KR100855489B1 - Flat display Device and method for manufacturing thereof - Google Patents

Abstract

The present invention comprises a substrate comprising a metal, and a first adjusting layer comprising a glass component formed on the substrate, wherein the surface of the substrate on which the first adjusting layer is formed is 10 μm × 10 using an Atomic Force Microscope (AFM). A flat display device having a surface roughness in the range of 0 <R _ms <10 nm and 0 <R _{p -v} <100 nm when viewed in a scan range of μm is provided.

Flat Panel Display, Surface Roughness, Flexible

Description

Flat display device and method for manufacturing thereof

FIG. 1A is an enlarged view of the surface of a substrate applied to a conventional flexible flat panel display device by observing with a light microscope.

1B is an enlarged view of the surface of a substrate applied to a conventional flexible flat panel display device by observing with an atomic force microscope (AFM).

2 is a cross-sectional view showing the structure of a substrate of a flat panel display device according to a first embodiment of the present invention, and an enlarged view and an associated graph of the surface of the substrate observed with an atomic force microscope (AFM).

FIG. 3 is a schematic diagram showing the device structure when the flat panel display device according to the first embodiment of the present invention is applied to an electroluminescent display. FIG.

4A and 4B are sectional views showing a state in which deformation occurs in the substrate according to the first embodiment of the present invention.

5 is a cross-sectional view showing a modified embodiment of the substrate according to the first embodiment of the present invention.

6 is a cross-sectional view showing the structure of a substrate of a flat panel display device according to a second embodiment of the present invention and an enlarged view of the surface of the substrate observed with an atomic force microscope (AFM).

7 is a cross-sectional view showing the structure of a substrate of a flat panel display device according to a third embodiment of the present invention.

8 is a cross-sectional view showing the structure of a substrate of a flat panel display device according to a fourth embodiment of the present invention.

* Description of the main parts of the drawings *

110, 210, 310, 410, 510: metal substrate

212, 312, 412, 512: first adjusting layer

314, 514: second adjustment layer

416, 516 third adjustment layer

The present invention relates to a flat panel display device and a manufacturing method thereof.

Recently, the importance of flat panel displays (FPDs) has increased with the development of multimedia. In response, various types of liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), light emitting display (light emitting display), etc. Flat panel displays have been put to practical use.

Among them, the liquid crystal display (LCD) has advantages of better visibility than the cathode ray tube, and an average power consumption and a small amount of heat generation. The electroluminescent display has a high response time with a response speed of 1 ms or less, low power consumption, and wide light viewing angle due to self-luminous.

Meanwhile, as the demand for a flexible flat panel display device increases greatly, there is a need for development of a flat panel display device that can be applied thereto. In addition, research on bending substrates is being conducted in various fields.

The material that can be applied to the curved substrate may be largely classified into a plastic film and a metal sheet on which a barrier film is formed.

In the case of plastic films, the technology for barrier films is not stabilized and is still in the research and development stage. On the other hand, in the case of a thin metal plate, it can be implemented as a curved substrate, but the surface roughness is not excellent, so the TFT characteristics of the thin film transistor formed thereon, or the lifespan and I-V characteristics of the electroluminescent device are greatly reduced.

FIG. 1A is a cross-sectional view illustrating a structure of a substrate applied to a conventional flexible flat panel display device and an enlarged view of the surface of the substrate observed by observing with a light microscope.

FIG. 1B is a cross-sectional view showing the structure of a substrate applied to a conventional flexible flat panel display device and an enlarged view of the surface of the substrate observed with an atomic force microscope (AFM).

In general, since the method of manufacturing a metal substrate with a thin thickness of bending is rolling, the surface roughness and shape of the substrate are changed depending on the surface state of the roll and the lower plate used during rolling. Referring to FIG. 1A, it can be seen that roll marks are formed in one direction on the surface of the metal substrate 110.

Referring to FIG. 1B, as a result of observing the surface of the metal substrate 110 in a scan range of 10 μm × 10 μm using AFM, the R _ms value, which is a roughness value of surface roughness, is 20 nm to 30 nm, and R _{p −v.} The value appeared to be about 200 nm-300 nm.

At this time, a scan range of 10 μm × 10 μm refers to a range that designates a part of the surface of the metal substrate 110 observed by AFM (Atomic Force Microscope).

Since the surface roughness of the conventional metal substrate 110 is large, the TFT characteristics are greatly reduced when the thin film transistor is formed, and the curved substrate 110 is formed when the electrode is formed on the metal substrate 110. Due to the surface of the electrode, the characteristics of the electrode are deteriorated or the luminance is locally generated, which causes a problem in that the production yield is lowered.

In order to solve the above problems, an object of the present invention is to provide a flat panel display device that can improve the production yield.

In order to achieve the above object, the present invention includes a substrate including a metal, and a first adjusting layer including a glass component formed on the substrate, wherein the surface of the substrate on which the first adjusting layer is formed is subjected to AFM (Atomic Force Microscope). The present invention provides a flat panel display device having a surface roughness in the range of 0 <R _ms <10 nm and 0 <R _{p -v} <100 nm when viewed in a scan range of 10 μm × 10 μm.

The thickness of the substrate may be formed in the range of 0.05mm to 1mm.

The substrate may include one or more metals selected from the group consisting of Ti, Ni, Invar, and Stainless Use Stainless (SUS).

The difference between the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first adjustment layer may be in the range of 0 to 5 ppm / ° C.

On the other hand, when the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first adjustment layer is different in the range of 0 to 2ppm / ℃ or less, the first adjustment layer may be formed in a thickness of 500nm to 150,000nm range.

In addition, when the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first adjustment layer is different in the range of 2 ppm / ° C. or more and 5 ppm / ° C. or less, the first adjustment layer may be formed to a thickness in the range of 500 nm to 30,000 nm.

The flat panel display device including the first control layer may further include a second control layer including an organic material on the substrate.

At this time, a second adjustment layer is formed on the first adjustment layer, an inorganic protective film is formed on the second adjustment layer, and the surface of the substrate on which the second adjustment layer is formed is 10 μm × using AFM (Atomic Force Microscope). When viewed in a scan range of 10 μm, surface roughness may range from 0 <R _ms <5 nm and 0 <R _{p −v} <50 nm.

The second adjustment layer may be formed to a thickness in the range of 100 nm to 30,000 nm.

In addition, the second adjustment layer is one selected from the group consisting of polyimide-based, benzocyclobutene (BCB) -based, photoacryl-based, polysilizane-based, and silicon-based materials It may contain the above organic matter.

The flat panel display device including the first control layer may further include a third control layer including an inorganic material on the substrate.

In this case, a third adjustment layer is formed on the first adjustment layer, and the surface roughness is observed when the surface of the substrate on which the third adjustment layer is formed is observed with a scanning range of 10 μm × 10 μm using AFM (Atomic Force Microscope). 0 <R _ms <5 nm, 0 <R _{p -v} <50 nm.

The third adjustment layer may be formed to a thickness in the range of 10 nm to 3,000 nm.

In addition, the third adjustment layer includes silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx), magnesium oxide (MgOx), aluminum nitride (AlN), hafnium oxide (HfOx), zirconium oxide (ZrOx), and tantalum. It may include one or more inorganic materials selected from the group consisting of oxides (TaOx).

In another aspect, the flat panel display device including the first control layer may further include a second control layer including an organic material and a third control layer including an inorganic material on the substrate.

In this case, the second adjustment layer and the third adjustment layer on the first adjustment layer, the third adjustment layer is formed on the top, the top surface of the substrate on which the third adjustment layer is formed AFM (Atomic Force Microscope) When viewed in a scan range of 10 μm × 10 μm, surface roughness may range from 0 <R _ms <5 nm and 0 <R _{p −v} <50 nm.

The flat panel display device may include a pixel unit including a light emitting layer interposed between two electrodes on a substrate.

The light emitting layer may include an organic material.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view showing the structure of a substrate of a flat panel display device according to a first embodiment of the present invention, and an enlarged view and an associated graph of the surface of the substrate observed with an atomic force microscope (AFM).

Referring to FIG. 2, a first adjustment layer 212 including a glass component is formed on the metal substrate 210 to improve surface roughness.

The metal substrate 210 may be formed to a thickness in the range of 0.05 mm to 1.0 mm through a rolling process to have a property that can be bent.

Meanwhile, the process of forming the first adjustment layer 212 will be described below.

A film comprising the glass component is formed in the form of a green sheet. In this case, the metal substrate 210 is heated to 100 ° C, and a film including the above-described green sheet-like glass component is laminated on the metal substrate 210 by a roll laminator heated to 100 ° C. Then, after raising the temperature up to 365 ℃ at a temperature increase rate of 5 ℃ / min using a box furnace, and maintained for 30 minutes, and after continuing to raise the temperature to 570 ℃ at a temperature increase rate of 5 ℃ / min and maintained again for 30 minutes To form the first adjustment layer 212.

Referring to the partially enlarged view and the graph attached to FIG. 2, the surface of the substrate 210 on which the first adjustment layer 212 is formed by using the AFM (Atomic Force Microscope) is subjected to the above process. You can see the results of your observations in the scan range.

Specifically, it can be seen that the protrusions of about 60 nm size are uniformly spread throughout the specimen. In addition, compared with the surface roughness of the conventional substrate 110 shown in FIGS. 1A and 1B, the R _a and R _{p -v} values are reduced to 1/3 or less so that the surface roughness is 0 <R _ms <10 nm, 0 It can be seen that the adjustment is within the range <R _{p −v} <100 nm.

Such a change in surface roughness may prevent degradation of TFT characteristics when, for example, thin film transistors are formed on the substrates 210 and 212, and the curved substrate 210 when the electrode and the light emitting layer are formed. It means that the yield condition can be prevented to prevent the deterioration of IV characteristics and the local luminance variation which may be caused by the surface of 212). Therefore, the metal substrate 210 having the first adjustment layer 212 according to the first embodiment of the present invention can improve the production yield of the flat panel display device.

Above, the first electrode, the light emitting layer, and the second electrode are formed on the substrates 210 and 212 according to the first embodiment of the present invention to complete a flat panel display device. The display can be implemented.

3 is a schematic diagram showing the device structure when the flat panel display device according to the first embodiment of the present invention is applied to an electroluminescent display device.

Referring to FIG. 3, a first electrode 222 is formed on the substrates 210 and 212. In this case, the first electrode 222 may be patterned into a transparent conductive film such as ITO and IZO having a high work function.

The emission layer 224 is formed on the first electrode 222. The light emitting layer 224 may be formed of an organic material, and may include any one or more than one of red, green, and blue light emitting layers.

The second electrode 226 is formed on the light emitting layer 224. The second electrode 226 may be formed to include any one or more of Al, Ag, and Mg having a low work function. In the case of the top emission type, the second electrode 226 may include a thin metal electrode or a thin metal. A transparent conductive film may be applied to form a transmissive electrode.

Although not shown in the drawings, a hole injection / transport layer may be interposed between the first electrode 222 and the light emitting layer 224 to facilitate the transport of holes. In addition, an electron injection / transfer layer may be interposed between the emission layer 224 and the second electrode 226.

In the above description of the structure of the flat panel display device according to the first exemplary embodiment, the first electrode 222 is formed as an anode and the second electrode 226 is formed as a cathode. The structure of the flat panel display device according to the first embodiment of the present invention is not limited thereto. Accordingly, the positions of the anode and the cathode on the substrates 210 and 212 may be changed, and one or more thin film transistors may be electrically connected to any one electrode according to a driving scheme.

4A and 4B are cross-sectional views illustrating a state in which deformation occurs in the substrate according to the first embodiment of the present invention. 5 is a cross-sectional view showing a modified embodiment of the substrate according to the first embodiment of the present invention.

Referring to the cross-sectional view of FIG. 2 and FIGS. 4A and 4B, the difference in thermal expansion coefficient between the metal substrate 210 and the first adjustment layer 212 in the substrates 210 and 212 according to the first embodiment of the present invention is described above. It should be adjusted within the range of 0 to 5 ppm / ° C.

If the difference between the thermal expansion coefficient T1 of the metal substrate 210 and the thermal expansion coefficient T2 of the first adjustment layer 212 exceeds 5 ppm / ° C., the substrate as shown in FIGS. 4A and 4B. This is because the problem of bending (210, 212) occurs.

Referring to FIG. 4A, when the thermal expansion coefficient T1 of the metal substrate 210 is greater than the thermal expansion coefficient T2 of the first adjustment layer 212 (T1> T2), the first adjustment layer 212 is compressed. Under stress, the substrates 210 and 212 are bent as shown.

Referring to FIG. 4B, when the thermal expansion coefficient T1 of the metal substrate 210 is smaller than the thermal expansion coefficient T2 of the first adjustment layer 212 (T1 <T2), the first adjustment layer 212 is tensile. Under stress, the substrates 210 and 212 are bent as shown.

As described above, the problem that the substrates 210 and 212 are bent due to the difference in the coefficient of thermal expansion between the metal substrate 210 and the first adjustment layer 212 is caused by the adhesion force between the metal substrate 210 and the first adjustment layer 212. It can also cause problems in terms of adhesion.

Therefore, in order to solve the above problems, the difference in thermal expansion coefficient is reduced by adjusting the thickness of the first adjustment layer 212, or as shown in FIG. 5, the first adjustment is performed on both sides of the metal substrate 210. There is a method of forming layer 212.

As described above, when the first adjustment layer 212 is formed, the thermal expansion coefficient T1 of the metal substrate 210 and the thermal expansion coefficient T2 of the first adjustment layer 212 are in a range of 0 to 2 ppm / ° C or less. When different from each other, the first adjustment layer may be formed to a thickness ranging from 500 nm to 150,000 nm.

In addition, when the thermal expansion coefficient T1 of the metal substrate 210 and the thermal expansion coefficient T2 of the first adjustment layer 212 are different from each other in the range of 2 ppm / ° C or more and 5 ppm / ° C or less, the first adjustment layer is 500 nm or more. It may be formed to a thickness in the range of 30,000 nm.

6 is a cross-sectional view illustrating a structure of a substrate of a flat panel display device according to a second exemplary embodiment of the present invention, and an enlarged view of the surface of the substrate by observing with an atomic force microscope (AFM).

Referring to FIG. 6, a second adjustment layer 314 including an organic material is further formed on the metal substrate 310 on which the first adjustment layer 312 including the glass component is formed to improve surface roughness.

The metal substrate 310 may be formed to a thickness in the range of 0.05 mm to 1.0 mm through a rolling process to have a property that can be bent.

The first adjustment layer 312 according to the second embodiment of the present invention is formed according to the same principle and method as the first adjustment layer 212 according to the first embodiment of the present invention.

In addition, the second adjustment layer 314 may be formed to have a thickness in the range of 100 nm to 30,000 nm in consideration of adhesion with the first adjustment layer 312.

The second adjusting layer 314 may be formed by one method selected from the group consisting of spin coating, dip coating, flow coating, roll coating, screen coating, and sol-gel method, but is not limited thereto.

In addition, the second adjustment layer 314 is a group consisting of a polyimide-based, benzocyclobutene (BCB) -based, photo acryl-based, polysilizane-based, and silicon-based materials. It may include one or more organic materials selected from.

Referring to the enlarged view of FIG. 6, as a result of observing the surface of the substrate 310 on which the second adjustment layer 314 is formed with a scanning range of 10 μm × 10 μm using AFM (Atomic Force Microscope), the second It can be seen that the surface roughness of the substrates 310, 312, 314 on which the adjustment layer 314 is formed is adjusted within the range of 0 <R _ms <5, 0 <R _{p -v} <50 nm.

Such a range of surface roughness of the substrates 310 and 312 can be prevented from deteriorating TFT characteristics when, for example, thin film transistors are formed on the substrates 310 and 312, and bent when the electrode and the light emitting layer are formed. In accordance with the yield conditions which can prevent the degradation of the IV characteristics and the local luminance variation that may be caused by the surfaces of the substrates 310 and 312. Therefore, the metal substrate 310 having the first adjustment layer 312 and the second adjustment layer 314 according to the second embodiment of the present invention can improve the production yield of the flat panel display device.

As described above, an inorganic passivation layer may be formed on the top of the substrates 310, 312, and 314 according to the second embodiment of the present invention to prevent contact between moisture or oxygen of the outside air and the second adjustment layer 314.

7 is a cross-sectional view illustrating a structure of a substrate of a flat panel display device according to a third exemplary embodiment of the present invention.

Referring to FIG. 7, a third adjustment layer 416 including an inorganic material is further formed on the metal substrate 410 on which the first adjustment layer 412 including the glass component is formed to improve surface roughness.

The metal substrate 410 may be formed to a thickness in the range of 0.05 mm to 1.0 mm through a rolling process to have a property that can be bent.

The first adjustment layer 412 according to the third embodiment of the present invention is formed according to the same principle and method as the first adjustment layer 212 according to the first embodiment of the present invention.

On the other hand, the third adjustment layer 416 may be applied to the oxide or nitride with good insulating properties in order to minimize the impact that can lower the IV characteristics of the device, for example, silicon oxide (SiOx), silicon nitride (SiNx ), Aluminum oxide (AlOx), magnesium oxide (MgOx), aluminum nitride (AlN), hafnium oxide (HfOx), zirconium oxide (ZrOx), may include one or more inorganic materials selected from the group consisting of tantalum oxide (TaOx). .

In addition, the third conductive layer 416 may be formed to have a thickness in the range of 10 nm to 3,000 nm to prevent cracking according to the bending property of the substrate 410. This has a sufficient surface roughness improvement effect when the third conductive layer 416 is formed to a thickness of 10 nm or more, and should be formed to a thickness of 3000 nm or less to prevent cracking due to stress acting when the substrate 410 is bent. Because it becomes.

The third adjustment layer 416 is formed by one inorganic film forming method selected from the group consisting of sputtering, evaporation, chemical vapor deposition, and plasma spray. It may be, but is not limited to such.

The third embodiment of the present invention has the same effect as that of the third adjustment layer 416 filling the voids on the surface of the metal substrate 410 on which the first adjustment layer 412 is formed on the same principle as the second embodiment of the present invention. Therefore, the surface roughness can be improved in the range of 0 <R _ms <5 and 0 <R _{p -v} <50 nm.

Such a range of surface roughness of the substrates 410 and 416 may prevent degradation of TFT characteristics when, for example, thin film transistors are formed on the substrates 410 and 416, and may be bent when the electrodes and the light emitting layer are formed. In accordance with the yield conditions which can prevent the degradation of the IV characteristics and the local luminance variation that may be caused by the surfaces of the substrates 410 and 416. Therefore, the substrates 410, 412, and 416 on which the third adjustment layer 416 is further formed according to the third embodiment of the present invention can improve the production yield of the flat panel display device.

8 is a cross-sectional view illustrating a structure of a substrate of a flat panel display device according to a fourth exemplary embodiment of the present invention.

Referring to FIG. 8, on the metal substrate 510 on which the first adjustment layer 512 including the glass component is formed, a second adjustment layer 514 including an organic material and an agent including an inorganic material for the purpose of improving surface roughness. 3 adjustment layer 516 is further formed.

The metal substrate 510 may be formed to a thickness in the range of 0.05 mm to 1.0 mm through a rolling process so as to have a bending property.

The first adjustment layer 512 according to the fourth embodiment of the present invention is formed according to the same principle and method as the first adjustment layer 212 according to the first embodiment of the present invention.

The second adjustment layer 514 may be formed to a thickness in the range of 100 nm to 30,000 nm in consideration of adhesion with the first adjustment layer 512. This results in a sufficient surface roughness improvement effect when the second adjustment layer 514 is formed to a thickness of 100 nm or more, and may be caused by stress acting when the substrate 510 is bent only when the second adjustment layer 514 is formed to a thickness of 30,000 nm or less. It is because the phenomenon which the interface between each adjustment layer which exists is lifted.

The second adjustment layer 514 is a polyimide-based, benzocyclobutene (BCB) -based, photo acryl-based, polysilizane-based, silicon (Si) -based material in the group It may include one or more selected organics.

In order to minimize the effect of lowering the IV characteristics of the device, the third adjustment layer 516 may be an oxide or nitride having good insulating properties. For example, silicon oxide (SiOx) or silicon nitride (SiNx) may be used. It may include at least one inorganic material selected from the group consisting of aluminum oxide (AlOx), magnesium oxide (MgOx), aluminum nitride (AlN), hafnium oxide (HfOx), zirconium oxide (ZrOx), tantalum oxide (TaOx).

As described above, the third adjustment layer 516 according to the fourth embodiment of the present invention is formed on the top of the substrate 410 to cover the second adjustment layer 514 including the organic material so that the moisture and oxygen of the outside air are second adjusted. To react with layer 514.

In addition, the third adjustment layer 516 may be formed to have a thickness in the range of 10 nm to 3,000 nm to prevent cracking according to the bending property of the substrate 510. This has a sufficient surface roughness improvement effect when the third conductive layer 516 is formed to a thickness of 10 nm or more, and should be formed to a thickness of 3000 nm or less to prevent cracking due to stress acting when the substrate 510 is bent. Because it becomes.

The substrates 510, 512, 514, and 516 according to the fourth embodiment of the present invention have the same surface roughness as 0 <R _ms <5, 0 in the same principle as the second and third embodiments of the present invention. It is improved to the range <R _pv <50 nm.

In the fourth embodiment of the present invention, the first adjustment layer 512, the second adjustment layer 514, and the third adjustment layer 516 have been described as examples, respectively. The structure of the substrate is not limited thereto, and each of the second and third adjustment layers may be present.

In addition, in the fourth embodiment of the present invention, when the first to third adjustment layers 512, 514, and 516 are sequentially formed on the substrate 510, the structure of the substrate has been described, but the substrate according to the present invention is described. The structure of is not limited to this. Accordingly, two or more second and third adjustment layers may be present on the first adjustment layer, respectively, the second adjustment layer and the third adjustment layer may be alternately stacked, and the second adjustment layer is positioned at the top. In this case, an inorganic protective film covering the second adjusting layer may be further formed.

As described above, a pixel unit including a light emitting layer interposed between two electrodes may be formed on a substrate according to various embodiments of the present disclosure, and various types of displays including OLEDs and LCDs may be applied according to light emitting methods.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, the above-described embodiments are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the appended claims rather than the foregoing description, and the meaning and scope of the claims and All changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

As described above, the present invention can provide a flat panel display device capable of improving the production yield.

Claims (18)

A substrate comprising a metal; And A first adjustment layer including a glass component formed on the substrate, wherein the surface of the substrate on which the first adjustment layer is formed can be observed in a scan range of 10 μm × 10 μm using AFM (Atomic Force Microscope). When the surface roughness is in the range of 0 <R _ms <10 nm and 0 <R _{p -v} <100 nm. The method of claim 1, The thickness of the substrate is a flat panel display device formed in the range of 0.05mm to 1mm. The method according to claim 1 or 2, The substrate is a flat panel display device comprising at least one metal selected from the group consisting of Ti, Ni, Invar, SUS (Steel Use Stainless). The method of claim 1, And a difference between the coefficient of thermal expansion of the substrate and the coefficient of thermal expansion of the first adjustment layer is in the range of 0 to 5 ppm / 占 폚. The method of claim 1, And the first adjustment layer has a thickness in the range of 500 nm to 150,000 nm when the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first adjustment layer are in a range of 0 to 2 ppm / ° C. or less. The method of claim 1, And the first adjustment layer has a thickness in the range of 500 nm to 30,000 nm when the thermal expansion coefficient of the substrate and the thermal expansion coefficient of the first adjustment layer are different from each other in the range of 2 ppm / ° C. or more and 5 ppm / ° C. or less. The method of claim 1, And a second adjusting layer including an organic material on the substrate. The method of claim 7, wherein The second adjustment layer is formed on the first adjustment layer, an inorganic protective film is formed on the second adjustment layer, and the surface of the substrate on which the second adjustment layer is formed is formed using an atomic force microscope (AFM). A flat panel display element having a surface roughness in the range of 0 <R _ms <5 nm and 0 <R _{p -v} <50 nm when viewed in a scan range of 10 μm × 10 μm. The method according to claim 7 or 8, The second adjustment layer is a flat panel display device having a thickness in the range of 100nm to 30,000nm. The method of claim 9, The second adjusting layer is at least one selected from the group consisting of polyimide-based, benzocyclobutene (BCB) -based, photo acryl-based, polysilizane-based, and silicon-based materials A flat panel display device comprising an organic material. The method of claim 1, And a third adjustment layer containing an inorganic material on the substrate. The method of claim 11, The third adjusting layer is formed on the first adjusting layer, and the surface of the substrate on which the third adjusting layer is formed is observed by using an AFM (Atomic Force Microscope) in a scan range of 10 μm × 10 μm. A flat panel display device having illuminance in the range of 0 <R _ms <5 nm and 0 <R _{p -v} <50 nm. The method of claim 11 or 12, The third adjustment layer is a flat panel display device having a thickness in the range of 10nm to 3,000nm. The method of claim 13, The third adjustment layer is silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx), magnesium oxide (MgOx), aluminum nitride (AlN), hafnium oxide (HfOx), zirconium oxide (ZrOx), tantalum oxide A flat panel display device comprising at least one inorganic material selected from the group consisting of (TaOx). The method of claim 1, And a third adjustment layer including an organic material and a third adjustment layer including an inorganic material on the substrate. The method of claim 15, The surface of the substrate including the second adjustment layer and the third adjustment layer on the first adjustment layer, wherein the third adjustment layer is formed on the top, and the third adjustment layer is formed on the top. A flat panel display device having a surface roughness of 0 <R _ms <5 nm and 0 <R _{p -v} <50 nm when viewed in a scan range of 10 μm × 10 μm using a force microscope. The method of claim 1, And a pixel unit including a light emitting layer interposed between two electrodes on the substrate. The method of claim 17, The light emitting layer is a flat panel display device comprising an organic material.

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