KR101020534B1 - Portable Four-Point Probe for Sheet Resistance Measurement with the Dual Configuration Method - Google Patents

Portable Four-Point Probe for Sheet Resistance Measurement with the Dual Configuration Method Download PDF

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KR101020534B1
KR101020534B1 KR1020070084261A KR20070084261A KR101020534B1 KR 101020534 B1 KR101020534 B1 KR 101020534B1 KR 1020070084261 A KR1020070084261 A KR 1020070084261A KR 20070084261 A KR20070084261 A KR 20070084261A KR 101020534 B1 KR101020534 B1 KR 101020534B1
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South Korea
Prior art keywords
sheet resistance
sample
probes
probe
dual
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KR1020070084261A
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Korean (ko)
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KR20090019947A (en
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강전홍
유광민
김한준
박영태
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한국표준과학연구원
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/08—Measuring resistance by measuring both voltage and current
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Measurement Of Resistance Or Impedance (AREA)

Abstract

본 발명은 박막 시료의 면저항 측정시 시료의 크기와 위치에 관계없이 누구나 쉽고 정확하게 면저항을 측정을 할 수 있는 듀얼 형상(dual configuration)기술을 면저항 측정장치에 적용한 것이다. 이 듀얼 형상 방법의 원리는 시료의 표면에 4 탐침을 접촉시키고, 바깥쪽 두 핀에 전류(

Figure 112009012453648-pat00010
)를 인가한 후, 안쪽 두 핀에서 전압(
Figure 112009012453648-pat00011
)을 측정하여 오옴의 법칙에 의해 저항(
Figure 112009012453648-pat00012
)을 구하는 것과, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류(
Figure 112009012453648-pat00013
)를 인가한 후, 두 번째 핀과 네 번째 핀에서 전압(
Figure 112009012453648-pat00014
)을 측정하여 오옴에 법칙에 의해 저항(
Figure 112009012453648-pat00015
)을 구하여 면저항(
Figure 112009012453648-pat00016
[Ω/square])을 구하는 원리이다. The present invention applies a dual configuration technology to the sheet resistance measuring apparatus, which can easily and accurately measure sheet resistance regardless of the size and position of the sample when measuring the sheet resistance of the thin film sample. The principle of this dual geometry method is that the four probes are brought into contact with the surface of the sample and the current
Figure 112009012453648-pat00010
After applying), the voltage (
Figure 112009012453648-pat00011
) And by the Ohm's law
Figure 112009012453648-pat00012
) And the current at the first and third pins of the probe.
Figure 112009012453648-pat00013
After applying), the voltage at the second and fourth pins (
Figure 112009012453648-pat00014
) And measure the resistance (
Figure 112009012453648-pat00015
) To obtain the sheet resistance (
Figure 112009012453648-pat00016
[Ω / square]).

여기서

Figure 112009012453648-pat00017
이다.here
Figure 112009012453648-pat00017
to be.

본 발명은 이 듀얼 원리를 적용하여 전자회로를 설계한 후, 면저항 측정장치를 제작하여 4 탐침이 시료에 접촉되면 면저항이 자동측정 되도록 한 것을 특징으로 하는 듀얼 형상 방법을 적용한 휴대용 4 탐침 면저항 측정장치에 관한 것이다.According to the present invention, after designing an electronic circuit based on the dual principle, a sheet resistance measuring apparatus is fabricated so that the sheet resistance is automatically measured when four probes are in contact with a sample. It is about.

면저항, 4 탐침, 측정장치, 일체형, Single & Dual Configuration, Four-Point ProbeSheet Resistance, 4 Probes, Measuring Devices, Integrated, Single & Dual Configuration, Four-Point Probe

Description

듀얼 형상 방법을 적용한 휴대용 4탐침 면저항 측정장치{Portable Four-Point Probe for Sheet Resistance Measurement with the Dual Configuration Method}Portable Four-Point Probe for Sheet Resistance Measurement with the Dual Configuration Method

본 발명은 박막 시료의 면저항 측정시 시료의 크기와 위치에 관계없이 누구나 쉽고 정확하게 면저항을 측정을 할 수 있는 듀얼 형상(dual configuration)기술을 면저항 측정장치에 적용한 것이다. 이 듀얼 형상 방법의 원리는 시료의 표면에 4 탐침을 접촉시키고, 바깥쪽 두 핀에 전류(

Figure 112009012453648-pat00018
)를 인가한 후, 안쪽 두 핀에서 전압(
Figure 112009012453648-pat00019
)을 측정하여 오옴의 법칙에 의해 저항(
Figure 112009012453648-pat00020
)을 구하는 것과, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류(
Figure 112009012453648-pat00021
)를 인가한 후, 두 번째 핀과 네 번째 핀에서 전압(
Figure 112009012453648-pat00022
)을 측정하여 오옴에 법칙에 의해 저항(
Figure 112009012453648-pat00023
)을 구하여 면저항(
Figure 112009012453648-pat00024
[Ω/square])을 구하는 원리이다.
여기서
Figure 112009012453648-pat00025
이다.
본 발명은 이 듀얼 원리를 적용하여 전자회로를 설계한 후, 면저항 측정장치를 제작하여 4 탐침이 시료에 접촉되면 면저항이 자동측정 되도록 한 것을 특징으로 하는 듀얼 형상 방법을 적용한 휴대용 4 탐침 면저항 측정장치에 관한 것이다.The present invention applies a dual configuration technology to the sheet resistance measuring apparatus, which can easily and accurately measure sheet resistance regardless of the size and position of the sample when measuring the sheet resistance of the thin film sample. The principle of this dual geometry method is that the four probes are brought into contact with the surface of the sample and the current
Figure 112009012453648-pat00018
After applying), the voltage (
Figure 112009012453648-pat00019
) And by the Ohm's law
Figure 112009012453648-pat00020
) And the current at the first and third pins of the probe.
Figure 112009012453648-pat00021
After applying), the voltage at the second and fourth pins (
Figure 112009012453648-pat00022
) And measure the resistance (
Figure 112009012453648-pat00023
) To obtain the sheet resistance (
Figure 112009012453648-pat00024
[Ω / square]).
here
Figure 112009012453648-pat00025
to be.
According to the present invention, after designing an electronic circuit based on the dual principle, a sheet resistance measuring apparatus is fabricated. It is about.

종래에는 대부분 단일 형상(single configuration)기술을 적용한 면저항 측정장치로서 면저항

Figure 112009012453648-pat00026
[Ω/square]으로 계산된다. 이 원리는 균질한 시료인 경우 시료 중심에서 측정한 면저항 값과 가장자리 부근에서 측정한 면저항 값이 크게 차이가 나는 단점이 있으며, 시료의 크기와 두께에 따른 보정계수를 반드시 적용해야하는 단점이 있다. 따라서 본 발명은 이러한 종래 기술의 단점을 보완한 것으로 보정계수를 적용할 필요가 거의 없으며, 시료의 측정위치에 관계없이 정밀?정확한 면저항을 측정할 수 있는 듀얼 형상(dual configuration)기술을 적용한 휴대용 면저항 측정장치이다.Conventionally, sheet resistance measuring device adopts single configuration technology.
Figure 112009012453648-pat00026
It is calculated as [square / square]. This principle has a disadvantage in that the homogeneous sample has a significant difference between the sheet resistance measured at the center of the sample and the sheet resistance measured near the edge, and a correction factor according to the size and thickness of the sample must be applied. Therefore, the present invention compensates for the shortcomings of the prior art, and there is almost no need to apply a correction factor, and portable sheet resistance using dual configuration technology capable of measuring accurate and accurate sheet resistance regardless of the measurement position of the sample. It is a measuring device.

종래에는 인증표준물질을 사용하여 면저항을 측정하더라도, 시료의 중심에서와 가장자리(외곽측)에서의 측정값에 차이가 생기는 문제점이 있다.Conventionally, even if the sheet resistance is measured using a certified standard material, there is a problem in that the measured value at the center and the edge (outer side) of the sample occurs.

본 발명은 종래의 싱글 형상(single configuration) 기술을 적용한 면저항(Rs) 측정장치는 시료의 크기와 형상에 따라서 시료의 중심에서 측정한 값과 가장자리 부근에서 측정한 값의 차이가 크게 나타나는 단점을 보완한 dual configuration 기술을 적용한 것으로 상기의 문제점을 모두 해결할 수 있다. According to the present invention, the sheet resistance (R s ) measuring device using the conventional single configuration technique has a disadvantage in that the difference between the value measured at the center of the sample and the value measured near the edge is large depending on the size and shape of the sample. By applying the complementary dual configuration technology, all the above problems can be solved.

본 발명은 면저항 측정시 보정계수가 필요 없으며, 시료의 크기와 형상과 측정위치에 관계없이 정밀 정확한 측정을 할 수 있는 장점이 있으며, 균질한 박막 시료의 경우 시료의 중심에서 측정한 값과 측과 외곽측에서 측정한 값의 차이가 없다. 또한, 측정탐침을 일체형으로 제작하여 사용하므로 기존 측정탐침의 이중구조에서 발생하던 접촉저항이 발생하지 않는 효과도 있다. The present invention does not require a correction coefficient when measuring sheet resistance, and has the advantage of making accurate and accurate measurements regardless of the size, shape, and measurement position of the sample. There is no difference in the values measured on the outside. In addition, since the measuring probe is manufactured and used integrally, there is an effect that the contact resistance generated in the dual structure of the existing measuring probe does not occur.

본 발명은 박막 시료의 면저항 측정시 시료의 크기와 위치에 관계없이 누구나 쉽고 정확하게 면저항을 측정을 할 수 있는 듀얼 형상(dual configuration)기술을 면저항 측정장치에 적용한 것이다. 이 듀얼 형상 방법의 원리는 시료의 표면에 4개의 탐침이 직렬로 배열되는 4 탐침의 프로브를 접촉시키고, 바깥쪽 두 핀에 전류 공급장치로 전류(

Figure 712009004392186-pat00048
)를 인가하고, 안쪽 두 핀과 연결된 전압 측정장치를 통해 전압(
Figure 712009004392186-pat00049
)을 측정하여 오옴의 법칙에 의해 저항(
Figure 712009004392186-pat00050
Ω)을 구하고, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류공급장치를 연결하여 전류(
Figure 712009004392186-pat00051
)를 인가한 후, 두 번째 핀과 네 번째 핀에 전압 측정장치를 연결하여 전압(
Figure 712009004392186-pat00052
)을 측정하고 오옴에 법칙에 의해 저항(
Figure 712009004392186-pat00053
Ω)을 구한뒤, 상기 Ra 값과 Rb 값을 듀얼형상방법을 적용한 보정식 Ka
Figure 712009004392186-pat00054
식에 대입하여 면저항(
Figure 712009004392186-pat00055
(Ω/square)) 을 구하는 것으로 이루어진다.
또한, 상기 4 탐침(21) 프로브(20)는 일측이 시료(10)와 접촉되어지고, 타측에 외부의 측정장치와 연결되는 일체형으로 이루어진다.
즉, 본 발명을 좀 더 상세하게 설명하면 다음과 같다.
상기의 면저항 (
Figure 712009004392186-pat00035
[Ω/square])계산 수식에서 알 수 있듯이
Figure 712009004392186-pat00036
와
Figure 712009004392186-pat00037
를 구해야 하므로 4 탐침이 시료의 표면에 접촉하게 되면 인가전류인가장치를 통해 바깥쪽 두 핀에 전류(
Figure 712009004392186-pat00056
)를 인가하고, 전압측정장치를 통해 안쪽 두 핀에서 전압(
Figure 712009004392186-pat00057
)을 측정하여 오옴의 법칙에 의해 저항(
Figure 712009004392186-pat00058
Ω)을 구하고, 첫 번째 핀과 세 번째 핀에 전류공급장치를 통해 전류(
Figure 712009004392186-pat00059
)를 인가하고, 두 번째 핀과 네 번째 핀에 전압측정장치를 연결하고 전압(
Figure 712009004392186-pat00060
)을 측정하여 오옴에 법칙에 의해 저항(
Figure 712009004392186-pat00061
Ω)을 구하여 저항값(
Figure 712009004392186-pat00038
,
Figure 712009004392186-pat00039
)을 구하게 된다.
그런뒤, (
Figure 712009004392186-pat00062
,
Figure 712009004392186-pat00063
)값을
Figure 712009004392186-pat00064
식에 대입하여 Ka 값을 구하고, 이를 이용해 면저항(Rs)(
Figure 712009004392186-pat00065
)값을 구하게 된다.
즉, 이러한 측정회로를 설계 제작한 후 4 탐침(21)이 시료(10)에 접촉되면 상기의 과정을 통해 면저항을 측정하게 되어진다.
이러한, 4 탐침(21) 프로브(20)는 박막 시료에 따라 탐침의 반경을 50 μm에서 500 μm 범위에 있는 4 탐침의 프로브를 선택하여 사용하게 된다.The present invention applies a dual configuration technology to the sheet resistance measuring apparatus, which can easily and accurately measure sheet resistance regardless of the size and position of the sample when measuring the sheet resistance of the thin film sample. The principle of this dual-shape method is to contact the probe of four probes with four probes arranged in series on the surface of the sample, and to the outer two pins with a current supply
Figure 712009004392186-pat00048
) And through the voltage measuring device connected to the two inner pins
Figure 712009004392186-pat00049
) And by the Ohm's law
Figure 712009004392186-pat00050
Ω) and connect the current supply to the first and third pins of the 4 probe to
Figure 712009004392186-pat00051
After applying), connect the voltage measuring device to the second and fourth pins
Figure 712009004392186-pat00052
) And measure the resistance (
Figure 712009004392186-pat00053
Ω), and then the Ra and Rb values are corrected by applying the dual shape method Ka.
Figure 712009004392186-pat00054
Substituting the equation into the sheet resistance (
Figure 712009004392186-pat00055
(Ω / square)).
In addition, the four probes 21, the probe 20 is made of an integral type in which one side is in contact with the sample 10, and the other side is connected to an external measuring device.
That is, the present invention will be described in more detail as follows.
Sheet resistance above (
Figure 712009004392186-pat00035
As you can see from the calculation formula
Figure 712009004392186-pat00036
Wow
Figure 712009004392186-pat00037
Therefore, if the probe comes into contact with the surface of the sample, the current
Figure 712009004392186-pat00056
) And the voltage at the two inner pins
Figure 712009004392186-pat00057
) And by the Ohm's law
Figure 712009004392186-pat00058
Ω) and through the current supply to the first and third pins
Figure 712009004392186-pat00059
) And connect the voltage measuring device to the second and fourth pins
Figure 712009004392186-pat00060
) And measure the resistance (
Figure 712009004392186-pat00061
Find the resistance value
Figure 712009004392186-pat00038
,
Figure 712009004392186-pat00039
).
Then, (
Figure 712009004392186-pat00062
,
Figure 712009004392186-pat00063
Value
Figure 712009004392186-pat00064
Substitute in the equation to find the Ka value and use it to obtain the sheet resistance (Rs) (
Figure 712009004392186-pat00065
Will be obtained.
That is, after designing and manufacturing such a measuring circuit, when the four probes 21 come into contact with the sample 10, the sheet resistance is measured through the above process.
The 4 probe 21 probe 20 selects and uses a 4 probe probe having a radius of 50 μm to 500 μm according to a thin film sample.

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도 1은 본 발명에 따른 일체형 탐침이 개재된 프로브를 이용하여 시료를 동시에 다수의 프로브로 측정하는 것을 나타낸 사시도,1 is a perspective view showing the measurement of a sample with a plurality of probes at the same time using a probe interposed with an integrated probe according to the present invention,

도 2는 본 발명에 따른 일체형 탐침의 구성을 나타낸 정면도.Figure 2 is a front view showing the configuration of the integrated probe according to the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

10 : 시료 20 : 프로브10 sample 20 probe

21 : 탐침21: probe

Claims (4)

박막 시료의 면저항을 누구나 쉽고 정확하게 측정할 수 있는 듀얼 형상(dual configuration)기술에 있어서,In the dual configuration technology that anyone can easily and accurately measure the sheet resistance of a thin film sample, 시료의 표면에 4개의 탐침이 직렬로 배열되는 4 탐침의 프로브를 접촉시키고, 바깥쪽 두 핀에 전류 공급장치로 전류(
Figure 712009004392186-pat00066
)를 인가하고, 안쪽 두 핀과 연결된 전압 측정장치를 통해 전압(
Figure 712009004392186-pat00067
)을 측정하여 오옴의 법칙에 의해 저항(
Figure 712009004392186-pat00068
Ω)을 구하고, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류공급장치를 연결하여 전류(
Figure 712009004392186-pat00069
)를 인가한 후, 두 번째 핀과 네 번째 핀에 전압 측정장치를 연결하여 전압(
Figure 712009004392186-pat00070
)을 측정하고 오옴에 법칙에 의해 저항(
Figure 712009004392186-pat00071
Ω)을 구한뒤, 상기 Ra 값과 Rb 값을 듀얼형상방법을 적용한 보정식 KaContact the probe of the four probes with four probes arranged in series on the surface of the sample, and the current
Figure 712009004392186-pat00066
) And through the voltage measuring device connected to the two inner pins
Figure 712009004392186-pat00067
) And by the Ohm's law
Figure 712009004392186-pat00068
Ω) and connect the current supply to the first and third pins of the 4 probe to
Figure 712009004392186-pat00069
After applying), connect the voltage measuring device to the second and fourth pins
Figure 712009004392186-pat00070
) And measure the resistance (
Figure 712009004392186-pat00071
Ω), and then the Ra and Rb values are corrected by applying the dual shape method Ka.
Figure 712009004392186-pat00072
식에 대입하여 면저항(
Figure 712009004392186-pat00073
(Ω/square)) 을 구하는 것을 포함하여 이루어지는 듀얼 형상 방법을 적용한 휴대용 4 탐침 면저항 측정장치.
Figure 712009004392186-pat00072
Substituting the equation into the sheet resistance (
Figure 712009004392186-pat00073
A portable four-probe sheet resistance measuring device using a dual shape method comprising calculating (Ω / square)). 제 1항에 있어서,The method of claim 1, 상기 4 탐침(21)이 형성된 프로브(20)를 시료(10)의 면적에 따라 다수 개 설치하여 측정하고자 하는 여러 위치에서 필요한 간격만큼 이격시키고, 시료의 표면에 4 탐침(21) 프로브(20)를 접촉시켜 동시 또는 순차적으로 면저항(Ω/square)을 측정하는 것을 특징으로 하는 듀얼 형상 방법을 적용한 휴대용 4 탐침 면저항 측정장치.A plurality of probes 20 having the four probes 21 formed thereon are installed according to the area of the sample 10 and spaced apart from each other at various positions to be measured by necessary intervals, and the four probes 21 probes 20 on the surface of the sample. The portable four-probe sheet resistance measurement device using the dual shape method, characterized in that the contact resistance is measured simultaneously or sequentially in sheet resistance (Ω / square). 삭제delete 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10123190A (en) 1996-10-22 1998-05-15 Sony Corp Method for measuring sheet resistance of semiconductor substrate
KR20000020765A (en) * 1998-09-23 2000-04-15 윤종용 Apparatus for measuring wafer resistance/thickness
JP2005175237A (en) 2003-12-12 2005-06-30 Hitachi Ltd Manufacturing method of thin film semiconductor device
JP2007064799A (en) 2005-08-31 2007-03-15 Pentel Corp Film surface resistance measuring instrument

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10123190A (en) 1996-10-22 1998-05-15 Sony Corp Method for measuring sheet resistance of semiconductor substrate
KR20000020765A (en) * 1998-09-23 2000-04-15 윤종용 Apparatus for measuring wafer resistance/thickness
JP2005175237A (en) 2003-12-12 2005-06-30 Hitachi Ltd Manufacturing method of thin film semiconductor device
JP2007064799A (en) 2005-08-31 2007-03-15 Pentel Corp Film surface resistance measuring instrument

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