KR101361722B1 - Wave retardation film and 3d display device having the same - Google Patents

Abstract

The present invention includes a base substrate, a liquid crystal layer formed on the base substrate, a first region having a first line pattern formed in a first direction on one surface of the liquid crystal layer, and a second line formed in the first direction A phase delay film having a pattern and a second region having a third line pattern formed in a second direction crossing the first direction is alternately formed, and a stereoscopic image display device including the same.

Description

Phase delay film, and three-dimensional image display device including the same {WAVE RETARDATION FILM AND 3D DISPLAY DEVICE HAVING THE SAME}

The present invention relates to a phase retardation film for a stereoscopic image display device.

2. Description of the Related Art [0002] There has been active research on a stereoscopic image display device that converts a two-dimensional image formed on a display device into a three-dimensional image in accordance with recent technological advances. In general, three-dimensional stereoscopic images are generally produced using the principle of binocular disparity through two eyes of a human being.

Since the two eyes of the human being are separated by a certain distance, the images observed from different angles with each eye are input to the brain, which enables the observer to perceive the sense of space by recognizing the three-dimensional feeling.

Among the principles of the three-dimensional image, polarizing glasses are used to convert the polarized light of the image transmitted from the display device and to input the polarized light into the polarized glasses to realize a three-dimensional image.

There are various methods for changing the polarization of the image transmitted from the display device, but there is a method of using a phase retardation film in which optical axes are arranged differently at regular intervals.

Recently, a fine pattern (fine line) having a depth of about 50 to 250 nm is formed on an alignment layer by using a laser, and a method of forming a fine pattern And a liquid crystal is coated thereon.

However, such a laser system has to be formed at a constant interval of 50 to 250 nm at a predetermined interval using a femtosecond laser, so that it is difficult to control and it has not been commercialized yet.

It is also necessary to form the -45 DEG fine pattern P1 in the first region 11 of the alignment film and to form the +45 DEG fine pattern P2 in the second region 12. In the laser method, There is a problem that it is very difficult to control so that the -45 ° fine pattern P1 and the + 45 ° fine pattern P2 are not superimposed on the boundary region 13 between the first region 11 and the second region 12. As a result, a fine pattern is not properly formed in the boundary region 13, and there is a problem that alignment of the liquid crystal is not sufficient.

The present invention provides a phase delay film and a stereoscopic image display device including the same which minimize the phase delay variation while using an existing phase delay film manufacturing process as it is.

Retardation film according to an embodiment of the present invention, the base substrate; And a liquid crystal layer formed on the base substrate, wherein one surface of the liquid crystal layer has a first region having a first line pattern formed in a first direction, and a second line pattern formed in the first direction and the first direction The second region having the third line pattern formed in the second direction crossing the and is alternately formed.

In the phase delay film according to an embodiment of the present invention, the pattern depth of the third line pattern may be formed deeper than the pattern depth of the second line pattern.

In the phase delay film according to an embodiment of the present invention, the pattern depth of the third line pattern may be formed to 50 nm or less.

In the phase delay film according to an embodiment of the present invention, the pattern density of the third line pattern may be formed higher than the pattern density of the second line pattern.

In the phase delay film according to the exemplary embodiment of the present invention, the first line pattern, the second line pattern, and the third line pattern may be formed in an intaglio or an embossed form.

In the retardation film according to the exemplary embodiment of the present invention, the liquid crystal of the second region has a slow axis of 43 ° to 47 °.

Method of manufacturing a phase delay film according to an embodiment of the present invention, forming a liquid crystal layer by orienting the liquid crystal on a stamp formed with a predetermined pattern; Peeling the liquid crystal layer from the stamp and stacking the liquid crystal layer on a base substrate, wherein the forming of the liquid crystal layer comprises: a first region having a first line pattern formed on a surface of the liquid crystal layer in a first direction; and The second line pattern formed in the first direction and the second region in which the third line pattern intersecting the second line pattern are formed are alternately formed.

Method for manufacturing a phase delay film according to another embodiment of the present invention, preparing a stamp having a predetermined pattern; Forming a liquid crystal layer on the stamp; And peeling the liquid crystal layer from the stamp and stacking the liquid crystal layer on a base substrate. The preparing of the stamp includes: first rubbing the substrate in a first direction; Forming a mask on the first rubbed substrate at predetermined intervals; Planarizing an exposed portion of the substrate on which the mask is formed; A second rubbing of the exposed portion of the substrate on which the mask is formed in a second direction intersecting the first direction; And removing the mask.

According to the present invention, it is possible to use the existing retardation film manufacturing process as it is, manufacturing cost is reduced, it is possible to form the retardation film by a simple surface treatment to increase the productivity. Further, the phase delay deviation of the produced phase retardation film is minimized.

FIG. 1 is a schematic view showing a conventional optical patterning method using a femtosecond laser, and FIG.
2 is a schematic view illustrating a stereoscopic image display apparatus according to an exemplary embodiment of the present invention,
3 is a cross-sectional view of a phase retardation film and a line pattern of an optical pattern film according to an embodiment of the present invention,
4 is an enlarged view of a line pattern of an optical pattern film according to an embodiment of the present invention,
5 is a flowchart illustrating a method of manufacturing a phase retardation film according to an embodiment of the present invention,
6 is a flowchart showing another method of manufacturing a phase retardation film according to an embodiment of the present invention,
FIG. 7 is a flowchart showing a manufacturing procedure of the stamp used in FIG. 6,
Figure 8 is a perspective view of the stamp produced according to Figure 7,
9 is a cross-sectional view of a phase retardation film and a line pattern of an optical pattern film according to another embodiment of the present invention,
10 is a flowchart showing a method of manufacturing a phase retardation film according to another embodiment of the present invention,
11 is a perspective view of the stamp produced according to Fig.
12 is a view showing a cross section of a phase delay film according to another embodiment of the present invention,
13 is a flowchart showing a method of manufacturing a phase delay film according to another embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In the present invention, the terms "comprising" or "having ", and the like, specify that the presence of a feature, a number, a step, an operation, an element, a component, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.

FIG. 2 is a schematic view of a stereoscopic image display device according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of a phase retardation film and a line pattern of an optical pattern film according to an embodiment of the present invention. 4 is an enlarged view of a line pattern of an optical pattern film according to an embodiment of the present invention.

Referring to FIG. 2, the stereoscopic image display apparatus according to the embodiment of the present invention includes a backlight unit 100, a display panel 200, a phase retardation film 300, and polarizing glasses 400.

The stereoscopic image display apparatus can be implemented by various display apparatuses such as a liquid crystal display apparatus, a plasma display apparatus, and an organic light emitting display apparatus, and will be described herein as a liquid crystal display apparatus.

The liquid crystal display device includes a backlight unit 100 that largely serves as a light source and a display panel 200 that outputs light by controlling light provided from the backlight unit 100.

The backlight unit 100 may include a light source, a light guide plate, and a side-type backlight including a plurality of optical films. However, the backlight unit 100 may be a direct-type backlight.

The display panel 200 includes a main liquid crystal layer 230 between the TFT substrate 210 and the color filter substrate 220 and a first liquid crystal layer 230 on the outer surfaces of the TFT substrate 210 and the color filter substrate 220, (240) and the second polarizing plate (250) are disposed. At this time, the polarization axes of the first polarizer 240 and the second polarizer 250 are orthogonal to each other, and the light is controlled according to the arrangement direction of the liquid crystal.

The phase retardation film 300 is disposed on the second polarizing plate 250, and the first and second regions having different optical axes are alternately formed to convert the polarizing information of the light emitted from the display panel.

The light whose polarization information has been converted passes through the left eye lens 410 or the right eye lens 420 of the polarizing glasses 400 according to the polarization state thereof. With this configuration, an observer wearing polarized glasses can see different images from the left eye and the right eye, thereby feeling a three-dimensional feeling.

3, the phase retardation film 300 includes a base substrate 310, an optical pattern film 320 formed on the base substrate 310, and a liquid crystal layer 320 disposed on the optical pattern film 320. [ (330).

The base substrate 310 is a support, and various kinds of films can be applied. Specifically, polymethyl methacrylate (PMMA), polycarbonate (PC), or the like may be selected. In addition, glass or plastic having a predetermined thickness and strength may be selected.

The optical pattern film 320 is a polymer film or a UV resin and has a first area A on which a line pattern is formed in a first direction and a second area B on which a line pattern is formed in a second direction, .

Specifically, a plurality of first line patterns 321 having an angle of -45 degrees with respect to the longitudinal direction L1 are formed in the first area A, and longitudinal directions L1 and -45 degrees are formed in the second area B, A second line pattern 322 having an angle and a third line pattern 323 having an angle of + 45 DEG with respect to the longitudinal direction L1 are formed. The longitudinal direction L1 may be a direction in which the optical pattern film 320 extends. At this time, even if the angle between the line pattern and the longitudinal direction is not necessarily formed to be ± 45 °, the same effect can be achieved if the normal error range of the manufacturing process is satisfied.

The first line pattern 321 and the second line pattern 322 can be formed by rubbing the entire surface of the optical pattern film 320 at an angle of -45 °. Accordingly, the first line pattern 321 and the second line pattern 322 may be the same pattern, and the ends of the first line pattern 321 and the second line pattern 322 may be connected to each other.

The third line pattern 323 is formed in a direction intersecting with the first line pattern 321. Specifically, the third line pattern 323 is formed to intersect the first line pattern 321 substantially perpendicularly. The third line pattern 323 can be formed by masking the first area A of the optical pattern film 320 formed at an overall angle of -45 and then rubbing back to the second area B at + 45 °.

Generally, the optical pattern film has a difficulty in manufacturing because the pattern must be formed at + 45 ° and -45 ° in the first region A and the second region B, respectively, so that the liquid crystal layer has different optical axes, There is an advantage that pattern formation of the first region A and the second region B is easy. At this time, the first to third line patterns 321 to 323 may be formed with depressed grooves or embossed projections.

The liquid crystal layer 330 is oriented along the pattern line of the optical pattern film 320. The first alignment region 332 corresponding to the first region A of the optical pattern layer 320 is formed such that the slow axis of the liquid crystal is oriented in the direction of -45 degrees in the longitudinal direction L1, The second alignment region 331 corresponding to the second region B is formed in a direction in which the slow axis forms +45 degrees in the longitudinal direction L1.

Therefore, the liquid crystal layer 330 is configured such that the optical axes of the first and second alignment regions 332 and 331 are substantially perpendicular to each other, and the phase of light passing through the liquid crystal layer 330 has a half wavelength difference.

However, the second alignment area 331 is formed by the second line pattern 322 and the third line pattern 323, while the first alignment area 332 is relatively easily formed with an optical axis of about -45 degrees. There is a problem that the optical axis of the liquid crystal is not formed at +45 DEG.

Accordingly, in the present invention, the pattern depth and the pattern density of the second line pattern 322 and the third line pattern 323 are adjusted to orient the second alignment region 331 of the liquid crystal layer at substantially + 45 ° .

Table 1 below shows the pattern depths of the second line pattern 322 and the third line pattern 323 in the second area B and the optical axis of the second alignment area 331 of the liquid crystal layer according to the pattern density It is a table. Here, the pattern depth is defined as the depth of the groove when the line pattern is a groove, and defined as the height when the projection is a protrusion.

Item Second rubbing pattern Third rubbing pattern Liquid crystal layer optical axis
Liquid crystal alignment
Performance Pattern depth Pattern density Pattern depth Pattern density Comparative Example 1 15 (nm) 921 (ea / mm) 10 nm 1102 (ea / mm) 51.6 DEG NG Comparative Example 2 15 (nm) 921 (ea / mm) 18nm 848 (ea / mm) 49.3 DEG NG Comparative Example 3 15 (nm) 921 (ea / mm) 32nm 807 (ea / mm) 47.2 DEG NG Example 1 15 (nm) 921 (ea / mm) 26 nm 1048 (ea / mm) 46.8 DEG OK Example 2 15 (nm) 921 (ea / mm) 36nm 1125 (ea / mm) 45.9 DEG OK Example 3 15 (nm) 921 (ea / mm) 42 nm 1353 (ea / mm) 45.6 DEG OK Example 4 Not measurable Not measurable 10 nm 1102 (ea / mm) 45.3 DEG OK Example 5 Not measurable Not measurable 20 nm 848 (ea / mm) 44.8 DEG OK

Referring to Table 1, the second line pattern 322 of the second area B is fixed at a pattern depth of 15 nm and a pattern density of 921 ea / mm, and the pattern depth of the third line pattern 323 and the pattern The liquid crystal alignment performance was evaluated while changing the density.

Here, the pattern density is defined as the number of patterns (ea) per unit length (mm), and the number of patterns per unit length at a plurality of points is measured by SEM and converted into an average value thereof. The pattern depth of the third line pattern 323 was adjusted by varying the degree of adhesion between the rubbing roll and the optical pattern film, and the pattern density was adjusted by varying the rubbing frequency.

The inability (NG) in the liquid crystal alignment performance is defined as a case in which the slow axis of the second alignment area 331 deviates from 45 ° ± 2. When the optical axis of the second alignment area 331 is out of 45 占 2, there is a problem that the image quality of the stereoscopic image is deteriorated.

When the depth of the third line pattern 323 is smaller than the depth of the second line pattern 322, the optical axis of the second alignment area 331 is formed at 51.6 degrees, Even if the pattern depth of the third line pattern 323 is formed deeper than that of the second line pattern 322 as in the second comparative example 2, the optical axis of the second alignment area 331 may be 45 5 °.

The pattern density of the third line pattern 323 is smaller than the pattern density of the second line pattern 322 and the pattern density of the third line pattern 323 is smaller than that of the second line pattern 322. [ It can be seen that the optical axis of the second alignment area 331 is not formed at a desired angle. Further, even when the depth of the third line pattern 323 is twice as deep as the depth of the second line pattern 322 as in the third comparative example, if the pattern density is small, the optical axis of the second alignment area 331 is 45 ≪ / RTI >

On the other hand, as in the first to third embodiments, the pattern depth of the third line pattern 323 is deeper than the pattern depth of the second line pattern 322 and the pattern density of the third line pattern 323 is greater than the pattern depth of the second line pattern 322 322, the optical axis of the second alignment region 331 is formed within 45 +/- 2 degrees.

In particular, in the third embodiment, considering that the optical axis of the second alignment region 331 is almost similar to the intended 45 ° as 45.9 °, the pattern depth and the pattern density of the third line pattern 323 are determined as the second line. It can be seen that as the pattern 322 is larger, the optical axis of the second alignment region 331 is closer to 45 °.

Therefore, as shown in FIG. 4, it is preferable that the second line pattern 322 has a shallow pattern depth and a small pattern density, while the third line pattern 323 has a relatively large pattern depth and a large pattern density.

At this time, when the pattern depth of the first line pattern 321 is less than 10 nm, the liquid crystal can not be sufficiently aligned in the first region A, so that the pattern depth should be at least 10 nm or more. As described above, the second line pattern 322 may be formed to have the same pattern depth as the first line pattern 321.

On the other hand, when the pattern depth of the third line pattern 323 is more than 50 nm, there is a problem that the line pattern is observed from the outside or the haze value is increased and the optical characteristic is deteriorated.

Therefore, it is preferable that the first line pattern 321 and the second line pattern 322 have a pattern depth of 10 nm or more and the third line pattern 323 has a pattern depth of 50 nm or less. .

In Examples 4 and 5 of Table 1, the liquid crystal alignment performance was measured for the case where the third line pattern 323 was formed after the second line pattern 322 was removed by the surface treatment. Excellent liquid crystal alignment performance was measured even when the pattern depth and the pattern density of the liquid crystal layer 323 were smaller than those of Examples 1 to 3.

According to the present invention, in order for the second line pattern 322 to be planarized by the surface treatment, it is preferable that the pattern depth is about 30 nm or less. Therefore, the pattern depth of the second line pattern 322 is preferably 10 to 30 nm. In this embodiment, the surface treatment is performed using plasma, but various other surface treatment methods may be applied.

Referring to FIG. 5, a method of manufacturing a phase retardation film of the present invention includes the steps of: forming an optical pattern film 320 on a base substrate 310; (B) of forming the mask 412 at a predetermined interval in the first rubbed optical pattern film 310 and a step (b) of forming the mask 412 in the first rubbing step (C) of rubbing the formed optical pattern film 320 in a second direction that intersects the first direction, removing the mask 412, and removing the mask 412 And aligning the liquid crystal on the optical patterned film 320 to form the liquid crystal layer 330.

First, in the step of forming the optical pattern film 320, a resin having a predetermined thickness is applied to the base substrate 310 to form an optical pattern film 320. In this case, when a polymer film is used as the optical pattern film 320, a base substrate may be unnecessary.

Thereafter, the first rubbing step (FIG. 5A) rubs the optical pattern film 320 at -45 DEG. At this time, the depth of the line pattern can be adjusted by adjusting the distance between the rubbing roll 400 and the optical pattern film 320. Specifically, the depth of the line pattern is formed to a minimum depth (about 10 nm) at which the liquid crystal can be oriented.

In the step of forming the mask 412 (FIG. 5B), the mask 412 is formed on the optical pattern film 320 at predetermined intervals. The mask material may be water or a printing ink which can be easily removed from the solvent, and is masked to a thickness at which a line pattern is not formed in the optical pattern film 320 by a rubbing process to be performed thereafter.

The mask 412 is formed by rotationally moving the rotary roll 410 having the protruding portions 411 at predetermined intervals in one direction. At this time, the protrusion 411 is coated with printing ink, and the mask 412 is formed at a predetermined interval when the rotary roll 410 is rotated. At this time, the predetermined interval is equal to the width of the first area A and the second area B of the optical pattern film 320, and the mask 412 is formed at a portion corresponding to the first area A.

The second rubbing step (c in Fig. 5) in the second direction rubs the optical pattern film 320 on which the mask 412 is formed at + 45 degrees. Rubbing is performed by adhering the rubbing roll 420 to the optical pattern film 320 during rubbing so that the pattern depth of the third line pattern 323 formed in the second area B is greater, 323 may be repeated a plurality of times so as to increase the pattern density. Thereafter, removing the mask removes the mask 412 with water or solvent.

Referring to FIG. 5D, the optical pattern 320 includes a first line pattern 321 in a first area A, a second line pattern 322 in a second area B, A third line pattern 323 is formed. Then, a liquid crystal is applied to the optical pattern film 320 to form a liquid crystal layer 330.

Further, according to the present invention, further performing the step of planarizing the optical pattern film 320 between the step of forming the mask (b in Fig. 5) and the second rubbing in the second direction (c in Fig. 5) .

This planarization step may be performed by surface-treating the optical pattern film 320 using PVD or the like. As described above, since the first rubbing is relatively shallow and the depth of the pattern is about 10 to 30 nm, it is possible to planarize easily by the surface treatment process.

When the planarization step is further performed, since only the third line pattern 323 is formed in the second region B of the optical pattern film 320, the liquid crystal is more easily oriented.

FIG. 6 is a flow chart showing another method of manufacturing a phase retardation film according to an embodiment of the present invention, FIG. 7 is a flowchart showing a manufacturing procedure of a stamp used in FIG. 6, and FIG. It is a perspective view of a stamp.

Another method of manufacturing a phase retardation film according to the present invention includes the steps of forming an optical pattern film 320 on a base substrate 310 and pressing the stamp 500 on the optical pattern film 320, Forming a pattern on the optical pattern film 320; separating the optical pattern film 320 from the stamp 500; and aligning the liquid crystal on the optical pattern film 320 to form a liquid crystal layer 330 ). ≪ / RTI >

6A) of forming the optical pattern film 320 on the base substrate 310 is a step of forming the optical pattern film 320 on the base substrate 310 such as PMMA, PET, or PC to a predetermined thickness . At this time, the optical pattern film 320 can be formed by applying UV resin.

In the step of forming a pattern in the optical pattern film 320 (FIG. 6B), the optical pattern film 320 is pressed by the stamp 500 to form a line pattern. Specifically, a first line pattern 321 is formed in the first area A of the optical pattern film 320 and a second line pattern 322 and a third line pattern 323 are formed in the second area B . The pattern depth of the third line pattern 323 is formed to be deeper than the pattern depth of the second line pattern 322 and the pattern density of the third line pattern 323 is formed to be greater than the pattern depth of the second line pattern 322 Density.

Referring to FIG. 7, the stamp 500 rubs one side of the substrate at -45 DEG (FIG. 7A), forms a mask 412 at a predetermined interval on the first rubbed substrate 500 7B). After the substrate 500 on which the mask 412 is formed is rubbed second (+ c) (Fig. 7C), the mask 412 is removed to form a pattern .

8, the stamp 500 includes a first pattern area 510 and a second pattern area 520 corresponding to the first area A and the second area B of the optical pattern film 320, Are alternately formed. A pattern 511 corresponding to the first line pattern 321 of the optical pattern film described above is formed in the first pattern region 510 and a second line pattern 322 and a third line pattern Patterns 521 and 522 corresponding to the pattern 323 are formed.

The patterns 511, 521, and 522 formed on the stamp 500 may be formed in a negative or positive pattern. Therefore, when the patterns 511, 521, and 522 formed on the stamp are engraved, the line pattern of the optical pattern film may be formed with an embossed shape.

Referring back to FIG. 6, the step of separating the optical pattern film 320 from the stamp 500 may irradiate ultraviolet rays to cure the UV resin (c in FIG. 6) and stamp the optical pattern film 320. It peels from 500 and the optical pattern film 320 in which the pattern was formed is manufactured. (D of FIG. 6).

The step of forming the liquid crystal layer (Fig. 6E) applies the liquid crystal onto the optical pattern film 320. [ The applied liquid crystal is oriented along the fine pattern formed in the first region A and the second region B of the optical pattern film 320. [

Since the third line pattern 323 is formed in the second region B of the optical pattern film 320 so that the pattern depth is deep and the pattern density is higher than that of the second line pattern 322, The first alignment region 332 of the liquid crystal layer 330 corresponding to the first region A of the optical pattern film 320 is aligned in the second region B of the optical pattern film 320 with the optical axis of the liquid crystal aligned at about- The corresponding second alignment area 331 is oriented with the optical axis of the liquid crystal at about + 45 °.

According to the embodiment of the present invention, since the line pattern of the optical pattern film 320 is formed by pressing with the stamp 500, the working speed is remarkably improved and the constant pattern can be always formed.

FIG. 9 is a cross-sectional view of a phase delay film and a line pattern of an optical pattern film according to another embodiment of the present invention, FIG. 10 is a flowchart illustrating a method of manufacturing a phase retardation film according to another embodiment of the present invention, 11 is a perspective view of the stamp produced according to Fig.

The phase retardation film 300 according to another embodiment according to FIG. 9 includes a base substrate 310, an optical pattern film 320 formed on the base substrate 310, And a liquid crystal layer 330 disposed on the liquid crystal layer 330.

The first region A and the second region B are alternately formed in the optical pattern film 320. The first region A is formed with the first line pattern 321 in the first direction, The third line pattern 323 is formed in the second direction. In the present invention, the second line pattern 322 rubbed in the first direction is not formed in the second region B. Therefore, there is an advantage that alignment of the liquid crystal becomes easier.

A manufacturing method of a phase retardation film according to another embodiment of the present invention is the same as the manufacturing method of Fig. 6 described above. However, the patterns of the stamps used are different. Here, the shape of the stamp will be described in detail.

Referring to FIG. 10, a stamp manufacturing method according to an exemplary embodiment of the present invention includes a first rubbing step (a) of one side in a first direction on the substrate 500 (FIG. 10 a) (B) of forming the mask 412 at predetermined intervals in the mask 412 (FIG. 10) and the step (c) of processing the substrate 500 on which the mask 412 is formed (Fig. 10d) of rubbing the formed substrate 500 in a second direction intersecting the first direction, and removing the mask (Fig. 10e).

The surface-treating step (c in Fig. 10) may be performed by PVD or the like. As described above, since the first rubbing is relatively shallow at a depth of about 10 nm, the first rubbing formed in the unmasked region 520 is easily planarized by the surface treatment process.

11, a pattern 511 corresponding to the first line pattern 321 of the optical pattern film 320 is formed in the first pattern area 510 of the stamp 500 manufactured as described above, In the region 510, a pattern 522 corresponding to the third line pattern 323 of the optical pattern film 320 is formed. That is, since the pattern corresponding to the second line pattern formed in the second pattern area 520 is removed by the surface treatment, the second pattern area 520 corresponds to the third line pattern 323 of the optical pattern film 320 Only the pattern 522 is formed.

12 is a view showing a cross section of a phase delay film according to another embodiment of the present invention, Figure 13 is a flow chart showing a method of manufacturing a phase delay film according to another embodiment of the present invention.

Referring to FIG. 12, the phase delay film according to another embodiment of the present invention includes a base substrate 310 and a liquid crystal layer 330 stacked on the base substrate 310. The adhesive layer 340 interposed between the liquid crystal layer 330 and the base substrate 310 may absorb moisture and maintain the optical reliability even when the coefficients of linear expansion of the liquid crystal layer 330 and the base substrate 310 are changed in a high temperature / high humidity environment. The coefficient of linear expansion can be adjusted.

According to the present invention, a line pattern is directly formed on one surface of the liquid crystal layer 330 to align the liquid crystal. In detail, one surface of the liquid crystal layer 330 has a first region 331 having a first line pattern rubbing in a first direction, and a second line crossing the first line direction rubbing in the first direction and the first direction crossing the first direction. Second regions 332 having third line patterns rubbed in two directions are alternately formed.

The first to third line patterns 321, 322, and 323 described here are the same as the first to third line patterns 321, 322, and 323 of the optical pattern layer 320, and thus, further description thereof will be omitted. Here, the liquid crystal layer 330 is omitted. A method of forming the first to third line patterns 321, 322, and 323 directly on one surface of the substrate will be described in detail.

Referring to FIG. 13, a method of manufacturing a phase delay film according to another embodiment of the present invention includes forming a liquid crystal layer on a stamp on which a predetermined pattern is formed, and peeling the liquid crystal layer from the stamp to form a base substrate. Laminating to.

In the forming of the liquid crystal layer, the liquid crystal is applied onto the stamp 500 to form a liquid crystal layer having a predetermined thickness (a in FIG. 13). In the liquid crystal, an optical axis is formed at a predetermined angle according to the pattern of the stamp 500 (b in FIG. 13). In this process, a line pattern corresponding to the pattern of the stamp 500 is formed on the lower surface of the liquid crystal layer 330.

The pattern of the specific stamp 500 is the same as FIG. That is, in the stamp 500, the first pattern region 510 and the second pattern region 520 are alternately formed, and the first pattern region 510 corresponds to the first line pattern 321 of the optical pattern film described above. The pattern 511 is formed, and patterns 521 and 522 corresponding to the second line pattern 322 and the third line pattern 323 are formed in the second pattern region 520. Accordingly, first to third line patterns 321, 322, and 323 are formed on the bottom surface of the liquid crystal layer 330 coated thereon.

By adjusting the depth and density of the first to third line patterns 321, 322, and 323, the first alignment region 332 of the liquid crystal layer 330 has an optical axis of −45 °, and the second alignment region 331 has an optical axis Is formed at + 45 °.

However, the pattern of the stamp 500 is not necessarily limited thereto, and the second line pattern 322 may be removed as shown in FIG. 11. Therefore, when using the stamp of FIG. 11, a first line pattern 321 is formed in the first alignment region 332 of the liquid crystal layer 330, and a third line pattern 323 is formed in the second alignment region 331. Only bays may be formed.

Thereafter, the liquid crystal layer 330 is cured and peeled off (FIG. 13C), and then attached to a separate base substrate 310 to produce a phase delay film (d in FIG. 13). Such a phase delay film does not have an optical pattern film and thus has an advantage of improving optical characteristics.

In addition, when adjusting the hygroscopicity and the coefficient of linear expansion of the optical adhesive interposed between the liquid crystal layer 330 and the base substrate 310, there is an advantage that the durability (reliability) to the poor external environment is more excellent. That is, the adhesive layer 340 having the hygroscopicity and the coefficient of linear expansion may cover the mismatching coefficient of linear expansion coefficient between the base substrate 310 and the liquid crystal layer 330 to increase optical characteristics and durability. Here, the hygroscopicity is defined to the extent that the material absorbs moisture, and the coefficient of linear expansion may be defined as the length change depending on the temperature of the material.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

100: backlight 200: display panel
300: phase retardation film 310: base substrate
320: optical pattern film 321: first line pattern
322: second line pattern 323: third line pattern
330: liquid crystal layer 331: first alignment area
332: second orientation area 500: stamp

Claims (15)

A base substrate; And
It includes a liquid crystal layer laminated on the base substrate,
A first region having a first line pattern formed in a first direction and a third line pattern formed in a second direction crossing the first direction and a second line pattern formed in the first direction are formed on one surface of the liquid crystal layer. A phase delay film having alternately formed second regions. The phase delay film of claim 1, wherein the pattern depth of the third line pattern is deeper than the pattern depth of the second line pattern. The phase delay film of claim 1, wherein the pattern depth of the third line pattern is 50 nm or less. The phase delay film of claim 3, wherein the pattern density of the third line pattern is higher than the pattern density of the second line pattern. The phase delay film of claim 1, wherein the liquid crystal of the second region has a slow axis within 45 ° ± 2. The phase delay film of claim 1, wherein an adhesive layer is interposed between the base substrate and the liquid crystal layer. Forming a liquid crystal layer on a stamp on which a predetermined pattern is formed; And
And peeling the liquid crystal layer from the stamp and laminating it on a base substrate.
The forming of the liquid crystal layer may include: a first region having a first line pattern formed on a surface of the liquid crystal layer in a first direction, and a second line crossing the second line pattern formed in the first direction and the second line pattern; A method of manufacturing a phase delay film for alternately forming a second region in which three line patterns are formed. The method of claim 7, wherein the stamp has a pattern corresponding to the first line pattern to the third line pattern on one surface thereof. The method of claim 7, wherein the pattern depth of the third line pattern is deeper than the pattern depth of the second line pattern. The method of claim 7, wherein the pattern depth of the third line pattern is 50 nm or less. The method of claim 9, wherein the pattern density of the third line pattern is higher than the pattern density of the second line pattern. Preparing a stamp having a predetermined pattern formed thereon;
Forming a liquid crystal layer on the stamp; And
And peeling the liquid crystal layer from the stamp and laminating it on a base substrate.
Preparing the stamp,
First rubbing one surface of the substrate in a first direction;
Forming a mask at predetermined intervals on the substrate on which the first rubbing is formed;
Planarizing an exposed portion of the substrate on which the mask is formed;
Second rubbing the exposed portion of the substrate on which the mask is formed in a second direction crossing the first direction; And
Removing the mask; Phase delay film manufacturing method comprising a. delete delete A stereoscopic image display device comprising the phase delay film according to any one of claims 1 to 5.

Images