KR100771540B1 - Method for forming capacitor - Google Patents

Abstract

A method of forming a capacitor is provided to improve a leakage current property effectively by depositing a dielectric layer with a zirconium oxide layer and subjecting them to ozone heat treatment. A mold layer(430) having an opening hole(431) is formed on a semiconductor substrate(100), and then a storage node(500) having a metal layer is formed along a profile of the opening hole. A first zirconium oxide layer is formed on the storage node through ALD(Atomic Layer Deposition), and then an aluminum oxide layer is deposited on the first zirconium oxide layer through ALD. A second zirconium oxide layer is deposited on the aluminum oxide layer to form a dielectric layer(600). The dielectric layer is subjected to heat treatment, and then a plate node is formed on the dielectric layer.

Description

Method for forming capacitor

1 to 8 are cross-sectional views schematically illustrating a method of forming a capacitor according to an embodiment of the present invention.

9 to 12 are graphs of capacitance and leakage current measurements presented to explain the effect of a capacitor forming method according to an exemplary embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly, to a method of forming a capacitor capable of securing capacitance.

As the degree of integration of semiconductor devices increases, the design rules of semiconductor devices are rapidly reduced to 80 nm or less. Accordingly, many efforts have been made to form a capacitor capable of realizing sufficient capacitance in a limited area in a DRAM memory device including a transistor and a capacitor, which constitute a unit memory cell.

For example, a capacitor having a metal layer-dielectric layer-metal layer (MIM) structure for replacing a polysilicon layer with a metal layer has been proposed, wherein a high-k dielectric material having a higher dielectric constant as the dielectric layer, such as hafnium oxide (HfO ₂ ) Or a dielectric material such as aluminum oxide (Al ₂ O ₃ ), zirconium oxide (ZrO ₂ ), or the like has been proposed.

When such a capacitor includes a dielectric layer of a high dielectric constant material, electrical characteristics, such as leakage current characteristics of the capacitor, may be implemented differently according to temperature conditions at which the dielectric layer is formed. For example, in the case of zirconium oxide, the crystallization degree or crystal state of the film quality may vary according to the deposition temperature, and the capacitance or leakage current characteristics of the capacitor may vary according to the crystallization degree and state. In addition, the leakage current characteristics or capacitance may vary depending on the temperature at which the aluminum oxide layer or the hafnium oxide layer is also formed.

Nevertheless, in forming capacitors, as well as improving capacitance characteristics and / or leakage currents, impurities such as unwanted pyrolysis temperature of the source material used for dielectric layer deposition or carbon due to pyrolysis occurrence Increase should be taken into account. In such a case, it may be difficult to perform deposition of the dielectric layer under temperature conditions favorable to crystallization or the like.

In addition, when depositing dielectric layers having different components from each other to form a dielectric layer of a capacitor as a composite layer, a case in which the deposition temperatures of the respective dielectric layers are different from each other may be considered to be deposited in independent processes. In this case, temperature conditions suitable for each dielectric layer may be differently applied to the respective deposition processes, thereby improving capacitance or leakage current.

Nevertheless, since these deposition processes must be continuously performed in different process chambers, a process of moving wafers between the chambers may be required, which may cause a problem in that mass productivity is relatively reduced.

Accordingly, there is a need for development of a capacitor formation method capable of realizing an increase in mass productivity when forming a capacitor, ensuring sufficient capacitance, and preventing leakage current.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a capacitor formation method capable of improving leakage current characteristics, realizing an effect of increasing capacitance, and improving mass productivity.

One aspect of the present invention for achieving the above technical problem, the step of forming a mold (mold) having an opening (opening hole) on the semiconductor substrate, comprising a metal layer along the profile (profile) of the opening hole Forming a storage node, depositing a dielectric layer comprising a zirconium oxide (ZrO ₂ ) layer on the storage electrode, using an ozone (O ₃ ) atmosphere in the dielectric layer, and A method of forming a capacitor comprising heat treatment at a high temperature, and forming a plate node on the dielectric layer.

Forming a lower insulating layer under the mold layer, and forming a storage electrode contact including a doped polysilicon layer penetrating the lower insulating layer to be aligned with the opening hole, and the storage electrode and the contact. The method may further include a silicide step of performing a heat treatment to generate a metal silicide at an interface with it.

The method may further include depositing a titanium (Ti) layer in contact with the storage electrode contact to induce the metal silicide to titanium silicide before the silicide step.

The storage electrode may be formed by chemical vapor deposition or atomic layer deposition of titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), platinum or ruthenium.

The storage electrode may further include the step of separating the electrode by etch back or chemical mechanical polishing (CMP) after the depositing step.

The dielectric layer comprises atomic layer deposition (ALD) of a first zirconium oxide layer, atomic layer deposition of an aluminum oxide layer in-situ on the first zirconium oxide layer, and the aluminum oxide And atomic layer depositing a second zirconium oxide layer on the layer, wherein the deposition process can be performed at a temperature lower than the thermal decomposition temperature of the zirconium source for the zirconium oxide layer.

The first or second zirconium oxide (ZrO ₂ ) layer is Zr [N (CH ₃ )] ₄ , Zr [N (CH ₂ CH ₃ )] ₄ , Zr [N (CH ₃ ) (CH ₂ CH ₃ ) ₄ , or a zirconium source comprising Zr [N (CH ₃ ) ₂ (CH ₂ CH ₃ ) ₂ ] ₄ , and an oxygen source comprising ozone gas or water vapor, and deposited by the atomic layer deposition, and the aluminum An oxide layer can be deposited by the atomic layer deposition using an aluminum source comprising Al (CH ₃ ) ₃ and an oxygen source comprising ozone gas or water vapor.

The first or second zirconium oxide layer may be deposited to a thickness of about 20 to 80 kW and the aluminum oxide layer may be deposited to be about 2 to 15 kW.

The atomic layer deposition may be performed in a temperature range of approximately 250 ℃ to 320 ℃.

The ozone heat treatment may be performed at a temperature range of approximately 400 to 500 ° C.

The ozone heat treatment may be performed in the ozone atmosphere at a concentration of approximately 100 to 500 g / Nm ³ and a process chamber pressure of approximately 0.1 to 760 Torr in the temperature range.

The plate electrode may include a titanium nitride layer and a doped polysilicon layer.

Another aspect of the present invention for achieving the above technical problem, forming a mold layer having an opening (opening hole) on a semiconductor substrate, comprising a metal layer along the profile (profile) of the opening hole Forming a storage node, depositing a dielectric layer including a zirconium oxide (ZrO ₂ ) layer on the storage electrode, and subsequently treating the dielectric layer using a plasma containing oxygen And forming a plate node on the dielectric layer.

The plasma treatment may use an oxygen gas (O ₂ ) plasma, a dinitrogen monoxide gas (N ₂ O), or a nitrogen oxide gas (NO) plasma.

According to the present invention, it is possible to provide a capacitor formation method capable of improving leakage current characteristics, realizing an effect of increasing capacitance, and improving mass productivity.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it should not be construed that the scope of the present invention is limited by the embodiments described below. Embodiments of the invention are preferably to be interpreted as being provided to those skilled in the art to more fully describe the invention.

In an embodiment of the present invention, when the dielectric layer of the capacitor is formed of zirconium oxide (ZrO ₂ ), the deposition temperature of the zirconium oxide is at most 320 ° C or lower than the pyrolysis temperature of the zirconium source, preferably 250 Atomic layer deposition (ALD) is preferably set at a temperature of about 300 ° C to about 300 ° C.

At temperatures above 320 ° C, chemical vapor deposition (CVD) reactions occur predominantly by thermal decomposition of zirconium sources. In this case, impurities such as carbon increase in the zirconium oxide layer and step coverage properties deteriorate. Leakage current may be increased.

However, when ALD deposition of the zirconium oxide layer at a relatively low temperature, the crystallization characteristics of the zirconium oxide may be degraded. In order to overcome this and improve the crystallinity of the zirconium oxide, the zirconium oxide layer deposited at a temperature higher than the deposition temperature after the deposition of zirconium oxide to induce crystallization, for example, approximately 400 to 500 ° C. in an atmosphere containing oxygen Heat treatment.

At this time, heat treatment using an ozone (O ₃ ) atmosphere, that is, ozone treatment is preferably performed. The heat treatment by the ozone atmosphere can supply sufficient oxygen to the zirconium oxide layer by using the relatively high reactivity of ozone, which is more effective in enhancing the crystallinity of the zirconium oxide layer. Nevertheless, heat treatment by an ozone atmosphere may be replaced by a plasma treatment using a plasma of a gas containing oxygen.

Meanwhile, the dielectric layer of the capacitor may be formed in a laminate structure in which a layer of aluminum oxide (Al ₂ O ₃ ) is introduced between the layers of zirconium oxide (ZrO ₂ ). Such a composite layer structure can implement an improvement in leakage current characteristics compared to a single layer of zirconium oxide (ZrO ₂ ), and can also increase productivity in accordance with the introduction of an aluminum oxide layer, which is more advantageous for mass production of memory devices. .

However, when the composite layer is formed by a process such as ALD, it is more advantageous to mass production to perform such a composite layer in an in-situ process in the same process chamber. In this case, although the deposition of the aluminum oxide layer is more advantageously performed at a relatively high temperature such as 400 to 450 ° C., it is preferable that the entire deposition process is performed at a temperature of approximately 250 to 320 ° C. to prevent decomposition of the zirconium source. desirable.

As such, when the optimal deposition temperature of the aluminum oxide layer and the zirconium oxide layer is different, an ex-situ process of depositing the dielectric layer in different process chambers may be more advantageous in terms of the film quality and the degree of crystallization of the dielectric layer. have. Nevertheless, this ex-situ process requires the wafers to be moved to different chambers, resulting in a much lower yield than the in-situ process.

In contrast, the in-situ process can improve the mass productivity, but since the relatively low deposition temperature is set, it is difficult to improve the crystallinity of the dielectric layer such as the zirconium oxide layer, and the leakage current characteristic is deteriorated and the capacitance improvement effect is improved. It can also be lowered. To solve this, the zirconium oxide layer / aluminum oxide layer / zirconium oxide layer is sequentially deposited in-situ, and subsequently deposited at a temperature higher than the deposition temperature to induce crystallization, for example, approximately 400 to 500 ° C. The zirconium oxide layer is post treated in an atmosphere containing oxygen. For example, heat treatment using an ozone (O ₃ ) atmosphere, that is, ozone treatment is preferably performed.

The ozone treatment not only enhances the crystallization of the zirconium oxide layer, but also can remove impurities such as carbon or hydrocarbons in the film quality, or provide an effect of supplying oxygen that may be insufficient in the film quality. As a result, the leakage current characteristics of the capacitor can be greatly improved. In addition, the introduction of the dielectric layer of the entire laminate structure can be implemented to increase the capacitance by reducing the thickness of the dielectric layer.

1 to 7 are cross-sectional views schematically illustrating a method of forming a capacitor according to an embodiment of the present invention. 8 is a cross-sectional view schematically illustrating a method of forming a dielectric layer of a capacitor according to an embodiment of the present invention.

Referring to FIG. 1, an insulating layer 200 is formed on a semiconductor substrate 100, and a contact hole 201 penetrating through the insulating layer 200 is formed. A conductive layer filling the contact hole 201 is formed to form a storage node contact 300 that electrically connects a capacitor and a transistor device (not shown) formed on the semiconductor substrate 100 below.

The storage electrode contact 300 is a chemical vapor deposition (CVD) layer of a conductive material such as conductive doped poly-silicon (CVD) and the electrode is separated by a planarization process such as etch back (etch back) can be formed by separation. Subsequently, an etch stop layer 410 to be used as an etch end point when forming a mold or a mold that shapes the storage electrode having a three-dimensional structure such as a cylinder shape on the storage electrode contact 300. To form. The etch stop layer 410 may include a layer for a mold, for example, a silicon nitride (Si ₃ N ₄ ) layer that may have an etch selectivity with a silicon oxide layer.

Referring to FIG. 2, a layer 430 for a mold is formed on the etch stop layer 410. The mold layer 430 may be formed of an insulating material such as silicon oxide as a layer for a mold that gives a three-dimensional shape to the storage electrode. For example, a mold layer 430 may be formed by depositing a single layer of plasma enhanced tetraethyl orthosilicate (PE-TEOS) or a composite layer of phosphorus silicate glass (PSG) and PE-TEOS. The thickness of the mold layer 430 may be set depending on the height of the capacitor, in particular, the height of the storage electrode.

Referring to FIG. 3, the mold layer 430 is selectively etched to align and expose the lower storage electrode contact 300 to form an opening hole 431.

Referring to FIG. 4, a storage electrode 500 is formed on the storage electrode contact 300 exposed to the opening hole 431 to be electrically connected. For example, after forming a conductive layer that follows the profile of the opening hole 431, the electrode is separated by a planarization method such as etch back or chemical mechanical polishing (CMP) to form one cylinder for each contact 300. The storage electrode 500 is formed.

The storage electrode 500 may be formed of various conductive materials, but may be formed of a titanium nitride (TiN) layer. In addition, before forming the titanium nitride layer, the titanium layer is first formed and heat-treated to induce titanium silicide (TiSi _x ) to be formed at the interface between the titanium layer and the contact silicon 300. The heat treatment for silicide may be performed by rapid heat treatment (RTP), etc., it is possible to implement the effect of improving the contact resistance between the storage electrode 500 and the contact 300 by the production of titanium silicide.

The storage electrode 500 may include a titanium / titanium nitride layer as described above, but may include tungsten nitride (WN), tantalum nitride (TaN), platinum (Pt), ruthenium (Ru), or amorphous silicon layer. It may be formed to include. In this case, the storage electrode 500 may be formed by chemical vapor deposition (CVD), atomic layer deposition (ALD), or the like.

In addition, after the electrode separation of the storage electrode 500, impurities such as chlorine (Cl), which may remain in the storage electrode 500 such as a titanium nitride layer, are removed, and stress caused by heat treatment for silicidation is removed. In order to reduce the heat treatment may be further performed in an inert gas atmosphere, such as nitrogen atmosphere.

Referring to FIG. 5, a dielectric layer 600 along the profile of the storage electrode 500 is formed on the storage electrode 500. The dielectric layer 600 may include a zirconium oxide layer. In this case, the zirconium oxide layer may be deposited by the ALD method and may be formed to have a good step coverage along the profile of the storage electrode 500. ALD deposition includes Zr [N (CH ₃ )] ₄ , Zr [N (CH ₂ CH ₃ )] ₄ , Zr [N (CH ₃ ) (CH ₂ CH ₃ )] ₄ , or Zr [N (CH) as a zirconium source. ₃ ) Precursors in which an organic ligand R is bonded to a zirconium metal atom such as ₂ (CH ₂ CH ₃ ) ₂ ] ₄ may be used.

Such precursors may be pyrolyzed at significantly higher temperatures, such as temperatures higher than approximately 320 ° C. When the zirconium source is pyrolyzed, a chemical vapor deposition process is performed rather than an atomic layer deposition process. Therefore, in order to prevent this, the deposition temperature is performed at a temperature lower than this temperature, for example, a temperature range of about 250 ° C to 320 ° C. It is preferable. However, when zirconium oxide is ALD deposited at such a low deposition temperature, a relatively low degree of crystallization is realized, so that it is difficult to realize the higher dielectric constant required.

Therefore, in the embodiment of the present invention, an additional treatment is performed to improve the crystallinity of the dielectric layer 600 including the zirconium oxide layer.

Meanwhile, although the dielectric layer 600 may be formed of a single layer of a zirconium oxide layer as shown in FIG. 5, in order to improve leakage current characteristics with higher capacitance, as shown in FIG. 8, the aluminum oxide layer and zirconium are shown. It may be formed of a composite layer such as a triple layer of an oxide layer. In this case, the leakage current characteristic can be improved by the laminate structure of Al ₂ O ₃ / ZrO ₂ .

When the deposition of the composite layer is performed as an ex-situ process, since each unit deposition process must be performed in various process chambers, the productivity may be relatively lowered. Therefore, ALD deposition of ZrO ₂ / Al ₂ O ₃ / ZrO ₂ is sequentially performed in an in-situ process in the same process chamber.

In this case, the overall process temperature is preferably carried out at a low temperature, such as about 250 ° C. to 320 ° C., in which the pyrolysis of the zirconium source can be prevented. However, when zirconium oxide is ALD deposited at such a low deposition temperature, a relatively low degree of crystallization is realized, so that it is difficult to realize the higher dielectric constant required. Therefore, in the embodiment of the present invention, an additional process is performed to enhance the crystallinity of the dielectric layer 600.

In this case, Al (CH ₃ ) ₃ may be used as the aluminum source. In addition, ozone gas or water vapor (H ₂ O) may be used as an oxygen source required for ALD deposition of zirconium oxide and ALD deposition of aluminum oxide.

Referring to FIG. 8, the first zirconium oxide layer 610 may be formed to a thickness of about 20 to 80 kPa, and the aluminum oxide layer 630 may be about 2 to 15 kPa in-situ by replacing the source gas. Can be formed. Thereafter, in-situ second zirconium oxide layer 650 may be formed to a thickness of about 20 to about 80 kPa. That is, the aluminum oxide layer 630 may be interpreted as a structure interposing a laminate layer in the middle to reduce leakage current of the entire dielectric layer 600.

Referring to FIG. 6, after forming the dielectric layer 600, in order to enhance crystallinity of the dielectric layer 600, ALD deposition of the dielectric layer 600 in an atmosphere containing oxygen capable of providing oxygen to the dielectric layer 600 is performed. Heat treatment to a temperature higher than the temperature. For example, heat treatment is performed using an ozone gas in a temperature range of approximately 400 to 500 ° C, more preferably approximately 400 to 450 ° C.

This ozone treatment may be carried out for a time of approximately 10 to 1800 seconds, preferably approximately 10 to 180 seconds. At this time, the concentration of ozone is preferably about 100 to 500 g / Nm ³ . In addition, the pressure in the process chamber may be on the order of 0.1 to 760 Torr.

When performing the ozone treatment, it is advantageous to increase the capacitance so that the underlying storage electrode 500 is oxidized so that an unwanted oxide layer structure such as TiN / TiO _x is not generated at the interface.

This ozone treatment is more advantageous when the dielectric layer 600 as shown in FIG. 8 is formed of a laminate structure of the first zirconium oxide layer 610 / aluminum oxide layer 630 / second zirconium oxide layer 650. . Although the aluminum oxide layer 630 is more advantageous for crystal growth of the first zirconium oxide layer 610 when ALD is deposited at a temperature of about 400 to 450 ° C., the aluminum oxide layer 630 is performed in-situ. ) Will be carried out at lower temperatures.

Therefore, by performing ozone treatment after the deposition of the second zirconium oxide layer 650, ozone treatment is performed to supply insufficient oxygen and to enhance crystallization of the zirconium oxide layers 610 and 650. At this time, impurities such as carbon or hydrocarbon, which may remain in the film during the ozone treatment, may also be removed.

Therefore, the increase of the capacitance and the improvement of the leakage current characteristic can be realized by the improvement of the degree of crystallization and the effect of removing impurities. In addition, since the improvement of the leakage current characteristic can be implemented, it is possible to bring the thickness of the entire dielectric layer 600 to a thinner thickness. Therefore, an increase in capacitance due to such a thickness reduction can also be expected. Furthermore, since the dielectric layer 600 of the composite layer may be formed by an in-situ process, an increase in mass productivity may be realized as compared with the case of forming by the ex-situ process.

On the other hand, this ozone treatment process is another process that can provide oxygen, such as a gas containing an oxygen source, such as oxygen (O ₂ ) gas, dinitrogen monoxide (N ₂ O) gas or nitrogen oxide (NO) gas, etc. It may be replaced by a plasma treatment using. In this case, the effect of supplying oxygen to the dielectric layer 600 and enhancing crystallization may be similarly implemented. Nevertheless, ozone treatment is more advantageous because the reactivity of ozone gas is relatively good, and the introduction of a process or equipment for plasma generation can be omitted.

Referring to FIG. 7, a plate node 700 is formed on the dielectric layer 600 to complete a capacitor. The plate electrode 700 may include a double layer of a first plate electrode layer 710 including a metal layer such as a titanium nitride layer and a second plate electrode layer 730 including a doped polysilicon layer. In this case, the first plate electrode layer 710 may be formed by including a double layer of the titanium nitride layer by CVD and physical vapor deposition (PVD) or by including a double layer by ALD and PVD.

Meanwhile, in the above description, the case in which the mold layer 430 is maintained as an intermediate insulating layer has been described as an example. However, the mold layer 430 is selectively removed so that the dielectric layer 600 is formed on the outer side of the storage electrode 500. It may be induced to extend.

9 to 12 are graphs of capacitance and leakage current measurements presented to explain the effect of a capacitor forming method according to an exemplary embodiment of the present invention.

More specifically, FIGS. 9 and 10 illustrate a laminate structure of the first zirconium oxide layer 610 / aluminum oxide layer 630 and the second zirconium oxide layer 650 as the dielectric layer 600 is described with reference to FIG. 8. In the case of forming the circuit diagram, the graphs show the cell capacitance and leakage current data measured in each case formed according to the in-situ process and the ex-situ process. In this case, the comparison criteria are cell capacitance and leakage current values measured in the HAH structure, that is, the hafnium oxide layer-aluminum oxide layer-hafnium oxide layer structure.

In addition, no separate subsequent processing has been introduced, and in the case of the ex-situ process, it can be understood that each deposition step is performed separately in a different process chamber. That is, the first zirconium oxide layer 610 of the ZAZ structure is deposited by an ALD process at a temperature condition of approximately 250 ° C to 320 ° C, and the aluminum oxide layer 630 is ALD at a temperature condition of about 400 ° C to 450 ° C. Process deposited, the second zirconium oxide layer 650 may be understood as a case of deposited by the ALD process at a temperature condition of 250 ℃ to 320 ℃.

In comparison, the in-situ process may be understood as the case where the whole process is formed as shown in FIG. 8 at a temperature process of approximately 250 ° C. to 320 ° C. At this time, the thickness of the zirconium oxide layer was 47 Å, 50 Å, 55 Å, 60 Å and the like to consider the effect of the thickness. In this case, the cell capacitance is the result measured at -0.7V and the leakage current is the result measured at -0.1V.

Measurements on the specimens of the capacitors formed by this process show relatively high capacitance values and low leakage current measurements on the specimens of the ex-situ process. Nevertheless, it can be seen that capacitance and leakage current change as the thickness of the zirconium oxide layer decreases in the in-situ process.

FIG. 11 and FIG. 12 show effects of performing ozone-heat treatment as shown in FIG. 8 on specimens obtained by the in-situ process among the specimens obtained from the results data of FIGS. 9 and 10. Shows capacitance and leakage current data measured after ozone-heat treatment. The results measured on the ozone-treated specimens shown in FIGS. 11 and 12 compared to the data presented in FIGS. 9 and 10 demonstrate that the ozone treatment effectively realizes increased capacitance and reduced leakage current. .

In addition, the results of FIGS. 11 and 12 show that the capacitance is comparable to the ozone treatment, even when there is no heat treatment in the inert atmosphere such as argon gas (Ar), or in the case of the heat treatment in the oxygen gas atmosphere. It can be seen, however, that leakage current is relatively high.

As mentioned above, although this invention was demonstrated in detail through the specific Example, this invention is not limited to this, It is clear that the deformation | transformation and improvement are possible by the person of ordinary skill in the art within the technical idea of this invention.

According to the present invention described above, by depositing a dielectric layer including a zirconium oxide layer by atomic layer deposition, by performing a subsequent heat treatment by ozone heat treatment, it is possible to effectively improve the leakage current characteristics.

Accordingly, when the dielectric layer is formed of a composite layer or a laminate structure of the zirconium oxide layer and the aluminum oxide layer, the ALD deposition process of the zirconium oxide layer and the aluminum oxide layer may be performed in-situ. Therefore, the process step can be reduced by at least one more step compared to the ex-situ process, thereby improving productivity. Even in such a case, it is possible to implement both an increase in capacitance and a decrease in leakage current by ozone heat treatment.

Claims (15)

Forming a mold layer having an opening hole on the semiconductor substrate; Forming a storage node including a metal layer along a profile of the opening hole; Atomic layer deposition (ALD) of a first zirconium oxide layer on the storage electrode; Atomic layer depositing an aluminum oxide layer in-situ on the first zirconium oxide layer; And Atomic layer depositing a second zirconium oxide layer on the aluminum oxide layer to form a dielectric layer; Heat treating the dielectric layer to a temperature higher than a temperature set for the deposition using an ozone (O ₃ ) atmosphere; And Forming a plate node on the dielectric layer. The method of claim 1, Forming a lower insulating layer under the mold layer; And Forming a storage electrode contact including the doped polysilicon layer penetrating the lower insulating layer so as to be aligned with the opening hole; And And a silicide step of performing a heat treatment to generate a metal silicide at an interface between the storage electrode and the contact. The method of claim 2, Prior to the silicide step Depositing a layer of titanium (Ti) in contact with said storage electrode contacts to guide said metal silicide to titanium silicide. The method of claim 1, The storage electrode is Method for forming a capacitor, characterized in that formed by chemical vapor deposition or atomic layer deposition any one selected from the group consisting of titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), platinum and ruthenium. The method of claim 4, wherein The storage electrode is And after the depositing step, separating the electrode by etch back or chemical mechanical polishing (CMP). The method of claim 1, And depositing the dielectric layer at a temperature lower than the thermal decomposition temperature of the zirconium source for the zirconium oxide layer. The method of claim 1, The first or second zirconium oxide (ZrO ₂ ) layer is Zr [N (CH ₃ )] ₄ , Zr [N (CH ₂ CH ₃ )] ₄ , Zr [N (CH ₃ ) (CH ₂ CH ₃ )] ₄ , and Zr [N (CH ₃ ) ₂ (CH ₂ CH ₃ ) ₂ ] ₄ zirconium source comprising any one selected from the group consisting of; And Deposited by the atomic layer deposition using an oxygen source comprising any one selected from the group comprising ozone gas and water vapor; The aluminum oxide layer is an aluminum source containing Al (CH ₃ ) ₃ ; And And depositing by atomic layer deposition using an oxygen source comprising any one selected from the group comprising ozone gas and water vapor. The method of claim 1, Wherein said first or second zirconium oxide layer is deposited to approximately 20 to 80 microns thick and said aluminum oxide layer is deposited to approximately 2 to 15 microns thick. The method of claim 1, Wherein the atomic layer deposition is performed at a temperature range of approximately 250 ° C. to 320 ° C. 2. The method of claim 1, The ozone heat treatment is Method for forming a capacitor, characterized in that performed in the temperature range of approximately 400 to 500 ℃. The method of claim 10, The ozone heat treatment is And at said ozone atmosphere at a concentration of approximately 100 to 500 g / Nm ³ and a process chamber pressure of approximately 0.1 to 760 Torr in said temperature range. The method of claim 1, The plate electrode is And a titanium nitride layer and a doped polysilicon layer. Forming a mold layer having an opening hole on the semiconductor substrate; Forming a storage node including a metal layer along a profile of the opening hole; Depositing a dielectric layer comprising a zirconium oxide (ZrO ₂ ) layer on the storage electrode; Subsequent processing of the dielectric layer using a plasma containing oxygen; And Forming a plate node on the dielectric layer. The method of claim 13, The dielectric layer Atomic layer deposition (ALD) of the first zirconium oxide layer; Atomic layer depositing an aluminum oxide layer in-situ on the first zirconium oxide layer; And Forming an atomic layer of a second zirconium oxide layer on the aluminum oxide layer; And the deposition process is performed at a temperature lower than a thermal decomposition temperature of a zirconium source for the zirconium oxide layer. The method of claim 13, The plasma treatment An oxygen gas (O ₂ ) plasma, a dinitrogen monoxide gas (N ₂ O), or a nitrogen oxide gas (NO) plasma is used.

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