KR101443854B1 - Modeling structure for switching device and method for electromagnetic transients program simulation using it - Google Patents

Abstract

Provided are a structure for modeling a switching device and an electromagnetic transient program (EMTP) simulation method using the same. According to an embodiment of the present invention, the structure for modeling the switching device, which is applied to the EMTP simulation method, comprises the switching device; and a pair of variable resistance devices connected in series and in parallel respectively to the switching devices, wherein a resistance value of the variable resistance devices is applied to the EMTP simulation method by calculating the losses occurred during switching the switching device depending on the variable resistance value of the variable resistance devices.

Description

TECHNICAL FIELD [0001] The present invention relates to a switching device modeling structure and an EMTP simulation method using the switching device modeling structure.

The present invention relates to a switching device modeling structure and an EMTP simulation method using the switching device modeling structure. More specifically, the efficiency of the power system can be easily calculated by directly measuring the input and output power by reflecting the switching loss directly to the EMTP simulation circuit. And an EMTP simulation method using the same.

The power system should be operated in steady state while maintaining equilibrium of power supply and supply, and designed to withstand the maximum possible disturbance. Generally, disturbances in the power system are caused by transient phenomena, so design conditions for the plant must be determined under transient conditions rather than normal conditions. EMTP (Electro-Magnetic Transients Program), developed to analyze the transient phenomenon of such power systems, is a simulation program for hydraulic calculations widely used in various countries around the world.

1 is a diagram illustrating a switching device modeling structure applied to a conventional EMTP simulation.

Referring to FIG. 1, a conventional EMTP simulation is based on the ON and OFF states of the IGBT 2 or the diode 3 serving as the switch 1, that is, . This simple method is sufficient to simulate the electrical behavior of a power system, but is insufficient to predict system efficiency, maximum junction temperature, and so on. The existing methods only require calculation of the loss value without requiring a very large number of parameters or being directly reflected in the circuit in the simulation.

United States Patent No. 8,093,956 (registered on January 10, 2012) Japanese Patent Application Laid-Open No. 8-227639 (published September 3, 1996) Japanese Patent Application Laid-Open No. 2009-201096 (published on September 3, 2009)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problem, and it is an object of the present invention to provide a switching device capable of easily and accurately simulating a change in efficiency of a system by switching losses, Modeling structure and an EMTP simulation method using the modeling structure.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an exemplary embodiment of the present invention, there is provided a switching device modeling structure applied to an EMTP simulation, the switching device modeling structure comprising: a switching device; And a pair of variable resistive elements connected in series and in parallel to the switching elements, wherein a loss occurring at the time of switching of the switching element as the resistance value of the variable resistive element is varied is applied to the EMTP simulation do.

According to another aspect of the present invention, there is provided an EMTP simulation method including forming a switching device modeling structure including a switching device and a pair of variable resistors connected in series and parallel to the switching device, A modeling step of varying a resistance value of the variable resistor; A measuring step of measuring a voltage, a current, and a junction temperature of the switching device in the switching device modeling structure; And an operation step of calculating a loss due to the switching operation of the switching element.

Other specific details of the invention are included in the detailed description and drawings.

According to the present invention, the switching signal used in the existing EMTP simulation is used as it is, the interpolation function provided by the existing model is applied, and the loss due to the switching is directly reflected in the simulation circuit to measure the power of the input and output, Efficiency can be easily calculated.

1 is a diagram illustrating a switching device modeling structure applied to a conventional EMTP simulation.
2 is a diagram illustrating a switching device modeling structure applied to EMTP simulation according to an embodiment of the present invention.
3 is a graph showing a switching waveform of the IGBT element.
4 is a diagram illustrating a process of measuring a value required for calculating a switching loss in a circuit to which the switching element modeling structure of FIG. 2 is applied.
5A and 5B are graphs showing the turnon loss and the turnoff loss of the IGBT device, respectively.
6 is a graph showing a switching waveform of a diode element.
7A and 7B are graphs showing reverse recovery current and reverse recovery time of diode elements, respectively.
8A and 8B are graphs showing the conduction loss of the IGBT device and the conduction loss of the diode device, respectively.
FIG. 9 is a flowchart of an EMTP simulation method using the switching device modeling structure of FIG. 2 according to an embodiment of the present invention.
10 is a detailed flowchart of the EMTP simulation method of FIG.
11 is a structural diagram of a 3 kW PV PCS (Photo-Voltaic Power Conditioning System).
FIG. 12 is a graph showing the results of EMTP simulation of an IGBT element located at the bottom in the converter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention.
FIG. 13 is a graph showing the results of EMTP simulation of a diode element located at an upper portion of the converter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention.
FIG. 14 is a graph showing EMTP simulation results of an IGBT element and a diode element located at the upper left in the inverter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention.
FIG. 15 is a graph showing the efficiency of the system by the EMTP simulation method and the efficiency of the system by the experiment according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. &Quot; comprises " and / or "comprising" when used in this specification is taken to specify the presence or absence of one or more other components, steps, operations and / Or additions.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

2 is a diagram illustrating a switching device modeling structure applied to EMTP simulation according to an embodiment of the present invention.

Referring to FIG. 2, a switching device modeling structure applied to the EMTP simulation according to an embodiment of the present invention is a switching device modeling structure applied to EMTP simulation. The switching device 10 and the switching device 10 comprising the variable resistor element of the pair being connected in series and in parallel (r _s, r _sh), upon switching of the variable resistor element of the switching element 10, resulting from the variable resistance value of (r _s, r _sh) The generated loss is calculated and applied to the EMTP simulation. Here, the switching element 10 is an insulated-gate bipolar transistor (IGBT) element 11 or a diode element 12.

That is, the switching element modeling structure applied to the EMTP simulation according to an embodiment of the present invention includes a serial variable resistor (r _s ) and a parallel variable resistor (R _s ) in a conventional switch model r _sh ). At this time, the loss occurring in the series variable resistance element r _s and the parallel variable resistance element r _sh is calculated (Loss Estimation, 20), and the serial variable resistance element r _s is used for the conduction loss and the switching Is used to calculate the switching turnon loss, and the parallel variable resistive element r _sh is used to calculate the switching turnoff loss. Calculating Specifically, the series variable resistor element (r _s) is the switching turn-on losses (switching turnon loss) and conduction losses (conduction loss), a conduction loss (conduction loss) of the diode elements 12 of the IGBT element 11 . At this time, the switching turnon loss of the diode element 12 can be neglected because it is very small. The parallel variable resistive element r _sh is also used to calculate the switching turnoff loss of the IGBT element 11 and the switching turnoff loss of the diode element.

Hereinafter, a specific calculation process of the losses of the IGBT element and the diode element will be described.

3 is a graph showing a switching waveform of the IGBT element. 4 is a diagram illustrating a process of measuring a value required for calculating a switching loss in a circuit to which the switching element modeling structure of FIG. 2 is applied. 5A and 5B are graphs showing the turnon loss and the turnoff loss of the IGBT device, respectively.

Generally, the switching waveform of the IGBT element according to the switching Ssw in FIG. 2 is the same as that of FIG.

및

에 각각 발생한다. 이러한 스위칭 손실을 계산하도록 필요한 값을 시뮬레이션 상에서 측정해야 한다. 이는 다이오드 소자도 마찬가지이다. 손실의 계산에 스위칭 소자의 전압, 전류, 정션 온도(junction temperature) 등이 필요하다.Referring to FIG. 3, the switching turn-on loss and the turnoff loss of the IGBT device correspond to the corresponding switching times

And

Respectively. The values required to calculate this switching loss must be measured in a simulation. This also applies to diode elements. The voltage, current, junction temperature, etc. of the switching element are required to calculate the loss.

4, the switching element modeling structure includes a pair of edge detectors 30, one unidirectional part 40, one unidirectional part 40, and one unidirectional part 40 in order to measure, on the simulation, And may further include a sample and hold section 50. After calculating the necessary value by using this, the resistances of the direct and parallel variable resistors are adjusted according to the switching operation to generate an appropriate loss according to the simulation time step. Here, the sample-and-hold unit 50 samples and holds a continuously changing signal, and the pair of edge detectors 30 detect ON / OFF of switching, and the monocular unit 40 ) Keeps the input for a certain time (T) even if a short pulse is input.

및

로부터 각각 턴온 전압(

), 턴온 전류(

), 턴오프 전압(

), 턴오프 전류(

)를 측정할 수 있다. 스위칭 소자의 턴온 및 턴오프 동안 딜레이(delay)가 있고, 다이오드 소자의 역회복 시간(reverse recovery time,

) 동안 딜레이(delay)가 있다.Referring again to Figure 4,

And

Respectively.

), Turn-on current

), Turn-off voltage (

), Turn-off current (

) Can be measured. There is a delay during the turn-on and turn-off of the switching element, and the reverse recovery time of the diode element,

≪ / RTI >

Input and output information of each function of FIG. 4 is shown in Table 1 below.

To reflect the exact switch power loss, we calculate the energy generated during switching using a fourth-order polynomials curve fitting method using the values given in the datasheet. Considering the junction temperature, we consider the IGBT switching turn-on loss, switching turn-off loss, conduction loss and diode switching turn-off loss, and conduction loss. As described above, the switching turn-on loss of the diode is negligible so small that it is not considered.

Figures 5A and 5B show turnon loss and turnoff loss of IGBT devices, respectively.

600V의 데이터시트로부터 쉽게 획득할 수 있다. 또한, 콜렉터 전류(collector current)가 40A에서 갑자기 변함을 알 수 있다. 실험 테스트에서 사용되는 3kW PV PCS(Photo-Voltaic Power Conditioning System)는 정격 전류 13.6A로 동작하므로, 상기 40A에서의 급격한 변화가 제안된 스위칭 소자 모델링 구조의 퍼포먼스(performance)를 확인하는데 문제가 되지 않는다.As shown in Figs. 5A and 5B, the switching turn-

It can be easily obtained from the data sheet of 600V. It can also be seen that the collector current suddenly changes at 40A. Since the 3kW PV PCS (Photo-Voltaic Power Conditioning System) used in the experimental test operates at a rated current of 13.6A, the abrupt change at 40A is not a problem for confirming the performance of the proposed switching device modeling structure .

가 25℃ 및 125℃인 경우, 스위칭 턴온 손실

을 근사화하기 위한 4차 폴리노미얼(fourth-order polynomials)은 다음의 수학식 1, 2로 표현된다.Junction temperature

Is 25 DEG C and 125 DEG C, the switching turn-on loss

The fourth-order polynomials are approximated by the following equations (1) and (2).

는 다음의 수학식 3으로 표현된다. Here,

Is expressed by the following equation (3).

는 25℃ 또는 125℃이다. 또한,

및

는 다음의 수학식 4, 5로 계산된다.At this time,

Lt; RTI ID = 0.0 > 125 C. Also,

And

Is calculated by the following equations (4) and (5).

를 고려함에 의해 수정되며, 추정된

은 다음의 수학식 6과 같다.Since the power is proportional to the square of the voltage, the above equations (1) and (2)

, And the estimated

Is expressed by Equation (6).

의 예측을 위해 고려되어야 한다. 타임 스텝(time step)

가 EMTP 시뮬레이션에서 고정되므로, 스위칭 손실(switching loss)이 턴온 시간 및 턴오프 시간 동안 몇몇 타임 스텝들에서 발생한다. 그러므로, 한 번의 스위칭에서 고정된 저항값을 사용한다.In addition,

Should be considered. Time step

Is fixed in the EMTP simulation, switching losses occur in some time steps during the turn-on and turn-off times. Therefore, a fixed resistance value is used in one switching.

는 병렬 가변 저항 소자

의 최대값 및 스위치(switch)의 내부 온-상태 저항(internal on-state resistor)의 최소값으로 상기

에 의해 연산된다. 즉, 스위칭 턴온인 경우, 상기

는 다음과 같이 모델링된다.Series variable resistance element

Lt; RTI ID = 0.0 >

And the minimum value of the internal on-state resistance of the switch,

. That is, in the case of switching on,

Is modeled as follows.

Similarly, in the case of switching turn-off, Equations 6 and 7 are modeled as follows.

6 is a graph showing a switching waveform of a diode element. 7A and 7B are graphs showing the reverse recovery current and the reverse recovery time of the diode device, respectively.

Unlike the IGBT element, the switching state of the diode element depends on the direction of the current. In the switching element modeling structure 10 shown in Fig. 2, the current can be zero regardless of the simulation time step. Therefore, the operating state of the diode element can be accurately reflected in the switching element modeling structure.

Generally, the turnon loss in a diode device is negligible (less than 1%) because it is very small compared to the turnoff loss. However, the reverse recovery operation during the turn-off time causes significant losses.

및 역회복 시간(reverse recovery time)

의 정보로 스위칭 손실이 추정된다. IGBT 소자와 마찬가지로, 4차 폴리노미얼(fourth-order polynomials)로 근사화한 다이오드의 특성 곡선은 다음의 수학식 10, 11로 표현된다. 여기에서, 역회복 전류는 40A보다 작다.As shown in FIGS. 7A and 7B, a reverse recovery current is generated from a data sheet,

And reverse recovery time.

The switching loss is estimated by the information of Like the IGBT device, the characteristic curve of the diode approximated by fourth-order polynomials is expressed by the following equations (10) and (11). Here, the reverse recovery current is smaller than 40A.

가 25℃ 및 125℃이다.At this time, the junction temperature

25 < / RTI >

는 다음의 수학식 13과 같다.The loss energy due to the reverse recovery of the diode is expressed by the following Equation (12), and the parallel variable resistance element

Is expressed by the following equation (13).

8A and 8B are graphs showing the conduction loss of the IGBT device and the conduction loss of the diode device, respectively.

The nonlinear characteristics of the conduction losses of the IGBT device and the diode device can not be obtained with the conventional switching device modeling structure as a fixed internal on-state resistance. The nonlinear relationship between the voltage drop due to the switching and the current passing through the device is predicted by the switching device modeling structure according to the embodiment of the present invention. This nonlinear relationship is shown in Figs. 8A and 8B. 8A shows the collector-emitter saturation voltage characteristic for the collector current of the IGBT device, and FIG. 8B shows the collector-emitter voltage characteristic of the diode device. Lt; / RTI > the collector recovery current characteristic is shown.

는 전술한 4차 폴리노미얼(fourth-order polynomials)에 의해 근사화될 수 있으며, 다음의 수하식 14 및 15로 표현될 수 있다.Collector-emitter voltage (collector-emitter vlotage)

Can be approximated by the above-described fourth-order polynomials, and can be expressed by the following equations 14 and 15.

Therefore, by adopting the switching element modeling structure according to an embodiment of the present invention, loss due to switching can be calculated and estimated, and this can be applied to the EMTP simulation.

FIG. 9 is a flowchart of an EMTP simulation method using the switching device modeling structure of FIG. 2 according to an embodiment of the present invention.

9, an EMTP simulation method according to an embodiment of the present invention includes forming a switching device modeling structure including a switching device and a pair of variable resistors connected in series and in parallel to the switching device, A measuring step S13 of measuring a voltage, a current, and a junction temperature of the switching device in the switching device modeling structure; and a measuring step S13 of measuring a voltage, And an operation step S15 for calculating the loss.

In the modeling step S11, the switching elements of the existing EMTP simulation are replaced with switching elements each including a pair of variable resistors connected in series and in parallel.

The measuring step S13 measures the off current of the switching element modeling. When the switching element is a diode element, the reverse recovery current and the reverse recovery time are measured And when the switching device is an IGBT device, on-current, on-voltage, and off-voltage of the switching device modeling are measured.

The operation step S15 calculates a reverse recovery loss in the case of the element of the diode when the switching element is turned off and a switching turnoff in the case of the IGBT element loss. In addition, when the switching device turns on, conduction loss is calculated in the case of the diode device. In the case of the IGBT device, switching turnon loss and conduction loss are calculated. .

Hereinafter, a detailed process of calculating the loss according to the type of the switching device and the type of switching loss and applying the value to the variable resistor will be described.

10 is a detailed flowchart of the EMTP simulation method of FIG.

를 측정한 후(S23), 다이오드에 대해(S24, Yes), 상기 수학식 10 및 11에 의해 역회복 전류(reverse recovery current)

및 역회복 시간(reverse recovery time)

을 추정한다(S25). 그런 후에, IGBT 소자에 대해(S24, No), 온 전류(on current)

, 온 전압(on voltage)

, 오프 전압(off voltage)

을 측정한다(S26). Referring to FIG. 10, the switching element modeling structure of FIG. 2 is set (S21), and voltage, current, and junction temperature of a switching element (IGBT element or diode element) are measured (S22). Then, the off current of the switching element

(S24, Yes), reverse recovery current is calculated according to Equations (10) and (11) for the diode (S24)

And reverse recovery time.

(S25). Thereafter, with respect to the IGBT element (S24, No), the on current

, On voltage

Off voltage,

(S26).

을 계산한다(S40, S41, S42). 다음으로, IGBT 소자의 경우, 턴온 손실(turnon loss)

및 턴오프 손실(turnoff loss)

이 각각 상기 수학식 6 및 8에 의해 계산된다(S50, S51, S52; S60, S61, S62). 또한, 턴온 시간에서 전도 손실(conduction loss)

가 상기 수학식 14의 콜렉터-이미터 전압

에 의해 계산된다(S70, S71, S72). Then, it is determined whether the switching device operates in a turnon time and a turnoff time of the switching device (S27, S28). First, in the case of a diode device, a reverse recovery switching loss is calculated according to Equation (12) at a turn-off time,

(S40, S41, S42). Next, in the case of the IGBT device, turnon loss

And a turnoff loss.

(S50, S51, S52; S60, S61, S62), respectively. In addition, conduction loss at turn-on time,

Lt; RTI ID = 0.0 > (14) < / RTI &

(S70, S71, S72).

Hereinafter, a specific simulation result according to the EMTP simulation method according to an embodiment of the present invention will be described.

11 is a structural diagram of a 3 kW PV PCS (Photo-Voltaic Power Conditioning System).

A 3kW PV PCS (Photo-Voltaic Power Conditioning System), which is a test system for testing a specific simulation result according to the EMTP simulation method, is shown in Fig. The 3 kW PV PCS includes a DC / DC converter 110 and a PWM inverter 120, and includes a SMPS 130 serving as a DC stabilization power source and a DSP controller 140 for controlling signals. Here, the switching frequency is 20 kHz. The results of the EMTP simulation test using the PV PCS shown in FIG. 11 are shown in FIGS. 12 to 14. FIG.

FIG. 12 is a graph showing the results of EMTP simulation of an IGBT element located at the bottom in the converter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention. 13 is a graph showing the results of EMTP simulation of a diode element located at an upper portion of the converter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention. FIG. 14 is a graph showing EMTP simulation results of an IGBT element and a diode element located at the upper left in the inverter of FIG. 11 by the EMTP simulation method according to an embodiment of the present invention.

11, the EMTP simulation result of the IGBT element located at the bottom in the converter of FIG. 11 is shown in FIG. 12, and the EMTP simulation result of the diode element located at the top of the converter of FIG. 11 is shown in FIG. 13 have. At this time, the switch signal has a duty ratio of 275, and the turn-on signal of the IGBT device is applied at t = 10 μs.

의 전압이 떨어진다. 이에 반해, 시뮬레이션 타임 스텝이 2μs인 경우, 2μs의 딜레이를 보여 준다. 이것은 턴온 스위칭 시간(turnon switching time)이 주로 시뮬레이션 타임 스텝(simulation time step)에 의존함을 의미한다. 또한, IGBT 소자의 전류 및 전력 손실(전도 손실 및 스위칭 손실의 합)은 각각 도 12의 (b) 그래프 및 (c) 그래프에 도시되어 있다. 도 12의 (c) 그래프에서, 0.3μs 타임 스텝에서의 전력 손실 에너지는 스위칭 당 1.52mJ이고, 2μs 타임 스텝에서의 전력 손실 에너지는 스위칭 당 1.59mJ이며, 그 값이 매우 근사치에 있다. 반면에, IGBT 소자의 전류 및 전력 손실의 피크값은 시뮬레이션 타임 스텝에 따라 매우 상이함을 알 수 있다.In the graph of FIG. 12 (a), when the simulation time step is 0.3 占 퐏, after delay of 0.3 占 s from t = 10 占 s

. On the other hand, if the simulation time step is 2μs, it shows a delay of 2μs. This means that the turnon switching time depends mainly on the simulation time step. The current and power loss (sum of conduction loss and switching loss) of the IGBT element are shown in the graph of FIG. 12 (b) and the graph of FIG. 12 (c), respectively. In the graph of FIG. 12 (c), the power loss energy in a 0.3 microsecond time step is 1.52 mJ per switching, and the power loss energy in a 2 microsecond time step is 1.59 mJ per switching, which is very close. On the other hand, the peak values of the current and power loss of the IGBT device are very different depending on the simulation time step.

When the IGBT element is off, the voltage across the diode element is zero. As shown in the graph of FIG. 13 (a), when the IGBT element is turned on after the delay depending on the simulation time step, the state of the diode element is changed from closed to open. When the diode element is completely turned off from the graph of FIG. 13 (b), the current of the diode element becomes exactly zero by the interpolation technique. Also, from the graph of FIG. 13 (c), the reverse recovery switching loss energy in the 0.3 microsecond time step is 0.71 mJ, and the reverse recovery switching loss energy in the 2 microsecond time step is 0.66 mJ. From this, it can be seen that the peak value of the loss is very different according to the simulation time step, but the reverse recovery switching loss energy has an approximate value according to the time step.

In the PWM inverter 120 of Fig. 11, the current and power loss of the IGBT element and the diode element located at the upper left are shown in the graph of Fig. 14 (a) and the graph of Fig. 14 (b), respectively.

14 (a), the peak value of the current flowing through the IGBT element is a half waveform of the current flowing on the grid side, which is the output of the PV PCS. In the graph of FIG. 14 (b), it can be seen that the power loss of the IGBT device depends on the magnitude of the current. It is also seen that the diode element is similar except that the phase changes by 180 degrees and the current flows. It can be seen that the power loss consumed by the diode element is smaller than the power loss of the IGBT element.

FIG. 15 is a graph showing the efficiency of the system by the EMTP simulation method and the efficiency of the system by the experiment according to an embodiment of the present invention.

The efficiency of the system by the EMTP simulation method according to an embodiment of the present invention can be verified by using a 3 kW PV PCS (Photo-Voltaic Power Conditioning System), an oscilloscope, etc., Respectively.

Referring to FIG. 15, 160 measured values are represented by o, and it can be seen that the efficiency is from 79% (at 325 W) to 95% (at 3200 W). It can be seen that the simulation result by the conventional modeling structure is very different from the measured value. In contrast, the EMTP simulation results using the modeling structure according to an embodiment of the present invention show very similar results to the measured values.

A numerical comparison can be made using root-mean-square error (RMSE), as shown in Equation 16 below.

은 샘플의 수(number of samples)이고,

은 실험에 의해 측정된 효율이고,

은 EMTP 시뮬레이션에 의한 효율이다.From here,

Is the number of samples,

Is the efficiency measured by the experiment,

Is the efficiency by EMTP simulation.

In addition, European efficiency is useful as a comparison tool. The above-mentioned European efficiency aims at approximating the integration of the conversion efficiency for all-day time, and can be expressed by the following equation (17).

는 상기 European efficiency이고,

는 변환 효율(conversion efficiency)이고,

는 정격 전력 출력(rated power output)이다.From here,

Is the European efficiency,

Is the conversion efficiency,

Is the rated power output.

Errors in the conventional and EMTP simulation according to the RMSE and European efficiency are shown in Table 2 below.

As shown in Table 2 above, it can be confirmed that the error is small in the EMTP simulation according to the present invention, as compared with the conventional EMTP simulation. That is, the EMTP simulation according to the present invention can obtain a result very similar to the actual measured value.

Meanwhile, the EMTP simulation method according to an embodiment of the present invention can be implemented as one module by software and hardware, and the embodiments of the present invention described above can be implemented as a program that can be executed in a computer, And may be implemented in a general-purpose computer that operates the program using a recording medium having the program. The computer-readable recording medium is implemented in the form of a carrier wave such as a ROM, a floppy disk, a magnetic medium such as a hard disk, an optical medium such as a CD or a DVD, and a transmission through the Internet. In addition, the computer-readable recording medium may be distributed to a network-connected computer system so that computer-readable codes may be stored and executed in a distributed manner.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

10: Switching element modeling structure
11: IGBT element
12: Diode element

Claims (9)

delete delete delete delete delete A modeling step of forming a switching element modeling structure including a switching element and a pair of variable resistors connected in series and in parallel to the switching elements, respectively, and varying a resistance value of the variable resistors;
A measuring step of measuring a voltage, a current, and a junction temperature of the switching device in the switching device modeling structure; And
And calculating a loss due to the switching operation of the switching element,
Wherein the measuring step comprises:
Measuring an off current of the switching element modeling;
Measuring a reverse recovery current and a reverse recovery time when the switching device is a diode device; And
Further comprising the step of measuring an on current, an on voltage and an off voltage of the switching element modeling when the switching element is an IGBT element. delete The method according to claim 6,
Wherein,
Calculating a reverse recovery loss in the case of the diode element when the switching element is turned off and calculating a switching turnoff loss in the case of the IGBT element, Further included is an EMTP simulation method. The method according to claim 6,
Wherein,
When the switching element turns on, conduction loss is calculated in the case of the diode element, and switching turnon loss and conduction loss in the case of the IGBT element are calculated Further comprising the steps of:

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