KR102118604B1 - Line Type Ion Beam Emission Device - Google Patents

Abstract

The present invention relates to a technology of generating plasma as a process gas is ionized in a space between a cathode and an anode and emitting ions such that ions of plasma are concentrated on a focal distance in the form of a line corresponding to a central line through the anode in the form that is curved upward with respect to the central line, thereby forming an ion beam in the form of a line at a shorter distance through a grid electrode located on the lower side thereof. A line type ion beam emission device includes: an ion beam generating part provided with a cathode, to which an RF voltage is applied and in which an anode, to which a negative voltage is applied, is disposed at a location spaced apart from the cathode on the lower side thereof to form plasma by ionizing a process gas between the cathode and the anode, configured to emit ions of plasma to the lower side through a plurality of holes formed in the anode due to a voltage difference between the cathode and the anode, in which the anode forms an insulation layer having a predetermined thickness between the first and second metal layers in a plate shape of a size corresponding to the cathode, having a curved shape, the upper side of which is curved to have a focal location in the lengthwise direction corresponding to the central line, and configured to emit the ions of plasma while concentrating the ions in the form of a line corresponding to a central line.

Description

Line Type Ion Beam Emission Device

In the present invention, the process gas is ionized in the space between the cathode and the anode to generate plasma, and ions on the plasma are concentrated at the focal length of the line shape corresponding to the center line through the anode curved upwardly with respect to the center line. It relates to a technology that enables the formation of a line-shaped ion beam at a shorter distance through a grid electrode located below it by emitting ions.

When a high-energy particle collides with a solid surface using an accelerator, atoms of a target material exchange momentum due to a full-elastic collision, so that they protrude from the surface.

In this way, when ions collide with kinetic energy greater than the inter-atomic bond energy of a material, the inter-atomic atoms of the material are pushed to different positions by this ionic shock, and the phenomenon that the surface escape of atoms occurs is "sputtering ( sputtering).

In the thin film deposition process, sputtering can be viewed as a concept that includes two processes: the release of a target atom and the attachment of a substrate to the atom.

The sputtering process has an advantage that almost any material can be used as a target, and thus a metal film, an insulating film, etc. are formed on the wafer surface.

In general, fine processing using ions includes ion milling, ion etching (RIE) processing, focused ion beam (FIB) processing, and ion implantation.

The ion milling process and ion etching process can use a mask to process a large area, but the precision and processing flexibility are poor, while the focused ion beam processing moves the ion beam size and intensity, the ion beam irradiation time per pixel, and the ion beam. The size and shape of the pattern can be formed in various ways depending on the method of making it, so it has the characteristics of high precision and process flexibility.

Prior Art Document 1 (Korea Patent Publication No. 2016-0042312, ion beam processing apparatus capable of multi-stage control of ion beam energy and substrate processing method using the same) uses ion beam to perform substrate processing such as etching, implantation, and ion plating. Disclosed is an ion beam processing apparatus and a substrate processing method using the same.

In the prior art document 1, two or more electrode plates have different predetermined voltages.

Is applied, and a control voltage is applied to the substrate holder, the reaction gas is injected into the ion generator, and then high-frequency power for plasma generation is applied to the ion generator, and the ions generated in the previous step are the primary ion beam controllers. It passes through and becomes an ion beam having a predetermined energy, and the ion beam is accelerated by an electric field formed between the primary ion beam control unit and the substrate holder unit, and is configured to be secondary controlled to have a predetermined energy suitable for substrate processing.

In the prior document 1, the primary ion beam control unit is composed of a plurality of electrode plates, and by applying different power sources to each electrode plate, ions generated in the ion generating unit are concentrated.

However, in the structure of the prior document 1, since the ions emitted from the ion generating unit are concentrated using only voltage control, the distance to the position where the ions are concentrated and the ion beam is formed is separated from the primary ion beam control unit by a certain distance or more. Will be.

That is, when considering that the process for the substrate is performed at a position where the ion beam is formed to a certain width or less, when the ions are concentrated in the same manner as in the prior document 1, the size of the chamber having the same corresponds to the ion beam formation position It becomes larger than the size. In addition, when the size of the chamber for the substrate process is increased, a process environment in the chamber, for example, the amount of process gas supplied or the temperature maintenance and pressure maintenance may increase corresponding to the size.

1. Korean Patent Publication No. 2016-0042312 (Name of invention: Ion beam processing device capable of multi-stage control of ion beam energy and substrate processing method using the same)

Accordingly, the present invention was created in view of the above-described circumstances, in which the process gas is ionized in the space between the cathode and the anode to generate plasma, and ions in the plasma are centered through the anode in a curved shape upward relative to the center line. Provided is a line-shaped ion beam emission device that emits ions to be concentrated at a focal length of a line shape corresponding to a line, thereby allowing a line-shaped ion beam to be formed at a shorter distance through a grid electrode positioned below the line. It has a technical purpose.

According to an aspect of the present invention for achieving the above object, a cathode to which an RF power is applied is provided, and an anode to which a negative voltage is applied is disposed at a position spaced apart a certain distance under the process gas between the cathode and the anode. In the ion beam emission device of a line type in which plasma ions are emitted downward through a plurality of holes formed in the anode by forming a plasma by ionizing, and a voltage difference between the cathode and the anode, the anode has a size corresponding to the cathode. The first and second metal layers formed in a plate shape, and the insulating layers made of a material having the same flat structure as the first and second metal layers and having flexible properties including polyimide or epoxy, and the first and second metal layers It is configured in a form arranged between the second metal layers, and gradually increases in size of holes penetrating the first and second metal layers and the insulating layer toward the outer line, and has a focal position in the longitudinal direction corresponding to the center line. Arranged in this curved surface shape, different voltages applied to the first and second metal layers are applied differently, so that the smaller the hole size, the greater the local electric field intensity corresponding to the voltage difference between the first and second metal layers. By setting it to be, a line type ion beam emission device is provided, characterized in that the path of ions in the plasma flowing into and out of the hole is configured to be concentrated in the center line of the anode.

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In addition, according to an aspect of the present invention for achieving the above object, the cathode is formed by disposing a cathode to which a negative voltage is applied at a position spaced a certain distance below the hollow cathode in which a plurality of cathode holes are formed. As the process gas is injected through and the voltage is applied to the hollow cathode, the process gas is ionized in the cathode hole to form plasma, and ions on the plasma are attracted to the anode to which negative voltage is applied, and centralized downward through the anode hole formed in the anode. In the line-type ion beam emission device, the anode has first and second metal layers having a plate shape having a size corresponding to the cathode, and has a predetermined thickness in the same plane structure as the first and second metal layers. In addition, the insulating layer of a material having a flexible property including polyimide or epoxy is formed in a form disposed between the first and second metal layers, and penetrates the first and second metal layers and the insulating layer toward the outer line. The size of the hole is formed by gradually increasing the size of the hole to be formed and having a curved position in the upper direction corresponding to the center line, and applying voltages applied to the first and second metal layers differently. By setting the intensity of the local electric field corresponding to the voltage difference between the first and second metal layers to be smaller, the path of ions in the plasma flowing into and out of the hole is configured to be concentrated to the center line of the anode. A line type ion beam emitting device is provided.

In addition, a grid electrode is additionally disposed on the lower side of the anode, and at least one of the cathode and the grid electrode is formed in a curved shape with a curved upper side based on the center line of the anode. An ion beam emitting device is provided.

In addition, an actuator for setting the upper side to have a curved radius of curvature is coupled to both ends of the anode, and the actuator moves in a direction perpendicular to the bending direction of the corresponding device in response to the rotation of the motor, thereby corresponding device Provided is a line-shaped ion beam emitting device characterized in that the curvature radius of the variable.

In addition, the anode separates a plurality of regions in units of a certain width based on the center line of the plate and applies different levels of negative voltage to each region, but the voltage difference with the cathode is larger as compared to the outer region toward the center line region. A line type ion beam emitting device is provided, characterized in that the voltage level is set to be set.

In addition, the ion beam generator is installed on the inner top of the chamber to perform a process for the substrate disposed on the lower side of the chamber in response to the process gas flowing into the inside of the chamber, the ion beam concentrated to the center line through the anode to the substrate By discharging, an ion beam emitting device having a line shape is provided, characterized in that an ion beam and a process gas react to perform a deposition process or an etching process on a thin film formed on a substrate.

In addition, according to an aspect of the present invention for achieving the above object, a cathode to which a first negative voltage is applied is provided, and an anode to which a second negative voltage smaller than the first voltage is applied at a position spaced apart a predetermined distance below it. Is disposed within the free stroke distance, process gas is ionized between the cathode and the anode, and ions collide with the surface of the cathode due to the potential difference between the cathode and the anode to generate secondary electrons, and the secondary electrons are applied to the anode by the anode voltage. An electron beam generating unit that moves to the side and is emitted downward through a plurality of holes formed in the anode, and is disposed on the lower side of the anode in a plate shape corresponding to the size of the anode, and applies a third negative voltage higher than the second negative voltage. The electrons emitted from the anode ionize the process gas and emit the ions generated by the holes through the holes formed on the plate, thereby comprising a grid electrode performing a process on the thin film formed on the substrate, and the anode The anode has flexible properties including polyimide or epoxy while having a certain thickness in the same plane structure as the first and second metal layers and the first and second metal layers having a plate shape having a size corresponding to the cathode. The insulating layer of the material having a structure is configured to be disposed between the first and second metal layers, and gradually increases the size of the holes penetrating the first and second metal layers and the insulating layer toward the outer line. In addition to arranging the curved surface of the upper side to have a corresponding focal position in the longitudinal direction, the voltages applied to the first and second metal layers are differently applied, so that the smaller the hole size, the smaller the size of the first and second metal layers. Provided is a line type ion beam emission device characterized in that the path of secondary electrons flowing into and out of a hole is configured to be concentrated at the center line of the anode by setting the intensity of the local electric field corresponding to the voltage difference to be large.

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In addition, at least one of the cathode, the anode, and the grid electrode is configured to be coupled with an actuator for setting the upper side to have a curved radius of curvature at both ends thereof, and the actuator is in a curved direction of the corresponding device in response to rotation of the motor A line type ion beam emitting device is provided, characterized in that the curvature radius of a corresponding device is varied by moving in a direction perpendicular to the direction.

In the line-type ion beam emission apparatus according to the present invention, process gas is ionized in the space between the cathode and the anode to generate plasma, and an ion beam having a length corresponding to the center line is generated from the anode curved upward around the center line, By emitting, a desired line-shaped ion beam is formed at a shorter position from the anode to perform thin film deposition and etching processes on the substrate.

Accordingly, an ion beam generator having a shorter focal length and high ion concentration efficiency and a thin film processing apparatus using the same can be implemented.

1 is a view for explaining the configuration of a line-shaped ion beam emitting device according to a first embodiment of the present invention.
2 and 4 are views for explaining the structure and operation of the anode 120 shown in FIG. 1.
FIG. 3 illustrates a line-shaped ion beam emitted from the grid electrode 200 shown in FIG. 1 to the substrate 1.
5 is a cross-sectional view for explaining different structural shapes of the ion beam emitting device shown in FIG.
6 is a view showing another configuration of the ion beam emitting device shown in FIG.
7 is a view for explaining the configuration of a line-shaped ion beam emitting device according to a second embodiment of the present invention.

The configurations shown in the embodiments and drawings described in the present invention are only preferred embodiments of the present invention, and do not represent all the technical spirit of the present invention, so the scope of the present invention is the embodiments and drawings described in the text It should not be construed as limited by. That is, since the embodiments can be variously changed and have various forms, it should be understood that the scope of the present invention includes equivalents capable of realizing technical ideas. In addition, the purpose or effect presented in the present invention does not mean that a specific embodiment should include all of them or only such an effect, and the scope of the present invention should not be understood as being limited thereby.

All terms used herein have the same meaning as generally understood by a person skilled in the art to which the present invention pertains, unless otherwise defined. The terms defined in the commonly used dictionary should be interpreted to be consistent with meanings in the context of related technologies, and cannot be interpreted as having ideal or excessively formal meanings that are not explicitly defined in the present invention.

1 is a view for explaining the configuration of a line-shaped ion beam emitting device according to a first embodiment of the present invention, Figure 1 schematically shows the configuration of the main part of the line-shaped ion beam emitting device according to the present invention .

Referring to FIG. 1, the line type ion beam emitting device according to the first embodiment of the present invention is equipped with an ion beam generating unit 100 in a chamber C to ionize process gas flowing into the chamber C from the outside. It is configured to emit a line-shaped ion beam having a predetermined length. At this time, the lower side of the ion beam generator 100 may be configured to further include a grid electrode 200 for accelerating the ion beam.

A substrate 1 is disposed at an inner lower end of the chamber C, and an ion beam emitted by the anode 120 reacts with a process gas in the chamber C to deposit and etch a thin film formed on the substrate 1 Perform the process of. At this time, a gas outlet is formed on the lower side of the chamber C to control the pressure inside the chamber C. For example, the inside of the chamber C may be adjusted to a vacuum state according to a process.

The ion beam generating unit 100 includes a cathode 110 and an anode 120, and is spaced apart a certain distance below the cathode 110, and the anode 120 is disposed.

The cathode 110 uses materials such as tungsten, aluminum, carbon, graphite, and carbon nanotubes (CNT) having a low work function, and the anode 120 is formed of a material having low electrical resistance and is coated with carbon or the like. Can be.

In addition, in the present invention, the cathode power supply unit 300 for supplying power to the cathode 110 and the anode power supply unit 400 for supplying power to the anode 120 and the grid electrode 200 It is configured to include a grid power supply 500 for supplying.

In this embodiment, the cathode power supply 300 applies RF power to the cathode 110, the anode power supply 400 applies a negative voltage to the anode 120, and the grid power supply 500 The grid electrode 200 applies a high voltage at a level greater than the voltage applied to the anode 120. For example, the cathode power supply unit 300 applies RF power of 0.5 to 20 kW to the cathode 110, and the anode power supply unit 400 applies a negative voltage of 100 to 1,000 kV to the anode 120.

That is, the ion beam generator 100 is applied with a certain level of RF power to the cathode 110 in a state in which process gas is introduced into the chamber C, and when a negative voltage is applied to the anode 120, the cathode 110 ) And the anode 120, the process gas is ionized to form a plasma, and the ions on the plasma are attracted to the anode 120 by the voltage difference between the cathode 110 and the anode 120, thereby forming an anode hole in the anode 120 It is discharged to the grid electrode 200 side through (121). At this time, although not shown, a fixed magnet may be configured around the ion beam generating unit 100 to confine plasma.

In addition, an apparatus for forming an electromagnetic field to increase plasma density may be additionally provided on the cathode 110.

At this time, the cathode 110 may be implemented as a cold cathode, as shown in FIG. 1, although not shown, a plurality of gas holes are formed and process gas flows into the gas hole, thereby forming a plasma on the gas hole It can also be implemented as a hollow cathode.

Then, as a high voltage is applied to the grid electrode 200, ions emitted from the anode 120 are discharged to the substrate 1 through the grid hole 201. At this time, the line-shaped ion beam LB output from the grid electrode 200 has an output of 100W ~ 5KW.

On the other hand, the anode 120 is composed of a curved surface shape curved upward so as to have a focal position in the longitudinal direction corresponding to the center line in a plate shape, so that the inclination of the anode hole 121 moves to the center, through which the plasma The ions of the phases are concentrated in a line shape corresponding to the center line, and then emitted to the grid electrode 200 side. In addition, as the anode hole 121 goes outward, the upper diameter D2 becomes larger than the lower diameter D1, so that ions of the plasma phase can be more efficiently concentrated in the center line direction.

In addition, the anode 120 is preferably made of a material having a flexible property and a high withstand voltage in order to realize a curved shape.

FIG. 2 is a diagram illustrating different structural shapes of the anode 120 shown in FIG. 1.

2, (A) is a perspective view of the anode 120 according to the first embodiment, and (B) is a plan view of the anode 120 according to the first embodiment.

As shown in FIG. 2(A), the anode 120 includes a first metal layer 122 and a second metal layer 123 disposed under the first metal layer 122, and the first and second It is composed of a plate shape having a radius of curvature made of an insulating layer 124 disposed between the metal layers 122 and 123. At this time, the voltages applied to the first and second metal layers 122 and 123 may be set differently, and preferably, the voltage applied to the second metal layer 123 to move the ions on the plasma more quickly is the first. It is set lower than the voltage applied to the metal layer 122.

At this time, by setting the size of the anode hole 121 of the anode 120 differently as shown in FIG. 2, the electric field intensity may be set differently according to the position of the anode 120 corresponding to the size of the anode hole 121. Here, the local electric field in the anode hole 121 is formed larger than the voltage difference between the two metal layers by the bipolar electric field formed by the voltage applied between the first and second metal layers 122 and 123 of the anode 120. For example, when the voltage applied to the first metal layer 122 is 500 V, a smallest electric field corresponding to a voltage greater than this is formed in the anode hole 121. And, the smaller the diameter of the anode hole 121, the greater the intensity of the local electric field formed in the anode hole 121 becomes.

That is, as shown in FIG. 2, the diameter of the anode hole 121 formed in the vertical direction of the anode plate has the same size with respect to a line in a certain direction, but is configured to be larger as it goes from the center line to the outer line. The electric field of the anode hole 121 at the line position can be set larger.

Accordingly, it is possible to induce ions on the plasma to be more concentrated toward the focal position of the center line of the anode 120. At this time, the anode 120 may be divided into three regions of the center and both outer regions or divided into a plurality of regions, and the size of the anode hole 121 for each region may be set to increase from the central region to the outer region. have. In addition, the shape of the anode hole 121 may be made of any of various shapes, including a square.

3 is a view illustrating an ion beam LB in the form of a line emitted through the anode 120. At this time, the width of the line beam LB used in the process of the substrate 1 may be appropriately set in the range of 5 mm to 10 cm through the diameter setting of the anode hole 121.

The smaller the diameter of the anode hole 121 is, the greater the electric field strength is, but is set to a size in the range of 20 to 200 μm in consideration of ion permeability, and adjacent anode hole 121 according to the diameter of the anode hole 121 The interval between livers can also be appropriately adjusted.

The insulating layer 124 is formed to a thickness greater than the thickness of the first metal layer 122 and the second metal layer 123. In addition, the first metal layer 122 and the second metal layer 123 are 50 or 100 μm thick as a metal material such as copper or Cr, and the insulating layer is 100 as a material having high insulating properties such as polyimide or epoxy. ~ 1,000μm thickness. The anode 120 of this material has flexible characteristics.

In addition, the anode 120 separates a plurality of regions in units of a predetermined width based on the center line of the plate, as shown in FIG. 2C, and applies voltages of different levels, but goes outward toward the center line region. By setting the voltage difference with the cathode to be set larger than the line region, the intensity of the electric field formed in the center line of the anode 120 can be set to be larger than the outside. At this time, the lower the voltage level applied to the anode 120, the greater the voltage difference with the cathode 110.

That is, the first region S1 including the center line of the anode 120, the second region S2 having a predetermined width adjacent to the outside of the first region S1, and the outside of the second region S2. It is divided into a third region S3 having a predetermined width adjacent to, and a first level voltage V1 is applied to the first region S1 and a first level voltage is applied to the second region S2. It may be configured to apply a voltage V2 of a second level greater than V1, and to apply a voltage V3 of a third level greater than the voltage V2 of the second level to the third region S3.

In addition, the anode 120 is composed of three or more metal layers and two or more insulating layers, and a multilayer form in which an insulating layer is disposed between the metal layers, that is, an insulating layer and a metal layer are alternately stacked between the metal layers. It can be configured in the form. In FIG. 2D, an anode 120 composed of three metal layers M1, M2 and M3 and two insulating layers I1 and I2 is illustrated. Figure 2 (D) is illustrated in a planar shape to show its features in the cross section of the anode 120, but of course, it is made of a curved shape as shown in (A).

When the anode 120 is configured as shown in FIG. 2(D), the voltage range applied to the anode 120 is expanded as the number of metal layers and insulating layers increases, so that the anode 120 is controlled through adjustment of the voltage range. It is possible to additionally provide the function of blocking and accelerating the ion beam generated by. That is, by setting the voltage applied to the anode 120 to a positive voltage to prevent ions from flowing into the anode 120, the ion beam can be blocked. In addition, by setting the voltage applied to the anode 120 to a lower negative voltage, ions can be accelerated and introduced into the anode 120.

In addition, in the structure of FIG. 2, the anode 120 may be configured to further form a coating layer on the outer surface of the metal layer positioned at the top and the metal layer positioned at the bottom. The coating layer may be made of an insulator such as polyimide, epoxy, silicon, etc. When the processing area of the anode hole 121 is 50% or less of the total area of the top surface of the anode 120, ions are formed on the top surface of the anode 120. It is intended to minimize the occurrence of loss by being concentrated in one metal layer 122.

On the other hand, Figure 4 is a view showing the structure of the anode 120 according to the second embodiment, the anode 120 according to the second embodiment is basically made of a plate shape in the form of a mesh. In FIG. 4, the anode 120 is shown as a flat plate to show the structural characteristics of the anode 120, but in the present invention, the anode 120 is formed in a curved upward form as shown in FIG. 2(A).

As shown in FIG. 4(E), the anode 120 is formed in a mesh shape of a mesh structure, and in one direction, preferably a line forming a mesh toward the outside with respect to the center line of the plate (wire, W) It can be configured to make the density small.

In addition, as shown in FIG. 4(F), the mesh-shaped anode 120 has a uniform line density (line spacing in the horizontal and vertical directions is uniform) and the thickness of the line goes outward with respect to the center line of the plate. Can be configured to be small.

At this time, the thickness of the wire (W) in Figure 4 (E) and (F) is 0.1mm ~ 1mm, can be used aluminum, copper, iron wire, etc., and coated with carbon (carbon) to prevent corrosion, etc. It can be made of.

That is, by using the density difference of the line in the mesh structure as shown in FIG. 4 (E) or by using the thickness difference (F) of the line, the intensity of the electric field in the center line of the anode 120 is largely set, so that the ions in the anode 120 Can be centralized to a more central line and released downward.

In addition, in the present invention, it is possible to form an ion beam having a concentrated line shape in a center line by using lines of different materials having different resistance values at the anode 120 of a mesh structure having a uniform density of lines. At this time, the center line of the anode 120 uses a rigid material having a large resistance value, and the intensity of the electric field at the center line is set larger than the outside by using a material having a low resistance value such as aluminum or copper as it goes outside. You can.

In addition, in the present invention, it is also possible to implement to form an ion beam in the form of a concentrated line at the center line using a coating film of different materials having different resistance values at the anode 120 having a mesh structure having a uniform density of lines.

Here, the above-described structure using a wire of a material having a different resistance value or using a coating film of a material having a different resistance value is additionally applied to the structures of FIGS. 4(E) and (F), thereby emitting through the anode 120 It is possible to further improve the concentration efficiency of the ions.

In addition, in the present invention, as illustrated in FIG. 5, at least one of the cathode 110 and the grid electrode 200 may be formed in a curved shape with a curved upper side based on the center line of the anode 120. .

In FIG. 5, (G) is a structure in which the bottom of the cathode 110 is formed in a curved shape, (H) is a structure in which the grid electrode 200 is formed in a curved shape, and (I) is a bottom and a grid of the cathode 110. The electrode 200 is a structure made of a curved surface.

Here, the cathode 110, the anode 120, and the grid electrode 200 may have a radius of curvature in the range of 5 mm to 1000 mm, and a focal position of ions emitted through the grid electrode 220, that is, an ion beam formation position In order to shorten, the lower electrode may be configured to have a smaller radius of curvature than the upper electrode.

In addition, in the present invention, at least one electrode of the cathode 100, the anode 120, and the grid electrode 200, as shown in FIG. 6, has an actuator for setting the curvature radius of the upper side to be curved at both ends thereof. The 710 is further coupled and configured, and the actuator 710 moves in a direction perpendicular to the curved direction of the corresponding electrode (cathode, anode, grid electrode) in response to the rotation of the motor 720, thereby curving the electrode. It can be configured to vary the radius. Accordingly, the inclination angle of the hole formed in the corresponding electrode is changed.

As a result, it is possible to control the width and focal length of the ion beam emitted through the anode 120 and applied onto the substrate 1.

The configuration of FIG. 6 can be applied to both the anode 120 in the form of FIGS. 2 and 4.

In addition, in FIG. 1, the cathode 110 provided in the ion beam generator 100 has been described by exemplifying a cold cathode, but in the present invention, a plurality of cathode holes are formed on the cathode, and process gas is provided through the cathode hole. It is also possible to implement a hollow cathode that generates plasma in the cathode hole by injecting and process gas being ionized in the hole by a voltage applied to the cathode. At this time, the hollow cathode is configured to include a dielectric to which a DC voltage or a pulse voltage is applied.

When the cathode 110 of the ion beam generator 100 is made of a hollow cathode, a first negative voltage or RF power is applied to the hollow cathode, and a second negative voltage is applied to the anode. At this time, the second negative voltage is set lower than the first negative voltage. Accordingly, ions on the plasma formed in the cathode hole are attracted to the anode to which the negative voltage is applied, and are emitted downward through the anode hole. That is, the anode 120 is configured in a plate shape to have a curved surface shape curved upward to have a longitudinal focal position corresponding to a center line, so that the slope of the anode hole 121 moves to the center, and through this, the plasma The ions of the phases are concentrated in a line shape corresponding to the central line, and then emitted to the grid electrode 200 side.

In addition, as the anode hole 121 goes outward, the upper diameter D2 becomes larger than the lower diameter D1, so that ions of the plasma phase can be more efficiently concentrated in the center line direction.

Meanwhile, FIG. 7 is a diagram schematically showing the internal configuration of a line-type ion beam generator according to a second embodiment of the present invention.

Referring to FIG. 7, the line-type ion beam generator according to the second embodiment of the present invention includes an electron beam generator 900 and a grid electrode 200.

In addition, the electron beam generating unit 900 is arranged to be spaced apart a certain distance in sequence between the cathode 910 and the anode 920 to emit an electron beam having a length corresponding to the center line downward. Here, the anode 920 is disposed within a free stroke distance, and the specific configuration of the anode 920 may be configured to be the same as the structure of the anode 120 of the ion beam generator 120 described in the first embodiment. Detailed description of it will be omitted. It goes without saying that the structure mentioned in the first embodiment, including the structure of Fig. 6, can also be applied to and implemented in this embodiment.

At this time, the electron beam generating unit 900 includes a cathode power supply unit 300 for supplying power to the cathode 910, an anode power supply unit 400 for supplying power to the anode 920, and a grid electrode ( 200) is configured to include a grid power supply 500 for supplying power. Then, a first negative voltage is applied to the cathode 910, a second negative voltage less than the first negative voltage is applied to the anode, and a third negative voltage greater than the second negative voltage is applied to the grid electrode 200. .

That is, as the electron beam generator 900 receives different levels of negative voltages to the cathode 910 and the anode 920, the process gas applied from the outside between the cathode 910 and the anode 920 is ionized to gas. The ions are formed, and the ions formed in the mean free path are attracted by the negative voltage of the anode 920 and attracted by the cathode voltage to collide with the surface of the cathode 910 to generate secondary electrons. As the secondary electrons move to the anode 920 while having directionality, they are emitted downward through the plurality of anode holes 921 formed in the anode 920.

At this time, the anode 920 is configured to form an insulating layer having a predetermined thickness between the upper metal layer and the lower metal layer in a plate shape having a size corresponding to the cathode 910, while focusing in the longitudinal direction corresponding to the center line. Since the upper side is configured to have a curved surface shape so as to have a position, the secondary electrons are concentrated in a line shape corresponding to the central line and emitted to the grid electrode 200.

Then, the electrons emitted from the anode 920 between the grid electrode 200 and the anode 920 ionize process gas, whereby electrons and ions are intensively generated in a region corresponding to the center line, and the grid electrode 200 ) And the ions are drawn to the grid electrode 200 by the negative voltage difference applied to the anode 920 and emitted downward through the grid hole 201.

That is, the ions between the grid electrode 200 and the anode 920 are concentrated in the center line region of the anode 920, and the ion distribution led to the grid electrode 200 is also in the center line region of the anode 920. Correspond.

As a result, ions are concentrated in a line shape corresponding to the center line of the anode 920 at the focal position of the electron beam of the anode 920, thereby generating a line-shaped ion beam. do.

In addition, a magnetic lens may be additionally provided on the lower side of the grid electrode 200 to refocus the ions emitted from the grid electrode 200.

Although described above with reference to preferred embodiments of the present invention, those skilled in the art variously modify and change the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You can understand that you can.

100: ion beam generator, 110: cathode,
120: anode, 121: anode hole,
200: grid electrode, 201: grid hole,
300: cathode power supply, 400: anode power supply,
500: grid power supply,
1: Substrate.

Claims (13)

A cathode to which RF power is applied is provided, and an anode to which a negative voltage is applied is disposed at a position spaced apart a certain distance underneath to form plasma by ionizing process gas between the cathode and the anode, and a voltage difference between the cathode and the anode In the line-shaped ion beam emitting device for emitting ions on the plasma downward through a plurality of holes formed in the anode by,
The anode has flexible characteristics including polyimide or epoxy while having a predetermined thickness in the same plane structure as the first and second metal layers and the first and second metal layers having a plate shape having a size corresponding to the cathode. The insulating layer of the material having the material is configured to be disposed between the first and second metal layers,
The upper and lower surfaces of the first and second metal layers and the insulating layer gradually increase in size toward the outer line, and the upper and lower surfaces are arranged in a curved shape to have a focal position in the longitudinal direction corresponding to the center line. 2 By applying different voltages applied to the metal layer, the smaller the hole size is, the more the intensity of the local electric field corresponding to the voltage difference between the first and second metal layers is gradually increased. A line type ion beam emitting device characterized in that the path is configured to be concentrated to the center line of the anode .
delete delete delete delete The cathode is formed by disposing a hollow cathode in which a plurality of cathode holes are formed and an anode to which a negative voltage is applied at a position spaced apart a certain distance below it. As the process gas is injected through the cathode hole and a voltage is applied to the hollow cathode, the cathode hole In the ion beam emission device of the line form in which the plasma is formed by ionizing the process gas, the ions on the plasma are attracted to the anode to which negative voltage is applied, and concentrated and discharged downward through the anode hole formed in the anode,
The anode has flexible characteristics including polyimide or epoxy while having a predetermined thickness in the same plane structure as the first and second metal layers and the first and second metal layers having a plate shape having a size corresponding to the cathode. The insulating layer of the material having the material is configured to be disposed between the first and second metal layers,
The first and second metal layers and the holes passing through the insulating layer gradually increase in size toward the outer line, while the upper surface is arranged in a curved surface shape to have a focal position in the longitudinal direction corresponding to the center line. And the voltage applied to the second metal layer is differently applied to set the intensity of the local electric field corresponding to the voltage difference between the first and second metal layers as the hole size is smaller, thereby causing ions in the plasma to flow into and out of the hole. Line of the ion beam emitting device, characterized in that configured to be concentrated so that the path of the center line of the anode.
According to any one of claims 1 or 6,
A grid electrode is additionally arranged and configured under the anode,
At least one of the cathode and the grid electrode is a line-shaped ion beam emitting device, characterized in that formed in a curved shape of the upper side with respect to the center line of the anode.
According to any one of claims 1 or 6,
At both ends of the anode, an actuator for setting the upper portion to have a curved radius of curvature is combined and configured, and the actuator moves in a direction perpendicular to the bending direction of the corresponding device in response to the rotation of the motor, thereby curvature of the corresponding device Line type ion beam emitting device characterized in that the radius is varied.
According to any one of claims 1 or 6,
The anode separates a plurality of regions in a predetermined width unit based on the center line of the plate, and applies negative voltages of different levels to each region.
A line-type ion beam emitting device, characterized in that the voltage level is set such that the voltage difference with the cathode is gradually set larger than the outer region toward the center line region.
According to any one of claims 1 or 6,
The ion beam generating unit is installed on the inner top of the chamber to perform a process for the substrate disposed on the lower side of the chamber in response to the process gas flowing into the inside of the chamber,
A line type ion beam emitting device, characterized in that, by emitting an ion beam concentrated in a central line through an anode to a substrate, the ion beam and process gas react to perform a deposition process or an etching process on a thin film formed on the substrate.
A cathode to which the first negative voltage is applied is provided, and an anode to which a second negative voltage less than the first voltage is applied is disposed within a free stroke distance at a position spaced apart a predetermined distance below the process gas to ionize between the cathode and the anode. The electron beam emitted to the lower side through a plurality of holes formed in the anode by ions colliding with the cathode surface to generate secondary electrons by the potential difference between the cathode and the anode, and the secondary electrons move to the anode side by the voltage of the anode Generation part,
As it is disposed on the lower side of the anode in a plate shape corresponding to the size of the anode, the electrons emitted from the anode by applying a third negative voltage higher than the second negative voltage ionizes the process gas and generates ions. It comprises a grid electrode to perform a process for the thin film formed on the substrate by emitting through the holes formed on the plate,
The anode is flexible including polyimide or epoxy while having a predetermined thickness in the same plane structure as the first and second metal layers and the first and second metal layers having a plate shape having a size corresponding to the cathode. An insulating layer made of a material having one characteristic is configured in a form arranged between the first and second metal layers,
The first and second metal layers and the holes passing through the insulating layer gradually increase in size toward the outer line, while the upper surface is arranged in a curved surface shape to have a focal position in the longitudinal direction corresponding to the center line. And the secondary electrons flowing into and out of the hole by applying different voltages applied to the second metal layer to set the intensity of the local electric field corresponding to the voltage difference between the first and second metal layers as the hole size is smaller. Line of the ion beam emitting device, characterized in that configured to be concentrated so that the path of the center line of the anode.
delete The method of claim 11,
At least one of the cathode, the anode, and the grid electrode is configured by combining an actuator for setting a curved radius of curvature upward at both ends thereof, and the actuator is perpendicular to the bending direction of the corresponding device in response to rotation of the motor. A line-shaped ion beam emitting device, characterized in that by changing in a direction, the curvature radius of the device is varied.

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