KR101958053B1 - Nano channel structure and method of manufacturing the same - Google Patents

Nano channel structure and method of manufacturing the same Download PDF

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Publication number
KR101958053B1
KR101958053B1 KR1020150080527A KR20150080527A KR101958053B1 KR 101958053 B1 KR101958053 B1 KR 101958053B1 KR 1020150080527 A KR1020150080527 A KR 1020150080527A KR 20150080527 A KR20150080527 A KR 20150080527A KR 101958053 B1 KR101958053 B1 KR 101958053B1
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South Korea
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spacers
substrate
channel
thin film
nano
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KR1020150080527A
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Korean (ko)
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KR20160144140A (en
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한창수
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고려대학교 산학협력단
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Priority to KR1020150080527A priority Critical patent/KR101958053B1/en
Priority to PCT/KR2016/006002 priority patent/WO2016200118A1/en
Publication of KR20160144140A publication Critical patent/KR20160144140A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/001—Devices without movable or flexible elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B1/005—Constitution or structural means for improving the physical properties of a device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0019—Forming specific nanostructures without movable or flexible elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The nano-channel structure is formed on a first substrate, a first substrate provided with nano-film spacers and two-dimensional material spacers formed on one surface of the first substrate, and the nano-film spacers, And a second substrate defining a channel with the first substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to a nanochannel structure for a filter that selectively transmits an atom or an ion, and a method of manufacturing the same. [0002]

The present invention relates to a nanochannel structure for a filter that selectively transmits an atom or an ion and a method of manufacturing the same. More particularly, the present invention relates to a nanochannel structure for filtering a part of a fluid such as a gas or a liquid, And to a method of manufacturing the nanostructure.

Generally, compared to existing micro-sized channels, nano-channel structures formed with nanoscale channels can pass only one charge of sine, which can control the flow of ions or obtain high flow generation. This is known to be due to the overlapping of electrical double layers.

Furthermore, when the surface of the nanochannel is made of a hydrophobic material such as carbon nanotubes and has a very smooth surface, relatively fast flow is possible, so that the nanochannel structure has a very high permeability Lt; / RTI >

Theoretically, there is a possibility that the flow may be abnormally accelerated or slowed due to the physicochemical dynamics between such nanoscale materials and specific molecules or ions. On the other hand, even though the size of the ion is smaller than the size of the nanochannel, it may be applied as a seawater desalination membrane which allows only water to pass therethrough without allowing only Na + and Cl- ions to pass through the seawater.

Furthermore, if a channel of about 0.3 to 1.0 nm can be fabricated and the size thereof can be adjusted, it is possible to separate atoms according to the sizes of various atoms, which can be utilized in various fields.

It is an object of the present invention to provide a nanochannel filter for selectively transmitting atoms or ions so that a part of a material can be selectively separated according to the size of various materials including various atoms, Thereby providing a structure.

Another object of the present invention is to provide a method of manufacturing the nanostructure.

The nanochannel structure according to embodiments of the present invention may include a first substrate, nano thin film spacers formed on one surface of the first substrate and spaced apart from each other and made of two-dimensional material, and a first substrate on which the nano thin film spacers are provided And a second substrate defining the channel with the nanostructured spacers and the first substrate.

The nanochannel structure according to an embodiment of the present invention may further include a clamping unit for clamping the ends of the first and second substrates.

In one embodiment of the present invention, the nano-thin film spacers graphene, graphene oxide, the reduced graphene oxide, borophene, silicene, stanene, phosphorene, graphane, germanane, transition Metal Di-chacogenides (TMSCs) - WSe 2 , WS, MoSex, MoTe x , MoS x , h-BN, or transition metal carbides.

In one embodiment of the present invention, the nanotilm spacers may comprise vertically stacked graphene monolayers and graphene oxide monolayers.

In one embodiment of the present invention, each of the nanofilm spacers may include an amine group or a hydroxyl group.

In the method of fabricating a nanochannel structure according to embodiments of the present invention, nano thin film spacers spaced from each other on one surface of a first substrate and formed of a two-dimensional material are formed. Then, the first substrate having the nano thin film spacers is covered with the second substrate, so that a channel is defined together with the nano thin film spacers and the first substrate.

In one embodiment of the present invention, in order to cover the first substrate with the second substrate, an anodic bonding process may be performed on the first and second substrates.

In one embodiment of the present invention, before defining the channel, each of the nanofilm spacers may be further subjected to a surface treatment process using plasma, ultraviolet, or self-assembled monolayer.

The nano channel structure according to embodiments of the present invention includes nano thin film spacers made of a single layer material so that the thickness and spacing of the nano thin film spacers can be easily controlled to form a channel of 1 nm or less. This allows some of the atoms to be selectively transmitted depending on the size of the various atoms. In addition, the flow rate of the fluid flowing through the channel can be improved or the selective permeation of the specific ions included in the fluid can be easily controlled.

1 is a cross-sectional view illustrating a nano-channel structure according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a nano-channel structure according to an embodiment of the present invention.
3 is a cross-sectional view illustrating another example of each of the nanofilm spacers of FIG.
4 is a flowchart illustrating a method of fabricating a nanochannel structure according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. In the accompanying drawings, the sizes and the quantities of objects are shown enlarged or reduced from the actual size for the sake of clarity of the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprise", "comprising", and the like are intended to specify that there is a feature, step, function, element, or combination of features disclosed in the specification, Quot; or " an " or < / RTI > combinations thereof.

Here, the interlayer distance corresponds to the channel and is defined as an interval therebetween that does not include the thickness of the single layer. However, for layered materials of atomic thicknesses that are difficult to accurately measure, the thickness of some single layers may be included in the interlayer spacing.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Nano channel structure

1 is a cross-sectional view illustrating a nano-channel structure according to an embodiment of the present invention.

Referring to FIG. 1, a nano channel structure 100 according to an embodiment of the present invention includes a first substrate 110, nano thin film spacers 120, and a second substrate 130.

The first substrate 110 has a flat upper surface. The first substrate 110 may have a roughness that is smaller than the thickness of the nano thin film spacers 120. As a result, the channel 125 using the nanofilm spacers 120 formed on the first substrate 110 having the flat upper surface can have a uniform size.

Meanwhile, the first substrate 110 may be made of silicon or silicon oxide. Further, the material forming the first substrate 110 is not limited thereto.

The nano thin film spacers 120 are formed on one surface of the first substrate 110. That is, the nano thin film spacers 120 are formed on the upper surface of the first substrate 110. The nano thin film spacers 120 are spaced apart from each other.

Each of the nano thin film spacers 120 is formed of a two-dimensional material. For example, each of the nano-thin film spacer 120 is graphene, graphene oxide, the reduced graphene oxide, Borophene, Silicene, Stanene, Phosphorene, Graphane, Germanane, Transition Metal Di-chacogenides (TMSCs) - WSe 2, WS, MoSex, MoTe x , MoS x , h-BN or Transitionmetalcarbides.

Further, the nanotilm spacers 120 may comprise a two-dimensional metal or semiconductor thin film. In addition, the material forming the nanofiber spacers 120 is not limited thereto.

Accordingly, as each of the nanofiber spacers 120 is formed of a two-dimensional material, the thickness of each of the nanofiber spacers 120 may be in a range of 1 nm or less.

When each of the nano thin film spacers 120 is formed of a single two dimensional material, each of the nano thin film spacers 120 may have a thickness corresponding to one to three or less atoms.

The second substrate 130 is formed on the first substrate 110 having the nano thin film spacers 120. As a result, the channel 125 can be defined by the sidewalls of the adjacent nano thin film spacers 120, the upper surface of the first substrate 110, and the lower surface of the second substrate 130. In addition, the thickness of each of the nanofilm spacers 120 may define the thickness of the channel 125. The spacing distance between the nano thin film spacers 120 may define the width of the channel 125.

Each of the nano thin film stabsters 120 has a height of 10 nm or less, and the channel has a thickness of 10 nm or less, thereby effectively separating the flowing material. Furthermore, when the height of the channel is 1 nm or less, an atom or a specific ion can be selectively separated. In other words, most of the ions contained in the gas or liquid have a size of 1 nm or less, and the channel may have a height in the range of 0.1 to 1 nm in order to separate such a size.

Meanwhile, in the channel, the aspect ratio corresponding to the height ratio based on the width may be one or more. This is because, in the case of a nanochannel, patterning is very difficult, so separation using a height rather than a width is easier.

Meanwhile, when at least one of the first and second substrates 110 and 130 is made of silicon oxide, the first and second substrates 110 and 130 may be bonded to each other through an anode bonding process . As a result, the first substrate 110 and the second substrate 130 can be prevented from being separated from each other by the pressure generated when the material flows through the channel 125.

In one embodiment of the present invention, each of the nanofilm spacers 120 may include at least one functional group selected from a hydroxyl group, an amine group, and a hydroxyl group. As such, the nanotilm spacers 120 can be hydrophilic or hydrophobic, thereby increasing the selectivity for the material flowing through the channel 125. In addition, various chemicals can be coated on the surface to inhibit transmission of ions with specific charge.

Further, each of the nano thin film spacers 120 may include a modified two-dimensional material doped with a dopant such as boron or nitrogen.

2 is a cross-sectional view illustrating a nano-channel structure according to an embodiment of the present invention.

The nanochannel structure 100 according to an embodiment of the present invention includes a first substrate 110, nano thin film spacers 120, a second substrate 130, and a clamping unit 140.

Since the first substrate, the nano thin film spacers, and the second substrate have been described with reference to FIG. 1, a detailed description thereof will be omitted.

The clamping unit 140 is provided to clamp the ends of the first and second substrates 110 and 130 together. Accordingly, the first and second substrates 110 and 120 can be prevented from being separated from each other by the pressure generated when the material flows through the channel 125.

3 is a cross-sectional view illustrating another example of each of the nanofilm spacers of FIG.

Referring to FIG. 3, each of the nanofilm spacers 120 may have a stacked structure in which single layers of two-dimensional materials are vertically stacked.

For example, the nanotilm spacers may comprise vertically stacked graphene monolayers and graphene oxide monolayers. As a result, the graphene monolayer has hydrophobicity, and since the graphene oxide monolayer has hydrophilicity, the graphene oxide monolayer becomes hydrophilic in the upper region of the channel and hydrophobic in the lower region of the channel.

Meanwhile, the nano thin film spacers 120 may have a multi-layer structure including three or more single layers 121, 123, and 125. In addition, the height of the channel can be adjusted by adjusting the number of vertically stacked monolayer layers included in the nanotilm spacers.

Manufacturing method of nano channel structure

4 is a flowchart illustrating a method of fabricating a nanochannel structure according to an embodiment of the present invention.

1 to 4, in a method of manufacturing a nano-channel structure according to embodiments of the present invention, after a first substrate is prepared, a plurality of nano-thin film spacers (S110).

In order to form the nano thin film spacers, a nano thin film is formed on the first substrate. The nano thin film may be formed through a transfer process or a chemical vapor deposition process.

Then, the nano thin film is patterned to form the nano thin film spacers. The nano thin film spacers can be formed through various processes such as an imprint process, ion beam lithography, optical lithography, and laser.

Subsequently, the first substrate having the nano thin film spacers is covered with a second substrate, thereby defining a channel together with the nano thin film spacers and the first substrate (S130).

Various bonding processes such as anodic bonding process, plasma bonding process, eutectic bonding, and the like can be used.

Particularly, in the anodic bonding process, impurity ions included in the first substrate or the second substrate made of silicon oxide are implanted into the first substrate or the second substrate and the nano thin film spacers To the interface. Therefore, the impurity ions and the materials constituting the nanofiltration spacers can be chemically bonded to each other.

For example, when each of the nanofilm spacers is made of graphene, a chemical bonding reaction may occur between the silicon oxide and the graphene contained in the first substrate or the second substrate. As a result, the bonding force between the first substrate or the second substrate and the nano thin film spacers can be increased. As a result, when the channel is formed with a relatively low pressure, no separate clamping portion is required.

In one embodiment of the present invention, two-dimensional materials such as graphene and graphene oxide have a charge or hydroxyl group (OH), carboxyl group (COOH), amino group (NH), methyl group May be attached. Thereby, ions flowing through the channel can be selectively filtered. In addition, by coating various chemicals on the surface of the material constituting the nano thin film spacers, it is possible to filter out ions having a specific charge.

In one embodiment of the present invention, before defining the channel, each of the nanofilm spacers may be further subjected to a surface treatment process using plasma, ultraviolet, or self-assembled monolayer (S120).

The above-described nanochannel structure and its manufacturing technology can be applied to liquid filtering devices such as a water purification filter, a selective ion permeable filter, and a seawater desalination filter. Furthermore, the present technology can be applied to a gas filtering apparatus for filtering gases such as carbon dioxide, oxygen, hydrogen, and the like. Furthermore, it can be applied to various fields such as flow generator, artificial kidney, and DNA screening.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

Claims (12)

A first substrate;
Nano thin film spacers formed on one surface of the first substrate and spaced apart from each other and made of two-dimensional material; And
And a second substrate formed on the first substrate provided with the nano thin film spacers and defining the channel together with the nano thin film spacers and the first substrate,
Wherein the channel has a height of 1 nm or less and has an aspect ratio of 1 or more. delete delete The nano-channel structure for a filter according to claim 1, further comprising a clamping unit for clamping ends of the first and second substrates. The method of claim 1, wherein the nano-thin film spacers graphene, graphene oxide, the reduced graphene oxide, borophene, silicene, stanene, phosphorene, graphane, germanane, transition Metal Di-chacogenides (TMSCs) - WSe 2, WS, MoSeX, MoTe x , MoS x , h-BN, or transition metal carbides. 2. The nanochannel structure of claim 1, wherein the nanotilm spacers comprise vertically stacked graphene monolayers and graphene oxide monolayers. The nano-channel structure according to claim 1, wherein each of the nanofilm spacers comprises at least one functional group selected from the group consisting of an amine group and a hydroxyl group. 2. The nanochannel structure of claim 1, wherein each of the nanofilm spacers is doped with nitrogen or a boron dopant. Forming nanofilm spacers spaced apart from each other on one surface of the first substrate and made of two-dimensional material; And
Defining a channel with the nanostructured spacers and the first substrate by covering the first substrate with the nanostructured spacers with a second substrate,
Wherein the channel has a height of 1 nm or less and has an aspect ratio of 1 or more. 2. The method of claim 1, wherein the channel has a height of 1 nm or less and has an aspect ratio of 1 or more. 10. The method of claim 9, wherein the forming of the nanofiltration spacers comprises adjusting the width of the channel through a photolithography process, a laser process, or a nanoimprint process. A method of manufacturing a channel structure. 10. The method of claim 9, wherein defining the channel comprises bonding the first and second substrates together through an anodic bonding process. The method of claim 9, wherein before defining the channel, each of the nanofilm spacers is subjected to a surface treatment process using a plasma, ultraviolet, or self-assembled monolayer. A method of manufacturing a nanochannel structure.
KR1020150080527A 2015-06-08 2015-06-08 Nano channel structure and method of manufacturing the same KR101958053B1 (en)

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CN108646520B (en) * 2018-05-07 2019-08-09 大连理工大学 The method for preparing nanochannel based on proximity uv-exposure and growing film method
US11058997B2 (en) * 2019-08-16 2021-07-13 2599218 Ontario Inc. Graphene membrane and method for making graphene membrane
CN111420639A (en) * 2020-04-01 2020-07-17 东华理工大学 Phosphorus/graphene composite two-dimensional material and preparation method and application thereof
CN111777033A (en) * 2020-05-27 2020-10-16 东南大学 Sub-nanometer fluid channel and manufacturing method thereof
CN111977611B (en) * 2020-08-31 2022-06-14 大连理工大学 Manufacturing method of micro-nano cross-scale polymer spray needle

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