KR101677853B1 - Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same - Google Patents

Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same Download PDF

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Publication number
KR101677853B1
KR101677853B1 KR1020150106319A KR20150106319A KR101677853B1 KR 101677853 B1 KR101677853 B1 KR 101677853B1 KR 1020150106319 A KR1020150106319 A KR 1020150106319A KR 20150106319 A KR20150106319 A KR 20150106319A KR 101677853 B1 KR101677853 B1 KR 101677853B1
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KR
South Korea
Prior art keywords
retainer ring
ring member
carrier head
elastic
pressure
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Application number
KR1020150106319A
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Korean (ko)
Inventor
유현정
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유현정
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Publication date
Application filed by 유현정 filed Critical 유현정
Priority to KR1020150106319A priority Critical patent/KR101677853B1/en
Priority to CN201580066870.1A priority patent/CN107112260A/en
Priority to US15/532,964 priority patent/US20180264621A1/en
Priority to PCT/KR2015/012336 priority patent/WO2016093504A1/en
Priority to TW104139470A priority patent/TWI609454B/en
Application granted granted Critical
Publication of KR101677853B1 publication Critical patent/KR101677853B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A retainer ring of a carrier head for chemical mechanical polishing equipment according to the present invention includes: a second retainer ring member in contact with an outer surface of a wafer; a first retainer ring member in contact with the outside and an upper portion of the second retainer ring member; a pressure reduction unit for reducing pressure transferred from the upper portion of the first retainer ring member to the second retainer ring member; and a buffer region formed at a lower end of the first retainer ring member adjacent to the second retainer ring member. The pressure reduction unit is an elastic member inserted between the first and second retainer ring members, and elastic strength of the pressure reduction unit is greater than those of the first and second retainer ring members. Accordingly, the retainer ring of the carrier head separates the pressure applied from an upper portion thereof and transfers the pressure onto a pad disposed on a low portion thereof.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a retainer ring of a carrier head for a chemical polishing apparatus and a carrier head including the retainer ring.

The present invention relates to a retainer ring of a carrier head for a chemical polishing apparatus and a carrier head including the same.

An integrated circuit is typically formed on a substrate, in particular a silicon wafer, by successive deposition of a conductor, semiconductor or insulating layer. After each layer is deposited, the layer is etched to generate circuit characteristics. As a series of layers are sequentially deposited and etched, the outer or top layer surface of the substrate, i.e., the exposed surface of the substrate, is gradually non-planarized. This non-planar outer surface is a problem for the integrated circuit manufacturer. If the outer surface of the substrate is not planar, the photoresist layer lying thereon is also not planar.

The photoresist layer is typically patterned by photolithographic devices that focus the light image on the photoresist. If the outer surface of the substrate is too rough, the maximum height difference between the peak and the valley of the outer surface will exceed the focus depth of the imaging device and the light image can not be properly focused on the outer surface of the substrate. Designing a new photolithographic device with improved focus depth is a fairly expensive operation. Also, as the minimum wiring width used in the integrated circuit becomes smaller, a shorter wavelength of light must be used, which further reduces the available focus depth. Thus, there is a need to periodically planarize the substrate surface to provide a substantial planar layer surface.

Chemical mechanical polishing (CMP) is one method of planarization, in which a wafer (substrate) to be planarized is mounted on a polishing head, Is performed by contacting the substrate with the flexible thin film mounted on the lower surface. Thereafter, the substrate mounted on the head by contact with the flexible thin film comes into contact with the rotating polishing pad, the surface facing the surface contacting the flexible thin film. Wherein the head urges the substrate against the polishing pad and the head also rotates to provide additional movement between the substrate and the polishing pad. A polishing slurry comprising an abrasive and at least one chemical reagent is distributed on the polishing pad to provide a polishing chemical solution at the interface between the pad and the substrate. This CMP process is quite complex and differs from simple wet sanding. In the CMP process, the reactants in the slurry react with the outer surface of the substrate to form reaction sites. The polishing is performed by the interaction of the polishing pad having the reaction site and the abrasive particles.

Particularly in a CMP process, the polishing rate, degree of finishing, and flatness are determined by the pad and slurry combination, the relative speed between the substrate and the pad, and the force pressing the substrate against the pad. If the degree of flatness and finishing is insufficient, the substrate will be defective, so that the combination of the polishing pad and the slurry is selected according to the required degree of finishing and flatness. Under these conditions, the maximum throughput of the polishing apparatus is determined by the polishing rate. The polishing rate depends on the force with which the substrate is pressed against the pad. In particular, the greater the force, the faster the polishing rate. If the carrier head imposes a non-uniform load, i. E. The carrier head is subjected to a greater force only in one region of the substrate, the region of high pressure will be polished more quickly than the region of low pressure. Therefore, if the load is uneven, the substrate will be polished non-uniformly. One problem with recirculating CMP processes is that the edges of the substrate are often polished at a different speed than the substrate center (generally faster, sometimes slower).

This problem, called the "edge effect ", occurs even when the load is uniformly applied to the substrate. The edge effect generally occurs at the periphery of the substrate, e.g., 5 to 10 mm of the outermost edge of the substrate, which reduces the overall flatness of the substrate and makes the periphery of the substrate unsuitable for use in an integrated circuit , Reducing the yield.

To solve such a problem, Korean Patent Laid-Open Publication No. 10-2012-0012099 discloses a technique of cutting a retainer ring in contact with a membrane to a predetermined angle. However, this technique has a problem that the retainer ring itself must be machined and the contact area of the retainer ring which is substantially subjected to the strongest force in order to prevent detachment of the wafer, thereby causing an excessive load.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a new method of reducing the wafer edge effect by differently distributing pressure applied to the retainer ring to a portion contacting the outer surface of the wafer and a portion not contacting the outer surface, Structure retainer ring.

A retainer ring of a carrier head for a chemical polishing apparatus according to the present invention comprises: a second retainer ring member in contact with an outer surface of a wafer; A first retainer ring member in contact with an outer side and an upper side of the second retainer ring member; Pressure reducing means for reducing the pressure transmitted from the upper portion of the first retainer ring member to the second retainer ring member; And a buffer region formed at a lower end of the first retainer ring member adjacent to the second retainer ring member, wherein the pressure reducing means includes a first retainer ring member inserted into the first retainer ring member Wherein the elastic force of the pressure reducing means is greater than the elastic force of the first and second retainer ring members so that the retainer ring of the carrier head receives one pressure from the upper portion thereof, And separates and delivers them.

The retainer ring of the carrier head for chemical polishing apparatus further includes a sealing member disposed between the first retainer ring member and the second retainer ring member.

The sealing member is disposed between the elastic member and the buffer region.

The elastic member includes a first elastic portion disposed to directly contact the upper surface of the second retainer ring member and a second elastic portion disposed on the upper surface of the first elastic portion and having a smaller width than the first elastic portion.

At least one or more elastic members are provided on the first retainer ring.

The elastic member is provided on or in the retainer ring.

The present invention provides a carrier head for a chemical polishing apparatus comprising a retainer ring of a carrier head for the chemical polishing apparatus.

The present invention can reduce the wafer edge effect by differently distributing pressure applied to the retainer ring to a portion contacting the outer surface of the wafer and a portion not contacting the outer surface. In particular, the structure of the retainer ring can be changed only without changing the chamber for applying pressure to the retainer ring, so that the wafer edge effect can be reduced.

Particularly, the first pressure transmitted from the upper portion of the retainer ring is formed at the lower end of the first retainer ring member adjacent to the second retainer ring member and the pressure reducing means disposed between the first retainer ring member and the second retainer ring member It is possible to effectively prevent the excessive polishing problem due to the pad rebound at the edge of the wafer through the structure of appropriately distributing through the buffer region. The sealing member may be provided between the inner side of the first retainer ring member and the outer side of the second retainer ring member so that the slurry or the like generated during the polishing process of the wafer may contact the inner side of the first retainer ring member and the second retainer ring member It is possible to prevent it from flowing through the minute space.

1 is a perspective view of a retainer ring of a carrier head for a chemical polishing apparatus viewed from above, according to an embodiment of the present invention.
Fig. 2 is a perspective view of the retainer ring of Fig. 1 viewed from below. Fig.
3 is an exploded perspective view of the retainer ring of Fig.
4 is a cross-sectional view taken along the line IV-IV of the retainer ring of Fig.
5 is an enlarged view of the portion V of Fig.
6 is a view showing a state where a retainer ring of a carrier head for a chemical polishing apparatus according to an embodiment of the present invention is positioned on an edge region of a wafer on a pad.
7 is a cross-sectional view illustrating a pressure profile of a retainer ring of a carrier head for a chemical polishing apparatus according to an embodiment of the present invention.
8 is a view for explaining an edge phenomenon of a carrier head including a retainer ring according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described with reference to the accompanying drawings.

In an embodiment of the present invention, the inner / outer pressure profile (which means the pressure for pressing the actual pad) is different due to the elasticity that is differently formed in the same retainer ring. Hereinafter, The retainer ring of the carrier head for chemical polishing apparatus according to the embodiment will be described.

Fig. 1 is a perspective view of a retainer ring of a carrier head for a chemical polishing apparatus according to an embodiment of the present invention as viewed from above. Fig. 2 is a perspective view of the retainer ring of Fig. 4 is a cross-sectional view taken along line IV-IV of the retainer ring of Fig. 1, and Fig. 5 is an enlarged view of portion V of Fig.

1 to 3, a retainer ring 100 according to an embodiment of the present invention includes a portion (hereinafter referred to as a second retainer ring member) 120 that directly contacts the outer surface of the wafer 10, A first retainer ring member 110 which simultaneously makes contact with the outer side and the upper side of the ring member 120 and a second retainer ring member 110 between the first retainer ring member 110 and the second retainer ring member 120, A sealing member 140 disposed between the first retainer ring member 110 and the second retainer ring member 120 and a second retainer ring member 120 disposed between the first retainer ring member 120 and the second retainer ring member 120. [ And a buffer region 150 formed at the lower end of the first retainer ring member 110 adjacent to the first retainer ring member 120.

The elastic member 130 includes any material having higher elasticity than the first retainer ring member 110 or the second retainer ring member 120 and is within the scope of the present invention. At least one of the elastic members 130 may be provided on the upper and / or side surfaces of the second retainer ring member 120, and at least one may be used for a uniform pressure profile.

The specific structure of the elastic member 130 is as follows. The elastic member 130 includes a first elastic portion 131 disposed to directly contact the upper surface of the second retainer ring member 120 and a second elastic portion 131 disposed on the upper surface of the first elastic portion 131, And a second elastic portion 133 having a small width. That is, the overall cross-sectional shape of the elastic member 130 may be in the shape of ".". Here, the second elastic portion 133 may have a structure to be fitted on a groove formed in the first retainer ring member 110. However, the second retainer ring member 120 may be in a linear shape or a block shape, and may be disposed on the inner or outer surface of the second retainer ring member 120 to have higher elasticity than the second retainer ring member 120, all of which are within the scope of the present invention .

Although not shown in the drawing, the first retainer ring member 110 is engaged by the mechanical means (for example, a pin or a protruding portion) engaging the second retainer ring member 120, and mechanically interlocked and rotated.

The sealing member 140 is disposed between the inner side of the first retainer ring member 110 and the outer side of the second retainer ring member 120. Concretely, it may be inserted and fixed on a sealing groove formed on the inner surface of the first retainer ring member 110. It is possible to prevent the slurry or the like that is generated during the polishing process of the wafer from flowing through the fine space between the inside of the first retainer ring member 110 and the second retainer ring member 120 through the above- . Although the sealing member 140 is spaced apart from the buffer region 150 and the elastic member 130 in the figure, the buffer member 150 may be adjacent to the buffer region 150 or the elastic member 130, (140) is located between the buffer region (150) and the elastic member (130).

The buffer region 150 is a ring-shaped hollow space formed at the inner lower end of the first retainer ring member 110, and is adjacent to the lower surface of the outer surface of the second retainer ring member 120. Through the above structure, the pressure applied through the upper portion of the first retainer ring member 110 is transmitted to the second retainer ring member 120 after being relaxed through the buffer region 150.

The present invention allows the pressure that is pushed downward from the carrier head to be transferred from the first retainer ring member 110 to the second reticle ring 120 to prevent the wafer 10 from disengaging. At this time, the pressure to be transferred is reduced more than that of the first retainer ring member 110 by the second retainer ring member 120, and the first retainer ring member 110 and the second retainer ring member 120 ) Was used.

That is, in the present invention, by providing the two-retainer ring member 120 with an elastic member having a higher elasticity than the first retainer ring member 110, a technical arrangement is provided in which the pressure transmitted to the second retainer ring member 120 is reduced do.

7 is a cross-sectional view illustrating a pressure profile of a retainer ring of a carrier head for a chemical polishing apparatus according to an embodiment of the present invention.

Referring to Fig. 7, the pressure P1 is pushed downward from the top of the carrier head (not shown) through air or the like. The pressing of the retainer ring can be implemented through various configurations and methods, and the scope of the present invention is not limited to the pressing structure of a specific carrier head.

The pressure from the upper portion is directly transmitted to the lower pad 20 through the first retainer ring member 110 or the pressure from the upper retainer ring member 110, the elastic member 130, and the second retainer ring member 120 to the pad 20, whereby the second retainer ring member 120 and the first retainer ring member 110 are pressed downward.

The pad applying pressure P4 of the second retainer ring member 120 is reduced by the elastic member 130 such as rubber or the like so that the pad applying pressure P4 of the second retainer ring member 120 is reduced, Is lower than the pad applying pressure P2 of the first retainer ring member 110. [

Also, the profile of the pad rebound due to the pressing can be effectively controlled according to the width (w) of the buffer area. For example, if the width (w) is large, the maximum pad rebound point may be set within the width (w) of the buffer area.

8 is a view for explaining an edge phenomenon of a carrier head including a retainer ring according to an embodiment of the present invention.

8, partial areas 22 and 24 of the pad 20 are rebounded by the first retainer ring member 110 which is pressed at a higher pressure, but the rebound areas 22 and 24 are located between the wafer 10 , Or on the lower side of the buffer region 150 and / or the second retainer ring member 120, as shown in Fig. Here, the buffer region 150 disposed outside the rebound region 22 serves to reduce the influence of the pressure P2 transmitted to the lower side of the first retainer ring member to the rebound region 22 , Thereby preventing excessive rebound from being formed in the lower portion of the second retainer ring member (120).

As a result, it is possible to effectively prevent the excessive polishing problem due to the pad rebound at the wafer edge portion. In addition, the effect of securing the wafer on the second retainer ring member 120 is further improved by the rebound pad.

That is, by using the elastic member 130 as the pressure reducing means for reducing the pressure transmitted from the upper portion of the first retainer ring member 110 to the second retainer ring member 120, the pad rebound in the edge portion of the wafer It is possible to effectively prevent the problem of excessive polishing caused by the abrasion. In addition, the effect of securing the wafer on the second retainer ring member 120 is further improved by the rebound pad.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

100: retainer ring member
110: first retainer ring member
120: second retainer ring member
130: elastic member
140: sealing member
150: buffer area

Claims (7)

A retainer ring of a carrier head for a chemical polishing apparatus,
A second retainer ring member contacting the outer surface of the wafer;
A first retainer ring member in contact with an outer side and an upper side of the second retainer ring member;
Pressure reducing means for reducing the pressure transmitted from the upper portion of the first retainer ring member to the second retainer ring member; And
And a buffer region formed at a lower end of the first retainer ring member adjacent to the second retainer ring member,
Wherein the pressure reducing means is an elastic member inserted between the first retainer ring member and the second retainer ring member,
The elastic force of the pressure reducing means is larger than the elastic force of the first and second retainer ring members,
The buffer region is a ring-shaped hollow space formed at the inner lower end of the first retainer ring member 110 and is disposed adjacent to the lower end of the outer surface of the second retainer ring member 120, The pressure applied through the upper portion of the ring member 110 is transmitted to the second retainer ring member 120 after being relaxed through the buffer region,
Wherein the retainer ring of the carrier head separates and transfers one pressure received from the upper portion thereof onto a pad disposed on the lower portion.
The method according to claim 1,
In the retainer ring of the carrier head for chemical polishing apparatus,
And a sealing member disposed between the first retainer ring member and the second retainer ring member.
3. The method of claim 2,
Wherein the sealing member comprises:
Wherein the retainer ring is disposed between the elastic member and the buffer region.
The method according to claim 1,
And the elastic member includes a first elastic portion disposed to directly contact the upper surface of the second retainer ring member and a second elastic portion disposed on the upper surface of the first elastic portion and having a width smaller than that of the first elastic portion And the retainer ring of the carrier head for the chemical polishing apparatus.
The method according to claim 1,
The retainer ring of a carrier head for a chemical polishing apparatus according to claim 1, wherein at least one elastic member is provided on the first retainer ring.
The method according to claim 1,
Wherein the elastic member is an elastic layer provided on or in the retainer ring.
A carrier head for a chemical polishing apparatus comprising a retainer ring of a carrier head for a chemical polishing apparatus according to any one of claims 1 to 6.
KR1020150106319A 2014-12-08 2015-07-28 Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same KR101677853B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020150106319A KR101677853B1 (en) 2015-07-28 2015-07-28 Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same
CN201580066870.1A CN107112260A (en) 2014-12-08 2015-11-17 The retainer ring of chemical abrasive device carrier head and the carrier head including it
US15/532,964 US20180264621A1 (en) 2014-12-08 2015-11-17 Retainer ring for carrier head for chemical polishing apparatus and carrier head comprising same
PCT/KR2015/012336 WO2016093504A1 (en) 2014-12-08 2015-11-17 Retainer ring for carrier head for chemical polishing apparatus and carrier head comprising same
TW104139470A TWI609454B (en) 2014-12-08 2015-11-26 Cartridge ring for chemical polishing apparatus and carrier head containing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150106319A KR101677853B1 (en) 2015-07-28 2015-07-28 Retainer ring of carrier head for chemical mechanical polighing equipment and carrier head comprising the same

Publications (1)

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KR101677853B1 true KR101677853B1 (en) 2016-11-29

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200052591A (en) * 2018-11-07 2020-05-15 주식회사 케이씨텍 Carrier for substrate and chemical mechanical polishing apparatus comprising the same
KR20230091643A (en) * 2021-12-16 2023-06-23 주식회사 월덱스 A two-piece electrode mounted in the chamber of an etching apparatus for semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002530876A (en) 1998-11-25 2002-09-17 アプライド マテリアルズ インコーポレイテッド Carrier head with edge control for chemical mechanical polishing
US7210991B1 (en) 2006-04-03 2007-05-01 Applied Materials, Inc. Detachable retaining ring

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002530876A (en) 1998-11-25 2002-09-17 アプライド マテリアルズ インコーポレイテッド Carrier head with edge control for chemical mechanical polishing
US7210991B1 (en) 2006-04-03 2007-05-01 Applied Materials, Inc. Detachable retaining ring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200052591A (en) * 2018-11-07 2020-05-15 주식회사 케이씨텍 Carrier for substrate and chemical mechanical polishing apparatus comprising the same
KR102627543B1 (en) * 2018-11-07 2024-01-24 주식회사 케이씨텍 Carrier for substrate and chemical mechanical polishing apparatus comprising the same
KR20230091643A (en) * 2021-12-16 2023-06-23 주식회사 월덱스 A two-piece electrode mounted in the chamber of an etching apparatus for semiconductors
KR102619677B1 (en) 2021-12-16 2024-01-02 주식회사 월덱스 A two-piece electrode mounted in the chamber of an etching apparatus for semiconductors

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