KR101169542B1 - Method for manufacturing pad conditioner of chemical mechanical polishing equipment - Google Patents

Abstract

The present invention relates to a pad conditioner for a chemical-mechanical-polishing (CMP) device and a manufacturing method thereof, and more particularly to improving the planarization of a polishing pad for chemical-mechanical-polishing (CMP), In addition, a conditioner for a CMP device and a method of manufacturing the same are disclosed, which have a function of effectively performing the above, excellent in the conditioning performance, long in life, and easy to manufacture the conditioner, which can significantly reduce the defective rate at the time of manufacture.

Description

Method for manufacturing pad conditioner of chemical mechanical polishing equipment

The present invention relates to a pad conditioner for a chemical-mechanical-polishing (CMP) device and a manufacturing method thereof, and more particularly to improving the planarization of a polishing pad for chemical-mechanical-polishing (CMP), In addition, the present invention relates to a conditioner for a CMP device and a method of manufacturing the same, which have a function of effectively performing the present invention, which has excellent conditioning performance, a long service life, and is easy to manufacture a conditioner, which can significantly reduce a defect rate during manufacturing.

In order to repeat the polishing of the semiconductor wafer, the abrasive particles or the abrasive chips enter the fine holes of the polishing pad to cause eye filling, or the surface of the polishing pad is mirrored due to the heat of chemical reaction between the abrasive particles and the wafer to increase the polishing rate. Is degraded. For this reason, a tool called a conditioner for regenerating the surface of the polishing pad to restore the polishing rate is used. Diamond particles are excellent conditioning materials, and conditioning using diamond particles has been put to practical use.

As for the conditioner of the CMP polishing pad, the wear of the polishing pad can be suppressed as much as possible. Furthermore, the surface of the pad is kept constant so that a predetermined polishing rate is always obtained, and there is no drop of diamond particles. It is required not to cause blindness on the cotton.

There are various methods for fixing the diamond particles to the working surface of the conditioner body using a metal binder, but electrodeposition methods are relatively easy and the diamond particles can be reliably fixed to the working surface of the conditioner body. In the case where the diamond particles are fixed by the electrodeposition method, the fixed surfaces of the diamond particles are left on the working surface of the conditioner main body and coated with an insulating masking material. The main body of the conditioner is immersed in the plating liquid, the particles are placed on the particle fixing surface, and the negative electrode is connected to the main body of the conditioner, and the positive electrode is connected to the plating liquid to perform electroplating to pre-fix the diamond particles. After the diamond particles are preliminarily fixed, most of the particles are preliminarily fixed in a state where a part thereof is folded to the particle fixing surface of the main body. After the fixing is completed, it is preferable to remove the floating particles by gently polishing the surface of the particle layer using alumina grindstone, silicon carbide grindstone, or the like.

After removing the floating diamond grains, the main body of the conditioner is put in the plating liquid again, the negative electrode is connected to the main body, and the positive electrode is connected to the plating liquid to perform plating of the diamond particle fixing surface.

However, in the manufacture of the conventional electrodeposited grindstone, it is difficult to coat with an appropriate masking precision of a fine size when leaving the fixed surface of the diamond particles on the working surface of the conditioner main body and coating it with an insulating masking material. There is a problem that two or more diamond particles enter at the same time, there is a disadvantage that it is difficult to reproduce the same shape because the masking position is shifted.

)이 심하게 발생하는 문제점을 안고 있으며, 피복층의 밀착력이 약하여 이후에 공정에서 벗겨지는 경우가 있는 문제점을 안고 있기 때문에, CMP 패드를 컨디셔닝 하는데 있어서 불량률이 매우 높은 단점을 안고 있다.
In addition, the coating layer is not smoothed and the unevenness (

) Has a problem that occurs badly, and has a problem that the adhesion of the coating layer is weak and may be peeled off in the process later, the defect rate is very high in conditioning the CMP pad.

SUMMARY OF THE INVENTION The present invention has been made to solve the conventional problems, and an object of the present invention is to improve the planarization of a polishing pad for chemical-mechanical-polishing (CMP), and at the same time, to effectively condition the pad. The present invention provides a conditioner for a CMP device and a method for manufacturing the same, which have excellent conditioning performance, long life, and easy manufacture of a conditioner, which can significantly reduce the defect rate during manufacturing.

In the manufacturing method of the conditioner for chemical-mechanical-polishing apparatus of the present invention for solving the above problems, the mask for pattern formation in which a plurality of electrodeposition holes are formed on a circular metal support plate is brought into close contact with the surface on the support plate. Conditioning the flow path for masking the insulator ink through screen printing to secure the fluidity of the slurry occupies an area of 60 to 70% of the total area of the support plate so that the flow path occupies an area of 30 to 40% of the total area of the support plate. Forming a region;
Electrodeposited (artificial) diamond particles having an average particle size of 80 to 120 mesh in the electrodeposition hole of the conditioning region formed by the masking are immersed in a plating solution by a nickel plating method, and 3 to 5 times the average size of the electrodeposited (artificial) diamond particles. Electrodepositing to have an average interval of pears;
After the electrodeposition is completed, removing the masking by chemical precipitation; And
The masking conditioner body is immersed in a nickel plating solution to form a nickel plating layer to have a thickness in the range of 80 to 90% of the electrodeposited diamond particle diameter,
The conditioning regions are arranged radially about the central portion of the support plate.

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The conditioner manufactured according to the method for producing a pad conditioner for a chemical-mechanical-polishing (CMP) device according to the present invention has a function of improving the planarization of the polishing pad for CMP and effectively performing the conditioning of the pad. It has the advantage of excellent performance and long life.

In addition, since the manufacturing method of the present invention performs masking by screen printing, the pattern shape with strict dimensional accuracy can be easily formed with high reproducibility, and the adhesion of the screen-printed insulator ink layer to the conditioner metal is high, and the conditioner is manufactured. Since it is easy, the defective rate at the time of manufacture can be reduced significantly.

1 illustrates an example of a method of manufacturing a pad conditioner for a chemical-mechanical-polishing (CMP) device of the present invention.
2 is a plan view illustrating a conditioner according to an embodiment of the present invention.
3 is a cross-sectional view of a conditioner according to an embodiment of the present invention.
4 to 6 each show one form of conditioners manufactured according to a variant embodiment of the invention.
7 shows an example of a chemical mechanical polishing apparatus having a conditioner according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be described in more detail with reference to the accompanying drawings.

1 is a view showing an example of a method for manufacturing a pad conditioner for a chemical-mechanical-polishing (CMP) device of the present invention, FIG. 2 is a plan view showing a conditioner according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view of a conditioner according to an embodiment of the present invention, and FIGS. 4 to 6 each show one form of conditioners manufactured according to a modified embodiment of the present invention, and FIG. 7 is provided with a conditioner according to an embodiment of the present invention. One example of a chemical mechanical polishing apparatus is shown.

The manufacturing method of the conditioner for chemical-mechanical-polishing apparatus according to the present invention is in close contact with the pattern-forming mask 14a having a pattern formed to form a plurality of electrodeposition holes 18 on the circular metal support plate 12. Masking the insulator ink 16 through screen printing on the surface of the support plate 12 to form a conditioning region (S1, S2); and transferring the electrode to the electrodeposition hole 18 of the conditioning region formed by the masking. Step (S3) to immerse the wear (artificial) diamond particles 20 in the plating solution by the nickel plating method (S3); and after the electrodeposition is completed, removing the masking using a chemical precipitation method (S4); And immersing the conditioner body in which the masking is removed in a nickel plating solution to form a nickel plating layer 22 (S5).

According to the present invention, the particle size of the electrodeposition hole 18 is preferably formed to be in the range of 110 to 160% of the diamond particle diameter d5 for electrodeposition. When the particle size of the electrodeposition hole 18 exceeds 160% of the diamond particle diameter d5, two or more diamond particles are electrodeposited in one electrodeposition hole 18, thereby preventing uniform dispersion of the particles. In addition, when the particle size of the electrodeposition hole 18 is less than 110%, there is a problem that electrodeposition of diamond particles is difficult to be made.

According to this invention, it is preferable that the thickness of the said mask and the masking thickness of an insulator ink are 50 to 150% of the said electrodeposition diamond particle diameter d5. If the thickness is less than 50% or more than 150%, there is a problem that uniform electrodeposition of diamond particles cannot be achieved.

According to the present invention, the electrodeposited (artificial) diamond particles are preferably those having an average particle size of 80 to 120 mesh.

According to the present invention, the plating thickness (d3) of the nickel plated layer is preferably plated so as to be in the range of 80 to 90% of the electrode particle diameter (d5). If it is less than 80%, the degree of adhesion of the electrodeposited diamond particles is weakened, and the life of the conditioner is shortened. If it exceeds 90%, most of the electrodeposited and fixed diamond particles are enclosed, so that protrusions of the diamond particles are insignificant. Or it is completely wrapped there is a disadvantage that the polishing efficiency is significantly reduced.

According to the present invention, the conditioning regions 24 are preferably formed to occupy an area of 60 to 70% of the total area of the support plate 12, and are arranged radially about the central portion of the support plate.

By forming the conditioning region, the slurry flow paths 32, 31, 32, and 34 for smooth external discharge of the slurry generated during the polishing process are formed, and the area is 30 to 40% of the total area of the support plate 12. It has an area of. The formation rate of the slurry flow path is determined according to the formation rate of the plurality of conditioning regions.

The shape of the slurry flow path also depends on the shape or arrangement of the conditioning regions.

According to the present invention, the average spacing d4 between the electrodeposited diamond particles is preferably arranged to be 3 to 5 times the average particle size of the plurality of diamond particles in order to increase the polishing efficiency.

According to the present invention, a metal is manufactured by the manufacturing method disclosed above, and has a rotatable, rotating center portion, an intermediate portion surrounding the rotation center portion, and an edge portion surrounding the intermediate portion, as shown in FIG. A support plate 12; A plurality of conditioning regions (24) occupying an intermediate portion of the metal support plate (12), the plurality of hard particles (22) being densely arranged; A flow path (30, 32, 34) which occupies the intermediate portion and the rotational center portion and the edge portion which are not occupied by the plurality of conditioning regions and ensures fluidity of the slurry;

The conditioning regions occupy an area of 60 to 70% of the total area of the support plate and are radially arranged in the intermediate portion, and the average spacing of the plurality of hard particles electrodeposited and arranged in the conditioning regions is 3 to 5 times the average size of the hard particles,

Disclosed is a conditioner for a chemical-mechanical-polishing apparatus, wherein the flow path occupies an area of 30 to 40% of the total area of the support plate and is formed to partition the plurality of conditioning regions.

The conditioning regions have a width that gradually increases from the center of rotation to the edge and extends linearly, and the pole gradually increases and curves toward the edge from the center of rotation, and the edge at the center of rotation. The width of the support plate is constant and curved, and the curved direction of the support plate extending in the direction of rotation and the width is formed in any one of the form.

The manufacturing method of the present invention disclosed above will be described in more detail with reference to FIG. 1. First, a metal support plate 12 and a patterning mask 14a for preparing a conditioner are prepared.

The prepared patterning mask 14a is brought into close contact with one surface of the metal support plate 12 (S1), and the insulator ink 16 is masked on the patterning mask 14a by using a screen printing method (S2). In this case, as illustrated in FIGS. 2 and 4 to 6, the conditioning region 24 and the electrodeposition hole 18 are formed according to the pattern shape of the patterning mask.

The patterned mask uses a patterned mask to form the particle size of the electrodeposition hole 18 to be in the range of 110 to 160% of the electrodeposited diamond particle size d5.

The thickness d1 of the mask and the masking thickness of the insulator ink have a range of 50 to 150% of the electrode particle diameter d5.

After the electrodeposition hole 18 is formed, a mask 14b having a pattern opposite to the patterning mask 14a used in the masking step is prepared and brought into close contact with each other, and the masked metal support plate 12 has an average particle size. It is immersed in a nickel plating solution containing diamond particles 20, which are 80 to 120 mesh, and subjected to primary plating so that the diamond particles 20 are electrodeposited in the electrodeposition holes 18. (S3)

After the primary plating process is completed, the diamond particles 20 and the masking insulating ink 16 which are not electrodeposited in the electrodeposition hole 18 are removed using a chemical treatment method (S4).

After the step S4, the finished metal support plate body 12 is immersed in a nickel plating solution to connect a negative electrode to the metal support plate body, and a positive electrode is connected to the nickel plating solution to form a nickel (Ni) plating layer on the diamond particle fixing surface ( 22) to fix the diamond particles. (S5) Here, the thickness of the nickel plating layer 22 on the upper side of the diamond particles electrodeposited to the upper surface of the metal support plate is 80 to 90% of the size of the diamond particles In order to plate as much as possible, the patterning mask 14c is positioned and plated.

The average spacing d4 between the fixed diamond particles 20, 20a, 20b, 20c, and 20d is arranged to be 3 to 5 times the average size d5 of the plurality of diamond particles. See Figure 3)

The conditioning regions 24 formed in the conditioner manufactured as described above are formed to occupy an area of 60 to 70% of the total area of the support plate 12, and are arranged radially about the central portion of the support plate.

By forming the conditioning region, the slurry flow paths 30, 32, and 34 for smooth external discharge of the slurry generated during the polishing process are formed, and the area has an area of 30 to 40% of the total area of the support plate. . The formation rate of the slurry flow path is determined according to the formation rate of the plurality of conditioning regions.

The shape of the slurry flow path also depends on the shape or arrangement of the conditioning regions.

The conditioner according to the present invention manufactured according to the above manufacturing process as shown in Figure 2, the conditioning area is gradually wider from the center of rotation to the edge toward the edge may be a linear extension form, As shown in Figure 4, the width from the rotation center portion to the edge portion may be gradually enlarged and curved in shape.

In addition, as shown in FIG. 5, the width may be constant and curved in a direction extending from the center of rotation to the edge portion, and as shown in FIG. 6, the width of the support plate extends in the direction of rotation of the support plate. It may be formed in a constant curved extension form.

Each conditioning region is regularly arranged at a predetermined distance d1 in the rotational direction of the support plate so as to sufficiently secure the fluidity of the slurry between the conditioning regions 24. In addition, each of the conditioning regions 24 is spaced at a constant distance d2 from the edge of the support plate 12 and spaced at a constant distance d3 from the center of the support plate so as to ensure sufficient fluidity of the slurry into and out of the conditioner 10. do. Accordingly, in the support plate, a plurality of conditioning regions made of hard particles (diamond particles) are arranged in a rotational direction at a predetermined interval d1, and the plurality of conditioning regions are in a form occupying an intermediate portion between the center and the edge of the support plate. .

With respect to the center of rotation, the middle, and the edge of which the reference numerals are not shown in the accompanying drawings of the present invention, the center of rotation means a central portion of the support plate on which the conditioning area is not maintained, which maintains a constant distance d3. The part means an intermediate part of the rotation center and the edge part where the conditioning area is formed, and the edge part means an edge of the support plate having a predetermined distance d2 around the support plate.

The width gradually increases from the center of rotation to the edge, and extends linearly, and the pole gradually increases and curves from the rotation center toward the edge, and the width is constant and curved from the rotation center toward the edge. It is formed in any one of an extended form and a curved extension extending in the direction of rotation of the support plate and constant width.

In the present invention, the conditioner was prepared according to the manufacturing method described above, and compared with the conditioner used in the prior art, the present invention is not limited to the following experimental examples.

The insulating ink was coated by screen printing leaving the fixed surface of the diamond grains on the working surface of the conditioner body. The thickness of the masking was 80% of the 100 mesh diamond particle size to be electrodeposited, and the diameter of the unmasked hole, that is, the electrodeposition hole 18, was set to 140% of the diamond particle size to be electrodeposited to deposit the diamond particles. After that, the main body of the conditioner was electroplated by connecting an anode to a plating solution, and diamond particles were preliminarily fixed. By pre-fixing the diamond particles, most of the particles are pre-fixed in a state where a part thereof is in contact with the particle-fixing surface of the main body, but even when floating particles exist due to adhesion in a state not in contact with the particle-fixing surface of the main body. Therefore, after finishing the preliminary fixing, it is preferable to remove the floating particles by gently polishing the surface of the particle layer using alumina grindstone, silicon carbide grindstone, or the like.

After removing the floating diamond particles, the main body of the conditioner was again immersed in the plating liquid, and the negative electrode was connected to the main body, and the positive electrode was connected to the plating liquid to perform final Ni plating of the diamond particle fixing surface.

The shape of the conditioner in Experimental Example 1 was to have an electrodeposition, that is, the conditioning region is a spiral shape as shown in Figure 4, in Experimental Example 2 to have a shape as shown in FIG.

In each of Experimental Example 1 and Experimental Example 2, a slurry flow path was formed in accordance with the formed conditioning region.

In Experimental Example 1 and Experimental Example 2, all other manufacturing conditions were the same except for the shape of the conditioning region.

The conventional example used the same shape conditioner manufactured according to the conventional manufacturing method and sold commercially. The conditioner 10 of Experimental Example 1, Experimental Example 2, and a conventional product were installed in a polishing apparatus as shown in FIG. 7 to perform pad conditioning of a chemical-mechanical-polishing apparatus used for wafer processing of semiconductors. The results are shown in Table 1 below.

division Experimental Example 1 Experimental Example 2 Conventional products Polishing Speed Ratio 1.35 1.30 One Conditioning Speed
(Μm / h) 32 30 12 Conditioner Life
(hr) 580 570 160 Wafer Surface Roughness
(Nm) 0.38 0.39 0.43 Scratch count of wafer One 2 7 Surface condition of the pad Almost no grinding marks Almost no grinding marks Many grinding marks

The pad polishing rate ratio, conditioning speed and conditioner life of Experimental Example 1 and Experimental Example 2 were significantly higher than those of the conventional products, and Experimental Examples 1 and 2 were significantly lower than those of the conventional products even in the case of wafer surface roughness and the number of scratches. In the case of using the conditioners of Experimental Example 1 and Experimental Example 2, the grinding marks of the pads were hardly seen, but the grinding marks appeared on the surface of the pads.

As described above, the present invention masks by screen printing, so that a pattern shape with strict dimensional accuracy can be easily formed with high reproducibility, and the adhesion of the screen printed masking ink layer to the conditioner metal is high, and 80 to 120 mesh diamond particles electrodeposited to the conditioner metal are dispersed one by one in the unmasked place, that is, in the electrodeposition hole 18. This improves the flattening of the polishing pad for CMP and effectively regulates the pad. Furthermore, it provides excellent conditioning performance, long life, and easy manufacture of the conditioner. Can be.

10: conditioner 12: metal support plate,
14a, 14b, 14c: patterning mask 16: insulator ink
18: electrodeposition hole
20, 20a, 20b, 20c, 20d: diamond particles
22: nickel plated layer 24: conditioning area
30, 31, 32, 34: slurry flow path

Claims (9)

A flow path for securing the fluidity of the slurry by contacting the insulator ink through the screen printing on the surface of the support plate, with a pattern forming mask in which a plurality of electrodeposition holes are formed on the circular metal support plate. Forming a conditioning area to occupy an area of 60 to 70% of the total area of the support plate to occupy an area of 30 to 40% of the area of the support plate;
Electrodeposited (artificial) diamond particles having an average particle size of 80 to 120 mesh in the electrodeposition hole of the conditioning region formed by the masking are immersed in a plating solution by a nickel plating method, and 3 to 5 times the average size of the electrodeposited (artificial) diamond particles. Electrodepositing to have an average interval of pears;
After the electrodeposition is completed, removing the masking by chemical precipitation; And
The masking conditioner body is immersed in a nickel plating solution to form a nickel plating layer to have a thickness in the range of 80 to 90% of the electrodeposited diamond particle diameter,
And said conditioning zones are arranged radially about the central portion of said support plate.
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