KR102395917B1 - Display device and manufacturing method thereof - Google Patents

Abstract

a substrate, a first electrode provided on the substrate, provided to overlap with an end of the first electrode, a pixel defining layer dividing the first electrode into a light emitting area and a non-emissive area, separated by the pixel defining layer A display including a light-emitting layer provided on the light-emitting region of the first electrode, a second electrode provided on the light-emitting layer, and a protrusion provided on the pixel defining layer and provided in a region overlapping with an end of the first electrode provide the device.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a display device including a protrusion provided on a pixel defining layer, and a manufacturing method thereof.

A display device includes a plurality of pixels provided in an area defined by a black matrix or a pixel defining layer. A display device includes a liquid crystal display (LCD), an organic light emitting diode display (OLED display), a plasma display panel (PDP), and an electrophoretic display device according to a light emitting method. display), etc.

Among these display devices, the organic light emitting diode display uses a phenomenon in which electrons and holes combine in an organic material to emit light by themselves. It may be classified into an organic light emitting display device. An active matrix organic light emitting diode display includes a switch element such as a thin film transistor inside each pixel to control light emission of each pixel.

The organic light emitting diode display includes a display substrate, wherein the display substrate includes a display region including a plurality of pixels and a non-display region in which wirings for applying a plurality of signals and driving voltages to each of the pixels are provided. Also, the non-display area may include a sealing area to which a sealing material for bonding the lower substrate and the upper substrate is applied.

On the other hand, as the demand for slimming of the non-display area in the recent display device increases, the area of the sealing area is reduced, so that it is difficult to adhere the sealing material to the substrate. Accordingly, in order to effectively improve the adhesion between the sealing material and the substrate in the sealing region, a method of increasing the contact area by forming a plurality of contact holes in the sealing region is used.

However, when a plurality of contact holes are formed in the sealing region, a photoresist or a photosensitive material applied during a manufacturing process of the organic light emitting display device may remain in the contact holes. That is, a photoresist or a photosensitive material may remain in the contact hole due to insufficient exposure dose due to the location and structure of the contact hole.

When the exposure amount is increased from a reference value to remove the photoresist or photosensitive material remaining in the contact hole, the photoresist or photosensitive material remaining in the contact hole may be removed, but in another area (eg, the light emitting area). Since the exposure amount of is increased than the reference value, a problem such as an increase in the area of the light emitting region may occur.

Accordingly, an object of the present invention is to provide a display device capable of preventing an increase in the area of a light emitting region due to excessive exposure without a photoresist or a photosensitive material remaining in a contact hole of a sealing region, and a method of manufacturing the same.

a substrate, a first electrode provided on the substrate, provided to overlap with an end of the first electrode, a pixel defining layer dividing the first electrode into a light emitting area and a non-emissive area, separated by the pixel defining layer A display including a light-emitting layer provided on the light-emitting region of the first electrode, a second electrode provided on the light-emitting layer, and a protrusion provided on the pixel defining layer and provided in a region overlapping with an end of the first electrode provide the device.

The protrusion may be provided along an edge of the light emitting area.

The width of the protrusion may be 1 μm to 5 μm.

The height of the protrusion may be 1 μm to 5 μm.

The protrusions include polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, and unsaturated polyester resin. polyesters resin), poly(phenyleneethers) resin, poly(phenylenesulfides) resin, and benzocyclobutene (BCB).

The pixel defining layer may be made of the same material as the protrusion.

Forming a thin film transistor on a substrate, forming a planarization layer having a via hole exposing a portion of a drain electrode of the thin film transistor on the substrate on which the thin film transistor is formed, forming a first electrode on the planarization layer forming, on the first electrode, a pixel defining layer dividing the first electrode into a light emitting area and a non-emission area, forming a light emitting layer on the light emitting area of the first electrode, and on the light emitting layer and forming a second electrode, wherein the forming of the pixel defining layer includes: applying a material for forming a pixel defining layer on the substrate on which the first electrode is formed; Provided is a method of manufacturing a display device, comprising: applying a material for forming a protrusion to an area corresponding to an end of a first electrode; and exposing the light emitting area of the first electrode to form a pixel defining layer and a protrusion.

The protrusion may be formed along an edge of the light emitting area.

The width of the protrusion may be 1 μm to 5 μm.

The height of the protrusion may be 1 μm to 5 μm.

The material for forming the protrusion is a polyacrylates resin, an epoxy resin, a phenolic resin, a polyamides resin, a polyimides rein, an unsaturated polyester. It can be formed of any one of unsaturated polyesters resin, poly(phenyleneethers) resin, poly(phenylenesulfides) resin, and benzocyclobutene (BCB). there is.

The pixel defining layer may be formed of the same material as the protrusion.

According to the display device and the manufacturing method thereof of the present invention, it is possible to prevent an increase in the area of the light emitting region due to excessive exposure while photoresist or photosensitive material does not remain in the contact hole of the sealing region.

1 is a plan view schematically illustrating a display device according to the related art.
FIG. 2 is a circuit diagram illustrating one pixel in the display device according to the related art illustrated in FIG. 1 .
FIG. 3 is an enlarged partial view of area A in the display device according to the related art illustrated in FIG. 1 .
4 and 5 are cross-sectional views taken along II in the display device according to the related art illustrated in FIG. 1 .
6 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the present invention.
7 is a plan view illustrating a display device according to an exemplary embodiment of the present invention.
8 to 11 are cross-sectional views illustrating a method of manufacturing a display device according to an exemplary embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

Since the present invention is capable of various modifications and can be implemented in various forms, only specific embodiments are illustrated in the drawings and the text will be described with reference to them. However, it should be understood that the scope of the present invention is not limited to the above specific embodiments, and all changes, equivalents or replacements included in the spirit and scope of the present invention are included in the scope of the present invention.

In the present specification, when it is said that a part is connected to another part, it includes not only a case in which it is directly connected, but also a case in which it is electrically connected with another element interposed therebetween. Also, when it is said that a part includes a certain component, it means that other components may be further included, rather than excluding other components, unless otherwise specifically stated.

In this specification, terms such as first, second, third, etc. may be used to describe various components, but these components are not limited by the terms. The above terms are used for the purpose of distinguishing one component from other components. For example, without departing from the scope of the present invention, a first component may be referred to as a second or third component, and similarly, the second or third component may be alternately named.

In order to clearly explain the present invention, parts irrelevant to the description are omitted, and the same reference numerals are given to the same or similar elements throughout the specification.

1 is a plan view schematically illustrating a display device according to the related art. Referring to FIG. 1 , a display device 100 according to the related art includes a substrate 110 , wherein the substrate 110 is formed in an active area AA for displaying an image and an edge of the display area. It includes a non-display area (NDA).

The display area AA includes a plurality of pixels P arranged in a matrix form. The plurality of pixels P may receive a data signal, a scan signal, and a driving voltage through a plurality of data lines, scan lines, and power lines included in the wiring unit WA, respectively.

FIG. 2 is a circuit diagram illustrating one pixel P in the display device according to the related art illustrated in FIG. 1 . Referring to FIG. 2 , the pixel P is turned on by a scan signal applied from a scan line SL to transmit a data signal, a switching transistor T _s , and the transferred data signal. It may include a storage capacitor (C _st ) for storing the data, and a driving transistor (T _d ) for driving the organic light emitting diode (OLED) according to the transmitted data signal.

Although the pixel P is illustrated as having a 2Tr1C structure in FIG. 2 , the present invention is not limited thereto, and the pixel P includes an additional transistor for compensating or initializing the threshold voltage of the driving transistor T _d and driving the same. It may further include a compensation signal for. In the present invention, the transistor constituting the pixel P is illustrated as a PMOS transistor, but the present invention is not limited thereto, and the transistor constituting the pixel P may be formed of an NMOS transistor.

Referring back to FIG. 1 , the non-display area NDA is formed with a plurality of wires providing a plurality of driving signals and a plurality of driving voltages supplied from the outside through the pad part PA to the display area AA. and a data driver integrated circuit IC for applying a data signal to the wiring unit WA and the display area AA. In addition to the wiring part WA, the non-display area NDA includes a sealing area SA to which a sealing material for bonding the substrate 110 and encapsulation glass, etc. is applied.

FIG. 3 is an enlarged partial view of area A in the display device 100 according to the related art illustrated in FIG. 1 . Referring to FIG. 3 , the sealing area SA provided in the non-display area NDA may include a plurality of contact holes (CNT holes). The contact area between the sealing material and the substrate 110 is increased by the contact hole (CNT hole), so that adhesion between the sealing material and the substrate can be effectively achieved.

4 and 5 are cross-sectional views taken along line I-I in the display device 100 according to the related art illustrated in FIG. 3 . 4 and 5 , the display device 100 according to the related art is divided into a display area AA and a sealing area SA.

The display area AA of the display device 100 according to the related art includes a substrate 110 , a buffer layer 115 provided on the substrate 110 , and a semiconductor layer 120 provided on the buffer layer 115 . , the gate insulating film 130 provided on the semiconductor layer 120 , the gate electrode 135 provided on the gate insulating film 130 , the interlayer insulating film 140 provided on the gate electrode 135 , the The source electrode 145a and the drain electrode 145b are respectively connected to the source region 121a and the drain region 121b of the semiconductor layer 120 through the gate insulating layer 130 and the interlayer insulating layer 140 , and the source A passivation layer 150 provided on the electrode 145a and the drain electrode 145b, a planarization layer 155 provided on the passivation layer 150, and a planarization layer 155 provided on the passivation layer A first electrode 160 connected to the drain electrode 145b through 150 and the planarization layer 155 is provided on the first electrode 160 and has a ratio to an emission area EA A pixel defining layer 170 dividing a non-emission area (NEA), a light-emitting layer 180 provided in the light-emitting area EA on the first electrode 160, and a first layer provided on the light-emitting layer 180 It includes two electrodes 190 .

The sealing area SA of the display device 100 according to the related art includes a substrate 110 , a buffer layer 115 provided on the substrate 110 , a gate insulating layer 130 provided on the buffer layer 115 , and The interlayer insulating layer 140 may be provided on the gate insulating layer 130 , and a plurality of contact holes 145 may be provided in the interlayer insulating layer 140 .

The pixel defining layer 170 is formed on the substrate 110 on which the first electrode 160 is formed, after a material (not shown) for forming the pixel defining layer is applied over the entire surface, and then through a photolithography process to form a light emitting region ( EA) and the sealing area SA may be formed through a process in which the material for forming the pixel defining layer is removed.

The material for forming the pixel defining layer may be formed of a photoresist or a photosensitive material. That is, a pattern of a desired shape can be formed through a development process after exposure using a mask. Hereinafter, it is assumed that the material for forming the pixel defining layer is a positive photoresist from which an exposed region is removed during development.

On the other hand, the material for forming the pixel defining layer applied to the sealing area SA is formed due to the location of the sealing area SA and the structure and location of the contact hole 145 existing in the sealing area SA. There is a problem in that not all of the contact hole 145 is removed due to insufficient exposure, and a part remains in the contact hole 145 as shown in FIG. 4 .

As such, when the material for forming the pixel defining layer remains in the contact hole 145 , the adhesive strength of the sealing material provided on the sealing area SA is reduced in a subsequent process.

In addition, when the exposure amount is increased to remove all of the material for forming a pixel defining layer remaining in the contact hole 145 of the sealing area SA, as shown in FIG. 5 , the contact hole of the sealing area SA Although all of the material for forming the pixel defining layer present at 145 may be removed, the amount of exposure in the area except for the sealing area SA (eg, the light emitting area EA) becomes excessive.

As a result, the area of the light emitting area EA increases due to the excessive exposure amount, and the area of the overlapping area OA in which the first electrode 160 and the pixel defining layer 170 overlap is decreased. When the area of the overlapping area OA is reduced, the light emitting layer 180 is destroyed by the electric field generated between the first electrode 160 and the second electrode 190 , and a short circuit defect may occur. Cancer spots may occur.

Accordingly, the present invention aims to provide a display device capable of preventing the light emitting area EA from expanding due to excessive exposure while removing all of the material for forming a pixel defining layer present in the contact hole of the sealing area SA. do.

6 is a cross-sectional view illustrating a display device according to an exemplary embodiment of the present invention. Referring to FIG. 6 , the display device 200 according to the present invention may include a display area AA and a sealing area SA.

The display area AA of the display device 200 according to an example of the present invention includes a substrate 210 , a buffer layer 215 provided on the substrate 210 , and a semiconductor layer ( 220 ), a gate insulating layer 230 provided on the semiconductor layer 220 , a gate electrode 235 provided on the gate insulating layer 230 , and an interlayer insulating layer 240 provided on the gate electrode 235 . , a source electrode 245a and a drain electrode 245b respectively connected to the source region 221a and the drain region 221b of the semiconductor layer 220 through the gate insulating film 230 and the interlayer insulating film 240; A passivation layer 250 provided on the source electrode 245a and the drain electrode 245b, a planarization layer 255 provided on the passivation layer 250, and a planarization layer 255 provided on the planarization layer 255, A first electrode 260 connected to the drain electrode 221b through the passivation layer 250 and the planarization layer 255 is provided on the first electrode 260 and includes an emission area (EA). A pixel defining layer 270 that separates a non-emission area from a non-emission area (NEA), a protrusion 275 provided on the pixel defining layer 270, and an emission area EA on the first electrode 260 and a light emitting layer 280 provided on the light emitting layer 280 and a second electrode 290 provided on the light emitting layer 280 .

The sealing area SA of the display device 200 according to the present invention includes a substrate 210 , a buffer layer 215 provided on the substrate 210 , a gate insulating layer 230 provided on the buffer layer 215 , and An interlayer insulating layer 240 is provided on the gate insulating layer 230 , and a plurality of contact holes 245 may be provided in the interlayer insulating layer 240 .

The substrate 210 may be formed of a glass, quartz, ceramic, or plastic substrate. As the plastic substrate, polyimide resin, acrylic resin, polyacrylate resin, polycarbonate resin, polyether resin, polyethylene terephthalate resin, sulfonic acid resin, etc. may be used. In addition, it may be provided as a metallic substrate made of stainless steel, etc. there is.

The buffer layer 215 may be made of a silicon compound and may have a single-layer or multi-layer structure. The buffer layer 215 serves to prevent penetration of impurity elements or moisture components and to planarize the substrate surface. The buffer layer 215 is not a necessary configuration and may be omitted depending on the type and process of the substrate.

The semiconductor layer 220 is divided into a channel region 221 and a source region 221a and a drain region 221b formed on both sides of the channel region 221 , respectively. The channel region 221 is a polysilicon layer not doped with an impurity, and the source region 221a and the drain region 221b are a polysilicon layer doped with an impurity. The semiconductor layer 220 is divided into an n-type semiconductor doped with phosphorus (P) ions and a p-type semiconductor doped with boron (B) ions according to impurities doped into the source region 221a and the drain region 221b. can

The gate electrode 235 , the source electrode 145a , and the drain electrode 145b may include a metal, an alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, or the like. For example, aluminum (Al), silver (Ag), tungsten (W), copper (Cu), nickel (Ni), chromium (Cr), molybdenum (Mo), titanium (Ti), platinum (Pt), tantalum (Ta) and alloys thereof, aluminum nitride (AlNx), tungsten nitride (WNx), chromium nitride (CrNx), titanium nitride (TiNx), tantalum nitride (TaNx), zinc oxide (ZnOx), indium tin oxide (ITO), It may include tin oxide (SnOx), indium oxide (InOx), gallium oxide (GaOX), and indium zinc oxide (IZO). These may be used alone or in combination with each other.

The gate insulating film 130 , the interlayer insulating film 140 , the protective layer 150 and the planarization layer 155 are a silicon nitride film (SiNx), a silicon oxide film (SiOx), a hafmium oxide film (HfOx), an aluminum oxide film (AlOx), It may include a yttrium oxide layer (YOx) and a tantalum oxide layer (TaOx). These may be used alone or in combination with each other.

When the display device 200 according to an example of the present invention is a bottom emission type, the first electrode 260 may be provided as a transparent electrode, and the second electrode 290 may be provided as a reflective electrode. Similarly, when the display device 200 according to an example of the present invention is a top emission type, the first electrode 260 may be provided as a reflective electrode, and the second electrode 290 may be provided as a transparent electrode.

The transparent electrode may include at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (TO), and zinc oxide (ZnO). The reflective electrode includes silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), It may include at least one selected from the group consisting of chromium (Cr).

The light emitting layer 280 may include a red light emitting layer, a green light emitting layer, and a blue light emitting layer including a red light emitting material, a green light emitting material, and a blue light emitting material according to each pixel, and the light emitting layer 280 is the light emitting layer 280 . may include a hole injection layer (HIL) and a hole transport layer (HTL) for smooth hole injection, and an electron transport layer (ETL) and electron injection for smooth electron injection An Electro-tron Injection Layer (EIL) may be further included.

The pixel defining layer 270 includes polyacrylates resin, epoxy resin, phenolic resin, polyamides resin, polyimides rein, and unsaturated poly At least one selected from the group consisting of unsaturated polyesters resin, poly(phenyleneethers) resin, poly(phenylenesulfides) resin, and benzocyclobutene (BCB) may include

The pixel defining layer 270 may be formed of a positive photoresist or a negative photoresist. The positive photoresist is a material from which the light-irradiated portion is removed by softening the structure of the light-irradiated portion in a photolithography process. The negative photoresist is a material in which the structure of the portion irradiated with light is strengthened and the portion not irradiated with light is removed. Hereinafter, for convenience of description, it is assumed that the pixel defining layer 270 is a positive photoresist.

The pixel defining layer 270 may be provided on the first electrode 260 and overlap an edge region of the first electrode 260 . In particular, a protrusion 275 may be provided in a region on the pixel defining layer 270 where the first electrode 260 and the pixel defining layer 270 overlap. The protrusion 275 may be made of the same material as the pixel defining layer 270 , and although the protrusion 275 is illustrated in a trapezoidal shape in FIG. 6 , the protrusion 275 is not necessarily limited thereto, and the protrusion has a dome shape or a square shape. It may be formed in a shape or the like.

The width w of the protrusion 275 may be formed in a range of 1 μm to 5 μm, but is not limited thereto. In addition, the height h of the protrusion 275 may be formed in a range of 1 μm to 5 μm, but is not limited thereto. In particular, it is preferable that the protrusion 275 is provided on the pixel defining layer 270 to be lower than a general spacer for controlling a cell gap.

7 is a plan view illustrating a display device according to the present invention. 7 , the protrusion 275 may be formed to have a constant width w along the edge of the light emitting area EA.

8 to 11 are diagrams illustrating a method of manufacturing a display device according to the present invention.

The display device according to the present invention includes the steps of: forming a thin film transistor on a substrate; forming a first electrode connected to a drain electrode of the thin film transistor; The method includes forming a pixel defining layer dividing the light emitting area, forming a light emitting layer on the light emitting area of the first electrode, and forming a second electrode on the light emitting layer.

Referring to FIG. 8 , a thin film transistor is formed in the display area AA of the substrate 210 , and a plurality of contact holes 245 are formed in the sealing area SA of the substrate 210 .

First, a buffer layer 215 is formed on the substrate 210 . The buffer layer 215 may be formed using a silicon compound. For example, the buffer layer 55 may include at least one selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, and silicon carbonitride.

A semiconductor layer 220 is formed on the buffer layer 215 . The semiconductor layer 220 may be formed by applying a semiconductor layer forming material, patterning, and then crystallizing the semiconductor layer 220 . The semiconductor layer may be formed using a chemical vapor deposition process or a sputtering process. In addition, the crystallization process may include a laser irradiation process and a heat treatment process.

A gate insulating layer 230 is formed on the substrate 210 on which the semiconductor layer 220 is formed. The gate insulating layer 230 is at least one selected from the group consisting of a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), a hafmium oxide layer (HfOx), an aluminum oxide layer (AlOx), a yttrium oxide layer (YOx), and a tantalum oxide layer (TaOx). may include, and may be formed using a chemical vapor deposition process, a spin coating process, a sputtering process, a vacuum deposition process, and a printing process.

A gate electrode 235 is formed on the gate insulating layer 230 . The gate electrode 235 may be formed by coating and patterning a material for forming a gate electrode on the gate insulating layer 230 .

A source region 221a and a drain region 221b are formed in the semiconductor layer 220 by implanting impurities into the semiconductor layer 220 using the gate electrode 235 as an ion implantation mask. In this case, the impurities are not implanted into the central portion of the semiconductor layer 220 positioned under the gate electrode 235 , and accordingly, the central portion of the semiconductor layer 220 becomes the channel region 221 .

An interlayer insulating layer 240 covering the gate electrode 235 is formed on the gate insulating layer 230 . The interlayer insulating layer 240 is at least one selected from the group consisting of a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), a hafmium oxide layer (HfOx), an aluminum oxide layer (AlOx), a yttrium oxide layer (YOx), and a tantalum oxide layer (TaOx). may include, and may be formed using a chemical vapor deposition process, a spin coating process, a sputtering process, a vacuum deposition process, and a printing process.

Subsequently, a via hole is formed through the gate insulating layer 230 and the interlayer insulating layer 240 to expose the source region 221a and the drain region 221b of the semiconductor layer 220 . In this case, a plurality of contact holes 245 are simultaneously formed in the sealing area SA of the substrate 210 .

Referring to FIG. 9 , a material for forming a source electrode and a drain electrode is applied to fill the via hole, and then a source electrode 245a and a drain electrode 245b are formed by patterning.

A passivation layer 250 and a planarization layer 255 covering the source electrode 245a and the drain electrode 245b are formed on the interlayer insulating layer 240 . The protective layer 250 and the planarization layer 255 include a photoresist, an acrylic polymer, a polyimide-based polymer, a polyamide-based polymer, a siloxane-based polymer, a polymer containing a photosensitive acrylic carboxyl group, a novolak resin, an alkali-soluble resin, and a silicone. It may include at least one selected from the group consisting of a nitride film (SiNx), a silicon oxide film (SiOx), a hafmium oxide film (HfOx), an aluminum oxide film (AlOx), a yttrium oxide film (YOx), and a tantalum oxide film (TaOx), and a chemical vapor phase It may be formed using a deposition process, a spin coating process, a sputtering process, a vacuum deposition process, and a printing process.

A first electrode 260 may be formed on the planarization layer 255 . The first electrode 260 may pass through the passivation layer 250 and the planarization layer 255 to be connected to the drain electrode 245b.

Referring to FIG. 10 , a pixel defining layer 270 is formed on the substrate 210 on which the first electrode 260 is formed.

The forming of the pixel defining layer 270 may include applying a material for forming a pixel defining layer on the substrate 210 on which the first electrode 260 is formed, and the first electrode on the material for forming the pixel defining layer 270 . The method includes forming the protrusion 275 in an area corresponding to the end of the , and removing a material for forming a pixel defining layer present in the light emitting area EA and the sealing area SA through an exposure process.

The protrusion 275 may be formed of the same material as the pixel defining layer 270 . In FIG. 10 , the protrusion 275 is illustrated as being formed in a trapezoidal shape, but is not limited thereto, and the protrusion 275 may be formed in a dome shape or a rectangular shape.

The width w of the protrusion 275 may be 1 μm to 5 μm, and the height h of the protrusion 275 may be 1 μm to 5 μm, but is not limited thereto. In particular, the protrusion 275 is preferably provided on the pixel defining layer 270 to be lower than a general protrusion for controlling a cell gap.

11 , in a state in which the protrusion 275 is formed in an area corresponding to the end of the first electrode, for forming a pixel defining layer present on the light emitting area EA and the sealing area SA When the exposure process for removing the material is performed, the area OA in which the first electrode 260 and the pixel defining layer 270 overlap due to the protrusion 275 does not increase even if the exposure amount is increased. do. Accordingly, the area of the light emitting area EA may not increase while preventing the material for forming the pixel defining layer from remaining in the contact hole 245 of the sealing area SA.

In the above, examples of the present invention have been described with reference to the accompanying drawings, but those of ordinary skill in the art to which the present invention pertains may be embodied in other specific forms without changing the technical spirit or essential features of the present invention. you will be able to understand Therefore, it should be understood that the examples described above are illustrative in all respects and not restrictive.

110, 210: substrate 115, 215: buffer layer
120, 220: semiconductor layer 130, 230: gate insulating film
135, 235: gate electrode 140, 240: interlayer insulating film
145a, 245a: source electrode 145b, 245b: drain electrode
150, 250: protective layer 155, 255: planarization layer
160, 260: first electrode 170, 270: pixel defining layer
175, 275: protrusion 180, 280: light emitting layer
190, 290: second electrode

Claims (14)

a substrate including a display area;
a first electrode provided on the substrate;
a pixel defining layer provided to overlap an end of the first electrode and dividing the first electrode into a light-emitting area and a non-emission area;
a light emitting layer provided on the light emitting area of the first electrode divided by the pixel defining layer;
a second electrode provided on the light emitting layer;
an insulating film formed on the substrate; and
a protrusion provided on the pixel defining layer and provided in a region overlapping with an end of the first electrode;
A display device in which a plurality of contact holes are formed in the insulating layer. The display device of claim 1 , wherein the protrusion is provided along an edge of the light emitting area. The display device of claim 1 , wherein the protrusion has a width of 1 μm to 5 μm. The display device of claim 1 , wherein a height of the protrusion is 1 μm to 5 μm. According to claim 1, wherein the protrusion is polyacrylic resin (polyacrylates resin), epoxy resin (epoxy resin), phenolic resin (phenolic resin), polyamide-based resin (polyamides resin), polyimide-based resin (polyimides rein), unsaturated Any one material of unsaturated polyesters resin, poly(phenyleneethers) resin, poly(phenylenesulfides) resin, and benzocyclobutene (BCB) Including display device. The display device of claim 5 , wherein the pixel defining layer is made of the same material as the protrusion. The display device of claim 1 , wherein the substrate further comprises a sealing area formed at an edge of the display area. forming a thin film transistor on a substrate including a display area;
forming an insulating film on the thin film transistor;
forming a plurality of contact holes in the insulating layer;
forming a planarization layer having a via hole exposing a portion of a drain electrode of the thin film transistor on the substrate on which the thin film transistor is formed;
forming a first electrode on the planarization layer;
forming a pixel defining layer on the first electrode to divide the first electrode into a light-emitting area and a non-emission area;
forming a light emitting layer on the light emitting region of the first electrode; and
Including; forming a second electrode on the light emitting layer;
The forming of the pixel defining layer includes:
applying a material for forming a pixel defining layer on the substrate on which the first electrode is formed;
applying a material for forming a protrusion on the material for forming a pixel defining layer on an area corresponding to an end of the first electrode; and
and exposing the light emitting region of the first electrode to form a pixel defining layer and a protrusion. The method of claim 8 , wherein the protrusion is formed along an edge of the light emitting area. The method of claim 8 , wherein the protrusion has a width of 1 μm to 5 μm. The method of claim 8 , wherein the protrusion has a height of 1 μm to 5 μm. 9. The method of claim 8, wherein the material for forming the protrusion is a polyacrylates resin, an epoxy resin, a phenolic resin, a polyamides resin, or a polyimides resin. ), unsaturated polyesters resin, poly(phenyleneethers) resin, poly(phenylenesulfides) resin, and any one of benzocyclobutene (BCB) A method of manufacturing a display device formed of a material of The method of claim 8 , wherein the pixel defining layer is formed of the same material as the protrusion. The method of claim 8 , wherein the substrate further comprises a sealing area formed at an edge of the display area.

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