KR100840679B1 - Method for fabricating inplane switching mode liquid crystal display device - Google Patents

Abstract

The present invention relates to a method of manufacturing a liquid crystal display device of a transverse electric field type in which a driving method for simplifying a process and driving a liquid crystal is reduced by forming a protective film only on a top of a thin film transistor using a printing method, A method of manufacturing a transverse electric field type liquid crystal display device in which a plurality of pixel electrodes and common electrodes having a plurality of pixel electrodes and a plurality of common electrodes are alternately formed, comprising: preparing first and second substrates; Forming a common wiring on the first substrate, a common electrode, a common wiring parallel to the gate wiring and connected to the common electrode, and a gate electrode of the thin film transistor connected to the gate wiring on the same layer; Forming a gate insulating film on the first substrate on which the gate wiring, the common wiring, the common electrode, and the gate electrode are formed; Forming an active layer of the thin film transistor on the gate insulating film; A source electrode of the thin film transistor protruding from the data line on the active layer; a drain electrode formed at a predetermined distance from the source electrode; Forming the pixel electrode connected to the drain electrode; Forming a passivation layer on the upper portion of the thin film transistor using a printing method; Forming a liquid crystal layer between the first substrate and a corresponding second substrate, wherein the forming of the protective film comprises: providing a roller; Depositing an organic material on the roller; And transferring the organic material of the roller to an upper portion of the thin film transistor.

Transverse electric field, pixel electrode, common electrode, protective film, print

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a liquid crystal display device,

1 is an exploded perspective view showing a part of a general TN liquid crystal display device.

2 is a schematic cross-sectional view showing a general IPS liquid crystal display

FIGS. 3A and 3B are diagrams showing a phase transition of the liquid crystal when the voltage is turned on / off in the IPS mode

FIGS. 4A and 4B are perspective views showing the operation of the IPS mode liquid crystal display device in the off state and the on state, respectively.

5 is a plan view showing a conventional IPS liquid crystal display

6 is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along a line I-I in FIG. 5

7A to 7D are cross-sectional views showing a process for manufacturing a conventional IPS liquid crystal display device according to I-I line of Fig. 5

8A and 8D are cross-sectional views showing the steps of a method of manufacturing an IPS liquid crystal display device according to the present invention

FIGS. 9A and 9B are schematic views for explaining the gravure printing method and the offset gravure printing method used in the present invention

DESCRIPTION OF THE REFERENCE NUMERALS                 

51: lower substrate 52: gate electrode

53: common electrode 54: gate insulating film

55: active layer 56: source electrode

57: drain electrode 58: pixel electrode

59: protective film 60: nozzle

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display (LCD) device, and more particularly, to a method of manufacturing a liquid crystal display device of In-Plane Switching .

In recent years, there has been a demand for a display device in accordance with the development of an information society, and in recent years, a display device such as a liquid crystal display (LCD), a plasma display panel (PDP), an electro luminescent display (ELD), a vacuum fluorescent display ) Have been studied, and some of them have already been used as display devices in various devices.

Among them, the LCD is the most widely used in place of a CRT (Cathode Ray Tube) for the purpose of a portable image display device because of its excellent image quality, light weight, thinness and low power consumption. A television for receiving and displaying a broadcast signal, and a monitor for a computer.

Although various technological developments have been made in order for the liquid crystal display device to function as a screen display device in various fields, there are many aspects in which the operation of increasing the quality of the image as the screen display device is arranged with the above advantages.

Therefore, in order for a liquid crystal display device to be used in various parts as a general screen display device, the key to development is how much high-quality images such as high definition, high brightness and large area can be realized while maintaining the features of light weight, thinness and low power consumption It can be said that it is hanging.

The liquid crystal display device may be roughly divided into a liquid crystal panel for displaying an image and a driving part for applying a driving signal to the liquid crystal panel. The liquid crystal panel includes first and second glass substrates, And a liquid crystal layer injected between the first and second glass substrates.

Here, the first glass substrate (TFT array substrate) is provided with a plurality of gate wirings arranged at regular intervals and arranged in one direction, a plurality of data wirings arranged at regular intervals in a direction perpendicular to the respective gate wirings, A plurality of pixel electrodes formed in a matrix form in each pixel region defined by intersecting gate wirings and data wirings, and a plurality of thin films that are switched by signals of the gate wirings and transmit signals of the data wirings to the pixel electrodes A transistor is formed.

In addition, the second glass substrate (color filter substrate) is provided with a black matrix layer for shielding light in a portion excluding the pixel region, an R, G, and B color filter layers for expressing color hues, Respectively. Of course, in the transverse electric field type liquid crystal display device, the common electrode is formed on the first glass substrate.

The first and second glass substrates are bonded together by a spacer having a certain space and having a liquid crystal injection hole, and liquid crystal is injected between the two substrates.

At this time, in the liquid crystal injection method, the liquid crystal is injected between the two substrates by the osmotic pressure phenomenon when the liquid crystal injection port is locked in the liquid crystal container by keeping the vacuum state between the two substrates bonded together by the reality. When the liquid crystal is injected in this manner, the liquid crystal injection hole is sealed with the sealing material.

On the other hand, as described above, the driving principle of the liquid crystal display device utilizes the optical anisotropy and the polarization property of the liquid crystal.

Since the liquid crystal has a long structure, it has a direction in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Therefore, when the molecular alignment direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and the light polarized by the optical anisotropy is arbitrarily modulated to express image information.

These liquid crystals can be classified into a positive liquid crystal having a positive dielectric anisotropy (+) and a negative liquid crystal having a negative (-) according to a specific electrical classification. The liquid crystal molecules having a positive dielectric anisotropy have a long axis And the liquid crystal molecules in which the dielectric anisotropy is negative are aligned perpendicularly to the direction in which the electric field is applied and the long axis of the liquid crystal molecules.

1 is an exploded perspective view showing a part of a general TN liquid crystal display device.

A liquid crystal layer 3 injected between the lower substrate 1 and the upper substrate 2 comprises a lower substrate 1 and an upper substrate 2 bonded together with a certain space, .

More specifically, the lower substrate 1 has a plurality of gate wirings 4 arranged in one direction at regular intervals to define a pixel region P, and the gate wirings 4 are arranged in a direction perpendicular to the gate wirings 4 A plurality of data lines 5 are arranged at regular intervals and a pixel electrode 6 is formed in each pixel region P where the gate line 4 and the data line 5 cross each other, A thin film transistor T is formed at a portion where the data line 4 and the data line 5 cross each other.

The upper substrate 2 includes a black matrix layer 7 for blocking light in a portion excluding the pixel region P, an R, G, and B color filter layers 8 for expressing color hues, The common electrode 9 is formed.

Here, the thin film transistor T includes a gate electrode protruding from the gate wiring 4, a gate insulating film (not shown in the figure) formed on the entire surface, and an active layer formed on the gate insulating film above the gate electrode A source electrode protruding from the data line 5, and a drain electrode facing the source electrode.

The pixel electrode 6 uses a transparent conductive metal having a relatively high light transmittance such as indium-tin-oxide (ITO).

In the liquid crystal display device constructed as described above, the liquid crystal layer 3 disposed on the pixel electrode 6 is oriented by a signal applied from the thin film transistor T, and the degree of alignment of the liquid crystal layer 3 The amount of light transmitted through the liquid crystal layer 3 can be adjusted to express an image.

The liquid crystal panel as described above drives the liquid crystal by an electric field applied to the liquid crystal panel in an up-down direction. The liquid crystal panel has excellent characteristics such as transmittance and aperture ratio, and the common electrode 9 of the upper substrate 2 serves as a ground, It is possible to prevent breakage of the liquid crystal cell.

However, liquid crystal driving by an electric field that is applied in an up-down direction has a drawback that the viewing angle characteristic is not excellent.

Therefore, in order to overcome the above disadvantages, a new technique, that is, an IPS liquid crystal display device has been proposed.

2 is a schematic cross-sectional view showing a general IPS liquid crystal display device.

As shown in Fig. 2, the pixel electrode 12 and the common electrode 13 are formed on the same substrate on the lower substrate 11. In Fig.

The liquid crystal layer 14 formed between the upper substrate 15 and the lower substrate 11 with a certain space is disposed on the lower substrate 11 in the horizontal direction between the pixel electrode 12 and the common electrode 13. [ It is operated by an electric field.

FIGS. 3A and 3B are diagrams showing a state in which the liquid crystal is turned on when the voltage is on / off in the IPS mode.                         

That is, FIG. 3A shows that the liquid crystal layer 14 is not phase-shifted in the OFF state in which no transverse electric field is applied to the pixel electrode 12 or the common electrode 13. For example, by 45 DEG in the horizontal direction of the pixel electrode 12 and the common electrode 13. [

3B shows a state in which the liquid crystal layer 14 is phase-shifted in a state in which a horizontal electric field is applied to the pixel electrode 12 and the common electrode 13, It can be seen that the horizontal direction of the pixel electrode 12 and the common electrode 13 coincides with the twist direction of the liquid crystal.

As described above, the liquid crystal display device of the transverse electric field system has both the pixel electrode 12 and the common electrode 13 on the same plane.

An advantage of the transverse electric field system is that a wide viewing angle is possible. That is, when the liquid crystal display device is seen from the front, it can be seen from the direction of about 70 degrees in the up / down / left / right directions.

In addition, the liquid crystal display device is advantageous in that the manufacturing process is simpler than that of a commonly used liquid crystal display device, and the movement of color is less depending on the viewing angle.

However, since the common electrode 13 and the pixel electrode 12 are present on the same plane, there is a disadvantage in that the light transmittance and the aperture ratio are lowered.

In addition, since the response time due to the driving voltage must be improved and the misalignment margin of the cell gap is small, the cell gap must be uniform.

That is, since the IPS mode liquid crystal display device has the advantages and disadvantages as described above, it can be selectively used according to the use purpose of the user.

4A and 4B are perspective views illustrating the operation of the IPS mode liquid crystal display device when the liquid crystal display device is in an off state and an on state, respectively.

4A, when no transverse electric field is applied to the pixel electrode 12 or the common electrode 13, the liquid crystal molecule alignment direction 16 is aligned in the same direction as the alignment direction of the initial alignment film (not shown) .

As shown in FIG. 4B, when the transverse electric field is applied to the pixel electrode 12 and the common electrode 13, the alignment direction 16 of the liquid crystal molecules is arranged in the direction 17 in which the electric field is applied have.

Hereinafter, a conventional IPS liquid crystal display device will be described with reference to the accompanying drawings.

5 is a plan view of a conventional IPS liquid crystal display device.

5, a plurality of gate wirings 22 are arranged in one direction at regular intervals to define a pixel region P on a transparent lower substrate 31, A plurality of data wirings 21 are arranged at regular intervals in one direction.

A common wiring line 25 is arranged in the pixel region P in parallel with the gate wiring line 22. In each pixel region P defined by intersecting the gate line 22 and the data line 21, (T) is formed.

A plurality of pixel electrodes 39 are formed in the pixel region P so as to be parallel to the data lines 21 at regular intervals and connected to the drain electrodes 38 of the thin film transistor T at one end , And a plurality of common electrodes (41) protruding from the common wiring (25) are formed in the pixel region (P).

The thin film transistor T includes a gate electrode 40 formed to protrude from the gate wiring 22, a gate insulating film (not shown) formed on the entire surface of the gate electrode 40 and a gate electrode 40 formed on the gate insulating film A source electrode 37 protruding from the data line 21 and a drain electrode 38 formed at a predetermined distance from the source electrode 37. The active layer 33 is formed on the active layer 33,

FIG. 6 is a structural cross-sectional view of a conventional IPS liquid crystal display device taken along a line I-I in FIG.

6, a gate electrode 40 protruding from a gate wiring (22 in FIG. 5) is formed in a certain region on a transparent lower substrate 31 and a gate electrode 40 formed on a common electrode A gate insulating film 32 formed of a material such as SiNx or SiOx on the entire surface of the lower substrate 31 including the gate electrode 40 and a gate insulating film 32 corresponding to the gate electrode 40, An active layer 33 formed in an island shape on the active layer 33 and a source electrode 37 protruding from the data line 21 in FIG. 5 while overlapping a certain portion of the active layer 33, A drain electrode 38 and a pixel electrode 39 formed at a predetermined interval from the electrode 37 and a protective layer 34 formed of a material consisting of SiNx or SiOx on the entire surface of the lower substrate 31.

5), and the pixel electrode 39 is connected to the drain electrode 38 of the thin film transistor formed on the active layer 33. The common electrode 41 is connected to the common wiring .

An alignment layer (not shown) made of polyimide is formed on the protective layer 34.

On the upper substrate 24 corresponding to the lower substrate 31 formed as described above, a black matrix layer 26 for preventing light leakage and R, G, B color filter elements for implementing color are formed A color filter layer 27 and an overcoat layer 28 are sequentially stacked.

7A to 7D are cross-sectional views illustrating a method of manufacturing a conventional transverse electric field type liquid crystal display device according to I-I line of FIG.

As shown in FIG. 7A, a conductive metal is deposited on a transparent lower substrate 31, gate wiring (22 in FIG. 5) extending in one direction through a photo-etching process, (25 in FIG. 5) having a predetermined distance from the gate electrode 40 and the gate electrode 40 and having the same direction as the gate wiring 22, a common electrode 25 projecting from both sides of the common wiring 25, (41).

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W)

A gate insulating film 32 is formed on the entire surface of the lower substrate 31 including the gate electrode 40 and the common electrode 41 and an active layer 32 is formed on the gate insulating film 32, 33 are formed.

Wherein the gate insulating film 32 may be a silicon nitride film (SiNx) or silicon oxide (SiO _2), the active layer 33 although not shown in the figure, the amorphous silicon and contains a stack of an amorphous silicon impurities Structure.

Then, the active layer 33 is selectively removed through a photo-etching process to form an island-shaped active layer 33 on the gate insulating film 32 on the gate electrode 40.

A conductive metal is deposited on the entire surface of the lower substrate 31 including the active layer 33 and the source and drain electrodes 37 and 37 spaced apart at predetermined intervals through a photo- 38 and a pixel electrode 39, respectively.

The source electrode 37 and the drain electrode 38 are formed on the active layer 33. The pixel electrode 39 is formed on the gate insulating layer 32 in a plan view by the common electrode 41, Spaced apart.

Meanwhile, the drain electrode 38 and the pixel electrode 39 are electrically connected to each other.

As shown in FIG. 7D, a protective film 34 is formed on the entire surface of the lower substrate 31.

The protective layer 34 is formed for the purpose of protecting the active layer 33 from external moisture or foreign matter.

Next, an alignment layer (not shown) is formed on the entire surface of the lower substrate 31 including the protective layer 34.

Although not shown in the drawings, a black matrix layer for preventing leakage of light and a color filter layer of R, G, B for implementing color are formed on the upper substrate corresponding to the lower substrate 31 formed as described above, And an overcoat layer are stacked in this order, and a liquid crystal layer is formed between the lower substrate 31 and the upper substrate.

As described above, the IPS liquid crystal display device has a structure in which the common electrode 41 and the pixel electrode 39 are formed on the same substrate 31, and has a great advantage in improving the viewing angle.

However, the above conventional IPS liquid crystal display device and its manufacturing method have the following problems.

That is, in order to smoothly drive the liquid crystal molecules due to the additional capacitance due to the protective film formed between the pixel electrode and the common electrode and the additional capacitance due to the gate insulating film, a high voltage is applied to the liquid crystal layer in consideration of such additional capacitance, do.

Further, in order to solve the above problem, a protective film formed on a portion excluding the region where the thin film transistor is formed in the pixel region can be selectively removed, but the process is complicated and the manufacturing cost is increased due to the addition of the process.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems of the related art, and it is an object of the present invention to provide a method of manufacturing a liquid crystal display device in which a protective film is selectively formed only on a top of a thin film transistor And an object of the present invention is to provide a manufacturing method of an electric field type liquid crystal display device.

According to another aspect of the present invention, there is provided a method of manufacturing a transverse electric field type liquid crystal display device including a plurality of pixel electrodes having a predetermined interval in a pixel region and a common electrode in a staggered manner, The method comprising: preparing first and second substrates; Forming a common wiring on the first substrate, a common electrode, a common wiring parallel to the gate wiring and connected to the common electrode, and a gate electrode of the thin film transistor connected to the gate wiring on the same layer; Forming a gate insulating film on the first substrate on which the gate wiring, the common wiring, the common electrode, and the gate electrode are formed; Forming an active layer of the thin film transistor on the gate insulating film; A source electrode of the thin film transistor protruding from the data line on the active layer; a drain electrode formed at a predetermined distance from the source electrode; Forming the pixel electrode connected to the drain electrode; Forming a passivation layer on the upper portion of the thin film transistor using a printing method; Forming a liquid crystal layer between the first substrate and a corresponding second substrate, wherein the forming of the protective film comprises: providing a roller; Depositing an organic material on the roller; And transferring the organic material of the roller to an upper portion of the thin film transistor.

Here, the printing method uses either a gravure printing method, a gravure printing method, an inkjet printing method, an airbrush method, an electrostatic method, or a thermal transfer method.

Wherein the pixel electrode is formed on the same layer as the data line.
At least one of the common electrode and the pixel electrode is formed of a transparent metal such as indium tin oxide (ITO) or indium zinc oxide (IZO).

Here, the protective layer may be formed using any one of acrylic, polyimide, BCB, SOG, BPSG, and photopolymer.

delete

Hereinafter, a manufacturing method of a liquid crystal display device of a transverse electric field type according to the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, a protective film is formed only on the top of a thin film transistor using a printing technique such as screen printing and offset printing.

8A to 8D are cross-sectional views illustrating a method of manufacturing a transverse electric field type liquid crystal display device according to the present invention.

8A, a conductive metal is deposited on a transparent lower substrate 51, gate wirings (not shown) extending in one direction through a photo and etching process, gate electrodes 52 (not shown) projecting from the gate wirings And a common electrode having a predetermined distance from the gate electrode 52 and having the same direction as the gate wiring, and a common electrode 53 protruding from both sides of the common wiring are formed.

The conductive metal may be a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W)

A gate insulating film 54 is formed on the entire surface of the lower substrate 51 including the gate electrode 52 and the common electrode 53 and an active layer 54 is formed on the gate insulating film 54. [ 55 are formed.

Here, the gate insulating layer 54 may be a silicon nitride layer (SiNx) or a silicon oxide layer (SiO ₂ ). The active layer 55 may be formed of amorphous silicon and impurity-doped amorphous silicon Structure.

Then, the active layer 55 is selectively removed through a photo-etching process to form an island-shaped active layer 55 on the gate insulating film 54 above the gate electrode 52.

A conductive metal is deposited on the entire surface of the lower substrate 51 including the active layer 55 and the source and drain electrodes 56 and 57, Respectively.

The source electrode 56 and the drain electrode 57 are formed on the active layer 55. The pixel electrode 58 is formed on the gate insulating layer 54 in a plan view by the common electrode 53, Spaced apart.                     

Meanwhile, the drain electrode 57 and the pixel electrode 58 are integrally connected.

The lower substrate 51 is formed by using the nozzle 60 only on the upper portion of the thin film transistor composed of the gate electrode 52, the active layer 55, the source electrode 56 and the drain electrode 57, A protective film 59 is formed by an inkjet printing method in which an organic material is directly sprayed onto the substrate.
As described above, the protective film 59 is formed only on the upper portion of the thin film transistor in the printing method, thereby simplifying the process and reducing the manufacturing cost, reducing the additional capacitance between the pixel electrode 58 and the common electrode 53, The voltage can be lowered.

The protective layer 59 may be formed for protecting the active layer 55 from external moisture or foreign matter and may be formed of a material such as acrylic, polyimide, BCB (Benzo Cyclo Butene), SOG (Spin On Glass), BPSG Boron Phosphorus Silicate Glass, and photo polymer.

Next, an alignment layer (not shown) made of polyimide or a photo-alignment material is formed on the entire surface of the lower substrate 51 including the protective layer 59.

Here, the alignment direction of the alignment layer made of polyimide is determined by mechanical rubbing, and the photoreactive material composed of a polyvinylcinnamate based material or a polysiloxane based material is irradiated with light such as ultraviolet rays, Is determined. At this time, the alignment direction is determined by the irradiation direction of light or the property of light to be irradiated, that is, the polarization direction.

Although not shown in the drawing, the common electrode 53 and the pixel electrode 58 can be formed on the same layer as the gate wiring and the data wiring. The common electrode 53 is formed on the same layer as the data wiring, The pixel electrode 58 may be formed on the protective film 59.

At least one of the common electrode 53 and the pixel electrode 58 may be formed of ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), which is a transparent metal.

Although not shown in the drawing, a black matrix layer for preventing leakage of light and a color filter layer of R, G, B for implementing color are formed on the upper substrate corresponding to the lower substrate 51 formed as described above, And an overcoat layer are formed in this order, and a liquid crystal layer is formed between the lower substrate 51 and the upper substrate.

Meanwhile, the ink-jet printing method is a method of directly spraying an organic material onto the lower substrate 51 using the nozzle 60, using the principle that the organic material expanded by heating the organic material protrudes through the nozzle 60 .

In addition to the above inkjet printing method, any one of gravure printing method, gravure off-set printing method, air brush method, electrostatic method and thermal transfer method can be used .

9A and 9B are schematic views for explaining a gravure printing method and an op-set gravure printing method used in the present invention.

 9A, the gravure op-set printing method includes stacking an organic material 62 from an applicator roll 65 in a depressed portion 63 of a circular intaglio roller 61, do.

The organic material 62 may be laminated in the engraved portion 63 by typography, squeegee, roll coating orifice extrusion, or the like.

Subsequently, after the organic material 62 is laminated in the engraved portion 63, the organic material 62 is removed from the engraved portion 63 using a doctor blade 64, 66).

As shown in FIG. 9B, in the gravure printing method, an organic material 62 is buried in a circular roller 61 and scraped with a doctor to remove an unnecessary organic material 62. Then, The organic material 62 is transferred onto the substrate 66 by applying a suitable pressure using a squeeze made of a rubber material.

The air brush method is a modification of the ink-jet printing method in which an organic material is sprayed through a compressor. In the electrostatic method, a charge pattern is precisely applied to the surface of an insulating paper so that particles floating around the toner toner are reversely charged It is a method of transferring to the insulating paper passing through the printer, and the thermal transfer method is a method of directly transferring to paper, film, or other materials by using beeswax or resin ribbon.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Will be apparent to those of ordinary skill in the art.

 As described above, the manufacturing method of the liquid crystal display device of the transverse electric field system according to the present invention has the following effects.

First, by forming a protective film only on the upper portion of the thin film transistor, the additional capacitance between the pixel electrode and the common electrode can be reduced to lower the driving voltage of the liquid crystal layer.

Second, by forming a protective film only on the top of the thin film transistor by the printing method, the process can be simplified and the manufacturing cost can be reduced.

Claims (19)

1. A method of manufacturing a transverse electric field type liquid crystal display device in which a plurality of pixel electrodes and common electrodes having a predetermined interval in a pixel region are staggered, Preparing a first substrate and a second substrate; Forming a common wiring on the first substrate, a common electrode, a common wiring parallel to the gate wiring and connected to the common electrode, and a gate electrode of the thin film transistor connected to the gate wiring on the same layer; Forming a gate insulating film on the first substrate on which the gate wiring, the common wiring, the common electrode, and the gate electrode are formed; Forming an active layer of the thin film transistor on the gate insulating film; A source electrode of the thin film transistor protruding from the data line on the active layer; a drain electrode formed at a predetermined distance from the source electrode; Forming the pixel electrode connected to the drain electrode; Forming a passivation layer on the upper portion of the thin film transistor using a printing method; And forming a liquid crystal layer between the first substrate and a corresponding second substrate, The step of forming the protective film Providing a roller; Depositing an organic material on the roller; And transferring the organic material of the roller to an upper portion of the thin film transistor. delete The method of manufacturing a liquid crystal display device of a lateral electric field system according to claim 1, wherein the common electrode is formed by protruding from the common wiring. delete The method of claim 1, wherein at least one of the common electrode and the pixel electrode is formed of a transparent metal such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). delete delete The method of manufacturing a liquid crystal display device according to claim 1, wherein the pixel electrode is formed on the same layer as the data line on the gate insulating film. The method according to claim 1, wherein the protective film is formed using any one of acrylic, polyimide, BCB, SOG, BPSG and photopolymer. delete delete delete delete delete delete delete delete The method according to claim 1, The step of laminating the organic material on the roller And laminating the organic material in the concave portion of the roller. The method according to claim 1, The step of laminating the organic material on the roller A step of immersing the roller in the organic material; And removing unnecessary organic substances from the organic materials by scraping them with a doctor.

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