KR102629864B1 - Film adhesives, adhesive sheets, and semiconductor devices and methods for manufacturing the same - Google Patents

Abstract

A film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted is disclosed. The film adhesive contains a thermosetting resin, a curing agent, an acrylic rubber, and a heterocyclic compound, and in the infrared absorption spectrum of the acrylic rubber, the height of the absorption peak resulting from the stretching vibration of the carbonyl group is P _CO and nitrile group. When the height of the peak resulting from the stretching vibration of is P _CN , P _CO and P _CN satisfy the conditions of the following equation (1), and the thickness of the film adhesive is 50 μm or less.
P _CN /P _CO <0.070 (1)

Description

Film adhesives, adhesive sheets, and semiconductor devices and methods for manufacturing the same

The present invention relates to film adhesives, adhesive sheets, semiconductor devices, and methods for manufacturing the same.

Recently, stack MCP (Multi Chip Package), which is a stack of semiconductor elements (semiconductor chips) stacked in multiple stages, has become popular and is installed as a memory semiconductor package for mobile phones and portable audio devices. In addition, as mobile phones and other devices become more multifunctional, semiconductor packages are also being promoted for higher speeds, higher densities, and higher integration. Accordingly, speeding up is being achieved by using copper as a wiring material for semiconductor chip circuits. Additionally, from the viewpoint of improving connection reliability to complex mounting boards and promoting heat dissipation from semiconductor packages, lead frames made of copper are used.

However, copper has the property of being prone to corrosion, and from the viewpoint of cost reduction, the coating material for ensuring the insulation of the circuit surface tends to be simplified, so it tends to be difficult to secure the electrical properties of the semiconductor package. In particular, in a semiconductor package in which semiconductor chips are stacked in multiple stages, copper ions generated by corrosion move inside the adhesive, which tends to cause loss of electrical signals within the semiconductor chip or between semiconductor chips.

Additionally, from the viewpoint of high functionality, semiconductor elements are often connected with complex mounting boards, and lead frames made of copper tend to be preferred to improve connection reliability. Even in such cases, loss of electrical signals due to copper ions generated from the lead frame may be a problem.

Additionally, in the case of a semiconductor package using a member made of copper, there is a high possibility that copper ions will be generated from the member and cause electrical trouble, and sufficient HAST resistance may not be obtained.

From the viewpoint of preventing loss of electrical signals, etc., adhesives that capture copper ions generated within semiconductor packages are being investigated. For example, Patent Document 1 describes a thermoplastic resin having an epoxy group and no carboxyl group, and an organic complex-forming compound having a heterocyclic compound containing a tertiary nitrogen atom as a reductant and forming a complex with a cation. An adhesive sheet for manufacturing a semiconductor device having

However, conventional adhesives are not sufficient in terms of suppressing copper ion permeation within the adhesive, and there is still room for improvement.

Patent Document 1: Japanese Patent Publication No. 2013-026566

Therefore, the main purpose of the present invention is to provide a film-like adhesive that is capable of sufficiently suppressing copper ion permeation in the adhesive and has superior adhesive strength.

As a result of intensive study by the present inventors, it was discovered that by combining a specific acrylic rubber and a specific component in a film adhesive, it was possible to sufficiently suppress copper ion penetration in the adhesive and the adhesive strength was superior, and the present invention was completed. reached.

One aspect of the present invention is a film adhesive for adhering a semiconductor element and a support member on which the semiconductor element is mounted, wherein the film adhesive contains a thermosetting resin, a curing agent, an acrylic rubber, and a heterocyclic compound, and acrylic In the infrared absorption spectrum of rubber, when the height of the absorption peak resulting from the stretching vibration of the carbonyl group is P _CO and the height of the peak resulting from the stretching vibration of the nitrile group is P _CN , P _CO and P _CN are expressed by the following formulas Provided is a film adhesive that satisfies the conditions of (1) and has a thickness of 50 μm or less.

P _CN /P _CO <0.070 (1)

Satisfying the conditions of Formula (1) means that, in the acrylic rubber, there are few (or no) structural units derived from acrylonitrile. By using acrylic rubber that contains few (or no) structural units derived from acrylonitrile, it can be possible to sufficiently suppress copper ion permeation in the adhesive. Although the reason for such an effect is not necessarily clear, the present inventors believe that the film has a low (or no) nitrile group in acrylonitrile, which easily forms a complex with copper ions (high complex stability constant). It is thought that this is because the introduction of copper ions into the adhesive is weakened, and as a result, copper ion permeation within the adhesive is suppressed. In addition, acrylic rubber that contains few (or does not contain) structural units derived from acrylonitrile tends to have difficulty forming a phase-separated structure, and the difficulty in forming a phase-separated structure has an effect on suppressing copper ion permeation in the adhesive. I think there is a possibility that it is being given.

By containing a heterocyclic compound, a film adhesive tends to sufficiently suppress copper ion permeation within the adhesive and have superior adhesive strength. The heterocyclic compound may be an aromatic compound having 3 or more nitrogen atoms. The heterocyclic compound may be at least one selected from the group consisting of triazole compounds and tetrazole compounds. The heterocyclic compound may be added in an amount of 0.01 to 2 parts by mass based on 100 parts by mass of the total mass of the thermosetting resin, curing agent, and acrylic rubber.

The film adhesive may further contain an inorganic filler, and the average particle diameter of the inorganic filler may be 1 μm or less.

In another aspect, the present invention provides an adhesive sheet comprising a substrate and the above-described film-like adhesive provided on one side of the substrate. The base material may be a dicing tape.

In another aspect, the present invention includes a semiconductor element, a support member for mounting the semiconductor element, and an adhesive member provided between the semiconductor element and the support member to bond the semiconductor element and the support member, the adhesive member Provides a semiconductor device that is a cured product of the above-described film-like adhesive. The support member may include a member made of copper.

In another aspect, the present invention provides a method for manufacturing a semiconductor device, including a step of bonding a semiconductor element and a support member using the above-described film-like adhesive.

In another aspect, the present invention includes a process of affixing the film-like adhesive of the adhesive sheet described above to a semiconductor wafer, and cutting the semiconductor wafer to which the film-like adhesive has been affixed, thereby forming a plurality of separate film-like adhesives. A method for manufacturing a semiconductor device is provided, comprising a step of manufacturing a bonded semiconductor element and a step of bonding the film-like adhesive bonded semiconductor device to a support member. The method for manufacturing a semiconductor device may further include a step of heating the film-like adhesive-attached semiconductor element adhered to the support member using a reflow furnace.

According to the present invention, it is possible to sufficiently suppress copper ion permeation in the adhesive, and a film-like adhesive with superior adhesive strength is provided. Additionally, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive are provided. Additionally, according to the present invention, a method for manufacturing a semiconductor device using a film-like adhesive or adhesive sheet is provided.

1 is a schematic cross-sectional view showing one embodiment of a film adhesive.
Figure 2 is a schematic cross-sectional view showing one embodiment of an adhesive sheet.
Figure 3 is a schematic cross-sectional view showing another embodiment of an adhesive sheet.
Figure 4 is a schematic cross-sectional view showing another embodiment of an adhesive sheet.
Figure 5 is a schematic cross-sectional view showing another embodiment of an adhesive sheet.
6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
7 is a schematic cross-sectional view showing another embodiment of a semiconductor device.

Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential, unless specifically stated. The sizes of components in each drawing are conceptual, and the relative size relationships between components are not limited to those shown in each drawing.

The same applies to the numerical values and ranges in this specification and do not limit the present invention. In this specification, the numerical range indicated using "~" represents a range that includes the numerical values written before and after "~" as the minimum and maximum values, respectively. In the numerical range described stepwise in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described stepwise. In addition, in the numerical range described in this specification, the upper or lower limit of the numerical range may be replaced with the value shown in the examples.

In this specification, (meth)acrylate means acrylate or methacrylate corresponding thereto. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

The film adhesive according to one embodiment is a film adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, and the film adhesive includes (A) a thermosetting resin, (B) a curing agent, and (C) It contains an acrylic rubber and (D) a heterocyclic compound, and (C) in the infrared absorption spectrum of the acrylic rubber, the height of the absorption peak derived from the stretching vibration of the carbonyl group is P _CO , and the height of the absorption peak derived from the stretching vibration of the nitrile group is When the height of the peak is P _CN , P _CO and P _CN satisfy the conditions of the following equation (1), and the thickness of the film adhesive is 50 μm or less.

P _CN /P _CO <0.070 (1)

A film adhesive can be obtained by molding an adhesive composition containing (A) a thermosetting resin, (B) a curing agent, (C) an acrylic rubber, and (D) a heterocyclic compound into a film. The film-like adhesive and adhesive composition may be in a semi-cured (B stage) state and may be in a fully cured (C stage) state after curing treatment.

(A) Ingredient: Thermosetting resin

(A) Component may be an epoxy resin from the viewpoint of adhesiveness. Epoxy resins can be used without particular restrictions as long as they have an epoxy group in the molecule. Examples of the epoxy resin include bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, phenol novolak-type epoxy resin, cresol novolak-type epoxy resin, bisphenol A novolak-type epoxy resin, and bisphenol F-type epoxy resin. Rockfish-type epoxy resin, stilbene-type epoxy resin, epoxy resin containing a triazine skeleton, epoxy resin containing a fluorene skeleton, triphenolmethane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, biphenyl aralkyl-type epoxy resin, Naphthalene-type epoxy resins, polyfunctional phenols, diglycidyl ether compounds that are polycyclic aromatics such as anthracene, etc. are mentioned. These may be used individually or in combination of two or more types. Among these, component (A) may be a cresol novolak-type epoxy resin, a bisphenol F-type epoxy resin, or a bisphenol A-type epoxy resin from the viewpoint of film tacking properties, flexibility, etc.

The epoxy equivalent weight of the epoxy resin is not particularly limited, but may be 90 to 300 g/eq, 110 to 290 g/eq, or 110 to 290 g/eq. If the epoxy equivalent weight of the epoxy resin is within this range, fluidity tends to be secured while maintaining the bulk strength of the film adhesive.

(B) Ingredient: Hardener

The (B) component may be a phenol resin that can serve as a curing agent for epoxy resin. Phenol resins can be used without particular restrictions as long as they have a phenolic hydroxyl group in the molecule. Phenol resins include, for example, phenols such as phenol, cresol, resocin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene. Phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol, and/ Or, phenol aralkyl resin, naphthol aralkyl resin, etc. synthesized from naphthol and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. These may be used individually or in combination of two or more types. Among these, the phenol resin may be phenol aralkyl resin or naphthol aralkyl resin.

The hydroxyl equivalent of the phenol resin may be 70 g/eq or more or 70 to 300 g/eq. If the hydroxyl equivalent of the phenol resin is 70 g/eq or more, the storage modulus of the film tends to improve further, and if it is 300 g/eq or less, it becomes possible to prevent problems due to foaming and outgassing.

The ratio of the epoxy equivalent of the epoxy resin and the hydroxyl equivalent of the phenol resin (epoxy equivalent of the epoxy resin/hydroxyl equivalent of the phenol resin) is 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40 from the viewpoint of curability. /0.60~0.60/0.40, or 0.45/0.55~0.55/0.45 may also be used. If the equivalence ratio is 0.30/0.70 or more, more sufficient curability tends to be obtained. If the equivalence ratio is 0.70/0.30 or less, excessive increase in viscosity can be prevented and more sufficient fluidity can be obtained.

The total content of component (A) and component (B) is 5 to 50 parts by mass, 10 to 40 parts by mass, based on 100 parts by mass of the total mass of component (A), component (B), and component (C). , or 15 to 30 masses may be given. When the total content of component (A) and component (B) is 5 parts by mass or more, the elastic modulus tends to improve due to crosslinking. If the total content of component (A) and component (B) is 50 parts by mass or less, film handleability tends to be maintained.

(C) Ingredient: Acrylic rubber

Component (C) is a rubber that has a structural unit derived from (meth)acrylic acid ester as its main component. The content of the structural unit derived from (meth)acrylic acid ester in component (C) may be, for example, 70% by mass or more, 80% by mass or more, or 90% by mass or more, based on the total amount of structural units. . Component (C) may contain a structural unit derived from (meth)acrylic acid ester having a crosslinkable functional group such as an epoxy group, alcoholic or phenolic hydroxyl group, or carboxyl group. The component (C) may contain a structural unit derived from acrylonitrile to the extent that it satisfies the conditions of formula (1) described later, but it is possible to further suppress copper ion permeation within the adhesive, and embedding Since it is superior in elasticity, component (C) may not contain a structural unit derived from acrylonitrile.

In the infrared absorption spectrum of component (C), the height of the absorption peak resulting from the stretching vibration of the carbonyl group is P _{CO , and} the height of the peak resulting from the stretching vibration of the nitrile group is P _CN . When doing so, P _CO and P _CN satisfy the conditions of equation (1) below.

P _CN /P _CO <0.070 (1)

Here, the carbonyl group is mainly derived from (meth)acrylic acid ester, which is a structural unit, and the nitrile group is mainly derived from acrylonitrile, which is a structural unit. In addition, the height of the absorption peak derived from the stretching vibration of the carbonyl group (P _CO ) and the height of the peak derived from the stretching vibration of the nitrile group (P _CN ) are defined in the examples.

Small P _CN /P _CO means that there are few structural units derived from acrylonitrile in component (C). Therefore, component (C) that does not contain a structural unit derived from acrylonitrile can theoretically satisfy the conditions of formula (1).

P _CN /P _CO is less than 0.070, and may be 0.065 or less, 0.060 or less, 0.055 or less, 0.050 or less, 0.040 or less, 0.030 or less, 0.020 or less, or 0.010 or less. If P _CN /P _CO is less than 0.070, it may become possible to sufficiently suppress copper ion permeation in the adhesive. Additionally, as the value of P _CN /P _CO decreases, copper ion permeation within the adhesive can be more sufficiently suppressed. Additionally, as the value of P _CN /P _CO decreases, the cohesive force of component (C) decreases, so embedding properties tend to be more excellent.

The glass transition temperature (Tg) of component (C) may be -50 to 50°C or -30 to 30°C. When the Tg of component (C) is -50°C or higher, the flexibility of the adhesive tends to be prevented from increasing excessively. This makes it easier to cut the film-like adhesive during wafer dicing and prevents the generation of burrs. When the Tg of component (C) is 50°C or lower, there is a tendency to suppress a decrease in the flexibility of the adhesive. This tends to make it easier to sufficiently fill voids when attaching the film adhesive to the wafer. Additionally, it is possible to prevent chipping during dicing due to a decrease in the adhesion of the wafer. Here, the glass transition temperature (Tg) means a value measured using a DSC (differential scanning calorimeter) (for example, Thermo Plus 2, manufactured by Rigaku Co., Ltd.).

(C) The weight average molecular weight (Mw) of the component may be 100,000 to 3 million or 200,000 to 2 million. When the Mw of the component (C) is in this range, film formation properties, strength on the film, flexibility, tacking properties, etc. can be appropriately controlled, and reflow properties are excellent, improving embedding properties. You can do it. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve using standard polystyrene.

Examples of commercially available products of component (C) that do not contain a structural unit derived from acrylonitrile include KH-CT-865 (manufactured by Hitachi Kasei Co., Ltd.).

The content of component (C) is 50 to 95 parts by mass, 60 to 90 parts by mass, or 70 to 85 parts by mass, based on 100 parts by mass of the total mass of component (A), component (B), and component (C). It's okay too. When the content of component (C) is within this range, copper ion permeation within the adhesive tends to be more sufficiently suppressed.

(D) Heterocyclic compounds

By containing component (D), the film adhesive tends to sufficiently suppress copper ion permeation within the adhesive and has superior adhesive strength. The component (D) may be an aromatic compound having 3 or more nitrogen atoms, or may be at least one selected from the group consisting of a triazole compound and a tetrazole compound.

Examples of the triazole compound include benzotriazole, benzotriazole-1-acetonitrile, benzotriazole-5-carboxylic acid, benzotriazole-1-methanol, carboxybenzotriazole, 3-mercaptotriazole, 5-mercaptotriazole; These amino group-substituted products, etc. can be mentioned. The triazole compound may be benzotriazole or 3-mercaptotriazole.

Examples of tetrazole compounds include 5-methyltetrazole, 5-aminotetrazole, 1-methyl-5-amino-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, and 1-carboxymethyl- 5-amino-tetrazole, etc. can be mentioned. The tetrazole compound may be 5-methyltetrazole or 5-aminotetrazole.

The content of component (D) may be 0.01 to 2 parts by mass based on 100 parts by mass of the total mass of component (A), component (B), and component (C). When the content of component (D) is within this range, it tends to be more excellent from the viewpoint of adhesive strength. The content of component (D) may be 0.03 part by mass or more, 0.05 part by mass or more, 0.1 part by mass or more, or 0.3 part by mass or more. The content of component (D) may be 2 parts by mass or less, 1.8 parts by mass or less, 1.5 parts by mass or less, or 1.2 parts by mass or less.

The film adhesive (adhesive composition) may further contain (E) an inorganic filler, (F) a coupling agent, (G) a curing accelerator, etc.

(E) Ingredient: Inorganic filler

(E) Components include, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silica, etc. You can. These may be used individually or in combination of two or more types. Among these, the (E) component may be silica from the viewpoint of adjustment of melt viscosity.

(E) The average particle diameter of component may be 1 μm or less. (E) The average particle diameter of the component may be 0.01 to 1 μm, 0.01 to 0.8 μm, 0.03 to 0.5 μm, 0.03 to 0.3 μm, or 0.03 to 0.1 μm from the viewpoint of fluidity. Here, the average particle diameter means a value obtained by converting from the BET specific surface area. As the average particle size of component (E) becomes smaller, it becomes possible to more fully suppress copper ion permeation within the adhesive.

The shape of the component (E) is not particularly limited, but may be spherical.

The content of component (E) is 0.1 to 50 parts by mass, 0.1 to 30 parts by mass, or 0.1 to 20 parts by mass, based on 100 parts by mass of the total mass of component (A), component (B), and component (C). It's okay too.

(F) Ingredient: Coupling agent

(F) The component may be a silane coupling agent. As silane coupling agents, for example, γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl) Aminopropyl trimethoxysilane, etc. can be mentioned. These may be used individually or in combination of two or more types.

(G) Ingredient: Curing accelerator

(G) The component is not particularly limited, and commonly used components can be used. Examples of the component (G) include imidazoles and their derivatives, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. These may be used individually or in combination of two or more types. Among these, from the viewpoint of reactivity, the (G) component may be imidazoles or their derivatives.

Examples of imidazole include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. Sol, etc. can be mentioned. These may be used individually or in combination of two or more types.

The film adhesive (adhesive composition) may further contain other components. Other components include, for example, pigments, ion trapping agents, and antioxidants.

The content of component (F), component (G), and other components may be 0 to 30 parts by mass based on 100 parts by mass of the total mass of component (A), component (B), and component (C).

1 is a schematic cross-sectional view showing one embodiment of a film adhesive. The film adhesive 1 (adhesive film) shown in FIG. 1 is obtained by molding an adhesive composition into a film. The film adhesive 1 may be in a semi-cured (B stage) state. Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film. When using a varnish (adhesive varnish) of an adhesive composition, component (A), component (B), component (C), component (D), and other components added as necessary are mixed in a solvent, and the mixed solution is mixed. Alternatively, the film adhesive 1 can be formed by kneading to prepare an adhesive varnish, applying the adhesive varnish to a support film, and removing the solvent by heating and drying it.

The support film is not particularly limited as long as it can withstand the heat drying described above, but examples include polyester film, polypropylene film, polyethylene terephthalate film, polyimide film, polyetherimide film, polyethernaphthalate film, and polymethyl film. It may be a pentene film or the like. The support film may be a multilayer film combining two or more types, and may have a surface treated with a release agent such as silicone-based or silica-based. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

Mixing or kneading can be performed by using a normal stirrer, a stirrer, a 3-roller, a disperser such as a ball mill, and an appropriate combination thereof.

The solvent used to prepare the adhesive varnish is not limited as long as it can uniformly dissolve, knead, or disperse each component, and conventionally known solvents can be used. Examples of such solvents include ketone-based solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone, dimethyl formamide, dimethyl acetamide, N-methyl pyrrolidone, toluene, and xylene. I can hear it. The solvent may be methyl ethyl ketone, cyclohexanone, etc. in terms of drying speed and cost.

As a method of applying the adhesive varnish to the support film, known methods can be used, for example, the knife coat method, roll coat method, spray coat method, gravure coat method, bar coat method, curtain coat method, etc. . The conditions for heat drying are not particularly limited as long as the solvent used is sufficiently volatilized, but can be performed by heating at 50 to 150°C for 1 to 30 minutes.

If the thickness of the film adhesive is 50 μm or less, the distance between the semiconductor element and the support member on which the semiconductor element is mounted becomes closer, so problems due to copper ions tend to occur easily. Since the film adhesive according to the present embodiment can sufficiently suppress copper ion permeation within the adhesive, its thickness can be set to 50 μm or less. The thickness of the film adhesive 1 may be 40 μm or less, 30 μm or less, 20 μm or less, or 15 μm or less. The lower limit of the thickness of the film adhesive 1 is not particularly limited, but may be, for example, 1 μm or more.

The copper ion permeation time of the film adhesive 1 in the semi-cured (B stage) state may be more than 80 minutes, 85 minutes or more, 90 minutes or more, 100 minutes or more, 150 minutes or more, 200 minutes or more, or It can be more than 250 minutes. When the copper ion permeation time exceeds 80 minutes, it is predicted that troubles caused by copper ions will be less likely to occur even if defects such as insufficient curing occur during semiconductor device manufacturing.

The copper ion permeation time of the film adhesive 1 (i.e., the cured product of the film adhesive) in a fully cured (C stage) state may be more than 100 minutes, and may be 120 minutes or more, 140 minutes or more, or 160 minutes or more. , it may be 180 minutes or more, 200 minutes or more, or 250 minutes or more. Trouble caused by copper ions tends to occur during high temperature processing such as a reflow process. Therefore, it is predicted that when the fully cured (C stage) state exceeds 100 minutes, troubles caused by copper ions are less likely to occur.

Figure 2 is a schematic cross-sectional view showing one embodiment of an adhesive sheet. The adhesive sheet 100 shown in FIG. 2 includes a base material 2 and a film-like adhesive 1 provided on the base material 2. Figure 3 is a schematic cross-sectional view showing another embodiment of an adhesive sheet. The adhesive sheet 110 shown in FIG. 3 includes a substrate 2, a film adhesive 1 provided on the substrate 2, and a surface of the film adhesive 1 opposite to the substrate 2. A cover film (3) is provided.

The base material 2 is not particularly limited, but may be a base film. The base film may be the same as the support film described above.

The cover film 3 is used to prevent damage or contamination of the film adhesive, and may be, for example, a polyethylene film, a polypropylene film, or a surface release agent-treated film. The thickness of the cover film 3 may be, for example, 15 to 200 μm or 70 to 170 μm.

The adhesive sheets 100 and 110 can be formed by applying an adhesive composition to a base film in the same manner as the method for forming the film-like adhesive described above. The method of applying the adhesive composition to the substrate 2 may be the same as the method of applying the adhesive composition described above to the support film.

The adhesive sheet 110 can be obtained by further laminating the cover film 3 on the film adhesive 1.

The adhesive sheets 100 and 110 may be formed using a film-like adhesive produced in advance. In this case, the adhesive sheet 100 can be formed by laminating under predetermined conditions (for example, room temperature (20°C) or heated state) using a roll laminator, vacuum laminator, or the like. Since the adhesive sheet 100 can be manufactured continuously and has excellent efficiency, it may be formed using a roll laminator in a heated state.

Another embodiment of the adhesive sheet is a dicing/die bonding integrated adhesive sheet in which the base material 2 is a dicing tape. Using a dicing/die bonding integrated adhesive sheet allows for increased work efficiency because the laminating process for a semiconductor wafer is performed once.

Examples of the dicing tape include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Additionally, the dicing tape may be subjected to surface treatment such as primer application, UV treatment, corona discharge treatment, polishing treatment, or etching treatment, as needed. The dicing tape may have adhesiveness. Such a dicing tape may be one in which adhesiveness is imparted to the above-mentioned plastic film, or may be one in which an adhesive layer is provided on one side of the above-mentioned plastic film. The adhesive layer may be either a pressure-sensitive adhesive or a radiation-curing type, and has sufficient adhesive strength to prevent the semiconductor element from scattering during dicing, and has a low adhesive strength that does not damage the semiconductor element in the subsequent pickup process of the semiconductor element. There is no particular limitation as long as it has one, and a conventionally known one can be used.

The thickness of the dicing tape may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economic efficiency and film handling.

Examples of such an integrated dicing/die bonding adhesive sheet include those having the structure shown in FIG. 4 and those having the structure shown in FIG. 5. Figure 4 is a schematic cross-sectional view showing another embodiment of an adhesive sheet. Figure 5 is a schematic cross-sectional view showing another embodiment of an adhesive sheet. The adhesive sheet 120 shown in FIG. 4 includes a dicing tape 7, an adhesive layer 6, and a film-like adhesive 1 in this order. The adhesive sheet 130 shown in FIG. 5 includes a dicing tape 7 and a film-like adhesive 1 provided on the dicing tape 7.

The adhesive sheet 120 can be obtained, for example, by providing the adhesive layer 6 on the dicing tape 7 and further laminating the film-like adhesive 1 on the adhesive layer 6. The adhesive sheet 130 can be obtained, for example, by bonding the dicing tape 7 and the film-like adhesive 1.

Film adhesives and adhesive sheets may be used in the manufacture of semiconductor devices, and film adhesives and dicing tapes can be applied to semiconductor wafers or already miniaturized semiconductor elements (semiconductor chips) at temperatures ranging from 0°C to 0°C. After bonding at 90°C, a film-shaped adhesive-attached semiconductor element is obtained by dividing with a rotating blade, a laser, or stretching, and then the film-shaped adhesive-attached semiconductor element is bonded onto an organic substrate, a lead frame, or another semiconductor element. It may be used in the manufacture of semiconductor devices including processes.

Examples of semiconductor wafers include single crystal silicon, polycrystalline silicon, various ceramics, and compound semiconductors such as gallium arsenide.

Film adhesives and adhesive sheets include semiconductor elements such as ICs and LSIs, lead frames such as 42 alloy lead frames and copper lead frames; Plastic films such as polyimide resin and epoxy resin; A base material such as glass nonwoven fabric is impregnated and cured with plastic such as polyimide resin or epoxy resin; It can be used as a die bonding adhesive for bonding support members for mounting semiconductors such as ceramics such as alumina.

Film-like adhesives and adhesive sheets are also suitably used as adhesives for bonding semiconductor elements to each other in Stacked-PKG, which has a structure in which a plurality of semiconductor elements are stacked on top of each other. In this case, one semiconductor element becomes a support member on which the semiconductor element is mounted.

Film adhesives and adhesive sheets can also be used, for example, as a protective sheet to protect the back side of the semiconductor element of a flip-chip type semiconductor device, a sealing sheet to seal between the surface of the semiconductor element of a flip-chip type semiconductor device and an adherend, etc. there is.

A semiconductor device manufactured using a film adhesive will be described in detail using drawings. Additionally, semiconductor devices with various structures have been proposed in recent years, and the use of the film adhesive according to this embodiment is not limited to semiconductor devices with the structure described below.

Figure 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in FIG. 6 is provided between a semiconductor element 9 and a support member 10 on which the semiconductor element 9 is mounted, and between the semiconductor element 9 and the support member 10, An adhesive member (cured product 1c of a film-like adhesive) for bonding the semiconductor element 9 and the support member 10 is provided. A connection terminal (not shown) of the semiconductor element 9 is electrically connected to an external connection terminal (not shown) through a wire 11 and is sealed by a sealant 12.

Figure 7 is a schematic cross-sectional view showing another embodiment of a semiconductor device. In the semiconductor device 210 shown in FIG. 7, the first-stage semiconductor element 9a is attached to the support member 10 on which the terminal 13 is formed by an adhesive member (cured product 1c of a film-like adhesive). The semiconductor elements 9b of the second stage are further adhered to the semiconductor elements 9a of the first stage by an adhesive member (cured product 1c of a film-like adhesive). The connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to an external connection terminal through a wire 11 and are sealed by a sealant 12. there is. In this way, the film adhesive according to the present embodiment can also be suitably used in a semiconductor device having a structure in which a plurality of semiconductor elements overlap.

The semiconductor device (semiconductor package) shown in FIGS. 6 and 7 is made by interposing a film-like adhesive between a semiconductor element and a support member or between a semiconductor element and a semiconductor element, for example, and heat-pressing them to bond them, Thereafter, it is obtained by going through a wire bonding process, a sealing process using a sealing material, a heating and melting process including reflow using solder, etc., as necessary. The heating temperature in the heat compression process is usually 20 to 250°C, the load is usually 0.1 to 200 N, and the heating time is usually 0.1 to 300 seconds.

As a method of interposing a film-like adhesive between a semiconductor element and a support member or between a semiconductor element and a semiconductor element, as described above, a semiconductor element with a film-like adhesive is manufactured in advance and then attached to the support member or semiconductor element. It can be any method.

The support member may include a member made of copper. In the semiconductor device according to the present embodiment, the semiconductor element and the support member are bonded by the cured product 1c of the film adhesive, so even if a member made of copper is used as a structural member of the semiconductor device, The influence of copper ions generated from the member can be reduced, and the occurrence of electrical troubles caused by copper ions can be sufficiently suppressed.

Here, examples of members made of copper include lead frames, wiring, wires, heat radiation materials, etc. However, no matter which member copper is used in, it is possible to reduce the influence of copper ions.

Next, an embodiment of a semiconductor device manufacturing method in the case of using the integrated dicing/die bonding adhesive sheet shown in FIG. 4 will be described. In addition, the method of manufacturing a semiconductor device using an integrated dicing/die bonding adhesive sheet is not limited to the method of manufacturing a semiconductor device described below.

First, the semiconductor wafer is pressed to the film adhesive 1 in the adhesive sheet 120 (integrated dicing/die bonding adhesive sheet), and the wafer is held and fixed (mounting process). This process may be performed while pressing using a pressing means such as a pressing roll.

Next, dicing of the semiconductor wafer is performed. In this way, the semiconductor wafer is cut to a predetermined size, and a plurality of individual film-like adhesive-attached semiconductor elements (semiconductor chips) are manufactured. Dicing can be performed, for example, from the circuit surface side of the semiconductor wafer according to a normal method. In addition, in this process, for example, a cutting method called full cut in which a cut is made up to the dicing tape, a method in which a semiconductor wafer is cut in half and divided by cooling and pulling, a cutting method using a laser, etc. can be adopted. . The dicing device used in this process is not particularly limited, and a conventionally known device can be used.

In order to peel off the semiconductor element adhesively fixed to the dicing/die bonding integrated adhesive sheet, the semiconductor element is picked up. The method of pickup is not particularly limited, and various conventionally known methods can be adopted. For example, there is a method of pushing up individual semiconductor elements from the dicing/die bonding integrated adhesive sheet side with a needle and picking up the pushed up semiconductor elements using a pickup device.

Here, when the pressure-sensitive adhesive layer is a radiation (for example, ultraviolet ray) cured type, the pickup is performed after irradiating radiation to the pressure-sensitive adhesive layer. As a result, the adhesive strength of the adhesive layer to the film adhesive is reduced, making peeling of the semiconductor element easier. As a result, pickup becomes possible without damaging the semiconductor element.

Next, the film-like adhesive-attached semiconductor element formed by dicing is adhered to a support member for mounting the semiconductor element through the film-like adhesive. Adhesion may be performed by compression. The conditions for die bonding are not particularly limited and can be set appropriately as needed. Specifically, for example, it can be performed within the range of a die bond temperature of 80 to 160°C, a bonding load of 5 to 15 N, and a bonding time of 1 to 10 seconds.

If necessary, a process for heat curing the film adhesive may be provided. By thermosetting the film adhesive bonding the support member and the semiconductor element through the above bonding process, stronger bonding becomes possible. When performing heat curing, pressure may be applied simultaneously to cure the material. The heating temperature in this process can be appropriately changed depending on the constituents of the film adhesive. The heating temperature may be, for example, 60 to 200°C. Additionally, the temperature or pressure may be changed step by step.

Next, a wire bonding process is performed to electrically connect the tip of the terminal portion (inner lead) of the support member and the electrode pad on the semiconductor element with a bonding wire. As the bonding wire, for example, gold wire, aluminum wire, copper wire, etc. are used. The temperature when performing wire bonding may be within the range of 80 to 250°C or 80 to 220°C. The heating time may be several seconds to several minutes. The connection may be performed in a heated state within the above temperature range by using a combination of vibration energy from ultrasonic waves and compression energy from applied pressure.

Next, a sealing process is performed to seal the semiconductor element with a sealing resin. This process is performed to protect the semiconductor element or bonding wire mounted on the support member. This process is performed by molding the sealing resin into a mold. The sealing resin may be, for example, an epoxy-based resin. The substrate and residue are buried by heat and pressure during sealing, preventing peeling due to air bubbles at the adhesive interface.

Next, in the post-cure process, the insufficiently cured sealing resin is completely cured in the sealing process. In the sealing process, even if the film adhesive is not heat-cured, in this process, the film adhesive is heat-cured together with the curing of the sealing resin, thereby enabling adhesive fixation. The heating temperature in this process can be set appropriately depending on the type of sealing resin. For example, it may be within the range of 165 to 185°C, and the heating time may be about 0.5 to 8 hours.

Next, the film-like adhesive-attached semiconductor element adhered to the support member is heated using a reflow furnace. In this process, the resin-encapsulated semiconductor device may be surface mounted on the support member. Examples of the surface mounting method include reflow soldering, in which solder is supplied in advance on a printed wiring board, then heated and melted using warm air or the like, and soldering is performed. Examples of heating methods include hot air reflow, infrared reflow, and the like. In addition, the heating method may be to heat the whole or a local part. The heating temperature may be within the range of 240 to 280°C, for example.

When stacking semiconductor devices in multiple layers, the heat history such as the wire bonding process increases, and the effect on peeling due to bubbles present at the interface between the film adhesive and the semiconductor device may increase. However, the film adhesive according to the present embodiment tends to have lower cohesion and improved embedding properties by using a specific acrylic rubber. Therefore, it is difficult for air bubbles to enter the semiconductor device, the air bubbles can be easily diffused during the sealing process, and peeling due to air bubbles at the adhesive interface can be prevented.

Example

Below, the present invention will be specifically explained based on examples, but the present invention is not limited to these.

[Production of film adhesive]

(Examples and comparative examples)

<Preparation of adhesive varnish>

Cyclohexanone is added to a composition consisting of (A) an epoxy resin as a thermosetting resin, (B) a phenol resin as a curing agent, and (E) an inorganic filler, with the product names and composition ratios (unit: parts by mass) shown in Tables 1 and 2. Then, it was stirred and mixed. To this, (C) acrylic rubber shown in Tables 1 and 2 was added and stirred, and (D) heterocyclic compound, (F) coupling agent, and (G) curing accelerator shown in Tables 1 and 2 were further added. Then, each component was stirred until it became uniform, and an adhesive varnish was prepared. In addition, the numerical values of component (C) and component (E) shown in Table 1 and Table 2 mean the mass part of solid content.

(A) Thermosetting resin

(A1) YDCN-700-10 (brand name, Shin-Nittetsu Sumikin Chemical Co., Ltd., o-cresol novolac type epoxy resin, epoxy equivalent weight: 209 g/eq)

(B) Hardener

(B1) HE-100C-30 (brand name, Air Water Co., Ltd., phenylaralkyl type phenol resin, hydroxyl equivalent weight: 174 g/eq, softening point 77°C)

(C) Acrylic rubber

(C1) SG-P3 improved product (SG-P3 (trade name, Nagase Chemtex Co., Ltd.) acrylic rubber, excluding structural units derived from acrylonitrile, weight average molecular weight of acrylic rubber: 600,000, acrylic Theoretical Tg of rubber: 12℃, P _CN /P _CO =0.001)

(C2) SG-P3 solvent modified product (SG-P3 (product name, Nagase Chemtex Co., Ltd., methyl ethyl ketone solution of acrylic rubber) with a modified solvent, weight average molecular weight of acrylic rubber: 800,000, acrylic rubber Theoretical Tg: 12℃, P _CN /P _CO =0.070)

(Measurement of IR spectrum)

P _CN /P _CO of (C1) and (C2) were calculated by the following method. First, the solvent was removed from (C1) and (C2), and the transmission IR spectrum was measured by the KBr purification method, with the vertical axis indicating absorbance and the horizontal axis indicating wave number (cm ^-1 ). To measure the IR spectrum, FT-IR6300 (manufactured by Nippon Bunko Co., Ltd., light source: high-brightness ceramic light source, detector: DLATGS) was used.

(Height of absorption peak resulting from stretching vibration of carbonyl group, P _CO )

The peak with the highest absorbance between the two points of 1670 cm ^-1 and 1860 cm ^-1 was taken as the peak point. The straight line between the two points at 1670 cm ^-1 and 1860 cm ^-1 is used as the base line, the point on this base line at the same wave number as the peak point is used as the base line point, and the difference in absorbance between the base line point and the peak point is calculated as the carbonyl group. It was set as the height (P _CO ) of the absorption peak resulting from stretching vibration.

(Height of peak P _CN resulting from stretching vibration of nitrile group)

In the same IR spectrum from which P _CO was determined, the peak with the highest absorbance between the two points of 2270 cm ^-1 and 2220 cm ^-1 was taken as the peak point. The straight line between the two points of 2270 cm ^-1 and 2220 cm ^-1 is used as the base line, the point on this base line at the same wave number as the peak point is used as the base line point, and the difference in absorbance between the base line point and the peak point is the nitrile group. It was set as the height (P _CN ) of the peak resulting from stretching vibration.

(D) Heterocyclic compounds

(D1) Benzotriazole

(D2) 5-aminotetrazole

(D3) 5-methyltetrazole

(D4) 3-mercaptotriazole

(E) Inorganic filler

(E1) SC2050-HLG (brand name, Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm)

(E2) YA050C-HHG (brand name, Admatex Co., Ltd., silica filler dispersion, average particle size 0.05 μm)

(F) Coupling agent

(F1) A-189 (brand name, Nippon Unica Co., Ltd., γ-mercaptopropyltrimethoxysilane)

(F2) A-1160 (brand name, Nippon Unica Co., Ltd., γ-ureidopropyltriethoxysilane)

(G) Curing accelerator

(G1) 2PZ-CN (brand name, Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

<Production of film adhesive>

The produced adhesive varnish was filtered through a 100 mesh filter and vacuum degassed. As a base film, a 38-μm-thick polyethylene terephthalate (PET) film subjected to release treatment was prepared, and the adhesive varnish after vacuum defoaming was applied onto the PET film. The applied adhesive varnish was heated and dried in two stages, at 90°C for 5 minutes and then at 130°C for 5 minutes, and Comparative Examples 1-1 and 1-2 and Examples 1-1 and 1- were in the B stage state. 2 and Comparative Examples 2-1 and 2-2, and the film adhesives of Examples 2-1 to 2-7 were obtained. In the case of the film adhesive, the thickness was adjusted to 10 μm depending on the amount of adhesive varnish applied.

[Table 1]

[Table 2]

[Measurement of copper ion permeation time]

<Preparation of solution A>

2.0 g of anhydrous copper (II) sulfate was dissolved in 1020 g of distilled water and stirred until the copper sulfate was completely dissolved to prepare an aqueous copper sulfate solution with a copper ion concentration of 500 mg/kg in terms of Cu element. The obtained aqueous solution of copper sulfate was used as solution A.

<Preparation of solution B>

1.0 g of anhydrous sodium sulfate was dissolved in 1000 g of distilled water and stirred until the sodium sulfate was completely dissolved. To this, 1000 g of N-methyl-2-pyrrolidone (NMP) was added and stirred. Afterwards, it was air-cooled to room temperature to obtain an aqueous sodium sulfate solution. The obtained solution was referred to as solution B.

<Measurement of copper ion penetration time>

The film-like adhesives (thickness: 10 μm) of Comparative Example 1-1, Examples 1-1, 1-2, and Comparative Examples 2-1 and Examples 2-1 to 2-7 prepared above were each formed into a film adhesive having a diameter of about 3 cm. It was cut into a round shape. Next, two silicone packing sheets with a thickness of 1.5 mm, an outer diameter of approximately 3 cm, and an inner diameter of 1.8 cm were prepared. The film-like adhesive cut into circles was sandwiched between two silicone packing sheets, which were fitted into the flange portions of two glass cells with a volume of 50 mL and secured with rubber bands.

Next, 50 g of solution A was injected into one glass cell, and then 50 g of solution B was injected into the other glass cell. Mars Carbon (manufactured by Staedtler Co., Ltd., ϕ2 mm/130 mm) was inserted into each cell as a carbon electrode. The liquid A side was used as the anode, and the liquid B side was used as the cathode, and the anode and a DC power supply (manufactured by A&D Co., Ltd., DC power supply device AD-9723D) were connected. Additionally, the cathode and the direct current power supply were connected in series through an ammeter (Digital multimeter PC-720M, manufactured by Sanwa Denki Keiki Co., Ltd.). At room temperature, voltage was applied at an applied voltage of 24.0 V, and measurement of the electric current value was started after application. Measurements were performed until the electric current value exceeded 15 μA, and the time when the electric current value reached 10 μA was taken as the copper ion permeation time. The results are shown in Tables 3 and 4. In this evaluation, it can be said that the longer the permeation time is, the more suppressed copper ion permeation is.

The film adhesives of Comparative Example 1-1 and Examples 1-1 and 1-2 and Comparative Example 2-1 and Examples 2-1 to 2-7 in the B stage were further heated at 170°C for 1 hour. By drying, film-like adhesives of Comparative Example 1-1 and Examples 1-1 and 1-2 and Comparative Example 2-1 and Examples 2-1 to 2-7 in the C stage were produced.

Except that the film adhesive in the B stage state was changed to the film adhesive in the C stage state, the copper ion permeation time was measured in the same manner as when using the film adhesive in the B stage state, and the copper ion permeation time was measured. The penetration time was measured. In addition, when using a film adhesive in a C stage state, the measurement was performed until the electric current value exceeded 5 μA, and the time when the electric current value reached 1 μA was taken as the copper ion permeation time. The results are shown in Tables 3 and 4. In this evaluation, it can be said that the longer the permeation time is, the more suppressed copper ion permeation is.

[Table 3]

[Table 4]

[Evaluation of adhesive strength]

<Manufacturing of semiconductor devices>

Comparative Example 1-2, Examples 1-1, 1-2, Comparative Example 2-2, and Examples 2-1 to 2-7 were prepared by preparing a dicing tape (manufactured by Hitachi Kasei Co., Ltd., thickness 110 μm). A film-like adhesive (thickness of 10 μm) was applied, and an integrated dicing-die-bonding adhesive sheet including a dicing tape and a film-like adhesive was produced. A 400-μm-thick semiconductor wafer was laminated on the film adhesive side of the dicing-die bonding integrated adhesive sheet at a stage temperature of 70°C to produce a dicing sample.

The obtained dicing sample was cut using a fully automatic dicer DFD-6361 (manufactured by Disco Co., Ltd.). Cutting was performed by a step cut method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Co., Ltd.) were used. The cutting conditions were blade rotation speed of 4000 rpm, cutting speed of 50 mm/sec, and chip size of 7.5 mm x 7.5 mm. Cutting was performed in one step so that about 30 μm of the semiconductor wafer remained, and then in two steps so that a cut of about 20 μm was made in the dicing tape.

Subsequently, the semiconductor chip obtained by cutting was thermocompressed on a solder resist (Taiyo Holdings Co., Ltd., brand name: AUS-308). The compression conditions were a temperature of 120°C, time of 1 second, and pressure of 0.1 MPa. Subsequently, the sample obtained by compression was placed in a dryer and cured at 170°C for 1 hour. The semiconductor chip pressed to the solder resist is hardened, and the semiconductor chip is hooked and pulled using a universal bond tester (product name: Series 4000, manufactured by Nordson Advance Technology Co., Ltd.) to share the die after curing the semiconductor chip and the solder resist. The strength was measured and evaluated as adhesion. The measurement conditions were that the stage temperature was 250°C. The results are shown in Table 5 and Table 6.

[Table 5]

[Table 6]

As shown in Tables 3 and 4, the film adhesive having acrylic rubber that satisfies the requirements of Formula (1) has copper ions compared to the film adhesive that has acrylic rubber that does not meet the requirements of Formula (1). The transmission time was prolonged (Comparative Example 1-2 and Example 1-1, 1-2 and Comparative Example 1-1 and Comparative Example 2-2 and Examples 2-1 to 2-7 and Comparative Example 2- contrast of 2). This is presumed to be because the power of the film adhesive to introduce copper ions is weakened by using acrylic rubber with few (or no) nitrile groups, which have a high stability constant for complexation with copper ions. In addition, from the comparison of Example 1-1 and Example 2-1 and the comparison of Example 1-2 and Example 2-2, the smaller the average particle diameter of the inorganic filler, the longer the copper ion permeation time tends to be. It turned out that

As shown in Tables 5 and 6, the adhesive strength of the film adhesives containing various heterocyclic compounds was further improved compared to the film adhesives not containing heterocyclic compounds (Comparative Examples 1-2 and Examples Comparison of 1-1, 1-2 and Comparative Example 2-2 and Examples 2-1 to 2-7).

As described above, it was confirmed that the film adhesive of the present invention is capable of sufficiently suppressing copper ion permeation within the adhesive and has superior adhesive strength.

One… film adhesive
2… write
3… cover film
6… adhesive layer
7… dicing tape
9, 9a, 9b… semiconductor device
10… support member
11… wire
12… sealant
13… Terminals
100, 110, 120, 130… adhesive sheet
200, 210… semiconductor device

Claims (12)

A film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted,
The film adhesive contains a thermosetting resin, a curing agent, an acrylic rubber, a heterocyclic compound, and an inorganic filler,
In the infrared absorption spectrum of the acrylic rubber, when the height of the absorption peak resulting from the stretching vibration of the carbonyl group is P _CO and the height of the peak resulting from the stretching vibration of the nitrile group is P _CN , P _CO and P _CN are Satisfies the conditions of equation (1) below,
The content of the acrylic rubber is 70 to 85 parts by mass based on 100 parts by mass of the total mass of the thermosetting resin, the curing agent, and the acrylic rubber,
The content of the inorganic filler is 0.1 to 20 parts by mass based on 100 parts by mass of the total mass of the thermosetting resin, the curing agent, and the acrylic rubber,
A film adhesive wherein the thickness of the film adhesive is 50 μm or less.
P _CN /P _CO <0.070 (1) In claim 1,
A film adhesive wherein the heterocyclic compound is an aromatic compound having 3 or more nitrogen atoms. In claim 1 or claim 2,
A film adhesive wherein the heterocyclic compound is at least one selected from the group consisting of triazole compounds and tetrazole compounds. In claim 1 or claim 2,
The film adhesive wherein the heterocyclic compound is 0.01 to 2 parts by mass based on 100 parts by mass of the total mass of the thermosetting resin, the curing agent, and the acrylic rubber. An adhesive sheet comprising a base material and the film adhesive according to claim 1 or 2 provided on one side of the base material. In claim 5,
An adhesive sheet wherein the base material is a dicing tape. A semiconductor element, a support member for mounting the semiconductor element, and an adhesive member provided between the semiconductor element and the support member to adhere the semiconductor element and the support member,
A semiconductor device wherein the adhesive member is a cured product of the film adhesive according to claim 1 or 2. In claim 7,
A semiconductor device wherein the support member includes a member made of copper. A method of manufacturing a semiconductor device, comprising a step of bonding a semiconductor element and a support member using the film adhesive according to claim 1 or 2. A step of attaching the film-like adhesive of the adhesive sheet according to claim 5 to a semiconductor wafer,
A step of cutting the semiconductor wafer to which the film adhesive is attached, thereby producing a plurality of separate film-like adhesive-attached semiconductor devices;
A method of manufacturing a semiconductor device, comprising a step of adhering the film-like adhesive attached semiconductor element to a support member. In claim 10,
A method for manufacturing a semiconductor device, further comprising heating the film-like adhesive-attached semiconductor element adhered to the support member using a reflow furnace. delete