KR101111063B1 - Apparatus for joining of substrate - Google Patents

Apparatus for joining of substrate Download PDF

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KR101111063B1
KR101111063B1 KR1020080138517A KR20080138517A KR101111063B1 KR 101111063 B1 KR101111063 B1 KR 101111063B1 KR 1020080138517 A KR1020080138517 A KR 1020080138517A KR 20080138517 A KR20080138517 A KR 20080138517A KR 101111063 B1 KR101111063 B1 KR 101111063B1
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chamber
upper chamber
substrate
support
screw
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KR20100079920A (en
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황재석
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엘아이지에이디피 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133354—Arrangements for aligning or assembling substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/28—Adhesive materials or arrangements

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  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격조절을 함께 수행되도록 한 기판합착장치가 개시된다. 기판합착장치는 하부기판을 지지하는 하부챔버;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함한다.Disclosed is a substrate bonding apparatus for performing opening and closing of a chamber and adjusting a distance between two substrates by one driving unit. The substrate bonding apparatus may include: a lower chamber supporting a lower substrate; an upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; disposed inside the upper chamber and spaced apart from the upper chamber, An upper support plate disposed outside the upper chamber and spaced apart from the upper chamber to support the upper plate through the upper chamber; and opening and closing the upper and lower chambers to open and close the processing space. And a driving unit for elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate.

Description

기판합착장치{Apparatus for joining of substrate}Apparatus for joining of substrate}

본 발명은 기판합착장치에 관한 것으로, 더욱 상세하게는 두 기판을 합착하는 기판합착장치에 관한 것이다.The present invention relates to a substrate bonding apparatus, and more particularly to a substrate bonding apparatus for bonding two substrates.

정보화 사회가 발전함에 따라 디스플레이 장치에 대한 요구도 다양한 형태로 증가되어 왔다. 이에 근래에는 LCD(Lipuid Crystal Display Device), PDP(Plasma Display Panel), ELD(Electro Luminescent Display), VFD(Vacuum Fluorescent Display)등 여러 가지 평판 디스플레이 장치가 연구되어 왔고 그 일부는 이미 실생활에 널리 사용되고 있다.As the information society has developed, the demand for display devices has increased in various forms. Recently, various flat panel display devices such as LCD (Lipuid Crystal Display Device), PDP (Plasma Display Panel), ELD (Electro Luminescent Display), VFD (Vacuum Fluorescent Display) have been studied and some of them are widely used in real life. .

그 중 LCD의 경우에는 CRT(Cathode Ray Tube)에 비하여 화질이 우수하고 경량, 박형, 저소비 전력의 특징에 따른 장점으로 인하여 이동형 화상 표시장치의 용도로 많이 사용되고 있다.Among them, LCDs are being used for mobile image display devices because of their excellent image quality compared to CRT (Cathode Ray Tube) and the advantages of light weight, thinness, and low power consumption.

이러한 LCD는 전극이 형성되어 있는 TFT(Thin Film Transistor) 기판과 형광체가 도포된 CF(Color filter) 기판 사이에 액정(Liquid Crystal)을 주입하여 형성된다. 두 기판 사이에는 소정 간격으로 두 기판 사이의 간격을 유지하기 위한 간격재(Spacer)가 배치되며, 두 기판의 외주면에는 액정 물질을 누출을 막기 위한 밀봉 재(Sealer)가 배치된다.The LCD is formed by injecting a liquid crystal between a TFT (Thin Film Transistor) substrate on which an electrode is formed and a CF (Color filter) substrate coated with phosphors. Spacers are disposed between the two substrates to maintain a gap between the two substrates at predetermined intervals, and a sealer is disposed on the outer circumferential surfaces of the two substrates to prevent leakage of the liquid crystal material.

따라서 LCD를 제조함에 있어서, TFT기판 및 CF 기판을 각각 제조한 후에 양 기판을 합착하고 그 사이의 공간에 액정 물질을 주입하는 공정이 필수적으로 필요하며 이중 기판을 합착시키는 공정은 LCD의 품질을 결정하는 중요한 공정 중에 하나이다.Therefore, in manufacturing LCD, after manufacturing TFT substrate and CF substrate, it is necessary to join both substrates and inject liquid crystal material into the space between them, and the process of bonding double substrates determines the quality of LCD. Is one of the important processes.

일반적인 기판합착장치는 진공이 형성되는 챔버의 내부에서 두 기판의 합착 공정을 수행한다. 챔버는 상부챔버와 하부챔버로 분리되며, 상부챔버와 하부챔버 중 어느 하나를 승강시켜 두 기판을 반입, 또는 반출시키도록 구성된다. 따라서 두 챔버 중 어느 하나를 승강시키기 위한 개폐 구동부가 마련되어야 한다.A general substrate bonding apparatus performs a bonding process of two substrates in a chamber in which a vacuum is formed. The chamber is divided into an upper chamber and a lower chamber, and is configured to elevate either one of the upper chamber and the lower chamber to bring in or take out two substrates. Therefore, the opening and closing drive unit for lifting up and down either chamber should be provided.

또한 챔버 내부에서 두 기판의 정렬을 위해 두 기판의 간격조절이 필요하다. 따라서 개폐 구동부와는 별도로 두 기판 중 어느 하나를 승강시키는 간격조절 구동부가 마련되어야 한다.It is also necessary to adjust the spacing of the two substrates to align the two substrates in the chamber. Therefore, apart from the opening and closing drive unit, a spacing control unit for lifting one of the two substrates should be provided.

하지만, 종래의 기판합착장치는 챔버의 개폐와 두 기판의 간격조절을 위한 구동계가 각각 별도로 마련된다. 이에 따라 초기설비 투자비용이 증가되는 문제점이 있다.However, the conventional substrate bonding apparatus is provided with a drive system for opening and closing the chamber and adjusting the distance between the two substrates. Accordingly, there is a problem in that the initial investment cost increases.

또한 종래의 기판합착장치는 챔버와 기판을 별도의 구동부에 의해 지지하므로, 두 기판의 정렬이 번거로우며, 정렬오차가 발생되는 문제점이 있다.In addition, since the conventional substrate bonding apparatus supports the chamber and the substrate by separate driving units, the alignment of the two substrates is cumbersome, and there is a problem that alignment errors occur.

본 발명의 목적은 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격조절 을 함께 수행되도록 한 기판합착장치를 제공하기 위한 것이다.An object of the present invention is to provide a substrate bonding apparatus to perform the opening and closing of the chamber and the control of the distance between the two substrates by one drive unit.

기판합착장치는 하부기판을 지지하는 하부챔버;상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;및 상기 상부챔버를 승강시켜 상기 처리공간을 개폐시키며, 상기 상정반지지부를 승강시켜 상기 하부기판에 대한 상기 상부기판의 간격을 조절하는 구동부;를 포함한다.The substrate bonding apparatus may include: a lower chamber supporting a lower substrate; an upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; disposed inside the upper chamber and spaced apart from the upper chamber, An upper support plate disposed outside the upper chamber and spaced apart from the upper chamber to support the upper plate through the upper chamber; and opening and closing the upper and lower chambers to open and close the processing space. And a driving unit for elevating the upper support unit to adjust a distance between the upper substrate and the lower substrate.

상기 구동부는 회전동력을 제공하는 구동모터;상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되며, 상기 구동모터에 의해 회전되어 상기 상정반지지부를 승강시키는 스크류;상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 상기 승강부재;및 상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드;를 더 포함할 수 있다.A driving motor providing rotational power; a screw coupled to the upper support part through the lower chamber and the upper chamber, the screw being rotated by the driving motor to elevate the upper support part; An elevating member disposed below and screwed to the screw and supporting the upper chamber according to the rotation of the screw to elevate the upper chamber according to the rotation of the screw; and fixed to the lower chamber, and the elevating member And an elevating guide penetrating the upper chamber and the upper support plate and guiding elevating the upper chamber and the elevating member.

상기 구동부는 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함할 수 있다.The driving unit may further include a buffer member disposed between the upper chamber and the lifting member.

상기 기판합착장치는 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a first hermetic member disposed between the lower chamber and the upper chamber.

상기 상정반지지부는 상기 상부챔버의 상측에 배치되며, 상기 구동부에 의해 승강되는 지지판;및 상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함할 수 있다.The upper support part may be disposed on an upper side of the upper chamber, and may include a support plate that is lifted by the driving unit; and a support shaft extending from the support plate and fastened to the upper plate by passing through the upper chamber.

상기 기판합착장치는 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함할 수 있다.The substrate bonding apparatus may further include a second hermetic member disposed between the support plate and the upper chamber.

상기 기판합착장치는 상기 하부챔버를 지지하는 프레임;및 상기 프레임에 지지되며, 상기 구동부를 평면 상에서 이동시키는 정렬스테이지를 더 포함할 수 있다.The substrate bonding apparatus may further include a frame supporting the lower chamber, and an alignment stage supported by the frame and moving the driving unit on a plane.

상기 기판합착장치는 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함할 수 있다.The substrate bonding apparatus may further include a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate.

본 발명에 따른 기판합착장치는 하나의 구동부에 의해 챔버의 개폐와 두 기판의 간격을 조절하므로, 초기 설비투자비용이 절감되며, 두 기판의 정렬오차를 줄일 수 있는 효과가 있다. Since the substrate bonding apparatus according to the present invention controls the opening and closing of the chamber and the distance between the two substrates by one driving unit, the initial equipment investment cost is reduced and the alignment error of the two substrates can be reduced.

이하, 본 실시예에 따른 기판합착장치에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다. Hereinafter, the substrate bonding apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이고, 도 2는 본 실 시예에 따른 기판합착장치를 나타낸 단면도이다. 도 1 및 도 2를 참조하면, 기판합착장치는 프레임(110), 정렬스테이지(120), 하부챔버(131), 하정반(132), 상부챔버(135), 상정반(136), 상정반지지부(140) 및 구동부(150)를 포함한다. 1 is a perspective view showing a substrate bonding apparatus according to the present embodiment, Figure 2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment. 1 and 2, the substrate bonding apparatus includes a frame 110, an alignment stage 120, a lower chamber 131, a lower plate 132, an upper chamber 135, an upper plate 136, and an upper ring. The branch 140 and the driving unit 150 is included.

프레임(110)은 복수로 마련되어 정렬스테이지(120)와 하부챔버(131)의 테두리부에 배치된다. The frame 110 is provided in plural and disposed at the edge of the alignment stage 120 and the lower chamber 131.

정렬스테이지(120)는 프레임(110)의 내측에 배치되어 프레임(110)에 지지된다. 정렬스테이지(120)는 구동부(150)를 지지하며, 구동부(150)를 도 1에 표기된 x축방향 및 y축방향으로 이동시킨다. 이러한 정렬스테이지(120)는 본 출원인에 의해 출원되어 공개된 "공개번호 10-2006-0055703;기판 합착기"에 개시된 바 있으므로, 상세한 설명은 생략하도록 한다.The alignment stage 120 is disposed inside the frame 110 and is supported by the frame 110. The alignment stage 120 supports the driving unit 150 and moves the driving unit 150 in the x-axis direction and the y-axis direction shown in FIG. 1. Since the alignment stage 120 has been disclosed in the "Publication No. 10-2006-0055703 (substrate bonding machine)" filed and published by the applicant, detailed description thereof will be omitted.

하부챔버(131)는 정렬스테이지(120)의 상측에 배치되어 프레임(110)에 지지된다. 하정반(132)은 하부챔버(131)의 내측에 배치되며, 하부챔버(131)에 지지된다. 하정반(132)은 챔버(130)의 내부로 반입되는 하부기판(S1)을 지지한다. The lower chamber 131 is disposed above the alignment stage 120 and supported by the frame 110. The lower plate 132 is disposed inside the lower chamber 131 and is supported by the lower chamber 131. The lower surface plate 132 supports the lower substrate S1 carried into the chamber 130.

상부챔버(135)는 하부챔버(131)의 상측에 배치되며, 하부챔버(131)와 함께 처리공간을 제공한다. 상부챔버(135)는 처리공간(130a)의 개방시 구동부(150)에 의해 지지되고, 처리공간(130a)의 밀폐시 하부챔버(131)에 지지된다. 상정반(136)은 상부챔버(135)의 내측에 배치되며, 상부챔버(135)로부터 이격된다. 도시되지 않았지만 하정반(132) 및 상정반(136)은 기판을 지지하는 진공척, 정전척, 마그네틱척 중 어느 하나를 각각 포함할 수 있다.The upper chamber 135 is disposed above the lower chamber 131 and provides a processing space together with the lower chamber 131. The upper chamber 135 is supported by the driving unit 150 when the processing space 130a is opened, and is supported by the lower chamber 131 when the processing space 130a is closed. The upper surface plate 136 is disposed inside the upper chamber 135 and spaced apart from the upper chamber 135. Although not shown, the lower plate 132 and the upper plate 136 may each include any one of a vacuum chuck, an electrostatic chuck, and a magnetic chuck supporting the substrate.

하정반(132)과 상정반의 사이에는 간격감지기(133)가 배치된다. 간격감지 기(133)는 두 기판(S1, S2)의 개략 정렬 이후 두 기판(S1, S2)의 정밀 정렬을 위한 두 기판(S1, S2)의 간격을 감지한다. 간격감지기(133)는 상정반의 승강에 따라 상정반(136)에 접촉되어 접촉신호를 발생시킨다. 이 접촉신호는 이후 설명될 구동모터(151)의 제어신호로 사용된다. 여기서, 도 1 내지 도 2에서는 간격감지기(133)를 접촉식 센서로 도시하고 설명하고 있으나, 다른 실시예로 비접촉식 센서로 채택될 수 있다. The gap detector 133 is disposed between the lower plate 132 and the upper plate. The gap detector 133 detects a gap between the two substrates S1 and S2 for precise alignment of the two substrates S1 and S2 after the rough alignment of the two substrates S1 and S2. The gap sensor 133 is in contact with the upper plate 136 in accordance with the lifting of the upper plate to generate a contact signal. This contact signal is used as a control signal of the drive motor 151 to be described later. Here, in FIGS. 1 and 2, the gap sensor 133 is illustrated and described as a contact sensor, but may be adopted as a non-contact sensor in another embodiment.

상정반지지부(140)는 지지판(141)과 지지축(142)을 포함한다. 지지판(141)은 상부챔버(135)의 외측에 배치되며, 상부챔버(135)로부터 이격된다. 지지축(142)은 지지판(141)으로부터 연장되고, 상부챔버(135)를 관통하여 상정반(136)에 체결된다. The upper half support part 140 includes a support plate 141 and a support shaft 142. The support plate 141 is disposed outside the upper chamber 135 and spaced apart from the upper chamber 135. The support shaft 142 extends from the support plate 141 and is fastened to the upper plate 136 through the upper chamber 135.

구동부(150)는 상부챔버(135)를 승강시켜 처리공간(130a)을 개폐시키며, 상정반지지부(140)를 승강시켜 하부기판(S1)에 대한 상부기판(S2)의 간격을 조절한다. 이러한 구동부(150)는 구동모터(151), 스크류(152), 승강부재(153) 및 승강가이드(154)를 포함한다. The driving unit 150 raises and lowers the upper chamber 135 to open and close the processing space 130a, and raises and lowers the upper support unit 140 to adjust the distance of the upper substrate S2 to the lower substrate S1. The driving unit 150 includes a driving motor 151, a screw 152, a lifting member 153, and a lifting guide 154.

구동모터(151)는 정렬스테이지(120)에 지지되며, 회전동력을 제공한다. 구동모터는 정회전 및 역회전이 가능하도록 마련된다. The drive motor 151 is supported by the alignment stage 120 and provides a rotational power. The drive motor is provided to enable forward and reverse rotation.

스크류(152)는 하부챔버(131)와 상부챔버(135)를 관통하며, 지지판(141)에 나사결합되어 지지판(141)을 지지한다. 스크류(152)는 구동모터(151)에 의해 회전되어 지지판(141)을 승강시킨다. 스크류(152)는 구동모터(151)의 정회전에 따라 정회전되어 지지판(141)을 상승시키며, 구동모터(151)의 역회전에 따라 역회전되어 지지판(141)을 하강시킨다. The screw 152 penetrates the lower chamber 131 and the upper chamber 135 and is screwed to the support plate 141 to support the support plate 141. The screw 152 is rotated by the drive motor 151 to elevate the support plate 141. The screw 152 is rotated forward according to the forward rotation of the drive motor 151 to raise the support plate 141, and is reversely rotated according to the reverse rotation of the drive motor 151 to lower the support plate 141.

승강부재(153)는 상부챔버(135)의 하측에 배치되어 스크류(152)에 나사결합된다. 승강부재(153)는 스크류(152)의 회전에 따라 승강된다. 승강부재(153)는 스크류(152)의 정회전시 상승되어 상부챔버(135)를 지지하여 상부챔버(135)를 상승시키며, 스크류(152)의 역회전시 하강되어 상부챔버(135)를 하부챔버(131) 측으로 하강시킨다. The elevating member 153 is disposed below the upper chamber 135 and screwed to the screw 152. The elevating member 153 is elevated by the rotation of the screw 152. The elevating member 153 is raised during forward rotation of the screw 152 to support the upper chamber 135 to raise the upper chamber 135, and is lowered during reverse rotation of the screw 152 to lower the upper chamber 135. Lower to (131) side.

승강부재(153)와 상부챔버(135)의 사이에는 완충부재(155)가 배치된다. 완충부재(155)는 스크류(152)의 회전에 따라 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다. A buffer member 155 is disposed between the elevating member 153 and the upper chamber 135. The shock absorbing member 155 mitigates the shock that may occur in the upper chamber 135 and the elevating member 153 which are in contact with each other according to the rotation of the screw 152, and the upper chamber 135 and the elevating member 153 Prevent wear.

승강가이드(154)는 하부챔버(131)에 고정되며, 승강부재(153), 상부챔버(135) 및 상정반지지부(140)를 관통한다. 승강가이드(154)는 스크류(152)에 나사결합된 상부챔버(135) 및 승강부재(153)가 스크류(152)의 회전에 따라 회전되지 않도록 하며, 상부챔버(135)와 승강부재(153)의 승강을 안내한다.The lifting guide 154 is fixed to the lower chamber 131 and penetrates the lifting member 153, the upper chamber 135, and the upper support part 140. The elevating guide 154 prevents the upper chamber 135 and the elevating member 153 screwed to the screw 152 from being rotated according to the rotation of the screw 152, and the upper chamber 135 and the elevating member 153. Guide your ascent to and from.

한편, 하부챔버(131)와 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 하부챔버(131)와 상부챔버(135)의 사이로 처리공간(130a)의 기밀이 새어나가는 것을 방지하는 제1 기밀부재(134)가 배치된다. 제1 기밀부재(134)로는 오-링이 사용된다. Meanwhile, between the lower chamber 131 and the upper chamber 135 to prevent leakage of the airtightness of the processing space 130a between the lower chamber 131 and the upper chamber 135 when the processing space 130a is closed. The first hermetic member 134 is disposed. An o-ring is used as the first hermetic member 134.

또한, 지지판(141)과 상부챔버(135)의 사이에는 처리공간(130a)의 밀폐시 지지축(142)이 관통되는 관통홀(142a)로부터 처리공간(130a)의 기밀이 새어나가는 것 을 방지하는 제2 기밀부재(137)가 배치된다. 제2 기밀부재(137)로는 벨로우즈가 사용된다.In addition, between the supporting plate 141 and the upper chamber 135 to prevent leakage of the airtightness of the processing space 130a from the through hole 142a through which the support shaft 142 penetrates when the processing space 130a is closed. The second hermetic member 137 is disposed. Bellows are used as the second hermetic member 137.

도시되지 않았지만, 하부기판(S1)과 상부기판(S2)에는 두 기판(S1, S2)의 정렬을 위한 얼라인마크가 각각 형성되어 제공될 수 있으며, 기판합착장치는 두 얼라인마크의 일치여부를 촬영하는 카메라를 포함할 수 있다. 이러한 얼라인마크 및 카메라는 이미 공지된 기술이므로 상세한 설명은 생략하도록 한다. Although not shown, an alignment mark for aligning the two substrates S1 and S2 may be provided on the lower substrate S1 and the upper substrate S2, respectively, and the substrate bonding apparatus may be aligned with the two alignment marks. It may include a camera for photographing. Since the alignment mark and the camera are already known technologies, detailed descriptions thereof will be omitted.

이하, 본 실시예에 따른 기판처리장치의 작동에 대해 첨부된 도면을 참조하여 상세히 설명하도록 한다. Hereinafter, the operation of the substrate treating apparatus according to the present embodiment will be described in detail with reference to the accompanying drawings.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다. 도 3을 참조하면, 상부챔버(135)는 승강부재(153)에 지지되어 하부챔버(131)로부터 이격된다. 상부챔버(135)가 하부챔버(131)로부터 이격됨에 따라 처리공간(130a)은 개방된다. 개방된 처리공간(130a)으로 하부기판(S1)과 상부기판(S2)이 반입된다. 하부기판(S1)은 하정반(132)에 지지되고 상부기판(S2)은 상정반(136)에 지지되어 서로 대향한다.3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment. Referring to FIG. 3, the upper chamber 135 is supported by the elevating member 153 and spaced apart from the lower chamber 131. As the upper chamber 135 is spaced apart from the lower chamber 131, the processing space 130a is opened. The lower substrate S1 and the upper substrate S2 are loaded into the open processing space 130a. The lower substrate S1 is supported by the lower plate 132 and the upper substrate S2 is supported by the upper plate 136 to face each other.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다. 도 4를 참조하면, 처리공간(130a)의 밀폐를 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 4, the drive motor 151 reversely rotates the screw 152 to seal the processing space 130a. As the screw 152 is reversely rotated, the support plate 141 and the lifting member 153 are lowered together. In this case, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the lowering of the support plate 141 and the lifting member 153.

승강부재(153)에 지지되는 상부챔버(135)는 승강부재(153)와 함께 하강된다. 상부챔버(135)는 제1 기밀부재(134)에 접촉되며, 하부챔버(131)에 의해 지지된다. 이와 같이 상부챔버(135)의 하강에 따라 처리공간(130a)은 밀폐되며 제1 기밀부재(134)는 처리공간(130a)의 기밀을 유지시킨다. The upper chamber 135 supported by the elevating member 153 is lowered together with the elevating member 153. The upper chamber 135 is in contact with the first hermetic member 134 and is supported by the lower chamber 131. As the upper chamber 135 descends as described above, the processing space 130a is sealed and the first airtight member 134 maintains the airtightness of the processing space 130a.

처리공간(130a)이 밀폐되면 두 기판(S1, S2)의 개략 정렬이 이루어진다. 즉, 카메라(미도시)는 두 얼라인마크(미도시)의 일치 여부를 촬영한다. 카메라(미도시)의 촬영결과에 따라 정렬스테이지(120)는 구동부(150)를 평면 상(x축방향 또는, y축방향)으로 이동시킨다. 구동부(150)의 위치가 이동됨에 따라 스크류(152)에 지지되는 지지판(141)의 위치가 이동되고, 지지판(141)의 위치가 이동됨에 따라 지지축(142)에 의해 지지되는 상정반(136)의 위치가 이동된다. When the processing space 130a is sealed, the two substrates S1 and S2 are roughly aligned. That is, the camera (not shown) photographs whether two alignment marks (not shown) coincide. According to the photographing result of the camera (not shown), the alignment stage 120 moves the driving unit 150 in the plane (x-axis direction or y-axis direction). As the position of the driving unit 150 is moved, the position of the support plate 141 supported by the screw 152 is moved, and the upper plate 136 supported by the support shaft 142 as the position of the support plate 141 is moved. ) Position is moved.

이와 같이 상정반(136)의 위치를 조절하여 하정반(132)에 지지되는 하부기판(S1)에 대한 상부기판(S2)의 위치를 조절하여 두 기판을 정렬한다. (이하, 기판 정렬동작)As such, by adjusting the position of the upper plate 136, the two substrates are aligned by adjusting the position of the upper substrate S2 with respect to the lower substrate S1 supported by the lower plate 132. (Hereinafter, substrate alignment operation)

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다. 도 5를 참조하면, 두 기판(S1, S2)의 정밀 정렬을 위해 구동모터(151)는 스크류(152)를 역회전시킨다. 스크류(152)가 역회전됨에 따라 지지판(141)과 승강부재(153)는 함께 하강한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 하강을 안내한다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 5, the drive motor 151 reversely rotates the screw 152 to precisely align the two substrates S1 and S2. As the screw 152 is reversely rotated, the support plate 141 and the lifting member 153 are lowered together. In this case, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the lowering of the support plate 141 and the lifting member 153.

상부챔버(135)는 하부챔버(131)에 의해 지지된 상태이므로, 승강부재(153)는 하강되어 상부챔버(135)로부터 이격된다. 지지판(141)이 하강됨에 따라 지지 축(142)에 의해 지지되는 상정반(136)은 함께 하강한다. 상정반(136)이 하강됨에 따라 상정반(136)은 하정반(132)에 배치된 간격감지기(133)에 접촉된다. 간격감지기(133)는 접촉신호를 발생하며, 구동모터(151)는 접촉신호의 발생에 따라 회전이 정지된다. 이때 두 기판(S1, S2)의 간격은 수 ㎛ ~ 수백 ㎛ 로 형성된다.Since the upper chamber 135 is supported by the lower chamber 131, the elevating member 153 is lowered to be spaced apart from the upper chamber 135. As the support plate 141 is lowered, the upper plate 136 supported by the support shaft 142 descends together. As the upper plate 136 is lowered, the upper plate 136 is in contact with the gap sensor 133 disposed on the lower plate 132. The gap sensor 133 generates a contact signal, and the driving motor 151 is stopped from rotating according to the generation of the contact signal. At this time, the interval between the two substrates (S1, S2) is formed to a few μm ~ several hundred μm.

이와 같이 두 기판(S1, S2)이 근접하면 상술한 기판 정렬동작에 따라 두 기판의 정밀 정렬이 이루어진다. As such, when the two substrates S1 and S2 are close to each other, precise alignment of the two substrates is performed according to the substrate alignment operation described above.

두 기판(S1, S2)의 정밀 정렬이 이루어지면, 상정반(136)은 상부기판(S2)의 지지상태를 해제한다. 상부기판(S2)은 하부기판(S1)으로 자유낙하하여 하부기판(S1)에 접촉되고, 두 기판(S1, S2)은 합착된다. When the precise alignment of the two substrates (S1, S2) is made, the upper plate 136 releases the support state of the upper substrate (S2). The upper substrate S2 freely falls into the lower substrate S1 to contact the lower substrate S1, and the two substrates S1 and S2 are bonded to each other.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다. 도 6을 참조하면, 합착된 두 기판(S1, S2)의 반출을 위해 구동모터(151)는 스크류(152)를 정회전시킨다. 스크류(152)가 정회전됨에 따라 지지판(141)과 승강부재(153)는 함께 상승한다. 이때 승강가이드(154)는 지지판(141)과 승강부재(153)의 회전을 방지하며, 지지판(141)과 승강부재(153)의 상승을 안내한다. 6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment. Referring to FIG. 6, the driving motor 151 rotates the screw 152 forward to carry out the two bonded substrates S1 and S2. As the screw 152 is rotated forward, the support plate 141 and the lifting member 153 ascend together. At this time, the lifting guide 154 prevents the support plate 141 and the lifting member 153 from rotating, and guides the rising of the support plate 141 and the lifting member 153.

스크류(152)의 정회전에 의해 상승하는 승강부재(153)는 상부챔버(135)에 접촉된다. 이때 완충부재(155)는 서로 접촉되는 상부챔버(135)와 승강부재(153)에 발생될 수 있는 충격을 완화시키며, 상부챔버(135) 및 승강부재(153)의 마모를 방지한다.The elevating member 153 rising by the forward rotation of the screw 152 is in contact with the upper chamber 135. In this case, the shock absorbing member 155 relieves the shock that may occur in the upper chamber 135 and the lifting member 153 in contact with each other, and prevents the wear of the upper chamber 135 and the lifting member 153.

상부챔버(135)에 접촉된 승강부재(153)는 스크류(152)의 정회전에 따라 계속 해서 상승하며, 상부챔버(135)는 승강부재(153)에 지지되어 승강부재(153)와 함께 상승한다. 상부챔버(135)의 상승에 따라 처리공간(130a)은 개방된다.The elevating member 153 in contact with the upper chamber 135 continues to rise according to the forward rotation of the screw 152, and the upper chamber 135 is supported by the elevating member 153 to ascend with the elevating member 153. . As the upper chamber 135 rises, the processing space 130a is opened.

이후, 합착된 두 기판(S1, S2)은 개방된 처리공간(130a)의 외부로 반출된다.Thereafter, the two bonded substrates S1 and S2 are carried out of the open processing space 130a.

상술한 바와 같이 기판합착장치는 구동부(150)에 의해 처리공간(130a)의 개폐와 두 기판(S1, S2)의 간격조절을 수행할 수 있다. As described above, the substrate bonding apparatus may perform opening / closing of the processing space 130a and adjusting spacing between the two substrates S1 and S2 by the driving unit 150.

도 1은 본 실시예에 따른 기판합착장치를 나타낸 사시도이다.1 is a perspective view showing a substrate bonding apparatus according to the present embodiment.

도 2는 본 실시예에 따른 기판합착장치를 나타낸 단면도이다.2 is a cross-sectional view showing a substrate bonding apparatus according to the present embodiment.

도 3은 본 실시예에 따른 기판처리장치에서 처리공간이 개방된 상태를 나타낸 부분단면도이다. 3 is a partial cross-sectional view showing a state in which a processing space is opened in the substrate processing apparatus according to the present embodiment.

도 4는 본 실시예에 따른 기판처리장치의 처리공간 밀폐 작동을 나타낸 부분단면도이다.4 is a partial sectional view showing a process space sealing operation of the substrate processing apparatus according to the present embodiment.

도 5는 본 실시예에 따른 기판처리장치의 기판 간격조절 작동을 나타낸 부분단면도이다.5 is a partial cross-sectional view showing a substrate gap adjusting operation of the substrate processing apparatus according to the present embodiment.

도 6은 본 실시예에 따른 기판처리장치의 처리공간 개방 동작을 나타낸 부분단면도이다.6 is a partial cross-sectional view showing a processing space opening operation of the substrate processing apparatus according to the present embodiment.

<도면의 주요부분에 대한 부호 설명>Description of the Related Art [0002]

110 : 프레임 120 : 정렬스테이지110: frame 120: alignment stage

130 : 챔버 131 : 하부챔버130: chamber 131: lower chamber

135 : 상부챔버 136 : 상정반135: upper chamber 136: upper plate

140 : 상정반지지부 141 : 지지판140: upper plate support 141: support plate

142 : 지지축 150 : 구동부142: support shaft 150: drive unit

152 : 스크류 154 : 승강부재 152: screw 154: lifting member

Claims (8)

하부기판을 지지하는 하부챔버;A lower chamber supporting the lower substrate; 상기 하부챔버와 함께 처리공간을 제공하며, 상기 하부챔버로부터 분리 가능한 상부챔버;An upper chamber providing a processing space together with the lower chamber, the upper chamber being detachable from the lower chamber; 상기 상부챔버의 내측에 배치되어 상기 상부챔버로부터 이격되며, 상부기판을 지지하는 상정반;An upper plate disposed inside the upper chamber, spaced apart from the upper chamber, and supporting the upper substrate; 상기 상부챔버의 외측에 배치되어 상기 상부챔버로부터 이격되며, 상기 상부챔버를 관통하여 상기 상정반을 지지하는 상정반지지부;An upper half support part disposed outside the upper chamber and spaced apart from the upper chamber to support the upper half through the upper chamber; 상기 하부챔버와 상기 상부챔버를 관통하여 상기 상정반지지부에 나사결합되는 스크류;A screw threaded through the lower chamber and the upper chamber and screwed to the upper support part; 상기 스크류를 회전시켜 상기 상정반지지부를 승강시키는 구동모터;A driving motor for rotating the screw to elevate the upper support plate; 상기 상부챔버의 하부에 배치되어 상기 스크류에 나사결합되며, 상기 스크류의 회전에 따라 상기 상부챔버를 지지하여 상기 스크류의 회전에 따라 상기 상부챔버를 승강시키는 승강부재;를 포함하는 것을 특징으로 하는 기판합착장치.And an elevating member disposed under the upper chamber and screwed to the screw to support the upper chamber according to the rotation of the screw and to elevate the upper chamber according to the rotation of the screw. Cementing device. 제1 항에 있어서, The method according to claim 1, 상기 하부챔버에 고정되고, 상기 승강부재, 상기 상부챔버 및 상기 상정반지지부를 관통하며, 상기 상부챔버와 상기 승강부재의 승강을 안내하는 승강가이드를 더 포함하는 것을 특징으로 하는 기판합착장치.And an elevating guide fixed to the lower chamber and penetrating the elevating member, the upper chamber, and the upper half supporting portion to guide the elevating of the upper chamber and the elevating member. 제1 항에 있어서, 상기 상부챔버와 상기 승강부재의 사이에 배치되는 완충부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 1, further comprising a buffer member disposed between the upper chamber and the elevating member. 제1 항에 있어서, 상기 하부챔버와 상기 상부챔버의 사이에 배치되는 제1 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.The substrate bonding apparatus of claim 1, further comprising a first hermetic member disposed between the lower chamber and the upper chamber. 제1 항에 있어서, 상기 상정반지지부는 The method of claim 1, wherein the support half support portion 상기 상부챔버의 상측에 배치되며, 상기 스크류의 회전에 따라 승강되는 지지판;및A support plate disposed on an upper side of the upper chamber and lifted according to the rotation of the screw; and 상기 지지판으로부터 연장되며, 상기 상부챔버를 관통하여 상기 상정반에 체결되는 지지축을 포함하는 것을 특징으로 하는 기판합착장치.And a support shaft extending from the support plate and passing through the upper chamber and fastened to the upper plate. 제5 항에 있어서, 상기 지지판과 상기 상부챔버의 사이에 배치되는 제2 기밀부재를 더 포함하는 것을 특징으로 하는 기판합착장치.6. The substrate bonding apparatus according to claim 5, further comprising a second hermetic member disposed between the support plate and the upper chamber. 제1 항에 있어서, The method according to claim 1, 상기 하부챔버를 지지하는 프레임;및A frame supporting the lower chamber; and 상기 프레임에 지지되며, 상기 구동모터를 평면 상에서 이동시키는 정렬스테이지를 더 포함하는 것을 특징으로 하는 기판합착장치.And an alignment stage which is supported by the frame and moves the driving motor on a plane. 제1 항에 있어서, 상기 상정반이 승강되는 경로에 배치되며, 상기 상정반의 위치를 감지하여 상기 하부기판과 상기 상부기판의 간격을 측정할 수 있도록 하는 간격감지기를 더 포함하는 것을 특징으로 하는 기판합착장치. The substrate of claim 1, further comprising a gap detector disposed on a path in which the upper plate is lifted and detecting a position of the upper plate to measure a distance between the lower substrate and the upper substrate. Cementing device.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11728200B2 (en) 2019-05-23 2023-08-15 Samsung Electronics Co., Ltd. Wafer bonding apparatuses

Families Citing this family (258)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
KR101540054B1 (en) * 2012-12-28 2015-07-29 엘아이지인베니아 주식회사 Method and apparatus for bonding substrates
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (en) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and method of operating the same
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
KR20180068582A (en) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (en) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
KR102457289B1 (en) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) * 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (en) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102630301B1 (en) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (en) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
KR102597978B1 (en) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. Storage device for storing wafer cassettes for use with batch furnaces
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
KR102455643B1 (en) * 2018-01-26 2022-10-19 주식회사 케이씨텍 Apparatus for Treating Substrate and the Method Thereof
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
WO2019158960A1 (en) 2018-02-14 2019-08-22 Asm Ip Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (en) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. Substrate processing method
TWI811348B (en) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
TWI816783B (en) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 Methods for forming a doped metal carbide film on a substrate and related semiconductor device structures
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
JP2021529254A (en) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
CN112292477A (en) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
KR20200002519A (en) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. Method for depositing a thin film and manufacturing a semiconductor device
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
KR102605121B1 (en) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (en) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming device structure using selective deposition of gallium nitride, and system for the same
TWI819180B (en) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200091543A (en) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. Semiconductor processing device
CN111524788B (en) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 Method for topologically selective film formation of silicon oxide
KR102626263B1 (en) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. Cyclical deposition method including treatment step and apparatus for same
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
KR102638425B1 (en) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. Method and apparatus for filling a recess formed within a substrate surface
JP2020136677A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Periodic accumulation method for filing concave part formed inside front surface of base material, and device
JP2020133004A (en) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Base material processing apparatus and method for processing base material
KR20200108243A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Structure Including SiOC Layer and Method of Forming Same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130118A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Method for Reforming Amorphous Carbon Polymer Film
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP2021015791A (en) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． Plasma device and substrate processing method using coaxial waveguide
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (en) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 Method of forming topologically controlled amorphous carbon polymer films
TW202113936A (en) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
KR20210024420A (en) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
TW202129060A (en) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Substrate processing device, and substrate processing method
TW202115273A (en) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming a photoresist underlayer and structure including same
KR20210045930A (en) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. Method of Topology-Selective Film Formation of Silicon Oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
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JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
JP2021097227A (en) 2019-12-17 2021-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー Method of forming vanadium nitride layer and structure including vanadium nitride layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
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US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
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US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
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CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
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US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
CN113555279A (en) 2020-04-24 2021-10-26 Asm Ip私人控股有限公司 Method of forming vanadium nitride-containing layers and structures including the same
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
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KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040063635A (en) * 2003-01-08 2004-07-14 주식회사 에이디피엔지니어링 Substrate pressing apparatus for use in LCD cell fabricating process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040063635A (en) * 2003-01-08 2004-07-14 주식회사 에이디피엔지니어링 Substrate pressing apparatus for use in LCD cell fabricating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11728200B2 (en) 2019-05-23 2023-08-15 Samsung Electronics Co., Ltd. Wafer bonding apparatuses

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