KR100979348B1

KR100979348B1 - Fuse of semiconductor device and method for manufacturing the same

Info

Publication number: KR100979348B1
Application number: KR1020080023553A
Authority: KR
Inventors: 김석민
Original assignee: 주식회사 하이닉스반도체
Priority date: 2008-03-13
Filing date: 2008-03-13
Publication date: 2010-08-31
Also published as: KR20090098287A

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fuse of a semiconductor device and a method of manufacturing the same. By forming a fuse using a phase change material, an amorphous and crystalline phase can be arbitrarily changed according to the magnitude of electrical energy, thereby reducing yields due to repair errors. The technique can be prevented at the source, and the repair etching process of opening the interlayer insulating film on the upper part of the fuse can be omitted.

Description

Fuse of semiconductor device and manufacturing method therefor {FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME}

The present invention relates to a fuse of a semiconductor device and a method of manufacturing the same. In particular, it relates to a fuse formed of a phase change material and a method of manufacturing the same.

In general, as semiconductor devices become more integrated, DRAM devices have increased memory capacities and chip sizes. In the manufacturing of such semiconductor devices, when a defect occurs in one cell among a large number of fine cells, The device yield is low because the whole device is disposed of as defective.

Therefore, the current yield of the chip is improved by replacing an extra redundancy cell previously formed in the memory with a cell in which a defect has occurred during the manufacturing process to restore the entire memory.

In the repair operation using the redundancy cell, when a defective memory cell is selected through a test after wafer processing is completed, a program for converting the corresponding address into an address signal of the spare cell is executed in the internal circuit.

Therefore, when an address signal corresponding to a defective line is input in actual use, the selection is changed to a spare line instead of a defective cell.

In order to perform the repair operation as described above, after completing the semiconductor device, the fuse box is opened by removing an oxide layer on the top of the fuse line in order to repair the circuit in which the failure occurs, and the corresponding fuse line is lasered. It must be cut through.

In this case, the wiring broken by the laser irradiation is called a fuse line, and the broken portion and the area surrounding the wiring are called a fuse box.

1 is a cross-sectional view showing a fuse of a semiconductor device according to the prior art.

Referring to FIG. 1, a first metal wire 110 is formed on an upper portion of a semiconductor substrate 100 having a lower structure. Here, the fuse 120 is formed in the fuse area when the first metal wire 110 is formed.

In this case, the fuse 120 is preferably formed of a metal material such as copper or aluminum or a polysilicon layer.

The interlayer insulating layer 130 is formed on the first metal wire 110.

In this case, a metal contact 140 connected to the first metal wire 110 is provided in the first interlayer insulating layer 130.

Next, a second metal wiring 150 connected to the metal contact 110 is formed, and a second interlayer insulating film 160 and a protective film (not shown) are formed on the second metal wiring 150.

Then, the repair etching is performed to form the fuse box 170 by etching the passivation layer (not shown), the second interlayer insulating layer 160, and the first interlayer insulating layer 130 on the fuse 120. In this case, the first interlayer insulating layer 130 should remain on the fuse 120.

Next, the laser is cut using the fuse 120 in a repair process using a laser. At this time, the repair process is to cut the fuse 120 by scanning the laser to the fuse 120 to the size of the set laser beam.

In the above-described method of manufacturing a semiconductor device according to the related art, the repair process requires a process of etching the protective film and the interlayer insulating film on the upper part of the fuse, and the success rate of cutting the fuse varies according to the thickness of the interlayer insulating film remaining on the upper part of the fuse. The process is difficult.

In addition, the process of cutting the fuse is performed by using the thermal energy of the laser, and as the device is integrated, the gap between the fuses decreases, so that the fuse around the fuse is not cut undesirably or the fuse is completely removed. There is a problem that is not cut.

In order to overcome this problem, an E-fuse has been proposed to perform a repair process using electrical energy instead of the thermal energy of a laser. The E-fuse applies electric energy to both ends of the fuse to cause EM (Elecro Migration) phenomenon to the fuse material, and the resistance of the fuse may be changed due to this phenomenon to obtain the effect of cutting the fuse. If the cut fuse cannot be regenerated, there is a problem of causing a decrease in yield due to an error generated during the repair process.

According to the present invention, by forming a fuse formed of a phase change material, the amorphous and crystalline phases can be arbitrarily changed according to the magnitude of electrical energy, thereby preventing a decrease in yield due to a repair error, and at the top of the fuse during the laser repair process. It is an object of the present invention to provide a fuse of a semiconductor device and a method of manufacturing the same, since the repair etching process of opening the interlayer insulating film of the semiconductor device can be omitted.

The fuse of the semiconductor device according to the invention

A first metal wiring provided on the semiconductor substrate,

An interlayer insulating layer provided on the first metal wiring;

A second metal wire provided on the interlayer insulating film;

And a fuse having a vertical structure connecting the first metal wire to the second metal wire and penetrating the interlayer insulating layer, wherein the fuse is formed of a phase change material.

The phase change material is a GST film,

The GST film is formed of any one selected from a GeSb2Te4 film and a Ge2Sb2Te5 film;

The phase of the phase change material is changed by applying electrical energy to the first and second metal wires.

In addition, the fuse manufacturing method of the semiconductor device according to the present invention

Forming a first metal wire on the semiconductor substrate having the lower structure;

Forming an interlayer insulating film on the first metal wiring;

Etching the interlayer insulating film to form a contact hole exposing the first metal wire;

Filling a phase change material in the contact hole to form a vertical fuse;

And forming a second metal wire on the interlayer insulating layer to connect with the fuse.

The phase change material is a GST film,

The phase of the phase change material is changed by applying electrical energy to the metal wiring.

In addition, the fuse of the semiconductor device according to another embodiment of the present invention

A horizontal fuse provided on the semiconductor substrate;

Metal wires provided at both ends of the fuse;

And an interlayer insulating layer provided on the fuse, wherein the fuse having a horizontal structure is formed of a phase change material.

The phase change material is a GST film,

Since the fuse of the semiconductor device and the method of manufacturing the same according to the present invention form a fuse formed of a phase change material, the amorphous and crystalline phases can be arbitrarily changed according to the magnitude of electrical energy, thereby reducing the yield caused by a repair error. And a repair etching process of opening the interlayer insulating film on the upper portion of the fuse during the laser repair process can be omitted.

It will be apparent to those skilled in the art that various modifications, additions, and substitutions are possible, and that various modifications, additions and substitutions are possible, within the spirit and scope of the appended claims. As shown in Fig.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention will be described in detail.

2 is a cross-sectional view illustrating a fuse of a semiconductor device according to the present invention.

Referring to FIG. 2, a first metal wire 210 is formed on a semiconductor substrate 200 having a lower structure, and an interlayer insulating layer 220 is provided on an entire top including the first metal wire 210. .

In addition, a contact is provided through the interlayer insulating layer 220 to be connected to the first metal wire 210. The contact is used as a fuse 230 having a vertical structure. Here, the fuse 230 is preferably formed of a phase change material.

At this time, the phase change material is formed of a GST material, the GST material is preferably any one selected from GeSb2Te4 film and Ge2Sb2Te5 film.

Next, a second metal wire 230 connected to the fuse 230 is provided on the interlayer insulating layer 220. In addition, the passivation layer 240 is disposed on the entire upper portion of the second metal wire 230.

Here, when the phase of the phase change material is changed by applying electrical energy to the first and second metal wires 210 and 230, the magnitude of the resistance varies according to the changed phase, and whether or not current flows according to the magnitude of the resistance It can be determined and the same effect as that of the conventional fuse. In addition, as the fuse is formed in a vertical structure, an area of the fuse area may be reduced.

3A to 3D illustrate a method of forming a fuse of a semiconductor device according to the present invention.

Referring to FIG. 3A, a first metal wire 310 is formed on the semiconductor substrate 300 in the cell region I and the fuse region II. Next, the first interlayer insulating film 320 is formed over the entirety of the first metal wiring 310.

Referring to FIG. 3B, the first interlayer insulating layer 320 is etched to form contact holes (not shown) that expose the first metal wires 310 of the cell region I and the fuse region II, respectively. Next, the contact hole (not shown) of the cell region I is filled with a conductive material to form a metal contact 330, and the contact hole (not shown) of the fuse region II is filled with a phase change material. As a result, a fuse 335 having a vertical structure is formed.

Here, the phase change material refers to a material capable of phasing crystalline and amorphous phases according to electrical and thermal energy conditions.

As the phase change material (GST), a chalcogenide film is used, and the chalcogenide film is a compound film made of germanium (Ge), stevilium (Sb), and tellurium (Te), for example, GeSb2Te4. Film and Ge2Sb2Te5 film.

Referring to FIG. 3C, second metal wires connected to the metal contact 330 of the cell region I and the fuse 335 of the vertical structure of the fuse region II are disposed on the first interlayer insulating layer 320. 340 is formed.

Here, the first metal wire 310 and the second metal wire 340 include existing wires such as gates, bit lines, and metal lines.

Referring to FIG. 3D, the passivation layer 350 is formed on the entire top including the second metal wires 340.

In this case, the fuse formed by using the phase change material variably changes the phase of the phase change material by using electrical energy applied to the metal wiring, and the size of the resistance is changed according to the changed phase. As a result, current flow is determined by the degree of resistance of the fuse. Therefore, the repair etching process of opening the fuse region by etching the interlayer insulating layer and the protective layer on the fuse may not be performed.

For example, when a fuse having a vertical structure is formed by using a phase change material in a crystalline state, there is a method of changing an arbitrary fuse to an amorphous state so that a current does not flow during a subsequent repair process, which is a conventional laser repair method. Is the same as

In addition, when a fuse having a vertical structure is formed by using an amorphous phase change material, there is a method of flowing a current by changing to crystalline during a subsequent repair process, which is the same as the existing anti-fuse method. .

4 is a cross-sectional view illustrating a fuse of a semiconductor device in accordance with another embodiment of the present invention.

Referring to FIG. 4, a horizontal fuse 410 is provided on a semiconductor substrate 400 having a lower structure. Here, the fuse 410 is preferably formed using a phase change material.

Metal wires 420 are connected to both ends of the fuse 410, and an interlayer insulating layer 430 and a protective layer 440 are provided on the fuse 410. The semiconductor device illustrated in FIG. 4 may have the same effect as the cutting of a fuse by changing a phase of a phase change material by using electrical energy, without performing a repair etching process of etching an interlayer insulating layer formed on the fuse. Therefore, the yield of the repair process is improved.

In this way, by forming a fuse with a phase change material, the amorphous and crystalline phases can be arbitrarily changed according to the magnitude of the electrical energy, thereby preventing the yield decrease due to a repair error.

2 is a cross-sectional view showing a fuse of a semiconductor device according to the present invention.

3A to 3D are cross-sectional views illustrating a method of manufacturing a fuse of a semiconductor device according to the present invention.

300: semiconductor substrate 310: first metal wiring

320: first interlayer insulating film 330: metal contact

335: fuse 340: second metal wiring

350: second interlayer insulating film

Claims

A first metal wire provided on the semiconductor substrate;

An interlayer insulating layer provided on the first metal wire;

A second metal wire provided on the interlayer insulating film; And

The method of claim 1,

The phase change material is a fuse of the semiconductor device, characterized in that the GST film.

The method of claim 2,

And the GST film is formed of any one selected from a GeSb2Te4 film and a Ge2Sb2Te5 film.

The method of claim 1,

The fuse of the semiconductor device, characterized in that for changing the phase of the phase change material by applying electrical energy to the first and second metal wiring.

Forming a first metal wire on the semiconductor substrate having a lower structure;

Forming an interlayer insulating layer on the first metal wire;

Filling a phase change material in the contact hole to form a vertical fuse; And

And forming a second metal wire connected to the fuse on the interlayer insulating layer.

The method of claim 5,

The phase change material is a manufacturing method of a semiconductor device, characterized in that the GST film.

The method of claim 6,

The GST film is formed of any one selected from GeSb2Te4 film and Ge2Sb2Te5 film.

The method of claim 5,

The method of manufacturing a semiconductor device, characterized in that to change the phase of the phase change material by applying electrical energy to the metal wiring.

A fuse having a horizontal structure provided on the semiconductor substrate;

Metal wires provided at both ends of the fuse; And

And an interlayer insulating layer provided on the fuse, wherein the fuse of the horizontal structure is formed of a phase change material.

The method of claim 9,

The method of claim 10,

The method of claim 9,

The fuse of the semiconductor device, characterized in that for changing the phase of the phase change material by applying electrical energy to the metal wiring.