention was devised to solve the conventional problems as described above, and an object of the present invention is to simplify the manufacturing process and to produce a more mechanically stable structure and to block the sticking of the upper electrode and the insulating layer. It is to provide a high frequency switch manufacturing method that can increase the yield.
도1a 내지 도1f는 종래 CPW 고주파 스위치 제조방법을 도시한 단계적인 단면도 및 그 평면도.1A to 1F are step-by-step cross-sectional views showing a conventional CPW high frequency switch manufacturing method and a plan view thereof.
도2a 내지 도2f는 본 발명의 일 실시예를 도시한 단계적인 단면도.2A-2F are stepwise cross-sectional views illustrating one embodiment of the present invention.
***도면의 주요부분에 대한 부호의 설명****** Explanation of symbols for main parts of drawing ***
11:실리콘기판 12:하부전극11: silicon substrate 12: lower electrode
13:희생층 14:멤브레인13: Sacrifice 14: Membrane
15:상부전극 18:에어 갭15: upper electrode 18: air gap
상기한 바와같은 본 발명의 목적을 달성하기 위한 고주파 스위치 제조방법은 실리콘기판의 상부에 하부전극을 형성하는 공정과; 상기 하부전극이 형성된 실리콘기판의 상부에 희생층을 형성하는 공정과; 상기 희생층이 형성된 실리콘기판의 상부에 폴리이미드막을 증착하고 패터닝하여 멤브레인을 형성하는 공정과; 상기 하부전극 상의 희생층 상부에 형성된 멤브레인을 식각하여 박막화하는 공정과; 상기 멤브레인을 포함한 실리콘기판의 상부에 상부전극을 형성하는 공정과; 상기 희생층을 식각하여 제거하는 공정을 구비하여 이루어지는 것을 특징으로 한다.The high frequency switch manufacturing method for achieving the object of the present invention as described above comprises the steps of forming a lower electrode on top of the silicon substrate; Forming a sacrificial layer on the silicon substrate on which the lower electrode is formed; Forming a membrane by depositing and patterning a polyimide film on the silicon substrate on which the sacrificial layer is formed; Etching and thinning the membrane formed on the sacrificial layer on the lower electrode; Forming an upper electrode on the silicon substrate including the membrane; And removing the sacrificial layer by etching.
이하, 상기한 바와같은 본 발명에 의한 고주파 스위치 제조방법을 첨부한 도2a 내지 도2e에 도시한 단계적인 단면도를 일 실시예로 하여 상세히 설명한다.Hereinafter, the step-by-step cross-sectional view shown in Figures 2a to 2e with the method for manufacturing a high frequency switch according to the present invention as described above will be described in detail as an embodiment.
먼저, 도2a에 도시한 바와같이 실리콘기판(11)의 상부에 금속물질을 증착하고 패터닝하여 하부전극(12)을 형성한다.First, as shown in FIG. 2A, a metal material is deposited and patterned on the silicon substrate 11 to form a lower electrode 12.
그리고, 도2b에 도시한 바와같이 상기 하부전극(12)이 형성된 실리콘기판(11)의 상부에 희생층(13)을 증착하고 패터닝한다. 이때, 희생층(13)은 상기 하부전극(12)의 일단면은 완전히 덮고, 타단면은 일부가 노출되도록 형성하며, 하부전극(12)의 금속물질과 식각선택비가 큰 물질로 형성하여야 한다.As shown in FIG. 2B, the sacrificial layer 13 is deposited and patterned on the silicon substrate 11 on which the lower electrode 12 is formed. In this case, the sacrificial layer 13 should be formed to completely cover one end surface of the lower electrode 12, and to expose a portion of the other end surface, and be formed of a material having a high etching selectivity with a metal material of the lower electrode 12.
그리고, 도2c에 도시한 바와같이 상기 희생층(13)이 형성된 실리콘기판(11)의 상부에 폴리이미드막을 스핀-코팅방법을 통해 증착하고, 300℃ 이상의 온도에서 열처리한 다음 패터닝하여 멤브레인(14)을 형성한다. 이때, 멤브레인(14)은 상기 노출된 하부전극(12)이 노출되도록 패터닝한다.As shown in FIG. 2C, a polyimide film is deposited on the silicon substrate 11 on which the sacrificial layer 13 is formed by spin-coating, heat-treated at a temperature of 300 ° C. or higher, and then patterned to form a membrane 14. ). In this case, the membrane 14 is patterned to expose the exposed lower electrode 12.
그리고, 도2d에 도시한 바와같이 상기 하부전극(12) 상의 희생층(13) 상부에 형성된 멤브레인(14)을 식각하여 1000Å 정도가 되도록 박막화한다. 이때, 1000Å 정도로 박막화된 멤브레인(14)은 커패시터 절연층의 역할을 한다.As shown in FIG. 2D, the membrane 14 formed on the sacrificial layer 13 on the lower electrode 12 is etched and thinned to about 1000 μs. At this time, the membrane 14 thinned to about 1000Å serves as a capacitor insulating layer.
그리고, 도2e에 도시한 바와같이 상기 멤브레인(14)을 포함한 실리콘기판(11)의 상부에 금속물질을 증착하고 패터닝하여 상부전극(15)을 형성함과 아울러 금속물질의 일부는 상기 일부가 노출된 하부전극(12)과 접속되어 입력신호 배선(미도시)과 출력신호 배선(미도시)을 형성한다.As shown in FIG. 2E, a metal material is deposited and patterned on the silicon substrate 11 including the membrane 14 to form the upper electrode 15, and a part of the metal material is partially exposed. Connected to the lower electrode 12 to form an input signal line (not shown) and an output signal line (not shown).
그리고, 도2f에 도시한 바와같이 상기 희생층(13)을 습식 또는 건식식각으로 제거하여 에어 갭(18)을 형성하고, 증류수로 린스(rinse)한 다음 건조시킨다.As shown in FIG. 2F, the sacrificial layer 13 is removed by wet or dry etching to form an air gap 18, rinsed with distilled water, and then dried.
상기한 바와같은 본 발명에 의한 고주파 스위치 제조방법은 멤브레인 구조체의 일부를 식각하여 커패시터 절연층으로 사용함으로써, 멤브레인 구조체가 분리되지 않고 에어 갭 상에 떠있게 되므로, 기계적으로 더욱 안정한 구조체를 제작함과 아울러 절연막의 증착 및 패터닝공정을 스킵(skip)하여 공정을 단순화할 수 있으며, 멤브레인이 소수성물질이므로, 건조시에 모세관 현상을 방지할 수 있어 제조비용을 줄이고, 수율을 향상시킬 수 있는 효과가 있다.In the method for manufacturing a high frequency switch according to the present invention as described above, by etching a part of the membrane structure and using it as a capacitor insulating layer, the membrane structure is not separated and floats on the air gap, thereby making a mechanically more stable structure. In addition, it is possible to simplify the process by skipping the deposition and patterning process of the insulating film, and since the membrane is a hydrophobic material, it is possible to prevent the capillary phenomenon during drying, thereby reducing the manufacturing cost and improving the yield. .
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Cited By (2)
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---|---|---|---|---|
KR100393768B1 (en) * | 2000-12-20 | 2003-08-02 | 엘지전자 주식회사 | Radio frequency switch and fabricating method thereof |
KR100619110B1 (en) * | 2004-10-21 | 2006-09-04 | 한국전자통신연구원 | Micro-electro mechanical systems switch and a method of fabricating the same |
Family Cites Families (3)
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JP3351180B2 (en) * | 1995-06-12 | 2002-11-25 | 株式会社村田製作所 | Variable capacitance capacitor |
JPH1012722A (en) * | 1996-06-26 | 1998-01-16 | Mitsubishi Electric Corp | Semiconductor device |
KR100237000B1 (en) * | 1996-09-21 | 2000-01-15 | 정선종 | Method for fabricating microstructures by using sacrifical oxide |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100393768B1 (en) * | 2000-12-20 | 2003-08-02 | 엘지전자 주식회사 | Radio frequency switch and fabricating method thereof |
KR100619110B1 (en) * | 2004-10-21 | 2006-09-04 | 한국전자통신연구원 | Micro-electro mechanical systems switch and a method of fabricating the same |
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