KR20000025932A - Deposition device having thickness monitoring function and method thereof - Google Patents

Deposition device having thickness monitoring function and method thereof Download PDF

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Publication number
KR20000025932A
KR20000025932A KR1019980043235A KR19980043235A KR20000025932A KR 20000025932 A KR20000025932 A KR 20000025932A KR 1019980043235 A KR1019980043235 A KR 1019980043235A KR 19980043235 A KR19980043235 A KR 19980043235A KR 20000025932 A KR20000025932 A KR 20000025932A
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South Korea
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film
deposition
thickness
wafer
measuring
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KR1019980043235A
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Korean (ko)
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구경모
하인수
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윤종용
삼성전자 주식회사
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Priority to KR1019980043235A priority Critical patent/KR20000025932A/en
Publication of KR20000025932A publication Critical patent/KR20000025932A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: A deposition device having a thickness monitoring function directly monitors a film thickness, regulates a deposition condition according to the result, obtains a film of a desired thickness, and reduces a working loss. CONSTITUTION: A deposition device having a thickness monitoring function deposits a film on a wafer(24). A part(20) deposits a film on the wafer(24), and measures a thickness of a deposited film. A film deposition controller(30) receives a film thickness data measured by the measuring part(20), maintains a deposition condition of the measuring part(20), or varies the deposition condition. The wafer(24) has a site(25) for measuring a film thickness. Thereby, the deposition device directly monitors a film thickness, regulates a deposition condition according to the result, obtains a film of a desired thickness, and reduces a working loss.

Description

두께 모니터링 기능을 갖는 증착 설비 및 그 증착 방법(DEPOSITION APPARATUS WITH ABILITY OF THICKNESS MONITORING AND THE METHOD OF THAT)DEPOSITION APPARATUS WITH ABILITY OF THICKNESS MONITORING AND THE METHOD OF THAT

본 발명은 막 증착 설비 및 증착 방법에 관한 것으로, 좀 더 구체적으로는 두께 모니터링 기능을 갖는 증착 설비 및 그 증착 방법에 관한 것이다.The present invention relates to a film deposition equipment and a deposition method, and more particularly to a deposition equipment having a thickness monitoring function and a deposition method thereof.

금속막을 증착 하면서 적당한 두께를 관리하기 위해서는, 먼저 모니터 웨이퍼(monitor wafer)를 사용하여 금속막의 두께나 비저항 값을 모니터링(monitoring)한다. 그리고, 보상값을 계산하여 증착 파우어(deposition power) 및 증착 시간(deposition time)을 변경하여 증착 공정을 진행하는 것이 일반적인 모델이다.In order to manage the proper thickness while depositing the metal film, a monitor wafer is first used to monitor the thickness or resistivity of the metal film. In addition, it is a general model to perform a deposition process by calculating a compensation value and changing deposition power and deposition time.

그러나, 경제적인 측면에서 이와 같은 모델을 이용하여 증착 공정을 진행할 경우, 모니터 웨이퍼를 분리하여 제작하고 관리함에 따라 가격 손실 및 시간 손실이 발생된다. 또한, 엔지니어(engineer)나 작업자가 직접 매뉴얼(manual)로 보상치를 계산함으로써 인력 손실 및 런(run) 사고 발생 가능성이 많게 된다.However, economically, when the deposition process is performed using such a model, cost loss and time loss occur as the monitor wafer is separately manufactured and managed. In addition, an engineer or operator directly calculates a compensation value manually, thereby increasing the possibility of manpower loss and run accidents.

현재 모든 스퍼터링(sputtering)과 같은 박막 증착 기술인 PVD(physical vapor deposition) 에서는 모니터 웨이퍼를 사용하여 정기적으로 해당 공정 조건에 맞게 막의 두께 및 비저항 등을 모니터링 하기 위한 공정이 수행되어 많은 수의 웨이퍼가 소모되고 있다.At present, PVD (Physical Vapor Deposition), a thin film deposition technique such as sputtering, uses a monitor wafer to periodically monitor the film thickness and resistivity according to the process conditions, and consumes a large number of wafers. have.

본 발명은 상술한 제반 문제점을 해결하기 위해 제안된 것으로서, 런 상에서 직접 막의 두께를 모니터링하고, 그 결과에 따라 증착 조건을 조절함으로써, 모니터 웨이퍼를 사용하지 않고 원하는 두께의 막을 얻을 수 있고, 따라서 작업 손실을 줄일 수 있는 모니터링 기능을 갖는 증착 설비 및 그 증착 방법을 제공함에 그 목적이 있다.The present invention has been proposed to solve the above-mentioned problems, and by monitoring the thickness of the film directly on the run and adjusting the deposition conditions according to the result, it is possible to obtain a film of a desired thickness without using a monitor wafer, and thus work It is an object of the present invention to provide a deposition apparatus and a deposition method having a monitoring function that can reduce the loss.

본 발명의 다른 목적은 증착 설비를 완전히 자동화 할 수 있는 모니터링 기능을 갖는 증착 설비 및 그 증착 방법을 제공함에 있다.Another object of the present invention is to provide a deposition apparatus having a monitoring function capable of fully automating the deposition apparatus and a deposition method thereof.

도 1은 본 발명의 실시예에 따른 두께 모니터링 기능을 갖는 증착 설비를 개략적으로 보여주는 도면;1 shows schematically a deposition facility with a thickness monitoring function according to an embodiment of the invention;

도 2는 본 발명의 실시예에 따른 두께 모니터링 기능을 갖는 증착 설비를 사용한 증착 방법을 차례로 보여주는 플로우 차트(flowchart).Figure 2 is a flow chart (flowchart) showing a deposition method using a deposition equipment having a thickness monitoring function according to an embodiment of the present invention in sequence.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

10 : 두께 모니터링 기능을 갖는 증착 설비10: deposition equipment with thickness monitoring function

20 : 막 증착 및 측정 수단 22 : 막 두께 측정 수단20: film deposition and measuring means 22: film thickness measuring means

24 : 웨이퍼 25 : 측정 사이트(measuring site)24 wafer 25 measuring site

30 : 막 증착 제어 수단30 film deposition control means

(구성)(Configuration)

상술한 목적을 달성하기 위한 본 발명에 의하면, 모니터링 기능을 갖는 증착 설비는, 웨이퍼(24) 상에 막을 증착 하는 증착 설비에 있어서, 상기 웨이퍼(24) 상에 막을 증착하고, 증착된 막의 두께를 측정하는 막 증착 및 측정 수단(20); 및 상기 막 증착 및 측정 수단(20)에서 측정된 막 두께 데이터를 입력받아 막 증착 및 측정 수단(20)의 증착 조건을 유지시키거나 변화시키는 막 증착 제어 수단(30)을 포함한다.According to the present invention for achieving the above object, in a deposition apparatus having a monitoring function, in a deposition apparatus for depositing a film on the wafer 24, the film is deposited on the wafer 24, and the thickness of the deposited film is increased. Film deposition and measurement means 20 for measuring; And a film deposition control means 30 which receives the film thickness data measured by the film deposition and measurement means 20 to maintain or change the deposition conditions of the film deposition and measurement means 20.

상술한 목적을 달성하기 위한 본 발명에 의하면, 모니터링 기능을 갖는 증착 설비의 증착 방법은, 막 증착 및 측정 수단(20)과, 막 증착 제어 수단(30)을 갖는 증착 설비를 사용하여 웨이퍼(24) 상에 막을 증착 하는 방법에 있어서, 상기 막 증착 및 측정 수단(20)을 사용하여 상기 웨이퍼(24) 상에 물질막을 증착하고, 이 물질막의 두께를 측정하는 단계(S14, S16); 상기 측정된 물질막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 피드백(feedback) 하는 단계(S18); 및 상기 측정된 물질막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 저장되어 있는 기준 두께 데이터와 비교하여(S20), 상기 막 증착 및 측정 수단(20)의 막 증착 조건을 유지 또는 보정하는 단계(S22, S24)를 포함한다.According to the present invention for achieving the above object, a deposition method of a deposition apparatus having a monitoring function includes a wafer 24 using a deposition apparatus having a film deposition and measurement means 20 and a film deposition control means 30. A method of depositing a film on a substrate, comprising: depositing a material film on the wafer 24 using the film deposition and measuring means (20) and measuring the thickness of the material film (S14, S16); Feeding back measured thickness data of the material film to the film deposition control means (S18) (S18); And comparing the thickness data of the measured material film with reference thickness data stored in the film deposition control means 30 (S20) to maintain or correct film deposition conditions of the film deposition and measurement means 20. It includes the step (S22, S24).

이 방법의 바람직한 실시예에 있어서, 상기 물질막 증착 단계(S14) 전에, 상기 웨이퍼(24) 상에 형성된 하부막의 두께를 측정하는 단계(S10); 및 상기 측정된 하부막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 피드백 하는 단계(S12)를 더 포함할 수 있고, 상기 하부막 두께 데이터를 기준으로 상기 물질막의 두께 데이터를 산출한다.In a preferred embodiment of the method, before the material film deposition step (S14), the step (S10) of measuring the thickness of the lower film formed on the wafer (24); And feeding back the measured thickness data of the lower layer to the film deposition control means 30 (S12), and calculating thickness data of the material layer based on the lower layer thickness data.

(작용)(Action)

도 1을 참조하면, 본 발명의 실시예에 따른 신규한 모니터링 기능을 갖는 증착 설비 및 그 증착 방법은, 두께 모니터링 기능을 갖는 증착 설비를 사용하여 웨이퍼 상의 측정 사이트를 통해 증착 전후의 막 두께를 산출함으로써, 두께 측정 설비의 사용에 따른 시간 손실 및 모니터 웨이퍼 손실을 혁신적으로 줄일 수 있다. 그리고, 런 상에서 막 두께를 바로 모니터링 하여 막 증착 조건을 유지 내지 보정하는 막 증착 제어 수단에 피드백 함으로써, 정확한 실측치를 얻을 수 있고, 제품에 대한 특성을 극대화시킬 수 있으며, 충분한 공정 마진을 확보할 수 있다. 또한, 생산 효율을 증대시키고 인력 손실을 줄일 수 있으며, 따라서 큰 비용 절감을 이룰 수 있다.Referring to FIG. 1, a deposition apparatus having a novel monitoring function and a deposition method according to an embodiment of the present invention calculate a film thickness before and after deposition through a measurement site on a wafer using a deposition apparatus having a thickness monitoring function. In this way, time loss and monitor wafer loss due to the use of the thickness measuring equipment can be reduced. By directly monitoring the film thickness on the run and feeding back to the film deposition control means for maintaining or correcting the film deposition conditions, accurate measurements can be obtained, the product characteristics can be maximized, and sufficient process margin can be secured. have. In addition, it is possible to increase production efficiency and reduce manpower loss, thus resulting in significant cost savings.

(실시예)(Example)

이하, 도 1 및 도 2를 참조하여 본 발명의 실시예를 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 and 2.

도 1은 본 발명의 실시예에 따른 두께 모니터링 기능을 갖는 증착 설비를 개략적으로 보여주는 도면이다.1 is a view schematically showing a deposition apparatus having a thickness monitoring function according to an embodiment of the present invention.

도 1을 참조하면, 본 발명의 실시예에 따른 두께 모니터링 기능을 갖는 증착 설비(10)는, 막 증착 및 측정 수단(20)과, 막 증착 제어 수단(30)을 포함한다. 상기 막 증착 및 측정 수단(20)은 막 증착 설비에 막 두께 측정 수단(22)이 추가된 것이다. 이와 같이, 막 두께 측정 수단(22)의 추가로 생산 라인 내에 막 두께 측정 장치를 별도로 운영할 필요가 없게 되고, 따라서 설비의 레이아웃(layout)시 많은 공간을 확보하게 된다.Referring to FIG. 1, a deposition apparatus 10 having a thickness monitoring function according to an embodiment of the present invention includes a film deposition and measurement means 20 and a film deposition control means 30. The film deposition and measuring means 20 is a film thickness measuring means 22 added to the film deposition equipment. In this way, the addition of the film thickness measuring means 22 eliminates the need to operate the film thickness measuring apparatus separately in the production line, thus securing a lot of space in the layout of the equipment.

상기 막 증착 및 측정 수단(20) 내에 막이 증착될 웨이퍼(24)가 장착되는데, 상기 웨이퍼(24)는 막 증착 전후에 막 두께가 측정되는 사이트(measuring site)(25)를 갖는다.In the film deposition and measuring means 20 is mounted a wafer 24 on which a film is to be deposited, which has a measuring site 25 whose film thickness is measured before and after film deposition.

상기 막 증착 제어 수단(30)은 상기 막 증착 및 측정 수단(20)으로부터 막 두께 데이터를 입력받고, 상기 막 증착 및 측정 수단(20)의 증착 조건을 유지 또는 보정하는 기능을 갖는다.The film deposition control means 30 has a function of receiving film thickness data from the film deposition and measurement means 20 and maintaining or correcting deposition conditions of the film deposition and measurement means 20.

상술한 바와 같은 모니터링 기능을 갖는 증착 설비를 사용한 증착 방법은 다음과 같다.The deposition method using the deposition apparatus having the monitoring function as described above is as follows.

참고로, 종래의 PVD 설비를 이용한 증착 방법은 디개싱(degassing) - 증착(deposition) - 웨이퍼 쿨링(wafer cooling)의 순서로 진행된다.For reference, a deposition method using a conventional PVD facility is performed in the order of degassing-deposition-wafer cooling.

도 2에 있어서, 본 발명에 따른 모니터링 기능을 갖는 증착 설비를 사용한 증착 방법은 먼저, 아웃개싱 소오스(outgassing source)를 제거하는 디개싱이 수행된다. 이때, 상기 막 두께 측정 수단(22)을 통해 웨이퍼(24) 내 측정 사이트(25) 상의 먼저 증착된 하부막의 두께가 측정된다.(S10) 이와 같이 측정된 하부막의 두께 데이터가 상기 막 증착 제어 수단(30)에 피드백(feedback) 되어 저장된다.(S12)In Fig. 2, in the deposition method using the deposition apparatus having the monitoring function according to the present invention, first, degassing to remove the outgassing source is performed. In this case, the thickness of the previously deposited lower layer on the measurement site 25 in the wafer 24 is measured through the film thickness measuring unit 22 (S10). It is fed back to (30) and stored. (S12)

상기 웨이퍼(24) 상에 상부막 예를 들어, PVD 방법으로 금속막이 증착된다.(S14)A metal film is deposited on the wafer 24 by, for example, a PVD method (S14).

상기 금속막 증착 후 콘택 필링(contact filling) 공정이 더 수행될 수 있다.After the metal film is deposited, a contact filling process may be further performed.

다음, 웨이퍼 쿨링이 수행된다. 이때, 상기 막 두께 측정 수단(22)을 통해 상기 측정 사이트(25)에 대한 상하부막의 두께가 측정된다.(S16) 이와 같이, 상기 하부막과 상부막의 두께가 함께 측정된 후, 측정된 상하부막의 두께 데이터가 상기 막 증착 제어 수단(30)에 피드백 된다.(S18) 그러면, 상기 막 증착 제어 수단(30)은 상기 측정된 상하부막의 두께 데이터와 이미 저장되어 있는 상기 하부막의 두께 데이터의 차이를 계산하여 상기 상부막의 두께를 산출하게 된다.Next, wafer cooling is performed. At this time, the thickness of the upper and lower layers with respect to the measurement site 25 is measured by the film thickness measuring means 22. (S16) As described above, after the thicknesses of the lower layer and the upper layer are measured together, The thickness data is fed back to the film deposition control means 30 (S18). Then, the film deposition control means 30 calculates a difference between the measured thickness data of the upper and lower layers and the thickness data of the lower layer already stored. The thickness of the upper layer is calculated.

다음, 상기 막 증착 제어 수단(30)은 상기 상부막의 두께를 이미 저장되어 있는 상부막의 기준 두께와 비교한다.(S20) 이때, 상기 상부막이 두께가 기준 두께와 같은 경우, 상기 막 증착 및 측정 수단(20)의 공정 파우어 및 공정 시간이 후속 웨이퍼 즉, 생산 웨이퍼(product wafer)에 대해서도 그대로 적용되도록 한다.(S22)Next, the film deposition control means 30 compares the thickness of the upper film with the reference thickness of the upper film that is already stored. (S20) In this case, when the thickness of the upper film is equal to the reference thickness, the film deposition and measuring means. Process powder and process time of (20) is to be applied to the subsequent wafer, that is, the product wafer (product wafer) as it is (S22).

반면, 상기 상부막의 두께가 기준 두께와 다른 경우 즉, 상부막의 두께가 기준 두께보다 작거나 큰 경우, 상기 막 증착 제어 수단(30)은 상기 막 증착 및 측정 수단(20)에 보정된 공정 파우어 및 공정 시간을 입력하여 후속 웨이퍼에 대한 막 증착 공정이 수행되도록 한다.(S24)On the other hand, when the thickness of the upper film is different from the reference thickness, that is, when the thickness of the upper film is smaller or larger than the reference thickness, the film deposition control means 30 is a process power corrected in the film deposition and measurement means 20 and By inputting the process time, the film deposition process for the subsequent wafer is performed.

상술한 바와 같이, 본 발명의 핵심은 막 증착 및 측정 수단(20)으로서, 막의 두께를 모니터링 하는 기능이 추가된 PVD 설비와, 모니터링 데이터를 입력받아 증착 조건을 유지 및 보정하는 막 증착 제어 수단(30) 예를 들어, 메인 컴퓨터(main computer)를 구비하고, 웨이퍼(24) 상에 두께를 측정하기 위한 사이트(25)를 형성함으로써, 막 두께 측정 시간 및 모니터 웨이퍼 손실을 줄이는데 있다.As described above, the core of the present invention is a film deposition and measurement means 20, a PVD facility having a function of monitoring the thickness of a film, and a film deposition control means for maintaining and correcting deposition conditions by receiving monitoring data ( 30) For example, by providing a main computer and forming a site 25 for measuring thickness on the wafer 24, the film thickness measurement time and monitor wafer loss are reduced.

본 발명은 두께 모니터링 기능을 갖는 증착 설비를 사용하여 웨이퍼 상의 측정 사이트를 통해 증착 전후의 막 두께를 산출함으로써, 두께 측정 설비의 사용에 따른 시간 손실 및 모니터 웨이퍼 손실을 혁신적으로 줄일 수 있는 효과가 있다.The present invention has the effect of innovatively reducing time loss and monitor wafer loss due to the use of the thickness measuring equipment by calculating the film thickness before and after deposition through the measurement site on the wafer using a deposition equipment having a thickness monitoring function. .

그리고, 본 발명은 런 상에서 막 두께를 바로 모니터링 하여 막 증착 조건을 유지 내지 보정하는 막 증착 제어 수단에 피드백 함으로써, 정확한 실측치를 얻을 수 있고, 제품에 대한 특성을 극대화시킬 수 있으며, 충분한 공정 마진을 확보할 수 있는 효과가 있다.In addition, the present invention can be obtained by accurately monitoring the film thickness on the run to feed back the film deposition control means for maintaining or correcting the film deposition conditions, thereby obtaining accurate measurements, maximizing the characteristics of the product, and sufficient process margins. There is an effect that can be secured.

또한, 본 발명은 생산 효율을 증대시키고 인력 손실을 줄일 수 있으며, 따라서 큰 비용 절감을 이룰 수 있는 효과가 있다.In addition, the present invention can increase the production efficiency and reduce the manpower loss, thus there is an effect that can achieve a large cost savings.

Claims (4)

웨이퍼(24) 상에 막을 증착 하는 증착 설비에 있어서,In a deposition facility for depositing a film on a wafer 24, 상기 웨이퍼(24) 상에 막을 증착하고, 증착된 막의 두께를 측정하는 수단(20); 및Means (20) for depositing a film on the wafer (24) and measuring the thickness of the deposited film; And 상기 막 증착 및 측정 수단(20)에서 측정된 막 두께 데이터를 입력받아 막 증착 및 측정 수단(20)의 증착 조건을 유지시키거나 변화시키는 막 증착 제어 수단(30)을 포함하는 것을 특징으로 하는 두께 모니터링 기능을 갖는 증착 설비.And a film deposition control means 30 which receives the film thickness data measured by the film deposition and measurement means 20 to maintain or change the deposition conditions of the film deposition and measurement means 20. Deposition equipment with monitoring function. 제 1 항에 있어서,The method of claim 1, 상기 웨이퍼(24)는 막 두께를 측정하기 위한 사이트(site)(25)를 갖는 것을 특징으로 하는 두께 모니터링 기능을 갖는 증착 설비.And the wafer (24) has a site (25) for measuring film thickness. 막 증착 및 측정 수단(20)과, 막 증착 제어 수단(30)을 갖는 증착 설비를 사용하여 웨이퍼(24) 상에 막을 증착 하는 방법에 있어서,In a method of depositing a film on a wafer 24 using a deposition facility having a film deposition and measurement means 20 and a film deposition control means 30, 상기 막 증착 및 측정 수단(20)을 사용하여 상기 웨이퍼(24) 상에 물질막을 증착하고, 이 물질막의 두께를 측정하는 단계(S14, S16);Depositing a material film on the wafer (24) using the film deposition and measuring means (20) and measuring the thickness of the material film (S14, S16); 상기 측정된 물질막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 피드백(feedback) 하는 단계(S18); 및Feeding back measured thickness data of the material film to the film deposition control means (S18) (S18); And 상기 측정된 물질막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 저장되어 있는 기준 두께 데이터와 비교하여(S20), 상기 막 증착 및 측정 수단(20)의 막 증착 조건을 유지 또는 보정하는 단계(S22, S24)를 포함하는 것을 특징으로 하는 두께 모니터링 기능을 갖는 증착 설비의 증착 방법.By comparing the thickness data of the measured material film with reference thickness data stored in the film deposition control means 30 (S20), maintaining or correcting film deposition conditions of the film deposition and measurement means 20 Deposition method of a deposition facility having a thickness monitoring function comprising the step (S22, S24). 제 3 항에 있어서,The method of claim 3, wherein 상기 물질막 증착 단계(S14) 전에, 상기 웨이퍼(24) 상에 형성된 하부막의 두께를 측정하는 단계(S10); 및Measuring the thickness of the lower layer formed on the wafer (24) before the material film deposition step (S14); And 상기 측정된 하부막에 대한 두께 데이터를 상기 막 증착 제어 수단(30)에 피드백 하는 단계(S12)를 더 포함하고,And feeding back the thickness data of the measured lower layer to the film deposition control means 30 (S12), 상기 하부막 두께 데이터를 기준으로 상기 물질막의 두께 데이터를 산출하는 것을 특징으로 하는 두께 모니터링 기능을 갖는 증착 설비의 증착 방법.And calculating thickness data of the material film based on the lower film thickness data.
KR1019980043235A 1998-10-15 1998-10-15 Deposition device having thickness monitoring function and method thereof KR20000025932A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474226B1 (en) * 2001-03-30 2005-03-08 가부시끼가이샤 도시바 Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device
KR100581320B1 (en) * 2001-08-31 2006-05-22 가부시끼가이샤 도시바 Method, apparatus and system for manufacturing semiconductor device, and cleaning method of semiconductor manufacturing apparatus
KR100622223B1 (en) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 Deposition system using noise canceller and method for controlling the same
KR100622224B1 (en) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 Deposition system using low pass filter
US8057648B2 (en) 2005-01-06 2011-11-15 Samsung Mobile Display Co., Ltd. Deposition system using noise canceller and its method of control
CN114262880A (en) * 2021-12-16 2022-04-01 上海华虹宏力半导体制造有限公司 Method for automatically regulating and controlling thickness of deposited film of LPCVD furnace tube

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100474226B1 (en) * 2001-03-30 2005-03-08 가부시끼가이샤 도시바 Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device
KR100581320B1 (en) * 2001-08-31 2006-05-22 가부시끼가이샤 도시바 Method, apparatus and system for manufacturing semiconductor device, and cleaning method of semiconductor manufacturing apparatus
KR100622223B1 (en) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 Deposition system using noise canceller and method for controlling the same
KR100622224B1 (en) * 2005-01-06 2006-09-14 삼성에스디아이 주식회사 Deposition system using low pass filter
US8057648B2 (en) 2005-01-06 2011-11-15 Samsung Mobile Display Co., Ltd. Deposition system using noise canceller and its method of control
CN114262880A (en) * 2021-12-16 2022-04-01 上海华虹宏力半导体制造有限公司 Method for automatically regulating and controlling thickness of deposited film of LPCVD furnace tube
CN114262880B (en) * 2021-12-16 2023-11-17 上海华虹宏力半导体制造有限公司 Method for automatically regulating and controlling deposition film thickness of LPCVD furnace tube

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