KR101937527B1 - Thermal Emitter and manufacturing method thereof - Google Patents

Thermal Emitter and manufacturing method thereof Download PDF

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KR101937527B1
KR101937527B1 KR1020160058928A KR20160058928A KR101937527B1 KR 101937527 B1 KR101937527 B1 KR 101937527B1 KR 1020160058928 A KR1020160058928 A KR 1020160058928A KR 20160058928 A KR20160058928 A KR 20160058928A KR 101937527 B1 KR101937527 B1 KR 101937527B1
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South Korea
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photonic crystal
refractive index
crystal layer
layer
radiation
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KR1020160058928A
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Korean (ko)
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KR20170127965A (en
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김영석
박금환
김선경
김다솜
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전자부품연구원
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Priority to KR1020160058928A priority Critical patent/KR101937527B1/en
Priority to PCT/KR2017/004929 priority patent/WO2017196115A1/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/30—Thermophotovoltaic systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/60—Thermal-PV hybrids

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A heat radiation body capable of controlling the radiation energy wavelength of a thermal body by a simple process and capable of increasing the radiation efficiency of a desired wavelength region and a manufacturing method thereof are proposed. The heat radiant body according to the present invention includes a heat radiating part for radiating energy inside the radiating body; A second photonic crystal layer having a first refractive index and a second photonic crystal layer having a shape corresponding to a two-dimensional shape having a second refractive index different from the first refractive index; And a heat radiation promoting layer including a layer.

Description

TECHNICAL FIELD [0001] The present invention relates to a thermal radiator and a manufacturing method thereof,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat radiation body and a method of manufacturing the same, and more particularly, to a heat radiation body capable of adjusting a radiation energy wavelength of a heat radiation body by a simple process, .

The photothermal conversion device is a device for converting thermal energy into electric energy and is becoming a candidate for a next generation secondary battery in that it can be made light in weight with high energy density. However, it is still necessary to improve efficiency in order to replace lithium batteries, which are currently widely used as secondary batteries.

The photovoltaic conversion device consists of a combustor that burns fossil fuel and generates heat energy, a thermal body that receives thermal energy to emit radiant energy, and a photoelectric cell that converts radiation energy into electric energy.

The phototransformer is driven by raising the temperature of a heat source by burning the fuel through a combustor and supplying electric energy generated by the photovoltaic cell to the device. In this case, the compatibility of each component such as a combustor, a thermal body, a photoelectric cell, and a device circuit determines the overall efficiency of the photodetector. Particularly, a radiant emission distribution by wavelength of a thermal body is a key element of energy conversion efficiency .

In order to realize a high-efficiency photodetector, the maximum radiant emission interval of the thermal body must coincide with the maximum blackbody radiation wavelength band of the driving temperature, and the quantum efficiency distribution of the photovoltaic cell must coincide with the corresponding wavelength band. Such a heat radiation body is disadvantageous in that the radiation efficiency is lowered toward a longer wavelength. Further, if the temperature of the heat radiation object is raised, the pattern shape may collapse, and an additional protective film process is required to prevent this.

SUMMARY OF THE INVENTION The present invention has been conceived to solve the above problems, and it is an object of the present invention to provide a thermal body capable of controlling a radiation energy wavelength of a thermal body by a simple process, And a manufacturing method thereof.

According to an aspect of the present invention, there is provided a heat radar comprising: a heat radiating part for radiating energy inside the radiating part; A second photonic crystal layer having a first refractive index and a second photonic crystal layer having a shape corresponding to a two-dimensional shape having a second refractive index different from the first refractive index; And a heat radiation promoting layer including a layer.

The heat radiating portion may include any one of tantalum, tungsten, nickel, molybdenum, silicon carbide, and silicon substrates. The first photonic crystal layer may be formed of the same material as the heat radiation portion.

The heat radiation promotion layer may be formed by interlocking the first photonic crystal structure of the first photonic crystal layer and the second photonic crystal structure of the second photonic crystal layer.

The first photonic crystal structure formed on the first photonic crystal layer may have a diameter of 0.5 to 4 mu m and a depth of 0.2 to 8 mu m.

The second photonic crystal layer may be one comprising aluminum oxide, silica, and hafnium oxide.

The second refractive index may be 0.4 to 2.8.

The emissivity spectrum of the heat radiation promoting layer can be shifted to the long wavelength region compared with the emissivity spectrum of the first photonic crystal layer.

The thickness of the heat radiation promoting layer may be 2 to 6 占 퐉.

The difference between the first refractive index and the second refractive index may be 0.5 to 10.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a second photonic crystal structure of a two-dimensional shape on a second layer having a second refractive index; And forming a first layer of a shape corresponding to the two-dimensional shape, the first layer having a first refractive index different from the second refractive index on the second layer; And forming a heat radiation portion on the first layer, the heat radiation portion radiating the energy inside the first layer as radiant energy.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a second photonic crystal structure of a two-dimensional shape on a second layer having a second refractive index; And forming a heat radiation plate having a first refractive index different from the second refractive index on the second layer to form a heat radiation plate having a first photonic crystal structure corresponding to a two- Method is provided.

According to another aspect of the present invention, there is provided a combustion apparatus comprising: a combustion unit generating heat energy; A first photonic crystal layer having a first refractive index and a second refractive index different from the first refractive index, and a second photonic crystal layer having a second refractive index different from the first refractive index, A thermal radiation unit including a heat radiation facilitating layer including a second photonic crystal layer having a shape corresponding to the shape of the first photonic crystal layer; And a photoelectric conversion unit that receives radiation energy emitted from the heat radiation part and converts the radiation energy into electric energy.

As described above, according to the embodiments of the present invention, a photonic crystal structure can be introduced on the surface of a thermal image to increase the radiation efficiency of a specific wavelength.

In addition, the heat radiation body according to the present invention additionally forms a layer covering the photonic crystal structure, so that it is easy to control the radiation energy wavelength, thereby exhibiting excellent radiation efficiency.

In addition, when a thermal body is manufactured according to the present invention, it is possible to form a pattern on a dielectric substrate that is easier to form than a photonic crystal structure in a metal or the like, to easily form a photonic crystal structure pattern and precisely control the wavelength of a thermal body Whereby a highly reliable photodetector can be obtained.

1 is a cross-sectional view of a thermal body according to an embodiment of the present invention.
FIG. 2 is a view showing a first photonic crystal layer and a second photonic crystal layer in the thermal body of FIG. 1. FIG.
3 is an enlarged view of the first photonic crystal structure of FIG.
4 is a view showing an emissivity spectrum when a first photonic crystal structure is formed on a tantalum thermal radiation article and an emissivity spectrum when a second photonic crystal layer of aluminum oxide is additionally formed, FIG. 6 is a graph showing the emissivity spectrum in the case where the photonic crystal structure is formed and the emissivity spectrum in the case where the second photonic crystal layer is further formed. FIG. And FIG. 5 is a diagram showing the emissivity spectrum and the emissivity spectrum in the case where the second photonic crystal layer is further formed.
7 is a cross-sectional view of a thermal body according to another embodiment of the present invention.
8 is a cross-sectional view of a thermal body according to another embodiment of the present invention.
9 to 12 are views showing photonic crystal structures according to still another embodiment of the present invention.
FIGS. 13 to 15 are views provided in the description of a method for manufacturing a heat radome according to another embodiment of the present invention.
16 is a cross-sectional view of a thermal body according to another embodiment of the present invention.
FIG. 17 is a view showing a photodetector according to another embodiment of the present invention. FIG.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention. It should be understood that while the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, The present invention is not limited thereto.

1 is a cross-sectional view of a thermal body according to an embodiment of the present invention. The thermal body 100 according to the present embodiment includes a heat radiating part 110 for radiating internal energy as radiation energy; Dimensional shape having a first refractive index and a second-dimensional shape having a second refractive index different from the first refractive index, which correspond to a two-dimensional shape having a first refractive index and a second refractive index different from the first refractive index, And a second radiation confinement layer including a second photonic crystal layer 130 having a shape that is substantially the same as that of the first radiation confinement layer.

The thermal body 100 includes a thermal radiation unit 110 that radiates the energy inside the thermal radiation unit 110. The thermal radiation unit 110 may include any one of tantalum, tungsten, nickel, molybdenum, silicon carbide, and silicon have.

A thermal body 100 according to the present invention includes a first photonic crystal layer 120 having a two-dimensional shape having a first refractive index and a second photonic crystal layer 120 having a second refractive index different from the first refractive index, And a second radiation confinement layer including a second photonic crystal layer 130 having a shape corresponding to a two-dimensional shape having a refractive index. That is, the heat radiation promotion layer includes a first photonic crystal layer 120 and a second photonic crystal layer 130. The radiation energy E R passes through the first photonic crystal structure in the thermal radiation unit 110 and is emitted to the outside through the second photonic crystal layer 130.

The photonic crystal is intended to control light by using a special interaction of nanostructure and light corresponding to the visible light region, and it is possible to control the reflection and selective light transmission characteristics by changing the arrangement among the particles, It is possible to increase the emission efficiency of a desired wavelength band by forming a photonic crystal structure on the surface. In other words, when the photonic crystal structure is formed in the heat radiation body 100, the photonic band gap of the material constituting the heat radiation body can be controlled to increase the radiation of a desired wavelength band.

The wavelength-related radiation efficiency of the thermal body 100 can be increased by forming only the photonic crystal structure. By controlling the depth or diameter of the photonic crystal structure, the radiation spectrum and the cut-off wavelength band can be controlled. However, after the formation of the photonic crystal structure, the radiation efficiency decreases as the wavelength increases toward the longer wavelength side, and as the temperature of the thermal body increases, the pattern shape may collapse. As a result, the second photonic crystal layer 130 is further formed .

FIG. 2 is a view showing a first photonic crystal layer and a second photonic crystal layer in the thermal body of FIG. 1. FIG. The second photonic crystal layer 130 is a layer having a second photonic crystal structure 131 in contact with the first photonic crystal structure 121 of the first photonic crystal layer 120. The thermal radiation promoting layer may be formed such that the first photonic crystal structure 121 of the first photonic crystal layer 120 and the second photonic crystal structure 131 of the second photonic crystal layer 130 are interdigitated with each other. In other words, the second photonic crystal layer 130 may be a layer covering the first photonic crystal structure 121 of the first photonic crystal layer 120. Accordingly, the first photonic crystal structure 121 does not contact the outside air. The first photonic crystal structure 121 and the second photonic crystal structure 131 have the same pattern.

The second photonic crystal layer 130 has a second refractive index different from the first refractive index of the first photonic crystal layer 120. The second photonic crystal layer 130 has a refractive index different from the refractive index of the air. Accordingly, since the refractive index of the second photonic crystal layer 130 is higher than that of air, the wavelength of the light when it is in a material other than air is inversely proportional to the refractive index of the material, And moves to the long wavelength band.

In the absence of the second photonic crystal layer 130, there is a method of increasing the diameter of the pattern of the first photonic crystal structure 121 in order to move the radiation section to the long wavelength band. However, when the diameter of the pattern is increased, the filling rate of the pattern is decreased because the total energy emitting surface is limited. Therefore, since the fill factor of the pattern is decreased and the radiation efficiency is decreased, the method of increasing the diameter of the pattern is disadvantageous.

However, if the second photonic crystal layer 130 is added on the first photonic crystal layer 120, the refractive index of the second photonic crystal layer 130 may be adjusted to move the photonic band to the long wavelength band, It is possible to prevent a decrease in efficiency.

The second photonic crystal layer 130 is a material having a refractive index different from the first refractive index, and it is preferable that the second photonic crystal layer 130 is transparent because it must emit energy. The second photonic crystal layer 130 may be a dielectric substrate and may include, for example, aluminum oxide (Al 2 O 3 ), silica (SiO 2 ), and hafnium oxide (HfO 2 ). The second refractive index of the second photonic crystal layer 130 may be 0.4 to 2.8. In addition, the difference between the first refractive index and the second refractive index may be 0.5 to 10. In addition, the thickness of the heat radiation facilitating layer including the first photonic crystal layer 120 and the second photonic crystal layer 130 may be 2 to 6 탆.

3 is an enlarged view of the first photonic crystal structure of FIG. The first photonic crystal structure 121 formed on the first photonic crystal layer 120 may have a diameter W1 of 0.5 to 4 占 퐉 and a depth h1 of 0.2 to 8 占 퐉. In order to satisfy the formation conditions of the first resonance mode of a single pattern, the diameter of the photonic crystal pattern should be at least 0.5 mm and the depth should be at least 0.2 mm. As the radius of the pattern increases, the radiation spectrum shifts to the long wavelength band due to the resonance condition of the cut-off wavelength. Considering the driving temperature and the absorption wavelength of the photoelectric cell, a maximum radius of 4 μm or less is sufficient. As the depth of the photonic crystal pattern increases, more modes are present inside the pattern, resulting in a higher absorption rate. Therefore, it is desirable to ensure a depth of up to 8 mm, considering the tendency to vary for different thermal materials.

As described above, the emissivity spectrum of the heat radiation facilitating layer including both the first photonic crystal layer 120 and the second photonic crystal layer 130 is higher than the emissivity spectrum in the case where the first photonic crystal layer 120 alone exists, Lt; / RTI >

4 is a view showing an emissivity spectrum when a first photonic crystal structure is formed on a tantalum thermal radiation article and an emissivity spectrum when a second photonic crystal layer of aluminum oxide is additionally formed, FIG. 6 is a graph showing the emissivity spectrum in the case where the photonic crystal structure is formed and the emissivity spectrum in the case where the second photonic crystal layer is further formed. FIG. And FIG. 5 is a diagram showing the emissivity spectrum and the emissivity spectrum in the case where the second photonic crystal layer is further formed.

Fig. 4 is a graph showing the emission spectrum (black line) of a tantalum thermal radiation material having a cylindrical photonic crystal pattern having a depth of 2.2 탆 and a radius of 380 nm formed at a period of 1 탆 and an emission spectrum (Red line). In the case of the red line, it can be seen that the emission spectrum of the tantalum thermal radiation shown by the black line is shifted to the long wavelength region.

Fig. 5 shows the emission spectrum (black line) of a tungsten heat radiation material having a cylindrical photonic crystal pattern with a depth of 2.2 탆 and a radius of 380 nm formed at a period of 1 탆 and an emission spectrum (black line) when aluminum oxide was added to the tungsten heat radiation material as a second photonic crystal layer (Red line). In the case of the red line, it can be seen that the emission spectrum of the tungsten heat radiation body shown by the black line is shifted to the long wavelength region.

Fig. 6 is a diagram showing the emission spectrum when the size of the pattern is increased. Fig. A radiation spectrum (black line) of a tantalum thermal radiation article having a cylindrical photonic crystal pattern with a depth of 2.2 m and a radius of 0.6 m and an emission spectrum when aluminum oxide was added to the tantalum thermal radiation body in Fig. 4 as a second photonic crystal layer FIG. That is, in the present embodiment, when the diameter of the photonic crystal pattern is increased in the tantalum thermal radiation body, the emission spectrum moves to the long wavelength region, and even when the second photonic crystal layer is added instead of increasing the diameter of the photonic crystal pattern, You can see that it moves. In the case of the red line, the emission spectrum is extended to the longer wavelength side as compared with the black line.

7 is a cross-sectional view of a thermal body according to another embodiment of the present invention. In the thermal body 200 according to the present embodiment, the first photonic crystal layer 220 and the second photonic crystal layer 230 are located on the heat radiation portion 210.

The second photonic crystal layer 230 is formed as a thin film layer along the first photonic crystal structure 221 of the first photonic crystal layer 220 such that the first photonic crystal structure is exposed on the upper surface. In the case of this embodiment, if the second photonic crystal layer 230 is formed by a process such as thin film deposition, the thickness of the second photonic crystal layer 230 is thin, so that the process time is shortened and the process is simplified. Also in this case, the second photonic crystal layer 230 covers the first photonic crystal layer 220, so that the long wavelength of the radiation spectrum can be shifted, and the first photonic crystal structure at high temperature can be prevented from collapsing.

8 is a cross-sectional view of a thermal body according to another embodiment of the present invention. In the thermal body 300 of this embodiment, the first photonic crystal layer 320, the second photonic crystal layer 330, and the third layer 340 are positioned on the heat radiation portion 310.

The second photonic crystal layer 330 is formed in the form of a thin film layer along the first photonic crystal structure of the first photonic crystal layer 320 such that the first photonic crystal structure 321 is exposed on the top surface. In the case of this embodiment, the third photonic crystal structure can further effectively protect the first photonic crystal structure at a high temperature by further including a third layer on the second photonic crystal layer 330, so that the pattern can be more effectively prevented from collapsing.

9 to 12 are views showing photonic crystal structures according to still another embodiment of the present invention. 9 to 12 show examples of a photonic crystal structure, that is, a photonic crystal pattern. The photonic crystal pattern of FIG. 9 is a cylindrical structure, the photonic crystal pattern of FIG. 10 is hemispherical, the photonic crystal pattern of FIG. 11 is conical, and the photonic crystal pattern of FIG. The shape and size of the pattern can be selected in consideration of the desired radiation spectrum or wavelength region.

FIGS. 13 to 15 are views provided in the description of a method for manufacturing a heat radome according to another embodiment of the present invention. According to the present embodiment, a step of forming a second photonic crystal structure 431 having a two-dimensional shape on a second layer 430 having a second refractive index; And forming a first layer (420) having a shape corresponding to the two-dimensional shape, the first layer having a first refractive index different from the second refractive index on the second layer (430). And forming a heat radiation part 410 that radiates energy inside the first layer 420 as radiation energy is performed to manufacture the heat radiation body 400. [

The second layer 430 having a second refractive index other than the thermal radiation part 410 is first prepared to form the second photonic crystal structure 431 having a two-dimensional shape on the surface thereof (See Fig. 13). That is, instead of forming the first photonic crystal structure in the first layer, a second photonic crystal structure is formed by preparing a second layer 430, and a first layer is formed on the second photonic crystal structure 431, 2 photonic crystal structure 431 is transferred to form the first layer.

Since the first layer is in contact with the thermal body, the first layer may be formed of metal so that internal thermal energy can be transmitted. In the case of metal, a method of directly patterning and etching the metal such as photolithography or laser interference lithography is used to make a pattern on a metal surface. Since the structural parameters (period, diameter, and depth) of the photonic crystal pattern determine the radiation spectrum, it is necessary to precisely control the shape of the pattern. However, due to the unique properties of the metal, have.

On the other hand, since the dielectric can freely adjust the shape of the pattern, the dielectric substrate of the desired pattern is fabricated into the second layer, and then the first layer is laminated thereon (see FIG. 14) The first photonic crystal structure can be formed. Therefore, it is possible to realize photonic crystals of various structures and finer sizes that are difficult to realize in the conventional direct etching method.

Accordingly, by using a method of forming a pattern on a dielectric surface and laminating a heat radiating material, time and cost can be reduced as compared with a conventional patterning process through etching.

A thermal barrier 410 is formed on the first layer 420 to radiate energy therein as a radiant energy to produce a thermal barrier 400 (FIG. 15). The radiation energy E R is emitted from the heat radiation part 410 through the first photonic crystal structure to the outside through the second layer 430.

16 is a cross-sectional view of a thermal body according to another embodiment of the present invention. According to this embodiment, a step of forming a second photonic crystal structure 521 having a two-dimensional shape on a second layer 530 having a second refractive index is performed. Forming a thermal barrier plate (510) having a first refractive index different from the second refractive index on the second layer (530) to form a thermal barrier plate having a first photonic crystal structure with a shape corresponding to the two-dimensional shape; (500). ≪ IMAGE >

In this embodiment, instead of forming the first layer on the second layer 530 and forming a thermal body on the upper layer, a heat radiator plate 510 (see FIG. 5) that includes the first layer and the thermal body on the second layer 530 ). Therefore, in this embodiment, the first layer and the heat body are formed of the same material.

FIG. 17 is a view showing a photodetector according to another embodiment of the present invention. FIG. According to this embodiment, a combustion unit 1100 for generating heat energy; Nations for emitting a radiant energy by receiving the thermal energy (E H) from a combustion unit 1100 Blackwood (1210) and radiation (E R) of the first photonic crystals of a two-dimensional shape having a first refractive index of the energy emitting surface which emits A thermal radiation unit 1200 including a layer 1220 and a heat radiation facilitating layer including a second photonic crystal layer 1230 having a shape corresponding to a two-dimensional shape having a second refractive index different from the first refractive index; And a photoelectric conversion unit 1300 that receives and converts the radiant energy emitted from the heat radiation unit into electric energy E E.

The photodetector 1000 of the present embodiment is a device including a thermal body structure in which a photonic crystal structure is introduced. The photodetector 1000 is driven by raising the temperature of a heat source by burning fuel through a combustor and supplying the photovoltaic device with electric energy generated by absorption of radiant energy emitted from the heat source.

In order to increase the efficiency of the photodetector 1000, it is preferable that the maximum radiation emission period of the thermal body coincides with the maximum blackbody radiation wavelength band of the driving temperature, and the quantum efficiency distribution of the photovoltaic cell also coincides with the corresponding wavelength band. Therefore, the heat radiation unit 1200 according to the present embodiment can have a heat radiation facilitating layer formed on the energy-emitting surface to satisfy such a condition as much as possible, thereby increasing the efficiency of the photodetector 1000.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, many modifications and changes may be made by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims. The present invention can be variously modified and changed by those skilled in the art, and it is also within the scope of the present invention.

100, 200, 300, 400, 500
110, 210, 310, 410, 510, 1210,
120, 220, 320, 420, 1220 The first photonic crystal layer
121, 521 First photonic crystal structure
130, 230, 330, 430, 530, 1230. The second photonic crystal layer
131, 431 Second photonic crystal structure
340 Third Floor
1000 thermal conversion device
1100 Combustion Unit

Claims (12)

A heat radiating part for radiating energy inside the radiating body; And
And a heat dissipation member disposed on an energy-emitting surface from which the radiation energy of the heat-
A first photonic crystal layer in which a first photonic crystal structure of a two-dimensional shape having a first refractive index is formed and
And a second radiation confinement layer including a second photonic crystal layer having a second photonic crystal structure having a shape corresponding to the two-dimensional shape having a second refractive index different from the first refractive index,
The first photonic crystal structure and the second photonic crystal structure are interdigitated,
The second photonic crystal layer is a layer covering the first photonic crystal structure of the first photonic crystal layer,
The refractive index of the second photonic crystal layer is higher than the refractive index of air,
The refractive index of the second photonic crystal layer is higher than the refractive index of air and the emissivity spectrum of the heat radiation facilitating layer including the first photonic crystal layer and the second photonic crystal layer does not have the second photonic crystal layer, Is shifted to a longer wavelength region than the emissivity spectrum.
The method according to claim 1,
Wherein the heat radiating portion includes any one of tantalum, tungsten, nickel, molybdenum, silicon carbide, and a silicon substrate.
The method according to claim 1,
Wherein the first photonic crystal layer is formed of the same material as the heat radiation portion.
The method according to claim 1,
Wherein the first photonic crystal structure formed on the first photonic crystal layer has a diameter of 0.5 to 4 占 퐉 and a depth of 0.2 to 8 占 퐉.
The method according to claim 1,
Wherein the second photonic crystal layer comprises any one of aluminum oxide, silica, and hafnium oxide.
The method according to claim 1,
Wherein the second refractive index is higher than the refractive index of air and is 2.8 or lower.
delete The method according to claim 1,
Wherein the heat radiation facilitating layer has a thickness of 2 to 6 占 퐉.
The method according to claim 1,
Wherein the difference between the first refractive index and the second refractive index is 0.5 to 10.
delete delete A combustion unit generating heat energy;
A first photonic crystal layer having a two-dimensional first photonic crystal structure having a first refractive index formed on an energy-emitting surface from which the radiant energy is emitted, and a second photonic crystal layer having a first refractive index, And a second photonic crystal layer having a second photonic crystal structure of a shape corresponding to the two-dimensional shape having a second refractive index different from the refractive index of the second photonic crystal layer; And
And a photoelectric conversion unit that receives the radiation energy emitted from the thermal radiation unit and converts the radiation energy into electric energy,
The heat-
The first photonic crystal structure and the second photonic crystal structure are interdigitated,
The second photonic crystal layer is a layer covering the first photonic crystal structure of the first photonic crystal layer,
The refractive index of the second photonic crystal layer is higher than the refractive index of air,
The refractive index of the second photonic crystal layer is higher than the refractive index of air and the emissivity spectrum of the heat radiation facilitating layer including the first photonic crystal layer and the second photonic crystal layer does not have the second photonic crystal layer, Is shifted to a longer wavelength region than an emissivity spectrum.
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KR102106686B1 (en) * 2018-02-22 2020-05-04 연세대학교 산학협력단 Image device using photonic crystal, recording method of the same and method of fabricating the same
KR102190420B1 (en) * 2018-12-18 2020-12-11 경희대학교 산학협력단 Cerium Oxide-based Photonic Crystal Thermal Emitter Having High-temperature Stability and Method for Preparing the Same

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US20110284059A1 (en) * 2010-05-21 2011-11-24 Massachusetts Institute Of Technology Thermophotovoltaic energy generation

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US20030132705A1 (en) * 2001-08-27 2003-07-17 Gee James M. Photonically engineered incandescent emitter
US20110284059A1 (en) * 2010-05-21 2011-11-24 Massachusetts Institute Of Technology Thermophotovoltaic energy generation

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