KR101351311B1 - Photosensitive resin composition - Google Patents

Abstract

The present invention relates to a photosensitive resin composition, in particular a) polyhydroxy styrene resin; b) 1,2-quinonediazide compounds; c) photoacid generator; d) melamine crosslinkers; And e) a photosensitive resin composition comprising a solvent.

The photosensitive resin composition according to the present invention is excellent in various performances such as sensitivity and insulation, and in particular, excellent heat resistance can increase reliability and lifespan in a post-process, and also insulator and separator as a single photosensitive resin composition. Branch patterns can be formed at the same time to reduce the process time. Moreover, the photosensitive resin composition of this invention improves the aperture ratio on a panel remarkably, and is suitable for apply to the manufacturing process of PM-OLED, AM-OLED, AM-LCD, and a PDP board | substrate.

Photosensitive resin, polyhydroxy styrene resin, melamine crosslinking agent, opening ratio, PM-OLED

Description

Photosensitive Resin Composition {PHOTOSENSITIVE RESIN COMPOSITION}

FIG. 1 schematically shows a method for measuring positive sensitivity when forming an insulator and a separator in a step process of Examples and Comparative Examples of the present invention.

FIG. 2 schematically shows a method for measuring negative sensitivity when forming an insulator and a separator in a step process of Examples and Comparative Examples of the present invention.

Figure 3 schematically shows a method for measuring the front exposure sensitivity when the insulator and separator are formed in a step and a comparative example of the present invention,

4 is a final cross-sectional view of the positive pattern and negative pattern formed insulator and separator in one step of the embodiment and the comparative example of the present invention.

The present invention relates to a photosensitive resin composition, and more particularly, the photosensitive resin composition is excellent in various performances such as sensitivity and insulation, and in particular, it is possible to increase reliability and lifespan in a later process with excellent heat resistance, The photosensitive resin composition can simultaneously form two types of insulator and separator patterns, which can shorten the process time and at the same time significantly improve the aperture ratio on the panel, thereby improving PM-OLED, AM-OLED, and AM-LCD. The present invention relates to a photosensitive resin composition suitable for application to a manufacturing process of a PDP substrate.

In the case of the PM-OLED manufacturing process, a high resolution is required to increase the panel size, and more line electrodes are required for this purpose, but a decrease in aperture ratio is a problem. Therefore, there is a need for a material solution to improve this.

In addition, other display manufacturing processes such as AM-OLED, AM-LCD, and PDP substrates can shorten the process time and continue to develop photoresist and process for excellent aperture ratio.

Conventionally, the insulator used in the PM-OLED manufacturing process is composed of components such as PAC, binder, and solvent. Acrylic binders have been mainly used as the binder, and separators are components such as PAG, novolac resin, crosslinking agent, and solvent. Negative photoresist has been used.

However, when the two insulators and separators were formed in the related art, the two materials had to be processed in a two-step process, and thus a long process time became a problem. In addition, there is a problem that can cause a decrease in the aperture ratio by securing the alignment margin when the separator is aligned on the insulator.

As a result, studies have been recently conducted to increase the opening ratio by simultaneously forming an insulator and a separator, and a photoresist using a novolak resin has been developed, but in this case, there is a problem that the heat resistance is lowered. As such, when the heat resistance of the material is lowered, there is a difficulty in applying a high temperature process during the OLED manufacturing process, which may cause problems in securing reliability and lifespan in a later process.

Therefore, it is possible to shorten the process time in the insulator and separator forming process applied to the PM-OLED manufacturing process, and further studies are required to secure excellent aperture ratio, reliability and lifespan in a later process.

In order to solve the problems of the prior art as described above, the present invention is excellent in a number of performance, such as sensitivity, insulation, in particular, the photosensitive resin composition, the photosensitive resin composition which can increase the reliability and lifespan in a later process with excellent heat resistance It is an object of the present invention to provide a display comprising a cured product of and a pattern formation method of a display using the photosensitive resin composition.

Another object of the present invention is to form two types of patterns of insulator and separator at the same time with one photosensitive resin composition, which not only shortens the process time but also significantly improves the aperture ratio on the panel. It provides a photosensitive resin composition suitable for application to a manufacturing process of an OLED, AM-OLED, AM-LCD, PDP substrate, a display comprising a cured product of the photosensitive resin composition, and a pattern forming method of a display using the photosensitive resin composition. .

In order to achieve the above object, the present invention provides a photosensitive resin composition,

a) polyhydroxy styrene resin represented by the following formula (1);

b) 1,2-quinonediazide compounds;

c) photoacid generator;

d) a melamine crosslinking agent represented by Formula 2 below; And

e) solvent

It provides a photosensitive resin composition comprising a.

[Formula 1]

In the formula (1)

a and b show a molar ratio between each monomer, a is 1-10, b is 0-9, and a + b = 10.

(2)

In the formula (2)

R ₁ to R ₃ are each independently an alkyl group having 1 to 4 carbon atoms,

R ₄ to R ₆ are each independently a hydrogen group or an alkyl group having 1 to 4 carbon atoms.

Preferably, the present invention

a) 100 parts by weight of a polyhydroxy styrene resin represented by Formula 1;

b) 5 to 50 parts by weight of 1,2-quinonediazide compound;

c) 1 to 20 parts by weight of photoacid generator;

d) 1 to 30 parts by weight of the melamine crosslinking agent represented by Formula 2; And

e) The solvent is included so that the total solid content in the photosensitive resin composition is 10 to 50% by weight.

The present invention also provides a display device comprising a cured product of the photosensitive resin composition.

In another aspect, the present invention provides a pattern forming method of a display device using the photosensitive resin composition.
Hereinafter, the present invention will be described in detail.

delete

The photosensitive resin composition of the present invention is a) polyhydroxy styrene resin represented by the formula (1); b) 1,2-quinonediazide compounds; c) photoacid generator; d) a melamine crosslinking agent represented by Formula 2; And e) a solvent.

The polyhydroxy styrene-based resin represented by Formula 1 of the a) used in the present invention is in the case of a negative type (negative type) to form a crosslink in the presence of a crosslinking insoluble in the alkaline developer, before crosslinking It becomes soluble in alkaline developing solution so that a pattern can be formed. In addition, the positive type is insoluble in the alkaline developer depending on the presence of the 1,2-quinonediazide compound, and becomes soluble in the alkaline developer after exposure to form a pattern.

The polyhydroxy styrene resin represented by the formula (1) is preferably prepared by radical polymerization, in addition to the copolymer production by conventional methods such as anionic polymerization is also possible.

Specifically, the preparation of the polyhydroxy styrene resin represented by the formula (1) by the radical polymerization method is radical polymerization of acetoxy styrene and styrene in the presence of a solvent and a polymerization initiator, precipitation and filtration, vacuum drying (vacuum drying) After removing the unreacted monomer through the process, it is dissolved in methanol to form a resin solution, hydrolyzed in the presence of ammonia water and acetic acid, precipitated and filtered again, and the final polyhydroxy styrene resin can be prepared by vacuum drying process. have.

The polyhydroxy styrene resin represented by Formula 1 preferably has a polystyrene reduced weight average molecular weight (Mw) of 3,000 to 30,000, more preferably 5,000 to 20,000. When the polystyrene reduced weight average molecular weight is less than 3,000, there is a problem that the residual film ratio in the positive type is lowered, and the photospeed is lowered in the negative type, and when it exceeds 30,000, the photospeed is lowered in the positive type. There is a problem that can cause a scum in the negative type.

The 1,2-quinonediazide compound of b) used in the present invention is used as a photosensitive compound in the photosensitive resin composition.

As the 1,2-quinonediazide compound, 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, or 1,2-quinonediazide 6-sulfonic acid ester may be used. have.

The quinonediazide compound as described above may be prepared by reacting a naphthoquinonediazide sulfonic acid halogen compound and a phenol compound under a weak base.

Examples of the phenolic compounds include 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, 2,2'-tetrahydroxybenzophenone, and 4,4'-tetrahydroxybenzophenone. , 2,3,4,3'-tetrahydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,3,4,2'-tetrahydroxy 4'-methylbenzophenone, 2,3,4,4'-tetrahydroxy 3'-methoxybenzophenone, 2,3,4,2'-penta hydroxybenzophenone, 2,3,4,6'-pentahydroxybenzophenone, 2,4,6,3'-hexahydroxybenzophenone, 2,4,6,4'-hexahydroxybenzophenone, 2,4,6,5'-hexahydroxybenzophenone, 3,4,5 , 3'-hexahydroxybenzophenone, 3,4,5,4'-hexahydroxybenzophenone, 3,4,5,5'-hexahydroxybenzophenone, bis (2,4-dihydroxyphenyl ) Methane, bis (p-hydroxyphenyl) methane, tri (p-hydroxyphenyl) methane, 1,1,1-tri (p-hydroxyphenyl) ethane, bis (2,3,4-trihydroxy Phenyl) methane, 2,2-bis (2,3,4-trihydroxyphenyl) propane, 1,1,3-tris (2,5-di Methyl 4-hydroxyphenyl) -3-phenylpropane, 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol, or bis ( 2,5-dimethyl 4-hydroxyphenyl) -2-hydroxyphenylmethane etc. can be used, The said compound can be used individually or in mixture of 2 or more types.

When synthesizing a quinone diazide compound with the phenolic compound and the naphthoquinone diazidesulfonic acid halogen compound as described above, the degree of esterification is preferably 50 to 90%. When the degree of esterification is less than 50%, the residual film ratio may be deteriorated, and when the esterification degree is greater than 90%, there is a problem in that scum is generated on the pattern.

The 1,2-quinonediazide compound is preferably included in an amount of 5 to 50 parts by weight, and more preferably 10 to 40 parts by weight, based on 100 parts by weight of the polyhydroxy styrene resin of a). When the amount is less than 5 parts by weight, the difference in solubility between the exposed part and the non-exposed part becomes small, and pattern formation is difficult. When the amount is more than 50 parts by weight, unreacted 1,2-quinonediazide compound The solubility in an alkali aqueous solution which is a developing solution is excessively low, and the development is difficult.

The photoacid generator of c) used in the present invention forms and diffuses an acid through exposure or post-exposure bake, thereby causing a crosslinking reaction between the polyhydroxy styrene resin of a) and the melamine-based crosslinking agent of d) to form a pattern. To act.

The photoacid generator may be any compound that can generate an acid by light, of course, preferably an ionic photoacid generator such as sulfonium salt, iodonium salt, sulfonydiazomethane, N-sulfonyl Oxyimide type, benzoin sulfonate type, nitrobenzyl sulfonate type, sulfone type, glyoxime type, triazine type, etc. can be used.

Specifically, the sulfonium salt is a salt of a sulfonium cation and a sulfonate (sulfoic acid anion), and the sulfonium cation includes triphenolsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, and bis (4 -tert-butoxyphenyl) phenylsulfonium, 4-methylphenyldiphenylsulfonium, tris (4-methylphenylsulfonium), 4-tert-butylphenyldiphenylsulfonium, tris (4-tert-butylphenyl) sulfonium , Tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxy Phenyl) sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4-ditert-butoxyphenyl) phenylsulfonium, tris (3,4-ditert-butoxy Phenyl) sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert-butoxycarbonylmethyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxyphenyl ) Sulfonium, (4-tert-butoxyphenyl) bis (4-dimethylaminophenyl) sulfonium, tri (4-dimethylaminophenyl) sulfonium, 2-naphthyldiphenylsulfonium, dimethyl-2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, diphenyl Methylsulfonium, methyl-2oxopropylphenylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, or tribenzylsulfonium. The sulfonate is trifluoromethanesulfonate. , Nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pendafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluoro Robenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate.

The iodonium salt is a salt of an iodonium cation and a sulfonate (sulfoic acid anion), and the iodonium cation is diphenyl iodonium, bis (4-tert-butylphenyl) iodonium, and 4-tert-butoxyphenylphenyl. Iodonium, or 4-methoxyphenylphenyl iodonium, and the like. The sulfonate is trifluoromethanesulfonate, nonafluorobutasulfonate, heptadecafluorooctanesulfonate, 2,2,2- Trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate Nate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate.

Examples of the sulfonyl diazomethane-based photoacid generators include bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropofylsulfonyl) diazomethane and bis (1). , 1-dimethylethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (perfluroloisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4 -Methylphenylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcar Bonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, or tert-butoxycarbonyl Bissulfonyl diazomethane and sulfonylcarbonyl diazomethane, such as 4-methylphenyl sulfonyl diazomethane.

Examples of the N-sulfonyloxyimide-based photoacid generator include succinic acid imide, naphthalenedicarboxylic acid imide, phthalic acid imide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3-dicarboxyl Imide skeletons such as acid imides or 7-oxabicyclo [2,2,1] -5-heptene-2,3-dicarboxylic acid imides, trifluoromethanesulfonate, and nonafluorobutanesulfo Nate, Heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluene Sulfonates, benzenesulfonates, naphthalenesulfonates, camphorsulfonates, octanesulfonates, dodecylbenzenesulfonates. Butanesulfonate, or a compound of a combination such as methanesulfonate.

Examples of the benzoin sulfonate-based photoacid generator include benzointosylate, benzoin mesylate, or benzoin butanesulfonate.

The nitrobenzylsulfonate-based photoacid generator includes 2,4-dinitrobenzylsulfonate, 2-nitrobenzylsulfonate, or 2,6-dinitrobenzylsulfonate, and the like. Sulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4- Fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate. Moreover, the compound which substituted the nitro group of the benzyl side by the trifluoromethyl group can also be used.

The sulfone-based photoacid generators include bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2,2 -Bis (4-methylphenylsulfonyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiononeone, 2- (cyclohexylcarbonyl) -2- (p-toluenesulfonyl) propane or 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one and the like.

Examples of the glyoxime-based photoacid generators include bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime and bis-o- (p -Toluenesulfonyl) -α-disotlohexylglyoxime, bis-o- (p-toluenesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (p-toluenesulfonyl) -2- Methyl-3,4-pentanedioneglyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o -(n-butanesulfonyl) -α-dicyclohexylglyoxime, bis-o- (n-butanesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (n-butanesulfonyl)- 2-methyl-3,4-pentanedioneglyoxime, bis-o- (methanesulfonyl) -α-dimethylglyoxime, bis-o- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis- o- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-o- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-o- (perfluorooctane Sulfonyl) -α-dimethylglyoxime, bis-o- ( Clohexylsulfonyl) -α-dimethylglyoxime, bis-o- (benzenesulfonyl) -α-dimethylglyoxime, bis-o- (p-fluorobenzenesulfonyl) -α-dimethylglyoxime, bis- o- (p-tert-butylbenzenesulfonyl) -α-dimethylglyoxime, bis-o- (xylenesulfonyl) -α-dimethylglyoxime, or bis-o- (cambosulfonyl) -α-dimethylglycol Dioxin and the like.

The triazine-based photoacid generator includes PDM-Triazine, WS-Triazine, PDM-Triazine, Dimethoxy-Triazine, MP-Triazine, TFE-Triazine, or TME-Triazine (Sam Chemical).

The photoacid generator as described above is preferably included in an amount of 1 to 20 parts by weight, more preferably 1 to 10 parts by weight based on 100 parts by weight of the polyhydroxy styrene resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed is reduced, and if it exceeds 20 parts by weight, outgassing and storage stability may be reduced.

The melamine crosslinking agent represented by Chemical Formula 2 of d) used in the present invention forms a crosslinked structure with the polyhydroxy styrene resin of a).

The melamine crosslinking agent is preferably included in an amount of 1 to 30 parts by weight, more preferably 1 to 20 parts by weight, based on 100 parts by weight of the polyhydroxy styrene resin of a). If the content is less than 1 part by weight, there is a problem that the photospeed in the negative type is lowered, and if it exceeds 30 parts by weight, there is a problem that the storage stability may be lowered.

The solvent of e) used in the present invention functions to form a uniform pattern profile by preventing flatness and coating stains of the insulator and the separator.

The solvent may be alcohol such as methanol, ethanol, benzyl alcohol, hexyl alcohol; Ethylene glycol alkyl ether acetates such as ethylene glycol methyl ether acetate and ethylene glycol ethyl ether acetate; Ethylene glycol alkyl ether propionates such as ethylene glycol methyl ether propionate and ethylene glycol ethyl ether propionate; Ethylene glycol monoalkyl ethers such as ethylene glycol methyl ether and ethylene glycol ethyl ether; Diethylene glycol alkyl ethers such as diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether; Propylene glycol alkyl ether acetates such as propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate and propylene glycol propyl ether acetate; Propylene glycol alkyl ether propionates such as propylene glycol methyl ether propionate, propylene glycol ethyl ether propionate and propylene glycol propyl ether propionate; Propylene glycol monoalkyl ethers such as propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether and propylene glycol butyl ether; Dipropylene glycol alkyl ethers such as dipropylene glycol dimethyl ether and diporoethylene glycol diethyl ether; Butylene glycol monomethyl ether, such as butylene glycol monomethyl ether and butylene glycol monoethyl ether; Or dibutylene glycol alkyl ethers such as dibutylene glycol dimethyl ether and dibutylene glycol diethyl ether.

The solvent is preferably included so that the solid content of the entire photosensitive resin composition is 10 to 50% by weight, more preferably 10 to 40% by weight. If the solid content of the total composition is less than 10% by weight, there is a problem that the coating thickness is thin, and coating flatness is lowered. If the content exceeds 50% by weight, the coating thickness becomes thick, and the coating equipment is impaired when coating. There is a problem that can be.

The photosensitive resin composition of this invention which consists of the above components can further contain f) surfactant as needed.

The surfactant has the function of improving the applicability and developability of the photosensitive composition.

The surfactant may be polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, F171, F172, F173 (trade name: Japan Nippon Ink Company), FC430, FC431 (trade name: Sumitomo Triem, Inc.), or KP341 (trade name: Shinwol) Chemical industry) and the like.

The surfactant is preferably included in an amount of 0.0001 to 2 parts by weight based on 100 parts by weight of the polyhydroxy styrene resin of a). If the content is within the above range, the surfactant is further improved in coating properties and developability of the photosensitive composition. good.

It is preferable to use the photosensitive resin composition of this invention which consists of the above components, after filtering with the Millipore filter of 0.1-0.2 micrometer.

In addition, the present invention provides a display device comprising a cured product of the photosensitive resin composition and a pattern forming method of the display device using the photosensitive resin composition, the photosensitive resin composition of the present invention is not only PM-OLED, It can be applied to AM-OLED, AM-LCD, and PDP substrates by insulator or column spacer alone.

Specifically, the pattern forming method in the PM-OLED substrate is characterized by using the photosensitive resin composition in the method for forming the pattern of the PM-PLED substrate by forming the insulator and the separator at the same time.

As a more specific example, a method of forming a pattern of a PM-OLED substrate using the photosensitive resin composition is as follows.

First, the photosensitive resin composition of the present invention is applied to the surface of a substrate by a spraying method, a roll-coating method, a spin coating method, or the like, and the solvent is removed by pre-baking to form a coating film. At this time, the prebaking is preferably carried out for 1 to 15 minutes at a temperature of 80 ~ 120 ℃.

Then, visible light, ultraviolet light, far ultraviolet rays, electron beams, X-rays, or the like are irradiated to the formed coating film according to a pre-prepared pattern, and then subjected to post-exposure bake (PEB) and flood exposure as necessary. It develops and removes an unnecessary part, and a predetermined pattern is formed.

The developer is preferably an aqueous alkali solution, specifically, inorganic alkalis such as sodium hydroxide, potassium hydroxide and sodium carbonate; Primary amines such as ethylamine and n-propylamine; Secondary amines such as diethylamine and n-propylamine; Tertiary amines such as trimethylamine, methyldiethylamine, dimethylethylamine and triethylamine; Alcohol amines such as dimethylethanolamine, methyldiethanolamine and triethanolamine; Or an aqueous solution of a quaternary ammonium salt such as tetramethylammonium hydroxide or tetraethylammonium hydroxide. At this time, the developer is used by dissolving the alkaline compound in a concentration of 0.1 to 10 wt%, and a proper amount of a water-soluble organic solvent such as methanol, ethanol and the like and a surfactant may be added.

In addition, after developing with the developer as described above, it is washed with ultrapure water for 30 to 90 seconds to remove unnecessary parts and dried to form a pattern, the pattern is 30 to 90 minutes at a temperature of 130 ~ 250 ℃ by a heating apparatus such as an oven The heat treatment can give a final pattern.

The photosensitive resin composition according to the present invention is excellent in various performances, such as sensitivity and insulation, and in particular, it is possible to increase reliability and lifespan in a later process with excellent heat resistance. In addition, one photosensitive resin composition can simultaneously form two types of patterns, an insulator and a separator, which can shorten the process time, and at the same time, significantly improve the aperture ratio on the panel, thereby improving PM-OLED, AM-OLED, There is an advantage that can be applied to the manufacturing process of AM-LCD, PDP substrate.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited to the following examples.

[Example]

Example 1

(Polyhydroxy styrene resin production)

In a flask equipped with a cooling tube and an overhead stirrer, 6 parts by weight of AIBN, 400 parts by weight of tetrahydroxyfuran, 80 parts by weight of acetoxy styrene, and 20 parts by weight of styrene were replaced with nitrogen, followed by gentle stirring. The reaction solution was heated to 65 ° C. and maintained at that temperature for 28 hours to prepare a polymer solution comprising acetoxy styrene and styrene copolymer.

Then, 500 parts by weight of n-hexane was precipitated with respect to 5,000 parts by weight of the poor solvent in order to remove unreacted monomers of the polymer solution containing the prepared acetoxy styrene and the styrene copolymer. Then, the poor solvent in which unreacted material was dissolved was removed through a filtering process using a mesh. Thereafter, by vacuum drying at 40 ℃ to remove the solvent containing the unreacted monomer remaining after the filtering process to prepare the acetoxy styrene and styrene copolymer.

Then, the acetoxy styrene and styrene copolymers were dissolved in methanol to make 20% by weight of a polymer solution, and then 4.8 parts by weight of 28% by weight NH ₃ OH solution and acetic acid with respect to 100 parts by weight of the 20% by weight polymer solution. 4.7 parts by weight was added and stirred at 40 ° C. for 8 hours for hydrolysis. Thereafter, ultrapure water was purified using a poor solvent, followed by vacuum drying at 40 ° C. to prepare a polyhydroxy styrene resin having a weight average molecular weight of 7,000. In this case, the weight average molecular weight is a polystyrene reduced average molecular weight measured using GPC.

(1,2-quinonediazide compound preparation)

1 mole of 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol and 1,2-naphthoquinonediazide-5-sulfonic acid [ Chloride] condensation reaction of 2 moles to give 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol 1,2-naphthoquinonediazide 5-Sulfonic acid ester was prepared.

(Preparation of photosensitive resin composition)

100 parts by weight of the prepared polyhydroxy styrene resin and the prepared 4,4 '-[1- [4- [1- [4-hydroxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol 1 30 parts by weight of, 2-naphthoquinonediazide-5-sulfonic acid ester, 3 parts by weight of triazine-based TME-Triazine as a photoacid generator, and 10 parts by weight of melamine crosslinking agent represented by the following formula (3) were mixed. Then, the mixture was dissolved in propylene glycol methyl ether acetate so that the solid content of the mixture was 30% by weight, and then filtered through a 0.2 μm millipore filter to prepare a photosensitive resin composition.

(3)

Example 2

In preparing the polyhydroxy styrene-based resin in Example 1, 90 parts by weight of acetoxy styrene and 10 parts by weight of styrene is used instead of 80 parts by weight of acetoxy styrene and 20 parts by weight of styrene, and 28% by weight of NH ₃ during hydrolysis. A photosensitive resin composition was prepared in the same manner as in Example 1, except that 5.4 parts by weight of the OH solution and 5.3 parts by weight of acetic acid were used.

Example 3

In Example 1, 70 parts by weight of acetoxy styrene and 30 parts by weight of styrene were used instead of 80 parts by weight of acetoxy styrene and 20 parts by weight of styrene as a monomer when preparing the polyhydroxy styrene resin, and 28% by weight of NH ₃ during hydrolysis. A photosensitive resin composition was prepared in the same manner as in Example 1, except that 4.2 parts by weight of the OH solution and 4.1 parts by weight of acetic acid were used.

Example 4

In preparing the polyhydroxy styrene-based resin in Example 1 100 parts by weight of acetoxy styrene instead of 80 parts by weight of acetoxy styrene and 20 parts by weight of styrene, and 6.0 parts by weight of 28% by weight NH ₃ OH solution during hydrolysis And except that 5.9 parts by weight of acetic acid was carried out in the same manner as in Example 1 to prepare a photosensitive resin composition.

Example 5

A photosensitive resin composition was prepared in the same manner as in Example 1, except that 5 parts by weight of AIBN was used to prepare the polyhydroxy styrene resin in Example 1.

Example 6

A photosensitive resin composition was prepared in the same manner as in Example 1, except that 4 parts by weight of AIBN was used to prepare the polyhydroxy styrene resin in Example 1.

Example 7

Except for using bis (ethylsulfonyl) diazomethane in place of the triazine-based TME-Triazine as a photoacid generator when preparing the photosensitive resin composition in Example 1 was carried out in the same manner as in Example 1 photosensitive resin composition Was prepared.

Example 8

Except for using a nitrobenzylsulfonate-based 2,4-dinitrobenzylsulfonate in place of the triazine-based TME-Triazine as a photoacid generator when preparing the photosensitive resin composition in Example 1 in the same manner as in Example 1 It carried out to manufacture the photosensitive resin composition.

Comparative Example 1

(Novolak resin production)

45 g of metacresol, 55 g of paracresol, 65 g of formaldehyde, and 0.5 g of oxalic acid were added to an overhead stirrer and stirred to prepare a homogeneous mixture. The homogeneous mixture was heated to 95 ° C. and maintained at this temperature for 4 hours. The ring condenser was replaced with a distillation apparatus and the temperature of the homogeneous mixture was distilled at 110 ° C. for 2 hours. Vacuum distillation was carried out at 180 ° C. for 2 hours to distill off residual monomer and to cool the molten novolak resin to room temperature. Then, the weight average molecular weight was measured by GPC to obtain a novolak resin having a weight average molecular weight of 3,500. Here, the weight average molecular weight is the polystyrene reduced average molecular weight measured by GPC.

(Preparation of photosensitive resin composition)

A photosensitive resin composition was prepared in the same manner as in Example 1, except that the prepared novolak resin was used instead of the polyhydroxy styrene resin in Example 1.

Comparative Example 2

(Novolak resin production)

The weight average molecular weight of 7,000 was carried out in the same manner as in Example 1, except that 100 g of formaldehyde was used in Comparative Example 1, and the reaction mixture was heated to 95 ° C. and maintained at this temperature for 6 hours. Novolak resins were prepared.

(Preparation of photosensitive resin composition)

A photosensitive resin composition was prepared in the same manner as in Example 1, except that the prepared novolak resin was used instead of the polyhydroxy styrene resin in Example 1.

Comparative Example 3

A photosensitive resin composition was prepared by the same method as Example 1 except for using the polyimide resin represented by the following Formula 4 in place of the polyhydroxy styrene resin when preparing the photosensitive resin composition in Example 1. It was.

[Chemical Formula 4]

Comparative Example 4-1 (Positive Type)

Except for using a polyimide-based resin represented by the formula (4) in place of the polyhydroxy styrene-based resin when preparing the photosensitive resin composition in Example 1, and not using a photo-acid generator and melamine crosslinking agent It carried out by the same method as 1, and manufactured the positive photosensitive resin composition.

Comparative Example 4-2 (Negative Type)

In preparing the photosensitive resin composition in Example 1, 4,4 '-[1- [4- [1- [4-hydride, using the noblock resin prepared in Comparative Example 2 in place of polyhydroxy styrene-based resin Negative photosensitivity was carried out in the same manner as in Example 1 except that oxyphenyl] -1-methylethyl] phenyl] ethylidene] bisphenol 1,2-naphthoquinonediazide-5-sulfonic acid ester was not used. A resin composition was prepared.

Using the photosensitive resin composition prepared in Examples 1 to 8 and Comparative Examples 1 to 3 to form a film in the same manner as in the step 1 step below, using the photosensitive resin composition prepared in Comparative Example 4 and A film was formed in the same manner, and heat resistance, opening ratio, and insulation were measured using the same method, and the results are shown in Table 1 below.

A) 1 step process

감도 Positive Sensitivity-After application of the photosensitive resin composition prepared in Examples 1 to 8 and Comparative Examples 1 to 3 using a spin coater on a 370 × 470 mm glass substrate on which ITO was deposited, 110 ° C. The film was prebaked on a hot plate for 2 minutes to form a film having a thickness of 6.0 mu m. The formed film was irradiated with an ultraviolet ray having a intensity of 20 mW / cm 2 at 435 nm using a predetermined pattern mask to a dose of 50 μm isolated pattern CD based dose to clear, followed by tetramethyl ammonium hydroxide 2.38. After developing for 90 seconds at 23 degreeC with the aqueous solution of weight%, it wash | cleaned for 1 minute with ultrapure water, and obtained the pattern film which is 5.0 micrometers in thickness (FIG. 1). In FIG. 1, the part shown in black represents a mask, and a trapezoidal shape shows the photosensitive resin after image development.

감도 Negative Sensitivity-After irradiating ultraviolet ray having an intensity of 20 ㎽ / ㎠ at 435 nm on the film formed in 상기 with a pattern mask, Isolate Pattern 30 μm CD-based Dose amount was measured at 110 ° C. Post exposure bake (PEB) was performed on a hot plate for 90 seconds (FIG. 2). In FIG. 2, black portions represent two masks, hatched black portions in the trapezoid represent crosslinked portions after the PEB process, and white portions represent uncrosslinked portions after the crosslinking after the PEB process.

⑶ Front exposure sensitivity-After irradiating the entire surface with the exposure amount leaving 1.0 μm of the insulating film portion in the mask-free state as shown in FIG. 3, after developing at 23 ° C. for 100 seconds with an aqueous solution of 2.38% by weight of tetramethyl ammonium hydroxide, 1 Rinse for minutes.

As described above, the partition wall thickness is 4.0 µm, the insulation layer thickness is 1.0 µm, the angle pattern (θ ₁ ) of the positive pattern is 40-50 degrees, and the angle pattern (θ ₂ ) is 60 degrees. A pattern film having ˜70 degrees was obtained (FIG. 4).

Forming the insulator and separator with one type of photosensitive resin according to the method described above has a better margin than forming the insulator and separator with two types of photosensitive resin as in the following two step process.

B) 2 step process

In the 2 step process, since the insulator and separator are not formed at the same time, they have to be formed through 2 steps. In addition, in order to align the separator after forming the insulator, the Insulator CD should be larger than the 1 step process.

⑴ insulator process-First, the positive imide-based photosensitive resin composition prepared in Comparative Example 4-1 was coated on a 370 × 470 glass substrate on which ITO was deposited, and then, at 110 ° C. Prebaking was carried out on a hot plate for a minute to form a film having a thickness of 1.5 mu m. The formed film was irradiated with an ultraviolet ray having a intensity of 20 mW / cm 2 at 435 nm using a predetermined pattern mask to a 60 μm Isolate Pattern CD reference dose to clear amount, followed by tetramethyl ammonium hydroxide 2.38. After developing for 90 seconds at 23 degreeC with the aqueous solution of weight%, it wash | cleaned for 1 minute with ultrapure water. Then, it was heated and cured at 230 ° C. for 60 minutes in an oven to obtain 60 μm CD and 1.0 μm thick final pattern film.

⑵ separator process—The negative noblock-based photosensitive resin composition prepared in Comparative Example 4-2 was applied to the film formed in the insulator formation process of ⑴, followed by prebaking on a hot plate at 110 ° C. for 2 minutes. To form a film having a thickness of 5.0 mu m.

After aligning a predetermined pattern mask on the 6.0 μm CD and the 1.0 μm thick insulating film formed in the above (1), irradiating UV light having an intensity of 20 mW / cm 2 at 435 nm with 30 μm CD reference dose It baked after exposure on the hotplate at 110 degreeC for 90 second. Then, the solution was developed at 23 DEG C for 60 seconds in an aqueous solution of 2.38 wt% tetramethyl ammonium hydroxide, and washed with ultrapure water for 1 minute to obtain a 4.0 mu m pattern film.

C) heat resistance

Each pattern obtained through the step 1 and step 2 was heated and cured at 230 ° C. for 60 minutes in an oven to obtain a final pattern film.

In general, when the angle (θ ₁ ) of the positive pattern is low, leakage current may occur, and when the angle (θ ₂ ) of the negative pattern is high, it may be a problem when the organic layer and the metal are deposited. Thus, the case where the positive pattern Angle (θ ₁ ) is 30 to 50 degrees, the negative pattern Angle (θ ₂ ) is 60 to 75 degrees, the positive pattern Angle (θ ₁ ) is less than 30 degrees, the negative pattern of the Angle (θ ₂₎ is also not less than 75 was represented by ×.

D) aperture ratio

When the insulator and separator were formed on the 370 × 470 mm glass substrate on which ITO was deposited, the ITO area excluding the insulator and separator was evaluated as the aperture ratio (%).

E) insulation

A TFT device having an insulating film having a thickness of 1.0 μm and an area of 1 mm 2 formed through the steps a) to d) was made, and insulation was measured through a 1-V curve.

In general, PM-OLED requires high voltage driving to increase panel size, and insulation is important. Therefore, if the breakdown voltage is measured to be 2 MV / cm or more and the leakage current dysity is less than 10 ^-9 A / cm 2, the breakdown voltage is measured to measure the leakage current less than 2 MV / cm and the leakage current is 10 ^The case of more than ^-9 A / cm <2> is represented by x.

division
Positive sensitivity
(mJ / cm 2) Negative sensitivity
(mJ / cm 2) Front exposure sensitivity
(mJ / cm 2) Heat resistance Aperture ratio (%) Insulation practice
Yes




One 250 30 170 ○ 70 ○ 2 255 32 175 ○ 70 ○ 3 255 31 175 ○ 70 ○ 4 260 31 178 ○ 70 ○ 5 255 28 175 ○ 70 ○ 6 250 25 170 ○ 70 ○ 7 260 33 178 ○ 70 ○ 8 260 33 178 ○ 70 ○ ratio
School
Yes
One 255 50 175 × 70 × 2 260 45 178 × 70 × 3 300 Reverse Angle not formed 70 ○ 4 100 45 No front exposure × 55 ○

Through Table 1, the photosensitive resin composition prepared in Examples 1 to 8 according to the present invention was excellent in all of heat resistance, opening ratio, and insulation compared to Comparative Examples 1 to 4, especially in the case of heat resistance Comparative Example 1 It was confirmed that the remarkably excellent compared to 4 to 4, from which it can be seen that the photosensitive resin composition according to the present invention can obtain more excellent results when applied to the OLED manufacturing process.

On the contrary, in Comparative Examples 1 to 2, there was a problem in separation due to deterioration in heat resistance, and deterioration in insulation and deterioration in lifetime of the display. In addition, in the case of Comparative Example 3, Reverse Anlge was not formed, and in Comparative Example 4, there was no problem in insulation, but it was found that it was difficult to enlarge the display due to the significant decrease in the aperture ratio.

The photosensitive resin composition according to the present invention is excellent in various performances, such as sensitivity and insulation, and in particular, it is possible to increase reliability and lifespan in a later process with excellent heat resistance. In addition, one photosensitive resin composition can simultaneously form two types of patterns, an insulator and a separator, which can shorten the process time, and at the same time, significantly improve the aperture ratio on the panel, thereby improving PM-OLED, AM-OLED, There is an effect that can be applied to the manufacturing process of AM-LCD, PDP substrate.

Although only described in detail with respect to the described embodiments of the present invention, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, it is natural that such variations and modifications belong to the appended claims. .

Claims (13)

As a photosensitive resin composition which can form an insulator and a separator in one composition, a) 100 parts by weight of a polyhydroxy styrene resin having a polystyrene reduced weight average molecular weight (Mw) represented by the following Formula 1: 3,000 to 30,000; b) 5 to 50 parts by weight of 1,2-quinonediazide compound; c) 1 to 20 parts by weight of photoacid generator; d) 1 to 30 parts by weight of the melamine crosslinking agent represented by Formula 2 below; And e) a photosensitive resin composition comprising a solvent such that the total solid content in the photosensitive resin composition is from 10 to 50% by weight: [Formula 1]

In the formula (1) a and b represent a molar ratio between monomers, a is 1 to 10, b is 0 to 9, and a + b = 10, (2)

In the formula (2) R ₁ to R ₃ are each independently an alkyl group having 1 to 4 carbon atoms, R ₄ to R ₆ are each independently a hydrogen group or an alkyl group having 1 to 4 carbon atoms. delete The method of claim 1, The polyhydroxy styrene resin represented by the formula (1) of the a) is prepared by a radical polymerization method. The method of claim 1, The polyhydroxy styrene resin represented by Chemical Formula 1 of a) is radically polymerized acetoxy styrene and styrene in the presence of a solvent and a polymerization initiator, precipitated and filtered, and an unreacted monomer is subjected to a vacuum drying process. After removal, the resultant is dissolved in methanol to form a resin solution, hydrolyzed in the presence of ammonia water and acetic acid, precipitated and filtered, and manufactured through a vacuum drying process. delete The method of claim 1, The 1,2-quinonediazide compound of b) is used as 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, and 1,2-quinonediazide 6-sulfonic acid ester 1 or more types are chosen from the group which consists of a photosensitive resin composition characterized by the above-mentioned. The method of claim 1, The photoacid generator of c) includes sulfonium salts, iodonium salts, sulfonydiazomethane photoacid generators, N-sulfonyloxyimide photoacid generators, benzoin sulfonate photoacid generators, nitrobenzylsulfonate photoacid generators At least one selected from the group consisting of a sulfone photoacid generator, a glyoxime photoacid generator, and a triazine photoacid generator. The method of claim 1, The photoacid generator of c) Triphenolsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, bis (4-tert-butoxyphenyl) phenylsulfonium, 4-methylphenyldiphenylsulfonium, tris (4-methylphenylsulfonium), 4-tert-butylphenyldiphenylsulfonium, tris (4-tert-butylphenyl) sulfonium, tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, Bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxyphenyl) sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4- Ditert-butoxyphenyl) phenylsulfonium, tris (3,4-ditert-butoxyphenyl) sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert-butoxycarbonyl Methyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxyphenyl) sulfonium, (4-tert-butoxyphenyl) bis (4-dimethyl aminophenyl) sulfonium, tris (4- Dimethylaminophenyl) sulfonium, 2-naphthyldiphenylsulfonium, dimethyl-2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-meth Group consisting of oxyphenyldimethylsulfonium, trimethylsulfonium, diphenylmethylsulfonium, methyl-2oxopropylphenylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, and tribenzylsulfonium Sulfonium cation selected from trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pendafluorobenzenesulfonate, 4 -Trifuluromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methane Sulfonium salts which are salts of sulfonates (sulfonic acid anions) selected from the group consisting of sulfonates; Trifluoro iodonium cation and trifluoro selected from the group consisting of diphenyl iodonium, bis (4-tert-butylphenyl) iodonium, 4-tert-butoxyphenylphenyl iodonium, and 4-methoxyphenylphenyl iodonium Methanesulfonate, nonafluorobutasulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, Sulfonates selected from the group consisting of 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, and methanesulfonate Iodonium salt which is a salt of (sulfonic acid anion); Bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropofylsulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane , Bis (cyclohexylsulfonyl) diazomethane, bis (perfluororoisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4-methylphenylsulfonyl) diazomethane, bis ( 2,4-dimethylphenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, Consisting of 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl-2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, and tert-butoxycarbonyl-4-methylphenylsulfonyldiazomethane Sulfonyldiazomethane-based photoacid generators selected from the group; Succinic acid imide, naphthalenedicarboxylic acid imide, phthalic acid imide, cyclohexyldicarboxylic acid imide, 5-norbornene-2,3-dicarboxylic acid imide, 7-oxabicyclo [2, 2,1] -5-heptene-2,3-dicarboxylic acid imide, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoro Roethanesulfonate, pentafluorobenzenesulfonate, 4-trifluorofluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate , Dodecylbenzenesulfonate. N-sulfonyloxyimide type photoacid generator chosen from the group which consists of butanesulfonate and methanesulfonate; A benzoin sulfonate-based photoacid generator selected from the group consisting of benzointosylate, benzoin mesylate, and benzoin butanesulfonate; 2,4-dinitrobenzylsulfonate, 2-nitrobenzylsulfonate, 2,6-dinitrobenzylsulfonate (where sulfonates include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluoro Rooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate , Naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, or methanesulfonate), and a compound in which the nitro group on the benzyl side is substituted with a trifluoromethyl group. Selected nitrobenzylsulfonate-based photoacid generators; Bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2,2-bis (4-methylphenylsul Ponyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiononeone, 2- (cyclohexylcarbonyl) -2- (p-toluene Sulfonyl photoacid generators selected from the group consisting of sulfonyl) propane and 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one; Bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-o- (p-toluenesulfonyl) -α- Discitrohexylglyoxime, bis-o- (p-toluenesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (p-toluenesulfonyl) -2-methyl-3,4-pentanedione Glyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o- (n-butanesulfonyl) -α-dicyclohexylglyoxime, bis-o- (n-butanesulfonyl) -2,3-pentanedioneglyoxime, bis-o- (n-butanesulfonyl) -2-methyl-3,4- Pentanedionoglyoxime, bis-o- (methanesulfonyl) -α-dimethylglyoxime, bis-o- (trifluoromethanesulfonyl) -α-dimethylglyoxime, bis-o- (1,1,1 -Trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-o- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-o- (perfluorooctanesulfonyl) -α-dimethylglyco Oxime, bis-o- (cyclohexylsulfonyl) -α-dimethylgly Shim, bis-o- (benzenesulfonyl) -α-dimethylglyoxime, bis-o- (p-fluorobenzenesulfonyl) -α-dimethylglyoxime, bis-o- (p-tert-butylbenzenesul At least one member selected from the group consisting of: poly) -α-dimethylglyoxime, bis-o- (xylenesulfonyl) -α-dimethylglyoxime, and bis-o- (cambosulfonyl) -α-dimethylglyoxime Glyoxime photoacid generators; And Triazine photoacid generator selected from the group consisting of PDM-Triazine, WS-Triazine, PDM-Triazine, Dimethoxy-Triazine, MP-Triazine, TFE-Triazine, and TME-Triazine 1 or more types are selected from the group which consists of a photosensitive resin composition characterized by the above-mentioned. The method of claim 1, The solvent of e) is methanol, ethanol, benzyl alcohol, hexyl alcohol, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, ethylene glycol methyl ether propionate, ethylene glycol ethyl ether propionate, ethylene glycol methyl ether, ethylene Glycol ethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, propylene Glycol methyl ether propionate, propylene glycol ethyl ether propionate, propylene glycol propyl ether propionate, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene It consists of a ethylene glycol butyl ether, a dipropylene glycol dimethyl ether, a diporo ethylene glycol diethyl ether, a butylene glycol monomethyl ether, a butylene glycol monoethyl ether, a dibutylene glycol dimethyl ether, and a dibutylene glycol diethyl ether 1 or more types are selected from the group. Photosensitive resin composition characterized by the above-mentioned. A display device comprising the cured product of the photosensitive resin composition according to any one of claims 1, 3, 4, and 6 to 9. The method of claim 10, And the display device is a PM-OLED, AM-OLED, AM-LCD, or PDP substrate. The pattern formation method of the display apparatus using the photosensitive resin composition of any one of Claims 1, 3, 4, and 6-9. The method of claim 12, The pattern forming method of the display device, characterized in that the display device is a PM-OLED, AM-OLED, AM-LCD, or PDP substrate.

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