KR101721976B1 - Terahertz sensor - Google Patents

Terahertz sensor Download PDF

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KR101721976B1
KR101721976B1 KR1020150143882A KR20150143882A KR101721976B1 KR 101721976 B1 KR101721976 B1 KR 101721976B1 KR 1020150143882 A KR1020150143882 A KR 1020150143882A KR 20150143882 A KR20150143882 A KR 20150143882A KR 101721976 B1 KR101721976 B1 KR 101721976B1
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sample
terahertz
terahertz electromagnetic
electromagnetic wave
substrate
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KR1020150143882A
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Korean (ko)
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손주혁
이동규
서민아
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서울시립대학교 산학협력단
한국과학기술연구원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B21/00—Machines, plants or systems, using electric or magnetic effects
    • F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect

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  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The present invention relates to a method for measuring the sensitivity of a sample by contacting a sample to increase the selective sensitivity of a terahertz electromagnetic wave and allowing easy confirmation of contact with the sample to enable more accurate measurement of the sample, To a terahertz detecting device that can minimize the size of the device and minimize the size limitation of the sample because it is measured using the reflection of terahertz electromagnetic waves.
According to the present invention, a terahertz output unit for outputting terahertz electromagnetic waves; A sample contact structure in which a sample is disposed, the sample contact structure advances the terahertz electromagnetic wave to the sample and advances the reflected terahertz electromagnetic wave from the sample; And a terahertz detector for detecting terahertz electromagnetic waves reflected from the sample through the sample contact structure, the sample contact structure comprising: a substrate; A sensitivity enhancement layer attached to the substrate and including apertures whose width, length and depth are determined such that the terahertz electromagnetic waves are responsive; And a contact sensing unit disposed on a front surface or a rear surface of the substrate and sensing whether the sample is in contact with the sensitivity enhancement layer, wherein the terahertz electromagnetic wave output from the terahertz output unit is transmitted through the substrate and the opening, And the terahertz electromagnetic wave reflected from the sample travels through the opening and the substrate to the terahertz detecting portion.

Description

TERAHERTZ SENSOR < RTI ID = 0.0 >

The present invention relates to a method for measuring the sensitivity of a sample by contacting a sample to increase the selective sensitivity of a terahertz electromagnetic wave and allowing easy confirmation of contact with the sample to enable more accurate measurement of the sample, To a terahertz detecting device that can minimize the size of the device and minimize the size limitation of the sample because it is measured using the reflection of terahertz electromagnetic waves.

The terahertz wave is an electromagnetic wave in a far infrared ray region located in the middle region between a microwave and a light wave, and has a frequency of about 0.1 to 10 THz, a wavelength of 0.03 to 3 mm, and an energy of 0.4 to 40 meV.

Since the terahertz wave band is located in the middle of the microwave and light wave bands, it has both the linearity of the light and the permeability of the electromagnetic wave. Since it has the characteristic that it can easily transmit the microwave or the light wave, , Food engineering, pollution monitoring and security search, and the importance is increasing day by day.

On the other hand, a device for analyzing the characteristics of a sample using a terahertz electromagnetic wave (hereinafter referred to as a terahertz detecting device) is being researched and developed.

Korean Patent No. 10-0926039 entitled " Ultra Precise and High Resolution Terahertz Spectrometer and Method of Measurement ", filed on November 13, 2007 and registered on November 3, 2009 by the Korea Research Institute of Standards and Science Patent Document 1) discloses a terahertz detecting apparatus for generating terahertz electromagnetic waves, irradiating the sample, and analyzing terahertz electromagnetic waves transmitted through the sample.

However, the configuration of Korean Patent No. 10-1069607 uses a transmission of terahertz, which limits the size of a sample that can be measured. In addition, since the degree of absorption of terahertz electromagnetic waves varies depending on the moisture contained in the sample, there is a disadvantage that the accuracy of the measured result varies depending on the content of water.

Also, for example, the name of "Method for improving the bio-tissue permeability of terahertz electromagnetic wave using substance substituting moisture of biological tissue" filed on December 6, 2012 and registered on January 2, 2014 by Yonsei University Korean Patent No. 10-1349343 (Patent Document 2) discloses a method for improving water sensitivity of a terahertz electromagnetic wave by using a substance that replaces moisture of a biological tissue, thereby increasing the diagnostic imaging depth of the terahertz electromagnetic wave and the resolution of the three- The method comprising:

However, Korean Patent No. 10-1349343 discloses a structure for increasing the accuracy of measurement by applying a substance substituting moisture contained in the sample. However, the accuracy of measurement results varies depending on the degree of contact between the sample and the quartz window have.

1. Korean Patent No. 10-0926039. 2. Korean Patent No. 10-1349343.

It is an object of the present invention to increase the selective sensitivity of terahertz electromagnetic waves in contact with a sample and to easily confirm contact with the sample, thereby enabling more accurate measurement of the sample and local cooling of the sample The present invention provides a terahertz detection apparatus that can minimize the size of a device and minimize the size of a sample by increasing detection sensitivity and measuring using reflection of a terahertz electromagnetic wave.

According to an aspect of the present invention, there is provided a terahertz apparatus including a terahertz output unit for outputting terahertz electromagnetic waves; A sample contact structure in which a sample is disposed, the sample contact structure advances the terahertz electromagnetic wave to the sample and advances the reflected terahertz electromagnetic wave from the sample; And a terahertz detector for detecting terahertz electromagnetic waves reflected from the sample through the sample contact structure, the sample contact structure comprising: a substrate; A sensitivity enhancement layer attached to the substrate and including apertures whose width, length and depth are determined such that the terahertz electromagnetic waves are responsive; And a contact sensing unit disposed on a front surface or a rear surface of the substrate and sensing whether the sample is in contact with the sensitivity enhancement layer, wherein the terahertz electromagnetic wave output from the terahertz output unit is transmitted through the substrate and the opening, And the terahertz electromagnetic waves reflected from the sample proceed through the opening and the substrate to the terahertz detecting section.

In the terahertz detecting apparatus according to the present invention, the sample contact structure may further include a cooling unit disposed on a front surface or a rear surface of the substrate, the cooling unit locally cooling the sample in contact with the sensitivity enhancing layer.

Further, in the terahertz detecting apparatus according to the present invention, the cooling section may include a Peltier element.

Further, in the terahertz detecting apparatus according to the present invention, the cooling section may include a pipe through which refrigerant flows.

delete

Also, in the terahertz detecting apparatus according to the present invention, the contact detecting unit may include a contact-type sensor for detecting whether or not the sample and the sensitivity enhancing layer are in contact with each other in accordance with a change in an electrical signal.

Further, in the terahertz detecting apparatus according to the present invention, the contact detecting section may include an optical sensor for optically detecting whether or not the sample contacts the sensitivity enhancing layer.

Further, in the terahertz detecting apparatus according to the present invention, the substrate may include a glass substrate.

Further, in the terahertz detecting apparatus according to the present invention, the sensitivity enhancement layer may include a conductive metal.

Further, in the terahertz detecting apparatus according to the present invention, the opening may have a width, a length and a depth determined so that the terahertz electromagnetic wave having a predetermined frequency band reacts sensitively.

Further, in the terahertz detecting apparatus according to the present invention, the opening may include a plurality of slits.

delete

The terahertz electromagnetic wave output from the terahertz output unit is propagated to the sample contact structure and the terahertz electromagnetic wave reflected from the sample through the sample contact structure is transmitted to the terahertz waveguide through the terahertz waveguide. And an optical unit for advancing to the Hertz detection unit.

Further, in the terahertz detecting apparatus according to the present invention, the optical section includes the terahertz electromagnetic wave outputted from the terahertz output section and a focusing lens for focusing the terahertz electromagnetic wave reflected from the sample through the sample contact structure .

According to the present invention, it is possible to increase the selective sensitivity of the terahertz electromagnetic wave by contacting with the sample, and it is possible to easily confirm whether or not the sample is in contact with the sample, thereby enabling more accurate measurement of the sample, It is possible to provide a terahertz detecting apparatus that can minimize the size of the device and minimize the size of the sample because the sensitivity can be increased and the reflection using the reflection of the terahertz electromagnetic wave can be used.

Further, the miniaturized terahertz detection apparatus can be realized by using the sample contact structure according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows an exemplary configuration of a sample contact structure according to a first embodiment of the present invention. Fig.
2 is a diagram showing an exemplary configuration of a sample contact structure according to a second embodiment of the present invention;
3 shows an exemplary configuration of a sample contact structure according to a third embodiment of the present invention.
4 is a view showing an exemplary configuration of a sample contact structure according to a fourth embodiment of the present invention;
5 is a view showing an exemplary configuration of a sample contact structure according to a fifth embodiment of the present invention;
6 is an exemplary block diagram of a terahertz detection apparatus according to the present invention;
7 is a diagram showing an exemplary configuration of a terahertz detecting apparatus according to the present invention;
8 is a view showing another exemplary configuration of a terahertz detecting apparatus according to the present invention;

Hereinafter, embodiments of the terahertz structure of the present invention and the terahertz detection apparatus using the terahertz structure will be described in more detail with reference to the accompanying drawings.

1 is a view showing an exemplary configuration of a sample contact structure according to a first embodiment of the present invention.

Referring to FIG. 1, a sample contact structure 100 according to a first aspect of the present invention includes a substrate 110 and a sensitivity enhancement layer 130.

The substrate 110 is, for example, a glass substrate through which terahertz can permeate.

The sensitivity enhancement layer 130 is deposited on the substrate 110. The sensitivity enhancement layer 130 also includes apertures 135 whose width, length, and depth are determined so that the terahertz electromagnetic waves are responsive.

The sensitivity enhancement layer 130 may comprise a conductive metal such as gold. The terahertz electromagnetic wave does not proceed at a portion other than the opening 135 of the sensitivity enhancement layer 130 and the terahertz electromagnetic wave propagates through the opening 135 portion. A terahertz electromagnetic wave is input into a sample (not shown) that is placed in contact with the sensitivity enhancement layer 130 on the sensitivity enhancement layer 130 through the substrate 110 and the opening 135, Hertz electromagnetic waves can be output through the aperture 135 and the substrate 110.

The opening 135 can be determined in terms of its width, length and depth so that the terahertz electromagnetic wave having a predetermined frequency band among the terahertz electromagnetic waves can be sensitively reacted.

That is, the width and depth of the opening 135 can be determined so as to respond sensitively to frequencies of a predetermined band among the 0.1 to 10 THz band depending on the characteristics of the sample to be measured.

The opening 135 may include, for example, a plurality of slits.

The sample contact structure 100 shown in Figure 1 may be in direct contact with the sample to enhance the selective sensitivity of the terahertz electromagnetic wave.

Also, since the measurement is performed using the reflection of the terahertz electromagnetic wave from the sample, for example, the apparatus size of the terahertz detection apparatus can be minimized and the limitation of the size of the sample can be minimized. That is, in the case of a device that performs measurement using a terahertz electromagnetic wave transmitted through a sample, there is a limitation on the size of the sample, and since the terahertz output portion and the terahertz detecting portion are located on the opposite side relative to the sample, There is a difficulty in minimizing.

However, in the case of using the sample contact structure 100 shown in FIG. 1, it is not necessary that the terahertz output portion and the terahertz detection portion are located on the opposite sides with respect to the sample, so that it is possible to minimize the size of the device, .

2 is a diagram showing an exemplary configuration of a sample contact structure according to a second embodiment of the present invention.

Referring to FIG. 2, a sample contact structure 100 'according to a second embodiment of the present invention includes a substrate 110, a sensitivity enhancement layer 130, and a cooling portion 150.

The substrate 110 and the sensitivity enhancement layer 130 are the same as those of the sample contact structure 100 described with reference to FIG.

The cooling unit 150 may be disposed, for example, on the rear surface of the substrate 110, or on the front surface of the substrate 110.

The cooling unit 150 is implemented using, for example, a Peltier element. The cooling unit 150 locally cools the sample contacted with the sensitivity enhancement layer 130. As described above, since the degree of absorption of the terahertz electromagnetic wave varies depending on the moisture contained in the sample, the accuracy of the measured result varies depending on the moisture content. In contrast, the sample contact structure 100 'according to the present invention can locally cool the sample, thereby minimizing the influence on the measurement result depending on the moisture.

3 is a view showing an exemplary configuration of a sample contact structure according to a third embodiment of the present invention.

Referring to FIG. 3, a sample contacting structure 100 '' according to a third aspect of the present invention includes a substrate 110, a sensitivity enhancing layer 130, and a cooling section 155.

The substrate 110 and the sensitivity enhancement layer 130 are the same as those of the sample contact structure 100 described with reference to FIG.

The cooling unit 155 may be disposed, for example, on the rear surface of the substrate 110, or on the front surface of the substrate 110.

The cooling unit 155 is implemented using, for example, a pipe through which refrigerant flows. The cooling section 155 locally cools the sample contacted with the sensitivity enhancement layer 130. As described above, since the degree of absorption of the terahertz electromagnetic wave varies depending on the moisture contained in the sample, the accuracy of the measured result varies depending on the moisture content. In contrast, the sample contacting structure 100 " according to the present invention can locally cool the sample, thereby minimizing the influence on the measurement result depending on the moisture content.

4 is a view showing an exemplary configuration of a sample contact structure according to a fourth embodiment of the present invention.

4, a sample contact structure 100 '' 'according to a fourth embodiment of the present invention includes a substrate 110, a sensitivity enhancement layer 130, a cooling unit 150, and a contact sensing unit 170 do. In addition, the cooling unit 150 may be replaced with the cooling unit 155 of FIG. 3, but the illustration is omitted.

The substrate 110, the sensitivity enhancement layer 130, and the cooling unit 150 are the same as those of the sample contact structure 100 'described with reference to FIG. 2, and thus description thereof is omitted.

The contact sensing unit 170 is disposed on the front surface or the rear surface of the substrate 110 and senses whether the sensitivity enhancing layer 130 is in contact with the sample.

For example, in FIG. 4, the touch sensing unit 170 is implemented using an optical sensor that is disposed on the rear surface of the substrate 110 and optically detects whether or not the sample contacts the sensitivity enhancing layer 130.

The optical sensor is implemented using, for example, a laser. That is, the laser is irradiated toward the sample and the contact state is detected by analyzing the characteristics of the laser reflected from the sample. That is, the contact state is detected by using the fact that the amount of the reflected laser changes when the contact is made with the sample.

5 is a view showing an exemplary structure of a sample contact structure according to a fifth embodiment of the present invention.

5, a sample contact structure 100 '' '' according to a fifth embodiment of the present invention includes a substrate 110, a sensitivity enhancing layer 130, a cooling unit 150, and a contact sensing unit 175 . In addition, the cooling unit 150 may be replaced with the cooling unit 155 of FIG. 3, but the illustration is omitted.

The substrate 110, the sensitivity enhancement layer 130, and the cooling unit 150 are the same as those of the sample contact structure 100 'described with reference to FIG. 2, and thus description thereof is omitted.

The contact sensing unit 175 is disposed on the front surface or the rear surface of the substrate 110 and senses whether the sensitivity enhancing layer 130 is in contact with the sample.

For example, in FIG. 5, the touch sensing unit 175 is implemented using a touch sensor that is disposed on the front surface of the substrate 110 and detects whether or not the sample is in contact with the change in electrical signal of the sensitivity enhancing layer 130.

The touch sensing unit 175 detects whether or not the sample and the sensitivity enhancing layer 130 are in contact with each other based on a change in capacitance, such as a touch sensor.

According to the sample contact structures 100 to 100 '' '' of the present invention described with reference to FIGS. 1 to 5, it is possible to increase the selective sensitivity of the terahertz electromagnetic wave in contact with the sample, , Enabling more accurate measurement of the sample, increasing the detection sensitivity through local cooling of the sample, and measuring with the reflection of the terahertz electromagnetic wave, thereby minimizing the size of the device and reducing the size of the sample It is possible to provide a sample contact structure that minimizes the limitation.

The present invention also provides a terahertz detection device comprising a sample contacting structure (100-100 " '") according to the invention described with reference to Figs.

6 is an exemplary block diagram of a terahertz detection apparatus according to the present invention.

Referring to FIG. 6, a terahertz detection apparatus according to the present invention includes a sample contact structure 100, a terahertz output unit 200, and a terahertz detection unit 300. In addition, the terahertz detecting apparatus according to the present invention may further include an optical unit 400.

The sample contact structure 100 is any one of the sample contact structures 100 to 100 " '' 'according to the present invention described with reference to Figs. 1 to 5.

The sample contact structure 100 advances the terahertz electromagnetic waves output from the terahertz output section 200 to a sample contacted with the sample contact structure 100 and transmits the terahertz electromagnetic wave reflected from the sample to the terahertz detection section 300 Proceed.

The terahertz output section 200 outputs terahertz electromagnetic waves. The configuration for outputting the terahertz electromagnetic wave is the same as that used in the conventional terahertz detection apparatus, and thus a detailed description thereof will be omitted.

The terahertz detector 300 detects terahertz electromagnetic waves reflected from the sample through the sample contact structure 100.

The terahertz detector 300 specifically detects terahertz electromagnetic waves reflected from the sample through the sample contact structure 100.

Since the terahertz electromagnetic wave having high sensitivity and high sensitivity is reflected from the sample through the sample contact structure 100, the terahertz detector 300 can detect the result more accurately than the conventional terahertz detector.

Referring to FIG. 6, the terahertz detecting apparatus according to the present invention may further include an optical unit 400.

The optical unit 400 advances the terahertz electromagnetic wave output from the terahertz output unit 200 to the sample contact structure 100 and converts the terahertz electromagnetic wave reflected from the sample through the sample contact structure 100 to a terahertz detection unit 300).

The terahertz detection apparatus according to the present invention may further include an optical unit 400 to provide flexibility in designing.

7 is a diagram showing an exemplary configuration of a terahertz detecting apparatus according to the present invention.

Referring to FIG. 7, a terahertz detecting apparatus according to the present invention includes a sample contact structure 100, a terahertz output unit 200, a terahertz detecting unit 300, and optical units (reflections 430, 450, 470, and 490 ).

The configuration of the optical unit (the reflection unit, 430, 450, 470, and 490) will be described in more detail as follows.

The first reflection part (reflection part) reflects the terahertz electromagnetic wave output from the terahertz output part 200 and proceeds to a beam splitter 430.

The beam splitter 430 advances the terahertz electromagnetic wave traveling from the terahertz output unit 200 through the first reflector (reflector) to the focusing lens 450, and is reflected from the sample to be incident on the sample contact structure 100, And proceeds through the focusing lens 450 to the second reflecting portion 470.

The focusing lens 450 focuses the terahertz electromagnetic wave traveling from the terahertz output unit 200 through the first reflector (reflector) and the beam splitter 430 and advances it to the sample contact structure 100, And converges the terahertz electromagnetic wave traveling through the sample contact structure 100 to proceed to the beam splitter 430. [

The second reflective portion 470 reflects the sample and advances the terahertz electromagnetic wave propagated through the sample contact structure 100 and the focusing lens 450 to the third reflective portion 490.

The third reflector 490 reflects the sample and advances the terahertz electromagnetic wave traveling through the sample contact structure 100, the focusing lens 450, and the second reflector 470 to the terahertz detector 300.

8 is a diagram showing another exemplary configuration of the terahertz detecting apparatus according to the present invention.

Another exemplary configuration of the terahertz detecting apparatus according to the present invention with reference to Fig. 8 is a simpler implementation of the terahertz detecting apparatus with reference to Fig.

Referring to FIG. 8, a terahertz detection apparatus according to the present invention includes a sample contact structure 100, a terahertz output unit 200, a terahertz detection unit 300, and optical units 430, 450, and 470.

The beam splitter 430 advances the terahertz electromagnetic wave propagated from the terahertz output unit 200 to the focusing lens 450 and is reflected from the sample and travels through the sample contact structure 100 and the focusing lens 450 And causes the terahertz electromagnetic wave to proceed to the second reflecting portion 470.

The focusing lens 450 focuses the terahertz electromagnetic waves traveling from the terahertz output unit 200 through the beam splitter 430 to the sample contact structure 100 and is reflected from the sample to be incident on the sample contact structure 100. [ And focuses the terahertz electromagnetic waves traveling through the focusing lens 450 and proceeds to the beam splitter 430.

The second reflective portion 470 reflects the sample and advances the terahertz electromagnetic wave propagated through the sample contact structure 100 and the focusing lens 450 to the third reflective portion 490.

According to the configuration with reference to Fig. 8, the terahertz detecting apparatus can be further downsized.

Although the present invention has been described in detail, it should be understood that the present invention is not limited thereto. Those skilled in the art will appreciate that various modifications may be made without departing from the essential characteristics of the present invention. Will be possible.

Therefore, the embodiments disclosed in the present specification are intended to illustrate rather than limit the present invention, and the scope and spirit of the present invention are not limited by these embodiments. The scope of the present invention should be construed according to the following claims, and all the techniques within the scope of equivalents should be construed as being included in the scope of the present invention.

According to the present invention, it is possible to increase the selective sensitivity of the terahertz electromagnetic wave by contacting with the sample, and it is possible to easily confirm whether or not the sample is in contact with the sample, thereby enabling more accurate measurement of the sample, It is possible to provide a terahertz detecting apparatus that can minimize the size of the device and minimize the size of the sample because the sensitivity can be increased and the reflection using the reflection of the terahertz electromagnetic wave can be used.

Further, the miniaturized terahertz detection apparatus can be realized by using the sample contact structure according to the present invention.

100: sample contact structure 110: substrate
130: sensitivity enhancement layer 135: aperture
150: cooling section 155: cooling section
170: contact detection unit 175: contact detection unit
200: terahertz output unit 300: terahertz detector unit
400: optical part 410: first reflection part
430: Beam separator 450: Focusing lens
470: second reflecting portion 490: third reflecting portion

Claims (14)

A terahertz output for outputting terahertz electromagnetic waves;
A sample contact structure in which a sample is disposed, the sample contact structure advances the terahertz electromagnetic wave to the sample and advances the reflected terahertz electromagnetic wave from the sample; And
A terahertz detector for detecting terahertz electromagnetic waves reflected from the sample through the sample contact structure;
, ≪ / RTI &
The sample contact structure includes:
Board;
A sensitivity enhancement layer attached to the substrate and including apertures whose width, length and depth are determined such that the terahertz electromagnetic waves are responsive; And
A touch sensing unit disposed on a front surface or a rear surface of the substrate and sensing whether the sample is in contact with the sensitivity enhancing layer,
, ≪ / RTI >
Wherein the terahertz electromagnetic wave output from the terahertz output portion passes through the substrate and the opening to the sample and the terahertz electromagnetic wave reflected from the sample travels through the aperture and the substrate to the terahertz detecting portion Lt; / RTI > The method according to claim 1,
The sample contact structure includes:
Further comprising a cooling portion disposed on a front surface or a rear surface of the substrate and cooling the sample in contact with the sensitivity enhancement layer locally. 3. The method of claim 2,
And the cooling section includes a Peltier element. 3. The method of claim 2,
And the cooling section includes a pipe through which refrigerant flows. delete The method according to claim 1,
Wherein the contact detection unit includes a contact type sensor for detecting whether the sample and the sensitivity enhancement layer are in contact with each other in accordance with a change in an electrical signal. The method according to claim 1,
Wherein the contact detection unit includes an optical sensor for optically detecting whether or not the sample contacts the sensitivity enhancement layer. The method according to claim 1,
Wherein the substrate comprises a glass substrate. The method according to claim 1,
Wherein the sensitivity enhancing layer comprises a conductive metal. The method according to claim 1,
Wherein the aperture has a width, a length and a depth determined so that the terahertz electromagnetic wave having a predetermined frequency band reacts sensitively. The method according to claim 1,
Wherein the aperture comprises a plurality of slits. delete The method according to claim 1,
Further comprising an optical section for advancing the terahertz electromagnetic wave output from the terahertz output section to the sample and for advancing the terahertz electromagnetic wave reflected from the sample through the sample contact structure to the terahertz detection section, . 14. The method of claim 13,
Wherein the optics comprises the terahertz electromagnetic wave output from the terahertz output and a focusing lens for focusing terahertz electromagnetic waves reflected from the sample through the sample contact structure.
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Cited By (2)

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KR20190111344A (en) * 2018-03-22 2019-10-02 한국과학기술연구원 Non-contact measuring system for optoelectronic properties of semiconductor material
KR102254587B1 (en) * 2020-06-12 2021-05-21 한국과학기술연구원 High efficiency and high sensitivity particle capture type terahertz sensing system

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