KR100839750B1 - Organic light emitting display - Google Patents

Abstract

An organic light emitting display device is provided to protect an organic light emitting pixel array or a circuit element from an electrostatic by forming a conducting layer of a transparent metal material on an encapsulation substrate or a substrate. An organic light emitting display device includes a substrate(100), a connector, an encapsulation substrate(210), a conducting layer(220), an encapsulation material(230), a conducting adhesive material(240), and a ground connection distribution line. An organic light emitting pixel array having an organic light emitting diode is formed on the substrate. An electrical signal having a ground line is formed on the connector. The connector is electrically coupled to the organic light emitting pixel array. The encapsulation material is formed on a circumference of the substrate as an outer circumference plane of the organic light emitting pixel array. The encapsulation substrate is attached to the encapsulation material and is coupled to the substrate to seal the organic light emitting pixel array. The conducting layer is formed on a plane of the encapsulation substrate which is opposite to the substrate. The conducting layer is electrically coupled to a ground line of the connector. The conducting adhesive is formed between the encapsulation material and the organic light emitting pixel array. The ground connection distribution line is electrically coupled to the connector located on an external side of the encapsulation material, and the conducting adhesive located on an internal side.

Description

Organic electroluminescent display device {ORGANIC LIGHT EMITTING DISPLAY}

1 is a plan view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating an organic light emitting display device taken along the line II ′ of FIG. 1.

3 is an enlarged cross-sectional view illustrating in detail an internal configuration of the organic light emitting display device of FIG. 2.

4 is a plan view illustrating a pattern of a conductive film when the conductive film of the organic light emitting display device is an opaque metal according to an embodiment of the present invention.

FIG. 5 is a plan view illustrating another pattern of a conductive film when the conductive film of the organic light emitting display device is an opaque metal according to an embodiment of the present invention.

6 is a plan view illustrating another pattern of a conductive film when the conductive film of the organic light emitting display device is an opaque metal according to an embodiment of the present invention.

7 is a schematic cross-sectional view illustrating an organic light emitting display device according to another exemplary embodiment of the present invention.

8 is a cross-sectional view illustrating in detail an internal configuration of an organic light emitting display device according to another exemplary embodiment of the present invention.

<Brief description of symbols for the main parts of the drawings>

100, 700: substrate 110, 710: organic light emitting pixel array

210, 810: sealing substrate 220, 420, 520, 820: conductive film

230, 830: Encapsulant 240: Conductive Adhesive

250: connection wiring 250b, 850b: ground connection wiring

260: pad portion 260b, 260b ', 850b: ground pad portion

270 connector GL: ground line of the connector

300, 300 ', 900: organic electroluminescent display

The present invention relates to an organic light emitting display device, and more particularly, to an organic light emitting display device that can protect an internal element of a panel from static electricity flowing into the panel from the outside.

An organic light emitting display (OLED) emits light by recombination of electrons supplied from a cathode and holes supplied from an anode. It is a type of flat panel display that uses Diode (OLED). Such an organic light emitting display device has advantages such as a thin thickness, a wide viewing angle, and a fast response speed. Organic electroluminescent display devices having such advantages are spotlighted as next generation displays that can be used in most electronic applications such as mobile communication terminals, navigation, personal display assistants (PDAs), camcorders, and the like.

The organic light emitting diode display is classified into a passive matrix type and an active matrix type according to a driving method. The passive driving method is a method of selecting and driving a line after forming an anode and a cathode on a substrate to be orthogonal to each other. On the other hand, in the active driving method, light is emitted from the organic light emitting diode OLED by supplying a driving current corresponding to the data signal to the organic light emitting diode using a thin film transistor (TFT) formed for each pixel. As a method of realizing an image, it is possible to exhibit stable luminance and less power consumption than a passive driving method, which is advantageous in the application of a high resolution and a large display.

In general, an organic light emitting diode of an organic light emitting display device has a stacked structure of an anode, an organic film, and a cathode.

However, since the conventional organic light emitting display device has a total thickness of about 1 to 2 mm, the internal element, for example, the organic light emitting diode OLED, may be easily destroyed when an external strong electric shock is applied.

In particular, when an electrostatic discharge (ESD), which has a voltage of several thousand to tens of thousands of volts, is introduced into an organic light emitting display device, the organic light emitting diode and other elements are damaged and displayed by light emission of the organic light emitting diode. A soft fail phenomenon may occur in which an image is temporarily flickered, or a hard fail phenomenon may occur in which the image is not displayed at all due to permanent damage to a circuit or a pixel. Therefore, there is a problem that the reliability of the organic organic light emitting display device is lowered.

Accordingly, an object of the present invention is to provide an organic light emitting display device which can protect an internal element of a panel from static electricity flowing into the panel from the outside.

In order to achieve the above technical problem, the organic light emitting display device according to the present invention comprises a substrate formed with an organic light emitting diode array comprising an organic light emitting diode; A connector in which an electrical signal line is formed to electrically connect the organic light emitting pixel array; An encapsulant formed around the substrate which is an outer circumference of the organic light emitting pixel array; An encapsulation substrate bonded to the encapsulant and bonded to the substrate to seal the organic light emitting array; And a conductive film formed on one surface of the encapsulation substrate facing the substrate and electrically connected to an electrical signal line of the connector.

The electrical signal line of the connector electrically connected to the conductive layer may be a ground line.

In addition, the organic light emitting display device according to the present invention comprises: a conductive adhesive formed between the encapsulant and the organic light emitting pixel array in the substrate to bond the conductive film; And a ground connection wiring electrically connected to the connector located outside and the adhesive located inside, based on the encapsulant.

The conductive adhesive may be selected from any one of an anisotropic conductive film, silver paste, indium, and indium alloy.

In addition, the organic light emitting display device according to the present invention may include a ground connection wiring electrically connected to the connector and the outer surface of the conductive layer positioned outside the encapsulant.

The connector may be a flexible printed circuit or a chip on flexible (COF).

The conductive layer may be formed of a transparent metal and may be coated on an entire surface of the encapsulation substrate.

The transparent metal may be selected from any one of indium-tin-oxide (ITO), indium-inc-oxide (IZO), and indium-tin-zinc-oxide (ITZO).

The organic light emitting diode array includes a buffer layer formed on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film, an interlayer insulating film formed on the gate electrode, and the interlayer. A source / drain electrode formed in the insulating film, an insulating film formed in the source / drain electrode, the organic light emitting diode formed in the insulating film, and a pixel defining layer formed at an outer circumference of the organic light emitting diode in the insulating film. have.

The conductive layer may be formed of an opaque metal, and may be formed in a pattern corresponding to the pixel defining layer.

The pattern of the conductive layer may be a horizontal stripe.

The conductive layer pattern may be a vertical stripe.

The conductive layer pattern may be a lattice pattern.

The opaque metal may be selected from any one of chromium (Cr), aluminum (Al), and an aluminum alloy.

The light emitting layer of the organic light emitting diode may be formed of a fluorescent material.

The light emitting layer of the organic light emitting diode may be formed of a phosphor.

In addition, the organic light emitting diode display according to the present invention may include a polycrystalline thin film transistor for driving the organic light emitting diode.

The polycrystalline transistor may be formed by a laser crystallization method.

The polycrystalline transistor may be formed by a metal catalyst crystallization method.

The polycrystalline transistor may be formed by a high pressure crystallization method.

The organic light emitting diode may be a top emission type.

The encapsulation substrate may be formed of a transparent material.

The substrate may be formed with an area larger than the area of the encapsulation substrate.

In order to achieve the above technical problem, another organic electroluminescent display device of the present invention comprises a substrate formed with an organic light emitting diode array comprising an organic light emitting diode; An electrical signal line is formed and electrically connected to the organic light emitting array; An encapsulant formed around the substrate which is an outer circumference of the organic light emitting pixel array; An encapsulation substrate bonded to the encapsulant and bonded to the substrate to seal the organic light emitting array; And a conductive film formed in an outer region of the encapsulant among the substrates and electrically connected to an electrical signal line of the connector.

In addition, the organic light emitting display device may include a ground connection line electrically connected to the connector and the conductive layer that are located outside based on the encapsulant.

The organic light emitting diode may be a bottom emission type.

The substrate may be formed of a transparent material.

Other technical problems and advantages of the present invention in addition to the above technical problem will become apparent from the description of the preferred embodiment of the present invention with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 1 to 8.

1 is a plan view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention, FIG. 2 is a cross-sectional view illustrating an organic light emitting display device taken along line II ′ of FIG. 1, and FIG. 3. FIG. 2 is an enlarged cross-sectional view illustrating in detail an internal configuration of the organic light emitting display device of FIG. 2. Herein, the internal configuration of the organic light emitting display device is illustrated with an exaggerated size to help the understanding of the present invention.

1 and 2, an organic light emitting display device 300 according to an exemplary embodiment includes a substrate 100 on which an organic light emitting diode array 110 is formed; An electrical signal line (ESL) is formed to be electrically connected to the organic light emitting diode array (110) (270); An encapsulant 230 formed around the substrate 100, which is an outer circumference of the organic light emitting diode array 110; An encapsulation substrate 210 bonded to the encapsulant 230 and coupled to the substrate 100 to seal the organic light emitting array 110; And a conductive film 220 formed on one surface of the encapsulation substrate 210 facing the substrate 100 and electrically connected to an electrical signal line ESL of the connector 270.

FIG. 2 is a top-emitting organic light emitting display device and shows only one unit pixel. In this case, the organic light emitting display device may include a plurality of unit pixels in which a plurality of unit pixels are arranged.

Referring to FIG. 2, the substrate 100 may have a top surface and a bottom surface that are approximately flat, and a thickness between the top surface and the bottom surface may be approximately 0.05 to 1 mm. When the thickness of the substrate 100 is about 0.05 mm or less, the substrate 100 may be easily damaged by cleaning, etching, and heat treatment processes, and may be weak in external force. In addition, when the thickness of the substrate 100 is about 1 mm or more, it is difficult to apply to various display devices having a recent slimming trend. Since the organic light emitting display device 300 according to the exemplary embodiment of the present invention is a top emission type, the substrate 100 may be formed of any one selected from glass, plastic, polymer, and equivalents thereof. It does not limit this invention.

The substrate 100 includes an organic light emitting pixel array 110, a connection wiring 250 connecting the organic light emitting pixel array 110 and an external circuit module, for example, a printed circuit board (PCB), and a pad unit 260. ) May be located. Accordingly, the area of the substrate 100 where these components are located is larger than the area of the encapsulation substrate 210.

The organic light emitting diode array 110 formed on the substrate 100 is composed of unit pixels including an organic light emitting diode, a thin film transistor, and a capacitor.

Specifically, as shown in FIG. 3, the organic light emitting diode array 110 may include a buffer layer 120 formed on the substrate 100, a semiconductor layer 130 formed on the buffer layer 120, and a semiconductor layer 130. ), A gate insulating layer 140 formed on the gate insulating layer 140, a gate electrode 150 formed on the gate insulating layer 140, an interlayer insulating layer 160 formed on the gate electrode 150, and a source formed on the interlayer insulating layer 160. The insulating film 180 formed on the / drain electrode 170, the insulating film 180 formed on the source / drain electrode 170, the organic light emitting diode 190 formed on the insulating film 180, and the organic light emitting diode 190. The pixel defining layer 200 formed on the 180 may be formed.

The buffer layer 120 may be formed on the upper surface of the substrate 100. The buffer layer 120 penetrates through the substrate 100 through moisture (H ₂ O), hydrogen (H ₂ ), or oxygen (O ₂ ) toward the semiconductor layer 130 or the organic light emitting diode 190 to be described later. It does not play a role. To this end, the buffer layer 120 may be formed of at least one selected from an oxide film (SiO ₂ ), a nitride film (Si ₃ N ₄ ), and the like, which can be easily formed during a semiconductor process, but the present invention is limited to these materials. It is not. Of course, the buffer layer 120 may be omitted as necessary.

The semiconductor layer 130 may be formed on an upper surface of the buffer layer 120. The semiconductor layer 130 may include a source / drain region 132 formed on opposite sides of the semiconductor layer 130 and a channel region 134 formed between the source / drain region 132. For example, the semiconductor layer 130 may be a thin film transistor. The thin film transistor may be formed of at least one selected from an amorphous silicon thin film transistor, a poly silicon thin film transistor, an organic thin film transistor, a micro silicon thin film transistor, or an equivalent thereof. The type of thin film transistor is not limited. The thin film transistor may be at least one selected from a PMOS, an NMOS, and an equivalent form thereof, but the present invention is not limited to the conductive form of the thin film transistor.

Crystallization methods of such thin film transistors include Excimer Laser Annealing (ELA) and Metal Catalyst Crystallization (MIC: Metal Induced Crystallization) and Metal Phase Crystallization using Promoting Materials. (SPC: Solid Phase Crystallization). In addition, there are high pressure annealing (HPA) for crystallization in a high temperature, high humidity atmosphere, and a method of using a mask in addition to a conventional laser crystallization method (SLS: Sequential Lateral Solidification).

In addition, there is a micro silicon having a grain size between amorphous silicon (a-si) and polycrystalline silicon (Poly Silicon).

The microsilicon typically refers to grain size ranging from 1 nm to 100 nm. The electron mobility of the microsilicon is 1 to 50 or less and the hole mobility is 0.01 to 0.2 or less. The microsilicon is characterized in that the size of the crystal grains are smaller than that of the polycrystalline silicon, and the protrusion region between the grains is formed smaller than the polysilicon, so that the microsilicon does not interfere when electrons move between the grains, thereby showing uniform characteristics. The microsilicon grains can be classified into a thermal crystallization method and a laser crystallization method. The thermal crystallization method includes a reheating method of depositing amorphous silicon and simultaneously obtaining a crystallized structure.

The laser crystallization method is the most widely used method of crystallizing a thin film transistor with polysilicon (Poly Silicon). Not only can the crystallization method of the existing polycrystal liquid crystal display device be used as it is, but the process method is simple and the technology development of the process method is completed.

The metal catalyst crystallization method is one of methods that can be crystallized at low temperature without using the laser crystallization method. Initially, the metal catalyst metal, Ni, Co, Pd, Ti, or the like, is deposited or spin-coated on an amorphous silicon (a-Si) surface to directly penetrate the amorphous silicon surface to change the phase of the amorphous silicon. There is an advantage that can be crystallized at a low temperature by the method of crystallization.

Another method of the metal catalyst crystallization method has an advantage of suppressing the inclusion of contaminants such as nickel silicide in a specific region of the thin film transistor using a mask when interposing a metal layer on the surface of the amorphous silicon. The crystallization method is called a metal catalyst induced side crystallization method (MILC: Metal Induced Lateral Crystallization). A shadow mask may be used as a mask used in the metal catalyst-induced side crystallization method, and the shadow mask may be a linear mask or a pointed mask.

Another method of the metal catalyst crystallization method is a metal catalyst induction capping layer that controls the amount of metal catalyst introduced into the amorphous silicon through a capping layer first when depositing or spin coating the metal catalyst layer on the surface of the amorphous silicon. There is a crystallization method (MICC: Metal Induced Crystallization with Capping Layer). A silicon nitride layer may be used as the capping layer. The amount of the metal catalyst flowing into the amorphous silicon from the metal catalyst layer varies according to the thickness of the silicon nitride film. In this case, the metal catalyst flowing into the silicon nitride layer may be formed on the entire silicon nitride layer, or may be selectively formed using a shadow mask. The capping layer may be selectively removed after the metal catalyst layer has crystallized the amorphous silicon into polycrystalline silicon. The capping layer may be removed by using a wet etching method or a dry etching method. In addition, after the polycrystalline silicon is formed, a gate insulating film is formed and a gate electrode is formed on the gate insulating film. An interlayer may be formed on the gate electrode. After forming a via hole on the interlayer insulating layer, impurities may be introduced into the crystallized polysilicon through the via hole to further remove metal catalyst impurities formed therein. A method of additionally removing the metal catalyst impurities is called a gettering process. The gettering process includes a heating process of heating the thin film transistor at a low temperature in addition to the process of injecting the impurities. Through the gettering process, a high quality thin film transistor can be realized.

The gate insulating layer 140 may be formed on an upper surface of the semiconductor layer 130. Of course, the gate insulating layer 140 may also be formed on the buffer layer 120 that is the outer circumference of the semiconductor layer 130. In addition, the gate insulating layer 140 may be formed of at least one selected from an oxide film, a nitride film, or an equivalent thereof which can be easily obtained during a semiconductor process, and the material is not limited thereto.

The gate electrode 150 may be formed on an upper surface of the gate insulating layer 140. More specifically, the gate electrode 150 may be formed on the gate insulating layer 140 corresponding to the channel region 134 of the semiconductor layer 130. As is well known, the gate electrode 150 applies an electric field to the channel region 134 under the gate insulating layer 140 so that a channel of holes or electrons is formed in the channel region 134. In addition, the gate electrode 150 may be formed of at least one selected from a common metal (MoW, Ti, Cu, AlNd, Al, Cr, Mo alloy, Cu alloy, Al alloy, etc.), doped polysilicon, and equivalents thereof. However, the material is not limited thereto.

The interlayer insulating layer 160 may be formed on an upper surface of the gate electrode 150. Of course, the interlayer insulating layer 160 may be formed on the gate insulating layer 140, which is the outer circumference of the gate electrode 150. In addition, the interlayer insulating layer 160 may be formed of any one selected from a polymer series, a plastic series, a glass series, or an equivalent series, but the material of the interlayer insulating layer 160 is not limited thereto.

The source / drain electrode 170 may be formed on an upper surface of the interlayer insulating layer 160. Of course, an electrically conductive contact 176 may be formed between the source / drain electrode 170 and the semiconductor layer 130 to penetrate the interlayer insulating layer 160. That is, the semiconductor layer 130 and the source / drain electrode 170 are electrically connected by the conductive contact 176. In addition, the source / drain electrode 170 may be formed of the same metal material as the gate electrode 150, but the material is not limited thereto. Meanwhile, the semiconductor layer 130 as described above (ie, a thin film transistor) is generally defined as a coplanar structure. However, the semiconductor layer 130 disclosed in the present invention is not limited to the coplanar structure, but the structure of all the thin film transistors known so far, for example, an inverted coplanar structure and a staggered structure. At least one selected from an inverted staggered structure and an equivalent structure is possible, and the present invention is not limited to the structure of the semiconductor layer 130.

The insulating layer 180 may be formed on an upper surface of the source / drain electrode 170. The insulating layer 180 may further include a passivation layer 182 and a planarization layer 184 formed on an upper surface of the passivation layer 182. The passivation layer 182 covers the source / drain electrode 170 and the interlayer insulating layer 160, and protects the source / drain electrode 170, the gate electrode 150, and the like. The passivation layer 182 may be formed of any one selected from an ordinary inorganic layer and equivalents thereof, but the material of the passivation layer 182 is not limited in the present invention. In addition, the planarization layer 184 covers the passivation layer 182. The planarization layer 184 flattens the entire surface of the device and may be formed of at least one selected from BCB (Benzo Cyclo Butene), acrylic, and equivalents thereof, but the material is not limited thereto.

The organic light emitting diode 190 may be formed on an upper surface of the insulating layer 180. The organic light emitting diode 190 may further include an anode 192, an organic thin film 194 formed on an upper surface of the anode 192, and a cathode 196 formed on an upper surface of the organic thin film 194. The anode 192 may be indium tin oxide (ITO), indium tin oxide (ITO) / Ag, indium tin oxide (ITO) / Ag / ITO, indium tin oxide (ITO) / ag / IZO (indium zinc oxide) or the like It may be formed of any one of the equivalents, but the material of the anode 192 is not limited in the present invention. The ITO is a transparent conductive film having a uniform work function and a small hole injection barrier in the organic thin film 194. The Ag is a film which reflects light from the organic thin film 194 to the top surface in the top emission method. On the other hand, the organic thin film 194 is formed of an emission layer (EML) emitting electrons by forming an exciton where electrons and holes meet, an electron transport layer (ETL), and holes for appropriately controlling the moving speed of electrons. It may be made of a hole transport layer (HTL) to properly control the moving speed of. In addition, an electron injection layer (EIL) is formed in the electron transport layer to improve electron injection efficiency, and a hole injection layer (HIL) is improved in the hole transport layer to improve hole injection efficiency. Can be formed. In addition, the cathode 196 may be at least one selected from Al, MgAg alloy, MgCa alloy, and equivalents thereof, but the material of the cathode 196 is not limited thereto. However, when the top emission method is used in the present invention, Al has to be made very thin. In this case, the resistance is increased, and thus the electron injection barrier is increased. The MgAg alloy has a lower electron injection barrier than Al, and the MgCa alloy has a lower electron injection barrier than the MgAg alloy. However, these MgAg alloys and MgCa alloys are sensitive to the surrounding environment and can be oxidized to form an insulating layer. In addition, the conductive via 198 formed through the insulating layer 180 (the passivation layer 182 and the planarization layer 184) of the anode 192 and the source / drain electrode 170 of the organic light emitting diode 190 is formed. (electrically conductive via) can be electrically connected to each other. Meanwhile, the organic light emitting display device 300 according to an exemplary embodiment of the present invention has been described with reference to a top emission method that emits light toward an upper direction of the substrate 100, but is not limited thereto. Both the bottom emission method for emitting light or the double-sided emission for emitting light simultaneously in the upper and lower directions of the substrate 100 can be applied.

In the present invention, the light emitting layer of the organic light emitting diode 190 may be formed of a fluorescent material, but in the case of an organic light emitting diode in which the light emitting layer is formed of a phosphor, a hole blocking layer (HBL) may be formed of the light emitting layer (EML). An electron blocking layer EBL may be selectively formed between the electron transport layer ETL, and an electron blocking layer EBL may be selectively formed between the emission layer EML and the hole transport layer HTL. Here, the fluorescent material used as the material of the light emitting layer is composed of a host (host) and a guest (guest). The host of the fluorescent material is an aluminokinin complex (Alq ₃ ), a beryllium quinoline complex (BeBq ₂ ), Almq (4-methyl-8-hydroxyquinoline), BAlq, hydroxyphenyloxazole (ZnPBO), hydroxyphenyldiazole ( ZnPBT), azomethine metal complexes, and distyrylbenzene derivatives. The guest of the fluorescent material may be any one selected from coumarin derivatives, DCM, kinacridone, and ruble. In addition, the phosphor used as a material of the light emitting layer may be any one selected from Byp ₂ Ir (acac), Ir (ppy) ₃ , and FIrpic.

In addition, the organic thin film 194 may be formed of a slim organic light emitting diode (Slim OLED) to further reduce the thickness by mixing the two types of layers. For example, a hole injection transport layer (HITL) structure for simultaneously forming a hole injection layer and a hole transport layer and an electron injection transport layer (EITL) structure for simultaneously forming an electron injection layer and an electron transport layer are provided. May be optionally formed. The slim organic light emitting diode as described above has an object of use for increasing luminous efficiency.

In addition, a buffer layer may be formed between the anode and the light emitting layer as a selection layer. The buffer layer may be divided into an electron buffer layer buffering electrons and a hole buffer layer buffering holes. The electron buffer layer may be selectively formed between the cathode and the electron injection layer EIL, and may be formed in place of the function of the electron injection layer EIL. In this case, the stacked structure of the organic thin film 194 may be an emission layer (EML) / electron transport layer (ETL) / electron buffer layer / cathode. In addition, the hole buffer layer may be selectively formed between the anode and the hole injection layer HIL, and may be formed in place of the function of the hole injection layer HIL. In this case, the stacked structure of the organic thin film 194 may be an anode / hole buffer layer / hole transport layer (HTL) / light emitting layer (EML).

The possible laminated structure with respect to the above structure is described as follows.

a) Normal Stack Structure

 1) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode

 2) anode / hole buffer layer / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode

 3) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / electron buffer layer / cathode

 4) anode / hole buffer layer / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / electron buffer layer / cathode

 5) Anode / hole injection layer / hole buffer layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode

 6) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron buffer layer / electron injection layer / cathode

b) Normal Slim Structure

 1) anode / hole injection transport layer / light emitting layer / electron transport layer / electron injection layer / cathode

 2) anode / hole buffer layer / hole injection transport layer / light emitting layer / electron transport layer / electron injection layer / cathode

 3) anode / hole injection layer / hole transport layer / light emitting layer / electron injection transport layer / electron buffer layer / cathode

 4) Anode / hole buffer layer / hole transport layer / light emitting layer / electron injection transport layer / electron buffer layer / cathode

 5) anode / hole injection transport layer / hole buffer layer / light emitting layer / electron transport layer / electron injection layer / cathode

 6) anode / hole injection layer / hole transport layer / light emitting layer / electron buffer layer / electron injection transport layer / cathode

c) Inverted Stack Structure

 1) cathode / electron injection layer / electron transport layer / light emitting layer / hole transport layer / hole injection layer / anode

 2) cathode / electron injection layer / electron transport layer / light emitting layer / hole transport layer / hole injection layer / hole buffer layer / anode

 3) cathode / electron buffer layer / electron injection layer / electron transport layer / light emitting layer / hole transport layer / hole injection layer / anode

 4) cathode / electron buffer layer / electron injection layer / electron transport layer / light emitting layer / hole transport layer / hole buffer layer / anode

 5) cathode / electron injection layer / electron transport layer / light emitting layer / hole transport layer / hole buffer layer / hole injection layer / anode

 6) cathode / electron injection layer / electron buffer layer / electron transport layer / light emitting layer / hole transport layer / hole injection layer / anode

d) Inverted Slim Structure

 1) cathode / electron injection layer / electron transport layer / light emitting layer / hole injection transport layer / anode

 2) cathode / electron injection layer / electron transport layer / light emitting layer / hole injection transport layer / hole buffer layer / anode

 3) cathode / electron buffer layer / electron injection transport layer / light emitting layer / hole transport layer / hole injection layer / anode

 4) cathode / electron buffer layer / electron injection transport layer / light emitting layer / hole transport layer / hole buffer layer / anode

 5) cathode / electron injection layer / electron transport layer / light emitting layer / hole buffer layer / hole injection transport layer / anode

 6) cathode / electron injection transport layer / electron buffer layer / light emitting layer / hole transport layer / hole injection layer / anode

The pixel defining layer 200 may be formed on an upper surface of the insulating layer 180 as an outer circumference of the organic light emitting diode 190. The pixel defining layer 200 clarifies the boundary between the red organic light emitting diode, the green organic light emitting diode, and the blue organic light emitting diode so that the emission boundary area between the pixels becomes clear. In addition, the pixel defining layer 200 may be formed of at least one selected from polyimide and its equivalents, but the material of the pixel defining layer 200 is not limited thereto.

The organic light emitting diode array 110 formed as described above is connected to the connection wiring 250, and the connection wiring 250 is electrically connected to the connector 270 through the pad part 260. Accordingly, the organic light emitting diode array 110 is electrically connected to an external circuit module, for example, a printed circuit board (PCB), and receives an electrical signal from the external circuit module.

In detail, the organic light emitting diode array 110 includes the scan connection line 250a and the data connection line of the connection line 250 including the scan connection line 250a, the ground connection line 250b, and the data connection line 250c. 250c of the pad portions 260c, each of which includes a scan pad portion 260a, a ground pad portion 260b, and a data pad portion 260c, respectively, through the scan pad portion 260a and the data pad portion 260c. An external circuit electrically connected to the connector 270 by being connected to each of the scan line SL and the data line DL among the connectors 270 on which the scan line SL, the data line DL, and the ground line GL are formed. The signal is supplied from the module. Here, the connector 270 may be a flexible printed circuit (FPC) or a chip on flexible (COF).

As such, the organic light emitting diode array 110 electrically connected to the external circuit module through the connector 270 is sealed by bonding the encapsulation substrate 210 to the substrate 100 using the encapsulant 230.

The encapsulant 230 is formed around the substrate 100, which is an outer circumference of the organic light emitting pixel array 110. The encapsulant 230 may be at least one selected from an adhesive epoxy adhesive, an ultraviolet curing adhesive agent, a frit, and an equivalent thereof so that the encapsulation substrate 210 may be adhered to the substrate 100. It does not limit the material here. When the frit is used as the encapsulant 230, the frit needs to be heated to a predetermined temperature, and thus the encapsulation operation may be performed using a laser beam. That is, after placing the frit between the substrate 100 and the encapsulation substrate 210 and irradiating a laser beam to the frit from one side, the frit is melted and the substrate 100 and the encapsulation substrate 210. ) Is strongly bonded.

The encapsulation substrate 210 is bonded to the encapsulant 230 so as to seal the organic light emitting array 110 and is coupled to the substrate 100. The encapsulation substrate 210 may be formed of any one selected from a general transparent glass, a transparent plastic, a transparent polymer, and an equivalent thereof, but is not limited thereto. Here, light generated from the organic light emitting diode 190 is emitted through the encapsulation substrate 210.

The conductive film 220 is formed on one surface of the encapsulation substrate 210 facing the substrate 100. The conductive layer 220 is grounded through a ground line GL of the connector 270 to generate an electrostatic discharge generated outside the organic light emitting display device 300 and introduced through the encapsulation substrate 210. It plays a role.

To this end, a conductive adhesive 240 is formed between the encapsulant 230 and the organic light emitting array 110 of the substrate 100, the conductive adhesive 240 is a conductive film 210 and the substrate ( It is adhered to the ground connection wiring (250b) located on the 100, electrically connecting the conductive film 220 to the ground line (GL) of the connector 270 through the ground connection wiring 250b and the ground pad portion 260b. It plays a role.

Accordingly, the conductive film 220 may include a conductive adhesive 240, a ground connection wiring 250b, and a ground pad part 260b that electrically connects the ground connection wiring 250b and the ground line GL of the connector 270. ) Is electrically connected to the ground line GL of the connector 270.

Therefore, when the electrostatic discharge is introduced into the organic light emitting display device 300 from the outside through the encapsulation substrate 210, the conductive film 220 conducts the electrostatic introduced through the encapsulation substrate 210. The panel includes the substrate 100 and the encapsulation substrate 210 by allowing the adhesive 240, the ground connection wiring 250b, and the ground pad part 260b to be discharged to the ground line GL of the connector 270. It may affect the organic light emitting pixel array 110 and other circuit elements therein to prevent damage.

As described above, the conductive layer 220 protects the organic light emitting diode array 110 formed inside the organic light emitting display device 300 from static electricity having a voltage of several thousand to tens of thousands of volts, thereby causing the organic light emitting diode array to be corrected. Damage to the 110 and other circuit elements can be prevented. In particular, the conductive layer 220 protects the organic light emitting diode 190, which may be easily damaged by static electricity, from the organic light emitting diode array 110 so that the image of the panel flickers due to damage of the organic light emitting diode 190. It is possible to prevent the occurrence of a soft fail or a hard fail in which an image does not appear on the panel at all.

The conductive film 220 as described above is formed of a transparent metal having conductivity so as to conduct static electricity to the ground line GL of the connector 270. For example, the transparent metal may be selected from any one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-zinc-oxide (ITZO), but is not limited thereto. . The reason why the metal of the conductive film 220 is a transparent material is that the organic light emitting display device 300 according to the exemplary embodiment of the present invention encapsulates the light through the conductive film 220 in a top emission manner. This is because it is emitted toward the substrate 210. Such a conductive film 220 may be formed by coating the entire surface of the encapsulation substrate 210 by a sputtering deposition method.

4 is a plan view illustrating a pattern of a conductive film when the conductive film of the organic light emitting display device is an opaque metal, and FIG. 5 is a conductive diagram of the organic light emitting display device according to an embodiment of the present invention. FIG. 6 is a plan view illustrating another pattern of the conductive film when the film is an opaque metal. FIG. 6 is a plan view illustrating another pattern of the conductive film when the conductive film of the organic light emitting display device according to the exemplary embodiment of the present invention is an opaque metal.

4 to 6, unlike the transparent metal conductive film 220 formed on one surface of the encapsulation substrate 210, the conductive films 420, 520, and 620 are opaque metals on one surface of the encapsulation substrate 210. It can be formed in a regular pattern. That is, since the conductive layers 420, 520, and 620 are formed of an opaque metal, the pixel definition illustrated in FIG. 3 does not overlap the organic light emitting diode 190 so that light emitted from the organic light emitting diode 190 may be emitted. It is formed in a pattern corresponding to the film 200.

For example, as illustrated in FIG. 4, the pattern of the conductive layer 420 may be a horizontal stripe corresponding to the pixel defining layer 200. As illustrated in FIG. 5, the pattern of the conductive layer 520 may be a vertical stripe corresponding to the pixel defining layer 200. As shown in FIG. 6, the pattern of the conductive layer 620 may be a lattice pattern corresponding to the pixel defining layer 200.

As such, the conductive films 420, 520, and 620 of the opaque metal material illustrated in FIGS. 4 to 6 may separate the organic light emitting diode array 190 and other circuit elements from static electricity flowing into the organic light emitting display device 300 from the outside. In addition to the protection, since it is formed in a pattern corresponding to the pixel defining layer 200 that distinguishes between pixels and neighboring pixels, it serves as a black matrix that increases the sharpness and color purity by blocking light between pixels. Can be. In particular, the conductive film 620 having the lattice pattern shown in Figure 6 has the highest advantage in terms of efficiency of the black mattress role. Here, the opaque metal may be selected from any one of chromium (Cr) and aluminum alloy, but is not limited thereto.

The conductive adhesive 240 electrically connected to the conductive film 220 may be selected from any one of an anisotropic conductive film, a silver paste, an indium, and an indium alloy. It is not limited to such a material.

As described above, the organic light emitting display device 300 according to the exemplary embodiment of the present invention forms the conductive layers 220, 420, 520, and 620 on one surface of the organic light emitting display device 300 facing the substrate 100 to form the organic light emitting diode array 110 from the outside. The organic light emitting pixel is grounded by grounding the static electricity flowing into the ground line GL of the connector 270 through the conductive films 220, 420, 520, 620, the conductive adhesive 240, the ground connection wiring 250b, and the ground pad part 260b. The array 110 and other circuit elements may be protected from static electricity. Therefore, by preventing the damage of the organic light emitting diode array 110 and other circuit elements generated by static electricity, the soft fail (flash) image of the panel flickers due to damage to the organic light emitting diode array 110 and other circuit elements ) Or a hard fail that does not appear at all on the panel.

7 is a schematic cross-sectional view illustrating an organic light emitting display device according to another exemplary embodiment of the present invention.

The organic electroluminescent display 300 ′ according to another exemplary embodiment of the present invention is compared with the organic electroluminescent display 300 according to the exemplary embodiment of the present invention, and the ground of the conductive layer 220 and the connector 270 is grounded. Only the structure of the ground connection wiring 250b 'connecting the lines GL is different, and the same components and the same operation are performed. Accordingly, the same reference numerals will be given to the same components except for the ground connection wiring 250b ', and redundant descriptions of the same components will be omitted, and the conductive film 220 and the connector 270 are grounded. Only the electrical connection structure of the ground connection wiring 250b 'electrically connected between the lines GL will be described.

The conductive film 220 of the organic light emitting display device 300 ′ according to another exemplary embodiment of the present invention is formed on one surface of the encapsulation substrate 210 facing the substrate 100. The conductive layer 220 is configured to ground an electrostatic discharge generated outside the organic light emitting display device 300 and introduced through the encapsulation substrate 210 through the ground line GL of the connector 270. Play a role.

To this end, the ground connection wiring 250b 'is electrically connected between the outer surface of the conductive film 220 exposed to the outside and the ground line GL of the connector 270 located outside based on the encapsulant 230. Is connected. Accordingly, the conductive film 220 is electrically connected to the ground line GL of the connector 270 through the ground connection wiring 250b 'and the ground pad part 260b.

Therefore, when the electrostatic discharge flows into the organic light emitting display device 300 from the outside through the encapsulation substrate 210 from the outside, the conductive layer 220 connects the static electricity to the ground connection wiring 250b 'and the ground pad. By dropping the ground line GL of the connector 270 through the unit 260b, static electricity may be prevented from being damaged by affecting the organic light emitting diode array 110 and other circuit elements inside the panel.

As described above, the organic electroluminescent display 300 ′ according to another embodiment of the present invention is configured to conduct static electricity flowing from the outside in the organic electroluminescent display 300 according to the exemplary embodiment of the present invention. ), Unlike the case where the ground is connected to the ground line GL of the connector through the conductive adhesive 240, the ground connection wiring 250b, and the ground pad part 260b, the conductive adhesive 240 is removed and the conductive film 220 is removed. ) And one resistance component can be removed by directly connecting the ground connection wiring 250b '. Therefore, the organic electroluminescent display 300 ′ according to another embodiment of the present invention is faster than the organic electroluminescent display 300 according to the exemplary embodiment of the present invention, and the ground line GL of the connector is faster. More efficient grounding.

8 is a cross-sectional view illustrating in detail an internal configuration of an organic light emitting display device according to another exemplary embodiment of the present invention. Herein, the organic light emitting display device is a bottom emission type organic light emitting display device, and is limited to one unit pixel. In addition, the organic light emitting display device may include a plurality of unit pixels in which a plurality of unit pixels are arranged.

The organic light emitting display device 900 according to another embodiment of the present invention has a structure of the organic light emitting diode 790 due to the bottom emission type when compared to the organic light emitting display device 300 according to an embodiment of the present invention. In addition, only the connection structure between the conductive layer 820 and the ground line GL of the connector may have the same components and the same operation. Accordingly, duplicate descriptions of the same components and the same operation will be omitted, and the structure of the organic light emitting diode 790 and the connection structure between the conductive layer 820 and the ground line GL of the connector will be emphasized. This will be described.

An organic light emitting diode 790 of the organic light emitting diode display 900 according to another exemplary embodiment may be formed on the top surface of the insulating layer 780. The organic light emitting diode 790 may further include an anode 792, an organic thin film 794 formed on the top surface of the anode 792, and a cathode 796 formed on the top surface of the organic thin film 794. The anode 792 may be formed of any one selected from indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide (ITZO), or an equivalent thereof. The material of the anode 792 is not limited. The ITO may be a transparent conductive film having a uniform work function and a small hole injection barrier in the organic thin film 794. On the other hand, the organic thin film 794 has an electron emitting layer (EMML) emitting electrons and holes to form an exciton (exciton) to emit light, an electron transport layer (ETL), holes to properly control the movement speed of the electrons It may be made of a hole transport layer (HTL) to properly control the moving speed of. In addition, an electron injection layer (EIL) is formed in the electron transport layer to improve electron injection efficiency, and a hole injection layer (HIL) is improved in the hole transport layer to improve hole injection efficiency. Can be formed. In addition, since the organic light emitting display device according to another embodiment of the present invention is a bottom emission type, the cathode 796 may be at least one selected from Al, MgAg alloy, MgCa alloy, and equivalents thereof as the reflective electrode. In the present invention, the material of the cathode 796 is not limited.

The organic light emitting diode 790 configured as described above is positioned on the substrate 700 and emits light back through the substrate 700 by an electric field. Here, since light is emitted through the substrate 700, the substrate 700 should be a transparent substrate.

The conductive film 820 of the organic light emitting display device 900 according to another embodiment of the present invention is an outer region of the encapsulant 830 of the substrate 700, in detail, the substrate 700 that is exposed to the outside. The lower surface is formed continuously on the side surface and a portion of the upper surface, and is electrically connected to an electrical signal line formed in the connector, that is, the ground line GL. Here, a part of the upper surface of the substrate 700 has a ground connection line 850b for electrically connecting the ground line GL and the conductive layer 820 of the connector, which is located outside, based on the encapsulant 830. Area.

Accordingly, the conductive film 820 is connected to the ground connection line 850b, the ground connection line 850b, and the ground line GL of the connector through the ground pad part 860b electrically connecting the ground line GL of the connector. Is electrically connected).

Accordingly, the conductive layer 820 may be connected to the ground connection wiring 850b and the ground pad unit when the electrostatic discharge is introduced into the organic light emitting display device 900 from the outside through the substrate 700. By bleeding to the ground line GL of the connector through 860b, it is possible to prevent static electricity from affecting the organic light emitting diode array 710 and other circuit elements inside the panel and causing damage.

As such, the conductive layer 820 protects the organic light emitting diode array 710 formed inside the organic light emitting display device 900 from static electricity having a voltage of several thousand to tens of thousands of volts, thereby causing the organic light emitting diode array to be corrected. Damage to 710 can be prevented. The conductive layer 820 protects the organic light emitting diode 790 which is easily damaged by static electricity in the organic light emitting diode array 710 from static electricity, so that the image of the panel flickers due to damage of the organic light emitting diode 790. It is possible to prevent the occurrence of a fail or a hard fail in which an image does not appear at all on the panel.

The conductive layer 820 as described above is a transparent metal material capable of conducting static electricity to the ground line GL of the connector, similar to the conductive layer 220 of the organic light emitting display device 300 according to an exemplary embodiment. The lower surface of the substrate 700 may be formed on the entire surface of the furnace substrate 700, and a certain pattern corresponding to the pixel defining layer 800 is formed on the lower surface of the substrate 700, such as the conductive films 420, 520, and 620, that is, vertical stripes and horizontal shapes. Formed with stripes and lattice stripes, it can conduct static electricity to the connector's ground line (GL) while also acting as a black matrix.

As described above, the organic light emitting display device according to the present invention forms an electrically conductive film of transparent metal on the encapsulation substrate or the entire substrate, so that the organic light emitting diode array or other circuit element inside the panel is discharged from static electricity flowing from the outside into the panel. Can protect. This prevents damage to the organic light emitting diode array or other devices due to static electricity, thereby preventing the occurrence of a soft fail in which the image of the panel flickers or a hard fail in which the image does not appear at all on the panel. can do. Therefore, the reliability of the organic light emitting display device can be improved.

In addition, the organic light emitting display device according to the present invention forms an electrically conductive film of opaque metal on the encapsulation substrate or the substrate in a pattern corresponding to the pixel definition layer, thereby protecting the organic light emitting diode array or other circuit elements inside the panel from static electricity. In addition, by blocking the light between the pixels it is possible to increase the sharpness and color purity of the image displayed on the panel. Therefore, the image quality of the organic light emitting display device can be improved.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

Claims (44)

delete delete A substrate on which an organic light emitting diode array including an organic light emitting diode is formed; An electrical signal line including a ground line is formed to be electrically connected to the organic light emitting diode array; An encapsulant formed around the substrate which is an outer circumference of the organic light emitting pixel array; An encapsulation substrate bonded to the encapsulant and bonded to the substrate to seal the organic light emitting array; A conductive film formed on one surface of the encapsulation substrate facing the substrate and electrically connected to a ground line of the connector; A conductive adhesive formed between the encapsulant and the organic light emitting array in the substrate to which the conductive film is adhered; And And a ground connection wiring electrically connected to the connector positioned outside the encapsulant and the conductive adhesive disposed therein. The method according to claim 3, And the conductive adhesive is selected from any one of an anisotropic conductive film, silver paste, indium, and an indium alloy. A substrate on which an organic light emitting diode array including an organic light emitting diode is formed; An electrical signal line including a ground line is formed to be electrically connected to the organic light emitting diode array; An encapsulant formed around the substrate which is an outer circumference of the organic light emitting pixel array; An encapsulation substrate bonded to the encapsulant and bonded to the substrate to seal the organic light emitting array; A conductive film formed on one surface of the encapsulation substrate facing the substrate and electrically connected to a ground line of the connector; And And a ground connection wiring electrically connected to the connector and the outer surface of the conductive layer that are located outside the encapsulant. The method according to claim 3 or 5, And the connector is a flexible printed circuit or a chip on flexible (COF). The method according to claim 3 or 5, The conductive layer is formed of a transparent metal and is coated on an entire surface of the encapsulation substrate. The method according to claim 7, And the transparent metal is selected from one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-zinc-oxide (ITZO). The method according to claim 3 or 5, The organic light emitting pixel array A buffer layer formed on the substrate, A semiconductor layer formed on the buffer layer, A gate insulating film formed on the semiconductor layer, A gate electrode formed on the gate insulating film, An interlayer insulating film formed on the gate electrode, A source / drain electrode formed on the interlayer insulating film, An insulating film formed on the source / drain electrode, The organic light emitting diode formed on the insulating layer, And an pixel defining layer formed on an outer circumference of the organic light emitting diode in the insulating layer. The method of claim 9, And the conductive layer is formed of an opaque metal and formed in a pattern corresponding to the pixel defining layer. The method of claim 10, The pattern of the conductive layer is a horizontal stripes, an organic light emitting display device. The method of claim 10, And the conductive layer pattern is a vertical stripe. The method of claim 10, And the conductive layer pattern is a lattice pattern. The method of claim 10, The opaque metal is selected from any one of chromium (Cr), aluminum (Al), and an aluminum alloy. The method according to claim 3 or 5, The light emitting layer of the organic light emitting diode is formed of a fluorescent material. The method according to claim 3 or 5, The light emitting layer of the organic light emitting diode is formed of a phosphor material. The method according to claim 3 or 5, And a polycrystalline thin film transistor for driving the organic light emitting diode. The method according to claim 17, And the polycrystalline transistor is formed by a laser crystallization method. The method according to claim 17, And the polycrystalline transistor is formed by a metal catalyst crystallization method. The method according to claim 17, And the polycrystalline transistor is formed by a high voltage crystallization method. The method according to claim 3 or 5, And the organic light emitting diode is a top emission type. The method according to claim 3 or 5, The encapsulation substrate is formed of a transparent material. The method according to claim 3 or 5, And the substrate is formed with an area larger than that of the encapsulation substrate. A substrate on which an organic light emitting diode array including an organic light emitting diode is formed; An electrical signal line is formed and electrically connected to the organic light emitting array; An encapsulant formed around the substrate which is an outer circumference of the organic light emitting pixel array; An encapsulation substrate bonded to the encapsulant and bonded to the substrate to seal the organic light emitting array; And And a conductive layer formed on an outer region of the encapsulant among the substrates and electrically connected to an electrical signal line of the connector. The method of claim 24, And an electrical signal line of the connector electrically connected to the conductive layer is a ground line. The method of claim 25, And a ground connection wiring electrically connected to the connector and the conductive layer positioned outside the encapsulant. The method of claim 25, And the connector is a flexible printed circuit or a chip on flexible (COF). The method of claim 25, The conductive layer is formed of a transparent metal and is coated on the entire surface of the substrate. The method of claim 28, And the transparent metal is selected from one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and indium-tin-zinc-oxide (ITZO). The method of claim 25, The organic light emitting pixel array A buffer layer formed on the substrate, A semiconductor layer formed on the buffer layer, A gate insulating film formed on the semiconductor layer, A gate electrode formed on the gate insulating film, An interlayer insulating film formed on the gate electrode, A source / drain electrode formed on the interlayer insulating film, An insulating film formed on the source / drain electrode, The organic light emitting diode formed on the insulating layer, And an pixel defining layer formed on an outer circumference of the organic light emitting diode in the insulating layer. The method of claim 30, And the conductive layer is formed of an opaque metal and formed in a pattern corresponding to the pixel defining layer. The method of claim 31, wherein The pattern of the conductive layer is a horizontal stripes, an organic light emitting display device. The method of claim 31, wherein And the conductive layer pattern is a vertical stripe. The method of claim 31, wherein And the conductive layer pattern is a lattice pattern. The method of claim 31, wherein The opaque metal is selected from any one of chromium (Cr), aluminum (Al), and an aluminum alloy. The method of claim 24, The light emitting layer of the organic light emitting diode is formed of a fluorescent material. The method of claim 24, The light emitting layer of the organic light emitting diode is formed of a phosphor material. The method of claim 24, And a polycrystalline thin film transistor for driving the organic light emitting diode. The method of claim 38, And the polycrystalline transistor is formed by a laser crystallization method. The method of claim 38, And the polycrystalline transistor is formed by a metal catalyst crystallization method. The method of claim 38, And the polycrystalline transistor is formed by a high voltage crystallization method. The method of claim 24, And the organic light emitting diode is a bottom emission type. The method of claim 24, And the substrate is formed of a transparent material. The method of claim 24, And the substrate is formed with an area larger than that of the encapsulation substrate.

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