KR101772663B1 - Apparatus and method for cerebral nerve stimulus using microwave signal - Google Patents

Apparatus and method for cerebral nerve stimulus using microwave signal Download PDF

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KR101772663B1
KR101772663B1 KR1020160028266A KR20160028266A KR101772663B1 KR 101772663 B1 KR101772663 B1 KR 101772663B1 KR 1020160028266 A KR1020160028266 A KR 1020160028266A KR 20160028266 A KR20160028266 A KR 20160028266A KR 101772663 B1 KR101772663 B1 KR 101772663B1
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signal
applicator
impedance
frequency signal
output
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KR1020160028266A
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Korean (ko)
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권영우
서태윤
조제원
박미정
정다희
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서울대학교산학협력단
한국과학기술연구원
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Priority to KR1020160028266A priority Critical patent/KR101772663B1/en
Priority to CN201680083282.3A priority patent/CN108697891B/en
Priority to PCT/KR2016/012882 priority patent/WO2017155180A1/en
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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/18—Applying electric currents by contact electrodes
    • A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
    • A61N1/36014—External stimulators, e.g. with patch electrodes
    • A61N1/36025—External stimulators, e.g. with patch electrodes for treating a mental or cerebral condition
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/02—Details
    • A61N1/04—Electrodes
    • A61N1/06—Electrodes for high-frequency therapy
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/02—Details
    • A61N1/08—Arrangements or circuits for monitoring, protecting, controlling or indicating
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/18—Applying electric currents by contact electrodes
    • A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/18—Applying electric currents by contact electrodes
    • A61N1/32—Applying electric currents by contact electrodes alternating or intermittent currents
    • A61N1/36—Applying electric currents by contact electrodes alternating or intermittent currents for stimulation
    • A61N1/3605—Implantable neurostimulators for stimulating central or peripheral nerve system
    • A61N1/3606—Implantable neurostimulators for stimulating central or peripheral nerve system adapted for a particular treatment
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N1/00—Electrotherapy; Circuits therefor
    • A61N1/02—Details
    • A61N1/08—Arrangements or circuits for monitoring, protecting, controlling or indicating
    • A61N2001/083—Monitoring integrity of contacts, e.g. by impedance measurement

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  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Neurology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Electrotherapy Devices (AREA)
  • Magnetic Treatment Devices (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
  • Neurosurgery (AREA)
  • Child & Adolescent Psychology (AREA)
  • Developmental Disabilities (AREA)
  • Hospice & Palliative Care (AREA)
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Abstract

The present invention relates to technology for inducing stimulation of the brain by using an applicator generating an electromagnetic field. Such invention has a control unit which calculates a reflection coefficient of the applicator, and controls an impedance variable state of an impedance variable circuit for impedance matching between the applicator and a power amplifier on the basis of a result of the calculation. Therefore, the present invention adjusts modulation frequencies of microwave signals, which are modified as a square wave supplied to the applicator, to stimulate and inhibit the brain.

Description

TECHNICAL FIELD [0001] The present invention relates to a brain stimulation apparatus and method using a microwave signal,

The present invention relates to a technique for inducing brain stimulation using an applicator for generating an electromagnetic field, and more particularly, to a method for inducing excitation and suppression of a brain by controlling a modulation frequency of a microwave signal modulated in a square wave form supplied to an applicator To an apparatus and method for stimulating a brain using a microwave signal.

Generally The brain stimulation device refers to a device that treats the brain by stimulating the brain nerve by applying a current or a magnetic field to the area to be stimulated. There are a number of brain stimulation methods applied to such brain stimulation devices. As a representative example, deep brain stimulation of an invasive method, stimulation of a transcranial direct current stimulation (tDCS) using a direct current of a noninvasive method and transcranial direct current stimulation (TMS) using a magnetic field : transcranial magnetic stimulation).

Deep brain stimulation is an invasive surgical procedure that penetrates the brain through the surgery and stimulates the deep brain nucleus with a high frequency of 100 to 200 Hz to increase the output of the deep brain nucleus, . It is reported that the peripheral nerve fibers are activated to regulate the whole basal ganglia-sagittal cortex network. However, such deep brain stimulation has a disadvantage in that it is difficult to perform surgery to penetrate the brain into the brain for deep brain stimulation, and thus, various side effects occur.

Noninvasive brain stimulation is a technique to stimulate the nerves of a specific part of the brain without surgical treatment using magnetic fields or currents. The use of transthoracic magnetic stimulation using a magnetic field and transthoracic DC stimulation using a DC current It is used as an enemy.

Cranial magnetic stimulation is a technique that uses a principle that causes depolarization of the nerve as a general electric stimulus after a certain period of time when an electric current generated through a stimulation coil is changed into an electric field of an appropriate intensity in the tissue. This technique has the advantage of more local irritation and less skin irritation than the transthoracic DC stimulation, but it is expensive, difficult to move, and has a lot of noise.

In this study, we measured the resting membrane potential of a neuron by applying a weak DC electric stimulus of 1 ~ 2 mA to two or more electrodes through a noninvasive, This method is based on the principle that the spontaneous discharge rate of the cells and the activation of the N-methyl-D-aspartic acid receptor are changed. Such a technique has advantages such as easy movement of equipment and relatively low cost of equipment, but it is difficult to perform local treatment because of wide spread of stimulus.

As a result, the conventional brain stimulation apparatus has a drawback that it may cause side effects of surgery, consumes a lot of electric power, and suffers from difficulties in local procedures.

A problem to be solved by the present invention is to make a brain stimulation by a non-invasive method using a microwave electromagnetic field.

Another object of the present invention is to enable local site stimulation using a simple structure applicator.

Another problem to be solved by the present invention is to improve the signal transmission efficiency by achieving a desired impedance matching between the power amplifier and the applicator through the impedance variable circuit.

Another problem to be solved by the present invention is to obtain a degree of excitement and suppression to a target level by using a modulation of a microwave signal.

According to another aspect of the present invention, there is provided a brain stimulation apparatus using a microwave signal, including: a signal generator for generating a microwave signal; A signal modulator for modulating the microwave signal into a high frequency signal of a pattern for brain stimulation; A power amplifier for amplifying the high frequency signal to a signal of a size required by the microwave brain stimulation device; A directional coupler for transmitting the high frequency signal output from the power amplifier to the next stage and separating a reflected wave of a high frequency signal received through an output terminal of the high frequency signal received through its input terminal and an output terminal of the directional coupler; An applicator for radiating the high-frequency signal supplied through the directional coupler to a part to be stimulated in the brain of a patient to be treated; An impedance variable circuit for varying an impedance so as to achieve a desired impedance matching between the power amplifier and the applicator; And a controller for controlling an impedance variable state of the impedance variable circuit so that an impedance matching between the applicator and the power amplifier is performed based on a reflection coefficient of the applicator.

According to another aspect of the present invention, there is provided a method of stimulating a brain using a microwave signal, the method comprising: repeating an on-period during which a microwave signal is output and an off- Radiating a high-frequency signal modulated in a shape of a subject to be stimulated in a subject's brain of a patient to be treated; Confirming whether the signal transmission efficiency of the high-frequency signal falls below a predetermined reference value based on the output of the power detector of the brain stimulation apparatus; Measuring a reflection coefficient of the applicator each time the impedance variation of the impedance variable circuit of the brain stimulation device is changed each time the signal transmission efficiency falls below the reference value; Compensating the signal transmission efficiency by controlling a state of the impedance variable circuit so that a target impedance matching is performed according to the measured reflection coefficient; And adjusting the frequency of the high-frequency signal according to an inhibition / excitation effect to be obtained by measuring the potential of the unit cell of the unit cell to be stimulated.

When the microwave brain stimulation apparatus according to the present invention is used, it is possible to obtain excitability and suppression of a desired degree of cranial nerve by controlling the frequency of the high-frequency signal in the form of pulse repetition.

In addition, there is an effect that the reflection coefficient can be measured in real time by measuring only the DC voltage according to the size of the transmission / reception signal without going through the process of complicated signal processing.

Further, by controlling the state of the impedance variable circuit according to the measured reflection coefficient, it is possible to prevent the signal transmission efficiency for brain stimulation from being lowered due to the ratio of the biochemical composition.

In addition, when the microwave brain stimulation apparatus of the present invention is used, it can be implemented with relatively simple circuits, and power of a signal required for brain stimulation can be minimized through efficiency compensation. Accordingly, the miniaturization of the product can be facilitated, the cost can be reduced, and the effect can be widely applied to the brain stimulation application.

1 is a block diagram of a microwave brain stimulation apparatus according to an embodiment of the present invention.
2 is an example of modulation of a microwave signal according to an embodiment of the present invention.
FIG. 3 is a graph showing the potential of a rat mononitic neuron performed using a brain stimulation apparatus according to an embodiment of the present invention.
4 is a flowchart illustrating a process of a microwave brain stimulation method according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram of a brain stimulation apparatus using a microwave signal according to the present invention. As shown in FIG. 1, the brain stimulation apparatus 100 includes a signal generator 110, a signal modulator 120, a power amplifier 130, A combiner 140, an impedance variable circuit 150, an applicator 160, and a controller 170. [

The signal generator 110 generates a microwave signal MS as a stimulus signal of a frequency required by the brain stimulation apparatus 100.

The signal modulator 120 modulates and outputs the microwave signal MS output from the signal generator 110 in a predetermined pattern. There are various ways of modulating the microwave signal MS in the signal modulator 120, and FIG. 2 shows an example of modulation of the microwave signal MS. That is, FIG. 2 shows a pulse width modulated signal (hereinafter, referred to as a 'high frequency signal') in which the ON period T1 in which the microwave signal MS is output and the OFF period T2 in which the microwave signal MS is not output are repeated. (MOD_SIG) " In this case, the modulation type of the high-frequency signal MOD_SIG can be variously changed by adjusting the frequency (repetition frequency) of the high-frequency signal MOD_SIG. In order to perform the signal modulation function, the signal modulator 120 may be implemented as a switch using transistors.

The power amplifier 130 amplifies the high frequency signal MOD_SIG output from the signal modulator 120 to a signal of a size required by the brain stimulation apparatus 100 and outputs the amplified signal.

The directional coupler 140 transmits the high frequency signal MOD_SIG output from the power amplifier 130 to the impedance variable circuit 150 at the next stage. The directional coupler 140 receives the input signal of the high frequency signal MOD_SIG received from the output terminal of the power amplifier 130 and the high frequency signal MOD_SIG received from the input terminal of the impedance variable circuit 150, (MOD_SIG). To this end, the directional coupler 140 basically includes a transmission line, a device such as a capacitor and an inductor, and may include a circulator using a magnetic material.

The impedance variable circuit 150 is controlled by the controller 170 so that the target impedance matching between the power amplifier 130 and the applicator 160 is performed. To this end, the impedance variable circuit 150 includes elements such as a transistor, a diode, and a switch to vary the impedance of the applicator 160 in contact with a region to be treated of the brain. The impedance variable circuit 150 may be implemented in various forms. For example, the impedance variable circuit 150 may include an impedance tuner, a phase shifter, and two ports, thereby varying the output impedance to various values.

The applicator 160 radiates the high frequency signal MOD_SIG supplied through the impedance variable circuit 150 to a part of the subject's brain to be stimulated. Accordingly, the energy of the radiated high frequency signal (MOD_SIG) causes electrical stimulation to the brain tissue of the stimulation target region. The structure of the applicator 160 is not particularly limited and may include any structure suitable for transmitting the high-frequency signal MOD_SIG to the treatment site more efficiently, including a structure easy to contact with the region to be stimulated . At this time, the practitioner can appropriately adjust the frequency of the high-frequency signal MOD_SIG emitted from the applicator 160 to the portion to be stimulated, so that the degree of the electric stimulation applied to the brain tissue of the portion to be stimulated can be adjusted as desired. As an example of a structure that is easy to contact with the part to be stimulated, there is a structure having a plane-shaped opening surface.

The control unit 170 calculates the reflection coefficient of the applicator 160 and controls the impedance of the impedance variable circuit 150 so that the impedance matching between the applicator 160 and the power amplifier 130 is performed based on the calculation result. And controls the variable state.

The control unit 170 includes an input terminal power detector 171A, an output terminal power detector 171B, an analog-to-digital converter 172, an arithmetic unit 173, and a control unit 174.

The input stage power detector 171A receives an incident wave of the high frequency signal MOD_SIG separated from the directional coupler 140 and outputs a DC voltage corresponding to the amount of the incident wave.

The output stage power detector 171B receives the reflected wave of the high frequency signal MOD_SIG separated from the directional coupler 140 and outputs a DC voltage corresponding to the amount of the reflected wave.

The analog-to-digital converter 172 converts the analog DC voltage signals supplied from the input-stage power detector 171A and the output-stage power detector 171B into digital direct-current voltage signals and outputs them.

The computing device 173 stores the digital signals converted by the analog-to-digital converter 172 and computes the reflection coefficient of the applicator 160 from the stored digital signals. To this end, the computing device 173 may include a DSP (Digital Signal Processor), a PC (Personal Computer), or an electronic computing device.

The control device 174 controls the impedance of the impedance variable circuit 150 to match the impedance between the applicator 160 and the power amplifier 130 according to the reflection coefficient of the applicator 160 calculated by the calculation device 173. [ And controls the variable state. To this end, the controller 174 provides digital or analog control signals to the impedance variable circuit 150.

FIG. 3 is a graph illustrating a result of measurement of the potential of a rat mononuclear neuron performed using the microwave brain stimulation apparatus 100 according to a preferred embodiment of the present invention. It can be confirmed that the brain stimulation is accurately performed using the brain stimulation apparatus 100 according to the present invention.

Meanwhile, a process of maintaining a constant signal transmission efficiency by using an impedance variable circuit during brain stimulation according to an embodiment of the present invention will be described with reference to FIG.

When the power of the brain stimulation apparatus is turned on, a microwave signal is generated in the brain stimulation apparatus, and the microwave signal is modulated in such a manner that an on interval in which a microwave signal is output and an off interval in which a microwave signal is not output are repeated. A signal (hereinafter, referred to as a "high frequency signal") is emitted to the stimulation target site of the subject's subject (or the subject's rat) (S1-S3).

At this time, when the high-frequency signal is radiated to the stimulation target region of the brain of the patient to be treated, the signal transmission efficiency through the applicator is different according to the biological tissue impedance of the patient.

In view of this, the output of the power detector is continuously monitored to determine whether the signal transmission efficiency falls below a predetermined reference value based on the monitoring result (S4-S5).

If it is determined that the signal transmission efficiency has fallen below a preset reference value, the variable impedance state of the impedance variable circuit is arbitrarily changed, and the reflection coefficient of the applicator is measured (calculated) every time (S6).

Subsequently, the state of the impedance variable circuit is controlled (changed) so that the target impedance matching is performed according to the calculated reflection coefficient of the applicator, whereby the signal transmission efficiency is compensated (S7).

Thereafter, the frequency of the high-frequency signal is adjusted according to the suppression / excitation effect obtained by measuring the potential of the mononegal neuron in the target region of the brain of the patient to be treated according to the result of brain stimulation (S8, S9).

If it is determined that all of the brain stimulation time has not elapsed, the process returns to the third step to repeat the above-described process. If the time has elapsed, the output of the high-frequency signal is stopped (S10).

Although the preferred embodiments of the present invention have been described in detail above, it should be understood that the scope of the present invention is not limited thereto. These embodiments are also within the scope of the present invention.

110: Signal generator 120: Signal modulator
130: power amplifier 140: directional coupler
150: impedance variable circuit 160: applicator
170: Control section 171A: Input terminal power detector
171B: output stage power detector 172: analog-to-digital converter
173: arithmetic unit 174: control unit

Claims (7)

A signal generator for generating a microwave signal;
A signal modulator for modulating the microwave signal into a high frequency signal of a pulse width modulation signal pattern for brain stimulation;
A power amplifier for amplifying the high frequency signal to a signal of a size required by the microwave brain stimulation device;
A directional coupler for transmitting the high frequency signal output from the power amplifier to the next stage and separating the reflected wave of the high frequency signal received through its own output terminal and the incident wave of the high frequency signal received through its input terminal;
An applicator for radiating the high-frequency signal supplied through the directional coupler in a state of being in direct contact with a region to be stimulated in a subject's brain to induce excitation and suppression of the brain without causing a temperature change;
An impedance variable circuit for varying an impedance so as to achieve a desired impedance matching between the power amplifier and the applicator; And
And a controller for controlling an impedance variable state of the impedance variable circuit so that an impedance matching between the applicator and the power amplifier is performed based on a reflection coefficient of the applicator,
The control unit
An input terminal power detector for outputting a DC voltage corresponding to an amount of power of the directional coupler based on an incident wave of the high frequency signal separated from the directional coupler;
An output stage power detector for outputting a DC voltage corresponding to an amount of power of the directional coupler based on a reflected wave of the high frequency signal separated from the directional coupler;
An analog-to-digital converter for converting an analog direct current voltage signal supplied from the input terminal power detector and an output terminal power detector into a digital direct current voltage signal;
An arithmetic unit for storing the digital signal converted by the analog-to-digital converter and calculating the reflection coefficient of the applicator from the stored digital signal; And
And a controller for controlling an impedance variable state of the impedance variable circuit to achieve impedance matching between the applicator and the power amplifier according to the reflection coefficient.
2. The apparatus of claim 1, wherein the signal modulator
Wherein the high-frequency signal is modulated in a pattern in which an on-period in which the microwave signal is output and an off-period in which the microwave signal is not output are repeated.
The variable impedance circuit according to claim 1, wherein the impedance variable circuit
An impedance tuner, a phase shifter, and two ports so as to vary the output impedance to various values.
The apparatus of claim 1, wherein the applicator
And a planar opening surface for facilitating contact with the part to be stimulated.
delete (a) a high-frequency signal of a pulse-width-modulated signal pattern modulated in such a manner that an on-period in which a microwave signal is output and an off-period in which a microwave signal is not output are repeated through an applicator of a brain stimulation apparatus, Inducing excitement and inhibition of the brain without inducing temperature changes by radiating in direct contact with the target site;
(b) confirming whether the signal transmission efficiency of the high-frequency signal falls below a predetermined reference value based on the output of the power detector of the brain stimulation apparatus;
(c) measuring the reflection coefficient of the applicator each time the signal transmission efficiency drops below the reference value while changing the impedance variable state of the impedance variable circuit of the brain stimulation device;
(d) compensating the signal transmission efficiency by controlling a state of the impedance variable circuit so that a target impedance matching is performed according to the measured reflection coefficient; And
(e) adjusting a repetition frequency of the high-frequency signal according to an inhibition / excitation effect to be obtained by measuring a potential of the unit monocyte in the stimulation target site,
The step (d)
An input terminal power detection step of outputting a DC voltage corresponding to an amount of power of the directional coupler based on an incident wave of the high frequency signal separated from the directional coupler;
An output stage power detection step of outputting a DC voltage corresponding to an amount of power of the directional coupler based on the reflected wave of the high frequency signal separated from the directional coupler;
An analog-to-digital conversion step of converting the analog direct-current voltage signal supplied by the input-stage power detection step and the output-stage power detection step into a digital direct-current voltage signal;
An arithmetic operation step of storing the digital signal converted by the analog-to-digital conversion step and calculating a reflection coefficient of the applicator from the stored digital signal; And
And controlling a variable impedance state of the impedance variable circuit so as to achieve an impedance matching between the applicator and a power amplifier connected to an input terminal of the directional coupler according to the reflection coefficient.
7. The method of claim 6, wherein step (e)
Further comprising the step of returning to step (a) or stopping the output of the high-frequency signal according to whether or not all of the pre-set brain stimulation time has elapsed.
KR1020160028266A 2016-03-09 2016-03-09 Apparatus and method for cerebral nerve stimulus using microwave signal KR101772663B1 (en)

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Application Number Priority Date Filing Date Title
KR1020160028266A KR101772663B1 (en) 2016-03-09 2016-03-09 Apparatus and method for cerebral nerve stimulus using microwave signal
CN201680083282.3A CN108697891B (en) 2016-03-09 2016-11-10 Utilize the brain stimulation device and method of microwave signal
PCT/KR2016/012882 WO2017155180A1 (en) 2016-03-09 2016-11-10 Apparatus and method for stimulating brain using microwave signal

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KR20190072723A (en) * 2017-12-18 2019-06-26 서울대학교산학협력단 Apparatus for stimulating brain

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WO2019078582A1 (en) * 2017-10-16 2019-04-25 서울대학교 산학협력단 Applicator for brain stimulation, using metal plate and short stub
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CN108697891A (en) 2018-10-23
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