KR101177580B1 - Organic electro-luminescence display device and method for fabricating of the same - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, wherein thin film transistors and organic light emitting diode elements are formed on different substrates, and then bonded to each other to increase productivity and production cost. It is possible to provide an organic light emitting display device having an improved reliability by forming a film to prevent corrosion of the pad portion.

Dual panel, organic electroluminescent display, pad part, corrosion

Description

Organic electroluminescent display device and method for manufacturing same {Organic electro-luminescence display device and method for fabricating of the same}

1 is a schematic cross-sectional view of a conventional organic light emitting display device.

2 is a schematic view of a plane of an organic light emitting display device according to a first embodiment of the present invention.

3 is a cross-sectional view illustrating a portion of the organic light emitting display device of FIG. 2.

4A through 4F are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a second exemplary embodiment of the present invention.

5A through 5D are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a third exemplary embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

 100, 400: first substrate 110, 410: gate pad portion

 120, 420: data pad portion 123, 423: data pad link portion

 124, 424: link wiring 200, 500: second substrate

 210, 510: first electrode 220, 520: organic light emitting layer

 230, 530: second electrode 300, 600: sealant pattern

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent display, and more particularly, to a dual panel type organic electroluminescent display and a method of manufacturing the same which can ensure reliability.

The organic light emitting display device uses light through electrons and holes to form electron-hole pairs in a semiconductor, or carriers are excited to a higher energy state and then fall back to a stabilized ground state. This phenomenon is used.

As such, since the organic light emitting display device is a self-luminous type, a backlight is not required like a liquid crystal display device, and thus, a light weight can be achieved. In addition, it has advantages such as low voltage driving, high luminous efficiency, wide viewing angle and fast response speed, which is advantageous to realize high quality video.

In particular, unlike the liquid crystal display device or the plasma display panel (PDP), all of the deposition and encapsulation equipments are manufactured in the manufacturing process of the organic light emitting display device.

In addition, when the organic light emitting display device is driven by an active matrix method having a thin film transistor which is a switching element for each pixel, the same luminance is displayed even when a low current is applied, and thus, low power consumption, high definition, and large size can be obtained.

FIG. 1 is a schematic cross-sectional view of a conventional organic light emitting display device, which illustrates a cross-sectional structure of an active matrix method that operates in a bottom emission method.

Referring to FIG. 1, the substrate 10 on which the thin film transistor Tr is formed is positioned. The thin film transistor Tr includes a gate electrode 15, an active layer 25, and source / drain electrodes 27a and 27b.

 Thereafter, the passivation layer 20 having a contact hole exposing a portion of the drain electrode 27b is positioned.

The first electrode 30 is electrically connected to the drain electrode 27b through the contact hole formed in the passivation layer 20.

An insulating layer 40 in which a subpixel is defined is positioned on the first electrode 30, and an organic emission layer 50 is positioned on the first electrode 30 of the subpixel. The second electrode 60 is formed as a common electrode on the organic light emitting layer 50. The first and second electrodes 30 and 60 serve to apply an electric field so that the organic light emitting layer 50 can emit light.

Subsequently, in order to protect the organic EL device E formed on the substrate 10 from external moisture and oxygen, a sealant 70 is applied to an outer portion of the substrate 10 and then the organic electric field. The organic light emitting display device is manufactured by performing an encapsulation process of bonding the encapsulation substrate 80 to face the light emitting diode element E.

That is, such an organic light emitting display device is formed by bonding a substrate on which the array element and the organic light emitting diode element are formed and a separate encapsulation substrate. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode device determines the yield of the organic light emitting display device, the overall process yield is greatly limited by the manufacturing process of the organic light emitting diode device corresponding to the latter step. do.

That is, there is a problem in that various costs and material costs lost in manufacturing a good array device are incurred, and production yield is lowered.

In addition, the bottom emission type organic light emitting display device has a high stability and a degree of freedom in the process due to the encapsulation process, but has a problem in that it is difficult to apply to a high resolution product due to the limitation of the aperture ratio. On the other hand, the organic light emitting display device of the top emission type is advantageous in terms of product life because it is easy to design a thin film transistor and improves the aperture ratio. However, in the conventional top emission type organic light emitting display device, since the material selection range is narrow as the cathode is normally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is lowered.

In addition, the organic light emitting display device is formed by exposing a pad portion to receive a signal from the outside, and the pad portion is formed of a metal, which may be easily corroded by external oxygen and moisture.

Such corrosion of the pad part may increase contact resistance between the metal of the pad part and the contact metal of the external circuit part, resulting in dark pixels, and deterioration of reliability of the organic light emitting display device.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic electroluminescent display device and a method of manufacturing the same, which are formed so that the yields of the thin film transistor and the organic light emitting diode element are not affected by each other, thereby increasing the defect rate and the production management efficiency.

In addition, another object of the present invention is to provide an organic light emitting display device having an improved light efficiency and a method of manufacturing the same.

In addition, another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same that can ensure reliability.

In order to achieve the above technical problem, an aspect of the present invention provides an organic light emitting display device. The organic light emitting display device may include a first substrate defined by a first region and a second region; A gate wiring formed on a first substrate corresponding to the first region, and a gate pad extending in the second region and extending from the gate wiring; A data pad extending in the first region and the second region on the first substrate; A gate insulating film formed on the gate wiring, the gate patch and the data pad; A data line positioned on the gate insulating layer, the data line formed to intersect the gate line, and a data pad link unit positioned at an end of the data line; At least one thin film transistor formed at an intersection of the gate line and the data line; A passivation layer including contact holes exposing portions of the thin film transistor, the data pad, the gate pad, and the data pad link unit, respectively; And a link wiring disposed on the passivation layer and electrically connecting the data pad and the data pad link unit.

In order to achieve the above technical problem, an aspect of the present invention provides an organic light emitting display device. The organic light emitting display device may include a first substrate; A data pad formed by stacking at least a first conductive film and a second conductive film on the first substrate; A gate insulating film formed on the data pad; A data pad link unit formed on the gate insulating layer; A passivation layer formed on the data pad link unit and having a contact hole exposing a portion of the data pad link unit; And a link wiring disposed on the passivation layer and electrically connecting the data pad link unit and the data pad, wherein the first conductive layer may be formed of a conductive material having corrosion resistance.

In order to achieve the above technical problem, there is provided a method of manufacturing an organic light emitting display device according to another aspect of the present invention. The manufacturing method includes providing a first substrate; Sequentially stacking a first conductive layer and a second conductive layer on the first substrate and patterning the gate electrode, the gate line, the gate pad, and the data pad; Forming a gate insulating film on the gate electrode, the gate wiring, the gate pad, and the data pad; Forming an active layer, a source / drain electrode, a data line, and a data pad link portion on the gate insulating layer corresponding to the gate electrode; Forming a passivation layer on the gate insulating layer including the active layer, the source / drain electrode, the data line, and the data pad link unit; Forming a contact hole in the passivation layer to expose the drain electrode, the data pad link unit, the gate pad, and a portion of the data pad, respectively; And forming a link wiring connecting the data pad and the data pad link unit to each other.

Hereinafter, an organic light emitting display device according to the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of an apparatus may be exaggerated for convenience. Like numbers refer to like elements throughout.

2 is a schematic view of a plane of an organic light emitting display device according to a first embodiment of the present invention.

Referring to FIG. 2, the first substrate 100 and the second substrate 200 spaced apart from each other by a predetermined interval are bonded to each other by the sealant pattern 300.

The first substrate 100 is defined as a first region 100a and a second region 100b, and corresponds to the first region 100a and includes a plurality of gate lines 112 and data lines that cross each other. 122 is located. In addition, the power wiring 132 formed in parallel with the gate wiring 112 at a predetermined interval may be located.

Here, the pixel region P is defined by the intersection of the gate line 112 and the data line 122. The pixel area P may include at least one thin film transistor. For example, in the pixel region P, a switching thin film transistor S-Tr electrically connected to the gate line 112 and the data line 122 and a driving thin film electrically connected to the switching thin film transistor S-Tr. The transistor D-Tr and the capacitor Cp may be located. In addition, the source electrode of the driving thin film transistor D-Tr is connected to the power line 132.

In addition, a data pad link unit 123 formed at an end of the data line 122 and a link wire 124 connected to the data pad link unit 123 are positioned corresponding to the first region 100a. In addition, the data pad 120 is formed to extend in the first region 100a and the second region 100b and is electrically connected to the link wiring 124.

The gate pad 110 formed at the end of the gate line 112 and the ground pad 130 formed at the end of the power line 132 may correspond to the second region 100b.

In addition, the common voltage pad 140 receives a common voltage from an external circuit part corresponding to the second region 100b. The common voltage pad 140 is connected to the organic light emitting diode device E formed on the second substrate 200.

As described above, the pad unit corresponding to the two regions 100b is connected to an external circuit unit, for example, TCP or FPC to receive an external signal.

On the other hand, the organic light emitting diode device E is formed inside the second substrate 200 and is connected to the thin film transistor formed on the first substrate 100.

The organic light emitting display device having such a configuration is driven as follows.

The external circuit unit applies a selection signal and a data signal to the gate pad 110 and the data pad 120, respectively. When the gate signal of the switching thin film transistor S-Tr is turned on through the gate line connected to the gate pad 110, the data signal is connected to the data pad 120. The wiring 122 passes through the switching thin film transistor S-Tr and is applied to the driving thin film transistor D-Tr and the capacitor.

The data signal turns on the gate electrode of the driving thin film transistor D-Tr to supply current to the organic light emitting diode element E through the driving thin film transistor D-Tr. When the current flows through the organic EL device E, holes and electrons are respectively supplied from the anode and the cathode to the organic light emitting layer, and the organic light emitting layer emits light by energy generated by recombination of the anode and the cathode. Implement the image.

In this case, the gray scale display may be performed by adjusting an on / off state of the driving thin film transistor according to the data signal and adjusting an amount of current flowing through the driving thin film transistor D-Tr.

In addition, when the selection arc is not applied, the data signal charged in the capacitor Cp is applied to the driving thin film transistor D-Tr, and the organic electroluminescent diode device is continuously applied until the next screen signal is applied. (E) emits light.

3 is a cross-sectional view illustrating a portion of the organic light emitting display device of FIG. 2. In FIG. 3, one driving thin film transistor is defined and illustrated, but a capacitor and a switching thin film transistor may be further included. In addition, although the pad unit included in the organic light emitting display device is illustrated as being limited to the data pad and the gate pad, the common voltage pad and the ground pad may be further included, but are omitted for convenience of description.

Referring to FIG. 3, in the organic light emitting display device, the first substrate 100 and the second substrate 200 are spaced apart from each other at regular intervals and bonded to each other by the sealant pattern 300. Here, the first substrate 100 is defined as a first region 100a and a second region 100b, and the sealant pattern 300 is formed at a boundary between the first region 100a and the second region 100b. ) Is formed. That is, the second substrate 200 is bonded to the first region 100a and sealed from the external environment, and the second region 100b is exposed to the external environment.

In this case, a plurality of gate wires and data wires cross the upper surface of the first substrate 100 corresponding to the first area 100a, and the two wires intersect to define a pixel area. At least one thin film transistor Tr is provided in each pixel area. In addition, an external circuit portion for applying a signal, for example, a pad portion for connecting to a TCP or FPC is formed in the second region 100b. Here, the pad part includes at least one of a gate pad 110, a data pad 120, a ground pad (not shown), and a common voltage pad (not shown).

However, the data pad 120 receiving the data signal is formed to extend in the first region 100a and the second region 100a and is located in the first region 100a. A part of) is connected to the pad link part 123 formed at the end of the data line, and a part of the data pad 120 located in the second area 100b is connected to an external circuit part.

On the other hand, the organic light emitting diode device E having the first electrode 210, the organic emission layer 220, and the second electrode 230 is formed on a lower surface of the second substrate 200.

Hereinafter, the first substrate 100 having the thin film transistor Tr and the pad part will be described in more detail.

The first substrate 100 is defined as a first region 100a and a second region 100b, and gate wirings are formed on an upper surface of the first substrate 100 corresponding to the first region 100a. Are not shown.), A gate electrode 111 formed by branching a portion of the gate wiring, and a power wiring (not shown in the drawing) formed in parallel with a predetermined distance from the gate wiring.

The data pad 120 is formed to extend in the first region 100a and the second region 100b of the first substrate 100.

A gate pad 110 extending from the gate line and positioned at an end of the gate line is positioned on an upper surface of the first substrate 100 corresponding to the second region 100b.

The gate pad 110 and the data pad 120 are formed of at least double layers in which the first conductive layer 150a and the second conductive layer 150b are sequentially stacked.

The second conductive film 150b is formed of a conductive material having corrosion resistance. Thus, even when the gate pad 110 and the data pad 120 are exposed to the outside, the second conductive layer 150b is formed of a conductive material having corrosion resistance, so that corrosion occurs due to external moisture and oxygen. I never do that. In this case, the second conductive layer 150b may be made of ITO or IZO.

The first conductive film 150a may be formed of a low resistance conductive material having a lower resistance than the second conductive film 150b. This is because the second conductive film 150b has a high resistance, thereby lowering the resistance of the second conductive film 150b. In this case, the first conductive layer 150a may be formed of Cr or Mo in consideration of reactivity with the second conductive layer 150b.

In addition, the gate wiring and the gate electrode 111 may also be formed by sequentially stacking the first conductive film 150a and the second conductive film 150b for convenience of the process.

The gate insulating layer 101 is positioned over the entire surface of the first substrate 100 including the gate electrode 111, the gate pad 110, and the data pad 120.

The active layer 113 is positioned on the gate insulating layer 101 corresponding to the first region 100a. The active layer 113 may be formed by sequentially stacking a channel layer 153a made of an amorphous silicon film and an ohmic contact layer 153b made of an amorphous silicon film doped with impurities.

Source / drain electrodes 121a and 121b formed on both ends of the active layer 113 and data wires (not shown in the drawing) intersecting with the gate wires are disposed. In addition, a data pad link unit 123 is disposed on the gate insulating layer 101 corresponding to the first region 100a and is formed at an end of the data line.

In this case, the data pad link unit 123 may be made of the same conductive material as that of the source / drain electrodes 121a and 121b, and a lower portion of the data pad link unit 123 may be formed by a process for reducing a mask. The laminated film of the tech layer 153b may be further located.

The passivation layer 102 is positioned over the entire surface of the first substrate 100 including the thin film transistor Tr and the data pad link unit 123.

The passivation layer 102 includes contact holes for exposing the drain electrode 121b, the data pad link unit 123, the gate pad 110, and the data pad 120, respectively. In this case, the contact hole exposes a first contact hole P1 exposing a portion corresponding to the first region a of the data pad 120 and a portion corresponding to the second region b. It may include a second contact hole (P2).

Link wires 124 are disposed on the passivation layer 102 to connect the data pad 120 exposed by the first contact hole P1 and the data pad link unit 123. The link line 124 may be formed to include at least one selected from the group consisting of Pt, Au, Ir, Cr, Mg, Ag, Ni, Al, and AlNd. In addition, the data pad 120 exposed by the second contact hole P2 is in contact with an external circuit unit to receive a data signal from the external circuit unit.

Furthermore, the protection layer 102 may further include a connection electrode 125 connected to the drain electrode 121b exposed to the contact hole. This is to compensate for the loss of the drain electrode 121b in the process of forming the contact hole.

The connection electrode 125 may be formed of the same conductive material as the link line 124 for the convenience of the process.

Unlike the drawing, the gate pad 110 and the data pad 120 may be formed as at least a double layer in which the second conductive layer 150b and the first conductive layer 150a are sequentially stacked. In this case, the first conductive layer 150a may have an opening formed by etching the second conductive layer 150b in the region exposed by the first and second contact holes P1 and P2.

As a result, a portion of the gate pad 110 or the data pad 120 exposed to the outside is exposed to the outside as the second conductive layer 150b made of a conductive material having corrosion resistance is exposed to the outside. Corrosion does not easily occur.

In this case, the ground pad and the common voltage pad (not shown) may also be formed of the same conductive layer as the gate pad.

For this reason, it is possible to prevent the pixel defects and the reliability of the organic light emitting display device from deteriorating due to corrosion of the pad portion exposed to the outside.

Meanwhile, the second substrate 200 on which the organic EL device E is formed will be described in detail.

The first electrode 210 is positioned as a common electrode on a lower surface of the second substrate 200. Here, the auxiliary electrode 205 may be further included between the second substrate 200 and the first electrode 210. The auxiliary electrode 205 serves to lower the resistance of the first electrode 210. In this case, since the auxiliary electrode 205 is mostly opaque as a metal having low resistance, the auxiliary electrode 205 may be formed at a portion corresponding to the non-light emitting area.

A buffer layer 215 defining a pixel area is positioned under the first electrode 210. The separator 225 and the spacer 235 spaced apart from the separator 225 are disposed on the buffer layer 215.

The organic light emitting layer 220 and the second electrode 230 are sequentially positioned below the first electrode 210.

The organic light emitting layer 220 may further include at least one of a hole injection layer, a hole transport layer, a hole suppression layer, an electron transport layer, and an electron injection layer on or below the organic emission layer 220. As a result, the energy level can be well matched at the interface of the first electrode 210, the organic emission layer 220, and the second electrode 230, thereby injecting electrons and holes to the organic emission layer 220 more smoothly. The luminous efficiency can be further improved.

In addition, the second electrode 230 is separated by each pixel region by the separator 225. Thus, the separator 225 is preferably formed of a reverse tapered partition. Alternatively, unlike the drawing, after forming an organic layer on the buffer layer 215, the buffer layer 215 is etched in an undercut shape to serve as a separator that separates the second electrode 230 for each pixel region. Can be.

In addition, the second electrode 230 is also formed in the spacer 235, and a portion of the second electrode 230 protrudes downward by the spacer 235, so that the second substrate 230 of the first substrate 100 is formed. It is connected to the thin film transistor Tr.

Further, although not shown in the figure, it may further include a moisture absorbing layer located under the second electrode 230. This is to prevent the organic light emitting layer 220 from being damaged by moisture.

As a result, a thin film transistor Tr is formed on an inner surface of the first substrate 100, and an organic EL device E is formed on an inner surface of the second substrate 200. In this case, the thin film transistor Tr and the organic light emitting diode device E are electrically connected to each other by a spacer 235 having a second electrode 230, and driven by the thin film transistor Tr. The organic light emitting diode device E may emit light, and light may be emitted to the second substrate 200 to provide an image to a user.

4A through 4F are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a second exemplary embodiment of the present invention.

Referring to FIG. 4A, a first substrate 400 is provided. The first substrate 400 may be a glass substrate or a plastic substrate.

After the first conductive film 450a and the second conductive film 450b are sequentially formed on the first substrate 400, patterned and gate gates having one direction (not shown), and the gate wirings A gate electrode 405 branched from the gate electrode 405 and a gate pad 410 positioned at an end of the gate line are formed. At the same time, a data pad 420 separated from the gate line is formed on the first substrate 100.

Here, the second conductive film 450b is a conductive material having corrosion resistance, and may be formed by depositing ITO or IZO. In addition, the first conductive film 450a is a low-resistance conductive material that does not react with the second conductive film 450b and has a lower resistance than the second conductive film 450b, and may be formed by depositing Cr or Mo. Can be.

Thereafter, a gate insulating layer 401 is formed over the entire surface of the first substrate 400 including the gate electrode 405, the gate pad 410, and the data pad 420. The gate insulating film 401 may be formed of a silicon oxide film, a silicon nitride film, or a laminated film thereof deposited by chemical vapor deposition.

Referring to FIG. 4B, amorphous silicon, a P-type or N-type doped amorphous silicon and a conductive material are sequentially deposited on the gate insulating layer 401, and then patterned to correspond to the gate electrode 405. An active layer 413 including a channel layer 453a and an ohmic contact layer 453b positioned thereon is formed. At the same time, a data line (not shown) that intersects the gate line, a data pad link portion 423 positioned at an end of the data line, and source / drain electrodes 421a and 421b are formed.

Here, the data line and the pad link unit are formed by forming source / drain electrodes 421a and 421b positioned on both ends of the active layer 413 and the active layer 413 using one mask. The channel layer 453a and the ohmic contact layer 453b may be further disposed under the 423.

Accordingly, the thin film transistor Tr including the gate electrode 405, the active layer 413, and the source / drain electrodes 421a and 421b on the first substrate 400, and the second conductive film having corrosion resistance ( A gate pad 410 and a data pad 420 formed of the first conductive layer 450a for lowering the resistance of the second conductive layer 450b and the second conductive layer 450b are formed.

Referring to FIG. 4C, a passivation layer 402 is formed on the gate insulating layer 401 including the thin film transistor Tr, the gate pad 410, and the data pad 420. The passivation layer 402 may be formed of an organic layer or an inorganic layer. For example, the organic layer may be at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), polyimide (PI), and novolac resin. The inorganic film may be a silicon oxide film, a silicon nitride film, or a laminated film thereof.

A contact hole exposing the drain electrode 421b, the data pad link unit 423, the gate pad 410, and the data pad 420 is formed in the passivation layer 402.

In this case, the contact hole may include a first contact hole P1 and a second contact hole P2 exposing both ends of the data pad 420, respectively.

Referring to FIG. 4D, a conductive material is deposited on the passivation layer 402 including the contact hole, and then patterned to form a link line for electrically connecting the data pad link unit 423 and the data pad 420. 424 is formed. Accordingly, the data signal applied through the data pad 420 is applied to the data pad link unit 423 through the link line 424 and is applied to the thin film transistor Tr through the data line.

As a result, the gate pad 410 and the data pad 420 exposed to the outside may be simultaneously formed, including the second conductive layer 450b having corrosion resistance.

At the same time, a connection electrode 425 electrically connected to the drain electrode 421b exposed in the contact hole may be further formed. In the process of forming the contact hole, the connection electrode 425 may lose the drain electrode 421b, thereby serving to compensate for this.

Meanwhile, referring to FIG. 4E, a second substrate 500 on which an organic EL device E is formed is provided.

In detail, the process of forming the organic light emitting diode device E on the second substrate 500 firstly provides the second substrate 500. The first electrode 510 is formed as a common electrode on the second substrate 500. The first electrode 510 is formed of a transparent conductive material having a high work function. For example, the first electrode 510 may be formed of ITO or IZO.

A buffer layer 515 is formed on the first electrode 510 to define each pixel region. The buffer layer 515 is formed of an insulating film. A separator 525 is formed on the buffer layer 515. Here, the separator 525 may be formed in a reverse tapered partition wall shape. In this case, the separator may be formed of an organic insulator. In addition, a spacer 535 is formed on the buffer layer 515 to be spaced apart from the separator 525.

 The organic emission layer 520 and the second electrode 530 are sequentially formed over the entire first electrode 510 including the spacer 535. In this case, the second electrode 530 is automatically separated into subpixels by the separator 525. In addition, since the second electrode 530 extends above the spacer, a part of the second electrode 530 protrudes upward by the spacer 535.

In this case, a hole injection layer and / or a hole transport layer may be further formed before the organic light emitting layer 520 is formed. In addition, after the organic emission layer 520 is formed, at least one or more of a hole suppression layer, an electron transport layer, and an electron injection layer may be further formed.

Here, a moisture absorbing film (not shown) may be further formed on the second electrode 530. The moisture absorption film may be made of BaO or CaO. As a result, the moisture absorbing film can protect the organic EL device E from moisture and oxygen penetrated into the device, thereby preventing the life of the completed device from being reduced.

Referring to FIG. 4F, after the sealant pattern 600 is formed on the first substrate 400 on which the thin film transistor Tr is formed or on the second substrate 500 on which the organic EL device E is formed, the two substrates are formed. The organic light emitting display device is manufactured by performing an encapsulation process of bonding the organic light emitting diodes. The sealant pattern 600 is formed across the first contact hole P1 and the second contact hole P2 exposing both ends of the data pad 420, respectively. In addition, the sealant pattern 600 is formed so that the data pad link part 424 is positioned inside the sealant pattern 600. As a result, the data pad link unit 424 is not exposed to the outside.

In this case, the drain electrode 421b of the first substrate 400 and the second electrode 530 protruding by the spacer 535 of the second substrate 500 contact each other.

In addition, the inside of the first substrate 400 and the second substrate 500 may be filled with an inert gas to remove moisture and oxygen. As a result, the lifespan of the organic light emitting layer 420 formed on the second substrate 400 may be reduced or moisture may be prevented from occurring due to moisture and oxygen.

5A through 5D are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a third exemplary embodiment of the present invention. In this case, except that the data pad is formed by changing the deposition order of the first conductive film and the second conductive film, the same process as the manufacturing process of the organic light emitting display device according to the second embodiment is performed. Like reference numerals refer to like elements, and repeated descriptions will be omitted.

Referring to FIG. 5A, the second conductive film 450b and the first conductive film 450a are sequentially stacked on the first substrate 400, and then patterned to form a gate wiring having one direction. Not formed), a gate electrode 405 branched from the gate wiring, and a gate pad 410 positioned at an end of the gate wiring. At the same time, the data pad 420 is formed on the first substrate 100.

Here, the second conductive film 450b is a conductive material having corrosion resistance, and may be formed by depositing ITO or IZO. In addition, the first conductive film 450a is a low-resistance conductive material that does not react with the second conductive film 450b and has a lower resistance than the second conductive film 450b, and may be formed by depositing Cr or Mo. Can be.

A gate insulating layer 401 is formed on the entire surface of the first substrate 400 including the gate electrode 405, the gate pad 410, and the data pad 420.

An active layer 413 in which a channel layer 453a and an ohmic contact layer 453b are stacked on the gate insulating layer 401, source / drain electrodes 421a and 421b, and data wirings (not shown). After forming the data pad link portion 423 positioned at the end of the data line, a protective film 402 is formed.

Referring to FIG. 5B, contact holes exposing the drain electrode 421b, the data pad link unit 423, the gate pad 410, and the data pad 420 are formed in the passivation layer 402. . The contact hole may include a first contact hole P1 and a second contact hole P2 exposing both ends of the data pad 420, respectively.

The second conductive layer 450b is exposed by etching the first conductive layer 450a which is an upper layer of the gate pad, the data pad, and the data pad link unit exposed by the contact hole to the passivation layer 402. An opening to be formed is formed. That is, the second conductive film 450b having corrosion resistance is exposed to the outside and contacts the external circuit unit.

Referring to FIG. 5C, a conductive material is deposited on the passivation layer 402 including the contact hole, and then patterned to form a link line for electrically connecting the data pad link unit 423 and the data pad 420. 424 is formed. In addition, in the process of forming the contact hole, the drain electrode 421b may be lost, and a connection electrode 425 may be further formed to compensate for this.

Referring to FIG. 5D, after the sealant pattern 600 is formed on the first substrate 400 on which the thin film transistor Tr is formed or on the second substrate 500 on which the organic EL device E is formed, the two substrates are formed. The organic light emitting display device is manufactured by performing an encapsulation process of bonding the organic light emitting diodes.

As described above, the organic light emitting display device according to the present invention forms a thin film transistor and an organic light emitting diode element on different substrates, and then combines the two substrates to manufacture the organic light emitting display device, thereby reducing the defect rate and Along with this, the yield of production can be expected.

In addition, the pad portion exposed to the outside may be formed of a conductive material having high corrosion resistance, thereby preventing corrosion of the pad portion.

In addition, the corrosion of the pad portion can be prevented, and a problem caused by the corrosion of the pad portion can be solved, and the reliability can be improved.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that.

Claims (31)

A first substrate defined by a first region and a second region; A gate wiring formed on a first substrate corresponding to the first region, and a gate pad extending in the second region and extending from the gate wiring; A data pad extending in the first region and the second region on the first substrate; A gate insulating film formed on the gate wiring, the gate pad and the data pad; A data line positioned on the gate insulating layer, the data line formed to intersect the gate line, and a data pad link unit positioned at an end of the data line; At least one thin film transistor formed at an intersection of the gate line and the data line; A passivation layer including contact holes exposing portions of the thin film transistor, the data pad, the gate pad, and the data pad link unit, respectively; A link wiring disposed on the passivation layer and electrically connecting the data pad and the data pad link unit; A second substrate spaced apart from the first substrate at a predetermined interval and bonded by a sealant pattern; And An organic electroluminescent diode element formed inside the second substrate; / RTI > The data pad is formed by stacking a first conductive layer and a second conductive layer, and the first conductive layer is formed of a conductive material having corrosion resistance. And the data pad is disposed outside the sealant pattern and the link wiring is formed inside the region where the sealant pattern is formed and corresponds to the second substrate. delete delete The method of claim 1, And the second conductive layer is formed of a low resistance conductive material having a lower resistance than the first conductive layer. delete The method of claim 1, And the data pad has the first conductive layer formed on the second conductive layer. The method of claim 1, And the data pad has the second conductive film on the first conductive film, and the second conductive film has an opening that exposes a portion of the first conductive film. The method of claim 1, The gate pad is formed of the same conductive material as the data pad. delete delete The method of claim 1, And a connection electrode formed of the same conductive material as the link wiring and connected to the thin film transistor exposed through the contact hole. delete delete delete delete delete delete delete delete delete delete delete Providing a first substrate; Sequentially stacking a first conductive layer and a second conductive layer on the first substrate and patterning the gate electrode, the gate line, the gate pad, and the data pad; Forming a gate insulating film on the gate electrode, the gate wiring, the gate pad, and the data pad; Forming an active layer, a source / drain electrode, a data line, and a data pad link portion on the gate insulating layer corresponding to the gate electrode; Forming a passivation layer on the gate insulating layer including the active layer, the source / drain electrode, the data line, and the data pad link unit; Forming a contact hole in the passivation layer to expose the drain electrode, the data pad link unit, the gate pad, and a portion of the data pad, respectively; Forming a link wiring connecting the data pad and the data pad link unit to each other; Providing a second substrate on which an organic EL device is formed; Forming a sealant pattern on an outer portion of the first substrate or an outer portion of the second substrate; And Bonding the first and second substrates together; / RTI > The conductive film of any one of the first and second conductive films is formed of a conductive material having corrosion resistance, And the data pad is disposed outside the sealant pattern and the link wiring is formed inside a region corresponding to the second substrate and on which the sealant pattern is formed. delete 24. The method of claim 23, The first conductive film is formed of a conductive material having corrosion resistance, And forming the contact hole exposing the data pad to expose the first conductive layer by simultaneously etching the second conductive layer. delete 24. The method of claim 23, And forming a connection electrode on the drain electrode exposed through the contact hole in the forming of the link wiring. 24. The method of claim 23, And forming contact holes exposing the data pads as first and second contact holes exposing both ends of the data pad, respectively. delete delete The method of claim 28, And the sealant pattern is formed across the first contact hole and the second contact hole.

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