KR101271864B1 - Method of manufacturing flexible electronic device, flexible electronic device and flexible substrate using a flexible mother substrate and roll to roll process - Google Patents

Abstract

The present invention is to solve the problems of performance and yield degradation of the flexible electronic device due to the problems of low processable temperature, high surface roughness, high thermal expansion coefficient, poor handling characteristics of the existing flexible substrate.
A method of manufacturing a flexible electronic device using the flexible mother substrate according to the present invention may include forming a flexible substrate on the flexible mother substrate, separating the flexible substrate from the flexible mother substrate, and the flexible mother substrate in contact with the flexible mother substrate. And forming an electronic device on the separation surface of the substrate.

Description

TECHNICAL MANUFACTURING FLEXIBLE ELECTRONIC DEVICE, FLEXIBLE ELECTRONIC DEVICE AND FLEXIBLE SUBSTRATE USING A FLEXIBLE MOTHER SUBSTRATE AND ROLL TO ROLL PROCESS}

The present invention relates to a method for manufacturing a flexible metal substrate and a flexible electronic device, and a flexible metal substrate used for the flexible electronic device and the flexible electronic device manufactured by the method. The present invention relates to a flexible electronic device including a novel flexible substrate having a high process temperature at the glass substrate level and having a low surface roughness, a low coefficient of thermal expansion, and excellent handling characteristics.

Recently, with the development of multimedia, the importance of flexible electronic devices has increased. Accordingly, an organic light emitting diode (OLED), a liquid crystal display (LCD), an electrophoretic display (EPD), a plasma display panel (PDP), a thin film transistor ( There is a demand for thin-film transistors (TFTs), microprocessors, random access memory (RAM), and solar cells on flexible substrates.

Among them, it is important to develop a technology that can produce an active matrix organic light emitting diode (AMOLED), which is the most likely to implement a flexible display and has the best characteristics, with a high yield while using the polysilicon TFT process developed as it is. Is emerging.

On the other hand, in relation to a method for manufacturing an electronic device using a flexible substrate, three different methods have been proposed: a method of directly manufacturing on a plastic substrate, a method of using a transfer process, and a method of directly manufacturing on a metal substrate.

First, in relation to a method of directly manufacturing an electronic device on a plastic substrate, Korean Patent Laid-Open Publication No. 2009-0114195 discloses attaching a flexible substrate made of a polymer material on a glass substrate, and then forming an electronic device from the glass substrate. A method of separating is disclosed, and Korean Patent Laid-Open Publication No. 2006-0134934 discloses a method of manufacturing a flexible electronic device by coating a plastic on a glass substrate by a spin-on method and then making an electronic device, and then separating it from the glass substrate. have.

However, since the substrate is made of plastic, the technology disclosed in the above patents has a processable temperature of 100 to 350 ° C. Since the process is essential, there is a problem that the device cannot be manufactured with a plastic substrate. In addition, in the manufacturing process, due to the difference in the coefficient of thermal expansion between the inorganic semiconductor, such as Si, SiO ₂ , SiN, and the insulator and the plastic of the substrate, defects such as cracking and peeling may occur, resulting in a lowered yield. When used as a substrate for organic semiconductors vulnerable to moisture, a separate moisture penetration prevention layer should be formed. In addition, when used as a substrate for an organic light emitting device for large-area illumination, it does not dissipate heat from the entire lighting, so the life of the organic electronic device is reduced, so a separate heat dissipation layer should be used.

In addition, in relation to a method using a transfer process, Korean Patent Laid-Open Publication No. 2004-0097228 discloses forming a separation layer, a thin film device, an adhesive layer, and a temporary substrate in order on a glass substrate, and then irradiating the separation layer with light such as a laser. A method of separating the glass substrate and the transfer layer is disclosed.

However, in the transfer process, since the thin film device is thin, a double transfer process is necessary in which a temporary substrate is attached to the upper part to make a device and later remove the temporary substrate again. This method attaches and removes a temporary substrate on the thin film device, which is not applicable to organic electronic devices such as OLEDs, which have weak interfacial bonding strength and are vulnerable to moisture or solvent. In addition, in the process of bonding and removing the glass substrate and the temporary substrate, defects such as cracking of a thin film device and mixing of foreign matters may occur, resulting in a low yield.

In addition, in relation to a process using a metal substrate, Korean Patent Laid-Open Publication No. 2008-0024037 discloses a method for providing a flexible electronic device having high production yield by lowering surface roughness through a buffer film containing a glass component on a metal substrate. Korean Patent Laid-Open Publication No. 2009-0123164 discloses a method of improving the yield by polishing an embossed pattern on a metal substrate by polishing, and Korean Laid-Open Patent Publication No. 2008-0065210 discloses a glass substrate. The method of forming a peeling layer and a metal film in this is disclosed.

However, a thick film metal substrate having a thickness of 15 to 150 µm used in a flexible electronic device has a surface roughness of several hundred nm or more in terms of its manufacturing method. For example, in the case of the metal thick film produced by rolling, there is a rolling trace, and in the case of the metal thick film formed by evaporation on a glass substrate, the surface roughness increases proportionally as the thickness increases, so that the deposition method and conditions There is a problem in manufacturing a flexible metal substrate to have a low surface roughness because it changes. Accordingly, when using a conventional metal substrate, in order to reduce the surface roughness on the metal substrate, it was essential to apply a polymer-based flattening layer on the metal substrate or perform a polishing process. However, when the surface roughness is reduced by using a polymer series, there is a problem in that a high temperature process cannot be used in the same way as the plastic substrate process, and in the case of a polishing process, an expensive microprocessor or RAM using a single crystal Si substrate is produced. Although suitable for the case, there is a problem in that the economic efficiency is greatly lowered when applied to a flexible electronic device requiring a relatively low cost and a large area.

Republic of Korea Patent Publication No. 2009-0114195 Republic of Korea Patent Publication No. 2006-0134934 Republic of Korea Patent Publication No. 2004-0097228 Republic of Korea Patent Publication No. 2008-0024037 Republic of Korea Patent Publication No. 2009-0123164 Republic of Korea Patent Publication No. 2008-0065210

The present invention is to solve the problems of the prior art as described above, the main problem of the present invention is to produce a flexible metal substrate having a low surface roughness that can obtain the same level of device characteristics as conventional glass substrate process It is to provide a method of manufacturing a flexible electronic device including the method.

Another object of the present invention is to provide a method of manufacturing a high-performance flexible electronic device that can be applied to the same or higher temperature process than the process using a conventional glass substrate.

Another object of the present invention is to provide a method of manufacturing a metal substrate for a flexible electronic device, by applying the characteristics of the flexible substrate to a roll-to-roll process, which enables high production speed and mass production.

Another object of the present invention is to provide a method of manufacturing a metal substrate for a flexible electronic device for reducing the surface roughness of the flexible electronic device by reducing scratches and particles of the mother substrate.

Another task is to enable the mother substrate to be managed without repetitive film formation or polishing, and to transfer the surface roughness of the mother substrate as it is to increase the mass productivity of the metal substrate for the flexible electronic device, and to reuse the mother substrate. It is to provide a method for maintaining the surface roughness.

Another object of the present invention is to provide a method of providing a flexible metal substrate having a low coefficient of thermal expansion having a single composition so that there is no problem of cracking or peeling due to a difference between the electronic device and the coefficient of thermal expansion.

According to an aspect of the present invention, there is provided a method of manufacturing a flexible electronic device using a flexible mother substrate, the method comprising: (a) forming a flexible substrate on a flexible mother substrate; and (b) forming the flexible substrate on the flexible mother substrate. Separating from the plate and (c) forming an electronic device on the separation surface of the flexible substrate that has been in contact with the flexible mother substrate.

According to a method of manufacturing a flexible electronic device using a flexible mother substrate, the flexible mother substrate is a conductive cathode having corrosion resistance to an acid plating solution or a basic plating solution, and (a) forming a flexible substrate on the flexible mother substrate. Making; (b) separating the flexible substrate from the flexible mother substrate; And (c) forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother substrate.

A method of manufacturing a flexible electronic device using a flexible mother substrate includes: (a) forming a protective layer having corrosion resistance to an acid plating solution or a basic plating solution on the flexible mother substrate; (b) forming a flexible substrate on the protective layer; (c) separating the flexible substrate from the flexible mother substrate; And (d) forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother substrate.

The step (a) may be performed by (a1) drawing out the flexible mother substrate from the mother substrate supply roll on which the flexible mother substrate is wound, and (a2) a thin metal film to be used as the flexible substrate on the flexible mother substrate being drawn out. In the step (b), characterized in that for separating the flexible substrate from the flexible mother substrate through a separation roll that rotates in engagement with the draw roll.

The step (b) may include (b1) withdrawing the flexible mother substrate through a draw roll from the mother substrate supply roll on which the flexible mother substrate is wound; And (b2) forming a metal thin film to be used as the flexible substrate on the flexible mother substrate to be drawn out, and in the step (c), the flexible mother substrate is separated from the flexible mother substrate through a separation roll that rotates in engagement with the extraction roll. It is characterized by separating the flexible substrate.

In the method for manufacturing a flexible electronic device according to the present invention, the thickness of the flexible mother substrate is 1 μm or more and 5,000 μm or less, and more preferably 50 μm or more and 2,000 μm or less.

In the method of manufacturing a flexible electronic device according to the present invention, a flexible substrate is formed on both sides of the flexible mother substrate.

In the method of manufacturing a flexible electronic device according to the present invention, after forming a flexible substrate on the surface of the flexible mother substrate which can be repeatedly used with a very low surface roughness, the flexible substrate is separated by the flexible mother substrate, and the separation surface of the flexible substrate is Since the surface state almost similar to the surface state of the flexible mother substrate can be obtained, it is not necessary to apply a polymer to lower the surface roughness as in the prior art, thereby realizing a high-performance electronic device through a high temperature process, and an expensive polishing process, The low yield problem due to the high defect density can be solved at the same time, which is advantageous for improving the economics.

Since the method for manufacturing a flexible electronic device according to the present invention uses a roll-to-roll process in which a flexible mother substrate is applied, the flexible substrate can be transported in a rolled form, and if necessary, the production, transfer, electronic device formation and The same process can be carried out continuously, which is advantageous for having high production speeds and economics.

In the manufacturing method of the flexible electronic device according to the present invention, since the flexible mother substrate without surface scratches or particles is continuously supplied through a roll-to-roll process, the cleanliness and flatness of the mother substrate can be maintained at all times, without interruption of the substrate production process. The mother substrate from which the flexible substrate is removed can be repeatedly used by washing. Also, a roll-to-roll process may be performed as in the present invention as compared to a method using a rectangular substrate such as glass or a roll-shaped mother substrate, such as a batch type process. When the flexible substrate is formed on the flexible mother substrate supplied through the substrate, the area for forming the substrate can be greatly increased, thereby increasing economic efficiency and productivity.

Since the manufacturing method of the flexible electronic device according to the present invention uses a metal substrate, existing glass substrate process conditions and equipment using a high temperature process of 450 ° C. or higher can be used as it is without problems such as warping, conveying, and aligning the substrate.

In the method of manufacturing a flexible electronic device according to the present invention, the flexible mother substrate is separated from the flexible substrate and the surface roughness is maintained so that it can be reused in the flexible substrate forming step without repeated polishing or film formation. . In addition, the protective layer formed on the flexible mother substrate is characterized in that the surface roughness is maintained after being separated from the flexible substrate.

In the manufacturing method of the flexible electronic device according to the present invention, the flexible mother substrate is characterized in that the passivation film is formed on the surface by the oxidation treatment or nitriding treatment, in particular, the passivation coating on the flexible mother substrate is a flexible mother substrate The surface is formed by irradiating or irradiating a zigzag line, a laser, an electron beam in the at least one gas atmosphere of air | atmosphere, oxygen, and nitrogen, or the plasma process. In addition, the thickness of the non-coat coating is characterized in that 1 nm or more and 100 nm or less, preferably 1 nm or more and 20 nm or less.

In the method of manufacturing a flexible electronic device according to the present invention, a protective layer having corrosion resistance against an acid plating solution or a basic plating solution is further formed on the flexible mother substrate, and before the protective layer forming step. In order to prevent separation of the flexible mother substrate and the protective layer, the surface of the flexible mother substrate on which the protective layer is to be formed is subjected to plasma treatment or UV irradiation on the surface of the mother substrate. In addition, before the protective layer forming step, in order to prevent separation of the flexible mother substrate and the protective layer is characterized in that for using a bonding layer of Mo, Ni, Cr, Ti, Fe and the like. In addition, in the forming of the protective layer, in order to prevent separation of the flexible mother substrate and the protective layer, a sputtering method, an electron beam deposition method or an ion plating method, or a method of irradiating an ion beam to the protective layer being formed, The flexible mother substrate is characterized by heating to more than 100 ℃ 800 ℃.

In the method of manufacturing a flexible electronic device according to the present invention, the protective layer is characterized in that it comprises at least one selected from the group consisting of Au, Pt, Ir, Pd, Os, Rh, Ru and oxides thereof. In addition, the protective layer is characterized in that it comprises at least one selected from the group consisting of oxides or nitrides of Mo, Ni, Cr, Ti, Fe, Al, B, C. Here, the protective layer has a thickness of 1 nm or more and 1000 nm or less. Preferably, the protective layer has a thickness of 10 nm or more and 100 nm or less.

According to another aspect of the present invention, a method of manufacturing a flexible electronic device using a flexible mother substrate includes forming a flexible substrate on a flexible mother substrate, and attaching a temporary substrate having an adhesive layer formed on one surface to the flexible substrate using the adhesive layer. And separating the flexible substrate from the flexible mother substrate, and forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother substrate.

In the method of manufacturing a flexible electronic device according to the present invention, a release layer may be further formed between the flexible substrate and the flexible mother substrate. Even if a thin peeling layer is added between the flexible substrate and the flexible mother substrate, the peeling layer also exhibits a surface roughness similar to that of the flexible mother substrate, so that the surface roughness of the separation surface of the flexible substrate can be maintained at a level similar to that of the flexible mother substrate. In this case, when the release layer is added, the flexible substrate or the flexible mother substrate may be prevented from being damaged during the separation process when a material which is not easy to separate the flexible substrate from the flexible mother substrate is used. In addition, the release layer may be composed of a composite layer laminated in multiple layers with various materials, if necessary.

In the method of manufacturing a flexible electronic device according to the present invention, a planarization layer may be further formed between the flexible substrate and the flexible mother substrate, and a planarization layer may be further formed on one side or both sides of the release layer. . Surface roughness may be controlled by the planarization layer.

Although the planarization layer is a polymer compound, the planarization layer is applied to the flexible mother substrate instead of the flexible substrate, thereby helping to maintain a lower surface roughness of the flexible substrate without affecting the temperature of the electronic device fabrication. As the planarization layer, any material capable of maintaining a low surface roughness may be used, and a polyester or a copolymer including polyester, a polyimide (PI) or a copolymer including polyimide or poly Copolymers containing polyacrylic acid or polyacrylic acid, copolymers containing polystyrene or polystyrene, copolymers containing polysulfate or polysulfite, polyamic acid or polya One or more polymers selected from the group consisting of polyacids, polyamines or copolymers containing polyamines, polyvinylalcohol (PVA), polyallylamine and polyacrylic acid It is preferable to include a compound.

In the method of manufacturing a flexible electronic device according to the present invention, in order to facilitate separation of the temporary substrate, a separation layer made of at least one thin film may be formed between the temporary substrate and the adhesive layer.

In the method of manufacturing a flexible electronic device according to the present invention, Equipment for measuring other surface roughness such as AFM (Atomic Force Microscope) or 3-D profiler which is a device for measuring the surface roughness of the surface of the flexible mother substrate on which the flexible substrate is formed When observed with a scan range of 10 μm × 10 μm using, it is preferable that 0 <R _ms <100 nm and 0 <R _{p -v} <1000 nm. If the surface roughness is out of the range, since the surface roughness of the separation surface of the flexible substrate also increases, it is difficult to realize a high quality electronic device when forming the electronic device without subsequent polishing.

In the method of manufacturing a flexible electronic device according to the present invention, the flexible mother substrate may be formed of one or more selected from the group consisting of metal and polymer material.

In the case of the metal, Fe, Ag, Au, Cu, Cr, W, Al, W, Mo, Zn, Ni, Pt, Pd, Co, In. At least one metal selected from the group consisting of Mn, Si, Ta, Ti, Sn, Zn, Pb, V, Ru, Ir, Zr, Rh, Mg, INVAR, and Stainless Use Stainless (SUS) or alloys thereof Can be.

In the case of the polymer material, a copolymer containing polyester or polyester, a copolymer containing polyimide (PI) or polyimide, a copolymer including polyacrylic acid or polyacrylic acid , Polystyrene or copolymers containing polystyrene, polysulfate or copolymers containing polysulfite, polyamic acid or copolymers comprising polyamic acid, polyamines or polyamines It may include one or more polymer compounds selected from the group consisting of a copolymer, polyvinyl alcohol (Polyvinylalcohol; PVA), polyallylamine (polyallyamine) and polyacrylic acid (polyacrylic acid).

In the method of manufacturing a flexible electronic device according to the present invention, the thickness of the flexible mother substrate is preferably 1 µm or more and 10,000 µm or less, more preferably 20 µm or more and 500 in order to ensure flexibility of the substrate required for the roll-to-roll process. May be less than or equal to μm. The surface roughness of the flexible mother substrate is 0 <R _ms <100nm, 0 <R _{p −} when observed in a scan range of 10 μm × 10 μm using AFM (Atomic Force Microscope) in consideration of the surface roughness of the flexible substrate. It is preferable that _v <1000 nm.

In the method of manufacturing a flexible electronic device according to the present invention, the flexible substrate is made of a metal.

The metal constituting the flexible substrate is Fe, Ag, Au, Cu, Cr, W, Al, W, Mo, Zn, Ni, Pt, Pd, Co, In. At least one metal selected from the group consisting of Mn, Si, Ta, Ti, Sn, Zn, Pb, V, Ru, Ir, Zr, Rh, Mg, Invar, and Stainless Use Stainless (SUS) or alloys thereof In particular, INVAR alloys can adjust the coefficient of thermal expansion to a level similar to that of inorganic semiconductors and insulators such as Si, SiO ₂ , SiN, etc., and therefore, there is no need to change the process conditions such as temperature rise rate and fall rate. It is advantageous to reduce the occurrence of cracks.

In the method for manufacturing a flexible electronic device according to the present invention, the flexible substrate may be formed by casting, electron beam deposition, thermal deposition, sputter deposition, chemical vapor deposition, or electroplating.

In the method for manufacturing a flexible electronic device according to the present invention, the flexible substrate is attached to the flexible substrate by using a temporary substrate having an adhesive layer formed on one surface thereof to separate the flexible substrate from the lower layer.

In the method of manufacturing a flexible electronic device according to the present invention, the electronic device is an organic light emitting diode (OLED), a liquid crystal display (LCD), an electrophoretic display (EPD), At least one selected from the group consisting of plasma display panel (PDP), thin-film transistor (TFT), microprocessor, random access memory (RAM), and solar cell Can be.

In the method of manufacturing a flexible electronic device according to the present invention, the adhesive layer comprises at least one material selected from the group consisting of SiO ₂ , MgO, ZrO ₂ , Al ₂ O ₃ , Ni, Al and mica and the use temperature is 450 ℃ It is preferable that it is above. In addition, the adhesive layer includes at least one polymer adhesive selected from the group consisting of epoxy, silicone and acrylic series.

In addition, the present invention provides a flexible electronic device manufactured by the method for manufacturing the flexible electronic device.

In addition, the present invention provides a flexible substrate, characterized in that after forming the flexible substrate on the flexible mother substrate using the separation surface of the flexible substrate separated from the mother substrate as the electronic device formation surface.

In the flexible substrate according to the present invention, when the surface roughness of the separation surface without polishing is observed in a scan range of 10 μm × 10 μm using AFM (Atomic Force Microscope), 0 <R _ms <100 nm, 0 < R _{p -v} <1000 nm.

The flexible substrate according to the present invention is characterized in that the metal, Fe, Ag, Au, Cu, Cr, W, Al, W, Mo, Zn, Ni, Pt, Pd, Co, In. At least one metal selected from the group consisting of Mn, Si, Ta, Ti, Sn, Zn, Pb, V, Ru, Ir, Zr, Rh, Mg, INVAR, and Stainless Use Stainless (SUS) or alloys thereof Can be. Double invar (INVAR) alloys are most preferred because they allow a very low coefficient of thermal expansion.

The flexible substrate according to the present invention is characterized in that it is formed in a thickness of 5㎛ to 500㎛.

In the flexible substrate according to the present invention, the electronic device includes an organic light emitting diode (OLED), a liquid crystal display (LCD), an electrophoretic display (EPD), a plasma display panel ( plasma display panel (PDP), thin-film transistor (TFT), microprocessor (microprocessor), RAM (Random access memory (RAM)) is characterized in that at least one selected from the group consisting of solar cells (Solar cell). .

In the flexible substrate according to the present invention, the interfacial bonding force between the flexible substrate and the lower layer is adjusted to be smaller than the yield strength of the flexible substrate, and in the separating of the flexible substrate, the flexible substrate is controlled by the physical force. It is characterized by separating from the mother substrate.

The flexible electronic device manufacturing method, the flexible electronic device, and the flexible substrate using the flexible mother substrate according to the present invention can obtain the following effects, and are expected to contribute greatly to manufacturing a high performance flexible electronic device at low cost. .

First, since the mother substrate is flexible, the deposition and peeling of the flexible substrate may be performed by a roll-to-roll process. In addition, the flexible substrate can be transported in a rolled form, and if necessary, processes such as production, transfer, and electronic device formation can be continuously performed, which is advantageous in having high production speed and economic efficiency.

Second, by continuously supplying the flexible mother board, the cleanliness and flatness of the mother board can always be maintained without surface scratches or particles, and the mother board from which the flexible substrate is removed can be repeatedly used by washing without interrupting the substrate production process. There is an advantage.

Third, since the flexible mother substrate is used, the flexible substrate is deposited as compared to the method of using a rectangular substrate such as glass or a roll-shaped mother substrate, such as a batch type process. It is possible to increase the area to be greatly increased the economic efficiency or productivity has the advantage.

Fourth, by forming the electronic device on the separation surface having almost the same surface roughness as the flexible mother substrate, it is possible to easily solve the surface roughness problem of the flexible substrate, in particular metal flexible substrate that has not been solved in the conventional flexible electronic device manufacturing method .

Fifth, since the surface roughness of the flexible substrate can be kept very low, a polymer-based flattening layer that lowers the process temperature to 350 ° C. or less is not required, which not only saves processing time and cost, but also polysilicon through a high temperature process of 450 ° C. or higher. There is an advantage to make a high-performance electronic device such as TFT.

Sixth, in the manufacture of the flexible substrate, an expensive polishing process is unnecessary, and a low yield problem due to a high defect density can be solved, thereby improving economic efficiency.

Seventh, when the material of the flexible substrate according to the present invention is an inva alloy, the thermal expansion coefficient can be adjusted to a level similar to that of inorganic semiconductors and insulators such as Si, SiO ₂ , SiN, etc. There is no need, and it is advantageous to reduce the occurrence of cracking due to the difference in thermal expansion coefficient.

Eighth, according to the method of manufacturing an electronic device using a temporary substrate for supporting a flexible substrate as an aspect of the present invention, the existing glass substrate process conditions and equipment can be used as it is without problems such as bending, conveying, and alignment of the flexible substrate. The handling can be facilitated.

Ninth, cost reduction and process simplification are possible due to the reuse of the flexible mother substrate.

1 to 5 illustrate a method of manufacturing a flexible electronic device using the flexible mother substrate according to the first embodiment of the present invention.
6 to 8 illustrate a method of manufacturing a flexible electronic device using the flexible mother substrate according to the second embodiment of the present invention.
9 to 15 illustrate a method of manufacturing a flexible electronic device using the flexible mother substrate according to the third embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The terms or words used in the foregoing specification and claims are not to be construed in the ordinary and dictionary sense, and the inventors may appropriately define the concept of terms in order to best describe their own invention. Based on the principle, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only preferred embodiments of the present invention, and do not represent all of the technical idea of the present invention, various equivalents that may be substituted for them at the time of the present application There may be modified examples and the scope of the present invention is not limited to the embodiments described below.

In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art, and the size or thickness of the films or regions in the drawings is exaggerated for clarity of specification. .

[First Embodiment]

1 to 5 schematically illustrate a method of manufacturing a flexible electronic device using the flexible mother substrate according to the first embodiment of the present invention.

1 to 5, the manufacturing method of the flexible electronic device using the flexible mother substrate according to the first embodiment of the present invention is largely through a draw roll from the mother substrate supply roll on which the flexible mother substrate 100 is wound. The flexible mother substrate 100 is withdrawn, and a thin metal film to be used as the flexible substrate 200 is deposited on the extracted flexible mother substrate 100 to form the flexible substrate 200 on the flexible mother substrate 100 (FIG. A1 of FIG. 1 and FIG. 2), separating the flexible substrate 200 from the flexible mother substrate 100 through a separation roll which rotates in engagement with the drawing roll to manufacture the flexible substrate 200 (B1 of FIG. 1 and FIG. 3). 1 and 4) and forming the electronic device 300 and the encapsulation layer 400 on the separated surface of the separated flexible substrate 200 (FIG. 5).

In the first embodiment of the present invention, as the flexible mother substrate 100, a Fe alloy sheet containing Ni, Mo, and Cr having a surface roughness of Rms <4 nm and Rp-v <30 nm having a thickness of 100 um was used. After forming the flexible substrate 200 with the INVAR 30 through the plating method, after separating and washing and drying the Fe alloy and the INVAR, the flexible substrate 200 was wound on the winding roll for the flexible substrate.

Next, an OLED device (C1 in FIG. 1) was formed on the separation surface of the flexible substrate 200 separated from the flexible mother substrate 100. In the OLED device, after forming a pattern using a photoresist, 100 nm of Ag and a reflective electrode were formed on a Cu flexible substrate, and a hole injection layer was formed of CuO with a thickness of 1 nm, and 70 nm thickness was formed on the hole injection layer. NPD was formed as a hole transporting layer, Alq ₃ was formed as a light emitting layer with a thickness of 40 nm on the hole transporting layer, a BCP hole blocking layer was formed with a 5 nm thickness on the light emitting layer, and Alq ₃ was formed as a 20 nm thick on the hole blocking layer. A flexible OLED was manufactured by forming an electron transport layer and forming Al as a transparent electrode on a thickness of 10 nm on the electron transport layer.

When the OLED having the same structure was manufactured using the glass substrate as the comparative group, the OLED and the two substrates using the flexible substrate 200 obtained similar electrical and optical results, and the difference due to the surface roughness could not be confirmed. In addition, even after separation of the flexible substrate 200 from the Fe alloy flexible mother substrate 100, only surface roughness changes were observed before and after separation, and surface roughness changes were not observed even after repeated INVAR flexible substrate production. .

The thickness of the flexible mother substrate may be 1 or more and 5,000 or less in consideration of the flexibility of the substrate. It may vary depending on the size and is preferably 50 or more and 2,000 or less.

In the present invention in which a large area continuous process is performed, it is very important to apply a technology capable of reducing defects of the flexible substrate 200 caused by damage to the flexible mother substrate 100 in order to make a reliable flexible substrate 200. Do. In particular, the level at which the surface roughness of the required flexible mother substrate 100 is to be maintained is incomparably high compared to the level allowed by the conventional plating technology. In the prior art using a roll-shaped mother substrate, the surface roughness of the mother substrate is in the range of 5 um to 10 um, and even when lowering the surface roughness by industrial needs, more than 1 um is allowed. However, in the present invention, surface roughness (Rms) of extremely low surface roughness of 100 nm or less, more preferably 50 nm for a solar cell and 4 nm or less for an organic electronic device should be maintained. In addition to the required surface roughness, the defect density is also very different from the prior art and the present invention. Conventional plating techniques are mainly used for flexible circuit boards, but the surface roughness is allowed to be high in the area of a mobile device. In contrast, the field of display, lighting, and solar cells to which the present invention is applied is required to have a large area of 40 to 50 inches or more, so that the surface roughness must be maintained at an extremely low level with a defect density of 10 ^-5 or less per cm ² . Accordingly, in order to maintain the surface roughness after separating the flexible substrate from the flexible mother substrate, and to maintain the surface roughness even in repeated use, a technical solution differentiated in the prior art is required.

Specifically, when the flexible mother substrate 100 is damaged by corrosion, scratches, inclusions, and the like and the surface roughness is increased, the roughness of the separated surface of the flexible substrate 200 is also increased. As a result, problems such as a short circuit and an increase in leakage current of the electronic device 300 formed on the separation surface occur. The resulting decrease in yield leads to exponentially rising costs in proportion to the cost of producing the defective product. That is, damage to the flexible mother substrate 100 causes problems not only in the flexible mother substrate 100 but also in the flexible substrate 200 and the electronic device 300.

As a method for solving such a problem, there is a method of forming a separate layer on the flexible mother substrate 100 repeatedly when forming the flexible substrate, but there is a disadvantage in that an additional layer is attached to the flexible substrate at an additional cost. Another method is to polish the damaged flexible mother substrate, but it takes time and money to polish a large area of the flexible mother substrate in the form of a long sheet. In particular, the polishing of a thin sheet of thin flexible mother substrate is more difficult than the so-called buffing of a roll-shaped mother substrate in circular motion.

The present invention provides a method for maintaining surface roughness of 100 nm or less. In a specific manner, the flexible mother substrate 100 is preferably a cathode having conductivity and corrosion resistance. The main causes of the surface damage of the roll-shaped mother substrate 100 are corrosion by acid plating solution of Ph 2 ~ 3, corrosion by water during cleaning process, nonuniform surface oxidation in air, and glass substrates used in existing electronic device processes. In order to have the required level of substrate cleanliness, the substrate material must be corrosion resistant so that the substrate is not damaged under the flexible substrate manufacturing process environment of the metal material. Any material may be used as long as the mother substrate material is a metal having corrosion resistance, but a metal substrate having a single composition is preferable as the conductive cathode. In the case of a mother substrate composed of multiple layers, damage to the mother substrate may occur due to delamination. As the mother substrate material, it may be an alloy containing Fe, Ni, Mo, Cr, or the like, or an alloy made of Ti alloy, or Cu, Ni, Al, Mo, Cr, or the like.

Cleaning and further surface treatment of the flexible mother substrate 100 having corrosion resistance provide a stable passivation coating of 1 nm to 100 nm, more generally 1 nm to 20 nm, on the surface of the mother substrate. Since the above-described thickness is 100 nm or less, which is the surface roughness of the required flexible substrate, it serves to increase corrosion resistance without significantly affecting the surface roughness. The roll-shaped mother substrate is immersed in an acidic or basic plating solution for more than 1000 to 5000 hours, but the flexible mother substrate is immersed in the plating bath for only a short time while forming the flexible substrate in the plating solution. Corrosion resistance can be maintained. The passive film having a thickness of several tens to several tens of nm formed on the flexible mother substrate 100 is in a range that does not significantly affect the electrical conduction for plating. The flexible mother substrate may plate a larger area than the roll-shaped mother substrate, but since the thickness is limited and high conductivity is preferable as compared with the roll-shaped mother substrate, the thickness of the passivation film is preferably limited. In addition, the passivation film serves to adjust the bonding force to facilitate the interface separation between the flexible mother substrate 100 and the flexible substrate 200 is preferable for the manufacture of the flexible substrate 200 of the metal material.

The naturally occurring passivation film may be formed non-uniformly on the flexible mother substrate. In the unstable structure or thickness of the passivation film, hydroxides are formed due to hydrogen gas infiltration, or metal chlorides are formed under high chlorine ion concentrations, thereby damaging the flexible mother substrate by corrosion. Therefore, in consideration of the required surface roughness and defect density of the present invention, it is preferable that the flexible mother substrate is formed of a uniform and excellent quality passivation film on the surface by artificial oxidation or nitriding rather than a naturally occurring passivation film. . The surface treatment of the flexible mother substrate 100 may be any method as long as it can form a passivation film on the surface of the mother substrate 100 through oxidation or nitriding. However, at least one gas of atmospheric, oxygen, or nitrogen may be formed on the surface of the flexible mother substrate. It can be formed by irradiating ultraviolet rays, lasers, electron beams, or plasma treatment in the atmosphere. This passivation coating protects the flexible mother substrate from damage by an acidic plating solution or a basic plating solution.

For the above reason, in the first embodiment of the present invention, as the mother substrate 100, a Fe alloy sheet containing Ni, Mo, Cr having a thickness of 100 nm having a surface roughness of Rms <4 nm and Rp-v <30 nm is used. In addition, no significant surface roughness change was observed even when the flexible substrate was manufactured under high corrosive environment, and it could be reused as a mother substrate without repeated polishing or additional layer deposition.

[Second Embodiment]

In the second embodiment of the present invention, the flexible mother substrate 100 includes a mother substrate having a Pt protective layer having a thickness of 100 nm and a protective layer of Ti having a surface roughness of Rms˜4 nm and Rp−v <30 nm. Cu sheet having a thickness of 100 was used, and the flexible substrate 200 was formed with INVAR 30 by electroplating. After separating and washing and drying Pt or Ti and INVAR, the INVAR was flexible on the winding roll for the flexible substrate. The substrate 200 was wound up.

In the first embodiment of the present invention, the flexible mother substrate 100 is a mother substrate having a Pt protective layer and a mother substrate having a Ti protective layer, and the surface roughness is 100 nm having Rms <4 nm and Rp-v <30 nm. Cu sheet having a thickness was used. Ultrasonic cleaning was carried out for 5 minutes, each soaked in acetone, isopropane alcohol, and deionized purified water. The residual purified water remaining on the surface was blown with nitrogen and then removed by heating to 150 ° C. for 1 minute. In addition, UVO treatment was performed for 10 minutes to remove impurities not removed from the surface. As the protective layer 110, 50 nm and 500 nm of Ti and Pt were deposited by Ar gas ion-beam assisted electron-beam deposition. Next, an O ₂ plasma treatment was performed on the Ti and Pt surfaces for 1 minute.

Next, an OLED device (C1 in FIG. 1) was formed on the separation surface of the flexible substrate 200 separated from the flexible mother substrate 100. In the OLED device, after forming a pattern using a photoresist, 100 nm of Ag and a reflective electrode were formed on a Cu flexible substrate, and a hole injection layer was formed of CuO with a thickness of 1 nm, and a-NPD hole was formed with a thickness of 70 nm on the hole injection layer. It was formed as a transport layer, on the hole transport layer Alq ₃ was formed as a light emitting layer 40nm thick, on the light emitting layer was formed a BCP hole blocking layer 5nm thickness, Alq ₃ was formed as an electron transport layer 20nm thickness on the hole blocking layer, A flexible OLED could be manufactured by forming Al as a transparent electrode on the electron transport layer with a thickness of 10 nm.

In Embodiment 2 of the present invention, a protective mother layer 500 of the flexible mother substrate is disclosed as a technique capable of reducing the defects of the flexible metal substrate 100 and managing the flexible mother substrate 200 in a large area continuous process. .

In the prior art, the phosphate or chromate coating agent used to protect the surface of the cathode is used, but it is not suitable as the protective layer material of the present invention which requires an extremely flat surface roughness because the surface is roughened through chemical reaction with the mother substrate surface. not.

As the protective layer 500 material, any material may be used as long as it is a metal having corrosion resistance, but it is preferable to include at least one selected from the group consisting of noble metals Au, Pt, Ir, Pd, Os, Rh, Ru, and oxides thereof. . Further, any material may be used as long as it is a material having corrosion resistance such as at least one selected from the group consisting of oxides or nitrides of Mo, Ni, Cr, Ti, Fe, Al, B, C. The thickness of the protective layer 500 may be 1 nm or more and 1000 nm or less, and more preferably 10 nm or more and 100 nm or less. The reason for limiting the thickness of the protective layer is the same as the reason for limiting the thickness of the passivation film described in Example 1. In the case of general thin film deposition, there is a difference in the height of the film of about 3 to 10%, although there are differences depending on the equipment and the deposition method. When forming the protective layer in um, the increase of surface roughness by forming the protective layer becomes a problem. Especially, in the case of high hardness such as oxide and nitride, in order to satisfy the required surface roughness (Rms, Rp-v), additional polishing, etc. Work is also difficult. In addition, the thick passivation film present on the flexible mother substrate that needs flexibility during the roll-to-roll process may be weak in a small radius of curvature, causing cracking or peeling.

In the case of the protective layer 500 / flexible mother substrate 100 structure (FIG. 6) or the multilayers, a problem of increasing roughness of the flexible substrate 200 may occur due to uneven interlayer separation. In addition, the interface may be separated between the protective layer and the mother substrate so that the protective layer may be transferred to the flexible substrate 200. When the interface between the flexible mother substrate 100 and the protective layer 110 is separated, the protective layer 110 must be repeatedly formed on the mother substrate 100 whenever the flexible metal substrate 200 is manufactured. Repeated protective layer formation leads to an increase in material cost and production cost, and there is a problem in that it is necessary to repeatedly perform vacuum deposition, which is not particularly suitable for mass production of roll to roll.

This will be described in more detail in comparison with the existing plating process using the plated base layer as follows.

That is, referring to Figure 8, in the existing plating process, after the chromate or phosphate coating treatment to prevent damage to the substrate, Cr, Ti, commonly used as the plated base layer 210 to increase the interfacial bond between the substrate and the plating layer, Ni and the like are used, and the plating base layer 210 is separated together on the plating layer by separating the substrate and the plating base layer interface. However, chromate or phosphate has a problem of greatly increasing the surface roughness, making it unsuitable for making a flat flexible metal substrate. More specifically, materials such as Cr, Ti, and Ni, which are commonly used as the plated base layer 210 to increase the interfacial bonding force, may increase the interfacial bonding force between the two layers, but the moisture remaining in the vacuum chamber during vacuum deposition is increased. And degeneration, such as oxidation, to the atomic layer of water deposited on the lower substrate by acting as a getter of the noxious gas. Therefore, when the plating base layer and the plating layer deposited on the mother substrate are separated under general deposition conditions and vacuum chamber states, the bottom substrate and the plating base layer are separated. In contrast, the present invention, despite the production of a repeatable flexible metal substrate by using possible methods such as heating of the vacuum chamber and maintaining a high vacuum so that the protective layer material is not oxidized when the protective layer is deposited on the mother substrate, The protective layer is stably attached to the mother substrate, and the protective layer and the flexible metal substrate can be separated.

In addition, according to the existing plating process, there is a problem that the warpage of the substrate during the heating of the substrate and the leakage current of the electronic device increases due to the difference in coefficient of thermal expansion between the plating layer and the underlying plate layer. In addition, Au, Ag, etc. as a plating base layer 210 to increase the required conductivity as an electrode in the plating process, there is a problem of making a non-uniform surface by agglomeration at high temperature, Cu is easily oxidized, There is a problem of surface roughness increase due to unstable oxide film. Therefore, a technique of fabricating the flexible metal substrate 200 having a single composition in which only the separation between the protective layer and the flexible metal substrate is selectively separated by increasing the interfacial bonding force between the protective layer and the mother substrate is very important.

The present invention is a method for increasing the interfacial bonding force between the mother substrate 100 and the protective layer 110 by plasma treatment of the surface of the mother substrate on which the protective layer 110 is to be formed or by irradiating UV on the surface of the mother substrate. Can be done. In addition, before the protective layer forming step, in order to increase the interfacial bonding force between the flexible mother substrate and the protective layer and prevent separation, when the interfacial bonding force between the flexible mother substrate 100 and the protective layer material is weak, Mo, Ni, Cr, It is preferable to additionally use a bonding layer material such as Ti and Fe.

In addition, during the formation of the protective layer 110, the mother substrate 100 may be heated to 100 ° C. or more and 800 ° C. or less so that the protective layer material may be deposited on the mother substrate 100 with high bonding strength. As the deposition method, sputtering or electron beam deposition or ion plating method in which the energy of the deposited material is relatively high is preferable to the thermal deposition method. A more preferable method for increasing the interfacial bonding force between the mother substrate 100 and the protective layer 110 is to perform ion-beam assisted deposition during protective layer deposition. By combining the above-described method, when the flexible metal substrate 200 is separated from the protective layer 110, the interface between the protective layer 110 and the flexible metal substrate 200 on the mother substrate 100 may be stably separated. Accordingly, the present technology has an advantage of obtaining a single flexible metal substrate 200 having a specific thermal expansion coefficient required for an electronic device structure and a manufacturing process. Since the flexible metal substrate 200 having a single composition does not warp the substrate in a high temperature process of heating at least 150 ° C. compared with the multilayer flexible metal substrate having different compositions, it is easy to align and transport the substrate and prevent cracking of the electronic device. There is an effect such as.

Next, a copper plate having a Pt or Ti protective layer on the surface is immersed in a Fe-Ni plating solution consisting of iron sulfate and nickel sulfamate, and the INVAR, which is the flexible metal substrate 200, is formed on the mother substrate 100 by an electroplating method. At 100 μm thick without a separate layer. Fe-38% Ni composition of the INVAR substrate was controlled by the current density, the ratio of iron sulfate and nickel sulfamate, the distance between electrodes, stirring speed, and additives. After the INVAR was formed to a predetermined thickness, deionized purified water was flowed for 5 minutes to remove the plating liquid remaining on the stainless steel and the INVAR surface. The residual purified water remaining on the surface was blown with nitrogen and then removed by heating to 150 ° C. for 1 minute.

Next, the Pt protective layer formed on the copper plate and the INVAR substrate may be physically separated to obtain a flexible INVAR substrate having a flat surface having a roughness similar to that of the flexible mother substrate 100. The surface roughness of the INVAR substrate was measured to have a roughness of 4 nm similar to that of the copper plate within the error range of the measuring equipment and the measuring method. In the flexible mother substrate 100 and the protective layer 500 used in the second embodiment of the present invention, no significant surface roughness change was observed even when fabricating the flexible metal substrate repeatedly. The plate 100 could be reused.

In the present invention, the separation of the protective layer on the flexible mother substrate 100 and the flexible metal substrate 200 may be any method as long as the interface between the two layers is stably separated. In the first embodiment of the present invention, the interface bonding force between the flexible substrate 200 and the protective layer 500 on the flexible mother substrate 100 is adjusted to be smaller than the yield strength of the flexible substrate 200, and the flexible substrate 200 In the separating step, the flexible substrate 200 was physically peeled from the protective layer 500 on the flexible mother substrate 100 through a physical force. When using a physical peeling method does not need a separate layer, there is an advantage that the separation process can be performed by a simple method.

In addition, in the manufacturing method of the flexible metal substrate according to the present invention, it is preferable to use a plating solution containing an organic compound release agent component for separation of the flexible mother substrate 100 and the flexible substrate 200. When the chromate or phosphate release agent, which is widely used in the existing plating process, is used, a rough film is formed on the surface of the flexible mother substrate, so that the surface roughness of the flexible substrate separated from the flexible mother substrate becomes very high, which is not suitable for making a flat flexible substrate. Therefore, it is preferable that the plating solution contains an organic compound or an organic metal compound that does not affect the surface roughness of the flexible mother substrate 100 but facilitates separation between the flexible mother substrate 100 and the flexible metal substrate 200. Do. In the second embodiment of the present invention, it is easy to separate from the mother substrate 100 by controlling the internal stress, the grains, the mother substrate and the bonding force of INVAR, the flexible substrate 200 plated using saccharin and sodium citrate.

Next, the INVAR substrate was annealed, annealed, in a nitrogen atmosphere at 700 ° C. for 30 minutes. The INVAR substrate formed by the plating method was very small in grain size and had internal stress, so that when the electronic device having a heating process without annealing was fabricated on top, the recrystallization process proceeded, causing cracking and bending of the electronic device. Annealed INVAR substrates with a composition of about 38% Ni have a coefficient of thermal expansion that is most similar to TFTs made of glass, silicon and silicon oxide, and are most desirable to minimize problems due to differences in coefficients of thermal expansion even in repeated high temperature processes. By removing the plated base layer 210 weak to the above-described heat from the flexible metal substrate, a flat flexible metal substrate that can be used even at a high temperature can be obtained. Au, Ag, etc., formed on one surface of the INVAR substrate as the plated base layer 210, had a problem that the surface roughness was very high due to a forceps phenomenon due to heat treatment.

Next, an OLED device 300 was formed on a separation surface of INVAR, which is a flexible metal substrate 200 separated from a copper plate, which is a flexible mother substrate 100. The OLED device forms a pattern using a photoresist and forms a hole injection with CuO having a thickness of 1 nm using Ag as a reflective substrate, and a-NPD is formed with a hole transporting layer having a thickness of 70 nm on the hole injection layer. On the hole transport layer, Alq ₃ is formed as a light emitting layer with a thickness of 40 nm, a hole blocking layer is formed with BCP at a thickness of 5 nm on the light emitting layer, Alq ₃ is formed as an electron transporting layer with a thickness of 20 nm on the hole blocking layer, After forming Al as a transparent electrode on the electron transport layer with a thickness of 10 nm, a flexible OLED was manufactured by bonding a thermosetting epoxy film coated with a moisture barrier layer, which is a protective layer 400.

In the present invention, the electronic device 300 includes an organic light emitting display (OLED), a solar cell, a liquid crystal display (LCD), and an electrophoretic display (EPD). ), An electronic device that requires a flat substrate such as a plasma display panel (PDP), a thin-film transistor (TFT), a microprocessor, and a random access memory (RAM). .

[Third Embodiment]

9 to 15, in the third embodiment of the present invention, unlike the first embodiment, the temporary substrate 600 is attached to the flexible substrate 200 by the adhesive layer 700, thereby providing a flexible substrate having a low surface roughness. 200) was prepared.

More specifically, the third embodiment of the present invention is to form a flexible substrate 200 on the flexible mother substrate 100 supplied through a roll-to-roll process (see A2 of FIG. 9, FIG. 10), Attaching the temporary substrate 600 on which the adhesive layer 700 is formed on the flexible substrate 200 using the adhesive layer 700 (see B2, C2, D2, FIG. 11, FIG. 12, and FIG. 13 of FIG. 9), Separating the flexible substrate 200 from the flexible mother substrate 100 (see E2 and FIG. 14 of FIG. 9) and the separation of the flexible substrate 200 in contact with the flexible mother substrate 100. 300) (see FIG. 15).

The polyimide film having a thickness of 100, that is, the adhesive layer 700 is coated, that is, the temporary substrate 600 is bonded to the flexible substrate 200 using the adhesive layer 700. Subsequently, the flexible substrate 200 was wound on a winding roll for the flexible substrate by separating the flexible substrate from the flexible substrate using the polyimide film, that is, the temporary substrate 600 as a support substrate.

In the third embodiment of the present invention, unlike the first embodiment, Cu is plated with the flexible metal substrate 200 to be applied when a high temperature process is not required and a substrate having high heat dissipation is required. Since the low temperature process is used, unlike the first embodiment, the heat treatment process of the flexible metal substrate is omitted, and in order to prevent oxidation and insulation of the Cu substrate, SiO ₂ 1 μm is deposited after peeling from the mother substrate and the same as in the first embodiment. OLED device was manufactured. If a high temperature is not required, the material of the flexible metal substrate is not particularly limited, but a thickness of 5 μm or more is required so that the flexible metal substrate does not tear in a general handling process, and a thickness of 500 μm or less in which the flexibility of the metal substrate is maintained is preferable. .

100: flexible mother board
200: flexible substrate
210: unplated layer
300: electronic device
400: encapsulation layer
500: protective layer
600: temporary substrate
700: adhesive layer

Claims (54)

In the method of manufacturing a flexible electronic device using a flexible mother substrate,
(a) forming a flexible substrate on the flexible mother substrate;
(b) separating the flexible substrate from the flexible mother substrate; And
(c) forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother board, comprising: manufacturing a flexible electronic device using the flexible mother board. In the method of manufacturing a flexible electronic device using a flexible mother substrate,
The flexible mother substrate is a conductive negative electrode having corrosion resistance to the acid plating solution or basic plating solution,
(a) forming a flexible substrate on the flexible mother substrate;
(b) separating the flexible substrate from the flexible mother substrate; And
(c) forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother board, comprising: manufacturing a flexible electronic device using the flexible mother board. In the method of manufacturing a flexible electronic device using a flexible mother substrate,
(a) forming a protective layer having corrosion resistance to an acidic plating solution or a basic plating solution on the flexible mother substrate;
(b) forming a flexible substrate on the protective layer;
(c) separating the flexible substrate from the flexible mother substrate; And
(d) forming an electronic device on a separation surface of the flexible substrate that has been in contact with the flexible mother board, comprising: manufacturing a flexible electronic device using the flexible mother board. 3. The method according to claim 1 or 2,
The step (a)
(a1) extracting the flexible mother substrate from the mother substrate supply roll on which the flexible mother substrate is wound through a drawing roll; And
(a2) forming a thin metal film to be used as the flexible substrate on the flexible mother substrate to be drawn out;
In the step (b), characterized in that to separate the flexible substrate from the flexible mother substrate through a separation roll that rotates in engagement with the draw roll, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The step (b)
(b1) extracting the flexible mother substrate from the mother substrate supply roll on which the flexible mother substrate is wound through a drawing roll; And
(b2) forming a thin metal film to be used as the flexible substrate on the extracted flexible mother substrate;
In the step (c), the flexible substrate using the flexible mother substrate, characterized in that for separating the flexible substrate from the flexible mother substrate through a separation roll that rotates in engagement with the extraction roll. The method according to any one of claims 1 to 3,
A method for manufacturing a flexible electronic device using a flexible mother substrate, characterized in that to form a flexible substrate on both sides of the flexible mother substrate. The method according to any one of claims 1 to 3,
The flexible mother substrate has a thickness of 1 μm or more and 5,000 μm or less, the method of manufacturing a flexible electronic device using the flexible mother substrate. The method according to any one of claims 1 to 3,
The thickness of the flexible mother substrate is 50㎛ 2,000㎛, The manufacturing method of a flexible electronic device using a flexible mother substrate. The method of claim 1,
The flexible mother substrate is a method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that made of a polymeric material. The method according to any one of claims 1 to 3,
The flexible mother substrate is a Fe alloy containing at least one of Ni, Mo, Cr, characterized in that the manufacturing method of a flexible electronic device using a flexible mother substrate. The method according to any one of claims 1 to 3,
The flexible mother substrate is Ti or Ti alloy, characterized in that the manufacturing method of the flexible electronic device using the flexible mother substrate. The method according to any one of claims 1 to 3,
The flexible mother substrate comprises at least one of Cu, Ni, Al, Mo, Cr, the manufacturing method of a flexible electronic device using a flexible mother substrate. 3. The method according to claim 1 or 2,
The surface roughness of the surface of the flexible mother substrate on which the flexible substrate is formed is 0 <R _ms <100 nm and 0 <R _pv <1000 when observed in a scan range of 10 μm × 10 μm using AFM (Atomic Force Microscope). A method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that it is adjusted to nm. The method of claim 13,
The flexible mother substrate is separated from the flexible substrate after the surface roughness is maintained, characterized in that the manufacturing method of the flexible electronic device using the flexible mother substrate. 3. The method according to claim 1 or 2,
The flexible mother substrate can be reused in the flexible substrate forming step without being repeatedly polished after being separated from the flexible substrate, a flexible electronic substrate manufacturing method using a flexible mother substrate. 3. The method according to claim 1 or 2,
The flexible mother substrate is separated from the flexible substrate and can be reused in the flexible substrate forming step without repetitive film formation, characterized in that the flexible electronic substrate manufacturing method using a flexible mother substrate. The method of claim 3, wherein
Surface roughness of the surface of the protective layer formed on the flexible mother substrate is 0 <R _ms <100 nm, 0 <R _{p -v} <when observed in a scan range of 10 ㎛ × 10 ㎛ using AFM (Atomic Force Microscope) A method for manufacturing a flexible electronic device using a flexible mother substrate, characterized in that it is adjusted to 1000 nm. The method of claim 17,
The protective layer formed on the flexible mother substrate is characterized in that the surface roughness is maintained after being separated from the flexible substrate, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The flexible mother substrate having the protective layer is formed, after being separated from the flexible substrate can be reused in the flexible substrate forming step without repeated polishing, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The flexible mother substrate having the protective layer is formed, after being separated from the flexible substrate can be reused in the flexible substrate forming step without repeated deposition, the method of manufacturing a flexible electronic device using a flexible mother substrate. 3. The method according to claim 1 or 2,
A method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that the flexible mother substrate is oxidized or nitrided to form a passive film on its surface. 3. The method according to claim 1 or 2,
The passivation film on the flexible mother substrate is formed by irradiating ultraviolet rays, lasers, electron beams or plasma treatment on the surface of the flexible mother substrate in at least one gas atmosphere of air, oxygen, or nitrogen. Method of manufacturing an electronic device. 3. The method according to claim 1 or 2,
The thickness of the passivation film formed on the surface of the flexible mother substrate is 1 nm or more and 20 nm or less, characterized in that the manufacturing method of the flexible electronic device using the flexible mother substrate. 3. The method according to claim 1 or 2,
The thickness of the passivation film formed on the surface of the flexible mother substrate is 1 nm or more and 100 nm or less, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method according to any one of claims 1 to 3,
A protective layer having corrosion resistance to an acidic plating solution or a basic plating solution is further formed on the flexible mother substrate, the method of manufacturing a flexible electronic device using the flexible mother substrate. The method of claim 3, wherein
Before the protective layer forming step, in order to prevent separation of the flexible mother substrate and the protective layer, the surface of the flexible mother substrate on which the protective layer is to be formed is subjected to plasma treatment or UV irradiation on the surface of the mother substrate. A method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that. The method of claim 3, wherein
Before the protective layer forming step, in order to prevent separation of the flexible mother substrate and the protective layer, characterized in that using a bonding layer containing at least one of Mo, Ni, Cr, Ti, Fe, flexible mosquito Method for manufacturing a flexible electronic device using a plate. The method of claim 3, wherein
In the forming of the protective layer, in order to prevent separation of the flexible mother substrate and the protective layer, the protective mother layer is formed using a sputtering method, an electron beam deposition method or an ion plating method, the flexible mother substrate Method for manufacturing a flexible electronic device using. The method of claim 3, wherein
The protective layer forming step, characterized in that to irradiate an ion beam to the protective layer being formed to prevent separation of the flexible mother substrate and the protective layer, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
In the forming of the protective layer, in order to prevent the separation of the flexible mother substrate and the protective layer, characterized in that for heating the flexible mother substrate to more than 100 ℃ 800 ℃, manufacturing a flexible electronic device using a flexible mother substrate Way. The method of claim 3, wherein
The protective layer is characterized in that it comprises at least one selected from the group consisting of Au, Pt, Ir, Pd, Os, Rh, Ru and oxides thereof, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The protective layer is Mo, Ni, Cr, Ti, Fe, Al, B, C, characterized in that it comprises at least one selected from the group consisting of oxides, nitrides, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The protective layer has a thickness of 1 nm or more and 1000 nm or less, a method for manufacturing a flexible electronic device using a flexible mother substrate. The method of claim 3, wherein
The protective layer has a thickness of 10 nm or more and 100 nm or less, a method of manufacturing a flexible electronic device using a flexible mother substrate. The method according to any one of claims 1 to 3,
The flexible mother substrate is characterized in that the surface roughness is controlled by the planarization layer, a method of manufacturing a flexible electronic device using a flexible mother substrate. 36. The method of claim 35,
The planarization layer is a method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that the polymer compound. 36. The method of claim 35,
The planarization layer may be a polyester or a copolymer including polyester, a polyimide (PI) or a copolymer including polyimide, a polyacrylic acid or a copolymer including polyacrylic acid, polystyrene (polystyrene) or copolymers containing polystyrene, polysulfate or copolymers containing polysulfite, polyamic acid or copolymers containing polyamic acid, polyamine or polyamine Flexible copolymer, characterized in that it comprises at least one polymer compound selected from the group consisting of polyvinyl alcohol (Polyvinylalcohol; PVA), polyallylamine (polyallyamine) and polyacrylic acid (polyacrylic acid) Method of manufacturing an electronic device. The method according to any one of claims 1 to 3,
The interfacial bonding force between the flexible substrate and the lower layer is adjusted to be smaller than the yield strength of the flexible substrate, and in the separating of the flexible substrate, the flexible substrate is separated from the flexible mother substrate through physical force. And a method of manufacturing a flexible electronic device using a flexible mother substrate. The method according to any one of claims 1 to 3,
The thickness of the flexible substrate is 5 ㎛ or more, 500 ㎛ or less, characterized in that the flexible electronic substrate manufacturing method using a flexible mother substrate. 40. The method of claim 39,
The flexible substrate is Fe, Ag, Au, Cu, Cr, W, Al, W, Mo, Zn, Ni, Pt, Pd, Co, In. Flexible mother substrate, characterized in that at least one metal selected from the group consisting of Mn, Si, Ta, Ti, Sn, Zn, Pb, V, Ru, Ir, Zr, Rh, Mg, INVAR and stainless steel Method of manufacturing a flexible electronic device. The method of claim 1,
The flexible substrate may be formed by at least one of a casting method, an electron beam deposition method, a thermal vapor deposition method, a sputter deposition method, a chemical vapor deposition method or an electroplating method, a method of manufacturing a flexible electronic device using a flexible mother substrate. 4. The method according to claim 2 or 3,
The flexible substrate is a method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that formed by electroplating. The method according to any one of claims 1 to 3,
A method of manufacturing a flexible electronic device using a flexible mother substrate, characterized in that the flexible substrate and the lower layer is separated by attaching the flexible substrate using a temporary substrate having an adhesive layer formed on one surface thereof. The method according to any one of claims 1 to 3,
The electronic device may be an organic light emitting diode (OLED), a liquid crystal display (LCD), an electrophoretic display (EPD), a plasma display panel (PDP), a thin film transistor. (thin-film transistor: TFT), microprocessor (microprocessor), random access memory (RAM), solar cell (Solar cell), characterized in that at least one selected from the group consisting of, flexible electronic substrate using a flexible mother substrate Manufacturing method. The flexible electronic device manufactured by the method in any one of Claims 1-3. The flexible substrate which uses the isolation surface of the said flexible substrate separated from the said flexible mother substrate after forming a flexible substrate on the flexible mother substrate by the method of Claim 1 as an electronic element formation surface. The flexible substrate which uses the isolation surface of the said flexible substrate separated from the said flexible mother substrate after forming a flexible substrate on the flexible mother substrate by the method of Claim 2 as an electronic element formation surface. The flexible substrate which uses the isolation surface of the said flexible substrate separated from the said flexible mother substrate after forming a flexible substrate on the protective layer by the method of Claim 3 as an electronic element formation surface. 49. The method according to any one of claims 46 to 48,
When the surface roughness of the separation surface without polishing is observed in a scan range of 10 μm × 10 μm using AFM (Atomic Force Microscope), 0 <R _ms <100 nm, 0 <R _{p -v} <1000 nm A flexible substrate, characterized in that being adjusted. 49. The method according to any one of claims 46 to 48,
The flexible substrate, characterized in that formed in a thickness of 5㎛ 500㎛, flexible substrate. 49. The method according to any one of claims 46 to 48,
The flexible substrate, characterized in that made of a metal. 52. The method of claim 51,
And said metal is an invar (INVAR) alloy or stainless steel. 49. The method according to any one of claims 46 to 48,
The electronic device may be an organic light emitting diode (OLED), a liquid crystal display (LCD), an electrophoretic display (EPD), a plasma display panel (PDP), a thin film transistor. (Thin-film transistor: TFT), microprocessor (microprocessor), random access memory (RAM), a solar cell (Solar cell), characterized in that at least one selected from the group consisting of, a flexible substrate. 49. The method according to any one of claims 46 to 48,
The interfacial bonding force between the flexible substrate and the lower layer is adjusted to be smaller than the yield strength of the flexible substrate, and in the separating of the flexible substrate, the flexible substrate is separated from the flexible mother substrate through physical force. , Flexible substrate.

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