KR101967790B1 - Apparatus for forming thin film - Google Patents

Abstract

A thin film forming apparatus includes a process chamber for forming a process environment, a process unit disposed in the process chamber and including a substrate supporter for supporting the substrate, and a heater unit for heating the substrate; A gas supply device for supplying a process gas into the process unit; A first substrate disposed within the process chamber and spaced apart from the substrate supporter, a portion of the heat radiated from the substrate is kept warm and a portion of the heat generated from the substrate is radiated to maintain a constant temperature of the substrate, A substrate temperature holding unit; And a second substrate temperature holding unit disposed inside the first substrate temperature holding unit and connected to the substrate supporter to confine a part of the heat generated from the substrate to maintain the temperature of the substrate constant.

Description

[0001] APPARATUS FOR FORMING THIN FILM [0002]

The present invention relates to a thin film forming apparatus, and particularly to a thin film forming apparatus capable of performing a process of forming a crystalline thin film on a substrate through a crystallization process in one process chamber or a process of forming a thin film to be deposited on a substrate through a chemical vapor deposition process And a thin film forming apparatus.

Generally, a crystal growth process is a process of growing crystals on a substrate. Since a crystal growth process is formed at a very high process temperature and a high-pneumatic environment, breakage of equipment due to a poor process environment is frequently generated, .

On the other hand, the epitaxial process using a chemical vapor deposition process is a process of forming a film by depositing a material on a substrate and then growing the material.

Since the epitaxial process using a chemical vapor deposition process is performed at a very high process temperature and a high vacuum pressure similar to the crystal growth process, equipment breakage may occur frequently.

The epitaxial process using the crystal growth process and the chemical vapor deposition process is a heterogeneous process, and conventionally, the crystal growth process and the epitaxial process have conventionally been performed in different equipment.

In addition, the conventional epitaxial growth process using the crystal growth process and the chemical vapor deposition process is performed at a temperature as high as about 2,000 DEG C at maximum, but the temperature of the substrate on which the process is performed is uniformly maintained during the process under such a high process temperature The following problems are particularly difficult and the quality of the thin film is not uniform.

In addition, the conventional crystal growth process and the epitaxial growth process are performed at a process temperature as high as about 2,000 degrees Celsius. In order to realize a high temperature process temperature, excessive voltage or current is applied to the heater and the heater is broken due to excessive thermal expansion of the heater .

The present invention provides a thin film forming apparatus which improves the efficiency of equipment utilization and reduces the production cost by integrating an epicatextic growth process using a heterogeneous crystallization process and a chemical vapor deposition process in one equipment.

The present invention relates to an epitaxial growth process using a heterogeneous crystallization process and a chemical vapor deposition process wherein a temperature of a substrate to be processed during a process time is constantly maintained at a temperature of about 1,000 ° C. to about 2,000 ° C., A thin film forming apparatus capable of improving uniformity is provided.

The present invention provides a thin film forming apparatus that prevents breakage of a heater that generates heat when a heterogeneous crystallization process and a vapor deposition process are performed at a temperature of about 1,000 ° C to about 2,000 ° C in one equipment.

In one embodiment, the thin film forming apparatus includes a process chamber including a process chamber for forming a process environment, a process unit including a heater for heating the substrate, and a substrate supporter disposed inside the process chamber for supporting the substrate; A gas supply device for supplying a process gas into the process unit; A first substrate disposed within the process chamber and spaced apart from the substrate supporter, a portion of the heat radiated from the substrate is kept warm and a portion of the heat generated from the substrate is radiated to maintain a constant temperature of the substrate, A substrate temperature holding unit; And a second substrate temperature holding unit disposed inside the first substrate temperature holding unit and connected to the substrate supporter to confine a part of the heat generated from the substrate to maintain the temperature of the substrate constant.

The first substrate temperature holding unit of the thin film forming apparatus includes a first wall disposed adjacent to the process chamber, a second wall disposed inside the first wall, and a molybdenum wall formed on an outer surface of the second wall .

The second substrate temperature holding unit of the thin film forming apparatus includes a molybdenum barrel formed in three layers.

The thin film forming apparatus includes a heat shielding member interposed between the heater unit and the substrate supporter and including a molybdenum sheet for shielding heat generated in the heater unit.

The process unit of the thin film forming apparatus includes a gate unit that opens or closes an opening in the first substrate temperature holding unit, and the gate unit includes a gate having a plate shape and having a molybdenum sheet disposed thereon, .

The heater unit of the thin film forming apparatus may include a heater body electrically connected to the electrodes, spaced apart from each other, a heat blocking plate disposed below the heater body, an insulating member disposed below the heat blocking plate, And a water container disposed below the heat shield plate. The heater body has a length longer than a width and is formed in a zigzag shape along the longitudinal direction to prevent mutual contact due to thermal expansion.

The gas providing apparatus of the thin film forming apparatus may be provided with the process chamber for forming a graphene thin film on the substrate by crystallizing the residual carbon after the silicon (Si) contained in the silicon carbide (SiC) film formed on the substrate is sublimated And a second gas supply unit for supplying a silane (SiH4) gas and a methane (CH4) gas to the process chamber for depositing a silicon carbide (SiC) thin film on the substrate .

The first gas providing unit of the thin film forming apparatus includes a cleaning gas provided to the process chamber for cleaning the substrate.

In one embodiment, a method of forming a thin film comprises: setting a first processing environment in a process chamber; loading a substrate into the process chamber; Advancing a first process to the substrate loaded within the process chamber; Unloading the substrate from the process chamber; Setting a second process environment in the process chamber; Loading a new substrate into the process chamber; And advancing a second process on the new substrate.

In the first step, argon gas, which is a sublimated gas, is supplied from the first gas providing unit to a silicon carbide (SiC) film formed on the substrate to sublimate silicon and crystallize residual carbon to form graphene (SiH4) gas and methane (CH4) gas are chemically reacted in the process chamber from the second gas supply unit to deposit a silicon carbide material on the new substrate And a silicon carbide thin film is formed on the new substrate.

The apparatus and method for forming a thin film according to the present invention can perform different processes in a single apparatus and can maintain the temperature of the substrate constant during the process when the different processes are performed in one apparatus, It is possible to improve the quality and to prevent the breakage of the heater which generates heat when the different processes are performed in one equipment, thereby preventing the process failure and reducing the maintenance cost.

1 is a block diagram showing a thin film forming apparatus according to an embodiment of the present invention.
Fig. 2 is a sectional view showing the process unit shown in Fig. 1. Fig.
3 is a cross-sectional view illustrating a heater unit according to an embodiment of the present invention.
4 is a plan view of the heater body shown in Fig.
5 is an enlarged view showing an enlarged view of a portion 'A' in FIG.
FIG. 6 is an enlarged view of the portion 'B' of FIG. 2 in an enlarged scale.
7 is a flowchart showing a method of performing different first and second processes using the thin film forming apparatus shown in FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The invention, which is set forth below, may be embodied with various changes and may have various embodiments, and specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail.

It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Also, the terms first, second, etc. may be used to distinguish between various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

1 is a block diagram showing a thin film forming apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a thin film forming apparatus 600 includes a gas providing apparatus 100, a load lock unit 200, a process unit 300, and a pressure regulating unit 400.

The thin film forming apparatus 600 according to an embodiment of the present invention is characterized in that two different processes can be performed in one process unit 300.

The thin film forming apparatus 600 may be, for example, a silicon carbide epitaxial growth process which is one of the epitaxial growth processes using a graphene epitaxial growth process or a chemical vapor deposition process, which is one of crystal growth processes in one process unit 300, The texel growth process can be continuously performed.

The graphene epitaxial growth process is defined as a process of forming graphene on a substrate using silicon carbide (SiC) previously formed on the substrate by a preceding process.

The graphene epitaxial growth process selectively sublimates silicon (Si) contained in silicon carbide by providing sublimation gas to the substrate in a high temperature and high vacuum environment at about 1,000 ° C. to about 2,000 ° C., And the remaining carbon is grown on the substrate to form graphene on the substrate.

In order to sublimate the silicon contained in the silicon carbide formed in advance in the graphene epitaxial growth process and sublimate the silicon sublimation rate precisely, argon (Ar) gas can be used as the sublimation gas in particular, Hydrogen (H2) gas is used.

The silicon carbide epitaxial growth process using a chemical vapor deposition process vapor-phase chemically reacts silane (SiH4) and methane (CH4) in an ultra-high temperature environment of about 1,000 ° C. to about 2,000 ° C. to deposit silicon carbide (SiC) And then crystal-growing the deposited silicon carbide.

The silicon carbide epitaxial growth process using the chemical vapor deposition process has the advantage of forming an ultra-high purity silicon carbide thin film on the substrate.

In the silicon carbide epitaxial growth process using a chemical vapor deposition process, propane (C3H8) can be used instead of methane (CH4) as a source gas.

In one embodiment of the present invention, in order to perform the chemical vapor deposition silicon carbide epitaxial growth process and the graphene epitaxial growth process each of the thin film forming apparatuses 600, the gas providing apparatus 100 includes a first gas providing unit (130) and a second gas supply unit (160).

The first gas providing unit 130 supplies the process gas necessary for the graphene epitaxial growth process to the process unit 300 to be described later.

The first gas providing unit 130 may include an argon gas providing unit 132 and a hydrogen gas providing unit 134.

The argon gas providing unit 132 provides the argon (Ar) gas to the process unit 300, for example, a sublimation gas necessary for controlling the sublimation and sublimation rates of silicon contained in silicon carbide formed on the substrate.

Although an argon gas is described as a sublimation gas in the embodiment of the present invention, sublimation gas other than argon may be used as a sublimation gas for sublimation of silicon.

The hydrogen gas supply unit 134 supplies hydrogen gas, which is a cleaning gas, to the process unit 300 to clean the substrate and the surface of the substrate together with the argon gas as the sublimation gas.

The gases provided from the first gas providing unit 130 are supplied to the process unit 300 through the pipe 135 and the main pipe 140. [ A purge gas, which is an inert gas for purging the inside of the pipe 135, may be separately provided to the pipe 135.

The second gas providing unit 160 provides the process gas necessary for the silicon carbide epitaxial growth process using the chemical vapor deposition process to the process unit 300 to be described later.

The second gas providing unit 160 includes a first source gas providing unit 162 and a second source gas providing unit 164.

The first source gas providing unit 162 provides silane (SiH4) gas to the process unit 300 to form silicon carbide (SiC) on the substrate on which silicon carbide is not formed.

The second source gas providing unit 164 provides methane (CH4) gas to the process unit 300, which reacts with silane (SiH4) gas to form silicon carbide on the substrate.

Alternatively, the second source gas supply unit 164 may provide propane gas instead of methane gas.

The silane gas and the methane gas provided to the interior of the process unit 300 react inside the process unit 300, and the silicon carbide (SiC) material generated thereby is deposited on the substrate. The deposited silicon carbide material is crystal-grown in the process unit 300, and a crystallized silicon carbide thin film is formed on the substrate.

Source gases provided from the second gas providing unit 160 are provided to the process unit 300 through the piping 165 and the main piping 140. A purge gas, which is an inert gas for purging the inside of the pipe 165, may be separately provided in the pipe 165.

On the other hand, a load lock unit 200 for loading or unloading the substrate into the process unit 300 is connected to the process unit 300.

The process unit 300 is connected to a pressure regulating unit 400 for providing or regulating the process pressure inside the process unit 300.

In an embodiment of the present invention, the pressure regulating unit 400 may include a vacuum pump for generating a vacuum pressure lower than atmospheric pressure inside the process unit 300 and a control valve for controlling the level of the vacuum pressure.

The pressure regulating unit 400 is also connected to the load lock chamber 210 in which the load lock unit 200 connected to the process unit 300 is connected to the process unit 300 so that the pressure in the load lock chamber is also set to a predetermined pressure .

The process unit 300 provides a process environment suitable for forming graphene on a substrate using silicon carbide formed on the substrate provided in the load lock unit 200 or for forming a silicon carbide thin film on a substrate through a chemical vapor deposition process do.

Fig. 2 is a sectional view showing the process unit shown in Fig. 1. Fig.

2, in an embodiment of the present invention, the process unit 300 includes a process chamber 310, a gas nozzle unit 315, a substrate supporter 320, a heater unit 330, Unit 340 and a second substrate temperature holding unit 360. [ In addition, the process unit 300 may further include a transfer unit 339 for transferring the substrate supporter 320.

The process chamber 310 provides a process environment in which the substrate supported on the substrate supporter 320 can undergo two heterogeneous processes.

The process chamber 310 may be made of a metal material having excellent impact resistance and corrosion resistance, for example. The process chamber 310 may be made of, for example, stainless steel.

A substrate supporter 320, a heater unit 330, a first substrate temperature holding unit 340, and a second substrate temperature holding unit 360 are disposed in the process chamber 310. In addition, the gas supply apparatus 100, the load lock unit 200, and the pressure regulating unit 400 are connected to the process chamber 310, respectively.

The gas nozzle unit 315 communicates with the process chamber 410, and the gas nozzle unit 315 is connected to the gas providing apparatus 100 described with reference to FIG. The gas nozzle unit 315 supplies the gas provided from the gas providing apparatus 100 to the substrate disposed inside the process chamber 310. [

The gas nozzle unit 315 may include a gas nozzle 312 and the gas nozzle 312 injects the gas provided in the gas providing apparatus 100 into the process chamber 410. In addition, the gas nozzle unit 315 may further include a gas distributor 314 so that the gas ejected from the gas nozzle 312 can be uniformly provided to the substrate.

A gas distributor 314 is coupled to the gas nozzle 312 and includes a distribution plate 313 formed with a plurality of holes to uniformly discharge the gas ejected from the gas nozzle 312.

In one embodiment of the present invention, the gas distributor 314 may be secured to the gas nozzle 312. Alternatively, the gas distributor 314 may be manufactured to be movable up and down along the gas nozzle 312 within the process chamber 310, so that the gap between the gas distributor 314 and the substrate is formed The properties of the thin film and the process environment.

The substrate supporter 320 disposed inside the process chamber 310 serves to support the substrate provided from the load lock unit 200 inside the process chamber 310.

A part of the substrate supporter 320 may be disposed inside the process chamber 310 and the rest of the substrate supporter 320 may be disposed outside the process chamber 310. In an embodiment of the present invention, even if a part of the substrate supporter 320 is disposed outside the process chamber 310, the process chamber 310 must be kept airtight.

A transfer unit 339 is connected to the lower end of the substrate supporter 320. The transfer unit 339 moves the substrate supporter 320 in a direction approaching the gas nozzle unit 315 or in a direction moving away from the gas nozzle unit 315.

In one embodiment of the present invention, the flow rate of the gas per unit time and the flow of the gas reaching the substrate are precisely controlled by driving the transfer unit 339.

The heater unit 330 is disposed at the top of the substrate supporter 320. The heater unit 330 heats the substrate disposed on the substrate supporter 320 so that the substrate can be processed at a temperature of about 1,000 ° C to about 2,000 ° C.

Generally, a resistive heater including a resistor connected between two electrodes to which power is applied is used to heat a substrate to be subjected to a thin film forming process at an ultra-high temperature.

However, when the substrate is heated to about 1,000 ° C. to about 2,000 ° C. by using a general resistance heater, the resistor of the resistance heater thermally expands and is short-circuited. As a result, the resistor may be damaged, thereby causing a serious problem in the thin film forming process.

3 is a cross-sectional view illustrating a heater unit according to an embodiment of the present invention.

3, the heater unit 330 disposed on the substrate supporter 320 includes a copper bar 331, a connection rod 332, an electrode 333, a heater body 334, a heat shield plate 335, An insulating member 336, and a water bottle 337.

The copper bars 331 serve as a pair of spaced apart copper bars 331 for supplying power to the heater body 334. The copper bar 331 passes through the inside of the substrate supporter 320 and protrudes to the upper portion of the substrate supporter 320.

The connection rod 332 is connected to the end of each copper bar 331, and each connection rod 332 can be disposed horizontally on the copper bar 331.

The electrode 333 is coupled to the end of each connection rod 332. The heater body 334 is coupled to the pair of electrodes 333 and the heater body 334 is connected to the heater body 334 through each copper bar 331 Heat is generated by the power source.

The electrode 333 may be made of, for example, molybdenum material resistant to heat, and the electrode 333 may be provided with cooling water for preventing the electrode 333 from overheating.

A heat shielding plate 335 is disposed under the heater body 334 to prevent the heat generated from the heater body 334 from being transmitted to the lower portion of the heater body 334 to damage the copper bar 331, .

The heat shielding plate 335 may include at least one of a tungsten plate and a molybdenum plate and the heat shielding plate 335 may be formed such that heat generated from the heater body 334 is transmitted to the lower portion of the heater body 334 And also improves the uniformity of the substrate heated by the heat generated from the heater body 334 by the effect of the heat generated from the heater body 334. [ The heat shield plate 335 may be coupled to the electrode 333 and fixed at a designated position.

The insulating member 336 may be disposed below the heat shield plate 335. [

The heat blocking plate 335 is provided with a heat blocking plate 335 to prevent the copper bar 331 or the substrate supporter 320 from being damaged by the heat transmitted to the lower portion of the heat blocking plate 335 through the heat blocking plate 335, A water tank 337 is disposed in a lower portion of the water tank 337, and cooling water is provided in the water tank 337. The water tank 337 can be made of stainless steel.

The temperature of the substrate can be kept constant when the ultra-high temperature process is performed on the substrate by arranging the heat blocking plate 335 and the water bottle 337 in the heater unit 330, The copper bar 320, the copper bar 331, and the like can be prevented from being damaged.

4 is a plan view of the heater body shown in Fig.

4, a heater body 334, which is a resistor disposed on the substrate supporter 320 at a temperature of about 1,000 ° C. to about 2,000 ° C. for heating the substrate, When provided in the process chamber 310, the heater body 334 is made of a material that is not damaged or damaged by the hydrogen gas.

The heater body 334, which is a resistor, is made of a high-purity graphite material so as not to be affected by, for example, hydrogen gas.

One end and the other end of the heater body 334, which is a resistor, are electrically connected to the pair of electrodes 333.

The heater body 334 has an appearance similar to a substrate having a disk shape, for example.

In an embodiment of the present invention, the heater body 334 has a strip shape that is longer than the width in order to prevent the heater body 334 from being heated and arcing, and the heater body 334 has a zigzag shape And is formed into a bent shape.

The overall shape of the heater body 334 having a shape bent in a zigzag shape has a shape similar to that of the substrate.

By forming the heater body 334 in a zigzag-like band shape, the heater body 334 has a larger thermal expansion in the longitudinal direction than the thermal expansion in the width direction defined in Fig. 4, and as a result, the heater body 334 has a width It is possible to prevent the heater body 334 from being damaged.

In an embodiment of the present invention, the spacing of the spaces of the heater body 334 is at least 10 mm or more to prevent breakage due to thermal expansion of the heater body 334.

When the substrate placed on the substrate supporter 320 is heated to a temperature of about 1,000 ° C. to about 2,000 ° C. by using the heat generated by the heater unit 330, the substrate supporter 320 ) May be damaged by an ultra-high temperature.

Referring again to FIG. 2, a substrate disposed in the substrate supporter 320 and heated by the heater unit 330 for advancing two heterogeneous processes in the interior of the process chamber 310 is heated to a uniform temperature Should be maintained.

However, it is generally difficult to keep the temperature of the substrate placed on the substrate supporter 320 constant for a certain period of time because the material, size of the process chamber 310, heat transfer rate of the process chamber 310, to be.

In order to prevent heat loss by the process chamber 310, when a low heat transfer material such as a flame-retardant insulating material is disposed on the inner wall of the process chamber 310, the heat insulating material may be damaged by the high temperature or may be disposed on the substrate supporter 320 The temperature of the substrate may be rapidly increased and the temperature uniformity of the substrate may be lowered.

In order to maintain the temperature of the substrate placed inside the process chamber 310 constant for a predetermined time, a method of precisely controlling the power supplied to the heater unit 330 corresponding to the temperature of the substrate may be used, It is not easy to precisely control the heat generated in the unit 330. Especially when the substrate is heated to a high temperature of about 1,000 ° C to about 2,000 ° C, it is not easy to precisely control the heat generated in the heater unit 330 .

In an embodiment of the present invention, a portion of the heat generated from the heater unit 330, which is heated by the substrate, is kept in the heater chamber 330 to keep the temperature of the substrate disposed inside the process chamber 310 constant during the required process time, A part of the heat generated from the unit 330 is supplied to the process chamber 310 to dissipate heat to maintain a constant temperature of the substrate by adjusting the thermal balance.

To implement this, the process chamber 310 includes a first substrate temperature holding unit 340 and a second substrate temperature holding unit 360.

5 is an enlarged view of a portion 'A' in FIG.

Referring to FIGS. 2 and 5, in one embodiment of the present invention, the first substrate temperature holding unit 340 is configured to uniformly supply the gas jetted from the gas nozzle unit 315 described above to the substrate, So that a thin film can be formed.

In addition, the first substrate temperature holding unit 340 is configured to maintain the temperature of the substrate heated to a temperature of about 1,000 ° C to about 2,000 ° C by the heater unit 330 constant during the process time, And transfers a portion of the heat of the substrate to the process chamber 310.

The first substrate temperature holding unit 340 is connected to the gas nozzle unit 315 and the load lock unit 200 that introduce gas from the gas providing device 100 to the process chamber 310. In this embodiment, The process chamber 310 may be formed in a shape that surrounds the process chamber 310.

The first substrate temperature holding unit 340 includes a first wall 342, a second wall 344, and a molybdenum wall 346.

The first wall 342 is disposed facing the inner surface of the process chamber 310 and the first wall 342 is spaced a predetermined distance from the inner surface of the process chamber 310. In one embodiment of the present invention, Position.

In one embodiment of the present invention, the first wall 342 may be made of a metal material, for example, stainless steel.

The second wall 344 is disposed inside the first wall 342 and the second wall 344 is formed in a shape surrounding the first wall 342. The second wall 344 may be disposed at a position spaced apart from the first wall 342.

In an embodiment of the present invention, the second wall 344 may be made of a metal material, and the second wall 344 is disposed spaced apart from the first wall 344. [ The second wall 344 may be made of, for example, stainless steel.

The molybdenum wall 346 is disposed on one side of the second wall 344 and the molybdenum wall 346 confines the heat generated from the substrate to improve warmth.

The first wall 342 and the second wall 344 serve to transfer a portion of the heat generated from the substrate to the process chamber 310 and the molybdenum wall 346 is generated from the substrate Trapping the heated heat and allowing the substrate to be sufficiently heated to the specified temperature.

In one embodiment of the present invention, the molybdenum wall 346 is disposed outside the second wall 344, thereby forming the second wall 344 by the argon gas, which is sublimed in ultra-low pressure and ultra-high temperature environments inside the process chamber 310. [ Can be prevented from being sublimated and damaged.

An opening 309 is formed at a portion connected to the load lock unit 200 by the first substrate temperature holding unit 340 so that the substrate can be loaded or unloaded from the load lock unit 200, A part of the gas introduced through the gas nozzle 315 by the opening 309 can be nonuniformly provided to the substrate by the opening 309. [

For example, the thickness of the thin film formed at the portion of the substrate adjacent to the opening 309 by the opening 309 and the thickness of the thin film formed at the portion opposite to the opening 309 in the substrate may be different from each other.

A gate unit 350 that opens or closes the opening 309 is disposed at a portion of the first substrate temperature holding unit 340 corresponding to the opening 309 in order to solve the thickness unevenness of the thin film.

The gate unit 350 includes a gate 352, a molybdenum sheet 354, and a drive unit 356.

The gate 352 is formed at a position corresponding to the opening 309 communicating with the load lock unit 200 of the process chamber 310 and the gate 352 is formed in a size larger than the size of the opening 309. Gate 352 opens or closes opening 309.

The molybdenum sheet 354 is disposed on the inner surface of the gate 352 to prevent the temperature of the portion corresponding to the gate 352 from being deviated from the temperature of the other portion. The molybdenum sheet 354 performs a heat shield function, a heat leakage prevention function, and a sublimation prevention function.

In one embodiment of the present invention, the gate 352 and the molybdenum sheet 354 allow the gas provided from the gas nozzle unit 315 to be stably provided to the substrate.

The driving unit 356 is connected to the gate 352 to drive the gate 352 inside the process chamber 310 so that the gate 352 can open or close the opening 309.

6 is an enlarged view of a portion 'B' shown in FIG.

Referring to Figs. 2 and 6, the process unit 310 includes a second substrate temperature holding unit 360. Fig.

The second substrate temperature holding unit 360 is coupled to the substrate supporter 320, for example. The second substrate temperature holding unit 360 maintains a part of the heat dissipated from the substrate and transfers a portion of the heat dissipated from the substrate to the first substrate temperature holding unit 340 so that the substrate is easily heated to the designated temperature, Allowing the temperature to be maintained for a certain period of time.

In addition, the second substrate temperature holding unit 360 serves to stabilize the flow of the gas supplied to the substrate, thereby improving the thickness uniformity of the thin film formed on the substrate.

In one embodiment of the present invention, the second substrate temperature holding unit 360 includes, for example, a three-fold molybdenum barrel, and a three-layer molybdenum barrel May be mutually contacted or spaced apart from each other by a predetermined distance.

Although in the embodiment of the present invention, the second substrate temperature holding unit 360 is shown as being three-ply, the second substrate temperature holding unit 360 may be formed in four layers.

7 is a flowchart showing a method of performing different first and second processes using the thin film forming apparatus shown in FIG.

Referring to FIGS. 2 and 7, in order to perform the first process, for example, the graphene epitaxial growth process, a first process environment is first set inside the process unit 300. [ (Step S10)

For example, the temperature of the substrate placed inside the process chamber 310 of the process unit 300 by activating the heater unit 330 disposed in the substrate supporter 320 disposed inside the process unit 300 is And is adjusted to be between 1,000 ° C and 2,000 ° C.

At the same time, the pressure regulating unit 400 connected to the process unit 300 is driven to regulate the pressure inside the process chamber 310 of the process unit 300 to a predetermined process pressure.

Subsequently, the substrate on which the silicon carbide thin film has already been formed is unloaded from the load lock unit 200, and the substrate on which the silicon carbide is formed is loaded into the process chamber 310 of the process unit 300 (step S20)

When the substrate is fixed to the upper portion of the substrate supporter 320, the first process is performed. (Step S30)

Specifically, argon gas is supplied from the argon gas providing unit 132 of the first gas providing unit 130 of the gas providing apparatus 100 to the inside of the process chamber 310, and argon gas is introduced into the silicon carbide Silicon (Si) contained in the silicon is sublimated and silicon is removed as a substrate, leaving only a high purity carbon in the substrate.

The hydrogen gas is supplied from the hydrogen gas providing unit 134 to the process chamber 310 when the argon gas is supplied to the process chamber 310 by the argon gas providing unit 132 and the surface of the substrate is cleaned using the hydrogen gas have.

After the high purity carbon is formed on the substrate disposed inside the process chamber 310 to a thin thickness, the carbon is crystal-grown to form a single-layer graphene on the substrate. The substrate containing the single-layer graphene formed from silicon carbide is unloaded from the process chamber 310 by the load lock unit.

Then, a second process environment for performing a new second process is set in the process chamber 310 of the process unit 300 (step S40)

The second process environment may include process temperatures and process pressures within process chamber 310.

Thereafter, a new substrate from which the silicon carbide is to be formed is placed on the substrate supporter 330 disposed inside the process chamber 310 from the load lock unit 200.

Silicon carbide, which is a solid material produced after the gas phase chemical reaction in the process chamber 310 is provided with silane gas and methane gas from the second gas providing unit 160 of the gas providing apparatus 100, And a silicon carbide thin film is formed on the substrate. (Step S60)

As described above in detail, two different processes can be performed in one apparatus. When two different processes are performed in one apparatus, the substrate is maintained at a constant temperature for a predetermined time, And it is possible to prevent breakage of the heater which forms the processing temperature of ultra-high temperature of about 2,000 DEG C at about 1,000 DEG C, and so on.

In the embodiment of the present invention, one heater unit is disposed inside the process chamber. Alternatively, two heater units may be disposed on the bottom of the substrate and two on the top of the substrate, respectively. Wherein the gas providing unit may be disposed between the two heater units to provide gas to the substrate.

It should be noted that the embodiments disclosed in the drawings are merely examples of specific examples for the purpose of understanding, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

Claims (10)

A process unit including a process chamber for forming a process environment, a substrate supporter disposed within the process chamber, and a heater unit for heating a substrate disposed on the substrate supporter;
A gas supply device for supplying a process gas into the process unit;
A first substrate disposed within the process chamber and spaced apart from the substrate supporter, a portion of the heat radiated from the substrate is kept warm and a portion of the heat generated from the substrate is radiated to maintain a constant temperature of the substrate, A substrate temperature holding unit; And
A part of the heat which is disposed inside the first substrate temperature holding unit and is coupled to the upper surface of the substrate supporter so as to heat the substrate from the heated substrate and that is partially radiated from the substrate is transferred to the first substrate temperature holding unit And a second substrate temperature holding unit for keeping the temperature of the substrate constant,
Wherein the heater unit includes an electrode and a heater body coupled to the electrode,
Wherein the second substrate temperature holding unit includes a triple-layer molybdenum tube, and the second substrate temperature holding unit disposed inside the second substrate temperature holding unit measures from the upper surface of the substrate supporter to the upper surface of the heater body Wherein the second substrate temperature holding unit is formed at a first height higher than the first height and the remaining second substrate temperature holding unit is disposed at a second height lower than the first height, Maintaining the temperature of the substrate constant,
Wherein the second substrate temperature maintaining unit stabilizes the flow of the process gas provided to the substrate to improve the uniformity of the thickness of the thin film formed on the substrate. The method according to claim 1,
Wherein the first substrate temperature holding unit comprises a first wall disposed adjacent to the process chamber, a second wall disposed within the first wall, and a molybdenum wall formed on an outer surface of the second wall. delete delete The method according to claim 1,
Wherein the process unit includes a gate unit for opening or closing an opening in the first substrate temperature holding unit,
Wherein the gate unit includes a gate having a plate shape and having a molybdenum sheet facing the second substrate temperature holding unit, and a drive unit for transferring the gate. The method according to claim 1,
Wherein the heater body has a length longer than a width and is formed in a zigzag shape along the longitudinal direction to prevent mutual contact due to thermal expansion. The method according to claim 1,
The gas providing apparatus may further comprise a sublimation gas supplied to the process chamber to crystallize the residual carbon after the silicon (Si) contained in the silicon carbide (SiC) film formed on the substrate is sublimated and form a graphene thin film on the substrate And a second gas supply unit for providing a silane (SiH4) gas and a methane (CH4) gas to the process chamber for depositing a silicon carbide (SiC) thin film on the substrate. 8. The method of claim 7,
Wherein the first gas providing unit comprises a cleaning gas provided to the process chamber for cleaning the substrate. delete delete

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