KR101507912B1 - Memory apparatus and control method thereof - Google Patents
Memory apparatus and control method thereof Download PDFInfo
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- KR101507912B1 KR101507912B1 KR20130143892A KR20130143892A KR101507912B1 KR 101507912 B1 KR101507912 B1 KR 101507912B1 KR 20130143892 A KR20130143892 A KR 20130143892A KR 20130143892 A KR20130143892 A KR 20130143892A KR 101507912 B1 KR101507912 B1 KR 101507912B1
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- bad block
- block information
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/30—Monitoring
- G06F11/3003—Monitoring arrangements specially adapted to the computing system or computing system component being monitored
- G06F11/3037—Monitoring arrangements specially adapted to the computing system or computing system component being monitored where the computing system component is a memory, e.g. virtual memory, cache
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
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- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
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Abstract
According to the method of operating a memory device according to the preferred embodiment of the present invention, bad block information (integrated bad block information) for a plurality of memory chips in an environment using a plurality of memory chips (flash memory chips) Discloses a memory device and a method of operating the memory device that can quickly and accurately recover and efficiently manage the memory device.
Description
BACKGROUND OF THE
A flash memory having a plurality of flash memory chips basically supports a memory operation of a read operation, a write operation, and an erase operation. The write operation and the read operation are executed in page units in the flash memory chip, and the erase operation is executed in block units in which pages are assembled.
However, in general, a flash memory chip has a bad block in which read, write, and erase operations are not normally performed due to various factors.
Accordingly, in a flash memory based storage device employing a flash memory, a bad block list for bad blocks in each flash memory chip of the flash memory is managed to prevent (prevent) a request for a memory operation for a bad block, .
Hereinafter, an existing method of managing bad block information associated with a bad block list will be briefly described.
Conventionally, in a flash memory-based storage device, bad block information is generated for a plurality of flash memory chips by searching for a bad block for all blocks in a plurality of flash memory chips provided in the flash memory, In a flash memory chip of one of a plurality of flash memory chips.
The flash memory based storage device reads bad block information from a single flash memory chip in which bad block information is recorded among a plurality of flash memory chips in a nonvolatile flash memory, Into a bad block list of a form that can be easily utilized and stored in a volatile storage area.
Thus, in the flash memory-based storage device, when the control software requests the flash memory to utilize the bad block list stored in the volatile storage area, a memory operation for the bad block of the flash memory is requested from the control software Can be blocked.
However, in the conventional method of managing the bad block information as described above, since one bad block information is recorded in only one flash memory chip among a plurality of flash memory chips, if the flash memory chip storing the bad block information is replaced If bad block information is lost due to damage or the like, bad block information must be generated by searching for a bad block for all blocks in a plurality of flash memory chips from the beginning.
In this way, it is not only a long time-consuming task to regenerate the bad block information, but also it is difficult to search the bad block accurately for the used flash memory chip. do.
As a result, according to the conventional method of managing bad block information, it may be difficult to maintain the bad block list as accurate and up-to-date information at all times.
Accordingly, the present invention proposes a method for quickly and accurately restoring and efficiently managing bad block information for a plurality of flash memory chips, and solves the above-described problems.
The present invention has been made in view of the above circumstances, and an object of the present invention is to quickly and accurately recover bad block information for a plurality of memory chips in an environment using a plurality of memory chips (flash memory chips) And a method of operating the memory device.
According to a first aspect of the present invention, there is provided a memory device comprising: a chip bad block information recording unit for recording chip bad block information for a bad block among blocks in a memory chip, for each of a plurality of memory chips; An information search unit for searching the plurality of memory chips for integrated bad block information for bad blocks among all blocks in the plurality of memory chips; And generating new integrated bad block information using chip bad block information recorded in each of the plurality of memory chips if the search result integrated bad block information is not confirmed, And a control unit for recording information.
Preferably, at least one block for recording integrated bad block information is designated as an integrated bad block information recording area in each of the plurality of memory chips, The integrated bad block information can be searched in the bad block information recording area.
Preferably, when the chip bad block information is not recorded in the plurality of memory chips, or when a specific memory chip in which a further bad block is searched is identified, Wherein the control unit controls the chip bad block information recording unit to record new chip bad block information in the specific memory chip and if the new chip bad block information is recorded in the specific memory chip, The information searching unit can be controlled.
Preferably, when the search result integrated bad block information is not confirmed, the control unit configures new integrated bad block information using chip bad block information recorded in each of the plurality of memory chips, Chip, and when the search result integrated bad block information is confirmed, the identified integrated bad block information may be updated using the new chip bad block information of the specific memory chip.
Preferably, when no chip bad block information is recorded in the specific memory chip, the specific memory chip is a newly replaced memory chip instead of the previous memory chip, or chip bad block information of the specific memory chip is recorded This can happen if a block is added as a bad block.
Preferably, if the search result integrated bad block information is not confirmed, integrated bad block information is recorded in the previous memory chip, or a block in which the integrated bad block information is recorded is added as a bad block Lt; / RTI >
According to a second aspect of the present invention, there is provided a method of operating a memory device, comprising: a chip bad block information recording step of recording chip bad block information for a bad block among blocks in a memory chip for each of a plurality of memory chips; An information searching step of searching, in the plurality of memory chips, integrated bad block information for bad blocks among all blocks in the plurality of memory chips; And generating new integrated bad block information using chip bad block information recorded in each of the plurality of memory chips if the search result integrated bad block information is not confirmed, And an integrated bad block information recording step of recording information.
Preferably, when chip bad block information is not recorded in the plurality of memory chips or a specific memory chip in which a further bad block is found is identified, new chip bad block information for the bad block in the specific memory chip To the specific memory chip; And searching for the integrated bad block information in the plurality of memory chips when the new chip bad block information is recorded in the specific memory chip.
Preferably, when the search result integration bad block information is not confirmed, new integrated bad block information is formed using the chip bad block information recorded in each of the plurality of memory chips and is recorded in the at least one memory chip And updating the searched integrated bad block information using the new chip bad block information of the specific memory chip when the search result integrated bad block information is confirmed.
Preferably, when no chip bad block information is recorded in the specific memory chip, the specific memory chip is a newly replaced memory chip instead of the previous memory chip, or chip bad block information of the specific memory chip is recorded And the integrated bad block information is recorded in the previous memory chip if the search result integrated bad block information is not confirmed or if the integrated bad block information is recorded in the previous memory chip This can happen if a block is added as a bad block.
Thus, according to the memory device and the operation method of the memory device of the present invention, bad block information for a plurality of memory chips can be quickly and accurately recovered and efficiently managed in an environment using a plurality of memory chips (flash memory chips) .
FIG. 1 is a block diagram of a conventional flash memory based storage device.
2 is a block diagram showing the configuration of a memory device according to a preferred embodiment of the present invention.
3 is an exemplary diagram illustrating a memory unit controlled by a memory device according to a preferred embodiment of the present invention.
4 and 5 are operation flowcharts illustrating a method of operating a memory device according to a preferred embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
Prior to describing the memory device of the present invention, the configuration of a flash memory based storage device will be briefly described with reference to FIG.
1, the flash memory-based
The
Accordingly, the flash memory based
In general, each flash memory chip provided in the
Accordingly, in the flash memory-based
Based on FIG. 1, a conventional method of managing bad block information associated with a bad block list will be briefly described below.
Conventionally, the flash memory-based
For example, as shown in FIG. 1, bad block information (a) may be recorded in the flash
Accordingly, the flash memory-based
The reason why the bad block information (a) is read from the nonvolatile flash
In the flash memory based
However, as described above, since one bad block information (a) is recorded in only one of the flash memory chips, for example, the flash
Such bad block information re-generation is not only a time-consuming operation but also makes it difficult to accurately search the bad block for the used flash memory chip, so that the accuracy of the generated bad block information is lowered.
Accordingly, the present invention proposes a memory device capable of quickly and accurately restoring and effectively managing bad block information for a plurality of flash memory chips.
Hereinafter, a configuration of a memory device according to a preferred embodiment of the present invention will be described with reference to FIG.
As shown in FIG. 2, the
The
The
The chip bad block
3 is an exemplary diagram showing a
3, the chip bad block
In this regard, the process of recording chip bad block information for each of the plurality of
As shown in FIG. 3, at least one block for recording chip bad block information is stored in each of a plurality of memory chips, that is, a plurality of
For example, if the flash
Furthermore, in each of the plurality of
For example, if the flash
As described above, the chip bad block information recording area and the integrated bad block information recording area can be preliminarily assigned to each of the flash memory chips (1 ... 7 ... N) including the flash
The chip bad block
Therefore, if the
In other words, if the
Thereafter, the chip bad block
Thereafter, the chip bad block
3, the empty normal first block (block n-2) of the chip bad block information recording area in the flash
Here, the chip bad block
At this time, the chip bad block information B is the time stamp and the chip bad block information related to the bad block number for each bad block existing in the flash
The
Here, the specific event may be a case where the operation of the
The integrated bad block information for the bad blocks among all the blocks in the plurality of
That is, the integrated bad block information is bad block information for all of the plurality of
Hereinafter, for convenience of explanation, the case where the operation of the
The
More specifically, the
According to the first embodiment, when the operation of the
Of course, according to the second embodiment, when the operation of the
Alternatively, according to the third embodiment, although the operation of the
The
More specifically, if the search result integration bad block information of the
The
Thereafter, the
For example, the
3, in the first block (block n-5) of the integrated bad block information recording area in the flash
At this time, the integrated bad block information A includes flash memory chip number and bad block number for each bad block existing in a plurality of
On the other hand, if the search result integration bad block information of the
The
Thereafter, the
For example, the
If the integrated bad block information A is recorded in the first block (block n-5) of the integrated bad block information recording area in the flash
On the other hand, in the third embodiment in which the integrated bad block information A is lost as the blocks n-5, n-4, and n-3, which are the integrated bad block information recording areas of the flash
On the other hand, when the search result integrated bad block information of the
In addition, since the search result integrated bad block information of the
For example, if the integrated bad block information A is recorded in the flash
Thereafter, the
Accordingly, in the flash memory-based storage device employing the
Further, the
Here, when no chip bad block information is recorded in a specific flash memory chip, the specific flash memory chip is a newly replaced flash memory chip instead of the previous flash memory chip, or chip bad block information of a specific flash memory chip is recorded This can happen if a block is added as a bad block.
For example, as shown in FIG. 3, in the initial operation of the
On the other hand, as shown in FIG. 3, in the initial operation of the
At this time, if a block (for example, block n-2) in which chip bad block information is recorded among the blocks in the flash
At this time, whether the block (for example, block n-2) in which the chip bad block information is recorded in the flash
Hereinafter, a specific flash memory chip in which no chip bad block information is recorded will be described.
Generally, in a device adopting a flash memory, when a flash memory chip in a flash memory is replaced, low level initialization is performed for normal operation of the flash memory.
If the low-level initialization is performed without the initial operation of the
The
Hereinafter, a specific flash memory chip in which a further bad block is searched will be described.
When a write operation or an erase operation is performed on a flash memory chip, if the operation fails, the lifetime of the failed block is exhausted. Such a block may be called a runtime bad block.
For example, to describe the flash
If the write operation or the erase operation in block 3 of the flash
At this time, if the additional bad block detected as described above is the block in which the latest chip bad block information has been recorded, the
The
That is, when a specific flash memory chip such as flash
At this time, if there is no normal block empty in the chip bad block information recording area in the flash
When the new chip bad block information is recorded in the specific flash memory chip, for example, the flash
That is, the
If the search result integration bad block information of the
In this case, if the chip bad block information is not recorded or the specific flash memory chip in which the additional bad block is found is a newly replaced flash memory chip (for example, # 1), the integrated bad block information is stored in a different flash memory chip (E.g., # 7). Alternatively, in this case, if the chip bad block information is not recorded, or if the additional bad block is a flash memory chip (for example, # 1) originally provided with the detected specific flash memory chip, Is recorded in a memory chip (for example, # 7), or when integrated bad block information is recorded in a normal block (for example, block n-5 or block n-4) in the same flash memory chip Lt; / RTI >
The
For example, in the integrated bad block information confirmed in the flash memory chip (# 7), for example, the
At this time, if there is no empty normal block in the integrated bad block information recording area in the flash
On the other hand, when the search result integration bad block information of the
In this case, if the chip bad block information is not recorded or the specific flash memory chip in which the additional bad block is found is a newly replaced flash memory chip (for example, # 7), the integrated bad block information is stored in the flash memory Or may be recorded on a chip. Alternatively, in this case, if the chip bad block information is not recorded, or if the additional bad block is a flash memory chip (for example, # 7) originally provided with the specific flash memory chip searched for, It may be the case that a block in the same flash memory chip (e.g. # 7) is added as a bad block.
The
Thereafter, the
As described above, according to the memory device according to the preferred embodiment of the present invention, since bad block information (integrated bad block information) for a plurality of flash memory chips (1 ... 7 ... N) Even if bad block information (integrated bad block information) is lost due to one flash memory chip being replaced or damaged, chip bad block information recorded in a separate recording area independently of each flash memory chip is searched for (Integrated bad block information) can be constructed by using the
Therefore, according to the present invention, it is possible to improve the trouble in the conventional bad block information management method and the problems (long time required, low accuracy, etc.) and further improve the bad block information stored in the volatile storage area Lists can also be kept up to date with more accurate information.
The configuration of at least one of the configurations in the
Hereinafter, a method of operating a memory device according to a preferred embodiment of the present invention will be described with reference to FIGS. 4 and 5. FIG.
The operation method of the
The operation method of the
The operation method of the
Accordingly, when the search result integrated bad block information is confirmed (Yes in S140), the operation method of the
For example, if integrated bad block information (A) is recorded in the flash
Thereafter, the method of operating the
Accordingly, in the flash memory-based storage device employing the
Meanwhile, the operation method of the
More specifically, the operation method of the
At this time, the method of operating the
Thereafter, the method of operating the
Thereafter, the method of operation of the
For example, the operating method of the
3, in the first block (block n-5) of the integrated bad block information recording area in the flash
As described above, the operation method of the
Further, the method of operation of the
This will be described in more detail with reference to FIG.
The operation method of the
For example, the method of operating the
The method for operating the
Alternatively, the operation method of the
The operation method of the
That is, the method of operating the
In the method of operating the
That is, in the method of operating the
If the search result integrated bad block information in step S200 is confirmed (Yes in step S210), the operation method of the
For example, the method of operation of the
The operation method of the
For example, if integrated bad block information (A) is recorded in the flash
Thereafter, the method of operating the
In the operation method of the
More specifically, the operation method of the
The operation method of the
Thereafter, the method of operation of the
For example, the operating method of the
And, the operation method of the
For example, if integrated bad block information (A) is recorded in the flash
Thereafter, the method of operating the
As described above, according to the method of operating the memory device according to the preferred embodiment of the present invention, in an environment using a plurality of memory chips (flash memory chips), bad block information ) Can be quickly and accurately restored and efficiently managed.
5, the operation method of the
The method of operating the memory device according to an embodiment of the present invention may be implemented in the form of a program command that can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions recorded on the medium may be those specially designed and constructed for the present invention or may be available to those skilled in the art of computer software. Examples of computer-readable media include magnetic media such as hard disks, floppy disks and magnetic tape; optical media such as CD-ROMs and DVDs; magnetic media such as floppy disks; Magneto-optical media, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include machine language code such as those produced by a compiler, as well as high-level language code that can be executed by a computer using an interpreter or the like. The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the present invention, and vice versa.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
According to the memory device and the operation method of the memory device according to the present invention, bad block information (integrated bad block information) for a plurality of memory chips can be quickly and accurately recovered in an environment using a plurality of memory chips (flash memory chips) In order to manage efficiently, it is not only the use of related technology but also the possibility of commercialization or sales of the applied device, as it exceeds the limit of the existing technology, It is an invention.
200: memory device
20: memory unit 210: chip bad block information recording unit
220: information search unit 230:
Claims (10)
A chip bad block information recording unit for recording chip bad block information for a bad block among blocks in the memory chip, for each of the plurality of memory chips;
An information search unit for searching the plurality of memory chips for integrated bad block information for bad blocks among all blocks in the plurality of memory chips; And
Wherein if the search result integrated bad block information is not checked, new integrated bad block information is formed using chip bad block information recorded in each of the plurality of memory chips, and the new integrated bad block information is written to at least one memory chip among the plurality of memory chips And a control unit for controlling the memory unit.
Wherein at least one block for recording integrated bad block information is designated as an integrated bad block information recording area in each of the plurality of memory chips,
The information searching unit searches for,
And searches for the integrated bad block information in the integrated bad block information recording area designated in advance for each of the plurality of memory chips.
Wherein,
Wherein if new chip bad block information is not recorded in the plurality of memory chips or a specific memory chip in which a further bad block is searched is identified, Controlling the chip bad block information recording unit to record the data on the memory chip,
And controls the information searching unit to search the integrated bad block information in the plurality of memory chips when the new chip bad block information is recorded in the specific memory chip.
Wherein,
Wherein if the search result integrated bad block information is not confirmed, new integrated bad block information is formed using the chip bad block information recorded in each of the plurality of memory chips and is recorded in the at least one memory chip,
And updates the identified integrated bad block information using the new chip bad block information of the specific memory chip when the search result integrated bad block information is confirmed.
If the chip bad block information is not recorded in the specific memory chip,
Wherein the specific memory chip is a newly replaced memory chip instead of the previous memory chip or a block in which chip bad block information of the specific memory chip is recorded is added as a bad block.
If the search result integrated bad block information is not confirmed,
Wherein integrated bad block information is recorded in the previous memory chip or a block in which the integrated bad block information is recorded is added as a bad block.
An information searching step of searching, in the plurality of memory chips, integrated bad block information for bad blocks among all blocks in the plurality of memory chips; And
Wherein if the search result integrated bad block information is not checked, new integrated bad block information is formed using chip bad block information recorded in each of the plurality of memory chips, and the new integrated bad block information is written to at least one memory chip among the plurality of memory chips And an integrated bad block information recording step in which the integrated bad block information is recorded.
Wherein if new chip bad block information is not recorded in the plurality of memory chips or a specific memory chip in which a further bad block is searched is identified, Writing to a memory chip; And
Further comprising the step of searching for integrated bad block information in the plurality of memory chips when the new chip bad block information is recorded in the specific memory chip.
Wherein if the search result integrated bad block information is not confirmed, new integrated bad block information is formed using the chip bad block information recorded in each of the plurality of memory chips and is recorded in the at least one memory chip,
Further comprising updating the searched integrated bad block information using the new chip bad block information of the specific memory chip when the search result integrated bad block information is confirmed .
If the chip bad block information is not recorded in the specific memory chip,
When the specific memory chip is a newly replaced memory chip instead of the previous memory chip or a block in which chip bad block information of the specific memory chip is recorded is added as a bad block,
If the search result integrated bad block information is not confirmed,
Wherein integrated bad block information is recorded in the previous memory chip or a block in which the integrated bad block information is recorded is added as a bad block.
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|---|---|---|---|
| KR20130143892A KR101507912B1 (en) | 2013-11-25 | 2013-11-25 | Memory apparatus and control method thereof |
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| KR20130143892A KR101507912B1 (en) | 2013-11-25 | 2013-11-25 | Memory apparatus and control method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060006554A (en) * | 2004-07-16 | 2006-01-19 | 삼성전자주식회사 | Flash memory system including bad block management unit |
| JP2006039772A (en) | 2004-07-23 | 2006-02-09 | Toshiba Corp | Memory card, nonvolatile semiconductor memory, and method for controlling semiconductor memory |
| KR20070024249A (en) * | 2005-08-26 | 2007-03-02 | 삼성전자주식회사 | Nand type flash memory for recording bad block information |
| KR20070063132A (en) * | 2005-12-14 | 2007-06-19 | 주식회사 팬택앤큐리텔 | Apparatus and method for manage a bad block |
-
2013
- 2013-11-25 KR KR20130143892A patent/KR101507912B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060006554A (en) * | 2004-07-16 | 2006-01-19 | 삼성전자주식회사 | Flash memory system including bad block management unit |
| JP2006039772A (en) | 2004-07-23 | 2006-02-09 | Toshiba Corp | Memory card, nonvolatile semiconductor memory, and method for controlling semiconductor memory |
| KR20070024249A (en) * | 2005-08-26 | 2007-03-02 | 삼성전자주식회사 | Nand type flash memory for recording bad block information |
| KR20070063132A (en) * | 2005-12-14 | 2007-06-19 | 주식회사 팬택앤큐리텔 | Apparatus and method for manage a bad block |
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