KR101538874B1 - Extended reactor assembly with multiple sections for performing atomic layer deposition on large substrate - Google Patents

Abstract

Embodiments relate to elongated reactor assemblies in a deposition apparatus for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors or radical reactors. As part of the ALD process, as the substrate passes through the injector or radical reactor, each injector or radical reactor injects gases or radicals onto the substrate. Each injector or radical reactor comprises a plurality of sections in which at least two sections have different cross-sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor can inject gases and radicals more evenly throughout the substrate. Each injector or radical reactor may include one or more outlets for discharging excess gasses or radicals to the outside of the deposition apparatus.

Description

TECHNICAL FIELD [0001] The present invention relates to an extended reactor assembly having multiple sections for performing atomic layer deposition on a large substrate. [0002]

The present invention relates to a deposition apparatus for depositing one or more material layers on a substrate using atomic layer deposition (ALD).

Atomic layer deposition (ALD) is a thin film deposition technique for depositing one or more layers of material on a substrate. ALD uses two types of chemicals: one is the source precursor and the other is the reactant precursor. Generally, ALD includes the following four steps. (i) injection of a precursor of a raw material, (ii) removal of a physical adsorption layer of a raw material precursor, (iii) injection of a precursor, and (iv) removal of a physical adsorption layer of the reaction precursor. ALD may be a slow process that requires a long time or many iterations before a layer of desired thickness is obtained. Therefore, in order to expedite the process, a vapor deposition reactor or other similar device with a unit module (so-called linear injector) described in U.S. Patent Publication No. 2009/0165715 is used to expedite the ALD process. The unit module includes an injection part and a discharge part (raw material module) for the raw material, and an injection part and an exhaust part (reaction module) for the reaction material.

Conventional ALD vapor deposition chambers have one or more reactor sets for depositing ALD layers on substrates. As the substrate passes under the reactors, the substrate is exposed to the raw precursor, purge gas, and reaction precursor. The source precursor molecules deposited on the substrate react with the reaction precursor molecules or the source precursor molecules are displaced by the reaction precursor molecules to deposit a layer of material on the substrate. After exposing the substrate to the raw precursor or reaction precursor, the substrate may be exposed to the purge gas to remove the excess precursor molecules or reaction precursor molecules from the substrate.

It is an object of the present invention to provide a reactor assembly and a deposition apparatus which, in an atomic layer deposition process, use a plurality of sections having different cross-sectional configurations to inject gas and radicals more uniformly throughout the substrate.

Embodiments relate to a radical reactor of a reactor assembly comprising a body disposed adjacent a susceptor on which a substrate is mounted. The body is provided with a first plasma chamber in a first reactor section extending by a first distance along the length of the radical reactor and a second plasma chamber in a second reactor section extending by a second distance along the length of the radical reactor do. The first internal electrode extends in the first plasma chamber. By applying a voltage difference across the first internal electrode and the first external electrode, the first internal electrode produces a radical of the first gas within the first plasma chamber. The second internal electrode extends in the second plasma chamber. By applying a voltage difference across the second internal electrode and the second external electrode, the second internal electrode produces the radical of the first gas within the second plasma chamber.

In one embodiment, the body is further formed with an injection chamber, a stenotic zone, and at least one outlet. The injection chamber is connected to the first plasma chamber and the second plasma chamber to receive the radicals. The radicals are injected from the implantation chamber onto the substrate. The stenotic region has a height that is less than the height of the injection chamber. At least one outlet is connected to the stenotic zone. At least one outlet discharges radicals from the reactor assembly.

In one embodiment, a first plasma chamber is formed on one side of the injection chamber, and a second plasma chamber is formed on the other side of the injection chamber.

In one embodiment, the body is further formed with a first reactor channel in the first reactor section and a second reactor channel in the second reactor section. The first reactor channel is connected to the gas source through a first conduit and the second reactor channel is connected to the gas source through a second conduit which is separate from the first conduit.

In one embodiment, the body is further formed with at least two outlets for discharging radicals from the reactor assembly. The inner surfaces of the at least two outlets extend between the outlets.

In one embodiment, the reactor assembly further comprises an injector having a first injector channel, a second injector channel, a chamber, and a stenotic zone. The first injector channel is disposed in the first injector section of the injector for receiving the second gas through the first conduit. The second injector channel is disposed in the second injector section of the injector that receives the second gas through the second conduit. The chamber includes a first injector channel and a second injector channel for receiving gas and injecting gas onto the substrate, at least one outlet for discharging gas from the reactor assembly, and a stenotic zone connecting the chamber to at least one outlet do. The stenotic zone has a height that is less than the height of the injector chamber.

In one embodiment, a first injector channel is formed on one side of the injector chamber and a second injector channel is formed on the opposite side of the chamber.

In one embodiment, the effective length of the reactor assembly is greater than the width of the substrate.

In one embodiment, the first internal electrode comprises a core and an outer layer. The core is made of a first material having a higher conductivity compared to the second material of the outer layer.

In one embodiment, the first material comprises copper, silver or an alloy thereof and the second material comprises stainless steel, austenitic nickel-chromium based superalloy or nickel steel alloy.

Embodiments also relate to a deposition apparatus for depositing one or more layers of material on a substrate using atomic layer deposition (ALD). The deposition apparatus includes a susceptor, a radical reactor, and an actuator. The substrate is placed on the susceptor. The radical reactor comprises a body disposed adjacent to the susceptor. A body is formed with a first plasma chamber in a first reactor section of a radical reactor having a length extending by a first distance and a second plasma chamber in a second reactor section extending a second distance by a distance. The first internal electrode extends in the first plasma chamber. The first internal electrode generates a radical of the first gas in the first plasma chamber by applying a voltage difference across the first internal electrode and the first external electrode. The second internal electrode extends in the second plasma chamber. The second internal electrode generates a radical of the first gas in the second plasma chamber by applying a voltage difference across the second internal electrode and the second external electrode. The actuator causes relative movement between the susceptor and the radical reactor.

According to the present invention, during atomic layer deposition, a plurality of sections having different cross-sectional configurations can be used to inject gases and radicals more uniformly throughout the substrate.

1 is a cross-sectional view of a linear deposition apparatus according to one embodiment.
2 is a perspective view of a linear deposition apparatus according to one embodiment.
3 is a perspective view of a rotary evaporator according to one embodiment.
4 is a perspective view of a reactor assembly, according to one embodiment.
Figure 5 is a top plan view of a reactor assembly, in accordance with one embodiment.
6 is a cross-sectional view of the reactor assembly taken along line AA 'or line BB' of FIG. 4, according to one embodiment.
FIG. 7 is a cross-sectional view of the reactor assembly taken along line CC 'of FIG. 5, according to one embodiment.
FIG. 8 is a cross-sectional view of a reactor assembly taken along line DD 'of FIG. 5, according to one embodiment.
9 is a cross-sectional view of the reactor assembly taken along line EE 'of FIG. 5, according to one embodiment.
Figure 10 is a top plan view of a reactor assembly, according to another embodiment.
11 is a view for explaining an internal electrode according to an embodiment.

Embodiments of the present invention will now be described with reference to the accompanying drawings. However, the principles disclosed herein may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the present specification, detailed description of well-known features and techniques may be omitted so as to avoid unnecessarily obscuring the features of the embodiments.

In the drawings, like reference numerals in the drawings represent like elements. The shape, size and area of the drawings, and the like, may be exaggerated for clarity.

Embodiments relate to elongated reactor assemblies in deposition equipment for performing atomic layer deposition (ALD) on a wide substrate. The elongated reactor assembly includes one or more injectors or radical reactors. As part of the ALD process, each injector or radical reactor injects a gas or radical onto a substrate as it passes through an injector or a radical reactor. Each injector or radical reactor comprises a plurality of sections with at least two sections having different cross-sectional configurations. The different sections receive gas through different conduits (e.g., pipes). By providing different sections in the injector or radical reactor, the injector or radical reactor injects gases or radicals more evenly throughout the substrate. Each injector or radical reactor may include one or more outlets for discharging excess gases or radicals to the outside of the deposition apparatus.

1 is a cross-sectional view of a linear deposition apparatus 100 according to an embodiment. FIG. 2 is a perspective view of the linear positioning device 100 of FIG. 1 according to one embodiment (with the chamber walls 100 removed for ease of illustration). Linear deposition apparatus 100 may include support pillars 111, process chamber 110, and reactor assembly 136 among other components. Reactor assembly 136 may include one or more injectors and radical reactors. Each of the injector modules injects a source precursor, a reactant precursor, a purge gas, or a combination of these materials into the substrate 120. The radical reactors inject radicals of one or more gases onto the substrate 120. The radical may function as a material precursor, a reaction precursor, or a material that processes the surface of the substrate 120.

The process chamber surrounded by the walls 110 may be kept in a vacuum to prevent contaminants from affecting the deposition process. The process chamber includes a susceptor 128 that receives the substrate 120. The susceptor 128 may be located above the support plate 124 for slidable motion. The support plate 124 may include a temperature controller (e.g., a heater or a cooler) for controlling the temperature of the substrate 120. The linear deposition apparatus 100 also includes lift pins (not shown) that facilitate loading the substrate 120 onto the susceptor 128 or lowering the substrate 120 from the susceptor 128 can do.

In one embodiment, the susceptor 128 is secured to a bracket 210 that moves across an extension bar 138 formed with a screw. The pedestal 210 has corresponding screws formed in perforations that accommodate the extension bar 138. The extension bar 138 is fixed to the spindle of the motor 114, so that the extension bar 138 rotates as the shaft of the motor 114 rotates. The rotation of the extension bar 138 causes the pedestal 210 (and hence the susceptor 128) to move linearly above the support plate 124. By controlling the speed and direction of rotation of the electric motor 114, the speed and direction of the linear motion of the susceptor 128 can be controlled. The use of the electric motor 114 and the extension bar 138 is merely an example of how the susceptor 128 is moved. Various other methods of moving the susceptor 128 (e.g., using gears and pinions at the bottom, top, or side of the susceptor 128) may be used. Moreover, instead of moving the susceptor 128, the susceptor 128 can remain stationary and the reactor assembly 136 can move.

3 is a perspective view of a rotary evaporator 300 according to an embodiment. Instead of using the linear deposition apparatus 100 of FIG. 1, the rotary deposition apparatus 300 may be used to perform the deposition process according to another embodiment. Rotary evaporator 300 includes reactors 320, 334, 364 and 368 (collectively referred to herein as a "reactor assembly"), a susceptor 318 and a container 324 surrounding these elements . The susceptor 318 holds the substrate 314 in place. The reactor assembly is located above the substrate 314 and the susceptor 318. The susceptor 318 or reactor assembly rotates so that the substrate undergoes other processes.

One or more of the reactors 320, 334, 364, 368 are connected to the gas pipe through the inlet 330 to receive the raw precursor, reaction precursor, purge gas, or other materials. The materials supplied by the gas pipe can be injected directly into the substrate 314 by (i) reactors 320, 334, 364 and 368, which (ii) reactors 320, 334, 364, 368 (Iii) after being converted into radicals by the plasma generated inside the reactors 320, 334, 364, After the materials are injected into the substrate 314, the excess material may be exhausted through the outlet 330. [

Embodiments of the reactor assemblies described herein are used in deposition apparatuses such as linear deposition apparatus 100, rotary deposition apparatus 300, or other types of deposition apparatuses. Figure 4 is an example of a reactor assembly 136 that includes a side-by-side injector 402 and a radical reactor 404. Both the injector 402 and the radical reactor 404 are elongated to cover the width of the substrate 120. The susceptor 128 on which the substrate 120 is mounted is reciprocated in two directions (e.g., right and left directions in FIG. 4) to inject gas or radicals injected by the injector 402 and the radical reactor 404 The substrate 120 is exposed. Although only one injector 402 and one radical reactor 404 are illustrated in FIG. 4, more injectors or radical reactors may be provided in the linear deposition apparatus 100. It is also possible to provide only the radical reactor 402 or the injector 404 to the linear deposition apparatus 100 only.

The injector 402 receives gas through a pipe (e.g., pipe 424 and pipe 512 as described in Figure 5) and moves the substrate 120 as the susceptor 128 moves below the injector 424, Gas is injected into the gas. The injected gas may be a source gas, a reactive gas, a purge gas, or a combination thereof. After being injected onto the substrate 120, the excess gas in the injector 402 is discharged through the outlets 410, 412. The outlets 410 and 412 are connected to a pipe (not shown) to discharge the excess gas to the outside of the linear deposition apparatus 100. As described in detail below with reference to Fig. 5, the injector 402 includes two sections having different cross-sectional configurations and connected to different injection pipes. By providing two outlets 410 and 412, the excess gas in the injector 402 can be effectively removed.

The radical reactor 404 receives gases through a pipe (not shown) and has two sections with different cross-sectional configurations and separate internal electrodes.

The channels are formed in the body of the radical reactor 404 and carry the gases received to the plasma chamber. The two inner electrodes extend approximately half way across the radical reactor 404 and are connected to a voltage source (not shown) or ground (not shown) via wire 432. Internal electrodes are disposed in the plasma chambers, as will be described in detail below with reference to Figures 8 and 9. In the radical reactor 404, the external electrodes are connected to ground or a voltage source. In one embodiment, the radical reactor 404 may function as a conductive body with external electrodes. The outlets 416 and 420 are formed in the body of the radical reactor 404 to form excess radicals or gases that are returned from the radicals to the inactive state during or after implantation onto the substrate 120 out of the deposition apparatus 100 Release. The outlets 416 and 420 are connected to the pipes (not shown) to provide the two outlets 416 and 420 that discharge excess radicals or gases out of the linear deposition apparatus 100, The excess gas can be removed more effectively despite the long length of the radical reactor 404.

4, the effective length L2 of the reactor assembly is longer than the width of the substrate 120 by W ₁ + W ₂ . The effective length L2 is related to the length across the reactor assembly where the ALD process is performed on the substrate 120 at a predefined level of quality. The predetermined level of quality can be expressed as a property or property of the layer deposited on the substrate. Since the deposition is not performed in a uniform and coherent manner at the lateral edges of the reactor assembly, the effective length tends to be shorter than the actual length L1 of the reactor assembly. In one embodiment, the substrate may have a width of 500 millimeters (mm) or greater.

5 is a top plan view of a reactor assembly (e.g., injector 402 and radical reactor 404), according to one embodiment. The injector 402 has two injector sections 501, 503 with different cross-sectional configurations. The body 602 (see FIG. 6) of the injector 402 in the injector section 501 is formed with a channel 516 which is connected to a pipe 512 for receiving gas from the gas source. The channel 516 is connected to the injector chamber 513 through a hole 532 for receiving gas. Similarly, a section 503 of the injector 402 is formed with a channel 522 connected to a pipe 424 for receiving a gas (the same gas provided through the pipe 512) from the gas source. The channel 522 is connected to the injector chamber 513 through the hole 33%. The connection of the channels 516 and 522, the holes 532 and 533 and the injector chamber 513 will be described in detail below with reference to Figs. 8 and 9. By providing gas into the injector chamber 513 through multiple pipes and channels, the gas can be evenly distributed in the injector chamber 513 throughout the injector chamber 513.

Similarly, the radical reactor 404 has two reactor sections 505, 507 with different cross-sectional configurations. The body 606 (see FIG. 6) of the radical reactor 404 is formed with channels 510, 518 connected to pipes 714a, 714b (see FIG. 7) for receiving gas from a gas source. The channel 510 is connected to a plasma chamber (indicated by reference numeral 718 in FIGS. 7 and 8) which is also formed in the reactor section 505 of the body 606. The inner electrode 604 extends in the plasma chamber 718 approximately half way across the length of the radical reactor 404 so that when the voltage difference is applied across the electrodes 504 and 820, (Indicated by reference numeral 820 in FIG. 7A) in the plasma chamber 718. The channel 518 is connected to a plasma channel (indicated by reference numeral 720 in FIGS. 7 and 9) formed in the section 507 of the body 606. The inner electrode 432 extends in the plasma chamber 720 approximately half way across the length of the radical reactor 404 so that when the voltage difference across the electrodes 432 and 904 is applied, (Indicated by reference numeral 904 in FIG. 1). By providing two separate plasma chambers 828 and 720 in the body 606 of the radical reactor 404, the radicals of the gas can be uniformly generated across the length of the radical reactor 404.

FIG. 6 is a cross-sectional view of an injector 402 or radical reactor 404 taken along line A-A 'or B-B' in FIG. 4, according to one embodiment. The injector 402 has a body 602 in which the outlets 410 and 412 are formed. The outlets 410 and 412 are cavities adjacent the low center section of the body 602. The lower portions 618 of the outlets 410 and 412 extend generally along the length of the injector 402 while the upper portions 612 and 614 of the outlets 410 and 412 are smaller for connection to the discharge pipe. The outlets 410 and 412 have contoured inner surfaces 640 and 644 which smoothly form a curve in the low center portion of the reactor 404.

In the case of a radical reactor 404, the radical reactor 404 has a body 606 with outlets 416 and 420 formed therein. The outlets 416 and 420 are cavities adjacent the central section of the body 606. The lower portions 618 of the outlets 416 and 420 extend generally across the length of the radical reactor 404 while the upper portions 612 and 614 of the outlets 416 and 420 extend the length It is smaller for. The outlets 416 and 420 have curved inner surfaces 640 and 644 that smoothly extend around the center of the radical reactor 404.

As the length of the injector 420 or the radical reactor 404 increases, the vacuum conductivity within the injector 402 or the radical reactor 404 can be reduced. The reduction in vacuum conductivity reduces the efficiency of releasing gases or radicals remaining in the injector 402 or the radical reactor 404. By providing multiple outlets, the vacuum conductivity can be enhanced. Which contributes to more efficient release of gases or radicals from the injector 402 or the radical reactor 404.

Although only two outlets are formed in the injector 402 and the radical reactor 404, two or more outlets may be provided in the injector 402 and the radical reactor 404, depending on the length of the injector 402 or the radical reactor 404 .

FIG. 7 is a cross-sectional view of a radical reactor 404 in a reactor assembly taken along line C-C 'of FIG. 5, according to one embodiment. The radical reactor 404 has two internal electrodes 428 and 504 each extending halfway across the radical reactor 404. The internal electrode 428 is disposed in the plasma chamber 720 and is fixed by an end cap 702 and a holder (not shown). Similarly, internal electrode 504 is disposed within plasma chamber 718 and is also secured to end cap 722 and holder 710. The end caps 702 and 722 and the holders 710 may be made of an insulating material such as a ceramic to provide a short circuit between the internal electrodes 428 and 504 of the radical reactor 404 and the body 606, (shorting). Holders (e.g., holder 710) are structured to hold internal electrodes 428 and 504 while allowing thermal expansion of internal electrodes 429 and 504. The end caps 702 and 722 are secured to the body 606 of the radical reactor 404 by a screw. The wires 432 and 730 connect the ends 706 and 726 of the internal electrodes 432 and 504 to the voltage source.

During operation of the radical reactor 404, gas is injected into the channels 510, 518 through the pipes 714a, 714b. The gas flows through the holes 540 and 544 into the plasma chambers 718 and 720. Plasma is generated in the plasma chambers 718 and 720 to result in radicals of the gas. The radicals are then injected through the slits 734 and 738 into the injection chamber 560 formed on the bottom of the radical reactor 404.

Figure 8 is a cross-sectional view of the reactor assembly taken along line D-D 'in Figure 5 at the injector sections 501, 505, according to one embodiment. In the embodiment of FIG. 8, channel 514 and hole 532 are aligned along plane F-F '. Plane F-F " is tilted to the right side at an angle to the vertical plane F-F '. After the gas is injected into the injection chamber 513 through the channel 514 and the hole 532, the gas moves down toward the substrate 120 and contacts the substrate 120. The gas then flows through a constriction zone 840 while excess materials (e.g., physically adsorbed raw materials or reaction precursors) are removed from the substrate 120. The excess gas is discharged through the outlet 412 to the outside of the radical reactor.

Similarly, channel 510, hole 540, plasma chamber 718 and internal electrode 504 are aligned along plane G-G ". The plane G-G " is inclined at an angle &thetas; for the vertical plane G-G '. The angles? And? May have the same or different sizes.

The gas injected into the plasma chamber 718 through the channel 510 and the hole 540 is converted to radicals by applying a voltage difference across the internal electrode 504 and the external electrode 820. The generated radicals move through the slit 734 into the injection chamber 560. In the implantation chamber 560, the radicals move toward the substrate 120 and contact the substrate 120. The radical may function as a raw precursor, as a reaction precursor, or as a surface treatment material on the substrate 120. The remaining radicals (or gases returning to the inactive state) pass through the stenotic zone 844 and exit through the outlet 420.

9 is a cross-sectional view of the reactor assembly taken along line E-E 'in FIG. 5 at sections 503 and 507, according to one embodiment. In the embodiment of Fig. 9, channel 515 and hole 533 are aligned along plane H-H ". The plane H-H " is tilted to the left side at an angle? 'To the vertical plane H-H'. After the gas is injected into the injection chamber 514 through the channel 515 and the hole 533, the gas moves down toward the substrate 120 and contacts the substrate 120. The gas then flows through the stenotic zone 840 and is removed from the reactor assembly through outlet 410.

The channel 518, the hole 544, the plasma chamber 720 and the internal electrode 432 are aligned along the plane I-I '. The plane I-I 'is inclined at an angle β' relative to the vertical plane I-I '. In the implantation chamber 560, the radicals move toward the substrate 120 and contact the substrate 120. The radicals function as raw precursors, reaction precursors, or as surface treatment materials on the substrate 120. The remaining radicals (or gases returning to the inactive state) pass through the stenotic zone 844 and exit through the outlet 420. The angle? 'And the angle?' May be the same or different sizes.

The embodiments described above with reference to Figs. 4-9 are merely illustrative. Various changes or alternatives may be made to the embodiments. For example, the holes 540, 544, 836, and 908 need not be aligned in the same plane as the channels 510, 518, 514, and 515. Also, perforations may be used to carry gasses or radicals to the substrate 120 than holes or slits. The injection chambers 514 and 560 may have various other shapes than those illustrated in Figures 8 and 9. Furthermore, the outlets may be formed on both sides of the injector or radical reactor instead of being provided on only one side (e.g., the right side as described in Figures 8 and 9).

In one embodiment, the reactor assembly comprises an injector 402 for injecting Trimethylaluminum (TMA) as a precursor material on a substrate 120 and a radical reactor (not shown) for injecting N ₂ O or O ₂ radicals as a precursor (404) to deposit an Al ₂ O ₃ layer on the substrate (120). A variety of different materials can be used as the source precursor and reaction precursor to deposit other materials on the substrate.

10 is a top plan view of a reactor assembly 1000, according to another embodiment. The reactor assembly 1000 is similar to the reactor assembly described above with reference to Figures 4-9, except that the injector and the radical assembly are divided into three separate sections. 10 includes injector sections 1010, 1014, 1018 of approximately the same length, and the radical reactor includes reactor sections 1022, 1026, 1028 of approximately the same length. In this embodiment, the pipes 1032a and 1040a are connected to the channel in the section 1014 of the injector. Pipe 1032b is connected to the channel in section 1010 and pipe 1040b is connected to the channel in section 1018 of the injector.

The radical reactor of FIG. 10 is also similar to the radical reactor of FIGS. 4-9, but has three internal electrodes 1072, 1074, 1076, respectively, provided in one of the sections 1022, 1026, 1028. The three inner electrodes 1072, 1074 and 1076 are fixed by the holders 1032, 1036, 1040 and 1044 to insulate the inner electrodes 1072, 1074 and 1076 from the body of the radical reactor. Internal electrode 704 is connected to terminals 1052 and 1056 through wires or other conductive materials.

Depending on the size and use of the reactor assembly, its injectors or radical reactors can be divided into three or more sections. The sections need not be the same length, and the injectors and sections of the radical reactors may have different lengths. In one embodiment, the total length of the injectors and radical reactors may be different. Further, the injectors and the radical reactors do not need to be arranged side by side and can be arranged far from one another.

11 is a view for explaining the internal electrode 1110 according to one embodiment. As the length of the electrode 1110 increases, the resistance of the electrode 1110 may also increase. The electrode 1110 may have an outer layer 1114 and a core 1118. In one embodiment, the outer layer 1114 may be made of stainless steel, austenitic nickel-chromium based superalloy (e.g., INCONEL) or nickel steel alloy, and core 1118 may be made of copper, . ≪ / RTI > For example, copper or silver may be injected into a pipe made of stainless steel or an alloy to form core 1118. Alternatively, rods made of copper, silver, or alloys thereof may be used for the core 1118, which may be plated with materials such as nickel to form the outer layer 114. By providing a core with higher conductivity, the overall conductivity of electrode 1110 can be increased, contributing to more uniform and consistent generation of radicals along the length of electrode 1110 within the plasma channel. In one embodiment, the internal electrode 1110 may have a diameter of 3 to 10 millimeters (mm).

Although the present invention has been described above in terms of several embodiments, various modifications may be made within the scope of the present invention. Accordingly, the disclosure of the present invention is intended to be illustrative, and not to limit the scope of the invention, the scope of which is set forth in the following claims.

Claims (20)

A radical reactor,
Wherein the radical reactor comprises:
A body disposed adjacent to the susceptor on which the substrate is mounted, the body having a first plasma chamber in a first reactor section of the radical reactor extending a first distance and a second reactor extending in length by a second distance, Wherein the first plasma chamber and the second plasma chamber are the same in length and are shifted in a plane perpendicular to the longitudinal direction;
A first internal electrode extending in the first plasma chamber, the first internal electrode applying a voltage difference across the first internal electrode and the first external electrode to form a first plasma in the first plasma chamber; The first internal electrode configured to generate radicals; And
And a second internal electrode extending in the second plasma chamber, the second internal electrode applying the voltage difference across the second internal electrode and the second external electrode to form the first plasma chamber in the first plasma chamber, Wherein the second internal electrode is configured to generate the radicals of the gas. ≪ Desc / Clms Page number 19 > 20. A reactor assembly in a deposition apparatus for performing atomic layer deposition (ALD).
The method according to claim 1,
In the body,
An injection chamber connected to the first plasma chamber and the second plasma chamber to receive the radicals, the radicals being injected from the injection chamber onto the substrate;
A stenotic zone having a height less than a height of the injection chamber; And
Wherein the at least one outlet is further configured to discharge the radicals from the reactor assembly, wherein the at least one outlet is connected to the narrowed region, and wherein the at least one outlet is further configured to discharge the radicals from the reactor assembly. The reactor assembly comprising:
The method according to claim 1,
Wherein the first plasma chamber in the first reactor section of the radical reactor is formed on one side of the injection chamber in which the second plasma chamber is absent and in the second reactor section of the radical reactor the second plasma chamber is in the second reactor section of the radical reactor, Lt; RTI ID = 0.0 > (ALD) < / RTI > plasma chamber.
The method according to claim 1,
Wherein the body further comprises a first reactor channel in the first reactor section and a second reactor channel in the second reactor section,
The first reactor channel is connected to the gas source through a first conduit,
Wherein the second reactor channel is connected to the gas source through a second conduit that is separate from the first conduit. ≪ Desc / Clms Page number 15 >
The method according to claim 1,
Characterized in that the body is further provided with at least two outlets for discharging the radicals from the reactor assembly and two outlets of the at least two outlets having inner surfaces leading in position between the two outlets. A reactor assembly in a deposition apparatus for performing atomic layer deposition (ALD).
The method according to claim 1,
Further comprising an injector,
In the injector,
A first injector channel in a first injector section of the injector for receiving a second gas through a first conduit;
A second injector channel in a second injector section of the injector for receiving the second gas through a second conduit;
A chamber connected to the first injector channel for injecting the gas onto the substrate and to the second injector channel for receiving the gas and connected to at least one outlet for discharging the gas from the reactor assembly; And
Characterized in that the stenotic region is formed with a stenosis region connecting the chamber to the at least one vent, the stenotic region having a height lower than the height of the injection chamber. A reactor assembly in a deposition apparatus.
The method according to claim 6,
Characterized in that the first injector channel is formed on one side of the chamber and the second injector channel is formed on the other side of the chamber.
The method according to claim 1,
Wherein the effective length of the reactor assembly is greater than the width of the substrate. ≪ Desc / Clms Page number 19 >
The method according to claim 1,
Characterized in that the inner electrode comprises a core and an outer layer, wherein the core is made of a first material having a higher conductivity compared to the second material of the outer layer. ≪ / RTI >
10. The method of claim 9,
Characterized in that the first material comprises copper, silver or an alloy thereof and the second material comprises stainless steel, austenitic nickel-chromium based superalloy or nickel steel alloy, wherein the atomic layer deposition (ALD) Lt; RTI ID = 0.0 > 1, < / RTI >
A susceptor configured to raise a substrate;
A body disposed adjacent to the susceptor, wherein the body is provided with a first plasma chamber in a first reactor section of a radical reactor extending in length by a first length and a second plasma chamber in a second reactor section in a second reactor section, Wherein a plasma chamber is formed, the first plasma chamber and the second plasma chamber being the same in length and shifted in a plane perpendicular to the longitudinal direction;
A first internal electrode extending in the first plasma chamber, the first internal electrode applying a voltage difference across the first internal electrode and the first external electrode to form a first plasma in the first plasma chamber, The first internal electrode configured to generate radicals; And
And a second internal electrode extending in the second plasma chamber, wherein the second internal electrode applies a voltage difference across the second internal electrode and the second external electrode to form a second plasma within the second plasma chamber, Said radical reactor being configured to generate said radicals of said second internal electrode; And
And an actuator configured to cause relative movement between the susceptor and the radical reactor. ≪ RTI ID = 0.0 > A < / RTI > apparatus for depositing one or more layers of material on a substrate using atomic layer deposition (ALD).
12. The method of claim 11,
In the body,
An injection chamber connected to the first plasma chamber and the second plasma chamber to receive the radicals, the radicals being injected from the injection chamber onto the substrate;
A stenotic zone having a height lower than the injection chamber; And
Wherein at least one outlet is connected to the stenotic zone, the at least one outlet being configured to discharge the radicals from the radical reactor. ≪ RTI ID = 0.0 > To deposit one or more layers of material on a substrate.
12. The method of claim 11,
Wherein the first plasma chamber in the first reactor section of the radical reactor is formed on one side of the injection chamber in which the second plasma chamber is absent and in the second reactor section of the radical reactor the second plasma chamber is in the second reactor section of the radical reactor, 1 atomic layer deposition (ALD) is formed on the other side of the implant chamber without a plasma chamber.
12. The method of claim 11,
Wherein the body further comprises a first reactor channel in the first reactor section and a second reactor channel in the second reactor section,
The first reactor channel is connected to the gas source through a first conduit,
Characterized in that said second reactor channel is connected to said source of gas through a second conduit which is distinct from said first conduit, characterized in that the deposition is for deposition of one or more layers of material on the substrate using atomic layer deposition (ALD) Device.
12. The method of claim 11,
Characterized in that the body is further provided with at least two outlets for discharging the radicals from the radical reactor, at least between the outlets, the inner surface of the at least two outlets being followed by atomic layer deposition (ALD) Thereby depositing a layer of one or more materials on the substrate.
12. The method of claim 11,
Further comprising an injector,
In the injector,
A first injection channel in a first injector section of the injector for receiving a second gas through a first conduit;
A second injection channel in a second injector section of the injector for receiving the second gas through a second conduit;
A chamber connected to said first injection channel and said second injection channel for receiving said gas and for injecting said gas onto said substrate and with at least one outlet for discharging said gas from said radical reactor; And
Characterized in that said confinement region is formed in the at least one vent, said confinement region connecting said chamber to said at least one vent, said confinement region having a height lower than the height of the injection channel. Wherein the at least one layer of material is deposited on the substrate.
17. The method of claim 16,
Characterized in that the first implantation channel is formed on one side of the chamber and the second implantation channel is formed on the opposite side of the chamber. Is deposited.
12. The method of claim 11,
Wherein the effective length of the radical reactor is greater than the width of the substrate. ≪ Desc / Clms Page number 20 >
12. The method of claim 11,
Wherein the first internal electrode comprises a core and an outer layer, wherein the core is made of a first material having a higher conductivity compared to the second material of the outer layer. To deposit one or more layers of material on a substrate.
20. The method of claim 19,
Characterized in that the first material comprises copper, silver or an alloy thereof and the second material comprises stainless steel, austenitic nickel-chromium based superalloy or nickel steel alloy, wherein the atomic layer deposition (ALD) For depositing one or more layers of material on a substrate

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