KR101275828B1 - Substrate for organic light emitting diodes, manufacturing method thereof and organic light emitting diodes with the same - Google Patents

Abstract

The present invention relates to an organic light emitting diode substrate having a first electrode, a hole layer, a light emitting layer, an electron layer, and a second electrode formed on an upper surface thereof, a method of manufacturing the same, and an organic light emitting diode having the same, and an organic light emitting diode according to the present invention. The substrate includes a light transmissive substrate member, and a resonance suppression layer formed on an upper surface of the substrate member, wherein the resonance suppression layer generates surface plasma resonance at an interface between the substrate member and the first electrode. And suppresses the dielectric material having a positive dielectric constant greater than the absolute value of the dielectric constant of the first electrode.
According to the present invention, there is provided a resonance suppression layer made of a dielectric material having a positive dielectric constant greater than the absolute value of the dielectric constant of the first electrode to suppress the occurrence of surface plasma resonance at the interface with the first electrode, thereby providing a It is possible to improve light extraction efficiency of organic light emitting diodes by preventing generated light from being absorbed and scattered by surface plasma resonance, and the resonance suppression layer is a physical and chemical vapor deposition method used in a general semiconductor process without using an additional lithography or patterning process. It can be manufactured at a simple and low cost.

Description

Substrate for organic light emitting diode, manufacturing method thereof and organic light emitting diode having same {SUBSTRATE FOR ORGANIC LIGHT EMITTING DIODES, MANUFACTURING METHOD THEREOF AND ORGANIC LIGHT EMITTING DIODES WITH THE SAME}

The present invention relates to a substrate for an organic light emitting diode, a method for manufacturing the same, and an organic light emitting diode having the same, and more particularly, an organic light emitting diode having a first electrode, a hole layer, a light emitting layer, an electron layer, and a second electrode formed on an upper surface thereof. As a substrate, a method for manufacturing the same, and an organic light emitting diode having the same, an organic light emitting diode substrate capable of improving light extraction efficiency and being manufactured at a simple and low cost, a method for manufacturing the same, and an organic light emitting diode having the same It is about.

In general, organic light emitting diodes (OLEDs) are next-generation display devices that emit light by using organic compounds. They are very fast in response and do not require a backlight device that reduces color due to self-luminous. It is widely used to equipment.

1 is a view showing a general structure of such an organic light emitting diode. The organic light emitting diode is composed of a positive electrode 20, a hole injection layer and a hole transport layer 30, such as a hole transport layer, an organic material on the transparent substrate 10, the light emitting layer 40, the electron injection layer and the light generated by combining electrons and holes The electron layer 50 such as the electron transport layer and the negative electrode 60 are stacked in this order.

The improvement of the efficiency of the organic light emitting diode improves the light emitting efficiency of the light emitting layer 40 or improves the light extraction efficiency so that the light generated in the light emitting layer 40 passes through the transparent substrate 10 as far as possible and is emitted to the front side. It is made in the form of improving.

Plasmon, on the other hand, refers to the collective movement of free electrons in a metal, called surface plasmon resonance (SPR). Refers to the phenomenon of absorbing.

In the above-described organic light emitting diode, when the positive electrode 20 made of a metal such as Ag having a negative dielectric constant is formed on the transparent substrate 10 made of a dielectric having a positive dielectric constant such as glass, the enlarged view of FIG. As shown in FIG. 3, when the light (visible light) emitted from the light emitting layer 40 passes through the positive electrode 20 and the transparent substrate 10, surface plasmon resonance as described above occurs at the interface thereof. That is, with respect to the configuration consisting of only the electrode Ag and glass SiO ₂ , it has a low efficiency of light transmittance in the range of about 30 to 40% in the wavelength range of 400 to 600 nm.

When surface plasmon resonance occurs at the interface between the positive electrode 20 and the transparent substrate 10, light is absorbed and scattered by the surface plasmon resonance, thereby deteriorating light transmittance and lowering light extraction efficiency of the organic light emitting diode. .

In order to solve the problems described above, the present invention can suppress the occurrence of surface plasma resonance that absorbs and scatters light at the interface between the first electrode and the substrate, and is simple by physical and chemical vapor deposition methods used in general semiconductor processes. Yet another object is to provide a substrate for an organic light emitting diode, a method for manufacturing the same, and an organic light emitting diode having the same, which can be manufactured at low cost.

In order to solve the above problems, the organic light emitting diode substrate according to the present invention is an organic light emitting diode substrate having a first electrode, a hole layer, a light emitting layer, an electron layer and a second electrode formed on the upper surface, And a resonance suppression layer formed on an upper surface of the substrate member, wherein the resonance suppression layer is configured to suppress surface plasma resonance from occurring at an interface between the substrate member and the first electrode. It is made of a dielectric material having a positive dielectric constant greater than the absolute value of the dielectric constant of.

The resonance suppression layer, WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and ZnS It may be made of a material containing at least one selected from.

The first electrode may be made of a material including at least one selected from the group consisting of Ag, Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, W, Ti, Mg, Li, and Ru.

The resonance suppression layer may be provided with a thickness of 5 ~ 5,000Å.

The method for manufacturing an organic light emitting diode substrate according to the present invention is a method for manufacturing an organic light emitting diode substrate having a first electrode, a hole layer, a light emitting layer, an electron layer, and a second electrode formed on an upper surface thereof. Forming a resonance suppression layer formed of a dielectric material having a positive dielectric constant greater than an absolute value of the dielectric constant of the first electrode on an upper surface of the substrate to suppress surface plasma resonance at an interface between the substrate member and the first electrode; It includes;

The resonance suppression layer, WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and ZnS It may be made of a material containing at least one selected from.

The resonance suppression layer may be formed to a thickness of 5 ~ 5,000Å.

The resonance suppression layer may be deposited by sputtering, electron beam deposition, thermal deposition, chemical vapor deposition, or laser deposition.

An organic light emitting diode according to the present invention comprises: a substrate including a substrate member having a light transmission and a resonance suppression layer formed on the upper surface of the substrate member and made of a dielectric material having a positive dielectric constant; A first electrode made of metal and formed on an upper surface of the resonance suppression layer of the substrate; A hole layer formed on an upper surface of the first electrode and injecting and transporting holes; An electron layer provided on the hole layer and injecting and transporting electrons; A light emitting layer provided between the hole layer and the electron layer and made of an organic material to generate light due to the combination of the electrons and the holes; And a second electrode formed of a metal and formed on an upper surface of the electronic layer, wherein the dielectric material forming the resonance suppression layer is configured to suppress surface plasma resonance from occurring at an interface between the substrate member and the first electrode. It is provided with a material having a dielectric constant greater than the absolute value of the dielectric constant of the first electrode.

The dielectric material constituting the resonance suppression layer is WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and It may be a material containing at least one selected from the group consisting of ZnS.

The first electrode may be made of a material including at least one selected from the group consisting of Ag, Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, W, Ti, Mg, Li, and Ru.

The thickness of the first electrode may be 5 ~ 1,000Å.

The resonance suppression layer may have a thickness of 5 to 5,000 kPa.

According to the organic light emitting diode substrate of the present invention, a method of manufacturing the same, and an organic light emitting diode having the same, a resonance suppression layer made of a dielectric material having a positive dielectric constant greater than an absolute value of the dielectric constant of the first electrode is formed on the upper surface of the substrate member. By being provided in the above, surface plasma resonance can be effectively suppressed from occurring at the interface between the first electrode and the substrate, and light emitted from the light emitting layer can be prevented from being absorbed and scattered due to the surface plasma resonance while passing through the first electrode and the substrate. .

Accordingly, light generated in the light emitting layer may not be lost due to surface plasma resonance at the interface between the first electrode and the substrate, thereby improving light transmittance and improving light extraction efficiency of the organic light emitting diode.

In addition, since the resonance suppression layer can be easily formed by physical and chemical vapor deposition methods such as sputtering, electron beam deposition, thermal deposition, and laser deposition, which are used in general semiconductor processes without using an additional lithography process or a patterning process, The substrate for an organic light emitting diode according to the present invention can be manufactured inexpensively and easily.

1 is an enlarged view showing a structure of a conventional organic light emitting diode having a substrate for an organic light emitting diode and a state in which light is absorbed and scattered by surface plasmon resonance;
2 is an enlarged view showing the structure of the organic light emitting diode having the organic light emitting diode substrate according to the preferred embodiment of the present invention and the state where the surface plasmon resonance is suppressed so that light passes through the first electrode and the substrate as it is;
3 shows comparative specimens and specimens in which a first electrode is formed of Ag on an organic light emitting diode substrate having a resonance suppression layer formed of ITO, SiO ₂ , MgO, WO ₃ , CaO, Ga ₂ O ₃ , respectively. Dark field image scattering image,
4 shows comparative specimens and specimens in which a first electrode is formed of Ag on an organic light emitting diode substrate having a resonance suppression layer formed of ITO, SiO ₂ , MgO, WO ₃ , CaO, Ga ₂ O ₃ , respectively. Graph showing dark field scattering spectrum of,
FIG. 5 shows comparative specimens and specimens in which a first electrode is formed of Ag on an organic light emitting diode substrate having a resonance suppression layer formed of ITO, SiO ₂ , MgO, WO ₃ , CaO, and Ga ₂ O ₃ , respectively. A graph showing the visible light wavelength range light transmittance of,
FIG. 6 shows an organic light emitting diode according to a preferred embodiment of the present invention having comparative organic light emitting diodes having a substrate on which a resonance suppression layer is formed of ITO and SiO _2, and a substrate on which a resonance suppression layer is formed of WO ₃ and CaO, respectively. Graph showing voltage-current density characteristics of light emitting diodes,
FIG. 7 illustrates an organic light emitting diode according to a preferred embodiment of the present invention having comparative organic light emitting diodes having a substrate on which a resonance suppression layer is formed of ITO and SiO ₂ , respectively, and a substrate on which a resonance suppression layer is formed of WO ₃ and CaO, respectively. Graph showing current density-luminance characteristics of light emitting diodes,
8 is a flowchart illustrating a method for manufacturing an organic light emitting diode substrate and an organic light emitting diode having the same according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains (hereinafter, referred to as a person skilled in the art) may easily perform the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

An organic light emitting diode substrate, a method of manufacturing the same, and an organic light emitting diode having the same according to the present invention can increase the light extraction efficiency by suppressing the occurrence of surface plasmon resonance at the interface between the first electrode and the substrate. The present invention relates to a substrate for an organic light emitting diode, a method for manufacturing the same, and an organic light emitting diode having the same.

Hereinafter, with reference to the accompanying Figures 2 to 7, the configuration of the organic light emitting diode 100 and the organic light emitting diode substrate (110, hereinafter referred to as "substrate") provided in accordance with a preferred embodiment of the present invention and The effect is described in detail.

In the organic light emitting diode 100 according to the preferred embodiment of the present invention, the substrate 110, the first electrode 120, the hole layer 130, the light emitting layer 140, the electron layer 150, and the second electrode 160 are provided. )

The substrate 110 supports the first electrode 120, the hole layer 130, the light emitting layer 140, the electron layer 150, and the second electrode 160, as shown in FIG. 2. The substrate member 111 and the resonance suppression layer 112 is included.

The substrate member 111 is made of a material having light transparency so that light generated in the light emitting layer 140 can be emitted to the first electrode 120 side, that is, to the front side, so that other components can be supported. It forms the body of the substrate 110.

In a preferred embodiment of the present invention, the substrate member 111 is made of glass (Glass) having a dielectric constant of 3.7 to 9.0 F / m, but not limited to polyethylene terephthalate (PET) used as a substrate for an organic light emitting diode ), Polyester (PES), polyethylene naphthalate (PEN), polycarbonate (PC) and the like.

The resonance suppression layer 112 is formed on the upper surface of the substrate member 111 and is larger than the absolute value of the dielectric constant of the first electrode 120 made of a metal having a negative dielectric constant such as Ag having a dielectric constant of −9.3 F / m. It is made of a dielectric material with a positive dielectric constant. That is, when the first electrode 120 is made of Ag, the resonance suppression layer 112 is made of a dielectric material having a dielectric constant greater than 9.3 F / m.

As an exemplary embodiment of the present invention, the resonance suppression layer 112 has been described in the case where the dielectric constant is composed of 35.2 F / m WO ₃ , 21.8 F / m CaO, 10.7 Ga ₂ O ₃ , but is not limited thereto. Instead, various dielectric materials having a dielectric constant greater than the absolute value of the dielectric constant of the material may be applied according to the material forming the first electrode 120.

For example, the resonance suppression layer 112 is a dielectric material having a relatively large amount of dielectric constant MoO ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O _{3 ,} ZnS or a mixed material containing one or more thereof.

On the other hand, the characteristics of surface plasmon resonance can be deduced mostly from Maxwell's equation, etc. For surface plasmon resonance occurring at the interface between metal and dielectric having negative permittivity, dielectric constant of metal is ε _m and dielectric constant is ε _d If the equation is summarized using Maxwell's equation and the equation is simplified to boundary conditions and continuous conditions, the wave vector of the surface plasma generation condition is calculated as follows.

Here, in order to satisfy the condition q (ω)> 0 where the wave vector, q (ω), has an actual value, it must be | ε _m │> │ ε _d │. For example, when the metal is Ag, ε _m = ε _Ag = -9.7 + i 0.45, so that surface plasmon resonance occurs when the dielectric constant of the dielectric is less than 9.7.

As can be seen from the surface plasmon resonance generation conditions as described above, the dielectric material having a positive dielectric constant greater than the absolute value of the dielectric constant of the first electrode 120 between the substrate member 111 and the first electrode 120. When the resonance suppression layer 112 is formed, it is possible to effectively suppress the occurrence of surface plasmon resonance at the interface between the substrate 110 and the first electrode 120.

That is, as shown in the enlarged view of FIG. 2, when light passes through the interface between the substrate 110 and the first electrode 120, the occurrence of surface plasmon resonance at the interface can be effectively suppressed. As a result, the amount of light absorbed and scattered can be greatly reduced, thereby improving light transmittance and improving light extraction efficiency of the organic light emitting diode 100.

FIG. 3 shows a light microscope through the specimen in which the first electrode 120 is formed of Ag on the upper surface of the substrate 110 including the substrate member 111 and the resonance suppression layer 112. Observed dark field scattering image.

In Figure 3, the specimen is a preferred embodiment of the present invention, the substrate member 111 is provided with a glass and the resonance suppression layer 112 is formed with a thickness of 10 nm each of WO ₃ , CaO, Ga ₂ O ₃ In addition, the first electrode 120 was formed to have a thickness of 10 nm on the upper surface of Ag, and in order to contrast the effect, the resonance suppression layer 112 has an absolute value of dielectric constant smaller than that of the first electrode 120. Comparative specimens having the same thickness as SiO ₂ and MgO are shown together as a comparative example.

The dark field scattering image shown in the upper column 1 is a dark field scattering image of the comparative specimen in which the resonance suppression layer 112 is formed of ITO, SiO ₂ , and MgO. At the interface between the substrate 110 and the first electrode 120. It can be seen that the surface plasmon resonance was not suppressed and bright scattering images were observed.

In contrast, the dark field scattering image shown in the lower row 2 is a dark field scattering image of the specimen, which is a preferred embodiment of the present invention, wherein the resonance suppression layer 112 is formed of WO ₃ , CaO, or Ga ₂ O ₃ . As the occurrence of surface plasmon resonance at the interface between the substrate 110 and the first electrode 120 is effectively suppressed, light absorbed and scattered is greatly reduced, and dark scattering images are observed.

FIG. 4 is a graph showing the dark field image spectra of the specimen and the comparative specimen, which is a preferred embodiment of the present invention of FIG. 3.

First, the comparative specimen in which the resonance suppression layer 112 is formed of ITO, SiO ₂ , and MgO shows high intensity in the visible region (400 to 700 nm), as shown in FIG. 3. This is because surface plasmon resonance is not suppressed at the interface between the substrate 110 and the first electrode 120, so that a small amount of light is scattered and absorbed.

On the other hand, in the case of the specimen which is the preferred embodiment of the present invention in which the resonance suppression layer 112 is formed of WO ₃ , CaO, Ga ₂ O ₃ , the overall light intensity is very low, which means that the substrate 110 and the first electrode ( It is interpreted that the absorbed and scattered light is greatly reduced while the occurrence of surface plasmon resonance at the interface of 120) is effectively suppressed.

FIG. 5 is a graph illustrating the results of the light transmission of the specimen and the comparative specimen of FIG. 3 after the change according to the wavelength using a tungsten-halogen lamp, respectively.

First, in the case of the comparative specimen formed with the resonance suppression layer 112 of ITO, SiO ₂ , MgO, it can be seen that the light transmittance characteristics of less than 60% in the emission wavelength region 400 ~ 600nm of the light emitting layer 140. This is because, as mentioned in the description of FIGS. 3 and 4, surface plasmon resonance is not effectively suppressed and light loss due to absorption and scattering is turned on.

On the contrary, in the case of the specimen which is a preferred embodiment of the present invention in which the resonance suppression layer 112 is formed of WO ₃ , CaO, Ga ₂ O ₃ , all of the specimens exhibit light transmittance characteristics of 60% or more in the wavelength range. This is interpreted as the surface plasmon resonance is effectively suppressed by the resonance suppression layer 112 to reduce the loss of light.

On the other hand, the resonance suppression layer 112 is preferably formed on the upper surface of the substrate member 111 to a thickness of 5 ~ 5,000Å.

The reason is that when the thickness of the resonance suppression layer 112 is 5 m or less, the thickness is so thin that the effect of suppressing the occurrence of surface plasmon resonance at the interface between the substrate 110 and the first electrode 120 is not so desirable. If the thickness is greater than 5,000 mW, it is not preferable because the light transmittance of the resonance suppression layer 112 itself cannot be reduced to serve as a transparent electrode.

The resonance suppression layer 112 may be formed on the substrate member 111 easily and inexpensively by sputtering, electron beam deposition, thermal deposition, chemical vapor deposition, or laser deposition.

The first electrode 120 described above is a metal that is light transmissive and has high electrical conductivity, and is formed on the upper surface of the substrate 110 to be in contact with the resonance suppression layer 112. In a preferred embodiment of the present invention, the first electrode 120 is made of Ag, but is not limited thereto. Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, It may be made of W, Ti, Mg, Li, Ru or a mixed material containing one or more thereof.

The thickness of the first electrode 120 is preferably formed to be 5 ~ 1,000Å, the reason is that when the thickness of the first electrode 120 is less than 5Å because the surface resistance is very large value of the electrical characteristics of the device It is not preferable because it greatly reduces, and when the thickness of the first electrode 120 is 1,000 Å or more, the light transmittance is reduced and the light reflection characteristic is strong, which is not preferable because it cannot serve as a transparent electrode.

The first electrode 120 may also be easily and inexpensively formed on the substrate 110 by sputtering, electron beam deposition, thermal deposition, chemical vapor deposition, or laser deposition.

The hole layer 130 is formed on the upper surface of the first electrode 120 in the form of a single layer or a multilayer, such as α-NPD, so as to inject and transport holes to be delivered to the light emitting layer 140.

The emission layer 140 is formed on the upper side of the hole layer 130 and is made of organic material such as TCTA doped with Flr6, and the hole transferred through the hole layer 130 and the electron transferred through the electron layer 150 are combined. This is where light comes from.

In addition, the electronic layer 150 is formed on the upper side of the light emitting layer 140 in a single layer or a multilayer form of LiF, Alq ₃ , or the like so as to inject and transport electrons to be delivered to the light emitting layer 140. That is, the emission layer 140 is interposed between the electronic layer 150 and the hole layer 130.

The second electrode 160 is formed of a metal such as Al having a high electrical conductivity on the upper side of the electronic layer 150, and may be formed so that light generated in the light emitting layer 140 can be emitted to the front side of the substrate 110 side as much as possible. The second electrode 160 may be provided to have a high reflectance to reflect the light emitted to the rear side toward the front side.

FIG. 6 is a graph illustrating voltage-current density characteristics of the organic light emitting diode 100 according to the preferred embodiment of the present invention.

Here, as an exemplary embodiment of the present invention, an organic light emitting diode 100 having a substrate 110 having a resonance suppression layer 112 formed of a thickness of 10 nm using WO ₃ and CaO, respectively, is used. For this purpose, the voltage-current density characteristics of the comparative organic light emitting diode including the substrate 110 formed of ITO, SiO ₂ , having the absolute value of dielectric constant smaller than that of the first electrode 120 are illustrated together. .

Referring to FIG. 6, it can be seen that voltage-current density characteristics of all organic light emitting diodes 100 are not significantly different. This is because, regardless of the resonance suppression layer 112, the same charge is injected through the first electrode 120 by the voltage applied to each of the organic light emitting diodes 100. This is because it is the same for every light emitting diode 100.

That is, in the case of the organic light emitting diode 100 provided with the resonance suppression layer 112 that suppresses surface plasmon resonance, it can be seen that voltage-current density characteristics are not deteriorated.

FIG. 7 is a graph illustrating current density-luminance characteristics of the organic light emitting diode 100 and the comparative organic light emitting diode 100 according to the preferred embodiment of the present invention, respectively.

Referring to FIG. 7, the organic light emitting diode 100 including the substrate 110 having the resonance suppression layer 112 formed of WO ₃ or CaO is formed of a substrate having the resonance suppression layer 112 formed of ITO, SiO ₂ , or the like. Compared with the comparative organic light-emitting diode having (110), the overall high brightness, that is, improved optical characteristics are exhibited.

Specifically, the organic light emitting diode 100 including the substrate 110 having the resonance suppression layer 112 formed of WO ₃ and CaO at a current density of 220 mA / cm 2 was 27,500 cd / m 2 and 25,000 cd / m 2, respectively. Comparative organic light-emitting diodes having a substrate 110 formed of ITO and SiO ₂ having a luminance suppressing layer 112 but having an absolute value of dielectric constant smaller than that of the first electrode 120 are 21,900 cd / m 2, respectively. It can be seen that the luminance is only 19,800 cd / m 2.

This result is due to the improved permeability due to the effective suppression of the occurrence of surface plasmon resonance at the interface between the substrate 110 and the first electrode 120 by the resonance suppression layer 112 formed of WO ₃ , CaO. .

Hereinafter, an organic light emitting diode substrate 110 and a method of manufacturing the organic light emitting diode 100 including the same according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 2 and 8.

First, a substrate member 111 made of a material such as glass or resin having light transmittance is prepared, and WO ₃ , CaO, and Ga, which are materials forming the resonance suppression layer 112 to be deposited on the upper surface of the substrate member 111. After evaporating ₂ O ₃ or the like through electron beam scanning, the vaporized WO ₃ , CaO, Ga ₂ O ₃ is vacuum-deposited on the upper surface of the substrate member 111, and when the thickness thereof is deposited to 5 to 5,000 kPa, the deposition is performed. By stopping, the substrate 110 having a resonance suppression layer 112 having a thickness of 5 ~ 5,000Å on the upper surface of the substrate member 111 is manufactured (s100).

In a preferred embodiment of the present invention, the resonance suppression layer 112 is formed through an electron beam deposition method, the formation method is not limited to this may be formed by sputtering, thermal deposition, chemical vapor deposition or laser deposition. When the resonance suppression layer 112 is formed by such a simple and inexpensive method, the resonance suppression layer 112 may be easily and inexpensively formed because there is no need to perform a separate complicated lithography process or a patterning process.

Next, a first material made of Ag, Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, W, Ti, Mg, Li, Ru, or a mixed material including one or more thereof on the top surface of the substrate 110. Similarly to the method of forming the resonance suppression layer 112 described above, the electrode 120 is deposited to have a thickness of 5 to 1,000 Å (s200).

Subsequently, a hole injection layer 130 made of α-NPD and the like may be formed on the upper surface of the first electrode 120 (s300), and the TCTA doped with Flr6 on the upper surface of the hole layer 130 may be formed. A light emitting layer 140 made of an organic material is formed (S400).

Next, an electron injection layer made of LiF, Alq ₃ and the like and an electron transport layer 150 such as an electron transport layer are formed on the upper surface of the light emitting layer 140 (s500), and then the electrical conductivity and reflectance on the upper surface of the electron layer 150 are formed. By stacking the second electrode 160 with this high Al or the like (s600), the organic light emitting diode 100 is completed.

As described above, according to the organic light emitting diode substrate 110, the manufacturing method thereof, and the organic light emitting diode 100 including the same, a dielectric constant greater than an absolute value of the dielectric constant of the first electrode 120 may be obtained. Since the resonance suppression layer 112 is formed of a dielectric material to suppress surface plasma resonance from occurring at the interface with the first electrode 120, light generated in the light emitting layer 140 is not absorbed and scattered by the surface plasma resonance. It is possible to improve the light extraction efficiency of the organic light emitting diode 100, the resonance suppression layer 112 is a simple and low cost by the physical and chemical vapor deposition method used in the general semiconductor process without the additional lithography process or patterning process It can be prepared as.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and variations belong to the appended claims. will be.

Description of the Related Art [0002]
100 organic light emitting diode 110 substrate for organic light emitting diode
111 substrate member 112 resonance suppression layer
120: first electrode 130: hole layer
140: light emitting layer 150: electron layer
160: second electrode

Claims (13)

An organic light emitting diode substrate having a first electrode, a hole layer, a light emitting layer, an electron layer, and a second electrode formed on an upper surface thereof.
It includes a substrate member having a light transmission, and a resonance suppression layer formed on the upper surface of the substrate member,
The resonance suppression layer is made of a dielectric material having a dielectric constant greater than the absolute value of the dielectric constant of the first electrode to suppress the occurrence of surface plasma resonance at the interface between the substrate member and the first electrode Light emitting diode substrate. The method of claim 1,
The resonance suppression layer, WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and ZnS Substrate for an organic light emitting diode, characterized in that consisting of a material containing at least one selected from. The method of claim 1,
The first electrode is made of a material containing at least one selected from the group consisting of Ag, Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, W, Ti, Mg, Li and Ru. An organic light emitting diode substrate. 4. The method according to any one of claims 1 to 3,
The thickness of the resonance suppression layer is an organic light emitting diode substrate, characterized in that 5 ~ 5,000 5. A method of manufacturing a substrate for an organic light emitting diode, wherein a first electrode, a hole layer, a light emitting layer, an electron layer, and a second electrode are formed on an upper surface thereof.
Resonance to suppress the occurrence of surface plasma resonance at the interface between the substrate member and the first electrode made of a dielectric material having a positive dielectric constant greater than the absolute value of the dielectric constant of the first electrode on the light transmissive substrate member Forming a suppression layer;
Method for manufacturing a substrate for an organic light emitting diode comprising a. The method of claim 5,
The resonance suppression layer, WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and ZnS Method of manufacturing a substrate for an organic light emitting diode, characterized in that consisting of a material containing at least one selected from. The method of claim 5,
The thickness of the resonance suppression layer is a manufacturing method of the organic light emitting diode substrate, characterized in that 5 ~ 5,000Å. 8. The method according to any one of claims 5 to 7,
The resonance suppression layer is formed by sputtering, electron beam deposition, thermal deposition, chemical vapor deposition or laser deposition method of manufacturing a substrate for an organic light emitting diode. A substrate comprising a substrate member having a light transmittance and a resonance suppression layer formed on an upper surface of the substrate member and made of a dielectric material having a positive dielectric constant;
A first electrode made of metal and formed on an upper surface of the resonance suppression layer of the substrate;
A hole layer formed on an upper surface of the first electrode and injecting and transporting holes;
An electron layer provided on the hole layer and injecting and transporting electrons;
A light emitting layer provided between the hole layer and the electron layer and made of an organic material to generate light due to the combination of the electrons and the holes; And
And a second electrode formed of a metal and formed on an upper surface of the electronic layer.
The dielectric material constituting the resonance suppression layer is formed of a material having a dielectric constant greater than an absolute value of the dielectric constant of the first electrode to suppress surface plasma resonance from occurring at an interface between the substrate member and the first electrode. Organic light emitting diode. 10. The method of claim 9,
The dielectric material constituting the resonance suppression layer is WO ₃ , MoO ₃ , CaO, Ga ₂ O ₃ , MgO, ITO, ZnO, AZO, NiO, SiO 2, SiO, V ₂ O ₅ , SnO ₂ , In ₂ O ₃ and An organic light emitting diode, characterized in that the material containing at least one selected from the group consisting of ZnS. 10. The method of claim 9,
The first electrode is made of a material containing at least one selected from the group consisting of Ag, Au, Al, Cu, Ni, Pt, Ir, Rh, Mo, W, Ti, Mg, Li and Ru. Organic light emitting diode. 10. The method of claim 9,
The thickness of the first electrode is an organic light emitting diode, characterized in that 5 ~ 1,000Å. 13. The method according to any one of claims 9 to 12,
The thickness of the resonance suppression layer is an organic light emitting diode, characterized in that 5 ~ 5,000Å.

Images