KR101935348B1 - Phase-change material multi-layer and producing method of the same, and phase-change memory device including the same - Google Patents

Abstract

A multilayer phase change material film, a method of manufacturing the multilayer phase change material film, and a phase change memory element including the multilayer phase change material film.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a multilayer phase change material film, a method of manufacturing the same, and a phase change memory device including the phase change material film,

The present disclosure relates to a multilayer phase change material film and a method of making the same, and to a phase change memory device comprising the multilayer phase change material film.

Since the phase change memory device is driven by using the difference in resistance caused by the crystalline / amorphous phase change of the phase change material layer, these two states are associated with the bit memories 1 and 0 of the single bit memory, Device can be implemented. Unlike DRAM and SRAM, a phase-change memory device is a nonvolatile memory device in which stored information is stored even when the power is turned off. Once written information can be stored for more than 20 years at a high temperature of 70 ° C, It is possible to operate according to the original function even in outer space, and it is possible to read and erase information repeatedly more than 1,000 times with high durability. In addition, the fast read / access time, which is one of the main characteristics of phase change memory, is 1,000 times faster than flash memory, which is the representative of nonvolatile memory which shows a characteristic of several microseconds to tens of microseconds. It has ns ~ tens of ns. It has a very short read / write time like SRAM, which is advantageous for fast operation. In addition, the operating voltage can be operated at a voltage as low as 2 to 5 V, which is comparable to that of DRAM. Nevertheless, since it has a relatively simple cell structure, it is possible to reduce the device size to the DRAM level, which is very advantageous for integration, and is applicable to embedded memory for SoC as well as stand-alone memory.

Ge-Sb-Te ternary chalcogenide material (GST) is the most commonly used material among phase-change materials, which is a key material of PRAM. GST is known to cause inter-cell thermal interference due to its low crystallization temperature. Because of its high melting temperature, it requires a high-voltage reset pulse for the amorphization (reset) It has disadvantages. Further, it is known that there is a weakness in stability of materials such as difficulty of multi-level coding advantageous for integration, deterioration of retention due to high integration, and drift phenomenon. Therefore, for the development of the phase-transition memory field, a phase transition material which can operate at a low current in a miniaturized structure, minimize mutual thermal interference, maintain a stable amorphous state for each phase unsafe transition due to thermal interference, Research is proceeding. The confined structure of the phase-change memory cell, which was announced in 2010, has holes 7.5 nm in width, 17 nm in length and 30 nm in depth and embedding GST to minimize interference between cells and to manufacture ultra-high-density memory devices .

However, only the single bits of 1 and 0 are implemented using the difference in resistance caused by the crystalline / amorphous phase change of the phase change material layer. Currently, four state information (11, 10, 01, 00) or eight state information (111, 110, 101, 100, 011, 010, 001, 000) are applied to a phase change memory in one cell, such as MLC (Multi level cell) and TLC A multi-bit phase-change memory device can be constructed using four different states or eight states of the resistance. However, GST, which is a key material of phase-change memory at present, has a high melting temperature and requires a high-voltage reset (crystallization) pulse for the amorphization (reset) The composition is mixed according to the crystalline / amorphous phase change of the Ge-Sb-Te atom, and the advantage of multi-level coding advantageous for integration is lost.

In addition, when an electric field is applied between the upper electrode and the lower electrode for amorphization and crystallization, the cation (Ge, Sb) and the anion (Te) in the GST thin film having the initial uniform composition repeatedly move in different directions And thus the composition becomes uneven, thereby losing the advantage of multi-level coding [IEDM 16, p. 83-86, ALD-based Confined PCM with a Metallic Liner toward Unlimited Endurance, W. Kim et al.].

Korean Patent Laid-Open Publication No. 2008-0028544 discloses a phase-change memory element having a confined cell structure and a manufacturing method thereof.

The present disclosure relates to a multilayer phase change material film and a method of making the same, and to a phase change memory device comprising the multilayer phase change material film.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, there is provided a semiconductor device comprising: a plurality of layers of a phase change material film; And a separation membrane formed between each layer of the phase change material film, wherein the separation membrane prevents element movement between the layers of the phase change material film, and wherein the separation membrane comprises a fertile side material. Thereby providing a material film.

According to a second aspect of the present invention, there is provided a plasma display panel comprising: a first electrode; A multilayered phase change material film according to the first aspect of the present invention formed on the first electrode; And a second electrode formed on the multi-layered phase change material film.

A third aspect of the invention provides a method of fabricating a semiconductor device, comprising: forming a first electrode on a portion of a substrate; An insulating layer formed on the substrate on which the first electrode is formed and including a hole exposing the first electrode; A multilayered phase change material film according to the first aspect of the present invention formed on the exposed first electrode in the hole; And a second electrode formed on the multi-layered phase change material film.

A fourth aspect of the invention provides a method of forming a layer of a phase change material, Forming a separation membrane in the layer of the phase change material film; And forming a layer of a phase change material layer on the separation layer, the method comprising the steps of: forming a separation layer between the layers of the phase change material layer Wherein the separation membrane prevents element movement between the layers of the phase change material film and the separation membrane comprises a fertile side material.

The multi-layered phase-change material film according to an embodiment of the present invention includes a separation membrane including a high-conductivity material or a non-oxide conductive material between the phase-change materials, The interlayer element movement is prevented, the composition of the upper layer and the lower layer can be prevented from being mixed, and thus the multi-level characteristic can be maintained.

When the multi-layered phase change material layer according to an embodiment of the present invention includes multi-layered phase change material layers having different compositions, multi-coding can be performed by having different crystallization temperatures for each layer.

FIG. 1 is a schematic diagram showing a phase change multilayer film composition change with time in a conventional phase-change multilayer structure memory device without a separation film. FIG.
Figure 2 is a schematic diagram of a memory device comprising a multi-layered phase change material film comprising a separator according to one embodiment of the present disclosure.
3 is a schematic diagram of a multi-layered phase change material film memory device comprising (a) a conventional confined structure multilayer film and (b) a separator according to one embodiment of the present invention.
4 is a graph of the resistance change with temperature of a memory element of a multi-layered phase change material film including (a) a conventional single-layered phase-change material film and (b) a separator according to an embodiment of the present invention.
FIG. 5 is a graph of temperature versus resistance for various phase change materials that may be used in the fabrication of a memory device comprising a multi-layered phase change material film comprising a separator according to one embodiment of the present disclosure.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as " comprising ", it means that it can include other elements as well, without departing from the other elements unless specifically stated otherwise.

The terms " about ", " substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure.

The word " step (or step) " or " step " used to the extent that it is used throughout the specification does not mean " step for.

Throughout this specification, the term " combination (s) thereof " included in the expression of the machine form means a mixture or combination of one or more elements selected from the group consisting of the constituents described in the expression of the form of a marker, Quot; means at least one selected from the group consisting of the above-mentioned elements.

Throughout this specification, the description of "A and / or B" means "A or B, or A and B".

Throughout the specification, the term "alkyl group" may be a linear or branched, saturated or unsaturated C _1-6 alkyl group, and includes, for example, methyl, ethyl, propyl, butyl, pentyl, Or all of the possible isomers thereof.

Throughout this specification, the term " alkoxy group " refers to an alkyl group as defined above wherein the alkyl group is linked to an oxygen atom, for example, methoxy, ethoxy, propoxy, butoxy, pentoxy, hexyloxy, But may be, but not limited to, all isomers.

Throughout the specification, the term "alkylamine group" refers to an amino group (-NHR or -NRR ', wherein R and R' may be independent of one another or may be the same Wherein the alkyl group is the same as defined above. For example, the alkylamine group may be substituted with one or more substituents selected from the group consisting of methylamino, ethylamino, n-propylamino, isopropylamino, n-butylamino, 2-butylamino, iso-butylamino, Propylamino, ethyl-isopropylamino, diethylamino, diethylamino, diethylamino, diethylamino, diisopropylamino, dibutylamino, methyl-ethylamino, methyl-propylamino, , Ethyl-butyl-amino, ethyl-isobutyl-amino, and the like.

Throughout the specification, the term "film" may include, but is not limited to, "thin film".

For the purposes of the present specification, " X " or " halogen or halide " means that a halogen atom belonging to group 17 of the periodic table is included in the compound as a functional group form. For example, the halogen atom is chlorine, bromine, Or iodine, but is not limited thereto.

Hereinafter, embodiments of the present invention are described in detail, but the present invention is not limited thereto.

According to a first aspect of the present invention, there is provided a semiconductor device comprising: a plurality of layers of a phase change material film; And a separation membrane formed between each layer of the phase change material film, wherein the separation membrane prevents element movement between the layers of the phase change material film, and wherein the separation membrane comprises a fertile side material. Thereby providing a material film.

In one embodiment of the present invention, the phase change temperatures of the respective layers of the phase change material layer may be the same or different from each other, but the present invention is not limited thereto.

In one embodiment of the invention, each layer of the phase change material layer comprises an ABC phase change material, where A is at least one of the group comprising Ge, Sn, Si, In, Al, Ag, And B is selected from the group comprising Sb, As, Bi, and P, and C may be selected from the group comprising S, Se, and Te, but is not limited thereto. For example, the A-B-C phase change material may be Ge-Sb-Te series, In-Sb-Te series, Sn-Sb-Se series or the like, but is not limited thereto.

In one embodiment of the present invention, each layer of the phase change material layer may be doped after forming the A-B-C phase change material layer, but may not be limited thereto. For example, the doping may include, but is not limited to, N-, C-, or Si-doping.

In one embodiment of the invention, the thickness of each layer of the phase change material layer may be the same or different from each other, and the thickness of each phase change layer is not particularly limited and may be selected by the designer It can be changed freely.

In one embodiment of the invention, the thickness of each phase-change material layer may be independently from about 0.1 nm to about 50 nm, but is not limited thereto. For example, the thickness of each layer of the phase change material film may range from about 0.1 nm to about 50 nm, from about 1 nm to about 50 nm, from about 10 nm to about 50 nm, from about 20 nm to about 50 nm, From about 1 nm to about 40 nm, from about 10 nm to about 40 nm, from about 20 nm to about 40 nm, from about 30 nm to about 40 nm, from about 40 nm to about 50 nm, from about 0.1 nm to about 40 nm, from about 1 nm to about 20 nm, from about 0.1 nm to about 20 nm, from about 0.1 nm to about 30 nm, from about 1 nm to about 30 nm, from about 10 nm to about 30 nm, from about 20 nm to about 30 nm, But is not limited to, about 10 nm to about 20 nm, about 0.1 nm to about 10 nm, about 1 nm to about 10 nm, or about 0.1 nm to about 1 nm.

In one embodiment of the present invention, the oxide-based material contained in the separator may be selected from the group consisting of Ti, Ta, W, Hf, Zr, Ru, Mo, Co, Ni, Mn and their nitrides or chalcogen compounds , Carbon-based materials, SiN, SiC, SiCN, AlN, boron nitride (BN), and carbon nitride (CN). The carbon-based material may include, but is not limited to, carbon, CNT, or graphene. The chalcogen compound may be any of those known in the art without any particular limitation. For example, a transition metal chalcogenide (TMDC) may be used. Specifically, MoS ₂ , WS ₂ , MoSe ₂ , WSe ₂ , MoTe _2, or transition metal chalcogen compounds of MoSe ₂ may be used, but are not limited thereto. The spacing of the separation membranes is determined by the thickness of the deposited phase change material, and the thickness of the separation membranes can be freely changed by the designer depending on the phase change characteristics.

In one embodiment of the present invention, the separation layer prevents element movement between the layers of the phase change material layer, and may include an electrically conductive material or non-conductive material of the non-oxide side material, and may be an insulating layer. This is because the oxygen component included in the insulating film may adversely affect the memory element.

In one embodiment of the present invention, the thicknesses of the separation membrane layers may be the same or different from each other, and the thickness of each separation membrane layer is not particularly limited and may be freely changed by a designer for manufacturing a desired phase change material membrane have.

In one embodiment of the present invention, the thickness of each of the separation membrane layers may independently be about 0.1 nm to about 10 nm, but is not limited thereto. For example, the thickness of each layer of the separation membrane can be from about 0.1 nm to about 10 nm, from about 0.1 nm to about 5 nm, from about 0.1 nm to about 3 nm, from about 0.1 nm to about 1 nm, from about 1 nm to about 10 nm , From about 1 nm to about 5 nm, or from about 1 nm to about 3 nm, but is not limited thereto.

In one embodiment of the present invention, the thickness of each phase-change material layer and the thickness of each separation layer may be the same or different, and the thickness is not particularly limited. For example, in the case of three layers of phase change material and two layers of the separation membrane, the separation membrane thickness between phase change material 1 and phase change material 2 is about 2 nm, between phase change material 2 and phase change material 3 The membrane thickness may be about 5 nm, but is not limited thereto.

In one embodiment, the phase change temperature (crystallization temperature) of each layer of the phase change material layer may range from about 100 ° C to about 500 ° C, but is not limited thereto. For example, the phase change temperature (crystallization temperature) of each layer of the phase change material film may be from about 100 캜 to about 500 캜, from about 100 캜 to about 400 캜, from about 100 캜 to about 300 캜, About 300 DEG C to about 500 DEG C, about 200 DEG C to about 500 DEG C, about 200 DEG C to about 400 DEG C, about 200 DEG C to about 300 DEG C, about 300 DEG C to about 500 DEG C, Range, but may not be limited thereto. For example, in the case of three layers of phase change material and two layers of said separation layer, the phase change of each layer of the phase change material layer may be sequentially changed at about 100 캜, about 120 캜, and about 140 캜, But is not limited thereto. In one embodiment of the present invention, when the compositions of the phase change material layers are different from each other, the phase change temperature of each layer may be gradually increased or gradually decreased, but the present invention is not limited thereto.

In one embodiment of the present invention, the phase change temperature of each layer of the phase change material layer may be controlled according to the composition of each layer of the phase change material layer, but may not be limited thereto.

According to a second aspect of the present invention, there is provided a plasma display panel comprising: a first electrode; A multilayered phase change material film according to the first aspect of the present invention formed on the first electrode; And a second electrode formed on the multi-layered phase change material film.

But the present invention can be applied to all aspects of the present invention, although the overlapping description of the contents of the multilayered phase change material film of the first aspect of the present invention is omitted.

In one embodiment of the present invention, the phase change memory element may be, but not limited to, implementing multi-level coding by including the multi-layered phase change material film.

In one embodiment of the present invention, the heater may further include a heater disposed between the first electrode and the multi-layered phase change material film, but the present invention is not limited thereto.

In one embodiment of the present invention, the heater may further include a heater positioned between the second electrode and the multi-layered phase change material film, but the present invention is not limited thereto.

In one embodiment of the present invention, the heater may include, but is not limited to, a metal material and a compound thereof, an oxide thereof, or a nitride thereof.

In one embodiment of the present invention, each layer of the multi-layered phase change material film may be phase-shifted by an electrical signal, but may not be limited thereto.

In one embodiment of the invention, the electrical signal may be a voltage in the range of about 1 mV to about 20 V, or a current in the range of about 1 nA to about 1 A, But it may be, but is not limited to, a pulse in the range of about 1 ms.

For example, the electrical signal may be in the range of about 1 mV to about 20 V, about 1 mV to about 10 V, about 1 mV to about 5 V, about 1 mV to about 1 V, about 1 mV to about 500 mV, mV to about 100 mV, or from about 1 mV to about 50 mV, or the electrical signal may range from about 1 nA to about 1 A, from about 1 nA to about 100 mA, from about 1 nA to about 10 mA, About 100 nA to about 100 A, about 1 nA to about 1 A, about 1 nA to about 100 nA, about 100 nA to about 1 A, about 100 nA to about 10 mA, about 100 nA to about 100 A, about 100 from about 1 μA to about 100 μA, from about 1 μA to about 1 A, from about 1 μA to about 100 mA, from about 1 μA to about 10 mA, from about 1 μA to about 100 μA, from about 100 μA to about 1 A, But is not limited to, a current in the range of about 100 mA, about 100 A to about 10 mA, or about 10 mA to about 1A.

For example, the electrical signal may be from about 1 ns to about 1 ms, from about 1 ns to about 100 μs, from about 1 ns to about 10 μs, from about 1 ns to about 1 μs, from about 1 ns to about 100 ns, from about 10 ns to about 1 ns, from about 10 ns to about 100 ns, from about 10 ns to about 100 ns, from about 10 ns to about 10 μs, from about 10 ns to about 1 μs, from about 10 ns to about 100 ns, About 1 ms to about 1 ms, from about 1 ms to about 100 ms, from about 1 ms to about 10 ms, from about 100 ms to about 100 ms, from about 100 ms to about 10 ms, from about 100 ms to about 1 ms, , about 10 μs to about 1 ms, about 10 μs to about 100 μs, or about 100 μs to about 1 ms.

A third aspect of the invention provides a method of fabricating a semiconductor device, comprising: forming a first electrode on a portion of a substrate; An insulating layer formed on the substrate on which the first electrode is formed and including a hole exposing the first electrode; A multilayered phase change material film according to the first aspect of the present invention formed on the exposed first electrode in the hole; And a second electrode formed on the multi-layered phase change material film.

But the present invention can be applied to all aspects of the present invention, although the overlapping description of the contents of the multilayered phase change material film of the first aspect of the present invention is omitted.

In one embodiment of the present invention, the phase change memory element may be, but not limited to, implementing multi-level coding by including the multi-layered phase change material film.

In one embodiment of the present invention, the phase change memory element may include, but is not limited to, the multi-layered phase change material film formed laterally in the first electrode exposed in the hole.

In one embodiment of the present invention, the heater may further include a heater positioned between the first electrode and the multi-layered phase change material film, but the present invention is not limited thereto.

In one embodiment of the present invention, the heater may further include a heater positioned between the second electrode and the multi-layered phase change material film, but the present invention is not limited thereto.

In one embodiment of the present invention, the heater may include, but is not limited to, a metal material and a compound thereof, an oxide thereof, or a nitride thereof.

In one embodiment of the present invention, the phase change memory device according to this aspect may include, but is not limited to, a confined structure.

In one embodiment of the present invention, each layer of the multi-layered phase change material film may be phase-shifted by an electrical signal, but may not be limited thereto.

In one embodiment of the invention, the electrical signal may be a voltage in the range of about 1 mV to about 20 V, or a current in the range of about 1 nA to about 1 A, But it may be, but is not limited to, a pulse in the range of about 1 ms.

For example, the electrical signal may be in the range of about 1 mV to about 20 V, about 1 mV to about 10 V, about 1 mV to about 5 V, about 1 mV to about 1 V, about 1 mV to about 500 mV, mV to about 100 mV, or from about 1 mV to about 50 mV, or the electrical signal may range from about 1 nA to about 1 A, from about 1 nA to about 100 mA, from about 1 nA to about 10 mA, About 100 nA to about 100 A, about 1 nA to about 1 A, about 1 nA to about 100 nA, about 100 nA to about 1 A, about 100 nA to about 10 mA, about 100 nA to about 100 A, about 100 from about 1 μA to about 100 μA, from about 1 μA to about 1 A, from about 1 μA to about 100 mA, from about 1 μA to about 10 mA, from about 1 μA to about 100 μA, from about 100 μA to about 1 A, About 100 mA, about 100 A to about 10 mA, or about 10 mA to about 1A.

For example, the electrical signal may be from about 1 ns to about 1 ms, from about 1 ns to about 100 μs, from about 1 ns to about 10 μs, from about 1 ns to about 1 μs, from about 1 ns to about 100 ns, from about 10 ns to about 1 ns, from about 10 ns to about 100 ns, from about 10 ns to about 100 ns, from about 10 ns to about 10 μs, from about 10 ns to about 1 μs, from about 10 ns to about 100 ns, About 1 ms to about 1 ms, from about 1 ms to about 100 ms, from about 1 ms to about 10 ms, from about 100 ms to about 100 ms, from about 100 ms to about 10 ms, from about 100 ms to about 1 ms, , about 10 μs to about 1 ms, about 10 μs to about 100 μs, or about 100 μs to about 1 ms.

A fourth aspect of the invention provides a method of forming a layer of a phase change material, Forming a separation membrane in the layer of the phase change material film; And forming a layer of a phase change material layer on the separation layer, the method comprising the steps of: forming a separation layer between the layers of the phase change material layer Wherein the separation membrane prevents element movement between the layers of the phase change material film and the separation membrane comprises a fertile side material.

In one embodiment of the present invention, each layer of the phase change material layer and the separation layer may be formed by physical vapor deposition, chemical vapor deposition (CVD), and / or atomic layer deposition (ALD) But may not be limited thereto.

In one embodiment of the present invention, the physical vapor deposition may include evaporation, sputtering, or pulsed laser deposition. The chemical vapor deposition may be performed by a low pressure chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method, a metal organic chemical vapor deposition method, Plasma enhanced chemical vapor deposition, plasma enhanced chemical vapor deposition, or inductively coupled plasma deposition.

In one embodiment of the present invention, the atomic layer deposition (ALD) method has excellent coverage and can control the thickness in atomic layer units. When used in combination with CVD, the ALD can stably embed holes of a substrate having fine diameters and holes can do.

In one embodiment of the present invention, the formation temperature of each layer of the phase change material layer and the separation layer may be in the range of room temperature to about 400 ° C, but may not be limited thereto. For example, each of the layers of the phase change material layer and the separation layer may be formed to a thickness of from about room temperature to about 400 DEG C, from about 100 DEG C to about 400 DEG C, from about 200 DEG C to about 400 DEG C, from about 300 DEG C to about 400 DEG C, , About 100 ° C to about 300 ° C, about 200 ° C to about 300 ° C, room temperature to about 200 ° C, or about 100 ° C to about 200 ° C.

In one embodiment of the present invention, the phase change temperatures of the respective layers of the phase change material layer may be the same or different from each other, but the present invention is not limited thereto.

In one embodiment herein, each layer of the phase change material layer comprises an ABC phase change material, where A is at least one of the group comprising Ge, Sn, Si, In, Al, Ag, B is selected from the group comprising Sb, As, Bi, and P, and C may be selected from the group including S, Se, and Te, but it is not limited thereto.

In one embodiment of the present invention, each layer of the phase change material layer may be doped after forming the A-B-C phase change material layer, but may not be limited thereto. For example, the doping may include, but is not limited to, N-, C-, or Si-doping.

In one embodiment, the phase change material layer may be prepared by first depositing an AB phase change material layer followed by chalcogenination of the AB phase change material layer, and using this method, The composition of the material film can be controlled differently, but is not limited thereto. Specifically, the method comprises: forming an A-B film; And forming the ABC phase change material film by chalcogenating the AB film by annealing the AB film in a gaseous atmosphere containing a chalcogen element C-containing precursor, wherein A is Ge, Sn, Si, In, Al, or Ga, and B may include Sb, As, Bi, or P.

In one embodiment of the present invention, forming the A-B film may be performed at a temperature ranging from about 80 캜 to about 300 캜, but may not be limited thereto. For example, the forming of the AB film may be performed at a temperature of about 80 캜 to about 300 캜, about 80 캜 to about 250 캜, about 80 캜 to about 200 캜, about 80 캜 to about 180 캜, From about 150 캜 to about 300 캜, from about 150 캜 to about 250 캜, from about 150 캜 to about 200 캜, from about 150 캜 to about 180 캜, from about 180 캜 to about 300 캜, At a temperature of from about 200 DEG C to about 200 DEG C, from about 200 DEG C to about 300 DEG C, from about 200 DEG C to about 250 DEG C, or from about 250 DEG C to about 300 DEG C, but the present invention is not limited thereto.

In one embodiment of the invention, the chalcogen element C may comprise S, Se, or Te.

In one embodiment herein, the chalcogen element C-containing precursor is a substituent selected from the group consisting of hydrogen, an alkyl group, an amine group, an alkylamine group, an alkoxy group, a silyl group, a germyl group, But is not limited thereto.

Examples of the precursor containing C- chalcogen _{element, H 2 S, H 2 Te} , H 2 Se, Te- (CH 3) 2, Te- (C 2 H 5) 2, Te- (i C 3 H ^{_{7) 2, Te- (t C}} 4 H 9) 2, Te- [N- (CH 3) 2] 2, Te- [N- (C 2 H 5) 2] 2, Te- [N- (i _{C 3 H 7) 2] 2} , Te- (O-CH 3) 2, Te (OC 2 H 5) 2, Te [O- (i C 3 H 7)] 2, Te- [Si- (CH 3 _{) - 3] 2, Te- [} Si- (C 2 H 5) - 3] 2, Te- [Si- (i C 3 H 7) - 3] 2, Te- (Si- [N- (CH 3 _{) 2] 3) 2, Te-} (Si- [N- (C 2 H 5) 2] - 3) 2, Te- [Ge- (CH 3) - 3] 2, Te- [Ge- (C 2 _{H 5) - 3] 2,} Te- (Ge- [N- (CH 3) 2] 3) 2, Te- (Ge- [N- (C 2 H 5) 2] - 3) 2, Se- ( _{CH 3) 2, Se- (C} 2 H 5) 2, Se- (i C 3 H 7) 2, Se- (t C 4 H 9) 2, Se- [N- (CH 3) 2] 2, _{Se [N- (C 2 H 5} ) 2] 2, Se- [N- (i C 3 H 7) 2] 2, Se- (O-CH 3) 2, Se- (OC 2 H 5) 2, _{^{Se- [O- (i C 3 H}} 7)] 2, Se- [Si- (CH 3) - 3] 2, Se- [Si- (C 2 H 5) - 3] 2, Se- [Si- ^{_{(i C 3 H 7) -}} 3] 2, Se- (Si- [N- (CH 3) 2] 3) 2, Se- (Si- [N- (C 2 H 5) 2] - 3) 2 _{, Se- [Ge- (CH 3)} - 3] 2, Se- [Ge- (C 2 H 5) - 3] 2, Se- (Ge- [N- (CH 3) 2] 3) 2, It is _{Se- (Ge- [N- (C 2} H 5) 2] - 3) may be of any _two, etc., but may not be limited thereto.

In one embodiment herein, the gas atmosphere comprising the chalcogen element C-containing precursor may be formed in a pressure range of from about 0.001 Torr to about 760 Torr, but may not be limited thereto. For example, the gas atmosphere comprising the chalcogen element C-containing precursor may be from about 0.001 Torr to about 760 Torr, from about 0.01 Torr to about 760 Torr, from about 0.1 Torr to about 760 Torr, from about 1 Torr to about 760 Torr, From about 300 Torr to about 760 Torr, from about 500 Torr to about 760 Torr, from about 0.001 Torr to about 500 Torr, from about 0.01 Torr to about 500 Torr, from about 0.1 Torr to about 500 Torr, from about 100 Torr to about 760 Torr, From about 100 Torr to about 500 Torr, from about 300 Torr to about 500 Torr, from about 0.001 Torr to about 300 Torr, from about 0.01 Torr to about 300 Torr, from about 0.1 Torr to about 300 Torr, About 300 Torr, about 100 Torr to about 300 Torr, about 0.001 Torr to about 100 Torr, about 0.01 Torr to about 100 Torr, about 0.1 Torr to about 100 Torr, or about 1 Torr to about 100 Torr But may not be limited thereto.

In one embodiment of the invention, the gas comprising the chalcogen element C-containing precursor may be, but not limited to, an inert gas, such as argon or helium gas, or N ₂ .

In one embodiment herein, the partial pressure of the chalcogen element C-containing precursor in the gas comprising the chalcogen element C-containing precursor may be from about 0.001 Torr to about 100 Torr, but may not be limited thereto . For example, the partial pressure of the chalcogen element C-containing precursor in the gas comprising the chalcogen element C-containing precursor may range from about 0.001 Torr to about 100 Torr, from about 0.001 Torr to about 50 Torr, from about 0.001 Torr to about 30 Torr From about 0.01 Torr to about 50 Torr, from about 0.01 Torr to about 30 Torr, from about 0.001 Torr to about 10 Torr, from about 0.001 Torr to about 1 Torr, from about 0.001 Torr to about 0.1 Torr, From about 1 Torr to about 10 Torr, from about 0.01 Torr to about 1 Torr, from about 1 Torr to about 100 Torr, from about 1 Torr to about 50 Torr, from about 1 Torr to about 30 Torr, from about 1 Torr to about 10 Torr, From about 10 Torr to about 50 Torr, from about 10 Torr to about 50 Torr, from about 10 Torr to about 30 Torr, from about 30 Torr to about 100 Torr, from about 30 Torr to about 50 Torr, or from 50 Torr to about 100 Torr, But may not be limited thereto.

In one embodiment herein, the annealing may be to chalcogenide the formed AB film by annealing at a temperature equal to or higher than the deposition temperature under a gaseous atmosphere comprising a chalcogen element-containing precursor, But may be performed in a temperature range of from about 100 DEG C to about 500 DEG C, but is not limited thereto. For example, the annealing may be performed at a temperature from about 100 캜 to about 500 캜, from about 100 캜 to about 400 캜, from about 100 캜 to about 300 캜, from about 100 캜 to about 200 캜, About 200 ° C to about 400 ° C, about 200 ° C to about 500 ° C, about 300 ° C to about 400 ° C, about 150 ° C to about 300 ° C, about 150 ° C to about 200 ° C, 500 C, from about 300 C to about 400 C, or from about 400 C to about 500 C, although the present invention is not limited thereto.

In one embodiment of the present invention, the phase change may occur in the AB film due to the annealing, and since the volume of the AB film expands as the chalcogen element permeates into the AB film in the chalcogenination, the amorphous AB film However, the present invention is not limited to this, but it is possible to suppress void formation which may be caused by the volume reduction phenomenon in the case of crystallization.

In an embodiment of the present invention, the entire or upper portion of the A-B film may be chalcogeninated by the annealing to form and crystallize the A-B-C phase change material film. However, the present invention is not limited thereto. Further, by the annealing, impurities of the A-B-C phase change material film can be removed and densified. The crystal structure formed according to the crystallization may include, but not limited to, a hexagonal or a face centered cubic crystal structure. In particular, the hexagonal crystal structure may be a The structure may be the most thermodynamically stable structure with respect to the ABC phase change material film, but may not be limited thereto.

In one embodiment herein, the formation of the AB film is by direct chemical reaction between the A-containing precursor and the B-containing precursor, or by reduction of the A-containing precursor and reduction of the B-containing precursor, or By the thermal decomposition of the A-containing precursor and the thermal decomposition of the B-containing precursor, or a combination thereof, and the reaction may be repeated, but it may not be limited thereto. For example, the direct chemical reaction between the A-containing precursor and the B-containing precursor may be one in which the A-containing precursor and the B-containing precursor are sequentially injected alternately by atomic vapor deposition, And the reduction of the B-containing precursor may be one in which the reducing agent is injected after the deposition of the A-containing precursor by the atomic vapor deposition method and the reducing agent is injected after the deposition of the B-containing precursor in turn. The pyrolysis and pyrolysis of the B-containing precursor may be by alternately injecting the A-containing precursor and the B-containing precursor alternately by chemical vapor deposition, but the present invention is not limited thereto.

In still another embodiment of the present invention, among the precursors used for forming the AB film, the A-containing precursor is at least one selected from the group consisting of cyclopentadienyl (Cp), alkyl group, amine group, alkylamine group, alkoxy group, halide, And combinations thereof, wherein the B-containing precursor may comprise a substituent selected from Si-containing substituents, Ge-containing substituents, and combinations thereof, .

In one embodiment of the invention, the A- containing precursor _{ACp n, AR n, AH n} R 4 -n, A (NR 2) - n, A (OR) - n, AX n, AH n X 4 - _{n, n} AX - dioxane (1,4-dioxane), and include those selected from the group consisting of the combinations thereof and (X being halogen), and the B- containing precursor B- (SiR _{3) m,} B - [Si (NR ₂ ) ₃ ] _m , B- (GeR ₃ ) _m , B- [Ge (NR ₂ ) ₃ ] _m and combinations thereof, Each independently include an alkyl group having 1 to 6 carbon atoms or all possible isomers thereof, and n and m are each independently an integer of 1 to 4, but may not be limited thereto.

For example, the A- containing precursor _{GeCp 2, GeR 4, GeH y} R 4 -y, Ge (NR 2) - 4, Ge (OR) - 4, GeX 4, GeH y X 4-y, GeX 2 Dioxane, and combinations thereof. More specifically, the A-containing precursor is selected from the group consisting of GeCp ₂ , Ge (CH ₃ ) ₄ , Ge _{(C 2 H 5) - 4} , Ge (i C 3 H 7) - 4, Ge [N- (CH 3) 2] 4, Ge [N- (C 2 H 5) 2] 4, Ge (O- _{CH 3) 4, Ge (OC} 2 H 5) 4, Ge (O- (i C 3 H 7) 4), GeCl 2 - dioxane, GeCl _4, or GeF ₄ And the like, but the present invention is not limited thereto. Here, each of Rs independently includes an alkyl group having 1 to 6 carbon atoms or all possible isomers thereof, and y may be an integer of 1 to 4, but it is not limited thereto.

For example, the B- containing precursor _{Sb- [Si- (CH 3) -} 3] 3, Sb- [Si- (C 2 H 5) - 3] 3, Sb- [Si- (i C 3 H _{7) - 3] 3, Sb-} (Si- [N- (CH 3) 2] 3) 3, Sb- (Si- [N- (C 2 H 5) 2] - 3) 3, Sb- [Ge _{- (CH 3) - 3]} 3, Sb- [Ge- (C 2 H 5) - 3] 3, Sb- (Ge- [N- (CH 3) 2] 3) 3, or Sb- (Ge- [N- (C ₂ H ₅ ) ₂ ] - ₃ ) ₃ , and the like.

In one embodiment herein, the precursors comprising a plurality of alkyl groups may each be the same or different.

In an embodiment of the present invention, the A-B-C phase change material film prepared by the method for producing an A-B-C phase change material film may be formed on a substrate or a surface having fine steps formed thereon, but the present invention is not limited thereto.

According to one embodiment of the present invention, the step of forming the AB film may include adjusting the composition of the AB film according to the types of the A raw material gas and the B raw material gas, the partial pressure, the supply time, the substrate temperature, And the composition of the ABC phase change material layer is controlled according to the kind of the C raw material gas in the chalcogenination process, the partial pressure, the supply time, the substrate temperature, the number of cycles of the C raw material gas supply and the purge step But may not be limited thereto.

In one embodiment of the invention, the thickness of each layer of the phase change material layer may be the same or different from each other, and the thickness of each phase change layer is not particularly limited and may be selected by the designer It can be changed freely.

In one embodiment of the invention, the thickness of each phase-change material layer may be independently from about 0.1 nm to about 50 nm, but is not limited thereto. For example, the thickness of each layer of the phase change material film may range from about 0.1 nm to about 50 nm, from about 1 nm to about 50 nm, from about 10 nm to about 50 nm, from about 20 nm to about 50 nm, From about 1 nm to about 40 nm, from about 10 nm to about 40 nm, from about 20 nm to about 40 nm, from about 30 nm to about 40 nm, from about 40 nm to about 50 nm, from about 0.1 nm to about 40 nm, from about 1 nm to about 20 nm, from about 0.1 nm to about 20 nm, from about 0.1 nm to about 30 nm, from about 1 nm to about 30 nm, from about 10 nm to about 30 nm, from about 20 nm to about 30 nm, But is not limited to, about 10 nm to about 20 nm, about 0.1 nm to about 10 nm, about 1 nm to about 10 nm, or about 0.1 nm to about 1 nm.

In one embodiment of the present invention, the oxide-based material contained in the separator may be selected from the group consisting of Ti, Ta, W, Hf, Zr, Ru, Mo, Co, Ni, Mn and their nitrides or chalcogen compounds , Carbon-based materials, SiN, SiC, SiCN, AlN, boron nitride (BN), and carbon nitride (CN). The carbon-based material may include, but is not limited to, carbon, CNT, graphene, and the like. The chalcogen compound may be any of those known in the art without any particular limitation. For example, a transition metal chalcogenide (TMDC) may be used. Specifically, MoS ₂ , WS ₂ , MoSe ₂ , WSe ₂ , MoTe _2, or transition metal chalcogen compounds of MoSe ₂ may be used, but are not limited thereto.

The spacing of the separation membranes is determined by the thickness of the deposited phase change material, and the thickness of the separation membranes can be freely changed by the designer depending on the phase change characteristics.

In one embodiment of the present invention, the separation layer prevents element movement between the layers of the phase change material layer. The separation layer includes an electrically conductive material or non-conductive material as the non-oxide side material, and the insulating layer may be omitted. This is because the oxygen component included in the insulating film may adversely affect the memory element. In one embodiment of the present invention, the thicknesses of the separation membrane layers may be the same or different from each other, and the thickness of each separation membrane layer is not particularly limited and may be freely changed by a designer for manufacturing a desired phase change material membrane have.

In one embodiment of the present invention, the thickness of each of the separation membrane layers may independently be about 0.1 nm to about 10 nm, but is not limited thereto. For example, the thickness of each layer of the separation membrane can be from about 0.1 nm to about 10 nm, from about 0.1 nm to about 5 nm, from about 0.1 nm to about 3 nm, from about 0.1 nm to about 1 nm, from about 1 nm to about 10 nm , From about 1 nm to about 5 nm, or from about 1 nm to about 3 nm, but is not limited thereto.

In one embodiment of the present invention, the thickness of each phase-change material layer and the thickness of each separation layer may be the same or different, and the thickness is not particularly limited. For example, in the case of three layers of phase change material and two layers of the above separation membrane, the separation membrane thickness between the phase change material layer 1 and the phase change material layer 2 is about 2 nm, the phase change material layer 2, The membrane thickness between membrane 3 may be about 5 nm, but is not limited thereto.

In one embodiment, the phase change temperature of each layer of the phase change material layer may range from about 100 ° C to about 500 ° C, but is not limited thereto. For example, the phase change temperature of each layer of the phase change material layer can be in the range of about 100 캜 to about 500 캜, about 200 캜 to about 500 캜, about 300 캜 to about 500 캜, about 400 캜 to about 500 캜, About 300 DEG C to about 400 DEG C, about 200 DEG C to about 400 DEG C, about 300 DEG C to about 400 DEG C, about 100 DEG C to about 300 DEG C, about 200 DEG C to about 300 DEG C, or about 100 DEG C to about 200 DEG C However, the present invention is not limited thereto.

In one embodiment of the present invention, the phase change temperature of each layer of the phase change material layer may be controlled according to the composition of each layer of the phase change material layer, but may not be limited thereto.

Hereinafter, embodiments of the multi-layered phase-change material film and the memory device including the same will be described with reference to the drawings.

Referring to FIG. 1, a conventional multi-layered phase change memory device (FIG. 1 (a)) without a separator is shown in FIG. 1 as having a crystalline / amorphous material with an electric pulse applied during a set / The phase change material atoms are diffused by the applied current, and the phase change material film layers of different compositions are gradually mixed into one composition. As shown in FIG. 1 (b) The new phase change material 3 starts to be formed at the portion where the first phase change material 1 and the second phase change material contact with each other. Thereafter, as shown in FIG. 1 (c), if the composition is mixed to form one phase-change material 3, the advantage of multi-level coding is lost and consequently the same characteristics as those of a device using a single phase- Or the end of cell life.

However, the phase-change memory device of FIG. 2 manufactured according to one embodiment of the present invention has a repetitive set by inserting the separator S1 and S2 between the multi-layered phase change material layers M1, M2 and M3 of different compositions It is possible to prevent the composition of the phase change material layers from being mixed with each other and to maintain the state of the multi-layered phase change material film 40 having multi-level characteristics. The multi-layered phase-change material film may be formed by a physical vapor deposition method, a chemical-buck vapor deposition method, or an atomic layer deposition method. And is not limited thereto.

3 shows two structures of a multi-layered phase change material film according to an embodiment of the present invention applied to a confined structure, in which a multi-layered phase change material and a separating film are formed in a confined structure with different composition of each layer. The structure film grown by the conventional atomic layer deposition method is shown in FIG. 3 (a), and a multi-layered phase change material film structure deposited by selective growth in a hole formed on a substrate according to an embodiment of the present invention is shown in FIG. 3 b.

The embodiment of FIG. 2 or 3 (b) comprises a multi-layered phase change material film comprising three different phase change material layers M1, M2, M3 and two separating films S1, S2 therebetween .

For example, three different phase change material layers M1, M2, and M3 may satisfy the properties of amorphous state resistors R _a and crystallization temperatures T _{c as} shown in Equations 1 and 2 below, , But are not limited to:

(Formula 1) R _a ^M1 <R _a ^M2 <R _a ^M3 ;

(Equation 2) _Tc ^M1 > _Tc ^M2 > _Tc ^M3 .

In the above formula 2, T (T _c ^M1 - T _c ^M2 or T _c ^M2 - T _c ^M3 ) is from about 10 ° C to about 50 ° C. For example, the crystallization of each layer of the phase change material may occur sequentially, but not exclusively, at about 100 캜, about 120 캜, and about 140 캜.

For example, the phase change material 1 (M1) is GCT (GeCuTe, for example, Ge ₁ Cu ₂ Te ₃ ), and the phase change material 2 (M2) is SST (SiSbTe, for example, _{Si 3. 9 Sb 45. 6} Te 50. 5) , and the phase change material 3 (M3) is may be a GST (GeSbTe, for example, Ge ₂ Sb ₂ Te _5), limited to It does not.

Alternatively, the phase change material layer may be prepared by first depositing an AB phase change material layer and then chalcogenide the AB phase change material layer. By using this method, the composition of the phase change material layer of each layer may be adjusted differently .

A heater may be disposed between the phase change material layer M1 and the first electrode. The heater may be a conductive layer such as a Pt layer, a W layer, a Ti layer, an Al layer, a TiN layer, a TaN layer, Or a Ni film, but the present invention is not limited thereto. The separator may be made of at least one selected from the group consisting of Ti, Ta, W, Hf, Zr, Ru, Mo, Co, Ni, Mn and nitride or chalcogen compounds thereof, , SiCN, AlN, boron nitride (BN), and carbon nitride (CN), but the present invention is not limited thereto. The carbon-based material may include, but is not limited to, carbon, CNT, or graphene. The chalcogen compound may be any of those known in the art without any particular limitation. For example, a transition metal chalcogenide (TMDC) may be used. Specifically, MoS ₂ , WS ₂ , MoSe ₂ , WSe ₂ , MoTe _2, or transition metal chalcogen compounds of MoSe ₂ may be used, but are not limited thereto.

FIG. 4 is a graph showing a change in resistance of a multilayered phase change material film including (a) a conventional single layer phase change material film and (b) a separation film according to an embodiment of the present invention, wherein And the set / reset behavior of FIG. When multi-layered phase-change materials having different compositions are stacked, multi-coding is possible because they have different phase-change (crystallization) temperatures for each layer as shown in Fig. 4 (b). Specifically, Fig. 4 (b) shows the phase change temperature and resistance relationship of the memory device including the three phase change material layers M1, M2 and M3, and the amorphous state resistors (R _a ) and crystallization temperatures (T _c ).

The phase change material layer is crystallized (set) or amorphized (reset) by the current applied to the electrodes of the memory element. At this time, the temperature of the phase change material can be controlled according to the magnitude and duration of the applied current. FIG. 4A is a diagram illustrating a resistance change according to a temperature of a conventional single phase change memory device. Since it is composed of a single phase change material, data can be recorded only in two states, 1 or 0. FIG. 4 (b) shows the change in resistance of the memory device having the multi-layer characteristics by depositing the multilayer phase change material according to the present invention. Figure 4 (b) has a phase change material M _1, M _2, M ₃ are laminated in turn, and their phase transition temperature T _c is T _c ^{M1> M2} T _c> T _c ^M3 The change in resistance at the time when the current is applied is schematized. The crystallization of the phase change material M _1, M _2, M ₃ resistance was represented by each of R _c ^{M3, M2} R _c, R _c ^M1. The phase change material M _1, M _2, data of when the M ₃ crystallized from data D _11, over a temperature of T _c ^M3 when the all of the amorphous state by using the M ₃ each different from the phase transition temperature of D _{- 10} and T _c ^M2 , data at the time of crystallization of M ₂ can be represented by D ₀₁ , and data at the time of crystallization of M ₁ at temperature above T _c ^M1 can be represented by D ₀₀ . R ¹ , R ² , and R ³ in the vertical axis of FIG. 4 (b) represent the total resistance due to the stacking of the phase change material layers.

FIG. 5 is a graph showing the change in resistivity with temperature of various phase change material thin films (thickness: 50 nm) that can be used in the manufacture of a memory device including a multi-layered phase change material film including a separation film according to an embodiment of the present invention [Reference: S. Raoux et al., J. Appl. Phys. 102, 094305 (2007)), and arrows in Fig. 5 indicate the directions of temperature rise and cooling. As shown in the figure, the data (1 or 0) can be coded by the resistance of a phase change material such as GST (Ge ₂ Sb ₂ Te ₅ ) whose resistance between the amorphous phase and the crystalline phase changes by more than 4 orders , And memory states can be reversibly switched using fast electrical pulses (< 10 ns) in memory devices fabricated using such phase change materials.

Therefore, the multi-layered phase-change material film according to an embodiment of the present invention includes a separation membrane including a high-conductivity material or a non-oxide conductive material between various phase-change material films, It is possible to prevent the movement of the interlayer elements by the separation membrane and to prevent the composition of the upper layer and the lower layer from being mixed, thereby maintaining the multi-level characteristic.

In addition, when the multi-layered phase-change material layer according to an embodiment of the present invention includes a multi-layered phase-change material layer having a different composition, multi-coding can be performed by having different crystallization temperatures for each layer.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be interpreted as being included in the scope of the present invention .

10: substrate 20: heater 30: first electrode
40, 41: multilayer phase change material film 50: second electrode
S, S1, S2: separator
M1, M2, M3: a phase change material or phase change material layer

Claims (23)

A plurality of layers of a phase change material film; And
The separation membrane formed between each layer of the phase change material film
A multi-layered phase change material film,
Wherein the separation membrane prevents element movement between the layers of the phase change material film, the separation membrane comprising a fertile side material,
Wherein each layer of the phase change material layer comprises an ABC phase change material,
Wherein each layer of the phase change material layer is formed by:
Forming an AB film; And
Containing ABC film by forming a chalcogen-containing ABC film by chalcogenating the AB film by annealing the AB film formed in a gas atmosphere containing a chalcogen element C-containing precursor,
Here, A is at least one selected from the group consisting of Ge, Sn, Si, In, Al, Ag, and Ga,
B is selected from the group comprising Sb, As, Bi, and P,
C is selected from the group comprising S, Se, and Te,
Wherein the composition of each layer of the phase change material film is different and the phase change temperatures are different from each other,
Multilayer phase change material film.
delete delete The method according to claim 1,
Wherein the separation layer is formed of a material selected from the group consisting of Ti, Ta, W, Hf, Zr, Ru, Mo, Co, Ni, Mn and a nitride or chalcogenide thereof, a carbonaceous material, SiN, SiC, SiCN, AlN, boron nitride (BN), and carbon nitride (CN).
The method according to claim 1,
Wherein the phase change temperature of each layer of the phase change material film is in the range of 100 ° C to 500 ° C.
The method according to claim 1,
Wherein a phase change temperature of each layer of the phase change material film is adjusted according to a composition of each layer of the phase change material film.
A first electrode;
A multilayered phase change material film according to any one of claims 1 to 4 formed on the first electrode; And
The second electrode formed on the multi-
/ RTI &gt;
8. The method of claim 7,
Wherein the phase change memory element comprises the multi-layered phase change material film to implement multi-level coding.
8. The method of claim 7,
And a heater positioned between the first electrode and the multi-layered phase change material film.
10. The method of claim 9,
And a heater positioned between the second electrode and the multi-layered phase change material film.
8. The method of claim 7,
Wherein each layer of the multi-layer phase change material film is phase-changed by an electrical signal.
A first electrode formed on a portion of a substrate;
An insulating layer formed on the substrate on which the first electrode is formed and including a hole exposing the first electrode;
A multilayered phase change material film according to any one of claims 1 to 4 formed on the exposed first electrode in the hole; And
The second electrode formed on the multi-
/ RTI &gt;
13. The method of claim 12,
Wherein the phase change memory element comprises the multi-layered phase change material film to implement multi-level coding.
13. The method of claim 12,
And a heater positioned between the first electrode and the multi-layered phase change material film.
15. The method of claim 14,
And a heater positioned between the second electrode and the multi-layered phase change material film.
13. The method of claim 12,
Wherein each layer of the multi-layer phase change material film is phase-changed by an electrical signal.
Forming a layer of a phase change material film;
Forming a separation membrane in the layer of the phase change material film; And
Forming a layer of phase change material film on the separation membrane
To be repeated one or more times
A method of making a multilayered phase change material film,
Wherein the multilayered phase change material film includes a separation film formed between respective layers of the phase change material film,
Wherein the separation membrane prevents element movement between the layers of the phase change material film, the separation membrane comprising a fertile side material,
Wherein each layer of the phase change material layer comprises an ABC phase change material,
Wherein each layer of the phase change material layer is formed by:
Forming an AB film; And
Containing ABC film by forming a chalcogen-containing ABC film by chalcogenating the AB film by annealing the AB film formed in a gas atmosphere containing a chalcogen element C-containing precursor,
Here, A is at least one selected from the group consisting of Ge, Sn, Si, In, Al, Ag, and Ga,
B is selected from the group comprising Sb, As, Bi, and P,
C is selected from the group comprising S, Se, and Te,
Wherein the composition of each layer of the phase change material film is different and the phase change temperatures are different from each other,
A method for producing a multilayered phase change material film.
18. The method of claim 17,
The method according to any one of claims 1 to 4, wherein the formation of each layer of the phase change material layer and the separation layer is performed by physical vapor deposition, chemical vapor deposition, or atomic layer deposition. A method for producing a multilayered phase change material film.
delete delete 18. The method of claim 17,
The nitride-based material may be selected from the group consisting of Ti, Ta, W, Hf, Zr, Ru, Mo, Co, Ni, Mn and nitride or chalcogen compounds thereof, SiN, SiC , SiCN, AlN, boron nitride (BN), and carbon nitride (CN).
18. The method of claim 17,
Wherein the phase change temperature of each layer of the phase change material film is in the range of 100 ° C to 500 ° C.
18. The method of claim 17,
Wherein the phase change temperature of each layer of the phase change material film is adjusted according to the composition of each layer of the phase change material film.

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