KR101177372B1 - Gas heater - Google Patents

Abstract

The present invention relates to a gas heating device. In particular, it is related with the gas heating apparatus which can fill the internal space of a chamber with the member which expands the movement path of gas, and can improve the heating efficiency of gas.
According to an embodiment of the present invention, a gas heating apparatus includes a chamber providing an internal space in which a gas is heated, a heating block connected to the chamber, and heating the internal space, and in the internal space along a direction in which the gas is introduced. And a partition wall forming at least one accommodation space and a plurality of path expansion members filled in the accommodation space in a saturated state. In addition, at least one of a metal sponge, a metal ball, a porous metal ball, a ceramic ball, and a porous ceramic ball may be used as the path expanding member.

Description

Gas heater {Gas heater}

The present invention relates to a gas heating device. In particular, it is related with the gas heating apparatus which can improve the heating efficiency of gas by providing the member which expands the movement path of gas in the internal space of a chamber.

Recently, metal organic chemical vapor deposition (MOCVD) has been attracting attention among chemical vapor deposition (CVD) due to miniaturization of semiconductor devices, development of high efficiency, high power LEDs, and the like.

The organometallic chemical vapor deposition method is a deposition method using an organic radical and a metal-bonded material as a precursor. An organic metal compound or an organometallic compound and a hydrogen compound are used as raw materials to cause an irreversible thermal decomposition reaction to occur on a substrate. Crystals are grown on a substrate. Since the organometallic chemical vapor deposition method supplies the raw material in a gaseous state, the amount of the raw material can be controlled relatively easily and accurately. That is, there is an advantage that mass production is easy as a method suitable for plural-based and multi-layer epitaxial growth.

In order to improve the reaction efficiency of the raw materials, the production equipment that receives gaseous raw materials, including those used for organometallic chemical vapor deposition, is used as a carrier gas (hereinafter, referred to as 'gas'). Is heated to a constant temperature.

The conventional gas heating apparatus uses a method in which a chamber in which an inner space is formed is heated by a heating means or the like, and a gas is passed through the inner space of the chamber and heated to a constant temperature.

By the way, the conventional gas heating apparatus is formed as a space in which the inner space of the chamber, that is, the gas path and at the same time the heating space is simply an empty space, and because the gas moves at a high speed in such internal space, sufficient heating It was hard to secure time. That is, the heating efficiency of the gas is lowered, there is a problem that the consumption of thermal energy is increased in order to heat the transport gas to a constant temperature.

In addition, conventionally, a method of extending the internal space of the chamber has been used to secure the heating time of the gas in the chamber. However, this conventional method has a problem that the size of the chamber can be too large, which increases the manufacturing cost of the gas heating device and causes a space limitation when mounting the gas heating device in the manufacturing facility.

In addition, in the conventional gas heating apparatus, there is a problem in that the gas cannot be heated in a crack by generating a difference in the moving speed of the gas in the edge region adjacent to the inner wall of the chamber and the central region spaced apart from the inner wall of the chamber.

The present invention provides a gas heating device.

The present invention provides a gas heating apparatus that forms an accommodation space for expanding a gas movement path in an interior space of a chamber, and fills a member for expanding the gas movement path in the accommodation space to improve the heating efficiency of the gas.

In the present invention, at least one of a metal sponge, a metal ball, a porous metal ball, a ceramic ball, and a porous ceramic ball is used as a member for extending a gas movement path, and when a ceramic material is used, alumina (Al ₂ O ₃ ), Silica (SiO ₂ ), yttria (Y ₂ O ₃ ) or zirconia (ZrO ₂ ) to provide a gas heating device that is used.

According to an embodiment of the present invention, a gas heating apparatus includes a chamber providing an internal space in which a gas is heated, a heating block connected to the chamber, and heating the internal space, and in the internal space along a direction in which the gas is introduced. And a partition wall forming at least one accommodation space and a plurality of path expansion members filled in the accommodation space in a saturated state.

In addition, at least one of a metal sponge, a metal ball, a porous metal ball, a ceramic ball, and a porous ceramic ball may be used as the path expanding member.

The gas heating apparatus according to the embodiments of the present invention improves the heating efficiency of gas by filling a path expanding member in a chamber providing an inner space in which gas is heated, thereby expanding the thermal contact area of the gas passing through the inner space. Can be improved.

In addition, due to the path expansion member provided on the movement path of the gas, not only the movement path of the gas is extended but also the effect of extending the heating time of the gas can improve the heating efficiency of the gas.

In addition, by dividing at least one accommodating space in which the path expanding member is filled into the chamber, the heating efficiency of the gas can be smoothly increased without increasing the size of the gas heating apparatus, and the gas heating apparatus can be manufactured in a manufacturing facility or the like. Space can be prevented from occurring during installation.

In addition, since the path expansion member is filled in the accommodating space formed inside the chamber in a saturated state, the gas may be uniformly heated by minimizing the difference in the movement speed of the gas according to the positional difference between the center region and the edge region of the accommodating space. have.

Therefore, the gas can be easily heated to the temperature required in the subsequent process, thereby improving the productivity of the manufacturing process.

1 is a view schematically showing an application example of a gas heating device according to the present invention.
Figure 2 is an internal configuration of the gas heating device according to an embodiment of the present invention.
3 is an internal configuration diagram of a gas heating device according to a first modification of the present invention.
4 is an internal configuration diagram of a gas heating device according to a second modification of the present invention.
5 is an internal configuration diagram of a gas heating device according to a third modification of the present invention.
Figure 6 is an enlarged view of a portion of the porous path expansion member in the path expansion member according to the present invention.
Figure 7 is a photograph of the micro-pores of the porous path expansion member shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To provide a complete description of the category. Wherein like reference numerals refer to like elements throughout.

1 is a view schematically showing an application example of the gas heating apparatus according to the present invention. The gas heating apparatus according to the embodiments of the present invention (including one embodiment and variations) may be applied to an organometallic chemical vapor deposition apparatus using a gaseous raw material, and this application example is applied as one application of the present invention. Let's explain. Here, the gas heating apparatus according to the embodiments of the present invention can be applied to various manufacturing facilities or apparatuses requiring gas heating in addition to the organometallic chemical vapor deposition equipment.

Referring to FIG. 1, a gas heater 100 according to embodiments of the present invention is a carrier for moving a liquid source L _s in a vaporizer 50. gas; G _c ) is a device for heating to a constant temperature. In order to improve the vaporization efficiency of the liquid raw material (L _s ) in the vaporizer 50, the liquid raw material (L _s ) is heated to a constant temperature while being transported along the liquid raw material supply line 30, and at the same time the transfer gas G _c is also heated to a constant temperature while passing through the gas heating device 100. Before injecting the liquid raw material L _s and the transfer gas G _c into the vaporizer 40, the vaporization efficiency may be improved by increasing the temperature of the liquid raw material L _s and the transfer gas G _c . Thereafter, the gas source (G _s ) and the transfer gas (G _c ) vaporized through the vaporizer 50 are supplied to a process chamber or a process chamber 60 of a subsequent process to form crystals on the substrate. It is used for the deposition process etc. to establish.

In one application of the present invention, liquid organic compounds such as TEOS, Ta ₂ O (C ₂ H ₅ ) ₅ , Cu (hfac) (VTMS), etc. are used as the liquid raw materials, and are vaporized in the vaporizer 50 to process chambers. At 60, it is used to form a thin film of SiO ₂ , Ta ₂ O ₅ , Cu, or the like. In addition, in one application of the present invention, hydrogen (H ₂ ) gas is used as a carrier gas heated through the gas heating device 100, but is not limited thereto, and nitrogen (N ₂ ) gas or oxygen (O ₂ ) gas or Various gases can be heated to a constant temperature, including inert gases such as helium (He) gas and argon (Ar) gas.

2 is an internal configuration diagram of a gas heating apparatus according to an embodiment of the present invention, Figures 3 to 5 is an internal configuration diagram of a gas heating apparatus according to the modifications of the present invention, Figure 6 according to the present invention FIG. 7 is an enlarged view of a part of the porous path expanding member among the path expanding members, and FIG. 7 is a photograph of the micro voids of the path expanding member shown in FIG. 6. (Hereinafter, the gas heated by the gas heating device is referred to as 'gas (G)'.)

2 to 7, the gas heating apparatus 100 according to embodiments of the present invention 100 (100a to 100d) includes a chamber 110 that provides an internal space in which gas G is heated, and a chamber ( A heating block 140 coupled to 110 to heat the internal space of the chamber 110 and at least one accommodating space A ₁ , in the internal space along the inlet direction (x direction) of the gas G; A plurality of path expansion members 200 filled in the partition wall 210 forming the A ₁ ', A ₂ , A ₃ and the receiving spaces A ₁ , A ₁ ', A ₂ , A ₃ saturated. Include.

The chamber 110 provides a space that is heated while the gas G passes, that is, an internal space S, and is made of a metal material to withstand deformation due to a pressure difference between the external space and the internal space S. The chamber 110 may be formed in a hollow cylinder or polygonal cylinder shape, and in the present embodiments, the chamber 110 may be formed in a cylindrical shape.

When the gas G passes through the internal space of the chamber 110, the moving speed of the gas G is determined from the edge region P ₂ adjacent to the inner circumferential surface of the chamber 110 (see FIG. 2) and the inner circumferential surface of the chamber 110. It appears different in the spaced central region P ₁ ; see FIG. 2. That is, in the edge region P ₂ , frictional or resistive forces are generated by the inner circumferential surface of the chamber 110, which is relatively slower than the moving speed in the central region P ₁ . Therefore, in the present embodiments, in order to minimize non-uniform heating of the gas G caused by the difference in the moving speed of the gas G in the internal space, the vertical cross section of the internal space (the cross section when cut in the y direction) is It is preferable to use a cylindrical chamber 110 to form a circular cross section.

In the present embodiments, the chamber 110 has a cylindrical main body 112 having both ends open, and a pair of caps coupled to the open ends of the main body 112 by welding or the like. (cap; 114). Here, the main body 112 and the pair of caps 114 (114a and 114b) are formed of an aluminum alloy.

The heating block 140 for increasing the temperature of the inner space is coupled to the outer circumferential surface of the chamber 110. In the present exemplary embodiment, the heating block 140 is coupled to cover both sides of the chamber 110 and both sides thereof, but as a variant, the heating block 140 is coupled to only the side of the chamber 110 so that the gas Both end surfaces of the heating device 100 may be exposed while the pair of caps 114 are coupled to each other.

An inlet gas pipe 120 for supplying gas G is connected to a cap 114a on one side of the chamber 110, and a gas on the cap 114b on the other side of the other end of the chamber 110. The exhaust gas pipe 190 is connected to face the incoming gas pipe 120 along the inflow direction (x direction) of (G). In addition, the inlet port 130 and the exhaust port 150 are formed through the pair of caps 114a and 114b, respectively, and the inlet gas pipe 120 and the exhaust gas pipe 190 are connected to each other.

The inlet 130 communicating the inner space of the chamber 110 with the inlet gas pipe 120 may be formed to have a size smaller than the inner diameter of the inlet gas pipe 120, and the difference in diameter may be defined by the chamber 110. The pressure difference between the inside and outside of the Therefore, by forming the diameter of the inlet 130 differently, the inlet rate of the gas G can be adjusted. Although not shown, when the injection speed adjusting means such as a pump that can forcibly adjust the injection speed of the gas (G) on the inlet gas pipe 120 is provided, the diameter of the inlet 130 is the diameter of the inlet gas It can be freely deformed regardless of the size of the inner diameter of the pipe (120).

Meanwhile, as in the third modified example of the present invention illustrated in FIG. 5, a plurality of inlets 130 '; 130a, 130b, and 130c may be formed through the cap 114a' forming one end surface of the chamber 110. FIG. have. (Here, the connection portion of the inlet gas pipe 120 'is also modified to correspond to the plurality of inlets 130'.)

In this case, the plurality of inlets 130 ′ may be formed to have different diameter sizes so that the amount of gas G is differently adjusted according to the positions of the regions P ₁ and P ₂ in the internal space of the chamber 110. Can be. That is, the movement speed of the gas G is relatively slow, so that the amount of the gas G is increased in the edge region P ₂ where the heating time of the gas G is sufficiently secured, and the movement speed of the gas G is increased. Is relatively fast, and the gas G exiting the exhaust port 150 can be heated more uniformly by reducing the amount of gas G drawn in the central region P ₁ where the heating time of the gas G is not sufficient. have. That is, the heating efficiency of gas G can be improved.

The heating block 140 is composed of a heating coil wound in multiple layers on the outer circumferential surface of the chamber 110, a heating jacket or a cartridge heater that surrounds the outer circumferential surface of the chamber 110. A power line (not shown) for supplying power to the heating block 140 may be connected to one side of the heating block 140. Meanwhile, a temperature sensor (not shown) is provided inside the heating block 140 to check the heating temperature of the heating block 140 in real time.

Looking at the process of heating the gas (G) through the gas heating device 100 including the chamber 110, the heating block 140 and the gas pipes 120, 190 as described above, a gas tank (not shown) The gas G supplied from the back is introduced into the internal space of the chamber 110 through the incoming gas pipes 120 and 120 '. The internal space of the chamber 110 is maintained at a constant temperature by a heating block 140 coupled to the chamber 110, and is decompressed by a compression pump (not shown) provided on one side of the chamber 110. Can be maintained.

The gas G introduced into the internal space of the chamber 110 passes along the receiving spaces A ₁ , A ₁ ′, A ₂ , and A ₃ described below while moving along the extension direction (x direction) of the chamber 110. Then, the heat is transferred from the path expansion member 200 filled in the heated state of the internal space and the accommodation spaces A ₁ , A ₁ ′, A ₂ , and A ₃ to be heated. Thereafter, the gas G passing through the internal space of the chamber 110 is exhausted to the outside of the chamber 110 through the exhaust port 150 and the exhaust gas pipe 190 and transferred to the processing chamber 60 (see FIG. 1). do.

The path expansion member 200 is filled in the accommodation spaces A ₁ , A ₁ ′, A ₂ , and A ₃ formed in the internal space of the chamber 110, and has a high thermal conductivity of metal or ceramic. When the internal space of the chamber 110 is heated by the heating block 140, the temperature is increased. When the ceramic material is used as the path expanding member 200 in the present embodiments, any one of alumina (Al ₂ O ₃ ), silica (SiO ₂ ), yttria (Y ₂ O ₃ ) or zirconia (ZrO ₂ ) is used. One material is used. Of course, when the thermal conductivity is excellent and no thermal deformation or chemical reaction occurs in the process of heating the gas G, various ceramic materials may be applied as the path expanding member 200 in addition to the ceramic materials mentioned above. Of course it is.

The path expansion member 200 is classified according to shape and material, and in the present embodiments, a metal sponge, a metal ball, a porous metal ball, a ceramic ball And at least one of porous ceramic balls is used.

The path expansion member 200 is formed in a spherical shape (circular cross section) or an egg shape (cross section elliptical shape). (Here, as an exception to the cross-sectional shape, when the metal sponge is used as the path expanding member 200, the cross-sectional shape is formed into a plate shape. The cross-sectional shape is perpendicular to the inflow direction (x direction) of the gas G). The path expansion member 200 is filled in the internal space of the chamber 110 to hinder the flow of the gas G, and the gas ( G) extends the movement path of the gas G by inducing the movement flow of the gas G along the surface of the path expansion member 200. That is, it provides the effect of extending the heating time of the gas G.

(In the conventional gas heating device, the gas moving path is formed in a straight line along the extending direction of the chamber, while the gas heating device 100 according to the present invention has the gas G moving path R ₁ or R ₂ ; 6) can be formed in a curved line to sufficiently secure the movement path of the gas G without expanding the size of the chamber 110.)

In addition, the path expansion member 200 is heated together while the internal space of the chamber 110 is heated by the material properties to maintain a high surface temperature, the path expansion member 200 is a gas (G) adjacent or The temperature of the gas G is increased when the gas G moves by increasing the area of the thermal contact to collide. Therefore, the heating efficiency of gas G can be improved compared with the conventional gas heating apparatus.

Meanwhile, in the present invention, in order to further improve the heating efficiency of the gas G, a porous material may be used to further extend the movement path of the gas G. That is, a plurality of fine pores 202 (see FIGS. 6 and 7 (b)) formed of curved grooves or holes are formed in the metal ball or ceramic ball path extending member 200 having a boring outer surface, and the gas ( The path r ₁ , r ₂ (see FIG. 6) through which the gas G passes is further enlarged by allowing G) to pass through the micro voids 202. Therefore, when the porous metal ball or the porous ceramic ball is used as the path expanding member 200, the heating efficiency of the gas G may be improved than when the general metal ball or the ceramic ball is used. Here, improving the heating efficiency of the gas (G) means that the amount of heat consumed required to raise the gas (G) to a constant temperature is small.

The plurality of path expanding members 200 may be confined within a predetermined area without being irregularly filled in the internal space of the chamber 110. That is, accommodation spaces A ₁ , A ₁ ′, A ₂ , and A _{3 in which} the plurality of path expansion members 200 are filled are formed in the internal space of the chamber 110. The accommodating spaces A ₁ , A ₁ ′, A ₂ , A ₃ may be formed in the entire inner space (A ₁ ; see FIG. 2) as in one embodiment of the present invention. And as in the third modification can be formed as one division region (A ₁ '; see Fig. 3 or 5) in a part of the interior space. In addition, as in the second modified example of the present invention, a plurality of divided regions may be formed along the inflow direction (x direction) of the gas G (A ₁ , A ₂ , A ₃ ; see FIG. 4).

When the path expansion member 200 is filled in the accommodation spaces A ₁ , A ₁ ′, A ₂ , and A ₃ , various factors such as the type of the gas G, the amount of gas, the moving speed, and the heating efficiency are taken into consideration. The width L of the accommodation spaces A ₁ , A ₁ ′, A ₂ , and A ₃ is determined, and the type and diameter size of the path expansion member 200 are determined.

In particular, when a plurality of accommodation spaces A ₁ , A ₂ , A ₃ are formed in the internal space of the chamber 110, each of the widths L ₁ , L ₂ , L ₃ in consideration of various factors mentioned above. The size is determined. The plurality of accommodation spaces A ₁ , A ₂ , A ₃ may be formed to have the same width size, or may be formed to have different width sizes. On the other hand, the plurality of accommodation spaces (A ₁ , A ₂ , A ₃ ) can be filled with the path expansion member 200 having the same type and the same diameter size, the path expansion member having the same type and different diameter size It is possible to fill in the 200 or to fill the plurality of accommodation spaces A ₁ , A ₂ , and A ₃ with the path expansion member 200 having different diameters and the same diameter size. In addition, the path expansion member 200 having different diameters and sizes may be filled in the plurality of accommodation spaces A ₁ , A ₂ , and A ₃ , respectively.

In order to form the accommodation spaces A ₁ , A ₁ ′, A ₂ , and A ₃ , a partition wall 210 is provided in the internal space of the chamber 110. The partition wall 210 is in contact with the inner circumferential surface of the chamber 110 and the through-hole which is in close contact with the inner circumferential surface of the support partition wall 212 and has a diameter smaller than the diameter of the path expansion member 200. At least one 216 is formed of a divided partition 214. As shown in FIG. 2, the receiving space A ₁ is formed in all regions on the inner space of the chamber 110 so that the partition partition 214 is adjacent to both sides of the chamber 110. One through hole 216 is formed, and when the accommodation spaces A ₁ ′, A ₂ , and A ₃ are formed on the inner space of the chamber 110 by being spaced apart from both sides of the chamber 110, the partition partition wall ( A plurality of through holes 216 are formed in 214.

When the accommodation spaces A ₁ and A ₁ ′ are formed as one divided area as in one of the _first , third, and third modified embodiments, a pair of divided partitions 214 are used. When the accommodation spaces A ₁ , A ₂ , and A ₃ are formed of a plurality of divided regions as in the second modified example of the present embodiments, two or more pairs of partition partitions 214 are used. (In this case, the number of use of the divided partition 214 in which a pair constitutes one set is the same as the number in which the accommodation space is formed.) On the other hand, although not shown, the accommodation space as in the embodiment of the present invention is When forming (A ₁ ) in the entire interior space, a pair of divided partitions 214 may not be provided. In this case, the size of the path expansion member 200 should be larger than the size of the inlet 130 and the exhaust port 150 so as not to be discharged through the inlet 130 and the exhaust port 150. In addition, the excessively large path expansion member 200 should not be filled in the accommodation space A ₁ to prevent clogging of the inlet 130 and the exhaust port 150 by the path expansion member 200.

The support partition wall 212 in close contact with the inner circumferential surface of the chamber 110 serves as a metal protective film in which the inner circumferential surface of the chamber 110 can prevent damage due to corrosion or friction due to contact with the gas G. In the examples, the support bulkhead 212 and the partition bulkhead 214 are formed of stainless steel having excellent rigidity and thermal conductivity.

In the above description, the chamber 110 according to the embodiments has been described as having a cylindrical shape. Therefore, the internal space of the chamber 110 has a circular cross section in the cutting in the direction (y direction) which crosses the inflow direction (x direction) of the gas G. As shown in FIG. The support partition wall 212 in close contact with the inner space of the chamber 110 has a cylindrical shape having an outer diameter size that is the same as the inner diameter of the chamber 110. In addition, the partition partition wall 214 in close contact with the inside of the support partition wall 212 has a disk shape having a diameter size the same as the inner diameter of the support partition wall 212. Of course, when the shape of the chamber 110 is changed to change the shape of the internal space, it is natural that the shape of the partition wall 210 is correspondingly modified.

In the disk-shaped partitioned partition wall 214, one minute through hole 216 or a plurality of through holes 216 (see FIGS. 3 to 5) are formed to allow gas G to pass therethrough. At this time, the plurality of through-holes 216 formed in the divided partition 214 has a diameter size smaller than the diameter of the path expansion member 200 so that the path expansion member 200 does not exit from the accommodation space (A). Is formed.

In the process of passing through the accommodation space (A), the gas (G) which is heated adjacent to or bumped into the path expansion member 200 is exhausted to the outside of the chamber 110 through the exhaust port 150 and the exhaust gas pipe 190. The exhausted gas G is supplied to a processing chamber 60 (see FIG. 1) such as a semiconductor manufacturing facility and used for a substrate processing process. Although not shown, a temperature sensor may be installed in the exhaust gas pipe 190 to measure the temperature of the gas G heated by the gas heating device 100 in real time.

The gas heating apparatus 100 (100a, 100b, 100c, 100d) according to one embodiment, the first modification, the second modification and the third modification of the present invention described above can be used as a gas heating apparatus in an independent state, respectively. And combining each of the features (partly forming a receiving space in the inner space, increasing the number of inlets, and forming a plurality of receiving spaces) to form a gas heating apparatus according to a new modification. can do.

As described above, the gas heating apparatus according to the embodiments of the present invention expands the thermal contact area of the gas passing through the inner space by filling the path extending member inside the chamber providing the inner space where the gas is heated. The heating efficiency of the gas can be improved. In addition, due to the path expansion member provided on the movement path of the gas, not only the movement path of the gas is extended but also the effect of extending the heating time of the gas can improve the heating efficiency of the gas.

In addition, by dividing at least one accommodating space in which the path expanding member is filled into the chamber, the heating efficiency of the gas can be smoothly increased without increasing the size of the gas heating apparatus, and the gas heating apparatus can be manufactured in a manufacturing facility or the like. Space can be prevented from occurring during installation. In addition, since the path expansion member is filled in the accommodating space formed inside the chamber in a saturated state, the gas may be uniformly heated by minimizing the difference in the movement speed of the gas according to the positional difference between the center region and the edge region of the accommodating space. have.

Therefore, the gas can be easily heated to the temperature required in the subsequent process, thereby improving the productivity of the manufacturing process.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Therefore, it will be apparent to those skilled in the art that the present invention may be variously modified and modified without departing from the technical spirit of the following claims.

100: gas heating device 110: chamber
112: main body 114: cap
120: incoming gas piping 130: inlet
140: heating block 150: exhaust port
190: exhaust gas pipe 200: path expansion member
202: micro voids 210: partition wall
212 support bulkhead 214 split bulkhead

Claims (9)

A chamber providing an interior space in which the gas is heated;
A heating block connected to the chamber to heat the internal space;
A plurality of divided partition walls for dividing the internal space into a plurality of accommodation spaces along a direction in which the gas is drawn; And
A plurality of path expanding members filled in each of the plurality of receiving spaces in a saturated state;
Gas heating device comprising a. The method according to claim 1,
The path expansion member,
A gas heating device comprising at least one of a metal sponge, a metal ball, a porous metal ball, a ceramic ball, and a porous ceramic ball. The method according to claim 2,
As the ceramic material of the path expansion member,
A gas heating apparatus in which at least one of alumina (Al ₂ O ₃ ), silica (SiO ₂ ), yttria (Y ₂ O ₃ ), or zirconia (ZrO ₂ ) is used. The method according to claim 1,
A support partition wall in close contact with the inner circumferential surface of the chamber,
The divided partition wall is in close contact with the inner circumferential surface of the support partition wall, at least one through-hole having a diameter size smaller than the diameter size of the path expansion member is formed. The method of claim 4,
The support partition wall and the partition partition wall is a gas heating device made of stainless steel. The method according to any one of claims 1 to 3,
Gas heating device is provided with a temperature sensor inside the heating block. The method according to any one of claims 1 to 3,
The plurality of accommodation spaces,
And a gas heating device formed to have a different width along the inlet direction of the gas. The method of claim 7,
And a path expansion member filled in the plurality of accommodation spaces having different diameter sizes from each other. The method according to any one of claims 1 to 3,
At least one inlet through which the gas is introduced is formed in one side of the chamber, and an exhaust port for exhausting the heated gas facing the inlet is formed in the other side of the chamber.

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