KR100894173B1 - Mulitlayer adhesive film for semiconductor package - Google Patents

Abstract

An adhesive film for semiconductor package is provided to prevent metal wire from being damaged and improve an insulation property by inhibiting a physical contact of the metal wire and the rear side of a chip before and after ultraviolet irradiation. An adhesive film for semiconductor package comprises: a UV-curable wafer dicing adhesive layer containing the 65-80 parts of acrylic copolymer, the 1-5 parts of thermal hardener and the 19-30 parts of photo-curable oligomer on a basis of 100 parts of adhesion layer; a first adhesive layer(8) using the UV-curable wafer dicing adhesive layer as a support material having the 20-50 parts of thermoplastic resin on a basis of 100 parts of thermosetting resin by weight; and a second adhesive layer including mixture compositions.

Description

Adhesive film for semiconductor package {Mulitlayer Adhesive Film for Semiconductor Package}

In the semiconductor package manufacturing process, the die adhesive film layer is previously attached to a silicon wafer, and then the wafer and the adhesive film are simultaneously diced, and then the individual chips are picked up and attached onto the lead frame or the bottom chip. It relates to an adhesive film for a semiconductor package that can be embedded into the adhesive layer without damaging the metal wire.

In a conventional semiconductor package manufacturing process, in attaching a semiconductor chip to a lead frame or a circuit board member, first, a liquid adhesive is injected and applied to a die fixing pad, a semiconductor chip is mounted thereon, and then a liquid adhesive layer is applied for a predetermined time. After high temperature hardening, the multi-step process method of performing a wire bonding or a molding process has been employ | adopted.

However, with the recent trend of miniaturization, high functionality, and large capacity of electronic devices, and the necessity for high density and high integration of semiconductor packages, the size of semiconductor chips is increasing, and chips are stacked in multiple stages to improve the degree of integration. Stack packaging methods are increasing.

In the manufacture of such a multi-stage chip stack package, if the chip sizes to be stacked are different from each other, even if individual chips are stacked in pyramid shape in order of size using a conventional liquid adhesive or film adhesive, they are arranged outside the chip. It is possible to secure space for metal wire bonding on all bumps. However, when the stacked chips have the same size, it is difficult to secure space for wire bonding between stacked chips. Therefore, a separate adhesive film called a spacer is required. It has been proposed and applied. (See US Patent Publication No. 5,323,060 Japanese Patent Publication No. 2003-100953.)

1A to 1B illustrate a cross-sectional view of a semiconductor package according to the prior art. Referring to FIG. 1A, in particular, in order to perform wire 5 bonding when stacking a conventional semiconductor chip having a thickness of 100 μm or more, It can be seen that the laminated film 2 is formed between the chips leaving a space of the upper and lower semiconductor chips.

However, in the recent trend of the development of semiconductor packages, as the above-mentioned miniaturization and high performance of the semiconductor chips are rapidly progressing and the multifunctionalization is progressing, the 3D package in which two or more semiconductor chips are stacked is rapidly increasing. In order to stack more chips in a package, the thickness of both the semiconductor wafer and the interlayer adhesive film is further reduced to 100 μm or less.

As such, when the conventional stacking method is applied in manufacturing a package having a semiconductor chip and an interlayer adhesive film having a thickness of 100 μm or less, it is very vulnerable to impact due to the characteristics of the wafer chip. If there is no support layer, the chip crack 6 is more likely to occur, and on the other hand, if the thickness of the interlayer adhesive film becomes thinner, there is a greater risk of an electrical short due to the physical contact 7 between the upper chip and the metal wire. Appears (see Fig. 1b).

Therefore, there is a need for an adhesive film capable of improving chip crack prevention and insulation properties with wires in multi-stage stacking of ultrathin wafers.

In order to solve the inconvenience of the prior art, the glass transition temperature changes before and after UV irradiation with the first adhesive layer formed of a composition capable of keeping the viscosity low at a level capable of embedding into the adhesive layer without damaging the wire in the chip attaching process at 150 ° C. An object of the present invention is to provide an adhesive film for a semiconductor package formed by laminating a second adhesive layer capable of preventing physical contact between a chip back surface and a metal wire and attaching the adhesive film for ultraviolet curing dicing.

In order to achieve the above object, the adhesive film for a semiconductor package of the present invention is formed on the base film by mixing an adhesive layer for wafer dicing made of an ultraviolet curable resin composition with a thermosetting resin and an ultraviolet curable resin or a thermoplastic resin to form two adhesive layers. It is preferable that it is an adhesive film of one multilayer structure.

The present invention relates to an adhesive film for a semiconductor package, is adhered to the upper portion of the base film, 65 to 80 parts by weight of the high molecular weight acrylic copolymer, 1 to 5 parts by weight of the thermosetting agent and photocurable oligomer based on 100 parts by weight of the adhesive layer Including a pressure-sensitive adhesive layer for ultraviolet-curable wafer dicing consisting of 30 to 30 parts by weight, using the pressure-sensitive adhesive layer for ultraviolet-curable wafer dicing as a support material, a mixed composition composed of 20 to 50 parts by weight of a thermoplastic resin based on 100 parts by weight of the thermosetting resin It comprises a first bonding layer for die bonding, and formed by bonding to the first bonding layer for die bonding, consisting of a mixed composition consisting of 10 to 40 parts by weight of the thermosetting resin based on 100 parts by weight of the ultraviolet curing resin component metal after UV curing Die bonding provides electrical insulation between the wire and the back of the semiconductor chip It is preferable to include the solvent 2nd adhesive layer.

In the present invention, it is preferable that the first bonding layer for die bonding and the second bonding layer for die bonding have a melt viscosity of 100 to 1,000 Pa · S at 150 ° C.

In the present invention, the glass transition temperature of the second bonding layer for die bonding is preferably increased on the basis of UV curing before and after, and the rising temperature is not particularly limited, but may be increased to 70 ° C. to 100 ° C., preferably May rise to 80 ° C to 90 ° C.

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In the present invention, the thermoplastic resin of the first bonding layer for die bonding is preferably made of one selected from an acrylic acid copolymer, a polyester resin, a polyimide resin, and a mixture of the above materials.

In the present invention, the ultraviolet curable resin component of the second adhesive layer for die bonding comprises 50 to 80 parts by weight of polyester-modified acrylate oligomer and 20 to 50 parts by weight of bifunctional acrylate monomer based on 100 parts by weight of the ultraviolet curable resin component. Can be.

In the present invention, the thermosetting resin of the second adhesive layer for die bonding is preferably composed of 30 to 50 parts by weight of an acrylic copolymer, 20 to 40 parts by weight of a polyfunctional epoxy resin, and 10 to 30 parts by weight of a curing agent.

According to the present invention, a first adhesive layer of a thermosetting resin and a second adhesive layer formed by mixing a thermoplastic resin or an ultraviolet curable resin with a thermosetting resin are laminated and adhered to an adhesive film to form an adhesive film, thereby damaging the metal wire during the manufacturing process. And prevent physical contact between the back surface of the chip before and after ultraviolet irradiation and the metal wire, thereby improving insulation properties.

In addition, the semiconductor package formed using the adhesive film of the multilayer structure of the present invention has the effect of improving the wafer adhesion, adhesion strength, heat resistance and embedding of the metal wire.

According to a preferred embodiment of the present invention for achieving the above object, the adhesive film for a semiconductor package of the present invention is an adhesive film for attaching a semiconductor chip that can be applied when two or more semiconductor chips of the same size are laminated on a circuit board.

In one embodiment, the adhesive film of the present invention is a die-bonding adhesive layer formed by laminating two layers made of a mixed composition of a thermosetting resin having a melt viscosity of 100 to 1,000 Pa · s and a thermoplastic resin or an ultraviolet curable resin at 150 ° C. It is formed by laminating | stacking on the adhesion layer for ultraviolet curing wafer dicing.

In particular, the lower layer of the die-bonding adhesive layer in contact with the die-bonding adhesive layer is made of a mixed composition of a thermosetting resin and a thermoplastic resin, so that metal wires can be embedded without damage, and the upper layer of the die-bonding adhesive layer is a thermosetting resin and an ultraviolet curable layer. It is made of a mixed composition of resin, it is possible to achieve electrical insulation between the back of the chip before and after ultraviolet irradiation and the metal wire.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In adding reference numerals to components of the following drawings, it is determined that the same components have the same reference numerals as much as possible even if displayed on different drawings, and it is determined that they may unnecessarily obscure the subject matter of the present invention. Detailed descriptions of well-known functions and configurations will be omitted.

2 is a cross-sectional view of the adhesive film for a semiconductor package according to an embodiment of the present invention.

Referring to FIG. 2, in the case of a base film in the ultraviolet curable dicing film used as a support material for the die bonding adhesive layer due to the multilayer film structure, the type of the base film is not particularly limited. Can be used.

In more detail, the ultraviolet light-transmitting film is polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, polyethylene terephthalate film, polyurethane film, ethylene vinyl acetate film, ethylene (meth) Acrylic acid copolymer films, polystyrene films, polycarbonate films and films laminated or crosslinked with two or more of these components can be used.

In addition, the film of the UV-transmitting substrate may be given heat shrinkage by uniaxial or biaxial stretching treatment, and the heat shrinkage is between the adhesive layer on the substrate and the adhesive bonding layer for die bonding as the base film is heat shrinked after dicing. The side effect of facilitating chip pick-up can be obtained by expressing the effect of reducing the adhesion area of the chip.

The surface of the base film may be subjected to physical or chemical treatment such as corona treatment, plasma treatment, chromic acid treatment, etc. in order to improve adhesion with the adhesive layer formed on the base film. However, it is preferable not to use a component containing a stabilizer, a plasticizer, and the like containing a large amount of chlorine ions, which may contaminate the surface of the semiconductor wafer, such as polyvinyl chloride.

Although the thickness of the base film is not particularly limited, 20 to 200 μm is preferable, and the thickness of the expandable surface for smoothly picking up the diced chips in the semiconductor manufacturing process is more preferably 50 to 150 μm.

In the case of the UV curable wafer dicing adhesive layer 2 formed on the base film, a suitable product is selected from among UV curable dicing film products generally marketed for dicing process in a conventional semiconductor package manufacturing process. You may use it, or you may prepare and use an adhesive layer directly.

The ultraviolet curable wafer dicing adhesive layer (2) serves as a support for providing ductility and strength as an adhesive film, while exhibiting a certain adhesive force before the ultraviolet curing as a main component constituting the ultraviolet curable adhesive.

The ultraviolet-curable wafer dicing adhesive layer 2 has a photocurable oligomer which serves to reduce adhesiveness according to ultraviolet irradiation as it has a radiation-curable functional group such as a high molecular weight acrylic copolymer or a rubber component and a carbon-carbon double bond. It may be composed of a cross-linking agent component and a photoinitiator component to increase the cohesive force between the adhesive components as the component, and the polymer copolymerization component by the first thermal curing.

Although the high molecular weight acrylic copolymer is not limited, acrylic acid alkyl ester copolymers having 1 to 18 carbon atoms that can be obtained from (meth) acrylic acid ester monomers and (meth) acrylic acid derivatives may be used, preferably acrylic acid. Methyl, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate and the like can be used.

In addition, the UV-curable wafer dicing adhesive layer (2) formed of the high molecular weight acrylic copolymer includes a monomer component having a reactor capable of causing a crosslinking reaction with the alkyl ester for the purpose of modifying the cohesive force and heat resistance of the adhesive film. can do.

The monomer component includes carboxyl group-containing monomers such as carboxyl ethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid and fumaric acid, and acid anhydride monomers such as maleic anhydride and itaconic anhydride; ) Acrylic acid 2-hydroxyethyl, (meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 4-hydroxy butyl, (meth) acrylic acid 6-hydroxyhexyl, (meth) acrylic acid 8-hydroxy octyl, (4 -Hydroxyl group-containing monomers such as hydroxy methyl cyclohexyl) methyl (meth) acrylate, and acrylamide, acrylonitrile and the like can be used, and these reactor-containing monomer components may be one or two or more depending on the case. Can be used interchangeably. In particular, hydroxyl group-containing monomers such as hydroxyethyl acrylate can be introduced in that adhesion and adhesion with the adherend are easy to control.

The above-mentioned high molecular weight acrylic copolymer may have a molecular weight of 30,000 to 500,000 or less, and more preferably 50,000 to 200,000, in order to improve the initial adhesion of the adhesive film and the cohesion between the adhesive components.

If the molecular weight is less than this, the cohesive force of the adhesive film is lowered, which causes a phenomenon in which the adhesive component is transferred to a relative substrate after UV curing, and when it is larger than this, the compatibility with other adhesive components can be reduced, thereby achieving uniform adhesive properties. In addition, there is a problem in that a phase separation phenomenon occurs during UV curing, thereby inhibiting the original property of chip pick-up ease.

In addition, the proper amount of the acrylic copolymer is preferably used to be within 50 to 80 parts by weight with respect to 100 parts by weight of the adhesive film, when the amount is 50 parts by weight or less, the adhesive force of the adhesive film is not sufficient. When the weight ratio is 80 parts by weight or more, even after UV curing, the adhesive force may be too high and may inhibit smooth photopolymerization between the photosensitive oligomers, thereby preventing a smooth chip pickup.

The ultraviolet-curable wafer dicing adhesive layer (2) is a photocurable having at least one polymerizable carbon-carbon double bond in the main chain or side chain in the molecule in order to advance the photocuring reaction by ultraviolet rays together with the acrylic copolymer component. Oligomers can be used essentially. In this case, as the photocurable oligomer, urethane oligomer, urethane (meth) acrylate, trimethylol propane tri (meth) acrylate, tetramethylol methane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythrate Lititol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate oligomer and the like; The photocurable oligomer may be used alone or in combination of two or more in order to increase the effect in terms of adhesion characteristics.

In addition, the optimal amount of the photocurable oligomer is preferably within 10 to 30 parts by weight based on 100 parts by weight of the adhesive component. When the content is less than this, the effect of reducing the adhesion by UV curing is not sufficient. The unreacted oligomer content that is not cured increases, which may cause a problem of increasing adhesion.

In addition, since the adhesive film of the present invention is a multi-layer structure, after the first adhesive layer and ultraviolet irradiation, which is in close contact with the adhesive layer (2) for the ultraviolet curable wafer dicing in terms of structure, in order to more effectively lower the interface adhesive force of silicone acrylate It is preferable to use a mixture of oligomers. However, in the case of silicone acrylate oligomers, when excessively added to the adhesive component, unreacted oligomers may move to the first adhesive layer after UV irradiation, which may cause a problem of deteriorating the adhesion between the chip and the substrate in the subsequent chip attachment process. It is preferable that the rate mixing amount does not exceed 20% of the photocurable oligomer usage.

The ultraviolet curable wafer dicing adhesive layer (2) may adjust the initial adhesion and cohesion by increasing the number average molecular weight by appropriately mixing the internal curing agent in the acrylic pressure-sensitive adhesive component before the ultraviolet irradiation, the internal curing agent is epoxy-based heat curing A curing agent, a phosphate-based curing agent or an isocyanate-based curing agent can be added and used, and more preferably, an isocyanate-based curing agent which can easily control the curing reaction temperature, speed and adhesive force can be used.

The isocyanate hardener in the internal curing agent is an aromatic polyisocyanate compound, an alicyclic polyisocyanate compound, an aliphatic polyisocyanate compound and a trimer of polyhydric isocyanate compounds thereof, and terminal isocyanate urethane prepolymers obtained by reacting these polyisocyanate compounds with a polyol compound. It may include.

The organic polyvalent isocyanate compound is preferably added in an amount of 0.1 to 10 parts by weight, in particular 1 to 5 parts by weight, based on 100 parts by weight of the pressure-sensitive adhesive composition, wherein the pressure-sensitive adhesive containing the internal curing agent is generated when the base film is expanded or picked up. It is also possible to add an antistatic agent in that it has a chip crack prevention effect by suppressing static electricity.

In addition, a photopolymerization initiator having a function of decomposing and generating free radicals that may cause an addition reaction between carbon-carbon double bond groups contained in the photocurable oligomer in accordance with ultraviolet irradiation is mixed in the pressure-sensitive adhesive to provide efficient photocuring even at a low ultraviolet irradiation amount. Can cause. As such photoinitiators, any one can be used as long as it is activated by irradiating light of a wavelength of 250 to 800 nm, and may be used alone or in combination of two or more thereof.

Such photopolymerization initiators include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl, benzoin dimethyl ketal, 2 , 4-diethyl thioxanthone, hydroxy cyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl and β-chloroanthraquinone It is preferable to include within 0.5 to 5 parts by weight of the pressure-sensitive adhesive composition. If it is out of the above content range may lower the photo-initiation efficiency or problems in storage of the adhesive.

The die-bonding adhesive layer of the present invention exhibits very good adhesion to the back surface of the wafer at a relatively low temperature of 60 ° C. or lower, and at the same time requires very opposite characteristics to maintain a low peeling force with the UV-curable wafer dicing adhesive layer 2 below. According to the present invention, after the two layers having different characteristics from the die bonding adhesive layer are separately manufactured, a die bonding adhesive layer for realizing two compatible properties can be realized simultaneously by manufacturing a multilayer structure adhesive layer through a lamination process. have.

Particularly, in the case of the resin composition of the first bonding layer 8 for die bonding in contact with the adhesive layer 2 for dicing, a metal wire connected to the connection bump on the lower chip is generally used in a chip stacking process performed at a temperature of about 150 ° C. It is required to have a melt viscosity of 100 to 10,000 Pa · s at 150 ° C. so as to be embedded without damage, and the resin composition of the second adhesive layer 9 attached to the back surface of the wafer has ultraviolet and thermosetting properties. Prior to curing, it can be easily attached to the back of the wafer in the attaching process at 60 ° C. After UV curing, the glass has a glass transition temperature (Tg) of 100 ° C or higher, which prevents physical contact between the back of the wafer and the metal wire. As it proceeds to the semiconductor package reliability can be more stably implemented.

The resin composition constituting the first bonding layer 8 for die bonding can be used as long as it is a common adhesive component capable of forming a film, but more specifically, a mixture of a thermoplastic resin and a thermosetting resin can be used.

The thermoplastic resin component imparts mutual bonding force so that each adhesive component can be filmed in a mixed state in the pre-cured state, and after curing, the thermoplastic resin component is uniformly dispersed in the adhesive layer, thereby making it resistant to stress generated from the inside. In the case of thermosetting resin components, the viscosity of the thermosetting resin component decreases rapidly with heating before curing, thereby improving wafer adhesion and die-bonding adhesion. After curing, heat resistance and It is effective in that moisture resistance improves and it gives semiconductor reliability.

The thermoplastic resin component of the resin composition of the first bonding layer 8 for die bonding is not particularly limited, but polystyrene, acrylic acid copolymer, polyimide, polyetherimide, polyamide, polyurethane, polyphenylene ether resin, or the like may be used. Acrylic acid copolymers, polyester resins and polyimide resins may be used in view of dispersibility with the thermosetting resin and solubility in organic solvents. In addition, the resins may be used alone or in combination of two or more thereof, and preferably, two or more thereof may be mixed to produce effects such as heat resistance, moisture resistance, adhesiveness, and glass transition temperature controlability of the adhesive film. have.

In addition, in the construction of the adhesive film, the mixing ratio of the thermoplastic resin with the thermosetting resin should be determined in consideration of the above properties in general, but in general, it is preferable that the thermoplastic resin component be incorporated within 20 to 50 parts by weight with respect to 100 parts by weight of the thermosetting resin. Do. If the amount is less than 20 parts by weight, the melt viscosity of the resin is too low in the chip attaching process at 150 ° C, and the resin flows out to the outside of the chip to maintain uniform thickness and smooth chip attachment. If the abnormality is mixed, the resin melt viscosity may increase, which may cause a problem in that the metal wire cannot be embedded in the resin layer. This is because the thermoplastic resin component has a much larger molecular weight distribution than the thermosetting resin component, and in order to optimally control the adhesive flow, it is necessary to control an appropriate mixing ratio of the plastic resin and the curable resin.

The acrylic acid copolymer in the resin composition of the first bonding layer 8 for die bonding includes a copolymer including at least one of acrylic acid, acrylic acid ester, methacrylic acid ester, and acrylonitrile as a monomer component, and in particular, adhesive curing For the purpose of improving the heat resistance afterwards, a structure including a functional group in the side chain is more preferable so that the curing reaction with the epoxy resin is possible.

And the functional group addition-type acrylic monomer may be used a copolymer including glycidyl methacrylate having a glycidyl ether group, hydroxy methacrylate having a hydroxyl group, carboxyl methacrylate having a carboxyl group, and the like, wherein the adhesive The number average molecular weight of the acrylic acid copolymer may be 10,000 to 1,000,000, more preferably 50,000 to 500,000 to improve the film properties and heat resistance of the composition.

The polyester resin in the resin composition of the first bonding layer 8 for die bonding is prepared by esterification from divalent or higher carbonyl acid and divalent or higher glycol component, and is not particularly limited as long as it has good compatibility with epoxy resin. .

In the composition of the polyester resin, for example, terephthalic acid, isophthalic acid, orthophthalic acid, 1,5-naphthalic acid, 2,6-naphthalic acid, 4,4'-diphenyldicarboxylic acid, 2 Aromatic dibasic acids such as 2'-diphenyldicarboxylic acid, 4,4-'diphenyl ether dicarboxylic acid, adipic acid, azeline acid, sebacic acid, 1,4-cyclohexanedicarboxylic acid, 1,3- Aliphatic and alicyclic dibasic acids such as cyclohexanedicarboxylic acid, 1,2-cyclohexanedicarboxylic acid, 4-methyl-1,2-cyclohexanoic acid dicarboxylic acid and dimer acid are suitable.

Moreover, as a glycol component in the composition of the said polyester resin, ethylene glycol, propylene glycol, 1, 3- propanediol, 2-methyl- 1, 3- propanediol, 1,2-butanediol, 1, 3- butanediol, 1 , 4-butanediol, 1,5-pentanediol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, neopentyl glycol, diethylene glycol, dipropylene glycol, 2,2,4-trimethyl- 1,3-pentanediol, cyclodimethol, neopentylhydroxy pivalinic acid ester, ethylene oxide adduct and propylene oxide adduct of bisphenol A, ethylene oxide adduct and propylene oxide adduct of hydrogenated bisphenol A, 1,9- Nonanediol, 2-methyloctanediol, 1,10-dodecanediol, 2-butyl-2-ethyl-1,3-propanediol, tricyclodecanedimethol, and the like, and polyethylene glycol, polypropylene glycol, poly Polyether glycol components such as tetramethylene glycol It can be used.

In addition, a functional group addition type component may be added to the side chain for the purpose of adding a functional group so as to enable crosslinking reaction with the epoxy resin to improve heat resistance. Such side-chain functional carbonyl acid components include benzophenone tetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, ethylene glycol bis-anhydro trimellitate, glycerol tris-anhydro trimellitate, and the like.

The appropriate number average molecular weight of the polyester resin may be used from 5,000 to 200,000 in terms of adhesive properties and heat resistance of the adhesive layer for die bonding, and more preferably from 10,000 to 100,000.

In addition, the polyimide resin is not limited to the form having an imide bond in the side chain or cast iron chain, but the number average molecular weight is within 5,000 to 500,000, preferably 10,000 to 50,000.

The polyimide-based resin has a thermoplastic polyimide-based resin having no reactive functional group and a functional group capable of reacting with the thermosetting resin by heating, such as a carboxyl group or a hardoxy group, on the side chain, and generally has an aromatic diamine and an aromatic tetra An oligomeric polyimide resin can be obtained by synthesizing a polyamic acid precursor from a mixture with carboxylic dianhydride and heating it again to dehydrate imidization.

The acid dianhydride monomer used for superposition | polymerization of the said thermoplastic polyimide resin is 3,3 ', 4,4'- biphenyl tetracarboxylic dianhydride, 3,3', 4,4'- benzophenone tetracarboxylic acid 2 anhydride. , 4,4 -'- oxydiphthalic acid dianhydride, ethylene glycol bistrimellitic dianhydride, 4,4 -'- bisphenol A dianhydride, pyromellitic anhydride, 2,3,6,7-naphthalene tetracarboxylic dianhydride , 1,4,5,7-naphthalene tetracarboxylic dianhydride, 1,2,5,6-naphthalene tetracarboxylic dianhydride, 1,2- (ethylene) bis (trimelitate dianhydride), 1,3 -(Trimethylene) bis (trimerate anhydride) and the like, and the above substances may be used alone or in combination of two or more thereof.

The aliphatic or aromatic diamines reacted with the acid dianhydride include methylenediamine, ethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, heptamethylenedidiamine, octamethylenediamine, 2,4-diamino Toluene, m-xylenediamine, p-xylenediamine, m-phenylenediamine, p-phenylenediamine, 2,6-diaminopyridine, 2,5-diamino pyridine, 1,4-diaminocyclohexane , Piperazine, 4,6-dimethyl-m-phenylenediamine, 2,5-dimethyl-p-phenylenediamine, 4,4'-diaminodiphenylpropane, 3,3'-diaminodiphenyl ethane, 4,4'-diaminodiphenylmethane, 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 4,4'-dia Minodiphenyl ether, 3,3'- diamino biphenyl, 3,3'- dimethyl- 4,4'- diamino biphenyl, 1, 3-bis (3-aminophenoxy) benzene, 2, 2- Bis 4- (4-amino Oxy) phenyl propane, 1,3-bis (4-aminophenoxy) benzene, bis-4- (4-amino phenoxy) phenylsulfone, bis-4- (3-aminophenoxy) phenylsulfone and p-bis (2-methyl-4-aminopentyl) benzene and the like, and the aliphatic and aromatic diamines may be used alone or in combination of two or more thereof.

And more preferably, diamino polysiloxane can be used as one of the diamine components of the said polyimide resin. The diamino polysiloxane is 1,3-bis (3-aminopropyl) tetramethylsiloxane, α, ω-bis (3-aminopropyl) polydimethylsiloxane, 1,3-bis (4-aminophenyl) tetramethylsiloxane, α, ω-bis (4-aminophenyl) polydimethylsiloxane, 1,3-bis (3-aminophenyl) tetramethylsiloxane, α, ω-bis (3-aminophenyl) polydimethylsiloxane, 1,3-bis (3-aminopropyl) tetraphenylsiloxane, alpha, omega-bis (3-aminopropyl) polydiphenylsiloxane, etc. can be used, The said substance can be used individually or in mixture of 2 or more types. At this time, the diamino polysiloxane is preferably used within 5 to 50 mol% of the total amount of the diamine component.

The thermosetting resin that can be used as the composition of the first bonding layer 8 for die bonding is not cured by irradiation with ultraviolet rays, but has a three-dimensional network structure and heat-resistant to adhere to the adherend with heating. It includes resin which can be. Preferably, an epoxy resin, an unsaturated polyester resin, a thermosetting acrylic resin, a phenol resin, a diaryl phthalate resin, a polyurethane resin, etc. may be included, and these thermosetting resins may be used alone or in combination of two or more thereof.

Although not limited, the composition of the first bonding layer 8 for die bonding has a low melt viscosity before curing and is easy to apply to the attaching process, and an epoxy in that it can express the opposite property to exhibit high heat resistance after curing. It is preferable to use resin.

The epoxy resin can be used a variety of conventionally known epoxy resin, but usually, those having a molecular weight of 300 ~ 5000 can be used, and more preferably a solid epoxy resin of less than 500 ~ 2000 can be used.

In the case of the epoxy resin, since it is common to classify the melting characteristics based on the softening point by the round ball method, the appropriate softening point of the solid epoxy resin may be 30 to 100 ° C, preferably 40 to 70 ° C. When the softening point is 30 ℃ or less, the adhesive force on the surface of the adhesive layer is increased at room temperature, chip picking properties after dicing is reduced, and when the softening point is 100 ℃ or more, it is difficult to obtain sufficient resin fluidity at 150 ℃ chip attach process temperature, chip stacking It may cause a problem to damage the metal wire of the lower part.

Although it is not specifically limited, The said epoxy resin is bisphenol-A, bisphenol-F, bisphenol-S, cancelled bisphenol-A, hydrogenated bisphenol-A, bisphenol-AF, biphenyl, naphthalene, florene, Bifunctional or polyfunctional epoxy resins such as phenol novolak type, cresol novolak type, tris high hydroxyphenylmethane type, tetraphenylmethane type and the like can be used, more preferably hardenability, adhesiveness and heat resistance, moisture resistance, etc. The bisphenol A type, cresol novolak type, phenol novolak type epoxy resins and the above substances which are relatively excellent in terms of physical properties can be used in combination.

The die-bonding composition for the first adhesive layer 8 may be used in combination with a curing agent if necessary, and the curing agent may be used without particular limitation, as long as it is a known one. In particular, a phenol resin, an acid anhydride, an amine compound, an imidazole compound, Polyamine compounds, hydrazide compounds, dicyandiamide, etc. can be used.

More preferably, even after long-term storage at room temperature, a latent curing agent having a small change in adhesive properties may be used more appropriately, such that a phenol resin, an aromatic amine compound, and dicyandiamide may be used. Moreover, these hardeners can also be used individually or in combination of 2 or more types as needed.

The phenol resins include phenol novolak resins, cresol novolak resins, bisphenol A novolak resins, phenol aralkyl resins, poly-p-vinylphenol t-butylphenol novolak resins and naphthol novolak resins, and the like. Amine hardeners include m-xylenediamine, m-phenylenediamine, diaminodiphenylmethane, diaminodiphenylsulfone, diaminodiethyldiphenylmethane, diaminodiphenylether, 1,3-bis (4-aminophenoxy Benzene, 2,2'-bis [4- (4-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, 4,4'-bis (4-aminophenoxy C) biphenyl, 1,4-bis (4-aminophenoxy) benzene, and the like.

The curing agent component is preferably mixed in an amount of 10 to 40 parts by weight based on 100 parts by weight based on the thermosetting resin component in the adhesive composition. On the other hand, if it is mixed in excess of 40 parts by weight, the reactivity with the resin is increased to cause a problem that the physical properties such as handleability, long-term storage properties of the adhesive film is greatly reduced.

In addition, the curing agent may be used in combination with the composition of the first bonding layer 8 for die bonding, and various curing accelerators known in the art may be used, in particular amine, imidazole, phosphorus, boron, and phosphorus. -Curing accelerators, such as a boron system, can be used. At this time, the optimum blending amount of the curing accelerator is preferably from 0.1 to 10 parts by weight, more preferably from 0.5 to 5 parts by weight with respect to 100 parts by weight of the thermosetting resin, and may be used alone or in combination of two or more. It can also be used.

In addition, an organic material or an inorganic material may be added to the composition of the first bonding layer 8 for die bonding, and the organic material may be a silane coupling agent, a titanium coupling agent, a surface conditioner, an antioxidant, a tackifier, or the like. It includes.

The inorganic material includes alumina, silica, aluminum hydroxide, magnesium hydroxide, calcium carbonate, and the like, and the inorganic particles have a good effect in terms of adhesiveness and cutability of the adhesive film. Dye etc. can also be added and used.

The mixing ratio of the inorganic material is not particularly limited, but is preferably 50 parts by weight or less in the adhesive composition, the addition amount is more than 50 parts by weight, the solvent dissolving power of the adhesive composition is poor to ensure uniform coating properties, in particular low temperature wafer adhesion As a result of impairing the wettability with the adherend in the process, a problem may arise in that sufficient adhesion cannot be obtained.

The resin composition constituting the second bonding layer 9 for die bonding, which is formed by being bonded to the first bonding layer for die bonding, is not particularly limited as long as it is an adhesive composition having properties that are cured by ultraviolet rays and heating. In order to prevent the physical contact between the lower metal wire and the bottom of the upper chip in the high temperature chip stacking process after wafer dicing, it is required that the glass transition temperature of the adhesive layer be at least 100 ° C. after UV curing. By the ultraviolet curing component constituting the second bonding layer (9) for die bonding can be implemented through the glass transition temperature increase phenomenon according to the progress of the curing reaction during ultraviolet irradiation.

More specifically, in order to simultaneously satisfy wafer adhesion in the 60 ° C region and wire insulation in the 150 ° C region, an adhesive layer having a glass transition temperature of less than or equal to room temperature generally increases the glass transition temperature of 70 ° C to 100 ° C with UV curing. It is preferable to have a change, and in particular, an increase change in the glass transition temperature of 80 ° C to 90 ° C is more preferable.

For example, when the EO glass transition temperature of the second bonding layer 9 for die bonding changes to the insulating layer 12 according to ultraviolet curing increases from 90 ° C. to 90 ° C. or more, the glass transition before ultraviolet curing is performed. As the temperature is 10 ℃, not only the 60 ℃ wafer adhesion strength is more than 200g / cm, but also the UV transition has a glass transition temperature of 100 ℃, so the physical contact between the metal wire and the back of the upper chip can be effectively applied even in the 150 ℃ chip attachment process. You can prevent it.

If the change in the glass transition temperature of the second bonding layer 9 for the die bonding is lower than 70 ° C, it is difficult to simultaneously satisfy the 60 ° C wafer adhesion force and the high temperature insulation property. On the contrary, when the change in the glass transition temperature becomes 10 ° C or higher, ultraviolet irradiation is performed. As the glass transition temperature is lowered to 0 ° C. or less, poor cutting property of the adhesive layer is caused in the wafer cutting process performed at room temperature.

Among the resin compositions constituting the second bonding layer 9 for die-bonding, components having ultraviolet curing properties may undergo a polymerization reaction by radical initiators such as acryloyl, methacryloyl, and vinyl groups at the terminal or side chain of the molecule. The composition having one or more photopolymerization functional groups and having a property of increasing glass transition temperature according to ultraviolet curing is not particularly limited, but more preferably epoxy acrylate, polyester acrylate, urethane acrylate, polyether acrylate, or the like. The acrylate oligomer component of can be used.

In addition, when considering the characteristics of the heat resistance side of the package material, epoxy acrylate-type resin is suitable, and in terms of enhancing the adhesion to the wafer, it is preferable to apply a polyester acrylate-type resin.

In addition, in order to improve the properties capable of ultraviolet curing in a short time, a bifunctional or more than one multifunctional monomer component may be added, and the multifunctional monomer may be 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, A small amount of components such as diethylene glycol diacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, diethylol propane tetraacrylate, dipentaerythritol hexaacrylate, and the like can be used.

In the case of the acrylate oligomer and the monomer component, the oligomer content is preferably 50 to 80 parts by weight and the monomer content is 20 to 50 parts by weight per 100 parts by weight of the ultraviolet curable resin. As a result, the effect of increasing the glass transition temperature of the adhesive layer is insufficient or a fast curing rate cannot be obtained.

In addition, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin as photoinitiators for ultraviolet curing, as in the lower adhesive layer for dicing. Benzoic acid, benzoin benzoic acid methyl, benzoin dimethyl ketal, 2,4-diethylthioxanthone, hydroxy cyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, Dibenzyl, diacetyl and β-chloroanthraquinone may be used, and the photoinitiator is preferably added within 0.5 to 5 parts by weight of the pressure-sensitive adhesive composition. If it is out of the above content range, the photo-initiation efficiency may be lowered or time-lapse stability problems may occur in the adhesive storage.

The thermosetting resin composition mixed with the ultraviolet curable resin among the resin compositions constituting the second bonding layer 9 for die bonding is not particularly limited as long as it is a component that can further advance the thermosetting reaction in the heating step after the ultraviolet curing. However, in order to improve the interfacial adhesion between the adhesive layers produced in the lamination state with the first bonding layer 8 for die bonding, the thermosetting resin composition is kept the same as much as possible to reduce the interlayer adhesion force due to the phase separation phenomenon between the polymer compositions. It can prevent.

Moreover, it is preferable to mix the optimal compounding quantity of the said thermosetting resin component in 10-40 weight part or less of a thermosetting resin composition per 100 weight part of ultraviolet curable resin compositions.

If the content of the thermosetting resin component is 10 parts by weight or less, the heat curing property may not be sufficiently exhibited after UV curing, and the heat resistance may be deteriorated. When the content of the thermosetting resin component is 40 parts by weight or more, ultraviolet curing may not proceed sufficiently. In the process of attaching the chip at 150 ° C., a problem arises in that a wire blocking effect cannot be sufficiently obtained.

The second bonding layer 9 for die bonding may be protected by a release treated protective film, and the release film functions as a protective material for protecting the die bonding adhesive layer surface until the wafer is attached. It is preferable to surface-treat to make peeling easier.

The protective film may be a silicone-based, fluorine-based and long-chain alkyl acrylate-based release agent and the like in a base film such as polyethylene, polypropylene or polyethylene terephthalate.

Hereinafter, the method for manufacturing the adhesive film of the present invention will be described in detail with reference to the following <Examples> and FIGS. 3A to 3C. This is not an example limiting of the present invention.

<Example 1>-adhesive layer composition

(A1) A stirrer and a reflux condenser were installed in a 1 L glass reactor capable of maintaining a temperature at 80 ° C. using cooling water, and polymerization was performed using a device capable of detecting a temperature change according to reaction time with a thermometer. 48.17 g of butyl acrylate to be polymerized with ethyl acetate, 10.01 g of ethyl acrylate and 3.26 g of 2-hydroxyethyl methacrylate were placed in a polymerization reactor, and charged with nitrogen to remove gas while stirring for 30 minutes. Then, 0.54 g of benzoyl peroxide (70%) was dissolved in ethyl acetate as a polymerization initiator and added dropwise using a dropping funnel, followed by polymerization under reflux at 80 ° C for 12 hours. The content of the solid content after polymerization was corrected with an ethyl acetate solvent to be 40% to obtain an acrylic pressure-sensitive adhesive solution having a viscosity of 10,000-15,000 cps at a temperature of 23 ° C.

To 35 g of the pressure-sensitive adhesive solution, 0.8 g of coronate-L (Nippon Polyuretan Co.) as an aromatic polyisocyanate curing agent, 3.8 g of urethane acrylate (Sartomer, CN-940) with a photocurable oligomer, and silicone acrylate (Sartomer, CN- 9800) 0.6 g and 0.2 g of Igacure 184 (Ciba Specialty) as a photoinitiator were mixed well in a solvent, and then the photocurable pressure-sensitive adhesive composition was uniformly made to have a thickness of 10 μm on a 100 μm thick polypropylene film base film. After the coating was conducted, the UV curable dicing film was obtained by drying at 80 ° C. for 10 minutes.

(A2) To 35 g of the acrylic adhesive solution prepared in (A1), 0.8 g of Coronate-L (Nippon Polyuretan Co., Ltd.) as a curing agent and 8 g of CN-940 (urethane acrylate, Satomer) as a photocurable oligomer and an igureur as a photoinitiator Except having mixed 0.5g of 184 (Ciba specialty company), the adhesive film for dicing was obtained on the same conditions all.

(A3) UV-curable dicing adhesive film as a general product for comparing the characteristics with the pressure-sensitive adhesive polymer (UV-curable pressure-sensitive adhesive film, product name: UHP-110M3 manufactured by Nippon Electric Chemical Co., Ltd.)

<Example 2>-Die bonding adhesive layer

As shown in Table 1 below, a die compounded with thermoplastic resins such as acrylic resins, polyester resins, and polyimide resins, and components of thermosetting resins composed of epoxy resins, phenol resins, aromatic diamines, silicas, and curing accelerators in the ratios shown in the table. Toluene / methyl ketone 50 was prepared by preparing four compositions of a first adhesive layer composition for bonding, an ultraviolet curable resin component composed of an acrylate oligomer and a monomer, and a second adhesive layer composed of a mixed component of the thermosetting resin component. : It was mixed and dissolved uniformly for 2 hours by the mixed solvent mixed in 50 parts by weight. After applying the mixed solution on a release-treated polyester film, the mixed solvent was dried and removed in a hot air dryer at 140 ° C. for 5 minutes, and the first adhesive layer for die bonding having a thickness of 40 μm and having a thickness of 40 μm was obtained. The second adhesive layer having a thickness of 20 μm was obtained and the two adhesive layers were laminated by 100 ° C. lamination, so that a two-layer adhesive film for die bonding having a thickness of 60 μm could be finally obtained.

Epoxy Resin 1: Bisphenol A Epoxy

              (Kukdo Chemical YD-011 Equivalent: 450 g / eq, Softening Point: 70 ° C)

Epoxy Resin 2: Cresol Novolac Epoxy

              (Kukdo Chemical YDCN-505 Equivalent: 200g / eq, Softening Point: 62 ℃)

Epoxy Resin 3: Cresol Novolac Epoxy

              (Kukdo Chemical YDCN-509 Equivalent: 205 g / eq, Softening Point: 93 ° C)

Epoxy Resin 4: Bisphenol A Epoxy

              (Kukdo Chemical YD-128 Equivalent: 180g / eq, Softening Point:-)

Curing agent 1: phenol novolak resin

         (Gangnam Hwaseong TD-2131 OH equivalent: 110 g / eq, softening point: 80 ° C)

Curing Agent 2: Phenol Novolak Resin

         (Gangnam Hwaseong TD-2090, OH equivalent weight: 115 g / eq, softening point: 125 ° C)

Curing agent 3: diaminodiphenylsulfone

          (Wakayama Seika, Seikacure-S, Molecular Weight: 248)

Plastic Resin 1: Acrylic Copolymer

           (Nippon Xeon AR71, Pattern viscosity: 40, Glass transition temperature: -18 ℃)

Plastic Resin 2: Polyimide Resin

           (Shin-Etsu Corporation molecular weight: 30,000 glass transition temperature 75 ℃)

Plastic Resin 3: Polyester Resin

           (ESCEI ES-360, glass transition temperature: 17 ℃, number average molecular weight: 28,000)

Plastic Resin 4: Polyester Resin

           (ESCEI ES-100, glass transition temperature: 65 ℃, number average molecular weight: 21,000)

Curing accelerator: imidazole compound (sichokuizable, curazole 2PH)

Additive: Synthetic silica (average particle size 1um, maximum particle size 10um)

Oligomer 1: epoxy modified acrylate (Japanese gunpowder, KAYARAD R-381)

Oligomer 2: Epoxy modified acrylate (Miwon Corporation, MIRAMER EA2259)

Oligomer 3: Multifunctional polyester acrylate (Miwon Corporation, MIRAMER PS-430)

Oligomer 4: Multifunctional polyester acrylate (Donga synthesis, Aronix M-8100)

Monomer 1: dipentaerythritol hexaacrylate (synthetic synthetic, Aronix M-403)

Monomer 2: Ditrimethylolpropane tetraacrylate (Miwon Corporation, MIRAMER M410)

Monomer 3: Trimethylolpropane triacrylate (Miwon Corporation, MIRAMER M300)

Initiator: Igacure 814 (Ciba specialty)

By using the pressure-sensitive adhesive layer and the adhesive layer obtained in the <Examples 1 and 2> above, nine adhesive films having a multilayer structure for dicing and die bonding, in which the pressure-sensitive adhesive layer and the adhesive layer were laminated, were manufactured. Then, as a result of evaluating each multilayer film based on the following physical property evaluation method, it was confirmed that the excellent adhesive film in terms of the overall physical properties as shown in Table 2 below.

(1) wafer adhesion

After manufacturing a multilayer film laminated with a die-bonding first and second adhesives and an ultraviolet curable pressure-sensitive adhesive film (see FIG. 3A), this was again an 8-inch silicon wafer (800 g of Disco, manufactured by Disco) on a 60 ° C hot plate. 840 grinding equipment), and then lamination is carried out using roll lamination equipment to roll die 2nd adhesive layer and the back side of the wafer. It was done. Thereafter, the adhesive film was cut to a width of 10 mm (see FIG. 3B), and then left at 23 ° C. (room temperature) for 30 minutes, and then the peel angle was 180 ^° with the polyester film substrate in a 23 ° C. constant temperature room. When peeling off, the peel strength was measured by measuring the peel strength. (Tension rate 300 mm / min of the adhesive film)

(2) Peel strength before and after ultraviolet irradiation

The first and second adhesive layers for die bonding are sequentially laminated on the pressure-sensitive adhesive layer previously coated on the base film (see FIG. 3C), and then rolled on the back surface of the wafer in the same manner as the wafer adhesion force measurement conditions as described in the above (1). After lamination, the peel strength was measured before UV irradiation by peeling off the base film and the adhesive film, and further, 100 mJ / cm ² in the side direction of the base film. After irradiating ultraviolet rays of intensity, peeling was performed to measure the change in peel strength after ultraviolet irradiation.

(3) chip adhesive strength

In order to measure the peel strength, roll lamination is carried out at a temperature of 120 ° C. so that the second bonding layer for die bonding faces the back surface of the silicon wafer having a thickness of 800 μm so as not to be damaged even under high load. The mirror surfaces of the Oz copper foil were faced to each other and subjected to roll lamination under conditions of 100 ° C.

By in this state the strength is measured while peeling 180 ^о the bonding strength between the chip and the copper foil was obtain a cured before adhesion was also measured after a high temperature curing process, the specimens for 175 ℃ x 2 hr, 180 ^о peel strength .

(4) chipping resistance

After the back surface of the 8-inch diameter silicon wafer on which the circuit pattern was formed was polished to a thickness of 70 um, a mirror-treated wafer was used. Thereafter, as described in (1) above, the lamination was performed with the second layer of the die-bonding layer at 60 ° C. and 10 mm × 15 mm. Full cutting dicing (Disco Co., Ltd., DFD-651 dicing equipment) was performed in size, and the presence or absence of the chipping phenomenon at the time of dicing was observed and classified into the following criteria.

○: Chip fragments are generated at the size of 30um or less at the chip edge.

△: Chip fragments occur within 30 ~ 60um at chip edge

×: chip fragments over 60um on chip edge

(5) wire embedding and insulation

After attaching a rectangular bottom chip having a size of 10mm x 15mm to the leadframe substrate, use a gold wire with a diameter of 30um between the wire bump on the top of the chip and the leadframe lead terminal so that the maximum wire loop height is 50um. / S 1488 T) Complete the bottom chip attachment by wire bonding using equipment. After the dicing of the adhesive film and the wafer as shown in (4) with the adhesive film produced through each embodiment attached to each batch, and picking up the individual chips, for 1 second on the lower chip preheated to 150 ℃ It is pressed to complete a package in which two chips are stacked. After polishing using # 1000 abrasive sandpaper until the cross section of the wire embedding layer is revealed, the presence of wire damage and the degree of voiding are classified by microscopic magnification based on the following criteria.

○: No damage to wires and voids inside the wire embedding layer

△: no damage to wire but some voids

X: A state in which the wire is pressed by the adhesive layer to reach the lower layer upper part or to the back side of the upper chip.

(6) heat resistance

In order to evaluate the heat and moisture resistance according to the moisture absorption of the die-bonding adhesive film in the semiconductor package, a hardened specimen of the chip and the copper foil was deposited as described in the above (3) for 30 seconds in a 260 ° C lead bath, followed by a microscope Observation confirmed the formation of bubbles. In addition, the cured specimen was left to stand at 85 ° C./85%RH for 48 hours to absorb moisture, and then immersed in a 260 ° C. bath for 30 seconds to evaluate heat resistance after absorption.

The heat resistance evaluation criteria are as follows.

○: Bubble generation or interfacial peeling area is 5% or less of chip area

△: bubble generation or interfacial peeling area within 5-30% of chip area

X: Bubble generation or interface peeling area is 30% or more of the chip area

Referring to Example 1 to Comparative Example 5 of Table 2, it can be seen that the wafer adhesion force varies depending on the difference in the glass transition temperature (Tg) before and after the ultraviolet light, the glass in the comparative example as well as the embodiment of the present invention. It can be seen that the larger the difference in the transition temperature, the larger the wafer adhesion. More specifically, Comparative Example 2, which has the highest glass transition temperature of 135 ° C., exhibits a high wafer adhesion of 720 g / cm, while Comparative Example 1, which has the lowest glass transition temperature of 55 ° C., shows the lowest wafer adhesion of 150.

In addition, referring to Table 2, Example 1 of the present invention in which two die bonding adhesive layers (die adhesive films) were grown by mixing a thermosetting resin and an ultraviolet curable resin or a thermoplastic resin in consideration of the glass transition temperature (Tg). It can be seen that Examples 4 to 4 are superior to Comparative Examples 1 to 5 in both chipping resistance, wire embedding, wire insulation, and heat resistance before and after moisture absorption.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "having" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art, and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

1A-1B are cross-sectional views of a semiconductor package according to the prior art.

2 is a cross-sectional view of an adhesive film for a semiconductor package according to an embodiment of the present invention.

Figure 3a is a schematic diagram of the pick-up process after the wafer dicing the adhesive film is attached according to an embodiment of the present invention.

Figure 3b is a wafer schematic diagram attached with an adhesive film according to an embodiment of the present invention.

Figure 3c is a schematic view of the wire embedded chip lamination process using an adhesive film according to an embodiment of the present invention.

        <Description of the symbols for the main parts of the drawings>

1: semiconductor chip of 100 mu m or more 2: conventional spacer film of 100 mu m or more

3: adhesive film for die attach 4: wiring board

5: metal wire 6: chip crack

7: contact between chip back and wires 8: first bonding layer for die bonding

9: 2nd bonding layer for die bonding 10: semiconductor chip below 100 micrometers

11: site where the wire is embedded 12: insulating layer after UV curing

13 ring frame for wafer process 14 ultraviolet curable dicing film

15 rotary blade for dicing 16 chip pick-up tool

17: pickup needle

Claims (7)

UV curable wafer dicing adhered to the upper part of the base film, consisting of 65 to 80 parts by weight of the high molecular weight acrylic copolymer, 1 to 5 parts by weight of the thermosetting agent, and 19 to 30 parts by weight of the photocurable oligomer based on 100 parts by weight of the adhesive layer Adhesive layer; A first bonding layer for die bonding, wherein the adhesive layer for ultraviolet curable wafer dicing is used as a support material and is made of a mixed composition composed of 20 to 50 parts by weight of a thermoplastic resin based on 100 parts by weight of a thermosetting resin; And It is formed by bonding to the first bonding layer for die bonding, consisting of a mixed composition consisting of 10 to 40 parts by weight of the thermosetting resin on the basis of 100 parts by weight of the ultraviolet curable resin, after UV curing, implements electrical insulation between the metal wire and the back of the semiconductor chip. An adhesive film for a semiconductor package comprising a second bonding layer for die bonding. The adhesive film for a semiconductor package according to claim 1, wherein the first bonding layer for die bonding has a melt viscosity within 100 to 1,000 Pa · s based on 150 ° C. The adhesive film for a semiconductor package according to claim 1, wherein the glass transition temperature of the second bonding layer for die bonding is increased by 70 ° C to 100 ° C based on before and after UV curing. The method of claim 1, wherein the thermosetting resin of the first adhesive layer for die bonding Polyfunctional epoxy resins having a softening point of 30 ° C to 100 ° C;  A curing agent comprising any one of an aromatic diamine, a phenol resin, and a mixture of the two materials; And Adhesive film for semiconductor packages comprising a curing accelerator made of any one of amine-based, imidazole-based, phosphorus-based, boron-based and phosphorus-boron-based. The method of claim 1, wherein the thermoplastic resin of the first bonding layer for die bonding Adhesive film for a semiconductor package, characterized in that the acrylic acid copolymer, polyester resin, polyimide resin and a mixture of the above materials. According to claim 1, wherein the ultraviolet curable resin component of the second bonding layer for die bonding 50 to 80 parts by weight of polyester modified acrylate oligomer and 20 to 50 parts by weight of bifunctional acrylate based on 100 parts by weight of the ultraviolet curable resin component Adhesive film for semiconductor packages comprising a monomer. The method of claim 1, wherein the thermosetting resin of the second adhesive layer for die bonding comprises 30 to 50 parts by weight of acrylic copolymer, 20 to 40 parts by weight of polyfunctional epoxy resin and 10 to 30 parts by weight of a curing agent. Adhesive film for semiconductor packages.

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