KR102012388B1 - Solar cell - Google Patents
Solar cell Download PDFInfo
- Publication number
- KR102012388B1 KR102012388B1 KR1020130026845A KR20130026845A KR102012388B1 KR 102012388 B1 KR102012388 B1 KR 102012388B1 KR 1020130026845 A KR1020130026845 A KR 1020130026845A KR 20130026845 A KR20130026845 A KR 20130026845A KR 102012388 B1 KR102012388 B1 KR 102012388B1
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- South Korea
- Prior art keywords
- quantum dot
- dot layer
- electrode
- ligand
- layer
- Prior art date
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- 239000002096 quantum dot Substances 0.000 claims abstract description 120
- 239000003446 ligand Substances 0.000 claims abstract description 41
- 230000031700 light absorption Effects 0.000 claims abstract description 12
- DHBXNPKRAUYBTH-UHFFFAOYSA-N 1,1-ethanedithiol Chemical compound CC(S)S DHBXNPKRAUYBTH-UHFFFAOYSA-N 0.000 claims description 6
- JRNVQLOKVMWBFR-UHFFFAOYSA-N 1,2-benzenedithiol Chemical compound SC1=CC=CC=C1S JRNVQLOKVMWBFR-UHFFFAOYSA-N 0.000 claims description 6
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 claims description 6
- 229910018989 CoSb Inorganic materials 0.000 claims description 3
- 229910005642 SnTe Inorganic materials 0.000 claims description 3
- 229910010282 TiON Inorganic materials 0.000 claims description 3
- 229910003087 TiOx Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 239000002803 fossil fuel Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910017028 MnSi Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A solar cell according to an embodiment includes a first electrode, a second electrode spaced apart from the first electrode, and a light absorption layer positioned between the first electrode and the second electrode, wherein the light absorption layer is a first electrode. A quantum dot layer, a second quantum dot layer, and a third quantum dot layer, wherein the first quantum dot layer is in contact with the first electrode, the third quantum dot layer is in contact with the second electrode, and the second quantum dot layer is A first quantum dot layer disposed between the first quantum dot layer and the third quantum dot layer, wherein the first and third quantum dot layers each include first and third quantum dots that are not surrounded by a ligand, and the second quantum dot layer includes a second quantum dot and And a first ligand surrounding the second quantum dot.
Description
Relates to a solar cell.
The main energy sources used by humans today are fossil fuels such as coal and oil. But not only are fossil fuels depleted, they are also causing problems such as global warming and environmental pollution. As an alternative energy source to replace fossil fuels, a method of producing energy without environmental pollution using solar, tidal, wind, and geothermal energy has been proposed.
Among these, in the field of solar cell technology that converts sunlight into electricity, various materials and devices have been developed to efficiently convert sunlight into electricity. However, the efficiency of solar cells has yet to reach the desired level.
The present invention seeks to provide a solar cell having high power generation efficiency.
A solar cell according to an embodiment includes a first electrode, a second electrode spaced apart from the first electrode, and a light absorption layer positioned between the first electrode and the second electrode, wherein the light absorption layer is a first electrode. A quantum dot layer, a second quantum dot layer, and a third quantum dot layer, wherein the first quantum dot layer is in contact with the first electrode, the third quantum dot layer is in contact with the second electrode, and the second quantum dot layer is A first quantum dot layer disposed between the first quantum dot layer and the third quantum dot layer, wherein the first and third quantum dot layers each include first and third quantum dots that are not surrounded by a ligand, and the second quantum dot layer includes a second quantum dot and And a first ligand surrounding the second quantum dot.
The first ligand may have a thickness of 3 nm to 6 nm.
The size of the first and third quantum dots may be equal to the size of the second quantum dots plus about half the thickness of the first ligand.
The light absorbing layer further includes a fourth quantum dot layer positioned between the second quantum dot layer and the third quantum dot layer, wherein the fourth quantum dot layer includes a fourth ligand surrounding the fourth quantum dot and the fourth quantum dot. It may include.
The thickness of the first ligand and the second ligand may be different from each other.
The thickness of the first ligand may be 3 nm to 6 nm, and the thickness of the second ligand may be 3 nm or less.
The first to third quantum dots may include one or more of CoSb 3 , SnTe, LaSb, and CeN.
The first ligand may include one or more of MgO, TiOx, TiON, EDT (ethanedithiol), BDT (benzenedithiol), and MPA (mercaptopropionic acid).
The solar cell according to the embodiment may increase power generation efficiency.
1 is a schematic cross-sectional view of a solar cell according to one embodiment.
2 is a schematic cross-sectional view of a solar cell according to another embodiment.
3 is a graph showing the radiation spectrum of sunlight.
DETAILED DESCRIPTION Embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted for simplicity of explanation, and like reference numerals designate like elements throughout the specification.
A solar cell according to an embodiment will be described in detail with reference to FIG. 1.
1 is a schematic cross-sectional view of a solar cell according to one embodiment.
Referring to FIG. 1, the
In the present specification, the first, second, and the like investigations indicate the order of description, and even though they indicate the same components, other investigations may be used according to the description in the detailed description and claims.
The
The
The
The first and third
In such a structure, the
The thickness of the
The size of the
According to an embodiment, the sizes of the
The
A solar cell and a method of manufacturing the same according to another embodiment will be described in detail with reference to FIG. 2.
2 is a schematic cross-sectional view of a solar cell according to another embodiment.
Referring to FIG. 2, the
The
The
The
The first and fourth
The thickness of the
In such a structure, electrons generated in the second and third quantum dot layers 244 and 246 may easily move in the vertical direction.
In the above embodiment, a structure including one or two quantum dot layers has been described, but it may also include three or more quantum dot layers, in which case a layer including only quantum dots and a layer including both quantum dots and ligands are alternately disposed, Ligands may be alternately arranged in thin and thick layers.
Meanwhile, the number of quantum dot layers may be determined differently according to the wavelength of incident light, which will be described in detail with reference to FIG. 3.
3 is a graph showing the radiation spectrum of sunlight.
Referring to FIG. 3, when the band gaps (E g1 , E g2 , E g3 ) of the quantum dot layer are about 2.3 eV, light having a wavelength of about 600 nm or less is absorbed, and when about 1.4 eV, light having a wavelength of about 890 nm or less is absorbed. If it is about 0.8 eV, it can absorb the light of about 1550 nm or less. In Figure 3 E gSi represents the bandgap of silicon.
When the quantum dots are formed of MnSi, the thickness is about 3.94 nm for short wavelengths having a bandgap of about 2.3 eV, and about 8.79 nm for intermediate wavelengths having a bandgap of about 1.4 eV, and about 0.8 eV. In the case of an intermediate wavelength having a band gap of about 17.70 nm, the thickness may be about 17.70 nm.
Therefore, in the case of short wavelength having a band gap of about 2.3 eV, only one quantum dot layer is sufficient, and in the case of an intermediate wavelength having a band gap of about 1.4 eV, it is about two layers and an intermediate wavelength having a band gap of about 0.8 eV. In this case, only about four layers are sufficient.
Although the embodiments have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also included in the scope of the present invention. It belongs.
Claims (8)
A second electrode spaced apart from the first electrode, and
A light absorption layer positioned between the first electrode and the second electrode
Including;
The light absorbing layer includes a first quantum dot layer, a second quantum dot layer and a third quantum dot layer,
The first quantum dot layer is in contact with the first electrode,
The third quantum dot layer is in contact with the second electrode,
The second quantum dot layer is located between the first quantum dot layer and the third quantum dot layer,
The first and third quantum dot layer includes first and third quantum dots, each of which is not surrounded by a ligand,
The second quantum dot layer includes a second quantum dot and a first ligand surrounding the second quantum dot.
Solar cells.
The first ligand has a thickness of 3 nm to 6 nm.
And the size of the first and third quantum dots is equal to the size of the second quantum dots plus half the thickness of the first ligand.
The light absorbing layer further includes a fourth quantum dot layer positioned between the second quantum dot layer and the third quantum dot layer.
The fourth quantum dot layer includes a fourth quantum dot and a second ligand surrounding the fourth quantum dot.
Solar cells.
The solar cell of the first ligand and the second ligand is different in thickness.
The thickness of the first ligand is 3 nm to 6 nm, the thickness of the second ligand is 3 nm or less.
The first to third quantum dots are solar cells comprising one or more of CoSb 3 , SnTe, LaSb, CeN.
The first ligand is at least one of MgO, TiOx, TiON, EDT (ethanedithiol), BDT (benzenedithiol), MPA (mercaptopropionic acid).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130026845A KR102012388B1 (en) | 2013-03-13 | 2013-03-13 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130026845A KR102012388B1 (en) | 2013-03-13 | 2013-03-13 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140112654A KR20140112654A (en) | 2014-09-24 |
| KR102012388B1 true KR102012388B1 (en) | 2019-08-20 |
Family
ID=51757437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130026845A KR102012388B1 (en) | 2013-03-13 | 2013-03-13 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102012388B1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10236400B2 (en) | 2016-02-01 | 2019-03-19 | Heptagon Micro Optics Pte. Ltd. | Quantum dot film based demodulation structures |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005538573A (en) | 2002-09-05 | 2005-12-15 | ナノシス・インク． | Compositions based on nanostructures and nanocomposites |
| US20100133418A1 (en) | 2005-01-07 | 2010-06-03 | Edward Sargent | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
| US20110278541A1 (en) | 2010-05-17 | 2011-11-17 | University Of Washington Through Its Center For Commercialization | Color-selective quantum dot photodetectors |
| WO2012071107A1 (en) | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
| US20120174969A1 (en) | 2009-09-28 | 2012-07-12 | Murata Manufacturing Co., Ltd. | Method of Producing Nanograin Material, Nanograin Material, and Photoelectric Conversion Device |
| WO2012128564A2 (en) | 2011-03-22 | 2012-09-27 | Korea Research Institute Of Standards And Science | Photo active layer by silicon quantum dot and the fabrication method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010089892A1 (en) * | 2009-02-09 | 2010-08-12 | トヨタ自動車株式会社 | Solar cell |
| KR101075149B1 (en) * | 2009-12-01 | 2011-10-19 | (유)에스엔티 | Solar cell and method of the same |
| KR20120000462A (en) * | 2010-06-25 | 2012-01-02 | 엘지디스플레이 주식회사 | Thin film solar cell |
| KR101217195B1 (en) * | 2010-11-30 | 2012-12-31 | 한국기초과학지원연구원 | Method of controlling size of quantum dots |
| KR20120133700A (en) * | 2011-05-31 | 2012-12-11 | 엘지이노텍 주식회사 | Solar cell apparatus and method of fabricating the same |
| KR101485215B1 (en) * | 2011-06-13 | 2015-01-26 | 한양대학교 산학협력단 | middle band type organic solar cell by using metal oxide quantum dot and method of producing the same |
-
2013
- 2013-03-13 KR KR1020130026845A patent/KR102012388B1/en active IP Right Grant
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005538573A (en) | 2002-09-05 | 2005-12-15 | ナノシス・インク． | Compositions based on nanostructures and nanocomposites |
| US20100133418A1 (en) | 2005-01-07 | 2010-06-03 | Edward Sargent | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
| US20120174969A1 (en) | 2009-09-28 | 2012-07-12 | Murata Manufacturing Co., Ltd. | Method of Producing Nanograin Material, Nanograin Material, and Photoelectric Conversion Device |
| US20110278541A1 (en) | 2010-05-17 | 2011-11-17 | University Of Washington Through Its Center For Commercialization | Color-selective quantum dot photodetectors |
| WO2012071107A1 (en) | 2010-11-23 | 2012-05-31 | Qd Vision, Inc. | Device including semiconductor nanocrystals & method |
| WO2012128564A2 (en) | 2011-03-22 | 2012-09-27 | Korea Research Institute Of Standards And Science | Photo active layer by silicon quantum dot and the fabrication method thereof |
Non-Patent Citations (1)
| Title |
|---|
| Jiang Tang et al., "Colloidal-quantum-dot photovoltaics using atomic-ligand pasivation", Nature Mater., DOI:10.1038/NMAT3118 |
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| Publication number | Publication date |
|---|---|
| KR20140112654A (en) | 2014-09-24 |
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