KR101465212B1 - Ultra-flexible encapsulation thin-film - Google Patents

Abstract

The present invention relates to a porous flexible multi-layered bag membrane, a method for producing the multi-layered bag membrane, and an apparatus for manufacturing the multi-layered bag membrane.

Description

[0001] ULTRA-FLEXIBLE ENCAPSULATION THIN-FILM [0002]

The present invention relates to a super-flexible multilayer pouch thin film, a method of manufacturing the same, and an apparatus for manufacturing the multilayer pouch thin film.

An organic device such as an organic light emitting diode (OLED), an organic photovoltaic cell (OPV cell), or the like has a work function that can easily be oxidized to facilitate charge transfer between the organic material and the organic material work function is low, it is very vulnerable to oxidizing substances such as moisture and oxygen. Thus, when exposed to oxygen or water vapor, a reduction in output or premature performance may occur. To solve this problem, it is necessary to use an encapsulation method that completely blocks water or oxygen from the organic device.

Currently, most organic devices are fabricated on glass substrates and use a sealing method that covers the top of the device with a glass or metal can to seal the device completely. At this time, the glass or metal lid can be completely separated from external moisture and oxygen by bonding using a glass frit or an ultraviolet curing type polymer. After encapsulation, a desiccant may be used in the glass or metal lid to remove moisture and oxygen that may remain on top of the organic device.

Since the organic devices have flexibility according to the characteristics of the organic materials, attempts have been made to maximize their properties. For this purpose, it is necessary to fabricate an organic device using a substrate such as plastic, metal foil, or flexible glass, and the encapsulating material should also be flexible. In particular, in the case of flexible organic devices using plastic as a substrate, a sealing method through a low-temperature process is required because the process temperature is limited. Encapsulation thin film technology is being developed for this purpose. The encapsulating thin film is a technique for directly depositing an inorganic thin film or an organic thin film on the surface of an organic device to cut off water or oxygen from the device. It does not require a sealant or absorbent for edge sealing, The advantage is that the device can be fabricated.

In recent years, attempts have been made to utilize multilayer organic-inorganic hybrid thin films by laminating inorganic and organic materials in multiple layers. As the inorganic material for such an organic / inorganic multilayer thin film, a metal oxide such as aluminum oxide is mainly used. As the organic material, an acrylic polymer polymerized through ultraviolet curing after spray coating an acrylic monomer is mainly used. Korean Patent Laid-Open Publication No. 10-2011-0049477 relates to a multilayer thin film-type sealing film and a method for manufacturing the same, wherein a protective layer made of aluminum oxide, a barrier layer made of single or double silicon nitride, a mechanical protective layer made of silicon dioxide Layered sealing film comprising a laminated layer. However, the multilayer encapsulation layer may be formed by forming a thin protective layer and a barrier layer by ALD and CVD methods, respectively, and then forming a mechanical protective layer by discharging a silicon oxide solution by a spray method using a sol- Since the deposition of the thin film takes place in a separately separated apparatus, continuous transfer is required, and it takes a long time to deposit the thin film, which is disadvantageous in that the whole process time is long.

In order to solve such a problem, it is required to develop a process that can simplify the process and shorten the entire process time when forming the multilayered bag thin film.

The present invention provides a multi-layer flexible pouch thin film, a method of manufacturing the same, and an apparatus for manufacturing the multi-ply pouch thin film.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, there is provided a semiconductor device comprising: an inorganic thin film including a metal oxide formed on a substrate; and an organic thin film including a polymer formed on the inorganic thin film, wherein the inorganic thin film and the organic thin film are alternately Layered pouch thin film.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an inorganic thin film containing a metal oxide on a substrate; and forming an organic thin film containing a polymer on the inorganic thin film, And forming an organic thin film comprising a polymer on the inorganic thin film by alternately laminating the inorganic thin film and the organic thin film on a substrate, .

The third aspect of the present invention comprises a substrate loading unit to which a substrate is loaded, an inorganic thin film deposition unit for depositing an inorganic thin film on the substrate, and an organic thin film deposition unit for depositing an organic thin film on the substrate, Wherein the deposition unit and the organic thin film deposition unit are sequentially connected and the loading unit alternately moves the inorganic thin film deposition unit and the organic thin film deposition unit so that the inorganic thin film and the organic thin film are alternately deposited on the substrate, There is provided an apparatus for manufacturing a superflexible multilayered bag thin film.

The multi-layered bag thin film according to the present invention can reduce the thickness of each of the inorganic thin films because the inorganic material is divided into several layers, thereby reducing the breaking property of the inorganic materials and improving the flexibility of the entire thin film. In addition, since the organic thin film disposed between the inorganic thin films has better elasticity than the inorganic thin film, the effect of improving the bending properties of the entire thin film can be also given.

In addition, even when moisture or oxygen penetrates through defects existing in the inorganic thin film, the path through which moisture or oxygen can permeate can be made very long, and therefore, the effect of preventing moisture permeation can be greatly increased.

According to the present invention, the apparatus for producing a multi-layer flexible pouch thin film according to the present invention can reduce the processing time in manufacturing the multi-layered pouch thin film by advancing the deposition of the inorganic material and the organic material in the same apparatus.

1 (a) shows an inorganic thin film according to one embodiment of the present invention, and FIGS. 1 (b) to 1 (f) show an inorganic thin film according to an embodiment of the present invention and an organic thin film Layered bag thin film.
2 is a schematic diagram illustrating a spatial atomic layer deposition apparatus according to an embodiment of the present invention;
3 is a schematic view showing an apparatus for growing a 5 nm inorganic thin film and an organic thin film according to an embodiment of the present invention.
FIG. 4 is a schematic view showing a device for growing a 0.11 nm aluminum oxide thin film and a plasma polymer thin film according to an embodiment of the present invention.
5 is a schematic view showing an apparatus for producing a multilayer encapsulating membrane according to an embodiment of the present invention.
6 is a schematic view showing an apparatus for producing a multilayer encapsulating membrane according to an embodiment of the present invention.
7 is a schematic view showing an apparatus for producing a multilayer encapsulating membrane for vertical film formation according to an embodiment of the present invention.
8 is a cross-sectional electron micrograph of a multi-layered bag thin film formed in 20 cycles according to an embodiment of the present invention.
FIG. 9 is a graph showing changes in performance of the organic light emitting device before the formation of the multilayer encapsulation thin film and after the formation of the multilayer encapsulation thin film according to an embodiment of the present invention.
10 is a photograph of a flexible organic light emitting device having a multilayered pouch thin film according to an embodiment of the present invention.
11 is a graph showing changes in water vapor transmission rate (WVTR) according to the number of cycles of an inorganic thin film and a multilayered bag thin film according to an embodiment of the present invention.
12 is a graph comparing bending properties of an inorganic thin film and an 8-cycle multilayered bag thin film according to an embodiment of the present invention.
13 is a graph comparing bending properties of an inorganic thin film and a multilayered bag thin film according to an embodiment of the present invention.
FIG. 14 is a graph showing an improvement in bending characteristics at the neutral plane of the 8-cycle multi-layered bag thin film and the 200-cycle multi-layered bag thin film according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as " including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms " about ", " substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) " or " step " used to the extent that it is used throughout the specification does not mean " step for.

Throughout this specification, the term " combination thereof " included in the expression of the machine form means one or more combinations or combinations selected from the group consisting of the constituents described in the expression of the machine form, And the like.

Throughout this specification, the description of "A and / or B" means "A or B, or A and B".

Throughout the present specification, the term "plasma polymer" refers to a polymer formed by radical polymerization of a radical of a monomolecular organic material in a plasma into a highly reactive radical.

Hereinafter, embodiments and examples of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these embodiments and examples and drawings.

According to a first aspect of the present invention, there is provided a semiconductor device comprising: an inorganic thin film including a metal oxide formed on a substrate; and an organic thin film including a polymer formed on the inorganic thin film, wherein the inorganic thin film and the organic thin film are alternately Layered pouch thin film.

The multilayer pouch thin film according to the present invention may be formed by laminating the inorganic thin film 100 and the organic thin film 200 in order, as shown in FIG. 1, but the present invention is not limited thereto. For example, the periodic number of the multilayer encapsulation thin film may be from about 2 cycles to about 200 cycles, but the present invention is not limited thereto. For example, the periodic number of the multilayer encapsulating thin film may be from about 2 cycles to about 200 cycles, from about 4 cycles to about 200 cycles, from about 8 cycles to about 200 cycles, from about 10 cycles to about 200 cycles, from about 20 cycles to about 200 From about 50 cycles to about 200 cycles, from about 70 cycles to about 200 cycles, from about 100 cycles to about 200 cycles, from about 130 cycles to about 200 cycles, from about 150 cycles to about 200 cycles, from about 180 cycles to about 200 cycles, From about 2 cycles to about 180 cycles, from about 4 cycles to about 180 cycles, from about 8 cycles to about 180 cycles, from about 10 cycles to about 180 cycles, from about 20 cycles to about 180 cycles, from about 50 cycles to about 180 cycles, About 150 cycles to about 180 cycles, about 2 cycles to about 150 cycles, about 4 cycles to about 150 cycles, about 8 cycles to about 100 cycles, about 100 cycles to about 180 cycles, about 130 cycles to about 180 cycles, About 150 cycles, about 10 cycles to about 150 cycles, about 20 cycles From about 50 cycles to about 150 cycles, from about 70 cycles to about 150 cycles, from about 100 cycles to about 150 cycles, from about 130 cycles to about 150 cycles, from about 2 cycles to about 130 cycles, from about 4 cycles to about 150 cycles 130 cycles, about 8 cycles to about 130 cycles, about 10 cycles to about 130 cycles, about 20 cycles to about 130 cycles, about 50 cycles to about 130 cycles, about 70 cycles to about 130 cycles, From about 2 cycles to about 100 cycles, from about 4 cycles to about 100 cycles, from about 8 cycles to about 100 cycles, from about 10 cycles to about 100 cycles, from about 20 cycles to about 100 cycles, from about 50 cycles to about 100 cycles, From about 10 cycles to about 100 cycles, from about 20 cycles to about 70 cycles, from about 50 cycles to about 100 cycles, from about 2 cycles to about 70 cycles, from about 4 cycles to about 70 cycles, from about 8 cycles to about 70 cycles, About 70 cycles, about 2 cycles to about 50 cycles, about 4 cycles to about 50 weeks From about 8 cycles to about 20 cycles, from about 10 cycles to about 50 cycles, from about 20 cycles to about 50 cycles, from about 2 cycles to about 20 cycles, from about 4 cycles to about 20 cycles, from about 8 cycles to about 20 cycles, From about 10 cycles to about 20 cycles, from about 2 cycles to about 10 cycles, from about 4 cycles to about 10 cycles, from about 8 cycles to about 10 cycles, from about 2 cycles to about 8 cycles, from about 4 cycles to about 8 cycles, Cycle to about 4 cycles, but the present invention is not limited thereto. The thickness of each of the inorganic thin films 100 can be reduced as the number of cycles of the multilayer encapsulating thin film increases and the path through which water passes through the cracks of the inorganic thin film 100 becomes longer, And the flexibility of the organic thin film 200 is also improved.

According to an embodiment of the present invention, the metal oxide is selected from the group consisting of aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), zinc oxide, silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ) SiC), silicon oxynitride (Si ₂ N ₂ O), silicon carbonates (SiOC), and combinations thereof.

According to an embodiment of the present invention, the monolayer of inorganic thin film may have a thickness of about 0.1 nm to about 20 nm, but may not be limited thereto. For example, from about 0.1 nm to about 20 nm, from about 1 nm to about 20 nm, from about 2.5 nm to about 20 nm, from about 5 nm to about 20 nm, from about 10 nm to about 20 nm, from about 1 nm to about 5 nm, from about 2.5 nm to about 5 nm, from about 1 nm to about 10 nm, from about 2.5 nm to about 10 nm, from about 5 nm to about 10 nm, from about 0.1 nm to about 5 nm, From about 0.1 nm to about 2.5 nm, from about 1 nm to about 2.5 nm, or from about 0.1 nm to about 1 nm, but may not be limited thereto.

According to one embodiment of the present invention, the polymer may include, but is not limited to, a polymer selected from the group consisting of a plasma polymer, an acrylic polymer, and combinations thereof. For example, the plasma polymer may be selected from the group consisting of hexamethyl disiloxane (HMDSO), 1,4-epoxy-1,3-butadiene (hereinafter, Quot; furan "), hexane, and combinations thereof. ≪ / RTI > For example, the acrylic polymer may be selected from the group consisting of acrylates, urethane acrylates, polyacrylates, polyalkyl acrylates, polyacrylamides, ethylene-acrylic acid copolymers, and combinations thereof However, the present invention is not limited thereto.

According to one embodiment of the present invention, the monolayer of the organic thin film 200 may have a thickness of about 20 nm to about 2 m, but the present invention is not limited thereto. For example, the organic thin film may have a thickness of from about 20 nm to about 2 탆, from about 50 nm to about 2 탆, from about 100 nm to about 2 탆, from about 300 nm to about 2 탆, from about 500 nm to about 2 탆, from about 1 nm to about 2 um, from about 20 nm to about 1 um, from about 50 nm to about 1 um, from about 100 nm to about 1 um, from about 300 nm to about 2 nm, from about 900 nm to about 2 um, From about 500 nm to about 1 탆, from about 700 nm to about 1 탆, from about 900 nm to about 1 탆, from about 20 nm to about 900 nm, from about 50 nm to about 900 nm, from about 100 nm to about 900 nm, about 300 nm to about 900 nm, about 500 nm to about 900 nm, about 700 nm to about 900 nm, about 20 nm to about 700 nm, about 50 nm to about 700 nm, About 500 nm to about 500 nm, about 300 nm to about 500 nm, about 500 nm to about 700 nm, about 20 nm to about 500 nm, about 50 nm to about 500 nm, nm to about 300 nm, from about 50 nm to about 300 nm, from about 100 nm to about 300 nm, From about 20 nm to about 100 nm, from about 50 nm to about 100 nm, or from about 20 nm to about 50 nm.

When the multi-layered bag thin film according to the present invention is positioned on a neutral plane where tensile force and compressive force can be canceled, the probability of occurrence of defects due to bending may be lowered, but the present invention is not limited thereto. For example, when the same material is used for the upper and lower portions of the multilayer thin film, the multilayer encapsulating thin film may be positioned on the neutral plane, but the present invention is not limited thereto. In the case of a perfect up-and-down symmetry in theory, the occurrence of defects can also be prevented since the neutral plane is not subjected to tensile force and / or compressive force. However, since a complete up-and-down symmetry can not be obtained in an actual process, a certain level of tensile force and / or compressive force may occur, but the present invention is not limited thereto.

According to a second aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming an inorganic thin film containing a metal oxide on a substrate; and forming an organic thin film containing a polymer on the inorganic thin film, And forming an organic thin film comprising a polymer on the inorganic thin film by alternately laminating the inorganic thin film and the organic thin film on a substrate, . The present invention can be applied to the multi-layered porous flexible membrane according to the first aspect of the present invention.

According to one embodiment of the present invention, the formation of the inorganic thin film may be performed by atomic layer deposition (ALD). When the inorganic thin film is formed using the atomic layer deposition method, an inorganic thin film having a thickness of about 20 nm or less may be formed, but the present invention is not limited thereto. For example, the inorganic thin film may have a thickness of about 20 nm, about 18 nm, about 16 nm, about 14 nm, about 12 nm, about 10 nm, about 8 nm, about 6 nm, nm or less, about 2 nm or less, about 1 nm or less, or about 0.5 nm or less, but may not be limited thereto.

The formation of the organic thin film according to the present invention may be performed by a chemical vapor deposition method or an atomic layer deposition method. For example, when the organic thin film includes a plasma polymer, the organic thin film may be formed through radical polymerization by converting an organic monomer into a radical in a plasma, but the present invention is not limited thereto. The monomer for forming the plasma polymer is not limited, and any organic monomer may be used to deposit the plasma polymer, but the present invention is not limited thereto. For example, the monomer may be selected from the group consisting of hexamethyl disiloxane (HMDSO), 1,4-epoxy-1,3-butadiene, furan, hexane, But may not be limited thereto. For example, when the organic thin film includes an acrylic polymer, the organic thin film may be formed through ultraviolet curing after the application of the monomer, but may not be limited thereto. For example, the acrylic polymer may be selected from the group consisting of acrylates, urethane acrylates, polyacrylates, polyalkyl acrylates, polyacrylamides, ethylene-acrylic acid copolymers, and combinations thereof However, the present invention is not limited thereto. The single layer of the organic thin film according to the present invention may have a thickness of about 20 nm to about 2 탆 depending on the application amount of the monomer and / or the intensity of ultraviolet rays, but the present invention is not limited thereto.

The deposition of the inorganic thin film and / or the organic thin film according to the present invention may be performed at a temperature ranging from room temperature to about 120 ° C, but is not limited thereto. For example, the deposition of the inorganic thin film and / or the organic thin film may be performed at a temperature of about < RTI ID = 0.0 > 120 C, < / RTI > From about 90 DEG C to about 120 DEG C, from about 105 DEG C to about 120 DEG C, from ambient temperature to about 105 DEG C, from about 30 DEG C to about 105 DEG C, from about 45 DEG C to about 105 DEG C, from about 60 DEG C to about 105 DEG C, About 90 deg. C to about 90 deg. C, from about 60 deg. C to about 90 deg. C, from about 75 deg. C to about 105 deg. From about 30 C to about 75 C, from about 30 C to about 75 C, from about 45 C to about 75 C, from about 60 C to about 75 C, from ambient temperature to about 60 C, from about 30 C to about 60 C, From about room temperature to about 45 ° C, from about 30 ° C to about 45 ° C, or from room temperature to about 30 ° C.

The third aspect of the present invention comprises a substrate loading unit to which a substrate is loaded, an inorganic thin film deposition unit for depositing an inorganic thin film on the substrate, and an organic thin film deposition unit for depositing an organic thin film on the substrate, Wherein the deposition unit and the organic thin film deposition unit are sequentially connected and the loading unit alternates with the inorganic thin film deposition unit and the organic thin film deposition unit to deposit the inorganic thin film and the organic thin film alternately on the substrate. There is provided an apparatus for manufacturing a superflexible multilayered bag thin film.

The inorganic thin film according to the present invention is deposited on a substrate using an ALD method. In order to deposit the inorganic thin film at a high rate, a spatial ALD may be used instead of a temporal ALD. The spatially atomic layer deposition method is a method for spatially arranging a raw material module for atomic layer deposition on a moving substrate, as shown in FIG. 2, in which a process of injecting and exhausting the raw materials for a short time is repeated in a time- The process time of the spatially atomic layer deposition method may be much faster than the temporal atomic layer deposition method. For example, when a multilayer thin film having a thickness of about 5 nm is formed using a spatially atomic layer deposition apparatus, an apparatus schematically shown in FIG. 3 may be used. The plasma polymer module can grow a plasma polymer having a desired thickness in one module according to the design of the apparatus.

As shown in FIG. 4, the number of modules necessary for sequentially stacking the aluminum oxide thin film and the plasma polymer thin film of about 0.11 nm thickness according to one embodiment of the present invention can be remarkably reduced, Can be realized. With this simplified process device, it is possible to fabricate a multilayer encapsulant thin film having a great flexibility and satisfying the WVTR condition of the organic light emitting device in a short time.

The organic thin film deposition unit according to the present invention may include, but not limited to, an ultraviolet curing unit disposed on both sides of the monomer injection unit, as shown in FIG.

As shown in FIG. 5, the apparatus for manufacturing a multilayer bag thin film according to the present invention includes the inorganic thin film deposition unit and the organic thin film deposition unit alternately positioned, or alternatively, as shown in FIG. 6, May be located at the beginning or at the end. For example, when the organic thin film deposition unit is positioned first or last, the inorganic thin film deposition unit and the organic thin film deposition unit may proceed in an independent space in the same apparatus, but the present invention is not limited thereto.

When the multilayer encapsulation thin film according to the present invention is formed in a large area, as shown in FIG. 7, the multilayer encapsulation thin film can be formed vertically.

Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited thereto.

[ Example ]

Aluminum oxide thin films were deposited by atomic layer deposition and inorganic thin films were deposited by plasma radical polymerization using plasma. Trimethyl aluminum (TMA) was used as an aluminum raw material for the atomic layer deposition of the aluminum oxide thin film, water was used as an oxidizing agent, and atomic layer deposition of the aluminum oxide thin film was performed at 80 ° C. The thickness of the aluminum oxide thin film that can grow in one cycle was about 0.11 nm.

To grow the plasma polymer thin film, hexamethyl disiloxane (HMDSO), 1,4-epoxy-1,3-butadiene, furan, or hexane was used as an organic monomer. The raw material was supplied using argon (Ar) transport gas in a plasma of about 50 W, and the radicals generated in the plasma were radically polymerized on the substrate surface to form a polymer. The formed plasma polymer was transparent and deposited at a rate of about 50 nm per minute.

FIG. 8 shows an electron micrograph of the formed multi-layered bag thin film. 8 is a photograph showing a structure in which aluminum oxide is about 1 nm in thickness and 20 nm in thickness of plasma polymer is laminated for 20 cycles. Even after forming the multilayer encapsulating thin film on the organic light emitting device, . As shown in FIG. 9, the organic light emitting device having the multilayer encapsulation thin film is similar or superior to the organic light emitting device before forming the encapsulation thin film in luminance, current density, and current efficiency. FIG. 10 is a photograph of an organic light emitting device exhibiting excellent flexibility in which the multilayer encapsulation thin film was formed, and it was confirmed that the organic light emitting device having the multilayer encapsulation thin film was very flexible.

The moisture permeability of the multilayer encapsulating thin film was mainly dependent on the characteristics of the inorganic thin film. The moisture permeation preventing effect of the multilayer encapsulating thin film was found through the water vapor transmission rate (WVTR) shown in FIG. The WVTR can be obtained by measuring the time when a certain amount of electrically conductive calcium is oxidized by water permeated through the multilayer film and converted into calcium oxide which is not electrically conductive.

Evaluation of bending properties of thin films

12 is a graph showing the results of a bend test before and after a bend test with a single aluminum oxide thin film of about 20 nm thickness and a multilayered biphenyl thin film having 8 cycles at 10,000 bend radii of 3 cm, 2 cm, 1 cm, and 0.5 cm The single aluminum oxide thin film and the 8 cycle multilayer thin film showed 18 hours and 25 hours, respectively, until the calcium was completely oxidized before the bending test. The longer the time, the better the water permeation prevention property. Therefore, the longer the time, the lower the WVTR characteristics. After bending 10,000 times at a bending radius of 3 cm, the calcium of the single aluminum oxide thin film was completely reduced to about 14 hours, but the decrease of the thickness of the multilayer thin film was relatively small. After bending with a smaller bending radius, the time was markedly reduced with a single aluminum oxide thin film, but the multilayer thin film showed almost no change, and even if 10,000 bends were performed at a bending radius of 1 cm It was confirmed that there was no significant change in the water permeation prevention characteristics. However, when tested with a bending radius of 0.5 cm, both the single aluminum oxide thin film and the multi-layer aluminum oxide thin film completely lose their moisture permeation preventing properties. As shown in FIG. 13, In the case of the encapsulated thin film, the moisture permeation reduction rate is about 20% even after 10,000 bending tests with a bending radius of 0.5 cm.

14 shows the bending characteristics of the multilayer bag thin film having 8 cycles and the multilayer bag thin film having 200 cycles, wherein the multilayer encapsulating thin film was positioned on the neutral plane by using the same material on the upper and lower sides of the multilayered film. As shown in FIG. 14, when the multilayer encapsulating thin film was placed on the neutral plane, the bending property was improved as compared with the multilayer encapsulating thin film. This is because the multilayer encapsulating thin film located on the neutral plane can prevent the occurrence of defects due to no tensile force and / or compressive force as compared with the multilayer encapsulating thin film not located on the neutral plane.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: inorganic thin film
200: organic thin film

Claims (11)

An inorganic thin film containing a metal oxide formed on a substrate, and
The organic thin film including the polymer formed on the inorganic thin film
Wherein the multi-
Wherein the inorganic thin film and the organic thin film are alternately stacked in a plurality of layers,
Wherein the polymer is selected from the group consisting of a plasma polymer selected from the group consisting of hexamethyldisiloxane, furan, hexane, and combinations thereof, an acrylic polymer, and combinations thereof,
The inorganic thin film is formed by atomic layer deposition,
Wherein the organic thin film is formed by a chemical vapor deposition method or an atomic layer deposition method.
Multilayer bag thin film.
The method according to claim 1,
Wherein the metal oxide comprises a material selected from the group consisting of aluminum oxide, zirconium oxide, zinc oxide, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonate, and combinations thereof.
delete delete The method according to claim 1,
Wherein the acrylic polymer comprises one selected from the group consisting of acrylates, urethane acrylates, polyacrylates, polyalkyl acrylates, polyacrylamides, ethylene-acrylic acid copolymers, and combinations thereof. .
The method according to claim 1,
Wherein the monolayer of the inorganic thin film has a thickness of 0.1 nm to 20 nm.
The method according to claim 1,
Wherein the single layer of the organic thin film has a thickness of 20 nm to 2 占 퐉.
Forming an inorganic thin film containing a metal oxide on the substrate by atomic layer deposition; and
Forming an organic thin film including a polymer on the inorganic thin film by a chemical vapor deposition method or an atomic layer deposition method
Lt; / RTI >
Forming an inorganic thin film on the substrate and forming an organic thin film including a polymer on the inorganic thin film by alternately laminating the inorganic thin film and the organic thin film alternately,
A method for producing a multilayer bag thin film,
Wherein the polymer is selected from the group consisting of a plasma polymer selected from the group consisting of hexamethyldisiloxane, furan, hexane, and combinations thereof, an acrylic polymer, and combinations thereof.
A method for producing a multilayer bag thin film.
delete delete A substrate loading section on which the substrate is loaded,
An inorganic thin film deposition unit for depositing an inorganic thin film on the substrate by atomic layer deposition; and
And an organic thin film deposition unit for depositing an organic thin film on the substrate by a chemical vapor deposition method or an atomic layer deposition method,
Wherein the inorganic thin film deposition unit and the organic thin film deposition unit are sequentially connected,
Wherein the loading section alternates between the inorganic thin film deposition section and the organic thin film deposition section to alternately deposit the inorganic thin film and the organic thin film on the substrate,
Wherein the organic thin film is selected from the group consisting of a plasma polymer selected from the group consisting of hexamethyldisiloxane, furan, hexane, and combinations thereof, an acrylic polymer, and combinations thereof.
(Manufacturing apparatus for multilayer pouch thin film).

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