KR101560846B1 - Compositions, optical component, system including an optical component, devices, and other products - Google Patents

Abstract

A composition useful for changing the wavelength of visible light or invisible light is disclosed herein. The composition comprises a solid imager and a quantum constrained semiconductor nanoparticle wherein the nanoparticle is included in the composition in an amount ranging from about 0.001 to about 15 weight percent based on the weight of the imager. The composition may further comprise a scatterer. Optical components including waveguide components and quantum confined semiconductor nanoparticles are also disclosed. An element comprising an optical component is disclosed. Also disclosed are systems comprising optical components including waveguide components and quantum confined semiconductor nanoparticles and light sources optically coupled to the waveguide components. Transcripts, kits, ink compositions and methods are also disclosed. A TFEL comprising quantum confined semiconductor nanoparticles on its surface is also disclosed.

Description

FIELD OF THE INVENTION [0001] The present invention relates to compositions, optical components, systems, devices and other products comprising optical components,

<Priority claim>

This application claims the benefit of U.S. Provisional Application No. 60 / 946,090, filed June 25, 2007; U.S. Serial No. 60 / 949,306, filed July 12, 2007; U.S. Application Serial No. 60 / 946,382, filed June 26, 2007; U.S. Serial No. 60 / 971,885, filed September 12, 2007; U.S. Serial No. 60 / 973,644, filed September 19, 2007; And U. S. Serial No. 61 / 016,227, filed December 21, 2007, each of which is incorporated herein by reference in its entirety.

The present invention relates to optical components, systems comprising optical components, devices comprising optical components, and technical fields of compositions useful in the above.

SUMMARY OF THE INVENTION [

According to one aspect of the present invention, there is provided an optical component comprising a waveguide component comprising between about 0.001 and about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the waveguide component is transparent to light emitted from the light source and to light emitted by the nanoparticle. In certain embodiments, the optical component further comprises a filter layer disposed on and / or below the nanoparticles. In certain embodiments, the waveguide component further comprises a scatterer in an amount ranging from about 0.001% to about 15% by weight of the weight of the waveguide component. In certain embodiments, the nanoparticles comprise a core / shell structure. In certain embodiments, the waveguide component is adapted to have a light source optically coupled to the waveguide component. In certain embodiments, the nanoparticles are included in a layer disposed over a predetermined area of the surface of the waveguide component. In certain embodiments, the layer comprising nanoparticles has a thickness of from about 0.1 to about 200 micrometers. In certain embodiments, the layer comprising nanoparticles is sufficiently thick to absorb light incident on the layer. In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed. In certain embodiments, the quantum constrained semiconductor nanoparticles are comprised in a composition further comprising an imidazolium material, wherein the composition comprises between about 0.001 and about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material . Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the nanoparticles are included in a predetermined arrangement disposed over a predetermined area of the surface of the waveguide component. In certain embodiments, the composition is included in a predetermined arrangement disposed over a predetermined area of the surface of the waveguide component. In certain embodiments, the nanoparticles are embedded in a predetermined region of the waveguide component in a predetermined arrangement. In certain embodiments, the predetermined arrangement has a thickness of about 0.1 to about 200 [mu] m.

According to another aspect of the present invention there is provided an optical component comprising a waveguide component comprising a composition comprising a quantum constrained semiconductor nanoparticle and a fugitive material, wherein the composition comprises from about 0.001 to about 15 Percent by weight quantum confined semiconductor nanoparticles. In certain embodiments, the composition further comprises a scatterer. In certain embodiments, the scatterer is included in the composition in an amount ranging from about 0.001 to about 15 weight percent of the weight of the impurity. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the composition is disposed in a predetermined arrangement over a predetermined area of the surface of the waveguide component. In certain embodiments, the predetermined arrangement has a thickness of about 0.1 to about 200 [mu] m. In certain embodiments, the composition is embedded in a predetermined region of the waveguide component in a predetermined arrangement. In certain embodiments, the optical component further comprises means for coupling light from the light source to the waveguide component.

According to another aspect of the present invention there is provided an optical component comprising a waveguide component comprising a layer comprising a quantum constrained semiconductor nanoparticle and an impurity material, wherein the layer comprises from about 0.001 to about 15 Percent by weight quantum confined semiconductor nanoparticles. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the layer further comprises a scatterer. In certain embodiments, the scatterer is included in the layer in an amount ranging from about 0.001% to about 15% by weight of the impurity material. In certain embodiments, the optical component further comprises means for coupling light from the light source to the waveguide component.

According to another aspect of the present invention there is provided an optical component comprising a film comprising a carrier substrate comprising quantum confined semiconductor nanoparticles in a predetermined arrangement on a predetermined area of a surface wherein the film is adhered to the surface of the waveguide component do. In certain embodiments, the optical component further comprises means for coupling light from the light source to the waveguide component. In certain embodiments, the film comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the film. In certain embodiments, the film comprises a film taught herein. In certain embodiments, the film comprises a transcript.

According to another aspect of the present invention there is provided an optical component comprising a film comprising a carrier substrate comprising a composition comprising a quantum constrained semiconductor nanoparticle and a fugitive material, And the film is attached to the surface of the waveguide part. In certain embodiments, the composition comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the composition further comprises a scatterer. In certain embodiments, the scatterer is included in the composition in an amount ranging from about 0.001 to about 15 weight percent of the weight of the impurity. In certain embodiments, the film comprises a transcript.

According to another aspect of the present invention there is provided an optical component comprising a waveguide component comprising between about 0.001 and about 15 weight percent of the quantum confined semiconductor nanoparticles based on the weight of the waveguide component and a light source optically coupled to the waveguide component Is provided. In certain embodiments, the light source is optically coupled to the edge of the waveguide component. In certain embodiments, the light source is optically coupled to the surface of the waveguide component. In certain embodiments, the nanoparticles are included in a predetermined arrangement disposed on the surface of the waveguide component. In certain embodiments, the nanocrystals are included in a layer disposed over the surface of the waveguide component. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed. In certain embodiments, the layer further comprises a scatterer. In certain embodiments, the nanoparticles are included in the layer in an amount ranging from about 0.001 to about 15 weight percent of the weight of the impurity. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material.

According to another aspect of the present invention, there is provided a system comprising an optical component comprising a film taught herein disposed on a waveguide component and a light source optically coupled to the waveguide component. In certain embodiments, the film comprises a transcript.

According to another aspect of the present invention there is provided an optical component comprising a waveguide component comprising a composition comprising a quantum constrained semiconductor nanoparticle and a fugitive material wherein the layer comprises from about 0.001 to about 15 weight percent, Of the quantum confined semiconductor nanoparticles) and a light source optically coupled to the waveguide component. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the composition further comprises a scatterer.

In certain embodiments, a system may include two or more optical components taught herein and one or more light sources. In this particular embodiment, the optical component is preferably arranged so that the waveguide component of each optical component is parallel to the waveguide component of the other optical component, and each optical component is coupled to a separate light source. In this particular embodiment, the optical components are preferably optically separated from one another such that there is no "optical communication" or "cross-talk" between the optical components. In this particular embodiment, this separation can be accomplished by an air gap due to the physical spacing between parts or by a layer of low refractive index material. Other suitable optical separation techniques may also be used. In certain embodiments, each optical component is coupled to a separate light source.

According to another aspect of the invention, there is provided an element comprising an optical component as taught herein.

According to another aspect of the invention, there is provided an element comprising a film taught herein.

According to another aspect of the invention, there is provided an element comprising a system taught herein.

In certain embodiments, the device comprises a display. In certain embodiments, the device comprises a solid state lighting device or other lighting unit. In certain embodiments, the device includes a sign. In certain embodiments, the device comprises a photovoltaic device. In certain embodiments, the device comprises other electronic or optoelectronic devices.

According to another aspect of the present invention there is provided a composition useful for modifying wavelengths of visible or invisible light, including imagers and quantum confined semiconductor nanoparticles, wherein the nanoparticles are present in the range of about 0.001 to about &lt; RTI ID = To about 15% by weight of the composition. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the composition further comprises a scatterer in an amount ranging from about 0.001% to about 15% by weight based on the weight of the impurity material. In certain embodiments, at least a portion of the nanoparticles comprise a ligand having affinity for the fungi substance on the surface.

According to another aspect of the present invention there is provided a film comprising a carrier substrate comprising a predetermined array of quantum confined semiconductor nanoparticles over a predetermined portion of the surface. In certain embodiments, the nanoparticles are included in a layer disposed over the surface of the film. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. In certain embodiments, the carrier substrate comprises a substantially optically transparent material. In certain embodiments, the film comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the film. In certain embodiments, the predetermined arrangement further comprises a scatterer. In certain embodiments, the nanoparticles are included in the propellant material. In certain embodiments, the nanoparticles are included in the composition in an amount ranging from about 0.001% to about 15% by weight based on the weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the composition further comprises a scatterer. In certain embodiments, the film comprises a transcript. In certain embodiments, the film is adapted to be fixedly attached to a surface. In certain embodiments, the film is adapted to be removably attached to the surface. In certain embodiments, the film is included in an optical component attached to the surface of the waveguide component. In certain embodiments, additional layers and / or features (including, but not limited to, filters, reflective layers, coupling means, etc.) are also included. In certain embodiments, a film is included in the device.

According to another aspect of the present invention there is provided a kit comprising a light source and one or more films adapted to optically couple to a waveguide component wherein the at least one film comprises quantum confined semiconductor nanoparticles And a carrier substrate. In certain embodiments, the nanoparticles are disposed in a predetermined arrangement on a predetermined area of the carrier substrate. In certain embodiments, the film comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the film. In certain embodiments, the nanoparticles are included in the propellant material. In certain embodiments, the nanoparticles are included in the propellant material in an amount ranging from about 0.001% to about 15% by weight based on the weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the imager material further comprises a scatterer. In certain embodiments, the film comprises a transcript. In certain embodiments, the film is adapted to be fixedly attached to a surface. In certain embodiments, the film is adapted to be removably attached to the surface. In certain embodiments, the kit comprises a light source and one or more films adapted to be optically coupled to the waveguide component, wherein the one or more films comprise nanoparticles disposed on the surface of the carrier substrate, Film. In certain embodiments, the kit further comprises a waveguide component.

According to another aspect of the present invention there is provided a method of manufacturing a semiconductor device comprising applying a film taught herein to a surface of a member having a waveguide capability and irradiating the light onto the surface of a member comprising a quantum confined semiconductor nanoparticle that is directly or indirectly contained on the carrier substrate And coupling the light to a surface or edge of the member to optically excite the light. In certain embodiments, the members include windows or other structural, decorative, architectural or other structures or elements made from materials having waveguiding capabilities. In certain embodiments, the film comprises a transcript. The film may be permanently bonded to the surface of the member through the use of an optical adhesive, or may be relocatable by using a non-permanent adhesive or "static tack" film.

According to another aspect of the present invention, there is provided a thin film electroluminescent lamp comprising quantum confined semiconductor nanoparticles disposed on a surface. In certain embodiments, the nanoparticles are disposed in a predetermined arrangement on a predetermined area of the surface of the lamp. In certain embodiments, the nanoparticles are included in the propellant material. In certain embodiments, the imager material further comprises a scatterer. In certain embodiments, the imager material comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, the nanoparticles are included in a layer disposed over the surface of the lamp. In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. In certain embodiments, the layer further comprises a scatterer. In certain embodiments, the layer further comprises an impurity material, wherein the layer comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. In certain embodiments, the imager material further comprises a scatterer. In certain embodiments, the scatterer is included in an amount ranging from about 0.001% to about 15% by weight, based on the weight of the impurity material. In certain embodiments, the scatterer is included in an amount in the range of about 0.1 to 2 weight percent based on the weight of the impurity material. In certain embodiments, the weight ratio of the quantum constrained semiconductor nanoparticles to the scatterer is from about 1: 100 to about 100: 1. In certain embodiments, the lamp may further comprise one or more filter layers. Such a filter may be disposed on and / or below the nanoparticles. In certain embodiments, the lamp further comprises one or more reflective layers. In certain embodiments, the lamp further comprises an outcoupling feature on the surface of the lamp on which the nanoparticles are disposed. In certain embodiments, the lamp further comprises an outcoupling feature on the nanoparticles. In certain embodiments, additional layers and / or features (including, but not limited to, filters, reflective layers, coupling means, brightness enhancement films, etc.) are also included. In certain embodiments, the TFEL lamp comprises a film taught herein above on a surface. In certain embodiments, the film comprises a transcript.

According to another aspect of the present invention, there is provided an ink composition comprising a liquid vehicle comprising a composition comprising at least one functional group capable of crosslinking, and quantum confined semiconductor nanoparticles. In certain embodiments, the functional units may be crosslinked by UV treatment. In certain embodiments, the functional units may be crosslinked by thermal treatment. In certain embodiments, the functional units may be crosslinked by other crosslinking techniques readily identifiable by those skilled in the relevant art. In certain embodiments, a composition comprising one or more functional groups that can be crosslinked can be a liquid vehicle itself. In certain embodiments, it can be an adjuvant daily. In certain embodiments, it may be a constituent of a mixture with a liquid vehicle. In certain embodiments, the ink may further comprise a scatterer.

In certain embodiments, the transfer of the ink from the liquid to the solid takes place by simply solvent evaporation, and no crosslinking takes place.

According to another aspect of the present invention, there is provided an ink composition comprising a quantum confined semiconductor nanoparticle, a liquid vehicle, and a scattering body.

According to another aspect of the present invention, there is provided an element comprising a composition and / or an ink composition taught herein. In certain embodiments, the ink and / or composition is included in a component of the device. In certain embodiments, the ink and / or composition is included on the surface of the part. In certain embodiments, the ink and / or composition may be included in the device as a layer. In certain embodiments, the ink and / or composition is included on the top and / or bottom surface of the device. The ink and / or composition may be included in a predetermined arrangement on a predetermined area of the surface on which it is disposed. This arrangement may or may not be patterned according to the particular application. In certain embodiments, more than one predetermined array portion is included. In certain embodiments, the device comprises a display, a solid state lighting device, another light emitting device, a photovoltaic device, or other electronic or optoelectronic device.

These and other aspects and embodiments described herein and contemplated by this disclosure constitute embodiments of the present invention.

It is to be understood that both the foregoing description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed. Other embodiments will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein.

In the drawings,
1 is a schematic diagram showing an example of an embodiment of a system comprising an optical component according to the present invention.
2 is a schematic diagram showing an example of an embodiment of a system comprising an optical component according to the invention;
3 is a schematic diagram showing an example of an embodiment of the present invention.
4 shows a spectrum illustrating a method of measuring quantum efficiency.
5 is a schematic diagram showing an example of an embodiment of the present invention.
6 is a schematic diagram showing an example of an embodiment of a TFEL lamp according to the present invention.
BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings are simplified views provided for illustration only; The actual structure may vary in many ways, including the relative dimensions of the indicated items and their aspects.
For a better understanding of the invention, together with other advantages and capabilities thereof, reference is now made to the following disclosure and appended claims in conjunction with the above-described drawings.

According to one aspect of the present invention there is provided a composition comprising a biocompatible and quantum constrained semiconductor nanoparticles wherein the nanoparticles are incorporated into the composition in an amount ranging from about 0.001 to about 15 weight percent based on the weight of the biocompatible material do.

In certain preferred embodiments, the composition comprises from about 0.01 to about 10 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the fugitive material. In certain more preferred embodiments, the composition comprises from about 0.01 to about 5 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. In certain most preferred embodiments, the composition comprises from about 0.1 to about 3 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. In this particular most preferred embodiment, the composition comprises from about 0.1 to about 2 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material.

In certain embodiments, the quantum confined semiconductor nanoparticles comprise semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals comprise a core / shell structure.

In certain embodiments, the composition further comprises a scatterer. In certain embodiments, the scatterer is also included in the composition in an amount ranging from about 0.001% to about 15% by weight, based on the weight of the impurity material. In certain embodiments, the scatterer concentration is from about 0.1 to 2% by weight, based on the weight of the impurity material. In certain embodiments, the weight ratio of the quantum constrained semiconductor nanoparticles to the scatterer is from about 1: 100 to about 100: 1.

Examples of scatterers (also referred to as light scattering particles) that can be used in the aspects and aspects of the present invention contemplated by the present disclosure include metal or metal oxide particles, air bubbles, and glass and polymer beads Bin). Other scatterers can be readily ascertained by those skilled in the art. In certain embodiments, the scatterer has a spherical shape. Preferred examples of scattering particles include, but are not limited to, TiO ₂ , SiO ₂ , BaTiO ₃ , BaSO ₄ and ZnO. Particles of other materials which are non-reactive with the impurity material and which can increase the absorption path length of the excitation light in the impurity material can be used. Further, a scattering body for assisting outcoupling of the down-converted light may be used. This may or may not be the same scatterer used to increase the absorption path length. In certain embodiments, the scattering body may have a high refractive index (e.g., TiO _2, BaSO _4, and so on) or a low refractive index (gas bubbles). Preferably, the scatterer is not luminous.

The choice of the size and size distribution of the scatterer can be readily determined by one of ordinary skill in the art. The size and size distribution is preferably based on the refractive index mismatch of the scattering particles and the impurity material in which the scattering body is dispersed, and the preselected wavelength (s) scattered according to Rayleigh scattering theory. The surface of the scattering particles can be further treated to improve dispersibility and stability in the emulsion. In one embodiment, the scattering particles comprise (+ R902 from DuPont (DuPont)) of about 0.001 to about 20% by weight at a concentration in the range 0.2 ㎛ particle size of the TiO _2. In certain preferred embodiments, the concentration range of the scatterer is from 0.1 wt% to 10 wt%. In certain more preferred embodiments, the composition comprises a scatterer (preferably comprising TiO ₂ ) in a concentration ranging from about 0.1 wt% to about 5 wt%, most preferably from about 0.3 wt% to about 3 wt% .

Examples of useful materials useful in various aspects and aspects of the invention described herein include polymers, monomers, resins, binders, glass, metal oxides, and other non-polymeric materials. In certain embodiments, the imager material is non-photoconductive. In certain embodiments, an additive capable of dissipating charge is further included in the impurity material. In certain embodiments, the charge dissipation additive is included in an amount effective to quench any trapped charge. In certain embodiments, the imager material is non-photoconductive and further comprises an additive capable of dissipating charge, wherein the additive is included in an amount effective to destroy any trapped charge. Preferred imagers include at least partially transparent, preferably completely transparent, polymeric and non-polymeric materials for preselected wavelengths of visible and non-visible light. In certain embodiments, preselected wavelengths are visible light (e.g., 400 to 700 nm), ultraviolet (e.g., 10 to 400 nm) and / or infrared (e.g., 700 nm to 12 μm) And may include the wavelength of the region. Preferred impregnable materials include cross-linked polymers and solvent-cast polymers. Examples of preferred impregnable materials include, but are not limited to, glass or transparent resins. Particularly, a resin such as a non-curable resin, a thermosetting resin or a photo-curable resin is suitably used from the viewpoint of workability. Specific examples of such resins in oligomer or polymer form include melamine resins, phenolic resins, alkyl resins, epoxy resins, polyurethane resins, maleic acid resins, polyamide resins, polymethylmethacrylate, polyacrylates, polycarbonates, Polyvinyl alcohol, polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose, copolymers containing monomers forming these resins, and the like. Other suitable proprietary materials may be identified by those skilled in the art.

In certain aspects and aspects of the invention contemplated by the present disclosure, the imager material comprises a photocurable resin. The photocurable resin may be a preferred imager material in which the composition is patterned in certain embodiments. As the photocurable resin, a photopolymerizable resin such as acrylic acid or methacrylic acid based resin containing a reactive vinyl group, a photopolymerizable resin generally containing a photosensitive agent such as polyvinyl cinnamate, benzophenone and the like can be used. If a photosensitizer is not used, a thermosetting resin can be used. These resins may be used individually or in combination with two or more.

In certain aspects and aspects of the present invention contemplated by the present disclosure, the propellant material comprises a solvent-cast resin. A polymer such as polyurethane resin, maleic acid resin, polyamide resin, polymethyl methacrylate, polyacrylate, polycarbonate, polyvinyl alcohol, polyvinyl pyrrolidone, hydroxyethyl cellulose, carboxymethyl cellulose, Copolymers containing monomers to form resins and the like may be dissolved in solvents known to those skilled in the art. During solvent evaporation, the resin forms a solid propellant for semiconductor nanoparticles. In certain embodiments, a composition comprising a quantum constrained semiconductor nanoparticle and a fugitive material may be formed from an ink composition comprising a quantum constrained semiconductor nanoparticle and a liquid vehicle, wherein the liquid vehicle comprises one or more And a functional group. The functional units may be crosslinked, for example, by UV treatment, heat treatment, or other crosslinking techniques readily identifiable by those skilled in the relevant art. In certain embodiments, a composition comprising one or more functional groups that can be crosslinked can be a liquid vehicle itself. In certain embodiments, it can be an adjuvant daily. In certain embodiments, it may be a constituent of a mixture with a liquid vehicle. In certain embodiments, the ink may further comprise a scatterer.

In certain embodiments of the invention contemplated by the present disclosure, the quantum confined semiconductor nanoparticles (e.g., semiconductor nanocrystals) are distributed within the impurity material as discrete particles.

In certain embodiments of the invention contemplated by this disclosure, the quantum confined semiconductor nanoparticles distributed in the impurity material may comprise condensed (or agglomerated) particles.

In certain embodiments of the present invention contemplated by the present disclosure, the quantum confined semiconductor nanoparticles may be contained within or adsorbed onto imager particles. These impeller particles may be polymeric or inorganic. These impeller particles can be dispersed within the impeller material or on top of the impeller material.

According to another aspect of the present invention there is provided a film comprising a carrier substrate comprising a predetermined array of quantum confined semiconductor nanoparticles over a predetermined area of the surface. In certain embodiments, the film comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the film.

In certain embodiments, the quantum confined semiconductor nanoparticles are included directly or indirectly on a predetermined region of the surface of the carrier substrate in a predetermined arrangement.

In certain embodiments, the quantum confined semiconductor nanoparticles are included in the impurity material in an amount ranging from about 0.001% to about 15% by weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material. In certain embodiments, scatterers are included with the nanoparticles.

In certain embodiments, the quantum confined semiconductor nanoparticles are included in a layer disposed over the surface of the film. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed.

In certain embodiments, additional layers and / or features (including, but not limited to, filters, reflective layers, coupling means, etc.) are also included. Examples of various additional layers and / or features discussed herein for those included in the optical component or waveguide component may also be included in the film. In certain embodiments, the film comprises a transcript.

According to another aspect of the invention, there is provided an optical component comprising a waveguide component and quantum confined semiconductor nanoparticles. In certain embodiments, the quantum confined semiconductor nanoparticles may be included in the impurity material. In certain embodiments, the quantum confined semiconductor nanoparticles are included in a composition according to the present invention.

In certain embodiments, the quantum confined semiconductor nanoparticles are included directly or indirectly on a predetermined region of the surface of the waveguide component in a predetermined arrangement.

In various aspects and embodiments of the present invention contemplated by the present disclosure, the predetermined arrangement may be any coordinate or content. For example, the predetermined arrangement may include any type of image (e.g., a logo, design, photograph, other graphic, text (e.g., letters, words, numbers, letters, (E.g., a combination of logos, designs, photographs, other graphics, and / or text) may be displayed on the display. Alternatively, the predetermined arrangement may be a layer that completely or partially covers the predetermined area. In certain embodiments, the second predetermined arrangement may further be disposed above and / or below the first predetermined arrangement. In certain embodiments, the second predetermined arrangement comprises quantum confined semiconductor nanoparticles. In certain embodiments including a predetermined arrangement, the predetermined arrangement may comprise opaque or other non-emissive material which may be useful, for example, a quantum confined semiconductor nano- The brightness of the background layer may improve the details, contrast or other aspects of visibility of any one or more of the other predetermined arrangements. The predetermined arrangement is typically disposed on the surface of the component or element visible when the component or element is used, Are not included or included within or on other devices, products, or other items.

In certain embodiments that include two or more predetermined alignment portions, the alignment portions may be positioned to have different orientations. For example, one may be positioned so as to be intended to appear in a first orientation, and the other is intended to appear in a second orientation, e.g., a 90 degree rotation from the first orientation.

Quantum confined semiconductor nanoparticles may have photoluminescence properties that confine electrons and holes, absorb light, and re-emit different wavelengths of light. The color characteristics of light emitted from quantum confined semiconductor nanoparticles depend on the size of the quantum confined semiconductor nanoparticles and the chemical composition of the quantum confined semiconductor nanoparticles.

In certain embodiments, the quantum confined semiconductor nanoparticles comprise one or more types of quantum confined semiconductor nanoparticles in terms of chemical composition and size. The type (s) of the quantum confined semiconductor nanoparticles included in one aspect or embodiment of the present invention contemplated by the present disclosure is determined by the wavelength of the light being switched and the wavelength of the desired light output. As discussed herein, the quantum confined semiconductor nanoparticles may or may not include a shell and / or a ligand on its surface. Shells and / or ligands on the quantum confined semiconductor nanoparticles can act to passivate non-radiative defective sites and prevent aggregation or agglomeration that overcomes the van der Waals binding forces between the nanoparticles. In certain embodiments, the ligand may comprise a material having affinity for any impurity material that can contain the quantum constrained semiconductor nanoparticles. As discussed herein, in certain embodiments, the shell comprises an inorganic shell.

The size and composition of the quantum confined semiconductor nanoparticles can be selected such that the nanoparticles emit photons of a predetermined wavelength.

For example, the predetermined arrangement may comprise quantum confined semiconductor nanoparticles that emit light of the same or different wavelengths.

In monochromatic embodiments, the quantum confined semiconductor nanoparticles are selected to emit at a predetermined wavelength or wavelength band for the desired color upon excitation of the excitation light.

In multicolor or multicolor embodiments, for example, the quantum confined semiconductor nanoparticles are selected to emit at least two different predetermined wavelengths for the desired light output by excitation by light energy from one or more light sources. The quantum confined semiconductor nanoparticles may be further arranged according to the wavelength or wavelength band of their emission according to a predetermined arrangement.

The quantum confined semiconductor nanoparticles included in the various aspects and embodiments of the invention contemplated by this disclosure are preferably members of a population of quantum confined semiconductor nanoparticles having a narrow size distribution. More preferably, the quantum confined semiconductor nanoparticles comprise a simple dispersion or a substantially simple dispersion population of quantum confined semiconductor nanoparticles.

The quantum confined semiconductor nanoparticles included in the various aspects and embodiments of the present invention contemplated by this disclosure preferably have high emission quantum efficiencies such as 30%, 40%, 50%, 60%, 70%, 80 % Or more than 90%.

In certain embodiments, the optical component of the present invention is useful for displaying one or more illuminated patterns corresponding to one or more predetermined arrangements of quantum confined semiconductor nanoparticles included in an optical component when optically coupled to a light source Do.

In certain aspects and aspects of the present invention contemplated by the present disclosure, the predetermined arrangement is visible (e.g., when not optically excited by the guided light from one or more light sources) under ambient light conditions (&Lt; 0.1 Abs unit over visible spectrum, or transmittance > 90% over visible spectrum).

The quantum confined semiconductor nanoparticles included in certain embodiments of the invention contemplated by this disclosure are useful for altering the wavelength of at least some of the light emitted from the light source when optically coupled to the light source.

In these applications, the quantum confined semiconductor nanoparticles are selected to have a smaller bandgap than the energy of at least a portion of the original light emitted from the light source. In certain embodiments, more than one light source may be optically coupled to the optical component.

In certain embodiments, an optical component comprises a waveguide component comprising one or more features, wherein the feature comprises a composition comprising a director material for the quantum confined semiconductor nanoparticles. Optionally, scatterers and / or other additives may also be included in the composition.

In certain embodiments, the optical component comprises at least one layer comprising quantum confined semiconductor nanoparticles. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. Examples of compositions relating to being included in a layer that may include quantum confined semiconductor nanoparticles are described herein.

In certain embodiments, the optical component comprises one or more such layers disposed directly or indirectly on the surface of the waveguide component.

In certain embodiments, the optical component includes one or more such layers disposed between the waveguide component and any other layer that may be included on the waveguide component.

In certain embodiments, the optical component includes one or more such layers disposed between two separate waveguide components (other optional layers may also be included).

In certain embodiments, the optical component comprises a layer comprising the composition according to the invention. In certain embodiments, one or more features are disposed on a surface of the waveguide component.

In certain embodiments, one or more features are embedded in the waveguide component.

In certain embodiments, one feature may have a dimension selected such that the feature covers the entire or a predetermined portion of the surface of the waveguide component.

In certain embodiments, a number of features are disposed on the waveguide component.

In certain embodiments, multiple features are incorporated into the waveguide component.

In certain embodiments, the waveguide component comprises at least one depression, and at least one feature is included in one of the depressions.

In certain embodiments involving multiple features, a portion of the feature may be disposed on a surface of the waveguide component, and a portion of the feature may be embedded in the waveguide component. In certain embodiments, the features are arranged in a predetermined arrangement.

In certain embodiments involving multiple features, each feature may comprise the same or different types of quantum confined semiconductor nanoparticles.

In certain embodiments involving a plurality of features, the plurality of features may be arranged in a pattern. In this particular embodiment, each feature may have the same or similar shape as the feature of the other feature. In this particular embodiment, the features of all features need not be the same or similar.

In certain embodiments involving multiple features, each feature may have the same or similar size dimensions (e.g., length, width, and thickness) as other features. In certain embodiments, the sizes of all features need not be the same or similar.

In certain embodiments, the feature may have a thickness from about 0.1 to about 200 micrometers.

In certain embodiments, features may be spatially dithering.

Dithering or spatial dithering is a term used to describe the use of a small area of a predetermined color palette, for example to provide an illusion of color depth in digital imaging. For example, white is often generated from a mixture of small red, green, and blue zones. In certain embodiments, different types of quantum confined semiconductor nanoparticles disposed on the surface of the waveguide component and / or embedded in the surface of the waveguide component (where each type may emit light of a different color) Using dithering of the composition can produce a ring of different colors. In certain embodiments, a waveguide component that appears to emit white light may be generated from a dithered pattern of features, including, for example, red, green, and blue emitting quantum confined semiconductor nanoparticles. The dithered color pattern is well known. In certain embodiments, the blue light component of the white light may comprise outcoupled unaltered blue excitation light, and / or excitation light downconverted by the quantum confined semiconductor nanoparticles included in the waveguide part, Wherein the nanoparticles comprise a pre-selected composition and size to convert the excitation light down to blue.

In certain embodiments, the white light can be obtained by layering a composition comprising different types of quantum confined semiconductor nanoparticles (based on composition and size), wherein each type has light of a predetermined color .

In certain embodiments, white light can be obtained by including different types of quantum confined semiconductor nanoparticles (based on composition and size) in the impurity material, wherein each type is selected to obtain light with a predetermined color do.

In certain embodiments, the composition comprising the impurity material and the quantum constrained semiconductor nanocrystals is preferably applied to the surface of the waveguide component or embedded in the surface of the waveguide component and then cured. For example, in certain embodiments, the composition can be applied in a molten state that can be cured upon cooling; It may be uv-curable, heat-curable, chemically-curable or other curable, and may be applied to the surface of a waveguide part or the like, or it may be hardened after being embedded on the surface of the waveguide part.

In certain embodiments, the optical component comprises a film comprising a carrier substrate comprising quantum confined semiconductor nanoparticles disposed on a surface thereof, wherein the film is attached to a surface of the waveguide component. In certain embodiments, the film comprises a transcript.

The present disclosure relating to quantum confined semiconductor nanoparticles, compositions comprising quantum confined semiconductor nanoparticles, and applications thereof (e.g., arrangement, thickness, multi-color, etc.) to waveguide components is also disclosed herein The present invention is applied to the carrier substrate and other aspects and embodiments of the present invention.

In certain embodiments, the carrier substrate comprises any one or more additional layers described herein or otherwise contemplated by the disclosure as additional features with waveguide components in various aspects and embodiments of the optical components in accordance with the present invention, structures , Parts or other features.

In certain embodiments, the quantum confined semiconductor nanoparticles are disposed above a predetermined region of the surface of the carrier substrate in a predetermined arrangement. In certain embodiments, the quantum confined semiconductor nanoparticles are included in a layer disposed over a predetermined region of the surface of the carrier substrate. In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions.

In certain embodiments, the carrier substrate may comprise a rigid material, such as glass, polycarbonate, acrylic, quartz, sapphire, or other known rigid material having waveguide component features.

In certain embodiments, the carrier substrate may comprise a flexible material, such as a polymeric material, such as plastic or silicon (including, but not limited to, thin acrylic, epoxy, polycarbonate, PEN, . &Lt; / RTI &gt;

Preferably, at least one, more preferably two, of the major surfaces of the carrier substrate are smooth.

Preferably, the carrier substrate is substantially optically transparent to the light source, more preferably at least 99% optically transparent per mm of waveguide path length.

In certain embodiments, the geometry and dimensions of the carrier substrate may be selected based on a particular end-consuming application. In certain embodiments, the thickness of the carrier substrate is substantially uniform. In certain embodiments, the thickness of the carrier substrate is non-uniform (e.g., increasingly reduced).

Preferably, the carrier substrate comprises a thin flexible component. In certain embodiments, the thickness of the carrier substrate is less than or equal to about 1000 microns. In certain embodiments, the thickness of the carrier substrate is less than or equal to about 500 microns. In certain embodiments, the thickness of the carrier substrate ranges from 10 to about 200 [mu] m.

In certain embodiments, the film comprises a transcript. In certain embodiments, the transfer body is fixedly attachable to a surface. Examples of techniques for fixedly attaching a transcript to a surface include, but are not limited to, permanent adhesive, lamination or other fixed attachment techniques. In certain embodiments, the transcript can be removably attached to a surface or repositioned on a surface. Examples of techniques for removably attaching a transcript to a surface include the use of a low tack adhesive (e.g., 3M Post-it Note adhesive), the use of a static cling-type material as the carrier substrate Use, or other removable attachment techniques. Preferably, the techniques or materials used to attach the transcript to the surface are optically transparent or substantially optically transparent.

In certain embodiments, the underlying filter is disposed between the quantum confined semiconductor nanoparticles (with or without impurity material) and the waveguide components. In certain embodiments, the underlying filter covers at least a predetermined area of the waveguide part under one or more features. Preferably, the underlying filter is capable of passing one or more predetermined wavelengths of light, absorbing other wavelengths or optionally reflecting.

In certain embodiments, the overlying filter material is disposed on the surface of one or more features on the opposite side of the waveguide component. Preferably, the overlying filter can pass one or more predetermined wavelengths of light, absorb other wavelengths, or optionally reflect.

In certain embodiments, the optical component includes multiple filter layers on various surfaces of the waveguide component.

In certain embodiments, the optical component may further include one or more coupling members or structures that allow at least a portion of the light emitted from the light source to be optically coupled to the waveguide component from the light source. Such members or structures may include, for example, attached to the surface of the waveguide component, protruded from the surface of the waveguide component (e.g., prism, grating, etc.), at least partially embedded in the waveguide component, But are not limited to, members or structures.

In certain embodiments, the coupling member or structure may comprise quantum confined semiconductor nanoparticles. In this embodiment, the quantum confined semiconductor nanoparticles can improve the coupling of light to the waveguide component. In these embodiments, the coupling of light to the waveguide component can be particularly improved if such nanoparticles are disposed on the surface, preferably the major surface, of the waveguide component. An example of such an embodiment is schematically shown in Fig. In certain embodiments, such nanoparticles may be included in the composition according to embodiments of the invention described herein.

In certain embodiments of the invention taught herein, for example, outcoupling members or structures may also be included. In certain embodiments, it can be distributed over the surface of the waveguide component or over the top layer of the optical component or film. In certain preferred embodiments, this distribution is uniform or substantially uniform. In certain embodiments, the coupling member or structure may vary in shape, size, and / or frequency to achieve a more uniform light distribution. In certain embodiments, the coupling member or structure may be positive (i.e., placed on the surface of the waveguide) or negative (i.e., recessed to the surface of the waveguide), or a combination of the two. In certain embodiments, one or more features, including compositions comprising imager and quantum constrained semiconductor nanoparticles, may be applied to the surface of the positive coupling member or structure and / or to the interior of the voice coupling member or structure .

In certain embodiments, the coupling member or structure includes, but is not limited to, molding, embossing, lamination, application of a curable formulation (e.g., spraying, lithography, printing (screen, inkjet, (Which is formed by the technique).

In certain embodiments, the quantum confined semiconductor nanoparticles are included in the waveguide component in an amount in the range of about 0.001 to about 15 weight percent, based on the weight of the waveguide component. In certain preferred embodiments, the waveguide component comprises from about 0.01 to about 10 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain more preferred embodiments, the waveguide component comprises from about 0.01 to about 5 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain particularly preferred embodiments, the waveguide component comprises from about 0.1 to about 2 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the quantum confined semiconductor nanoparticles may be distributed within the waveguide component.

In certain embodiments, the quantum confined semiconductor nanocrystals may be distributed in predetermined areas of the waveguide component. In certain embodiments, the distribution of quantum confined semiconductor nanoparticles can be substantially uniform throughout a predetermined region of the waveguide component. In certain embodiments, the concentration of quantum constrained semiconductor nanoparticles over a predetermined region of the waveguide component may be non-uniform (e.g., may be more or less variable).

In certain embodiments, the quantum confined semiconductor nanocrystals can be distributed throughout the entire waveguide component. In certain embodiments, the distribution of quantum confined semiconductor nanoparticles can be substantially uniform throughout the entire waveguide component. In certain embodiments, the concentration of quantum confined semiconductor nanoparticles across the waveguide component may be non-uniform (e.g., may be more or less variable).

In certain embodiments, scatterers are also distributed within the waveguide component. In certain embodiments, the scatterer is included in an amount ranging from about 0.001 to about 15 weight percent of the weight of the waveguide component. In certain embodiments, additional additives may be included within the waveguide component (including, but not limited to, additional surfactants, defoamers).

In certain embodiments, the quantum confined semiconductor nanoparticles are included in a layer disposed over the surface of the waveguide component.

In certain embodiments, the layer has a thickness of from about 0.1 to about 200 micrometers.

In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed.

In certain embodiments, the quantum constrained semiconductor nanoparticles are included in the layer in an amount ranging from about 0.001 to about 15 weight percent of the weight of the impurity. In certain preferred embodiments, the layer comprises from about 0.01 to about 10 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. In certain more preferred embodiments, the layer comprises from about 0.01 to about 5 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material. In certain particularly preferred embodiments, the layer comprises from about 0.1 to about 2 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the impurity material.

In certain embodiments, the impulsive material may comprise a polymer, a monomer, a resin, a binder, a glass, a metal oxide, or other non-polymeric material. Other examples of proprietary materials are described herein. In certain embodiments, the quantum confined semiconductor nanoparticles are uniformly dispersed in the layer. In certain embodiments, the quantum confined semiconductor nanoparticles are non-uniformly dispersed in the layer.

In certain embodiments, scatterers are also included in the layer. In certain embodiments, the scatterer is included in the layer in an amount ranging from about 0.001% to about 15% by weight of the impurity material.

In certain embodiments, the quantum confined semiconductor nanoparticles are contained or dispersed within the impurity particles, vesicles, microcapsules, and the like. These microcapsules may also be prepared using techniques such as those described in "Preparation of lipophilic dye-loaded poly (vinyl alcohol) microcapsules and their characteristics, by Budriene et al., 2002. In certain embodiments, Nanoparticles may be incorporated into particles as described in John R. Linton's U.S. Application No. 61 / 033,729, entitled "Particles Including Nanoparticles, Uses Thereof, and Methods &quot;, filed March 4, Other techniques that can be readily ascertained by those skilled in the relevant arts can be used. Examples of preferred capsule encapsulant systems include PVA and squalane solvents . Microencapsulation is a process in which semiconductor nanoparticles are dispersed in impurities to improve packaging (gas permeability properties) or material properties (refractive index, scattering, etc.) Microencapsulation may also be desirable where handling of individual nanoparticles is not desirable, for example, during processing. These impervious material particles, vesicles, microcapsules, etc. can have various shapes, from spherical to irregular And may range in size from 100 nm to 100 탆 in diameter. Therefore, these particles can be uniformly or non-uniformly distributed throughout the impurity material.

Optionally, other additives (including but not limited to UV absorbers) may be included in the layer.

In certain embodiments, multiple layers comprising quantum confined semiconductor nanoparticles are disposed on the surface of the waveguide component. In certain embodiments, additional additives may be included within the waveguide component (including, but not limited to, additional surfactants, defoamers, and scatterers).

In certain embodiments, the waveguide component comprises a layer comprising quantum confined semiconductor nanoparticles disposed as a patterned layer over a predetermined area of the surface of the waveguide component. In certain preferred embodiments, the layers comprising quantum confined semiconductor nanoparticles are arranged in a predetermined pattern, wherein the quantum confined semiconductor nanoparticles are selected and adjusted to emit one or more predetermined wavelength photons in response to light absorption .

In certain embodiments, the waveguide component comprises a layer comprising quantum confined semiconductor nanoparticles disposed as a non-patterned layer over a predetermined area of the surface of the waveguide component.

In certain embodiments, a film or layer comprising quantum confined semiconductor nanoparticles may be prepared separately from the waveguide component. It can then be bonded or laminated to the surface of the waveguide. The film or layer containing the quantum confined semiconductor nanoparticles can then be cut into a predetermined shape. In certain embodiments, the layer shape can be achieved by die-cutting. Such a film or layer may further comprise a filter above and / or below as part of the film or layer or as another part of the waveguide or optical component.

In certain aspects and aspects of the invention contemplated by the present disclosure, the quantum confined semiconductor nanoparticles have an average particle size in the range of about 1 to about 100 nanometers (nm). In certain embodiments, the quantum confined nanoparticles have an average particle size in the range of about 1 to about 20 nm. In certain embodiments, the quantum confined semiconductor nanoparticles have an average particle size in the range of about 2 to about 10 nm.

Preferably, the ligand is attached to the surface of at least a portion of the quantum confined semiconductor nanoparticles.

In certain aspects and aspects of the invention contemplated by the present disclosure, including quantum confined semiconductor nanoparticles, at least some of the quantum confined semiconductor nanoparticles have at least some of the wavelengths of light coupled to the waveguide component from the light source It is possible to switch to one or more predetermined wavelengths.

In certain aspects and aspects of the invention contemplated by the present disclosure, including quantum confined semiconductor nanoparticles, the quantum confined semiconductor nanoparticles comprise semiconductor nanocrystals. In certain embodiments, the quantum confined semiconductor nanoparticles comprise semiconductor nanocrystals comprising a core / shell structure.

In certain preferred embodiments and aspects of the present invention contemplated by the present disclosure, including waveguide components, the waveguide component is transparent to light emitted from the light source to the waveguide component and to light emitted by the quantum confined semiconductor nanoparticles. Do.

In certain aspects and aspects of the present invention contemplated by the present disclosure, including waveguide components, the waveguide component may comprise a rigid material, such as glass, polycarbonate, acrylic, quartz, sapphire, or other And may include known rigid materials.

In certain aspects and aspects of the present invention contemplated by the present disclosure, including waveguide components, the waveguide component may alternatively include a flexible material, such as a polymeric material such as plastic or silicon (e.g., thin acrylic, But are not limited to, epoxy, polycarbonate, PEN, PET, PE).

In certain aspects and aspects of the invention contemplated by the present disclosure, including waveguide components, the waveguide component is planar.

In particular aspects and aspects of the present invention contemplated by the present disclosure, including waveguide components, at least the texture of the surface of the waveguide component from which light is emitted enhances or otherwise enhances the pattern, Is selected to change. For example, in certain embodiments, the surface can be smooth; In certain embodiments, the surface may not be smooth (e.g., the surface is rough or comprises one or more raised and / or recessed features); In certain embodiments, the surface may include both smooth and non-smooth areas.

In certain aspects and aspects of the present invention contemplated by the present disclosure, the geometry and dimensions of the waveguide part and / or optical part may be selected based on a particular end-consumer application. In certain embodiments, the thickness of the waveguide component can be substantially uniform. In certain embodiments, the thickness of the waveguide can be non-uniform (e.g., increasingly reduced).

In certain aspects and aspects of the invention contemplated by this disclosure, more than 0.1% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 10% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 20% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 30% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 40% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 50% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 60% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 70% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 80% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles. In certain embodiments, more than 90% of the light coupled to the waveguide component from the light source is absorbed and re-emitted by the quantum confined semiconductor nanoparticles.

In certain aspects and aspects of the present invention contemplated by the present disclosure, optical components include thin flexible components. In certain embodiments, the thickness of the optical component is less than about 1000 microns. In certain embodiments, the thickness of the component is less than about 500 microns. In certain embodiments, the thickness of the component ranges from 10 to about 200 [mu] m.

In certain embodiments, the optical component further comprises coupling means for coupling light from the light source through the edge of the waveguide component. Examples of light sources include, but are not limited to, those listed below. In certain embodiments, more than one coupling means may be included to couple more than one light source to the waveguide component.

According to another aspect of the present invention, there is provided a system comprising a light source optically coupled to an optical component and a waveguide component in accordance with the present invention. In certain embodiments, the waveguide component comprises between about 0.001 and about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the waveguide component comprises about 0.01 to about 10 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the waveguide component comprises about 0.01 to about 5 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the waveguide component comprises from about 0.1 to about 2 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the waveguide component. In certain embodiments, the quantum confined semiconductor nanoparticles are included in the impurity material. In certain embodiments, the quantum confined semiconductor nanoparticles are included in a composition according to the present invention. In certain embodiments, the quantum confined semiconductor nanoparticles are included in one or more predetermined arrays on a predetermined area of the surface of the waveguide component intended as the viewing surface.

Examples of light sources include solid state light emitting devices (e.g., electroluminescent devices or thin film electroluminescent devices TFEL (e.g., Durel and Luminus Films, http://www.luminousfilm.com/el_lamp (e. g., inorganic LEDs, such as inorganic semiconductor LEDs, which are well known in the art and available from numerous sources), which are available from numerous sources including, but not limited to. But are not limited to, solid state lasers or other known solid state lighting devices), gas discharge lamps (e.g., fluorescent lamp CCFL, sodium vapor lamp, metal halide lamp, high pressure mercury lamp, CRT) . The light source is well known and available from a number of sources. The light source may emit in the visible or invisible (e.g., infrared, ultraviolet, etc.) regions of the electromagnetic spectrum.

In certain embodiments, the system may include a single light source.

In certain embodiments, the system may include multiple light sources.

In certain embodiments that include multiple light sources, the individual light sources may be the same or different.

In certain embodiments that include multiple light sources, each individual light source may emit light having a wavelength equal to or different from the wavelength emitted by each of the different light sources.

In certain embodiments that include multiple light sources, the individual light sources may be arranged as an array.

In certain embodiments that include multiple light sources, the individual light sources may be optically coupled to introduce light into the same or different regions of the waveguide component.

In certain embodiments, the light source comprises a blue LED (e.g., (In) GaN blue) or a UV LED.

In certain embodiments, the light source or light source array is optically coupled to the edge of the waveguide component.

In one embodiment, the system may include two or more inventive optical components. These optical components are preferably arranged so that each waveguide component (preferably constructed from glass or other optically transparent material) is parallel to the waveguide component of each of the other optical components, and each optical component is coupled to a separate light source . The optical components are preferably separated from each other such that there is no "optical communication" between the optical components. This separation can be achieved by pores due to physical spacing between parts or by a layer of low refractive index material. Two or more optical components may be mounted on a single base or frame or multiple bases or frames. Each waveguide may comprise one or more predetermined arrays of quantum confined semiconductor nanoparticles with predetermined emission characteristics. The arrangement (s) of quantum confined semiconductor nanoparticles included in each optical component or included on each optical component may be the same as or different from those of the other optical components. The light sources may be programmed or otherwise modified to be lit at the same time or on a time-based basis. For example, in a signage application, each optical component included in the system may have different images (e.g., logos, text, drawings, photographs, various combinations of the above, or other predetermined arrangements). Preferably, the amount and thickness of the quantum confined semiconductor nanoparticles included in the array on one or all of the optical components is such that the array portion is substantially transparent to the viewer in the event that the optically coupled light source is not operating Is selected. In certain embodiments that include two or more optical components, the optical components may be positioned to have different orientations. For example, one may be positioned so as to be intended to appear in a first orientation, and the other is intended to appear in a second orientation, e.g., a 90 degree rotation from the first orientation.

In a particular signaling embodiment, the waveguide component may comprise a window or other structural, decorative, architectural or other structure or element fabricated from a material having waveguiding capability, wherein the predetermined The arrangement is applied as contemplated by the present disclosure in accordance with the present disclosure, and the light is coupled from the light source as also contemplated herein. If not optically excited by the guided light from one or more light sources, as is particularly advantageous in certain applications, the predetermined arrangement is substantially non-emissive and substantially transparent (< 0.1 Abs unit) under ambient conditions.

According to another aspect of the present invention there is provided a kit comprising a light source and one or more films adapted to optically couple to a waveguide component wherein the at least one film comprises quantum confined semiconductor nanoparticles And a carrier substrate. In certain embodiments, the quantum confined semiconductor nanoparticles are disposed in a predetermined arrangement. In certain embodiments, the film comprises from about 0.001 to about 15 weight percent of the quantum confined semiconductor nanoparticles, based on the weight of the film. In certain embodiments, the at least one film comprises a transcript. In certain embodiments, the kit further comprises a waveguide component.

In certain embodiments, the geometry and dimensions of the carrier substrate of the transfer body or other film may be selected on the basis of a particular end-consumer application. In certain embodiments, the thickness of the carrier substrate is substantially uniform. In certain embodiments, the thickness of the carrier substrate may be non-uniform (e.g., increasingly reduced).

Preferably, the carrier substrate comprises a thin flexible component. In certain embodiments, the thickness of the carrier substrate is less than or equal to about 1000 microns. In certain embodiments, the thickness of the carrier substrate is less than or equal to about 500 microns. In certain embodiments, the thickness of the carrier substrate ranges from 10 to about 200 [mu] m.

In certain embodiments, the light source (s) is adapted to couple light to the waveguide component. For example, one or more light sources (e.g., one or more lamps, LEDs, or other illumination devices) may be mounted on a structural member adapted to be fixed or removably attached to the surface of the waveguide component to couple light to the waveguide component . In certain embodiments, the structural member positions one or more light sources included therein such that light coupled to the waveguide component does not substantially pass directly through the surface of the waveguide component on which the quantum confined semiconductor nanoparticles are disposed. In this embodiment, the light emitted from the surface is absorbed by the nanoparticles and re-emitted. In certain embodiments where light is coupled to the surface of the waveguide component in which the nanoparticles are disposed, the angle that light directs to the surface of the waveguide component is greater than the critical angle (e.g., 42 degrees for glass / air) not. In certain embodiments, the structural member comprises a prism having a triangular cross section (preferably 30-60-90 triangles) optically coupled to the waveguide component.

Figure 5 schematically illustrates an example of various embodiments of the present invention. A light pipe or waveguide (which may be a waveguide component or member with waveguiding capability) includes quantum confined semiconductor nanoparticles disposed on its surface. In certain embodiments, nanoparticles may be included in the compositions taught herein. In certain embodiments, the nanoparticles may be included on a film as taught herein attached to a light pipe. In the illustrated example, the light source is positioned to couple light to the surface of the light pipe where the nanoparticles are disposed. In the illustrated example in which the access to the edge of the light pipe may not be accessible to avoid direct passage of light through the light pipe, the structural member comprising the prism may have a critical angle exceeding the critical angle And is used as a means for positioning the light source at an angle that does not exist.

In certain embodiments, nanoparticles or films may be disposed on the surface of the light pipe. In certain embodiments, other layers or structures may be located therebetween.

In certain embodiments, the kit may include other light sources, films, quantum confined semiconductor nanoparticles, waveguide components, compositions, etc., as described herein.

According to another aspect of the present invention there is provided a method of manufacturing a semiconductor light emitting device comprising applying a film according to the present invention to a surface of a member and optically exciting the quantum confined semiconductor nanoparticles containing light directly or indirectly on the carrier substrate, Wherein the method comprises the steps of: In certain embodiments, the members comprise windows (any kind of building, vehicle) or other structural, decorative, architectural or other structure or element made from a material with waveguiding capabilities. In certain embodiments, the film comprises a transcript.

In certain embodiments, the method includes applying a film according to the present invention to a surface of an optically transparent material having photoconductivity capability and irradiating the quantum confined semiconductor directly or indirectly onto the carrier substrate, And coupling the light to the surface or edge of the member to optically excite the nanoparticles. In certain embodiments, the member may be a window (any kind of building, vehicle) or other structural, decorative, architectural or other article or element made from an optically transparent material or substantially optically transparent material with guiding capability . The predetermined arrangement on the film may comprise a patterned or non-patterned arrangement. In certain embodiments, the film comprises a transcript.

According to another aspect of the present invention there is provided a TFEL lamp comprising quantum confined semiconductor nanoparticles disposed on a surface of a lamp. In certain embodiments, the quantum confined semiconductor nanoparticles are disposed in a predetermined arrangement. In certain embodiments, the quantum confined semiconductor nanoparticles are included in a layer disposed over the surface of the lamp. In certain embodiments, the layer covers the entire luminescent surface of the lamp.

In certain embodiments, the quantum confined semiconductor nanoparticles included in the layer are arranged in one or more predetermined alignment portions. In certain embodiments, the layer further comprises an impurity material in which quantum confined semiconductor nanoparticles are distributed.

In certain embodiments, the quantum confined semiconductor nanoparticles are included in the impurity material in an amount ranging from about 0.001% to about 15% by weight of the impurity material. Preferably, the impulsive material comprises a solid (as opposed to a liquid) material.

In certain embodiments, the scatterer is further included in the host material.

In certain embodiments, the TFEL lamp comprises a film according to the present invention. In certain embodiments, the film comprises a transcript attached to the surface of the lamp. In certain embodiments, the transcript is laminated to the lamp structure. In certain embodiments, the transcript is included in the lamp structure before the lamp is packaged or encapsulated. In certain embodiments, one or more filter layers are included below and / or above the quantum confined semiconductor nanoparticles. Other layers and / or features may also be included on the lamp and / or in the film. In certain embodiments, the film comprises a transcript. In certain embodiments, the underlying filter is disposed between the surface of the TFEL lamp and the quantum confined semiconductor nanoparticles (including or not included in the impurity material). In certain embodiments, the underlying filter covers all or at least one predetermined area of the TFEL lamp under one or more features. Preferably, the underlying filter is capable of passing one or more predetermined wavelengths of light, absorbing other wavelengths or optionally reflecting.

In certain embodiments, the overlying filter material is disposed on the surface of one or more features on the opposite side of the TFEL lamp. Preferably, the overlying filter can pass one or more predetermined wavelengths of light, absorb other wavelengths, or optionally reflect.

In certain embodiments, multiple filter layers are included.

In certain embodiments, the TFEL lamp may further comprise at least one coupling member or structure that allows at least a portion of the light emitted from the lamp to be optically coupled to the nanoparticle from the lamp. Such members or structures include, for example, a member or structure that is attached to the surface of a TFEL lamp, protrudes from the surface of the TFEL lamp (e.g., a prism), or is at least partially embedded in the surface of the lamp on which the nanoparticles are disposed But are not limited thereto. In certain embodiments, for example, the coupling member or structure may be distributed over the surface of the lamp. In certain preferred embodiments, this distribution is uniform or substantially uniform. In certain embodiments, the coupling member or structure may vary in shape, size, and / or frequency to achieve a more uniform light distribution outcoupled from the surface. In certain embodiments, the coupling member or structure may be positive (i.e., resting on the surface of the lamp) or negative (i.e., recessed to the surface of the lamp) or a combination of the two. In certain embodiments, one or more features, including compositions comprising imager and quantum constrained semiconductor nanoparticles, may be applied to the surface of the positive coupling member or structure and / or within the voice coupling member or structure.

Figure 6 schematically illustrates an example of various embodiments of a TFEL lamp in accordance with the present invention. A TFEL lamp comprising quantum confined semiconductor nanoparticles disposed on a surface is displayed. In certain embodiments, nanoparticles may be included in the compositions taught herein. In certain embodiments, the nanoparticles may be included on a film as taught herein attached to a surface of a lamp. In the illustrated example, the overlying filter is disposed over a portion of the layer of nanoparticles. In the figure, the uncoated portion of the lamp is marked as producing blue light emission; The lamp light passing through the portion of the nanoparticle layer not covered by the overlying filter comprises red and blue light emission; The lamp light passing through the portion of the nanoparticle layer covered by the overlying filter comprises red light emission. Different color light output can be achieved by different filter selection and nanoparticle size and composition.

According to yet a further aspect of the invention, various applications and devices are provided, including optical components and / or systems in accordance with the present invention. Examples include, but are not limited to, user-interface lighting, solid-state lighting, and displays. Numerous examples of user-interface illumination are described in U.S. Patent No. 6,422,712, which is incorporated herein by reference in its entirety.

Quantum confined semiconductor nanoparticles can be used for various devices including, but not limited to, light emitting devices, solid state lighting, displays, photodetectors, other lighting components, nonvolatile memory devices, solar cells, sensors, photovoltaic devices, And features and characteristics that make them particularly suitable for use in consumer applications.

Certain aspects and embodiments of the invention taught herein may be found in Peter T. Kazlas's U.S. patent application entitled "Quantum Dot-Based Light Sheets for Solid State Lighting" filed on July 18, 2007, May be advantageously included in a solid state lighting device including, but not limited to, those disclosed in Application Serial No. 60 / 950,598, the disclosure of which is incorporated herein by reference. Certain aspects and embodiments of the present invention as taught herein are described in co-pending US patent application Ser. Nos. Seth (Seth), entitled " Solar Cells Including Quantum Dot Down-Conversion Materials for Photovoltaics and Materials Including Quantum Dots, &quot; filed June 26, Coe-Sullivan et al., U.S. Serial No. 60 / 946,382, which is incorporated herein by reference in its entirety. Certain aspects and embodiments of the present invention as taught herein may be advantageous for inclusion in other types of electronic or optoelectronic devices.

In certain embodiments, the display comprises a light source coupled to an optical component and an optical component in accordance with the present invention. Examples of light sources include, but are not limited to, EL lamps, TFEL lamps, LEDs, fluorescent lamps, high pressure discharge lamps, tungsten halogen lamps, lasers, and arrays of any of the above. In certain embodiments, the optical components may be retro-illuminated (backlit), front-illuminated (frontal illuminated), edge-illuminated (framed), or the light from the illuminant may be transmitted through the optical components to produce a display image or indicia And has other designated coordinates. In certain aspects and embodiments of the invention contemplated by the present disclosure, the quantum confined semiconductor nanoparticles comprise semiconductor nanocrystals, wherein at least a portion of the semiconductor nanocrystals comprises one or more ligands attached to its surface do.

In certain aspects and embodiments of the present invention contemplated by the present disclosure, compositions according to embodiments of the present invention may include UV absorbers, dispersants, leveling agents, viscosity modifiers, colorants (e.g., dyes) , Fillers, extenders, and the like, and mixtures thereof.

In certain aspects and embodiments of the present invention contemplated by this disclosure, compositions according to embodiments of the present invention do not include phosphorus particles.

In certain preferred embodiments, the composition according to the present invention can be prepared, for example, from an ink comprising a quantum constrained semiconductor nanoparticle and a liquid vehicle, wherein the liquid vehicle is polymerized to form a fugitive material (e.g., Crosslinking). &Lt; / RTI &gt; In certain embodiments, the functional units may be crosslinked by UV treatment. In certain embodiments, the functional units may be crosslinked by thermal treatment. In certain embodiments, the functional units may be crosslinked by other crosslinking techniques readily identifiable by those skilled in the relevant art. In certain embodiments, a composition comprising one or more functional groups that can be crosslinked can be a liquid vehicle itself. In certain embodiments, the impregnant is solidified from the liquid vehicle by solvent removal from the resin in solution.

No. 60 / 946,090 to Linton et al., Entitled "Methods For Depositing Nanomaterials, Methods For Fabricating An Array Of Devices And Compositions" filed June 25, 2007, And Linton et al., Entitled "Compositions, Methods For Fabricating An Array Of Devices, " filed July 12, 2007, / 949,306, the disclosures of which are incorporated herein by reference. Optionally, the ink further comprises scatterers and / or other additives.

In certain embodiments, the optical component can be a top or bottom surface or other component of a light emitting device, a display, another type of lighting device or unit, a waveguide, or the like.

In certain embodiments, the film, waveguide component, or optical component may optionally include one or more additional layers and / or elements. In one embodiment, for example, the optical component may further comprise one or more distinct layers comprising scatterers. The layer comprising the scatterer may be disposed on and / or below any layer or other arrangement of quantum confined semiconductor nanoparticles contained on the film or waveguide component or directly or indirectly to the optical component The layer or other arrangement of confined semiconductor nanoparticles may or may not further include scatterers and / or other additives or materials). In certain embodiments of a film, waveguide, or optical component comprising two or more stacked layers or other arrangements comprising quantum constrained semiconductor nanoparticles, the one or more layers comprising the scatterer may comprise any Layer or between all layers. Examples of scatterers are provided herein. In certain embodiments, the layer comprising the scatterer may be patterned or unpatterned. In various embodiments and aspects of the invention contemplated by the present disclosure, the quantum confined semiconductor nanoparticles comprise semiconductor nanocrystals. Semiconductor nanocrystals make it particularly suitable for use in various devices and other end-consuming applications including, but not limited to, light emitting devices, displays, photodetectors, non-volatile memory devices, solar cells, sensors, photovoltaic devices, Features and characteristics.

In certain aspects and embodiments of the present invention contemplated by the present disclosure, reflective components such as reflective films, aluminum-plated coatings, surface relief features, brightness enhancing films, and other components capable of re- . &Lt; / RTI &gt; The waveguide component or film may also contain a non-scattering region, such as a substrate.

Examples of optical coupling methods include, but are not limited to, a coupling method in which two regions coupled together have a similar index of refraction, or a method of using an optical adhesive having a refractive index substantially near or intermediate to the region or layer . The optical coupling can also be achieved by a gap between the light source and the waveguide component. Other non-limiting examples of optical coupling include lamination using an index-matched optical adhesive, coating an area or layer on another area or layer, or connecting two or more layers or areas having a substantially similar refractive index Includes high temperature laminates using pressurized pressures. Thermal transfer is another method that can be used to optically couple two regions of a material.

1 and 2 provide a schematic diagram of an example of a specific embodiment of a system comprising an optical component and a light source according to the present invention.

In the illustrated example, the optical component comprises a waveguide component 1 and a layer comprising semiconductor nanocrystals disposed on the major surface of the waveguide component. In certain embodiments, the layer comprising quantum constrained semiconductor nanoparticles (preferably semiconductor nanocrystals) may further comprise an impurity material in which quantum confined semiconductor nanoparticles are optionally dispersed. This dispersion can be uniform or non-uniform. In the illustrated example, the light source is optically coupled to the waveguide component by being bonded to the edge of the waveguide component. Other methods of coupling the light source to the waveguide component include incorporating the light source into the waveguide component, or coupling the light source to the surface of the waveguide through a feature, grating, or prism.

As the semiconductor nanocrystals have narrow emission linewidths effective for photoluminescence and nanocrystals size and / or emission wavelengths that are adjustable by the composition, this can be used for various aspects and embodiments of the present invention contemplated by this disclosure desirable.

Since the size of the semiconductor nanocrystals is in the range of 1.2 nm to 15 nm, the coating containing the semiconductor nanocrystals and containing no scattering particles may be substantially transparent. Coatings containing other down conversion particles, such as phosphorus, with a particle size of 1 [mu] m to 50 [mu] m are cloudy or opaque (depending on particle concentration).

The size and composition of the quantum confined semiconductor nanoparticles (including, for example, semiconductor nanocrystals) allows the semiconductor nanocrystals to emit photons of predetermined wavelengths or wavelength bands in the source visible, visible, infrared, or other desired regions of the spectrum Lt; / RTI &gt; For example, the wavelength may be 300 to 2,500 nm or more, such as 300 to 400 nm, 400 to 700 nm, 700 to 1100 nm, 1100 to 2500 nm, or more than 2500 nm.

Quantum confined semiconductor nanoparticles can be dispersed in a liquid medium and are therefore compatible with thin film deposition techniques such as spin-casting, drop-casting, phase separation and dip coating. Quantum confined semiconductor nanoparticles can be deposited by ink-jet printing, silk-screening, and other liquid film techniques that can be used to form patterns on a surface.

Ink containing quantum confined semiconductor nanoparticles dispersed in a liquid medium may also be deposited on the surface of the waveguide or other substrate or surface by printing, screen-printing, spin-coating, gravure techniques, inkjet printing, have. The ink can be deposited in a predetermined arrangement. For example, the ink may be deposited in a patterned or non-patterned array. For additional information that may be useful for depositing ink on a substrate, see, for example, "Methods For Depositing Nanomaterial, Methods For Fabricating A Device, And Methods For Fabricating An Array Of Devices " filed June 25, 2007 International Patent Application No. PCT / US2007 / 014711 of Seth A. Coe-Sullivan, entitled "Methods For Depositing Nanomaterial, Methods For Fabricating A Device, " filed on June 25, 2007, Seth A. Coe-Sullivan et al., PCT / US2007 / 014705, filed June 25, 2007, entitled "Methods for Fabricating An Array Of Devices And Compositions" International Patent Application No. PCT / US2007 / 014706 by Seth A. Coe-Sullivan et al., "Composition Including Material, Methods," filed on April 9, 2007, Of Depositing Material, Articles Including Same And Systems For Depositing Material " International Patent Application No. PCT / US2007 / 08873 by Seth A. Coe-Sullivan et al., Entitled "Methods Of Depositing Material, International Patent Application No. PCT / US2007 / 09255, filed on April 9, 2007, entitled "Methods And Articles Including Nanomaterial ", by Maria J, International Patent Application No. PCT / US2007 / 08705, filed on April 9, 2007, entitled "Methods Of Depositing Nanomaterial & Methods Of Making A Device ", by Seth Coe-Sullivan et al. Seth Coe-Sullivan on International Patent Application No. PCT / US2007 / 08721, filed on October 20, 2005, entitled "Method And System For Transferring A Patterned Material, " And U.S. Patent Application Serial No. 11 / 253,612, filed October 20, 2005, entitled "Light Emitting Device Including Semiconductor Nanocrystals & A nose - see U.S. Patent Application No. 11/253 595, such as call Sullivan (Seth Coe-Sullivan), and the patent application are incorporated by reference herein, respectively.

For additional information on contact printing, see, for example, &lt; RTI ID = 0.0 &gt; A. &lt; / RTI &gt; Kumar and G. Whitesides, Applied Physics Letters, 63, 2002-2004, (1993); And [V. Santhanam and R. P. Andres, Nano Letters, 4, 41-44, (2004), each of which is incorporated herein by reference in its entirety.

Ink-based deposition techniques may be used for depositing quantum confined semiconductor nanoparticles of various thicknesses. In certain embodiments, the thickness is thereby selected to achieve the desired percent absorption. Examples of the desired percent absorptions include but are not limited to from about 0.1% to about 99%, from about 10% to about 90%, from about 10% to about 50%, from about 50% to about 90%. Preferably, the quantum confined semiconductor nanoparticles absorb at least a portion of the impinging light and re-emit at least a portion of the absorbed light energy as one or more photons of the predetermined wavelength (s). Most preferably, the quantum confined semiconductor nanoparticles do not absorb or only absorb negligible amounts of any re-emitted photons.

In certain embodiments, a composition comprising quantum confined semiconductor nanoparticles is applied to a predetermined region (also referred to as a predetermined region) on a waveguide or other substrate. The predetermined area is the area on the substrate to which the composition is selectively applied. The composition and substrate may be selected such that the material remains substantially entirely within the predetermined area. By selection of a predetermined area to form the pattern, the composition can be applied to the substrate such that the material forms a pattern. The pattern may be a regular pattern (e.g., an array or a series of lines) or an irregular pattern. When a pattern of the composition is formed on the substrate, the substrate may have a region containing the substance (predetermined region) and a region substantially not containing the composition. In some circumstances, the composition forms a monolayer thickness of nanoparticles on a substrate. The predetermined area may be a discontinuous area. In other words, where the composition is applied to a predetermined area of the substrate, the location containing the composition may be separated by another location that is substantially free of the composition.

By placing quantum confined semiconductor nanoparticles in the feature or layer obtained from these deposition techniques, the entire surface of the nanoparticles is not available for absorbing and emitting light.

Alternatively, the quantum confined semiconductor nanoparticles can be formed as a whole layer or a partial layer by any of the techniques listed above or other known techniques, or as a light transmissive material (e.g., a polymer, a resin Such as silica glass or silica gel, which is preferably at least partially light-transmissive and more preferably transparent to light emitted by the quantum confined semiconductor nanoparticles, where the quantum confined semiconductor nanoparticles can be dispersed Lt; / RTI &gt; Suitable materials include many inexpensive, commonly available materials such as polystyrene, epoxy, polyimide, and silica glass.

In certain embodiments, such material may contain a dispersion of quantum confined semiconductor nanoparticles having a size selected to produce light of a color provided under photoexcitation. Other arrangements of quantum confined semiconductor nanoparticles disposed in a material, such as a two-dimensional layer on a substrate having a polymer overcoat, are also contemplated.

In certain embodiments where the quantum confined semiconductor nanoparticles are dispersed in the impurity material and applied as a layer on the surface of the waveguide component, the refractive index of the layer comprising the quantum confined semiconductor nanoparticles may be greater than or equal to the refractive index of the waveguide component.

In certain embodiments where the quantum confined semiconductor nanoparticles are dispersed in the impurity material and applied as a layer on the surface of the waveguide component, the refractive index of the layer comprising the quantum confined semiconductor nanoparticles may be less than the refractive index of the waveguide component.

In certain embodiments, a reflective material can be applied to the edge of the waveguide component to enhance the internal reflection of light within the waveguide component.

In certain embodiments, a reflective material is applied to the surface of the waveguide component opposite to where the layer comprising the quantum confined semiconductor nanoparticles is disposed to improve the internal reflection of light in the waveguide component, as well as to reduce the emission from the semiconductor nanoparticle You can reflect to the viewer.

In embodiments of the present invention that include a layer comprising quantum confined semiconductor nanoparticles on the surface of the waveguide component, the optical component may optionally be protected from environmental (e.g., dust, moisture, etc.) and / or from scratching or abrasion Coating, or layer on at least a portion of the surface on which the layer comprising the quantum confined semiconductor nanoparticles is disposed.

In certain embodiments, the optical component may further comprise a lens, a prismatic surface, a grating, etc. on the surface from which the light is emitted. Antireflective, polarizing and / or other coatings may also optionally be included on these surfaces.

The invention will be further clarified by the following examples, which are intended as illustrations of the invention.

<Examples>

Example 1

Production of semiconductor nanocrystals capable of emitting green light:

Synthesis of ZnSe core: 0.69 mmol of diethylzinc was dissolved in 5 mL of tri-n-octylphosphine and mixed with 1 mL of 1 M TBP-Se. Oleylamine 28.9 mmol was loaded in a cedar flask, dried and degassed at 90 &lt; 0 &gt; C for 1 hour. After degassing, the flask was heated to 310 DEG C under nitrogen. When the temperature reached 310 캜, a Zn solution was injected and the reaction mixture was heated at 270 캜 for 15 to 30 minutes while periodically removing an aliquot of the solution to monitor the growth of the nanocrystals. When the first absorption peak of the nanocrystals reached 350 nm, the reaction was stopped by lowering the flask temperature to 160 캜 and used without further purification for the preparation of the CdZnSe core.

Synthesis of CdZnSe core: 1.12 mmol of dimethylcadmium was dissolved in 5 mL of tri-n-octylphosphine and mixed with 1 mL of 1 M TBP-Se. In a dark wood flask, 41.38 mmol of trioctylphosphine oxide and 4 mmol of hexylphosphonic acid were loaded, dried and degassed at 120 ° C for 1 hour. After degassing, the oxide / acid was heated to 160 占 폚 under nitrogen, and 8 ml of the ZnSe core growth solution was transferred to the flask at 160 占 폚 and immediately thereafter the Cd / Se solution was added via the syringe pump over 20 minutes. The reaction mixture was then heated at 150 ° C for 16-20 hours while periodically removing an aliquot of the solution to monitor the growth of the nanocrystals. When the emission peak of the nanocrystal reaches 500 nm, the reaction is stopped by cooling the mixture to room temperature. The CdZnSe core was precipitated from the growth solution inside a nitrogen atmosphere glove box by adding a 2: 1 mixture of methanol and n-butanol. The isolated core was then dissolved in hexane and used to prepare the core-shell material.

Synthesis of CdZnSe / CdZnS core-shell nanocrystals: 25.86 mmol of trioctylphosphine oxide and 2.4 mmol of benzylphosphonic acid were loaded into a pastry flask. The mixture was then dried and degassed in the reaction vessel by heating to 120 &lt; 0 &gt; C for about 1 hour. The flask was then cooled to 75 DEG C and a hexane solution containing the isolated CdZnSe core (0.1 mmol Cd content) was added to the reaction mixture. The hexane was removed under reduced pressure. Dimethylcadmium, diethylzinc and hexamethyldisilathane were used as Cd, Zn and S precursors, respectively. Cd and Zn were mixed in an equimolar ratio, and S was mixed in a 2-fold excess with respect to Cd and Zn. Cd / Zn and S samples were respectively dissolved in 4 mL of trioctylphosphine in a nitrogen atmosphere glove box. Once the precursor solution was prepared, the reaction flask was heated to 150 占 폚 under nitrogen. The precursor solution was added dropwise at 150 &lt; 0 &gt; C for 2 hours using a syringe pump. After shell growth, the nanocrystals were transferred to a nitrogen atmosphere glove box and precipitated from the growth solution by adding a 3: 1 mixture of methanol and isopropanol. The isolated core-shell nanocrystals were then dissolved in hexane and used to prepare compositions comprising quantum constrained semiconductor nanoparticles and impurity materials.

Example 2

Manufacture of semiconductor nanocrystals capable of emitting red light

Synthesis of CdSe core: 1 mmol of cadmium acetate was dissolved in 8.96 mmol of tri-n-octylphosphine in a 20 mL vial at 100 &lt; 0 &gt; C, then dried and degassed for 1 hour. 15.5 mmol of trioctylphosphine oxide and 2 mmol of octadecylphosphonic acid were added to the cedar flask, dried and degassed at 140 ° C for 1 hour. After degassing, the Cd solution was added to the oxide / acid flask and the mixture was heated to 270 DEG C under nitrogen. When the temperature reached 270 캜, 8 mmol of tri-n-butylphosphine was injected into the flask. After the temperature was returned to 270 DEG C, 1.1 mL of 1.5 M TBP-Se was rapidly injected. The reaction mixture was heated at 270 &lt; 0 &gt; C for 15-30 minutes while periodically removing an aliquot of the solution to monitor the growth of the nanocrystals. When the first absorption peak of the nanocrystals reached 565 to 575 nm, the reaction was stopped by cooling the mixture to room temperature. CdSe cores were precipitated from the growth solution in a nitrogen atmosphere glove box by adding a 3: 1 mixture of methanol and isopropanol. The isolated core was then dissolved in hexane and used to prepare the core-shell material.

Synthesis of CdSe / CdZnS core-shell nanocrystals: 25.86 mmol of trioctylphosphine oxide and 2.4 mmol of octadecylphosphonic acid were loaded into a pastry flask. The mixture was then dried and degassed in the reaction vessel by heating to 120 &lt; 0 &gt; C for about 1 hour. The flask was then cooled to 75 DEG C and a hexane solution containing the isolated CdSe core (0.1 mmol Cd content) was added to the reaction mixture. After removing the hexane under reduced pressure, 2.4 mmol of 6-amino-1-hexanol was added to the reaction mixture. Dimethylcadmium, diethylzinc and hexamethyldisilathane were used as Cd, Zn and S precursors, respectively. Cd and Zn were mixed in an equimolar ratio, and S was mixed in a 2-fold excess with respect to Cd and Zn. Cd / Zn and S samples were respectively dissolved in 4 mL of trioctylphosphine in a nitrogen atmosphere glove box. Once the precursor solution was prepared, the reaction flask was heated to 155 占 폚 under nitrogen. The precursor solution was added dropwise at 155 占 폚 over 2 hours using a syringe pump. After shell growth, the nanocrystals were transferred to a nitrogen atmosphere glove box and precipitated from the growth solution by adding a 3: 1 mixture of methanol and isopropanol. The isolated core-shell nanocrystals were then dissolved in hexane and used to prepare compositions comprising quantum constrained semiconductor nanoparticles and impurity materials.

Preparation of a layer comprising semiconductor nanocrystals:

Samples containing semiconductor nanocrystals prepared substantially in accordance with one of the previously described examples were housed in hexane (the sample typically represents approximately 40 mg of solid dispersed in 10 to 15 ml of hexane). Hexane was removed from the dots at room temperature under vacuum. And was careful not to dry or remove all solvents completely. 0.5 ml of a proprietary, low viscosity reactive diluent (from RD-12, Radcure Corp, Fairfield, OH, USA 07004-3401, New York, NJ) was added to the semiconductor nanocrystals with stirring. After semiconductor nanocrystals were pre-solubilized in a reactive diluent, 2 ml of a proprietary UV-curable acrylic formulation (also from Radcure) was added dropwise with vigorous stirring. Sometimes, the mixing vial was heated with stirring to a lower viscosity. After the addition was complete, vacuum was applied to remove entrained air and residual solvent. Thereafter, the vial was placed in an ultrasonic bath (VWR) for 1 hour to overnight to obtain a transparent colored solution. Care was taken to avoid the temperature exceeding 40 DEG C while placing the sample in an ultrasonic bath.

Multiple batches of semiconductor nanocrystals of the same color in UV curable acrylic were mixed together. In the case of the following samples, the three red batches listed in Table 1 were added together and then the four green batches listed in Table 1 were added together.

The sample was coated on a glass slide previously cleaned with a Mayer rod and a 5000-EC UV light curing flood from a DYMAX Corporation system equipped with an H-bulb (225 mW / cm2) And cured in a lamp (Light Curing Flood Lamp) for 10 seconds.

A sample comprising multiple layers to achieve the desired thickness was cured between layers. The sample comprising the filter at the top (or bottom) of the layer comprising the impurity material and the quantum confined semiconductor nanoparticles had a filter coated by the Meyer rod in a separate step. Filters were prepared by blending UV-curable pigment ink formulations from Coates / Sun Chemical (examples include but are not limited to DXT-1935 and WIN99). The filter composition was formulated by adding together the weighted absorbency of the individual colors to achieve the desired permeability characteristics.

The films were characterized by the following method:

Thickness: measured in micrometers

Measured emission measurements for each type of sample 1 on a Cary Eclipse

Excitation at 450 nm, 2.5 nm excitation slit, 5 nm emission slit.

Absorption measured at 450 nm for each type of sample 1 on a Carry 5000 (Cary 5000). Calibrated baseline for blank glass slides.

CIE coordinates measured for each type of sample 1 using a CS-200 Chroma Meter. The sample was excited by a 450 nm LED and the camera collected off-axis color data.

(PL) quantum efficiency was measured using the method developed by Mello et al., Advanced Materials 9 (3): 230 (1997) (incorporated herein by reference). (One). The method used a collimated 450 nm LED source, integrating sphere and spectrometer. Three measurements were taken. First, the LED directly illuminates the integrating sphere, which is shown in FIG. 4 (graphically representing the emission intensity (a.u.) as the wavelength function (nm)) and gives the spectrum labeled L1, as an example described. Next, the PL sample was placed in the integrating sphere so that only the diffuse LED light illuminated the sample providing the (L2 + P2) spectrum shown as an example in Fig. Finally, the PL sample was placed in the integrating sphere to directly illuminate the sample (slightly deviating from normal incidence) providing the (L3 + P3) spectrum shown for Example 4 by the LED. After collecting the data, each spectral contribution (contribution of L and contribution of P) was calculated. L1, L2 and L3 correspond to the sum of the LED spectra for each measurement, and P2 and P3 are the sums associated with the PL spectrum for the second and third measurements. The following equation provides the external PL quantum efficiency:

Quantum confined semiconductor nanoparticles (including, for example, semiconductor nanocrystals) are nanometer-scale inorganic semiconductor nanoparticles. Semiconductor nanocrystals can be grown, for example, to a thickness of about 1 nm to about 1000 nm, preferably about 2 nm to about 50 nm, more preferably about 1 nm to about 20 nm (e.g., about 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19 or 20 nm).

The semiconductor nanocrystals included in the various aspects and embodiments of the present invention most preferably have an average nanocrystalline diameter of less than about 150 Angstroms (A). In certain embodiments, semiconductor nanocrystals having an average nanocrystalline diameter in the range of about 12 to about 150 Angstroms may be particularly preferred.

However, depending on the composition of the semiconductor nanocrystals and the desired emission wavelength, the average diameter may not be included in these various preferred size ranges.

The nanoparticles and the semiconductor forming the nanocrystals may be group IV elements, Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO, or a Group II-IV-VI compound or a Group II-IV-V compound such as CdS, CdO, , HgSe, HgTe, InAs, InP, InSb, InN, AlAs, AlP, AlSb, AlS, PbS, PbO, PbSe, Ge, Si, alloys thereof and / Alloy).

Examples of shapes of nanoparticles and nanocrystals include spheres, rods, disks, other shapes, or mixtures thereof.

In certain preferred aspects and embodiments of the present invention, the quantum confined semiconductor nanoparticles (including, for example, semiconductor nanocrystals) comprise a "core" of one or more first semiconductor materials Or "shell" of a second semiconductor material on at least a portion of the surface of the core. In certain embodiments, the shell surrounds the core. A core of quantum confined semiconductor nanoparticles (including, for example, semiconductor nanocrystals) comprising a shell on at least a portion of the surface of the core is also referred to as a "core / shell" semiconductor nanocrystal.

For example, the quantum confined semiconductor nanoparticles (including semiconductor nanocrystals) may comprise a Group IV element or a group of the formula MX wherein M is cadmium, zinc, magnesium, mercury, aluminum, gallium, indium, And mixtures thereof, wherein X is oxygen, sulfur, selenium, tellurium, nitrogen, phosphorus, arsenic, antimony or mixtures thereof. Examples of suitable materials for use as cores include CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO, HgSe, HgTe, InAs, InP, InSb, But are not limited to, InN, AlAs, AlP, AlSb, AlS, PbS, PbO, PbSe, Ge, Si, alloys thereof and / or mixtures thereof (including ternary and quaternary mixtures and / Do not. Examples of suitable materials for use as the shell include CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MgTe, GaAs, GaP, GaSb, GaN, HgS, HgO, HgSe, HgTe, InAs, InP, InSb, But are not limited to, InN, AlAs, AlP, AlSb, AlS, PbS, PbO, PbSe, Ge, Si, alloys thereof and / or mixtures thereof (including ternary and quaternary mixtures and / Do not.

In certain embodiments, the surrounding "shell" material may have a bandgap greater than the bandgap of the core material and may be selected to have an atomic spacing that is adjacent to that of the "core" substrate. In another embodiment, the peripheral shell material may have a bandgap that is smaller than the bandgap of the core material. In a further embodiment, the shell and the core material may have the same crystal structure. The shell material is discussed further below. For additional examples of core / shell semiconductor structures, see U.S. Application No. 10 / 638,546 entitled "Semiconductor Nanocrystal Heterostructures ", filed on August 12, 2003, which application is incorporated herein by reference in its entirety do.

The quantum confined semiconductor nanoparticles are preferably members of a population of semiconductor nanoparticles having a narrow size distribution. More preferably, the quantum confined semiconductor nanoparticles (including, for example, semiconductor nanocrystals) comprise a simple dispersion or substantially simple dispersion population of nanoparticles.

In certain embodiments, the% absorption of quantum confined semiconductor nanoparticles included in various aspects and embodiments of the invention is, for example, from about 0.1% to about 99%; , Preferably at least about 10% to about 99%. In one preferred example, the percent absorption is from about 10% to about 90% absorption. In another preferred embodiment, the percent absorption is from about 10% to about 50%; In another embodiment, the% absorption is from about 50% to about 90%.

Quantum confined semiconductor nanoparticles exhibit strong quantum confinement effects that can be used in the design of bottom-up chemical approaches to produce nanoparticle size and compositionally adjustable optical properties.

For example, the manufacture and handling of semiconductor nanocrystals is described in Murray et al. (J. Am. Chem. Soc., 115: 8706 (1993)); [In the thesis of Christopher Murray, "Synthesis and Characterization of II-VI Quantum Dots and Their Assembly into 3-D Quantum Dot Superlattices ", Massachusetts Institute of Technology, September, 1995]; And U.S. Patent Application No. 08 / 969,302, entitled "Highly Luminescent Color-Selective Materials ", which publications are incorporated herein by reference in their entirety. Other examples of the manufacture and handling of semiconductor nanocrystals are described in U.S. Patent Nos. 6,322,901 and 6,576,291 and U.S. Patent Application No. 60 / 550,314, each of which is incorporated herein by reference in its entirety.

One example of a method for producing semiconductor nanocrystals is a colloidal growth process. Colloidal growth occurs by injecting the M donor and X donor into the hot satellites solvent. One example of a preferred method of making simple dispersion semiconductor nanocrystals involves pyrolysis of organometallic reagents, such as dimethyl cadmium, implanted in a high temperature saturating solvent. This allows for separate nucleation, resulting in controlled growth of the macroscopic amount of semiconductor nanocrystals. Injection produces nuclei that can be grown in a controlled manner, forming semiconductor nanocrystals. The reaction mixture can be mildly heated to grow and anneal semiconductor nanocrystals. Both the average size and size distribution of semiconductor nanocrystals in the sample depend on the growth temperature. The growth temperature necessary to maintain normal growth increases with increasing average crystal size. Semiconductor nanocrystals are a member of a group of semiconductor nanocrystals. As a result of separate nucleation and controlled growth, the resulting population of semiconductor nanocrystals has a narrow simple distribution of the diameter. The simple dispersion distribution of the diameter can also be referred to as the size. Preferably, the simple dispersion population of particles comprises a population of particles in which at least 60% of the particles in the population are within a specified particle size range. The population of simple dispersed particles preferably has a diameter less than 15% rms (square root-mean-squared), more preferably less than 10% rms, most preferably less than 5%.

The narrow size distribution of semiconductor nanocrystals allows for the possibility of light emission in a narrow spectral width. Simple dispersion semiconductor nanocrystals are described in Murray et al. (J. Am. Chem. Soc., 115: 8706 (1993)); [In the thesis of Christopher Murray, "Synthesis and Characterization of II-VI Quantum Dots and Their Assembly into 3-D Quantum Dot Superlattices ", Massachusetts Institute of Technology, September, 1995]; And U.S. Patent Application No. 08 / 969,302, entitled "Highly Luminescent Color-Selective Materials ", which publications are incorporated herein by reference in their entirety.

Following nucleation, controlled growth and annealing of semiconductor nanocrystals in the satellites solvent can also result in uniform surface derivatization and ordered core structures. As the size distribution sharpens, the temperature can be raised to maintain normal growth. By further adding M donor or X donor, the growth period can be shortened. The M donor can be an inorganic compound, an organometallic compound or an elemental metal. M is cadmium, zinc, magnesium, mercury, aluminum, gallium, indium or thallium. The X donor is a compound capable of reacting with the M donor to form a substance having the formula MX. Typically, the X donor is a chalcogenide donor or a phonetic donor such as phosphine chalcogenide, bis (silyl) chalcogenide, diacid, ammonium salt or tris (silyl) phonide. Suitable X donors include diacids, bis (trimethylsilyl) selenide ((TMS) ₂ Se), trialkylphosphine selenides such as (tri-n-octylphosphine) selenide (TOPSe) Butylphosphine) selenide (TBPSe), trialkylphosphine telluride such as (tri-n-octylphosphine) telluride (TOPTe) or hexapropylinetriamidtelurilide (HPPTTe), bis silyl) Telluride ((TMS) ₂ Te), bis (trimethylsilyl) sulfide ((TMS) ₂ S), a trialkyl phosphine sulfide such as (tri -n- octyl phosphine) sulfide (TOPS) , Ammonium salts such as ammonium halide (e.g. NH ₄ Cl), tris (trimethylsilyl) phosphide ((TMS) ₃ P), tris (trimethylsilyl) arsenide ((TMS) ₃ As) (Trimethylsilyl) antimonide ((TMS) ₃ Sb). In certain embodiments, the M donor and the X donor can be residues in the same molecule.

Satellites can help control the growth of semiconductor nanocrystals. The satiety solvent is, for example, a compound having a donor isolate pair with a lone pair of electrons available for coordination to the surface of growing semiconductor nanocrystals. Solvent coordination can stabilize the growing semiconductor nanocrystals. Typical carrier solvents include alkylphosphines, alkylphosphine oxides, alkylphosphonic acids, or alkylphosphinic acids, although other carrier solvents such as pyridine, furan, and amines may also be suitable for semiconductor nanocrystal production. Examples of suitable bauxite solvents include pyridine, tri-n-octylphosphine (TOP), tri-n-octylphosphine oxide (TOPO) and trishydroxylpropylphosphine (tHPP). The technical grade TOPO may be used.

During the growth phase of the reaction the size distribution can be estimated by monitoring the particle absorption or emission linewidth. Deformation of the reaction temperature in response to changes in the absorption spectrum of the particles allows for the maintenance of a sharp particle size distribution during growth. The reactants can be added to the nucleation solution during crystal growth to grow larger crystals. For example, in the case of CdSe and CdTe, the emission spectrum of the semiconductor nanocrystals may be 300 nm to 5 탆, or 400 nm to 800 nm, by stopping the growth of the specific semiconductor nanocrystal average diameter and selecting the appropriate composition of the semiconductor material Lt; RTI ID = 0.0 &gt; of &lt; / RTI &gt;

As discussed above, preferably the quantum confined semiconductor nanoparticles (including semiconductor nanocrystals, for example) have a core / shell structure in which the core comprises an overcoat on the surface of the core. Overcoating (also referred to as shell) can be a semiconductor material having a composition that is the same as or different from the composition of the core. The overcoat of the semiconductor material on the surface of the core is selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III- ZnO, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgS, MgSe, GaAs, GaN, GaP, GaSe, GaSb, HgO, HgS, HgSe, HgTe, InAs, InN, InP, InSb, AlAs, AlN, AlP, AlSb, TlN, TlP, TlAs, TlSb, PbO, PbS, PbSe, PbTe, alloys thereof and / . For example, ZnS, ZnSe or CdS overcoats can be grown on CdSe or CdTe nanocrystals. An overcoating process is described, for example, in U.S. Patent No. 6,322,901. By adjusting the temperature of the reaction mixture during overcoating and monitoring the absorption spectrum of the core, an overcoated material having a high emission quantum efficiency and narrow size distribution can be obtained. The overcoat may comprise one or more layers. Overcoating comprises one or more semiconductor materials that are the same as or different from the composition of the core. In certain embodiments, the overcoat has a thickness of from about 1 to about 10 monolayers.

The particle size distribution of semiconductor nanocrystals can be further defined by size selective precipitation of semiconductor nanocrystals with poor solvents such as methanol / butanol as described in U.S. Patent No. 6,322,901. For example, semiconductor nanocrystals may be dispersed in a solution of 10% butanol in hexane. Methanol may be added dropwise to this stirring solution until the milky white persists. Separation of the supernatant and coagulate by centrifugation produces the largest microcrystalline-rich precipitate in the sample. This process can be repeated until further trituration of the optical absorption spectrum is noted. Size-selective precipitation can be performed in a variety of solvent / non-solvent pairs including pyridine / hexane and chloroform / methanol. The size-selective semiconductor nanocrystal population preferably has a deviation of less than 15% rms, more preferably less than 10% rms, and most preferably less than 5% rms, of the average diameter.

Additional examples of semiconductor nanocrystal fabrication methods are described in U.S. Patent Application No. 11/354185 to Bawendi et al., Entitled "Light Emitting Devices Including Semiconductor Nanocrystals" filed on February 15, 2006; U.S. Patent Application No. 11/253595 to Coe-Sullivan et al., Entitled "Light Emitting Devices Including Semiconductor Nanocrystals" filed October 21, 2005; U.S. Patent Application No. 10 / 638,546 to Kim et al., Entitled "Semiconductor Nanocrystal Heterostructures ", filed on August 12, 2003 (cited above); Murray, et al., J. Am. Chem. Soc., Vol. 115, 8706 (1993); [Kortan, et al., J. Am. Chem. Soc., Vol. 112,1327 (1990); Filed June 4, 2007, entitled " Synthesis and Characterization of II-VI Quantum Dots and Their Assembly into 3-D Quantum Dot Superlattices ", Massachusetts Institute of Technology, International Application No. PCT / US2007 / 13152 to Coe-Sullivan et al., Entitled "Functionalized Semiconductor Nanocrystals ", filed on September 12, 2007, entitled " Light-Emitting Devices and Displays With Improved Performance & US Patent Application No. 60 / 971,887 to Breen et al., Filed on November 21, 2006, entitled "Nanocrystals Including A Group IIIA Element And A Group VA Element, Method, Composition, Clive et al., 60 / 866,822, entitled " Semiconductor Nanocrystal Materials And Compositions And Devices Including Same " filed on November 21, 2006, U.S. Provisional Patent Application No. 60 / 866,828; U.S. Provisional Patent Application No. 60 / 866,832 to Craig Breen et al. Entitled "Semiconductor Nanocrystal Materials And Compositions And Devices Including Same" filed on November 21, 2006; U.S. Provisional Patent Application No. 60 / 866,833 to Dorai Ramprasad et al. Entitled "Semiconductor Nanocrystal And Compositions And Devices Including Same" filed on November 21, 2006; U.S. Provisional Patent Application No. 60 / 866,834 to Dorai Ramprasad et al. Entitled "Semiconductor Nanocrystal And Compositions And Devices Including Same" filed on November 21, 2006; U.S. Provisional Patent Application No. 60 / 866,839 to Dorai Ramprasad et al. Entitled "Semiconductor Nanocrystal And Compositions And Devices Including Same" filed on November 21, 2006; And U.S. Patent Application No. 60 / 866,843 to Dorai Ramprasad et al. Entitled "Semiconductor Nanocrystal And Compositions And Devices Including Same" filed November 21, 2006. Each of these documents is incorporated herein by reference in its entirety.

In various aspects and embodiments of the present invention contemplated by this disclosure, protonically constrained semiconductor nanoparticles (including but not limited to semiconductor nanocrystals) optionally have a ligand attached thereto.

In one embodiment, the ligand is derived from the spent satellites solvent used during the growth process. Surfaces can be deformed by repeated exposure to excessively competing deposition to form an overlay. For example, the dispersion of the capped semiconductor nanocrystals may be treated with a chelating organic compound, such as pyridine, to produce microcrystals that are readily dispersed in pyridine, methanol, and aromatics but are no longer dispersed in the aliphatic solvent. This surface exchange process may be performed by any compound capable of coordinating or bonding with the outer surface of the semiconductor nanocrystals (including, for example, phosphine, thiol, amine and phosphate). Semiconductor nanocrystals may be exposed to short-chain polymers that exhibit affinity for the surface and terminate in residues that have affinity for the suspension or dispersion medium. This affinity improves the stability of the suspension of semiconductor nanocrystals and makes condensation difficult. In another embodiment, the semiconductor nanocrystals may alternatively be prepared by the use of a non-satiety solvent (s).

For example, a satellites ligand may have the formula:

&Lt;

In this formula,

k is 2, 3 or 5 and n is 1, 2, 3, 4 or 5, where kn is 0 or more; X is O, S, S = O, SO ₂ , Se, Se = O, N, N = O, P, P = O, As or As = O; Y and L are each independently selected from aryl, heteroaryl, or one or more double bonds, at least one triple bond, or one or more double bonds and one straight chain containing one triple bond, optionally or branched C _{2 -12} hydrocarbon chain to be. The hydrocarbon chain is at least 1, optionally C _{1 -4} alkyl, C _{2 -4} alkenyl, C _{2 -4} alkynyl, C _{1 -4} alkoxy, hydroxyl, halo, amino, nitro, cyano, C _{3 -5} cycloalkyl alkyl, 3-5 membered heterocycloalkyl, aryl, heteroaryl, C _{1 -4} alkylcarbonyloxy, C _{1 -4} alkyloxycarbonyl, can be substituted by C _{1 -4-alkyl-carbonyl} or formyl. The hydrocarbon chain may also be optionally substituted with one or more substituents selected from the group consisting of -O-, -S-, -N (Ra) -, -N (Ra) -C (O) ) - C (O) -N (Rb) -, -OC (O) -O-, -P (Ra) - or -P (O) (Ra) -. Ra and Rb are each independently hydrogen, alkyl, alkenyl, alkynyl, alkoxy, hydroxylalkyl, hydroxyl or haloalkyl. The aryl group is a substituted or unsubstituted cyclic aromatic group. Examples include phenyl, benzyl, naphthyl, tolyl, anthracyl, nitrophenyl or halophenyl. Heteroaryl groups are aryl groups having one or more heteroatoms in the ring, such as furyl, pyridyl, pyrrolyl, phenanthryl.

Suitable viral satellite ligands are commercially available or can be prepared by conventional synthetic organic techniques (for example, described in J. March, Advanced Organic Chemistry), which is incorporated herein by reference in its entirety .

See also United States Patent Application Serial No. 10 / 641,292, filed on August 15, 2003, entitled "Stabilized Semiconductor Nanocrystals ", which is incorporated herein by reference in its entirety.

When electrons and holes are located on quantum confined semiconductor nanoparticles (including but not limited to semiconductor nanocrystals), emission can occur at the emission wavelength. The emission has a frequency corresponding to the bandgap of the quantum confined semiconductor material. The bandgap is the sum of the sizes of the nanoparticles. Quantum confined semiconductor nanoparticles with small diameters may have intermediate properties between the molecular and bulk forms of the material. For example, quantum confined semiconductor nanoparticles with small diameters can exhibit quantum confinement of both electrons and holes in all three dimensions, resulting in an increase in the effective bandgap of the material with a decrease in the size of the microcrystals do. As a result, for example, both the optical absorption and emission of semiconductor nanocrystals migrate to blue or higher energy as the size of the microcrystals decreases.

For an example of a blue light-emitting semiconductor nanocrystalline material, see U.S. Patent Application No. 11 / 071,244, filed March 4, 2005, the disclosure of which is incorporated herein by reference.

Release from quantum confined semiconductor nanoparticles can be controlled through the complete wavelength range of the ultraviolet, visible or infrared region of the spectrum by altering the size of the quantum confined semiconductor nanoparticles, the composition of the quantum confined semiconductor nanoparticles, or both May be a narrow Gaussian emission band. For example, CdSe can be adjusted in the visible light region, and InAs can be adjusted in the infrared region. The narrow size distribution of a population of quantum confined semiconductor nanoparticles can result in a narrow spectral range of light emission. The monodisperse population preferably has a diameter deviation of less than 15% rms (square root-mean-square), more preferably less than 10% rms, and most preferably less than 5% rms, of the quantum confined semiconductor nanoparticles . (Full width at half max, FWHM) for quantum confined semiconductor nanoparticles emitting at visible light of about 75 nm or less, preferably 60 nm or less, more preferably 40 nm or less, most preferably 30 nm or less ) Can be observed in a narrow range. The IR-emitting quantum confined semiconductor nanoparticles may have a FWHM of 150 nm or less or 100 nm or less. In terms of emission energy, the emission may have a FWHM of 0.05 eV or less or 0.03 eV or less. The width of the emission decreases as the dispersion of the quantum confined semiconductor nanoparticle diameter decreases.

The narrow FWHM of semiconductor nanocrystals can lead to saturated color emissions. A wide range of variable saturation color emissions over the entire visible spectrum of a single material system is not matched by any class of organic chromophores (see, for example, Dabbousi et al., J. Phys. Chem. 101, 9463 , Which is hereby incorporated by reference in its entirety). A simple dispersion group of semiconductor nanocrystals will emit light spanning a narrow range of wavelengths. A pattern comprising a size greater than one of the semiconductor nanocrystals may emit light in a narrow range of more than one wavelength. The color of the emitted light perceived by the viewer can be controlled by the choice of the appropriate combination of semiconductor nanocrystal size and material. Degradation of the band edge energy level of semiconductor nanocrystals facilitates capture and radiation recombination of all possible excitons.

Transmission electron microscopy (TEM) can provide information on the size, shape and distribution of semiconductor nanocrystal populations. The powder X-ray diffraction (XRD) pattern can provide the most complete information about the type and quality of the crystalline structure of semiconductor nanocrystals. The particle size can be estimated because the X-ray is inversely proportional to the peak width through the interference length. For example, the diameter of semiconductor nanocrystals can be measured directly by transmission electron microscopy or can be estimated from X-ray diffraction data using, for example, the Scherrer equation. It can also be estimated from the UV / Vis absorption spectrum.

The quantum confined semiconductor nanoparticles are preferably handled in a controlled (oxygen-free and moisture-free) environment to prevent quenching of the luminous efficiency during the fabrication process.

As used herein, "top", "bottom", "top" and "bottom" are relative position terms relative to a position from a reference point. More specifically, "top" means the position farthest from the reference point, while "bottom" means the position closest to the reference point. For example, where a layer is described as being "placed" or deposited on a component or substrate, the layer is disposed furthest away from the component or substrate. There may be other layers between the layer and the component or substrate. As used herein, "covering" is also a relative position term relative to a position from a reference point. For example, where a first material is described as covering a second material, the first material is disposed over the second material, but not necessarily with the second material.

As used herein, the singular forms "a," "an," and "the" include plural unless the context clearly dictates otherwise. Thus, for example, reference to an emissive material includes reference to one or more such materials.

Applicants specifically incorporate the full text of all references cited in this disclosure. It will also be understood that when an amount, concentration, or other value or parameter is provided as a list of ranges, preferred ranges, or higher preferred values and lower preferred values, it is understood that any range, Values and any range formed from any pair of any lower limit range or preferred value. Where a range of numerical values is recited herein, a range is intended to include all integers and fractions within its endpoints and ranges, unless otherwise stated. The scope of the invention is not intended to be limited to the specific values recited in defining the scope.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims and their equivalents.

Claims (104)

A waveguide comprising 0.001 to 15 weight percent of the quantum confined semiconductor nanoparticles based on the weight of the waveguide, and a non-luminescent scatterer in an amount in the range of 0.001 to 15 weight percent of the weight of the waveguide,
Wherein the scatterer increases the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles and assists in outcoupling the light converted down by the nanoparticles.
Optical components. delete The optical component of claim 1, further comprising a filter layer disposed over the surface of the waveguide. delete The optical component of claim 1, wherein the quantum confined semiconductor nanoparticles comprise a core / shell structure. delete The optical component of claim 1, wherein the quantum confined semiconductor nanoparticles are included in a layer disposed over a predetermined area of the waveguide surface. The optical component of claim 1, wherein the quantum confined semiconductor nanoparticles are included in a predetermined arrangement disposed over a predetermined area of the surface of the waveguide. delete delete delete 8. The optical component of claim 7, wherein the layer further comprises an imbedded material in which quantum confined semiconductor nanoparticles are distributed. delete A waveguide comprising a composition comprising quantum confined semiconductor nanoparticles, a non-luminescent scatterer, and an impurity material,
Wherein the composition comprises 0.001 to 15 weight percent of a quantum confined semiconductor nanoparticle based on the weight of the impurity and 0.001 to 15 weight percent of a scatterer based on the weight of the impurity material, Which increases the absorption path length of the excitation light used to excite confined semiconductor nanoparticles and helps outcoupling the light down-converted by the nanoparticles.
Optical components. delete delete 15. The optical component of claim 14, wherein the composition is disposed in a predetermined arrangement over a predetermined area of the waveguide surface. delete delete A waveguide component comprising a layer comprising a quantum confined semiconductor nanoparticle and an impurity material,
Wherein the layer comprises 0.001 to 15 wt% of the quantum confined semiconductor nanoparticles based on the weight of the impurity material, wherein the layer further comprises a non-emitting scatterer, wherein the scatterer is a quantum confined semiconductor To increase the length of the absorption path of the excitation light used to excite the nanoparticles and to assist in the outcoupling of the downconverted light by the nanoparticles, the scatterer being comprised in the layer in an amount of 0.001 to 15% by weight of the impurity material sign,
Optical components. delete delete delete A film comprising a carrier substrate comprising quantum confined semiconductor nanoparticles and a non-luminescent scatterer in a predetermined arrangement on a predetermined area of the surface,
The scatterer is intended to increase the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles in the predetermined arrangement and to assist outcoupling of the down-converted light by the nanoparticles, However,
Optical components. delete delete A film comprising a carrier substrate comprising a composition comprising a quantum confined semiconductor nanoparticle, a non-luminescent scatterer and an impurity material disposed in a predetermined arrangement on a predetermined area of a surface,
The scatterer is intended to increase the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles in the impurity material and to assist in the outcoupling of the downconverted light by the nanoparticles, And the composition comprises 0.001 to 15% by weight of the quantum confined semiconductor nanoparticles based on the weight of the impurity material, wherein the scatterer is contained in the composition in an amount ranging from 0.001 to 15% by weight of the impurity material sign,
Optical components. delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete An optical component including a waveguide including a layer on a surface, and a light source optically coupled to the waveguide,
Wherein the layer comprises a composition comprising a quantum constrained semiconductor nanoparticle, a non-luminescent scatterer and an impurity, wherein the layer comprises 0.001 to 15 wt% of the quantum constrained semiconductor nanoparticle and 0.001 To 15% by weight of a scatterer which increases the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles in the impurity material and helps to outcouple the light converted down by the nanoparticles In fact,
system. delete delete 45. The system of claim 44, further comprising at least two optical components, wherein the optical components are arranged so that the waveguides of each optical component are parallel to the waveguides of the other optical components, and wherein each optical component is coupled to a separate light source . 45. The system of claim 44 including two or more optical components separated from each other such that there is no optical communication between the optical components. delete 8. An element comprising an optical component according to any one of claims 1 to 7. delete 51. The device of claim 50, comprising a display or solid state lighting device. delete A solid imager, a non-luminescent scatterer, a viscosity modifier, and quantum confined semiconductor nanoparticles,
The nanoparticles are included in the composition in an amount ranging from 0.001 to 15 weight percent based on the weight of the impurity and the non-luminescent scatterer is included in the composition in an amount ranging from 0.001 to 15 weight percent based on the weight of the impurity Wherein the scatterer increases the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles in the impurity material and assists outcoupling of the downconverted light by the nanoparticles.
A composition useful for changing the wavelength of visible light or invisible light. delete delete A carrier substrate comprising a flexible component comprising a predetermined arrangement comprising a composition comprising quantum confined semiconductor nanoparticles and a non-luminescent scatterer over a predetermined portion of a surface,
The scatterer is intended to increase the absorption path length of the excitation light used to excite the quantum confined semiconductor nanoparticles in the film and to assist in outcoupling the light converted down by the nanoparticles, , The nanoparticles are included in the impurity material in an amount ranging from 0.001 to 15% by weight based on the weight of the impurity material, the scattering agent being present in an amount ranging from 0.001 to 15% by weight based on the weight of the impurity material, Included are:
film. 58. The film of claim 57, wherein the carrier substrate comprises a substantially optically transparent material. delete delete delete delete delete delete delete delete An optical component comprising a film according to claim 57 attached to a surface of a waveguide. A light source adapted to be optically coupled to the waveguide, and at least one film comprising at least one film according to claim 57. delete delete delete delete A method for optically exciting a quantum confined semiconductor nanoparticle comprising the steps of: applying a film according to claim 57 to a surface of a waveguide to optically excite the quantum confined semiconductor nanoparticles that are guided in the waveguide and directly or indirectly contained on the waveguide surface. &lt; / RTI &gt; 73. The method of claim 73, wherein the waveguide comprises a window made from a material having guiding capability. Emitting surface and a layer disposed over the light-emitting surface, wherein the layer comprises the composition according to claim 54. delete delete delete delete delete delete delete delete delete delete The thin film electroluminescent lamp of claim 75, wherein the weight ratio of the quantum confined semiconductor nanoparticles to the scattering body is from 1: 100 to 100: 1. delete delete 77. The thin film electroluminescent lamp of claim 75 further comprising an outcoupling feature on the surface of the lamp disposed with the layer comprising the composition. 78. The thin film electroluminescent lamp of claim 75, further comprising an outcoupling feature over the layer comprising the composition. delete delete delete delete delete delete delete delete delete delete delete delete delete delete

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