KR19980043947U - Etching end point detection device of semiconductor etching equipment - Google Patents
Etching end point detection device of semiconductor etching equipment Download PDFInfo
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- KR19980043947U KR19980043947U KR2019960057071U KR19960057071U KR19980043947U KR 19980043947 U KR19980043947 U KR 19980043947U KR 2019960057071 U KR2019960057071 U KR 2019960057071U KR 19960057071 U KR19960057071 U KR 19960057071U KR 19980043947 U KR19980043947 U KR 19980043947U
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- point detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32972—Spectral analysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
본 고안은 반도체 식각장비의 식각종료점 검출장치에 관한 것으로, 종래에는 그 장비의 내벽 재질이 알루미늄인데 반하여 식각종료점 검출장치의 재질은 상기 알루미늄 보다 열전달이 낮은 석영으로 구성되므로, 웨이퍼의 식각공정중에 발생되는 폴리머가 상기 식각종료점 검출장치에 더 많이 증착되어 광 시크널의 검출을 방해하게 되는 문제점이 있었던 바, 본 고안에서는 상기 식각종료점 검출장치를 상기 챔버의 내벽재질과 동일재질로 하고, 그 외표면에 서멀 테이프를 부착하여 식각공정중에 발생되는 폴리머의 증착을 감소시킴으로써, 광 시크널을 안정적으로 관리할 수 있는 효과가 있다.The present invention relates to an etching end point detection device of a semiconductor etching equipment, conventionally the inner wall material of the equipment is aluminum, whereas the material of the etching end point detection device is made of quartz lower heat transfer than the aluminum, so it occurs during the wafer etching process There is a problem that the more polymer is deposited on the etching end point detection device to interfere with the detection of the optical signal. In the present invention, the etching end point detection device is made of the same material as the inner wall material of the chamber. By adhering the thermal tape to reduce the deposition of the polymer generated during the etching process, there is an effect that the optical signal can be managed stably.
Description
본 고안은 반도체 식각장비의 식각종료점 검출장치에 관한 것으로, 특히 식각처리실(이하, 챔버(Chamber) 로 통칭함)의 내벽재질과 식각종료점 검출장치의 재질을 동일재질로 하여 식각공정중에 발생되는 폴리머가 상기 검출장치에 과도하게 증착되는 것을 방지하도록 하는 반도체 식각장비의 식각종료점 검출장치에 관한 것이다.The present invention relates to an etching end point detection device of a semiconductor etching equipment, in particular, the polymer generated during the etching process using the inner material of the etching process chamber (hereinafter referred to as chamber) and the material of the etching end point detection device as the same material The present invention relates to an etching end point detection apparatus of a semiconductor etching apparatus to prevent excessive deposition on the detection apparatus.
일반적인 반도체의 식각장비에 있어서 챔버(1)는 도 1에 도시된 바와 같이, 그 내부에 웨이퍼가 안착되기 위한 웨이퍼 리프트(Wafer Lift)(2)가 구비되고, 그 웨이퍼 리프트(2)의 일측 상단에는 소정의 가스가 주입되기 위한 가스 피드스로우(Gas Feedthrough)(3)가 설치되며, 상기 챔버(1)의 일측 벽면에는 식각종료점 검출장치(EPD ; End Point Direction)(도 2에 도시)(10)이 장착되기 위한 뷔 포인트(4)가 형성되어 있다.In the etching apparatus of a general semiconductor, as shown in FIG. 1, the chamber 1 is provided with a wafer lift 2 for mounting a wafer therein, and an upper end of one side of the wafer lift 2. The gas feedthrough (3) is installed in a predetermined gas is injected, one end surface of the chamber (1) of the end point direction (EPD; End Point Direction) (EPD) (Fig. 2) (10) V) 4 is provided for mounting.
상기 식각종료점 검출장치(10)는 도 2에 도시된 바와 같이, 그 케이스(10a)는 열전도율이 낮은 석영 재질의 원통형으로 형성되고, 그 원통형 케이스(10a)의 내부에는 소정의 광섬유(11)가 개재되어 필름이 반응하면서 발생되는 부산물의 파장을 검지하여 부산물의 양을 측정하도록 되어 있다.As shown in FIG. 2, the etching end point detecting device 10 is formed in a cylindrical shape of quartz material having a low thermal conductivity, and a predetermined optical fiber 11 is formed inside the cylindrical case 10a. By interposing the film by detecting the wavelength of the by-product generated by the reaction is to measure the amount of the by-product.
도면중 미설명 부호인 5는 캐소드, 6는 뚜껑, 7은 뚜껑 0-링, 8은 슬릿 밸브 포트(Slit Valve Port), 9은 보텀 커버이다.In the drawings, reference numeral 5 denotes a cathode, 6 a lid, 7 a lid 0-ring, 8 a slit valve port, and 9 a bottom cover.
상기와 같이 구성된 종래의 식각장비에서는, 상기 웨이퍼 리프트(2)에 의해 웨이퍼(미도시)가 안착되면 뚜겅이 닫히고, 이어서 필름의 종류에 따라 소정의 가스가 가스 피드스로우(3)를 통해 챔버(1)의 내부로 유입되어 식각공정이 진행되며, 그 식각공정이 진행되는 중에 발생되는 폴리머가 챔버(1)의 내벽에는 증착하게 되는데, 이때 상기 식각종료점 검출장치(10)는 광 섬유(11)를 이용하여 식각공정중에 발생되는 폴리머의 파장을 검출하고, 그 검출되는 파장으로 발생되는 폴리머의 양을 감지하게 되는 것이었다.In the conventional etching apparatus configured as described above, when the wafer (not shown) is seated by the wafer lift 2, the lid is closed, and according to the type of film, a predetermined gas passes through the gas feed throw 3 to the chamber ( 1) is introduced into the inside of the etching process is performed, the polymer generated during the etching process is deposited on the inner wall of the chamber 1, wherein the etching end point detection device 10 is an optical fiber (11) It was used to detect the wavelength of the polymer generated during the etching process, and to detect the amount of the polymer generated by the detected wavelength.
그러나, 상기와 같은 종래의 식각장비에서는, 그 장비의 내벽 재질이 알루미늄인데 반하여 식각종료점 검출장치(10)의 재질은 상기 알루미늄 보다 열전달이 낮은 석영으로 구성되므로, 웨이퍼의 식각공정중에 발생되는 폴리머가 상기 식각종료점 검출장치(10)에 더 많이 증착되어 광 시크널의 검출을 방해하게 되는 문제점이 있었다.However, in the conventional etching equipment as described above, since the inner wall material of the equipment is aluminum, the material of the etching end point detection device 10 is made of quartz having lower heat transfer than the aluminum, so that the polymer generated during the etching process of the wafer There was a problem that the more the deposition is detected on the etching end point detection device 10 to interfere with the detection of the optical signal.
따라서, 본 고안의 목적은 상기 식각공정중에 발생되는 폴리머가 식각종료점 검출장치에 과도하게 증착되는 것을 방지하여 광 시크널을 안정적으로 관리할 수 있는 반도체 식각장비의 식각종료점 검출장치를 제공하는데 있다.Accordingly, an object of the present invention is to provide an etching end point detection apparatus for semiconductor etching equipment, which can stably manage an optical signal by preventing the polymer generated during the etching process from being excessively deposited on the etching end point detection apparatus.
도 1은 종래의 식각장비에 있어서, 식각처리실을 보인 사시도.1 is a perspective view showing an etching process chamber in a conventional etching equipment.
도 2는 종래의 식각장비에 있어서, 식각종료점 검출장치를 보인 사시도.Figure 2 is a perspective view of the etching end point detection apparatus in the conventional etching equipment.
도 3은 본 고안에 의한 식각장비에 있어서, 식각종료점 검출장치를 보인 사시도.Figure 3 is a perspective view of the etching end point detection device in the etching equipment according to the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10' : 식각종료점 검출장치12 : 서멀 테이프10 ': etching end point detection device 12: thermal tape
10a' : 알루미늄 재질의 식각종료점 검출장치 외표면10a ': Outer surface of aluminum end point detector
이와 같은 본 고안의 목적을 달성하기 위하여, 챔버내에서 식각공정중에 발생되는 폴리머의 양을 검출하기 위하여 상기 챔버의 뷔 포인트에 결합되는 반도체 식각장비의 식각종료점 검출장치에 있어서, 그 재질을 챔버내벽의 재질과 동일재질로 형성함을 특징으로 하는 반도체 식각장비의 식각종료점 검출장치가 제공된다.In order to achieve the object of the present invention, in the etching end point detection device of the semiconductor etching equipment coupled to the bead point of the chamber to detect the amount of polymer generated during the etching process in the chamber, the material of the chamber inner wall Provided is an etching end point detection device for a semiconductor etching apparatus, characterized in that formed of the same material as the material.
이하, 본 고안에 의한 반도체 식각장비의 식각종료점 검출장치를 첨부도면에 도시된 일실시예에 의거하여 상세하게 설명한다.Hereinafter, an apparatus for detecting an end point of etching of a semiconductor etching apparatus according to the present invention will be described in detail with reference to an embodiment shown in the accompanying drawings.
본 고안에 의한 식각종료점 검출장치는 도 3에 도시된 바와 같이, 그 형상은 종래와 동일하고 대신에 재질을 석영에서 알루미늄으로 대체한 것으로, 이는 상기 쳄버의 내벽이 알루미늄으로 형성된 것에 비추어 그 챔버의 내벽과 식각종료점 검출장치(10')의 외표면 부위(10a)를 동일 재질인 알루미늄으로 형성함으로써, 상기의 식각공정중에 발생되는 폴리머가 균일하게 증착되도록 하는 것이고, 더욱이 알루미늄은 석영에 비해 그 열전도율이 높아 내부에 증착되는 폴리머의 양을 감소시키게 되는 것이다.Etch end point detection device according to the present invention, as shown in Figure 3, the shape is the same as the conventional instead of a material from quartz to aluminum, which is in the light of the inner wall of the chamber is formed of aluminum of the chamber By forming the inner wall and the outer surface portion 10a of the etching end point detecting device 10 'with aluminum of the same material, the polymer generated during the etching process is deposited uniformly. Moreover, aluminum has a higher thermal conductivity than that of quartz. This increases the amount of polymer deposited inside.
이로써, 상기 식각종료점 검출장치(10')의 내부에 폴리머가 적게 증착되므로 광섬유(11'), 즉 광 시그널에 에러가 방지된다.As a result, less polymer is deposited inside the etch stop device 10 ', thereby preventing errors in the optical fiber 11', that is, the optical signal.
본 고안에 의한 변형예가 있는 경우는 다음과 같다.If there is a modification according to the present invention is as follows.
즉, 전술한 일례에서는 상기 식각종료점 검출장치의 외표면 부위(10a)를 챔버내벽의 재질인 알루미늄으로 하는 것이나, 이는 챔버내벽과 식각종료점 검출장치의 열전도율이 동일하게 되므로 식각공정중에 발생되는 폴리머의 증착율도 동일하게 된다.That is, in the above-described example, the outer surface portion 10a of the etching end point detection device is made of aluminum, which is a material of the inner wall of the chamber. The deposition rate is also the same.
따라서 상기 식각종료점 검출장치(10')의 폴리머 증착율을 감소시키기 위하여는 그 검출장치(10')의 표면온도를 상승시켜야 하는데, 이를 위해 상기 검출장치(10')의 외표면에 서멀 테이프(Thermal Tape)(12)를 부착하는 것이다.Therefore, in order to reduce the polymer deposition rate of the etching end point detection device 10 ', the surface temperature of the detection device 10' must be increased. For this purpose, a thermal tape is applied to the outer surface of the detection device 10 '. Tape (12).
이상에서 설명한 바와 같이 본 고안에 의한 반도체 식각장비의 식각종료점 검출장치를 상기 챔버의 내벽재질과 동일재질로 하고, 그 외표면에 서멀 테이프를 부착하여 식각공정중에 발생되는 폴리머의 증착을 감소시킴으로써, 광 시그널을 안정적으로 관리할 수 있는 효과가 있다.As described above, the etching end point detection device of the semiconductor etching equipment according to the present invention is made of the same material as the inner wall material of the chamber, and a thermal tape is attached to the outer surface thereof to reduce the deposition of polymers generated during the etching process. There is an effect that can manage the optical signal stably.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960057071U KR200177264Y1 (en) | 1996-12-26 | 1996-12-26 | Etching equipment of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960057071U KR200177264Y1 (en) | 1996-12-26 | 1996-12-26 | Etching equipment of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980043947U true KR19980043947U (en) | 1998-09-25 |
| KR200177264Y1 KR200177264Y1 (en) | 2000-06-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019960057071U KR200177264Y1 (en) | 1996-12-26 | 1996-12-26 | Etching equipment of semiconductor device |
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| Country | Link |
|---|---|
| KR (1) | KR200177264Y1 (en) |
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1996
- 1996-12-26 KR KR2019960057071U patent/KR200177264Y1/en not_active IP Right Cessation
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| KR200177264Y1 (en) | 2000-06-01 |
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