KR102493590B1 - Acetylene detecting sensor and method for manufacturing the same and acetylene detecting system comprising the same - Google Patents

Abstract

The present invention is a substrate; and a sensing film formed on the substrate and including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn). It relates to a sensor, a manufacturing method thereof, and an acetylene detection system including the same.

Description

Acetylene detection sensor, manufacturing method thereof, and acetylene detection system including the same

The present invention relates to an acetylene detection sensor, a method for manufacturing the same, and an acetylene detection system including the same.

In general, gas detection sensors are used in various fields such as industrial process control, atmospheric environment monitoring, detection of harmful gases in mines, and alcohol concentration inspection. However, there are currently few technologies that can quickly and accurately detect industrial chemicals.

Most of the gas is a colorless and toxic gas that is easily released through an incomplete combustion process that is generated from the exhaust gas of a factory or automobile that handles organic matter. The development of a gas detection sensor for detecting such a toxic gas has been promoted, and a general gas detection sensor measures using a characteristic in which electrical conductivity or electrical resistance changes according to the adsorption of gas molecules. Materials widely used as gas detection sensors include metal oxide semiconductors, solid electrolyte materials, various organic materials, and carbon black and organic compound materials. However, most of them have low reactivity and lack of selectivity for other gases, making commercialization difficult.

In addition, among 10 gases generated in a transformer, acetylene is an important indicator for preventing an arc discharge, and the generation of acetylene itself is a problem. In particular, since arc discharge is suspected even if acetylene is generated in an amount of 0.5 ppm or more in an early transformer, it is a gas that must be sensed for transformer monitoring. In particular, acetylene is designated as a gas having high effectiveness in failure determination among the amount of each component gas at a level of concern or higher, and has become a major index for transformer abnormality diagnosis. Therefore, there is a demand for a sensor for detecting acetylene with high reactivity among 10 gases generated in the transformer.

The present invention has a high reactivity to acetylene, a substrate; and a sensing film formed on the substrate and including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn). sensors, etc.

However, the technical problem to be achieved by the present invention is not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

The present invention is a substrate; and a sensing film formed on the substrate and including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn). sensor is provided.

The oxide nanowire may have a length of 250 nm to 400 nm.

An interval between the oxide nanowires may be 1 nm to 100 nm.

The oxide nanowire array may be deposited through a glancing angle deposition (GLAD) process.

On the surface of the oxide nanowire array, palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO), nickel (Ni) A catalyst including one or more metals selected from the group consisting of silver (Ag), gold (Au), and copper oxide (CuO) may be formed.

The acetylene detection sensor may operate at a temperature of 50 °C to 500 °C.

The acetylene detection sensor may have a maximum response of 10% or more according to Equation 1 below to acetylene at a concentration of 10 ppm in dry air or insulating oil:

[Equation 1]

In Equation 1, R ₀ is a resistance value before sensing acetylene, and Rg min is a minimum resistance value after sensing acetylene.

In one embodiment of the present invention, (a) preparing a substrate; and (b) depositing an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) on the substrate to form a sensing film. It provides a method for manufacturing an acetylene detection sensor comprising

(c) Palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO), nickel on the surface of the oxide nanowire array The method may further include forming a catalyst including at least one metal selected from the group consisting of (Ni), silver (Ag), gold (Au), and copper oxide (CuO).

Deposition of the oxide nano-array in step (b) may be performed through a glancing angle deposition (GLAD) process.

As another embodiment of the present invention, a power supply unit for supplying power; a driving unit for driving an operation of the sensing unit from the power supplied from the power supply unit; a sensing unit including the acetylene detection sensor; a determination unit for determining whether acetylene is sensed by calculating a response according to Equation 2 below from the resistance value calculated from the magnitude of the current detected by the sensing unit and comparing it with a reference reactivity; And it provides an acetylene detection system comprising a display unit for displaying the result determined by the determination unit:

[Equation 2]

In Equation 2, R ₀ is a resistance value before sensing acetylene, and Rg is a resistance value after sensing acetylene.

The acetylene detection sensor according to the present invention is characterized in that a sensing film including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si) and zinc (Zn) is applied. As such, the oxide nanowire array has high reactivity to acetylene.

In particular, by optimizing the length of the oxide nanowire array or optimizing the operating temperature of the acetylene detection sensor, the reactivity to acetylene can be further improved, so that it can be used not only in dry air but also in insulating oil without installing a separate heater. , can have a high reactivity to acetylene.

1 is a diagram showing an acetylene detection sensor according to an embodiment of the present invention.
2 is a diagram showing a manufacturing method of an acetylene detection sensor according to an embodiment of the present invention.
3 is a picture showing a glancing angle deposition (GLAD) apparatus for depositing an oxide nanowire array according to an embodiment of the present invention.
4 is a diagram showing an acetylene detection system according to an embodiment of the present invention.
5 is a SEM picture showing a sensing film in the acetylene sensor manufactured in Example 1.
6 is a change in response according to maximum response and detection time after detecting low concentration (10 ppm) of acetylene in the acetylene sensor prepared in Examples 1 to 5 in dry air in a chamber at 250 ° C. is a graph that shows
Figure 7 shows the maximum response and response according to detection time after detecting low concentration (10 ppm) of acetylene with the acetylene sensor prepared in Example 3 in dry air in a chamber at 50 ° C to 350 ° C This is a graph showing the change.
8 is a graph showing the change in surface resistance after detecting high concentration (1000 ppm) of acetylene without installing a separate heater in the acetylene sensor prepared in Example 3 in insulating oil at 80 ° C.

The present inventors manufacture an acetylene detection sensor to which a sensing film including an oxide nanowire array containing at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) is applied, which It was confirmed that it had a high reactivity to acetylene, and the present invention was completed.

The term "nanowire" in the present specification refers to a wire structure having a size of a nanometer unit, and includes nanowires having a diameter of less than 10 nm to several hundred nm in diameter, and is particularly referred to in the longitudinal direction. There is no size limit. Also, the term "nanowire array" in the present specification means an aggregate of a plurality of nanowires.

Hereinafter, the present invention will be described in detail.

acetylene detection sensor

The present invention is a substrate; and a sensing film formed on the substrate and including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn). sensor is provided.

1 is a diagram showing an acetylene detection sensor according to an embodiment of the present invention.

As shown in Figure 1, the acetylene detection sensor according to an embodiment of the present invention is a substrate 131; source-drain electrodes 132 and 133 formed on the substrate 131 and spaced apart from each other; and a sensing film 134 formed between the electrodes 132 and 133 and containing at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) . An insulating layer (not shown) containing silicon oxide may be additionally formed between the substrate 131 and the electrodes 132 and 133 .

Although not shown in the drawings, an acetylene sensor according to another embodiment of the present invention includes a substrate; a sensing film formed entirely on the substrate and including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn); and source-drain electrodes formed on the sensing film and spaced apart from each other. An insulating layer containing silicon oxide may be additionally formed between the substrate and the sensing layer.

First, the acetylene detection sensor according to the present invention includes a substrate. The substrate is for forming source-drain electrodes and a sensing film, and may be formed of a material such as silicon or glass. An insulating layer containing silicon oxide (SiO ₂ , etc.) may be additionally formed on the substrate.

Next, the acetylene detection sensor according to the present invention includes a sensing film including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) do.

The sensing film includes an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn), and the oxide nanowire array includes the electrodes Formed between, a plurality of oxide nanowires may be vertically arranged on the substrate at regular intervals.

In addition, the oxide nanowire array is SnO ₂ , WO _{3 ,} TiO ₂ And it preferably includes at least one selected from the group consisting of ZnO, SnO ₂ It is more preferable to include one, but is not limited thereto. At this time, SnO ₂ , WO _{3 ,} TiO ₂ And ZnO is an n-type semiconductor and has an advantage of being able to detect acetylene with high reactivity by inducing a depletion layer change.

In this case, the length of the oxide nanowires in the oxide nanowire array may be 100 nm to 1 μm, preferably 250 nm to 700 nm, and more preferably 250 nm to 400 nm, but is not limited thereto. At this time, when the length of the oxide nanowire is too short or too long, there is a problem that the maximum response to acetylene is rather lowered.

In addition, in the oxide nanowire array, the diameter of the oxide nanowires may be 20 nm to 80 nm, and the distance between the oxide nanowires may be 1 nm to 100 nm.

In addition, the oxide nanowire array may be doped with an n-type or p-type impurity to further improve reactivity to acetylene. Specifically, the mole ratio of the oxide and the impurity is preferably 99.9:1 to 90:1, but is not limited thereto. At this time, when the molar ratio of oxides and impurities exceeds 99.1: 1, there is a problem that the effect due to impurity doping is not sufficient, and when the molar ratio of oxides and impurities is less than 90: 1, doping of impurities in the oxide position is not good. There is a problem that doesn't.

Meanwhile, the oxide nanowire array may be deposited through a glancing angle deposition (GLAD) process. The GLAD process is a bottom-up process for forming nanostructures, and has the advantage of being able to control the shape of detailed nanostructures while forming a basic frame of nanostructures in the deposition process. According to the Glad process, the length, diameter, spacing, etc. of the oxide wires in the oxide nanoarray can be controlled by adjusting the angle of the substrate for depositing the oxide nanowire array, the rotation speed of the substrate, and the vapor flow rate of the source. can

3 is a picture showing a glancing angle deposition (GLAD) apparatus for depositing an oxide nanowire array according to an embodiment of the present invention.

Optionally, palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm2O3), reduced graphene oxide (rGO), nickel (Ni) are formed on the surface of the oxide nanowire array. , Silver (Ag), gold (Au), and a catalyst containing one or more metals selected from the group consisting of copper oxide (CuO) may be formed, and it is preferable to form a catalyst containing palladium (Pd). Not limited. The catalyst is formed through deposition on the surface of the nanowire array, and may be entirely formed on the surface of the nanowire array to form a core-shell structure or partially formed on the surface of the nanowire array. may be At this time, the catalyst may be formed in the form of a film or in the form of particles.

After exposure to acetylene, the catalyst may induce a depletion layer change or induce a spillover effect by the catalyst.

The catalyst preferably has a thickness of 1 nm to 20 nm, but is not limited thereto. At this time, the catalyst may be continuously deposited through the Glad process or deposited through a new process such as a sputtering method. When the thickness of the catalyst is less than 1 nm, there is a problem that the reaction to acetylene does not occur, When the thickness of the catalyst exceeds 20 nm, there is a problem in that the recovery time is prolonged when exposed to air for reaction recovery after exposure to acetylene.

Next, the acetylene detection sensor according to the present invention may include source-drain electrodes, that is, a source electrode and a drain electrode formed on the substrate or the sensing film and spaced apart from each other. The electrodes may be formed by depositing an electrode material and then patterning by a combination of photolithography and lift-off. In this case, the electrode material may be gold or platinum, the distance between the electrodes may be about 5 μm to 10 μm, and each thickness may be about 1 μm to 10 μm.

Therefore, the acetylene detection sensor according to the present invention can operate at a temperature of 50 ° C to 500 ° C, and can improve the maximum response to acetylene by operating at an optimized temperature of 200 ° C to 300 ° C. .

In addition, the acetylene sensor may have a maximum response of 10% or more, preferably 100% or more, and more preferably 400% or more Preferred, but not limited to:

[Equation 1]

In Equation 1, R ₀ is a resistance value before sensing acetylene, and Rg min is a minimum resistance value after sensing acetylene.

"Dry air" in the present specification generally means low-humidity air having a humidity of 10 to 20%, and may mean air containing only nitrogen and oxygen without containing water vapor.

In addition, "insulating oil" in this specification refers to oil used for electrical insulation such as transformers, circuit breakers, capacitors and cables, most of which are petroleum-based, but some are non-flammable synthetic insulating oil, such as diphenyl chloride. Depending on the use, there are various properties, but in general, those having high volume electrical resistance, low viscosity, and stability against oxidation are selected.

Manufacturing method of acetylene detection sensor

The present invention includes (a) forming source-drain electrodes spaced apart on a substrate; and (b) forming a sensing film by depositing an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) between the electrodes. It provides a method for manufacturing an acetylene detection sensor comprising a.

Optionally, (c) palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO) on the surface of the oxide nanowire array ), nickel (Ni), silver (Ag), gold (Au), and copper oxide (CuO) may further include forming a catalyst including one or more metals selected from the group consisting of.

2 is a diagram showing a manufacturing method of an acetylene detection sensor according to an embodiment of the present invention.

As shown in FIG. 2, in the method of manufacturing an acetylene detection sensor according to an embodiment of the present invention, a substrate is prepared, source-drain electrodes spaced apart from each other are formed on the substrate, and tin is placed between the electrodes. (Sn), tungsten (W), titanium (Si), and zinc (Zn) is formed by depositing an oxide nanowire array containing at least one selected from the group consisting of to form a sensing film.

Optionally, palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO), nickel on the surface of the oxide nanowire array A catalyst containing at least one metal selected from the group consisting of (Ni), silver (Ag), gold (Au), and copper oxide (CuO) may be formed.

In the manufacturing method of the gas detection sensor according to the present invention, details of the substrate, the source-drain electrode, and the oxide nanowire array are as described above.

In particular, the deposition of the oxide nanowire array may be performed through a glancing angle deposition (GLAD) process. At this time, a known E-beam evaporator may be used for the GLAD process, , Specific conditions of the GLAD process are preferably as follows, but are not limited thereto:

1) Tilting angle: 75 ~ 85°

2) Length: 100 ~ 300nm

3) Deposition rate: 0.5 ~ 5Å /s

4) Vacuum degree: 1.0 × 10 ^-6 ~ 10.0 × 10 ^{- 6} torr (initial) / 1.0 × 10 ^-5 ~ 10.0 × 10 ^-5 torr (during operation)

5) Rotation speed: 10 ~ 20rpm

6) Voltage: 4.0 ~ 5.0V

7) Current: 10 ~ 20A

Acetylene detection system

The present invention includes a power supply unit for supplying power; a driving unit for driving an operation of the sensing unit from the power supplied from the power supply unit; a sensing unit including the acetylene detection sensor; a determination unit for determining whether acetylene is sensed by calculating a response according to Equation 2 below from the resistance value calculated from the magnitude of the current detected by the sensing unit and comparing it with a reference reactivity; And it provides an acetylene detection system comprising a display unit for displaying the result determined by the determination unit:

[Equation 2]

In Equation 2, R ₀ is a resistance value before sensing acetylene, and Rg is a resistance value after sensing acetylene.

4 is a diagram showing an acetylene detection system according to an embodiment of the present invention.

As shown in FIG. 4, the acetylene detection system according to an embodiment of the present invention includes a power supply unit 110 for supplying power; a driving unit 120 for driving an operation of the sensing unit from the power supplied from the power supply unit; a sensing unit 130 including the acetylene detection sensor; a determination unit 140 for determining whether acetylene is sensed by calculating a response from the resistance value calculated from the magnitude of the current detected by the sensing unit and comparing it with a reference reactivity; and a display unit 150 for displaying the result determined by the determination unit.

An acetylene detection system according to the present invention includes a power supply unit, a driving unit, a sensing unit, a determination unit and a display unit.

Specifically, the determination unit includes a microprocessor and an analog-to-digital converter (A/D Converter), and the determination procedure is as follows. First, the analog-to-digital converter of the determination unit converts the magnitude of the current detected by the sensing unit into a current value. Next, the microprocessor of the determination unit calculates a resistance value from the converted current value, calculates a reactivity from the calculated resistance value, and finally compares the calculated reactivity with a preset reference reactivity to determine whether acetylene is detected. can judge At this time, the determination of whether acetylene is detected is to determine that acetylene is sensed when the calculated reactivity exceeds a predetermined reference reactivity. In addition, the resistance value of the sensing unit required for setting the standard reactivity is the same as the resistance value before sensing acetylene.

In addition, the display unit is for displaying the result determined by the determination unit in a predetermined method such as text, and may be formed of a predetermined display means such as an LED.

As described above, the acetylene detection sensor according to the present invention includes an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn). Characterized in that a film is applied, the oxide nanowire array has high reactivity to acetylene.

In particular, by optimizing the length of the oxide nanowire array or optimizing the operating temperature of the acetylene detection sensor, the reactivity to acetylene can be further improved, so that it can be used not only in dry air but also in insulating oil without installing a separate heater. , can have a high reactivity to acetylene.

Hereinafter, a preferred embodiment is presented to aid understanding of the present invention. However, the following examples are provided to more easily understand the present invention, and the content of the present invention is not limited by the following examples.

[ Example ]

Example One

After depositing electrode materials made of Pt, which are spaced apart from each other by about 8 μm, on a substrate made of Si and an insulating layer made of SiO ₂ , a photosensitive material is applied to perform photolithography and lift-off. Source-drain electrodes were patterned by combination (width × length = about 35 μm × about 12 μm, thickness = about 5 μm). An SnO ₂ nanowire array was deposited between the electrodes through a glancing angle deposition (GLAD) process.

At this time, it is confirmed that the length of the oxide nanowires in the SnO ₂ nanowire array is about 100 nm, the diameter is about 30 to 40 nm, and the spacing is about 20 to 30 nm. Thereafter, a Pd catalyst having a thickness of about 10 nm was deposited on the surface of the SnO ₂ nanowire array using sputtering equipment to form a sensing film (see FIG. 5), thereby finally manufacturing an acetylene sensor.

Example 2

By changing the specific conditions of the GLAD process, it was carried out in the same manner as in Example 1, except that the length of the oxide nanowires in the SnO ₂ nanowire array was adjusted to about 200 nm.

Example 3

By changing the specific conditions of the GLAD process, it was carried out in the same manner as in Example 1, except that the length of the oxide nanowires in the SnO ₂ nanowire array was adjusted to about 300 nm.

Example 4

By changing the specific conditions of the GLAD process, it was carried out in the same manner as in Example 1, except that the length of the oxide nanowires in the SnO ₂ nanowire array was adjusted to about 500 nm.

Example 5

By changing the specific conditions of the GLAD process, it was carried out in the same manner as in Example 1, except that the length of the oxide nanowires in the SnO ₂ nanowire array was adjusted to about 1 μm.

6 is a change in response according to maximum response and detection time after detecting low concentration (10 ppm) of acetylene in the acetylene sensor prepared in Examples 1 to 5 in dry air in a chamber at 250 ° C. is a graph that shows

As shown in FIG. 6, the acetylene detection sensors prepared in Examples 1 to 5 apply oxide nanowires having a length of 100 nm to 1 μm, and have a high maximum response to acetylene at a low concentration (10 ppm). level is confirmed. In particular, the acetylene detection sensors prepared in Examples 3 and 4 applied oxide nanowires having a length of 300 nm to 500 nm, and it was confirmed that the maximum response to low concentration (10 ppm) of acetylene was greatly improved. Moreover, the acetylene detection sensor prepared in Example 3 applied an oxide nanowire having a length of 300 nm, and it was confirmed that the maximum response to low concentration (10 ppm) of acetylene was the most improved, and the optimized oxide nanowire was able to derive the length of

Figure 7 shows the maximum response and response according to detection time after detecting low concentration (10 ppm) of acetylene with the acetylene sensor prepared in Example 2 in dry air in a chamber at 50 ° C to 350 ° C This is a graph showing the change.

As shown in FIG. 7, in the case of the acetylene sensor manufactured according to Example 2, 200 ° C to 300 ° C corresponds to the optimized operating temperature. At this time, the maximum response to low concentration (10 ppm) of acetylene (Maximum Response ) is found to be about 400% or more.

8 is a graph showing the change in surface resistance after detecting high concentration (1000 ppm) of acetylene without installing a separate heater in the acetylene sensor prepared in Example 3 in insulating oil at 80 ° C.

As shown in FIG. 8, in the case of the acetylene sensor manufactured in Example 3 in 80 ° C. insulating oil (Dongnam Oil Industry, KS No. 1 Type 2), high concentration (1000 ppm) acetylene detection without a separate heater It is confirmed that the change in surface resistance according to is rather large, and it can be seen that it has a high reactivity to acetylene at a high concentration (1000 ppm).

The above description of the present invention is for illustrative purposes, and those skilled in the art can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting.

110: power unit 120: driving unit
130: sensing unit 131: substrate
132: source electrode 133: drain electrode
134: sensing film 140: determination unit
150: display unit

Claims (11)

Board; and
A sensing film formed on the substrate and including an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn),
The oxide nanowire array is doped with n-type or p-type impurities,
The molar ratio of the oxide and the impurity is 99.9: 1 to 90: 1,
Characterized in that the length of the plurality of nanowires constituting the oxide nanowire array is formed differently depending on the concentration range of acetylene to be sensed by the sensing film
Acetylene detection sensor.
According to claim 1,
Characterized in that the length of the oxide nanowire is 250 nm to 400 nm
Acetylene detection sensor.
According to claim 1,
Characterized in that the interval between the oxide nanowires is 1 nm to 40 nm
Acetylene detection sensor.
According to claim 1,
Characterized in that the oxide nanowire array is deposited through a glancing angle deposition (GLAD) process
Acetylene detection sensor.
According to claim 1,
On the surface of the oxide nanowire array, palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO), nickel (Ni) , characterized in that a catalyst containing at least one metal selected from the group consisting of silver (Ag), gold (Au) and copper oxide (CuO) is formed
Acetylene detection sensor.
According to claim 1,
Characterized in that the acetylene detection sensor operates at a temperature of 50 ° C to 500 ° C
Acetylene detection sensor.
According to claim 1,
The acetylene detection sensor has a maximum response of 10% or more according to Equation 1 below to acetylene at a concentration of 10 ppm in dry air or insulating oil
Acetylene detection sensor:
[Equation 1]

In Equation 1, R ₀ is a resistance value before sensing acetylene, and Rg min is a minimum resistance value after sensing acetylene.
(a) preparing a substrate; and
(b) depositing an oxide nanowire array including at least one selected from the group consisting of tin (Sn), tungsten (W), titanium (Si), and zinc (Zn) on the substrate to form a sensing film; do,
The forming of the sensing film further includes doping the oxide nanowire array with n-type or p-type impurities,
The molar ratio of the oxide and the impurity is 99.9: 1 to 90: 1,
The forming of the sensing film is a step of forming different lengths of a plurality of nanowires constituting the oxide nanowire array according to a concentration range of acetylene to be sensed by the sensing film.
Manufacturing method of acetylene detection sensor.
According to claim 8,
(c) Palladium (Pd), platinum (Pt), palladium oxide (PdO), nickel oxide (NiO), samarium oxide (Sm ₂ O ₃ ), reduced graphene oxide (rGO), nickel on the surface of the oxide nanowire array Further comprising the step of forming a catalyst containing at least one metal selected from the group consisting of (Ni), silver (Ag), gold (Au) and copper oxide (CuO)
Manufacturing method of acetylene detection sensor.
According to claim 8,
In step (b), the deposition of the oxide nanoarray is performed through a glancing angle deposition (GLAD) process.
Manufacturing method of acetylene detection sensor.
a power supply unit for supplying power;
a driving unit for driving an operation of the sensing unit from the power supplied from the power supply unit;
A sensing unit including the acetylene detection sensor according to any one of claims 1 to 7;
a determination unit for determining whether acetylene is sensed by calculating a response according to Equation 2 below from the resistance value calculated from the magnitude of the current detected by the sensing unit and comparing it with a reference reactivity; and
Including a display unit for displaying the result determined by the determination unit
Acetylene detection system:
[Equation 2]

In Equation 2, R ₀ is a resistance value before sensing acetylene, and Rg is a resistance value after sensing acetylene.

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