KR100944186B1 - Gas injection units of chemical vapor deposition chamber - Google Patents

Abstract

PURPOSE: Gas injection units of a chemical vapor deposition chamber are provided to improve the uniformity of a thin film by supplying a reaction gas at same speed and position through a mixed nozzle. CONSTITUTION: A first reaction gas supply pipe(38) and a second reaction gas supply pipe(40) are included in an injection system cover. A first reaction gas chamber and a second reaction chamber do not mix the gas from a supply pipe and supplies it to a reaction gas mixing injection pipe. The gas chamber is connected to the reaction gas mixing injection pipe(51) supplying the mixing gas. A cooling water supply unit(33) controlling the temperature of a jet gas and a gas injection device is included at a lower part of the gas chamber. A plurality of injection hole are formed on the first reaction gas distribution pipe and are inclined to the left and right.

Description

Gas injection device for chemical vapor deposition reactor {GAS INJECTION UNITS OF CHEMICAL VAPOR DEPOSITION CHAMBER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas injection device of a chemical vapor deposition reactor for depositing a thin film by uniformly supplying gas to the entire area of the substrate surface. The present invention relates to a gas ejection apparatus of a chemical vapor deposition reactor, which enables to achieve a higher level of thin film growth, enables uniform gas supply even in a large area, and facilitates the manufacture of a gas ejection apparatus.

In general, semiconductors fabricate devices while thin film growth, etching, and metal electrode deposition are performed on a substrate, which is a raw material.

In the semiconductor manufacturing process, the thin film process most commonly uses a chemical vapor deposition (CVD) method to grow a desired single crystal layer on a substrate. The most common deposition method is Metal Organic Chemical Vapor Deposition (MOCVD), which is a method of forming a thin film on a heated substrate by pyrolysis and re-reaction of gas injected into the reactor. The first reactant gas and the second reactant gas are supplied into the process reactor to grow a thin film on the substrate through pyrolysis and chemical reaction due to the heated susceptor.

The gas injection device used in the chemical vapor deposition reactor as described above uses a spray nozzle through a separate reaction gas flow path at the center, and a method of spraying in a direction parallel to the upper surface of the substrate is used in some injector manufacturing methods. In this method, there is a difference in pyrolysis and re-reaction environment of reactant gases reacting on the substrate close to the injection nozzle and the substrate far away, so that uniform thin film growth is impossible and the susceptor is idled to improve the uniformity. Although a complex susceptor capable of rotating is used, there is a limit in improving the uniformity of the thickness and composition of the thin film as the reactor is enlarged.

The method of injecting the reactive gas as described above must suspend and rotate the susceptor, and according to the complex susceptor structure, the susceptor must be heated to a higher temperature in order to maintain the substrate temperature required for the process. There is an increase in cost, and complex susceptor geometries make it difficult to provide the same growth conditions for multiple substrates.

In addition, when the reactor is manufactured in a large-area reactor, the distance between the injection nozzle and the susceptor section in which the substrate is accommodated becomes long, so that the growth conditions are changed and uniform thin film growth is impossible. (Related Patent No. 0722592 (2007.05.2007) 21. Registration), Chemical Vapor Deposition Reactor, Aixtron AG / Patent Publication No. 2003-0091937 (published Dec. 2003), Deposition method of crystal layer and apparatus for performing such method, Aixtron AG

As another method of the gas injection device used in the reactor as described above, as shown in Figs. 1 and 2 through a plurality of lower opening first reaction gas injection pipe 53, second reaction gas injection pipe 54 An injection apparatus (Shower Head) for uniformly injecting the reaction gas to the entire area in the vertical direction to the upper surface of the substrate 10 is used. In this method, a separate reaction gas is injected using each injection tube, and each reaction gas is mixed and reacted on the upper surface of the substrate on which the reaction gas is placed in the reactor. Therefore, in order to form a uniform film quality, the first reaction gas and the second reaction gas should be injected at very narrow intervals, and two or more kinds of reaction gas mixture compositions may be formed according to the spacing of the lower injection tube and the substrate. It is difficult to maintain optimal growth conditions because it is not uniform according to the relative distance between them, and it is also difficult to manufacture because the number of injection pipes increases exponentially in order to increase the size. (Patent EP0687749, Apparatus for chemical vapor deposition, December 12, 1995). 20)

When the thin film is grown using the shower head gas spraying device as described above, each of the reaction gases is transferred to the reactor internal space 14 by using a separate first reaction gas injection pipe 53 and a second reaction gas injection pipe 54. In this case, as the reactor size increases, the distance from the reaction gas supply pipe to the front gas injection pipe becomes difficult, and uniform gas injection becomes difficult.

In addition, when the first reaction gas injection pipe 53 and the second reaction gas injection pipe 54 are manufactured to have different lengths according to the reaction gas in each of the enlarged reactors, each of the reaction gases supplied into the reactor Since the velocity is different, laminar flow is difficult on the substrate, and this phenomenon is further intensified by increasing the respective reaction gas mixing ratio (amount of first reaction gas / second reaction gas).

The present invention has been made to solve the above-mentioned conventional problems, it is possible to achieve a higher level of thin film growth by improving the uniformity of the supply of the reaction gas throughout the entire area of the reactor according to the size of the process reactor, and the reactor The simpler structure is to reduce productivity and manufacturing cost, and to facilitate maintenance.

In the present invention for achieving the above object is a susceptor that can accommodate a substrate as a feature in the inner space of the reactor is located, the gas injection device of a chemical vapor deposition machine for supplying the reaction gas supplied from the outside into the reactor space ; At least one or more first reaction gas supply pipes and at least one or more second reaction gas supply pipes are formed, and each of the first reaction gas and the second reaction gas is formed with a separate residence space, respectively. The reaction gas mixture injection tube is formed to have a uniform reaction gas velocity by mixing and injecting the first reaction gas and the second reaction gas in the injection tube when supplying to the internal space of the reactor from the independent residence space, the reaction gas mixture The reaction gas supplied through the injection tube into the inner space of the reactor provides a gas injection device of a chemical vapor deposition machine that reacts on the heated susceptor and allows the reaction gas to be discharged to the outside.

According to the gas injection device of the chemical vapor deposition reactor according to the present invention, even if the area of the reactor for manufacturing a thin film is enlarged, a separate distribution pipe can be provided between the gas supply unit and an independent residence space to supply the gas of the same composition to all areas. By mixing each reaction gas just before the injection in the mixing injection pipe and mixing at the same speed and position, the thickness uniformity of the thin film can be improved, the reactor can be enlarged, the manufacturing process is simplified, and the process gas By reducing the process by-products of these have the effect of improving the reproducibility and productivity of thin film production.

Hereinafter, with reference to the accompanying drawings, preferred embodiments that do not limit the present invention will be described in detail.

3 illustrates a gas injection device of a chemical vapor deposition reactor according to a preferred embodiment of the present invention, and the gas injection device located above the reactor 13 includes a first reaction gas supply pipe 38 and a second reaction gas supply pipe ( 40 is provided with an injector cover 100; The first reaction gas residence space 35 and the second reaction gas residence space 37, which may supply the gases supplied from the supply pipes 38 and 40, are not mixed with each other and are supplied to the reaction gas mixing injection tube 51. Reaction gas mixture for supplying a mixed gas into the inner space 14 of the reactor 13 after the first reaction gas and the second reaction gas is introduced into each of the residence spaces 35 and 37 and mixed inside the tube. An injection device 51 connected to the injection pipe 51 and having a cooling water supply 33 for controlling a temperature of the gas injection device and the injection gas in the lower portions of the staying spaces 35 and 37; consist of.

First, the injector cover 100 includes a first reaction gas supply pipe 38 and a second reaction gas supply pipe 40 so as to independently supply the first and second reaction gases to the cover housing 21 having the lower side opened. Is installed, the first reaction gas is supplied to the first reaction gas distribution pipe 39 through the first reaction gas supply pipe 38, and the reaction gas supplied from the distribution pipe 39 is retained in the first reaction gas. It is comprised so that it may be supplied to the reaction gas mixing injection pipe 51 through the space 35.

In addition, the second reaction gas is supplied to the second reaction gas residence space 37 located below the first reaction gas residence space 35 through the second reaction gas supply pipe 40, and the second reaction gas residence space. The reaction gas supplied to the 37 is configured to be supplied to the reaction gas mixing injection pipe 51.

The first reaction gas staying space 35 and the second reaction gas staying space 37 are separated from each other by a separator 36, and the second reaction gas staying space 37 and the cooling water supply part 33 are further separated from each other. The separator 34 is insulated, and the cooling water supply 33 and the inner space 14 of the reactor 13 are separated by another separator 32.

The cooling water supply unit 33 exhibits a cooling function by continuously flowing the cooling water supplied from the outside and flowing out in the opposite direction so as to control the temperature of the reaction gas and the gas injection device.

On the other hand, the first reaction gas and the second reaction gas is the reaction gas mixture injection tube 51 so that each reaction gas is mixed in the reaction gas mixture injection tube 51 is supplied to the internal space 14 of the reactor 13 The first reaction gas inlet (51a) is formed at the upper end of the), the second reaction gas inlet (51b) is formed in the middle portion of the reaction gas mixture injection tube 51, the reaction gas mixture injection tube At the lower end of the 51, an outlet 51c through which the mixed reaction gas is discharged is formed.

The mixed reaction gas supplied from the reaction gas mixing injection tube 51 to the internal space 14 of the reactor 13 is supplied on the susceptor 11 placed on the susceptor support 12, and the reaction gas that has completed the reaction is It is configured to be exhausted to the side.

4 is a transparent view of the lid housing, and shows the first reaction gas supply pipe 38, the first reaction gas distribution pipe 39, the second reaction gas supply pipe 40, and the second reaction gas distribution pipe 41. The structure and layout are easy to understand.

The first reaction gas supply pipe 38 and the first reaction gas distribution pipe 39 are joined to the injector cover housing 21, and the first reaction gas distribution pipe 39 uniformly distributes the reaction gas in a large area. It is composed of a circular ring-shaped tube to be supplied, and as shown in the drawing, the first reaction gas distribution pipe 39 may be arranged in a plurality of concentric circles to increase the dispersion uniformity of the reaction gas.

In addition, the second reaction gas distribution pipe 41 connected to the second reaction gas supply pipe 40 is divided into a plurality of pipes and three pipes in the drawing so that the reaction gas can be uniformly supplied to the large area. As described above, when the feed gas supplied through the second reaction gas distribution pipe 41 consisting of three pipes is supplied to the second reaction gas residence space 37, the reaction gas supplied from the distribution pipe 41 has a large area. The radial separator 52 is separated into a plurality of regions, three regions in the drawing, so as to be uniformly supplied at the same reaction gas velocity.

FIG. 6 shows a process in which the first reaction gas and the second reaction gas are supplied to the residence space through respective distribution pipes and supplied to the reaction gas mixture injection pipe 51. In the first reaction gas distribution pipe 39, FIG. In order to improve the uniformity of reaction gas supply to a large area when supplying the first reaction gas residence space 35, a plurality of injection holes are formed to be inclined in the left / right direction in the first reaction gas distribution pipe 39. The injection hole is configured to face the injector cover housing 21, the reaction gas is injected through a plurality of injection holes are injected to the injector cover housing 21 surface the reaction gas is the first reaction of a large area The reaction gas can be uniformly supplied to the gas holding space 35.

Meanwhile, the second reaction gas is supplied to the second reaction gas residence space 37 through the distribution pipe 41, and the reaction gas supplied to the second reaction gas residence space 37 is the reaction gas mixture injection tube 51. The first reaction gas and the mixing injection tube 51 supplied to the second reaction gas inlet 51b formed therein and introduced from the first reaction gas inlet 51a formed at the upper end of the reaction gas mixing injection tube 51. After being mixed inside, it is supplied to the internal space 14 of the reactor 13 through the outlet 51c at the bottom.

As described above, in the present invention, when the reaction gas is supplied to the internal space 14 of the reactor 13, the mixed injection tube (1) and the second reaction gas are supplied to the internal space 14 of the reactor 13. It is configured to be mixed and supplied with each other inside the 51). Therefore, since the reaction gases are mixed with each other in the reaction gas mixing injection pipe 51 and supplied, the reaction gases may be supplied at a uniform speed.

FIG. 7 shows that the mixed reaction gas is supplied to the internal space 14 of the reactor 13 in which the substrate 10 placed on the susceptor 11 is placed through the reaction gas mixing injection tube 51. The first reaction gas is supplied through the residence space 37 formed by the injector cover housing 21 and the separator 36, and the second reaction gas is separated by the separator 36 and the separator below. The cooling water is supplied through the residence space 35 formed by 34, and the cooling water is supplied into the cooling water supply part 33 formed between the separators 34 and 32 through a separate injection pipe 31.

 1 is a plan view of a gas injection device of a chemical vapor deposition machine of the prior art,

Figure 2 is a detailed view of the gas injection device injection pipe of the conventional chemical vapor deposition machine,

3 is a plan view of a gas injection device of a chemical vapor deposition machine according to the present invention;

Figure 4 is a perspective view showing the cover housing of the gas injection device of the chemical vapor deposition apparatus according to the present invention transparently,

5 is a perspective view showing the injector cover housing 21 and the separator transparently to indicate the second reaction gas residence space of the gas injection device of the chemical vapor deposition machine according to the present invention;

6 is a cross-sectional view of a first reaction gas injection tube for uniformly supplying the first reaction gas of the gas injection device of the chemical vapor deposition machine according to the present invention;

7 is a cross-sectional view of a gas injection tube in which respective gases are mixed and injected immediately before the injection of the gas injection device of the chemical vapor deposition machine according to the present invention.

* Explanation of symbols on the main parts of the drawings

100: injector cover 200: injector body

10 substrate 11 susceptor

12: susceptor support 13: reactor

14: internal space 21: injector cover housing

22: coupling bolt 23: O-ring

31: cooling water supply pipe 32: separator

33: cooling water supply portion 34: separator

35: first reaction gas residence space 36: separator

37: second reaction gas residence space 38: the first reaction gas supply pipe

39: first reaction gas distribution pipe 40: second reaction gas supply pipe

41: second reaction gas distribution pipe 51: reaction gas mixture injection pipe

52: separator

Claims (5)

delete  In the gas ejection apparatus of the chemical vapor deposition apparatus having a susceptor for receiving a substrate as a feature in the inner space of the reactor, and supplying a reaction gas from the outside to deposit the reactant on the substrate, The gas injection unit includes an injector cover 100 including a first reaction gas supply pipe 38 and a second reaction gas supply pipe 40; The first reaction gas residence space 35 and the second reaction gas residence space 37 may be supplied to the reaction gas mixing injection tube 51 without the gases supplied from the supply pipes 38 and 40 mixed with each other. Reaction gas mixture injection pipe 51 is connected to each of the residence spaces 35 and 37 by introducing a first reaction gas and a second reaction gas into the mixing space inside the pipe and supplying the mixed gas to the internal space of the reactor. And the injector body 200 having a coolant supply unit 33 capable of controlling the temperature of the gas injector and the injection gas at the lower portions of the staying spaces 35 and 37. The supply pipe 38 is connected to the first reaction gas distribution pipe 39 in the form of a circular ring installed inside the first reaction gas staying space 35, and the left and right to the first reaction gas distribution pipe 39. A plurality of injection holes 39a are formed to be inclined in the direction, and the plurality of injection holes 39a are formed. Gas injector of the chemical vapor deposition reactor, characterized in that the cover toward the injector housing 21 direction. The method according to claim 2, The first reaction gas distribution pipe (39) is a gas injection device of a chemical vapor deposition reactor, characterized in that the plurality is arranged in a concentric state. The method according to claim 2, The second reaction gas supply pipe 40 is connected to a plurality of second reaction gas distribution pipes 41 installed in the second reaction gas residence space 37, and inside the residence space 37 has a radial separator ( 52) gas injection device of the chemical vapor deposition reactor, characterized in that the installation. The method according to claim 2, A first reaction gas inlet 51a communicating with the first reaction gas staying space 35 is formed at an upper end of the reaction gas mixture injection tube 51, and a middle portion of the reaction gas mixture injection tube 51 is formed. A second reaction gas inlet 51b communicating with the reaction gas staying space 37 is formed, and the mixed reaction gas is formed at the lower end of the reaction gas mixing injection tube 51 to the internal space 14 of the reactor 13. Gas injection device of the chemical vapor deposition reactor, characterized in that the outlet 51c is discharged to the formed.

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