KR100696547B1 - Method for depositing film - Google Patents

Method for depositing film Download PDF

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KR100696547B1
KR100696547B1 KR1020050120913A KR20050120913A KR100696547B1 KR 100696547 B1 KR100696547 B1 KR 100696547B1 KR 1020050120913 A KR1020050120913 A KR 1020050120913A KR 20050120913 A KR20050120913 A KR 20050120913A KR 100696547 B1 KR100696547 B1 KR 100696547B1
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deposition
substrate
unit
moving
present
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KR1020050120913A
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Korean (ko)
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이정열
김재중
유경태
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삼성에스디아이 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

A method for depositing a film is provided to minimize an entire size of a deposition system and to facilitate deposition on a substrate of a large area by simply adding a construction to enlarge a path of a transport unit. A method for depositing a film using a deposition unit(130), wherein at least two deposition sources(131,132) each having a deposition material therein are spaced from each other at the deposition unit(130) by a certain distance in an X-axis direction, includes the steps of: (a) moving the deposition unit in a positive direction of a Y-axis perpendicular to the X-axis, with depositing gas of the deposition material emitted from the deposition source(131,132) on a substrate(120); (b) moving the deposition unit in the X-axis direction by a distance smaller than a predetermined distance; and (c) moving the deposition unit in a negative direction of the Y-axis, with depositing the gas of the deposition material emitted from the deposition source on the substrate.

Description

증착 방법{Method for depositing film}Evaporation method {Method for depositing film}

도 1은 본 발명의 실시예의 증착 방법이 적용되는 증착 시스템의 구성을 도시한 개략적인 단면도이다.1 is a schematic cross-sectional view showing the configuration of a deposition system to which the deposition method of the embodiment of the present invention is applied.

도 2는 도 1의 Ⅱ-Ⅱ선을 따라 자른 단면도이다.FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

도 3은 본 발명의 실시예에 따른 증착유닛이 구비한 증착원의 개략적인 단면도이다.3 is a schematic cross-sectional view of a deposition source provided with a deposition unit according to an embodiment of the present invention.

도 4 내지 도 6은 본 실시예의 셔터와 증착원의 관계를 예를 들어 도시한 개략적인 도면이다.4 to 6 are schematic views showing, for example, the relationship between the shutter and the deposition source of this embodiment.

도 7 내지 도 9는 본 발명의 실시예에 따른 증착 방법을 개략적으로 도시한 도면이다.7 to 9 schematically illustrate a deposition method according to an embodiment of the present invention.

도 10은 본 발명의 실시예에 따른 제1차증착층이 기판에 형성된 모습을 개략적으로 도시한 단면도이다. 10 is a cross-sectional view schematically illustrating a state in which a first deposition layer is formed on a substrate according to an embodiment of the present invention.

도 11은 본 발명의 실시예에 따른 제1차증착층 및 제2차증착층이 모두 기판에 형성된 모습을 개략적으로 도시한 단면도이다. FIG. 11 is a schematic cross-sectional view of a first deposition layer and a second deposition layer both formed on a substrate according to an exemplary embodiment of the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

110: 진공챔버 120: 기판110: vacuum chamber 120: substrate

121: 기판홀더 130: 증착유닛 121: substrate holder 130: deposition unit

131, 132: 증착원 133, 134: 셔터131, 132: evaporation source 133, 134: shutter

140: 마스크 141: 마스크 프레임 140: mask 141: mask frame

150: 이송수단 160: 제1차증착층150: transfer means 160: the first deposition layer

170: 제2차증착층170: second deposition layer

본 발명은 증착 방법에 관한 것으로써, 더욱 상세하게는 균일한 두께의 증착층을 형성할 수 있는 증착 방법에 관한 것이다. The present invention relates to a deposition method, and more particularly to a deposition method capable of forming a deposition layer of uniform thickness.

일반적으로 유기 전계 발광 소자는 기판 상부에 소정 패턴의 양극층이 형성되고, 이 양극층 상부로 홀수송층, 발광층, 전자수송층 등의 유기막이 순차적으로 형성되며, 이들 유기막의 상부에 상기 양극층과 직교하는 방향으로 소정패턴의 음극층이 형성되어 있는 구조를 갖는다. In general, an organic electroluminescent device has an anode layer having a predetermined pattern formed on a substrate, and organic films such as a hole transport layer, a light emitting layer, and an electron transport layer are sequentially formed on the anode layer, and are orthogonal to the anode layer on the organic film. It has a structure in which a cathode layer of a predetermined pattern is formed in the direction.

이러한 구성을 가지는 유기 전계 발광 소자에 있어서, 홀수송층, 발광층, 전자수송층 등 유기박막을 형성시키는 기술로 진공 증착법이 널리 사용된다. 이 진공 증착법은, 내부 압력이 10-6 내지 10-7 torr로 조절되는 진공챔버 내부에 증착층을 형성시킬 기판을 위치시키고, 증착유닛을 이용하여 유기물 등의 증착재료를 증발 또는 승화시켜 기판에 증착시키는 방법으로 행해진다.In the organic electroluminescent device having such a structure, the vacuum vapor deposition method is widely used as a technique for forming an organic thin film such as a hole transport layer, a light emitting layer, an electron transport layer. In this vacuum deposition method, a substrate is formed in a vacuum chamber in which an internal pressure is controlled to 10 −6 to 10 −7 torr, and a deposition material such as an organic material is evaporated or sublimed onto the substrate by using a deposition unit. It is performed by the method of vapor deposition.

상기와 같은 진공 증착법은, 증착시킬 기판의 크기가 커짐에 따라, 상호간에 소정의 간격으로 배치된 복수개의 증착원을 구비한 증착유닛을 구성하고, 그러한 증착유닛을 소정의 방향으로 이동하는 방법을 사용하여 기판의 증착을 수행하여 왔다. In the vacuum deposition method as described above, as the size of the substrate to be deposited increases, a method of constructing a deposition unit having a plurality of deposition sources arranged at predetermined intervals from each other and moving the deposition unit in a predetermined direction is provided. Deposition has been performed.

그런데, 그와 같은 종래의 증착 방법은, 복수개의 증착원에서 방출되는 증착재료의 가스가 기판에 증착되는데, 각 증착원이 소정의 거리만큼 이격되어 있으므로, 형성되는 증착층의 두께가 불균일 해진다는 단점이 있었다. 즉, 증착층이 형성되는 기판의 부분 중 각 증착원의 직상방에 위치한 부분에만 증착층의 두께가 두껍게 되고, 각 증착원의 사이의 공간에 대응하는 기판 부분의 증착층의 두께는 얇게 되어, 기판에 형성되는 증착층의 두께가 불균일해짐으로써, 그 성능이 저하되는 등 여러가지 문제점을 야기하여 왔다.By the way, in such a conventional deposition method, the gas of the deposition material emitted from the plurality of deposition sources is deposited on the substrate, and since the deposition sources are spaced by a predetermined distance, the thickness of the deposition layer to be formed becomes uneven. There was a downside. That is, the thickness of the deposition layer becomes thick only in the portion located directly above each deposition source among the portions of the substrate on which the deposition layer is formed, and the thickness of the deposition layer of the substrate portion corresponding to the space between the deposition sources becomes thin. Since the thickness of the vapor deposition layer formed in a board | substrate becomes nonuniform, various performances, such as the performance fall, have arisen.

본 발명은 상기한 바와 같은 문제점들을 해결하기 위하여 안출된 것으로서, 균일한 두께의 증착층을 형성할 수 있는 증착 방법을 제공하는 것을 목적으로 한다.The present invention has been made to solve the problems described above, and an object thereof is to provide a deposition method capable of forming a deposition layer having a uniform thickness.

위와 같은 목적을 포함하여 그 밖에 다른 목적을 달성하기 위하여, 본 발명은, 증착재료가 수납된 적어도 두개의 증착원을 구비하되 상기 증착원은 상호간에 소정의 거리를 가지도록 X축 방향으로 배치된 증착유닛을 사용한 증착 방법에 있어서, (a) 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 기판에 증착시키면서 상기 X축 방향에 수직인 Y축의 양의 방향으로 상기 증착유닛을 이동시키는 단 계;와, (b) 상기 (a)단계 이후에 상기 증착유닛을 상기 소정의 거리 보다 작은 거리만큼 상기 X축 방향으로 이동시키는 단계;와, (c) 상기 (b)단계 이후에, 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 상기 기판에 증착시키면서 상기 증착유닛을 Y축의 음의 방향으로 이동시키는 단계;를 포함하는 증착 방법을 제공한다.In order to achieve the above and other objects, the present invention is provided with at least two deposition sources containing the deposition material, the deposition sources are arranged in the X-axis direction to have a predetermined distance from each other A deposition method using a deposition unit, comprising: (a) moving the deposition unit in a positive direction of a Y axis perpendicular to the X axis direction while depositing a gas of the deposition material emitted from the deposition source onto a substrate; (B) moving the deposition unit in the X-axis direction by a distance smaller than the predetermined distance after step (a); and (c) after step (b), from the deposition source. Moving the deposition unit in the negative direction of the y-axis while depositing the gas of the deposition material discharged onto the substrate.

여기서, 상기 증착원은 상기 증착재료를 가열하는 가열수단을 구비하는 것이 바람직하다.Here, the deposition source preferably includes heating means for heating the deposition material.

여기서, 상기 (b)단계에서 상기 증착유닛을 상기 X축 방향으로 이동시키는 거리는 상기 소정의 거리의 1/2인 것이 바람직하다.Here, the distance for moving the deposition unit in the X-axis direction in the step (b) is preferably 1/2 of the predetermined distance.

여기서, 상기 증착유닛은 상기 증착재료 가스의 방출을 제어하는 셔터를 구비하는 것이 바람직하다.Here, the deposition unit is preferably provided with a shutter for controlling the release of the deposition material gas.

여기서, 상기 셔터를 이용하여 제어함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 할 수 있다. Here, by controlling using the shutter, the amount of deposition material deposited on the substrate in the step (c) may be smaller than the amount of deposition material deposited on the substrate in the step (a).

여기서, 상기 (c)단계에서의 상기 증착유닛의 이동속도를 상기 (a)단계의 증착유닛의 이동속도보다 더 빠르게 함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 할 수 있다.Here, the moving speed of the deposition unit in the step (c) is faster than the moving speed of the deposition unit in the step (a), so that the amount of deposition material deposited on the substrate in the step (c) is (a) In step) it may be less than the amount of deposition material deposited on the substrate.

여기서, 상기 (b)단계 이후에, 상기 증착유닛의 증착원들 중 상기 기판에 상기 증착재료를 증착시킬 수 없을 정도로 상기 기판으로부터 떨어져 있는 증착원은, 상기 (c)단계에서 상기 증착재료의 가스를 방출하지 않도록 할 수 있다.Here, after the step (b), the deposition source away from the substrate to the extent that it is impossible to deposit the deposition material on the substrate among the deposition sources of the deposition unit, the gas of the deposition material in the step (c) Can be released.

이하, 첨부된 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 실시예의 증착 방법이 적용되는 증착 시스템의 구성을 도시한 개략적인 단면도이고, 도 2는 도 1의 Ⅱ-Ⅱ선을 따라 자른 단면도이다.1 is a schematic cross-sectional view showing the configuration of a deposition system to which the deposition method of the embodiment of the present invention is applied, and FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1.

본 실시예의 증착방법이 적용되는 증착 시스템의 구성은, 진공챔버(110), 기판(120), 증착유닛(130), 마스크(140)를 포함하고 있다.The construction of the deposition system to which the deposition method of this embodiment is applied includes a vacuum chamber 110, a substrate 120, a deposition unit 130, and a mask 140.

도 1 및 도 2를 참조하여 자세히 살펴보면, 진공챔버(110)의 내부에는 유기물 등의 증착재료를 진공증착하고자 하는 기판(120)이 기판홀더(121)에 장착되고, 기판(120)의 하부에는 증착유닛(130)이 설치된다.1 and 2, in detail, a substrate 120 for vacuum depositing a deposition material such as an organic material is mounted on the substrate holder 121 in the vacuum chamber 110, and below the substrate 120. The deposition unit 130 is installed.

또한, 기판(120)과 증착유닛(130) 사이에는, 기판(120)에 증착층을 증착하고자 하는 패턴과 동일한 패턴의 개구를 가진 마스크(140)가 설치되는데, 마스크(140)는 마스크 프레임(141)에 의해 지지된다. In addition, between the substrate 120 and the deposition unit 130, a mask 140 having an opening of the same pattern as the pattern to be deposited on the substrate 120 is provided, the mask 140 is a mask frame ( 141).

증착유닛(130)은 각각 2개의 증착원(131)(132)과 셔터(133)(134)를 구비한다.The deposition unit 130 includes two deposition sources 131 and 132 and shutters 133 and 134, respectively.

증착원(131)(132)은 증착재료 가스를 방출하는 기능을 수행하며, 상호간에 소정의 거리(d)를 두고 X축 방향으로 일렬로 배치되어 있다. 여기서, 소정의 거리(d)는 증착재료 가스의 양, 기판(120)의 크기 등을 고려하여, 설계자가 적절히 결정한다.The deposition sources 131 and 132 discharge the deposition material gas, and are disposed in a line in the X-axis direction with a predetermined distance d from each other. Here, the predetermined distance d is determined appropriately by the designer in consideration of the amount of the deposition material gas, the size of the substrate 120, and the like.

본 실시예의 증착유닛(130)은 2개의 증착원(131)(132)을 가지고 있지만, 본 발명은 이에 한정하지 않는다. 즉, 본 실시예의 증착유닛이 구비하는 증착원의 개수는 특별히 한정되지 않는다. 즉, 본 실시예의 증착유닛은 기판의 크기에 따라, 3개, 4개 등의 증착원을 구비할 수도 있다.Although the deposition unit 130 of the present embodiment has two deposition sources 131 and 132, the present invention is not limited thereto. That is, the number of deposition sources included in the deposition unit of this embodiment is not particularly limited. That is, the deposition unit of this embodiment may be provided with three, four or more deposition sources, depending on the size of the substrate.

또한, 본 실시예의 증착유닛(130)의 증착원(131)(132)은 X축 방향으로 배열되어 있지만, 본 발명은 반드시 그에 한정하는 것은 아니다. 즉, 본 발명의 증착원들의 배열 방향은 증착유닛의 이동방향과 수직이기만 하면 된다. 따라서, 만약, 본 발명의 증착유닛이 4개의 증착원을 구비하는 경우에는 X축의 방향으로 4개의 증착원을 배열할 수도 있고, X축의 방향으로 2개의 증착원을 배열하고, 나머지 2개의 증착원은 먼저 배열한 증착원들 뒤에 X축의 방향으로 배열함으로써, 결과적으로는 2×2행렬의 형상으로 배치될 수도 있다. In addition, although the deposition sources 131 and 132 of the deposition unit 130 of this embodiment are arranged in the X-axis direction, the present invention is not necessarily limited thereto. That is, the arrangement direction of the deposition sources of the present invention need only be perpendicular to the moving direction of the deposition unit. Therefore, if the deposition unit of the present invention has four deposition sources, four deposition sources may be arranged in the direction of the X axis, two deposition sources are arranged in the direction of the X axis, and the remaining two deposition sources are used. By arranging in the direction of the X axis behind the deposition sources arranged first, as a result, it may be arranged in the shape of a 2 x 2 matrix.

본 실시예의 증착유닛(130)의 셔터(133)(134)는 각 증착원(131)(132)의 상부에 배치되어, 증착원(131)(132)으로부터 방출되는 증착재료 가스의 양을 제어하는 기능을 수행한다. Shutters 133 and 134 of the deposition unit 130 of the present embodiment are disposed above the deposition sources 131 and 132 to control the amount of deposition material gas emitted from the deposition sources 131 and 132. It performs the function.

도 4 내지 도 6은 본 실시예의 셔터와 증착원의 관계를 예를 들어 도시한 개략적인 도면이다. 즉, 도 4는 증착원(131)이 셔터(133)에 의해 차단되지 않고 모두 개방된 경우의 모습을 개략적으로 도시한 도면으로써, 도 4의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스가 모두 기판(120)에 증착된다.4 to 6 are schematic views showing, for example, the relationship between the shutter and the deposition source of this embodiment. That is, FIG. 4 schematically illustrates a state in which the evaporation source 131 is completely opened without being blocked by the shutter 133. In the case of FIG. 4, evaporation material emitted from the evaporation source 131. The gases are all deposited on the substrate 120.

또한, 도 5는 증착원(131)이 셔터(133)에 의해 일부 차단된 경우의 모습을 개략적으로 도시한 도면으로써, 도 5의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스의 일부만이 기판(120)에 증착되게 된다. In addition, FIG. 5 is a view schematically illustrating a case where the deposition source 131 is partially blocked by the shutter 133. When the deposition source 131 is partially illustrated in FIG. 5, only a part of the deposition material gas emitted from the deposition source 131 is illustrated. The substrate 120 is to be deposited.

또한, 도 6은 증착원(131)이 셔터(133)에 의해 모두 차단된 경우의 모습을 개략적으로 도시한 도면으로써, 도 6의 경우가 되면 증착원(131)으로부터 방출되는 증착재료 가스의 모두가 기판(120)에 증착되지 않게 된다. In addition, FIG. 6 schematically illustrates a state in which the deposition source 131 is all blocked by the shutter 133. In FIG. 6, all of the deposition material gases emitted from the deposition source 131 are illustrated. Is not deposited on the substrate 120.

본 실시예의 증착유닛(130)은 셔터(133)(134)를 구비하고 있지만, 본 발명은 이에 한정하지 않는다. 즉, 본 발명의 증착유닛은 셔터를 구비하지 않아도 된다. 그 경우, 증착원으로부터 방출되는 증착재료 가스의 양의 제어는 증착유닛의 이동속도와, 가열을 위해 증착원에 투입되는 에너지로 제어할 수 있다.Although the deposition unit 130 of the present embodiment includes the shutters 133 and 134, the present invention is not limited thereto. That is, the deposition unit of the present invention does not have to have a shutter. In that case, the control of the amount of the deposition material gas emitted from the deposition source can be controlled by the moving speed of the deposition unit and the energy input to the deposition source for heating.

이하, 도 3을 참조하여, 증착원(131)(132)의 구체적인 구조를 살펴보도록 한다.Hereinafter, a detailed structure of the deposition sources 131 and 132 will be described with reference to FIG. 3.

도 3은 본 발명의 실시예에 따른 증착유닛이 구비한 증착원의 개략적인 단면도이다.3 is a schematic cross-sectional view of a deposition source provided with a deposition unit according to an embodiment of the present invention.

본 실시예에서의 2개의 증착원(131)(132)은 동일한 구조를 가지고 있으므로, 그 중 증착원(131)에 대해 설명하기로 한다.Since the two deposition sources 131 and 132 in the present embodiment have the same structure, the deposition source 131 will be described.

증착원(131)은 용기본체(131a), 가열수단(131b) 및 커버(131c)를 포함하고 있다.The deposition source 131 includes a container body 131a, a heating means 131b, and a cover 131c.

용기본체(131a)는 저면이 폐쇄된 구조를 가지고 있기 때문에 내부에 증착재료(131d)을 수납할 수 있는 구조로 되어 있으며, 그 상부에는 개구부(131e)를 구비하고 있다.Since the container body 131a has a closed bottom structure, the container body 131a has a structure capable of accommodating the deposition material 131d therein, and has an opening 131e thereon.

용기본체(131a)는 절연성 및 열방사성이 우수한 알루미나(Al2O3), 질화알루 미늄(AlN)과 같은 세라믹 재질로 형성된다.The container body 131a is formed of a ceramic material such as alumina (Al 2 O 3 ) and aluminum nitride (AlN) having excellent insulation and thermal radiation.

용기본체(131a)는 수납된 증착재료(131d)의 가열 및 기화가 용이하게 이루어질 수 있도록 원통의 형상으로 형성하는 것이 바람직하고, 개구부(131e)의 크기는 수납되는 증착재료(131d)의 증착 조건 및 증착 상태에 따라 적절한 변형이 가능하다. 여기서, 증착재료(131d)는 전술한 바와 같이 유기 박막의 형성을 위한 유기물, 무기 박막의 형성을 위한 무기물 등일 수 있다. The container body 131a is preferably formed in a cylindrical shape so as to easily heat and vaporize the deposited deposition material 131d, and the size of the opening 131e is a deposition condition of the deposited deposition material 131d. And suitable modification depending on the deposition state. As described above, the deposition material 131d may be an organic material for forming an organic thin film, an inorganic material for forming an inorganic thin film, or the like.

가열수단(131b)은 용기본체(131a)의 외면을 밀착하여 둘러싸도록 구성되어 있는데, 용기본체(131a)에 수납된 증착재료(131d)를 가열하는 기능을 수행한다.The heating means 131b is configured to closely surround the outer surface of the container body 131a, and serves to heat the deposition material 131d contained in the container body 131a.

가열수단(131b)은 용기본체(131a) 내부의 증착재료(131d)를 가열하기 위한 것이면 되고, 그 구조 및 형상에 특별한 제한이 없다. 예를 들면, 용기본체(131a)를 둘러싸는 코일의 형상으로 형성될 수도 있고, 용기본체(131a)의 외벽에 소정의 패턴으로 코팅하여 형성되는 박막 가열수단의 형상으로도 형성될 수 있다.The heating means 131b should just be for heating the deposition material 131d in the container body 131a, and there is no particular limitation on the structure and shape thereof. For example, it may be formed in the shape of a coil surrounding the container body 131a, or may be formed in the shape of a thin film heating means formed by coating a predetermined pattern on the outer wall of the container body 131a.

또한, 본 실시예에서는 용기본체(131a)의 측면부에만 가열수단(131b)이 형성되는 것으로 도시되었으나, 본 발명은 이에 한정하지 않는다. 즉, 본 발명에 따른 가열수단은 용기본체(131a)의 외부 바닥면에도 추가로 형성될 수 있다.In addition, in the present embodiment, the heating means 131b is formed only on the side of the container body 131a, but the present invention is not limited thereto. That is, the heating means according to the present invention may be further formed on the outer bottom surface of the container body (131a).

커버(131c)는 용기본체(131a)의 상부에 위치하여 개구부(131e)를 덮도록 되어 있으며, 열방사성이 우수한 알루미나(Al2O3), 질화알루미늄(AlN)과 같은 세라믹 재질로 형성된다.The cover 131c is positioned above the container body 131a to cover the opening 131e, and is formed of a ceramic material such as alumina (Al 2 O 3 ) and aluminum nitride (AlN) having excellent thermal radiation.

커버(131c)는 노즐(131f)을 구비하고 있는데, 그 노즐(131f)로는 기화되거나 승화된 증착재료 가스가 토출된다.The cover 131c includes a nozzle 131f, and vaporized or sublimed vapor deposition material gas is discharged to the nozzle 131f.

본 실시예에서의 용기본체(131a)와 커버(131c)는 세라믹의 재질로 되어 있지만, 본 발명은 이에 한정되지 않는다. 즉, 본 발명의 용기본체와 커버의 재질은 열방사성 및 내열성이 우수한 재질로 이루어지면 되고, 그 외의 특별한 제한은 없다. 즉, 예를 들면, 용기본체 및 커버는 열방사성이 우수한 티타늄과 같은 금속 재질로 이루어져도 된다. 또한, 용기본체는 세라믹으로 형성되고, 커버는 금속의 재질로 형성되는 것과 같이, 용기본체와 커버가 각각 상이한 재료로 이루어져도 된다.Although the container body 131a and the cover 131c in this embodiment are made of a ceramic material, the present invention is not limited thereto. That is, the material of the container body and the cover of the present invention may be made of a material having excellent heat radiation and heat resistance, and there is no particular limitation. That is, for example, the container body and the cover may be made of a metal material such as titanium having excellent thermal radiation property. In addition, the container body may be made of a ceramic, and the cover may be made of a material of metal, such that the container body and the cover may be made of different materials.

마찬가지로, 증착원(132)도 동일한 구조의 용기본체, 가열수단, 커버, 증착재료, 개구부 및 노즐을 구비한다.Similarly, the deposition source 132 also includes a container body, a heating means, a cover, a deposition material, an opening, and a nozzle having the same structure.

이상과 상기와 같은 구성을 가지는 증착유닛(130)의 하부에는 증착유닛(130)을 이동시키기 위한 이송수단(150)이 구비된다. The transfer means 150 for moving the deposition unit 130 is provided below the deposition unit 130 having the above configuration.

이송수단(150)은 증착유닛(130)의 직선운동이 가능하도록 구성되고, 컨베이어 벨트 시스템, 레일이 설치되고 바퀴를 이용하여 이동하는 이송 시스템 등으로 구성이 가능한데, 증착유닛(130)을 이송시킬 수 있으면, 그 이송 기구 구성에 특별한 제한은 없다.The transfer means 150 is configured to enable the linear movement of the deposition unit 130, it is possible to configure a conveyor belt system, a transfer system that is installed rails and move using the wheel, etc., to transfer the deposition unit 130 If possible, there is no particular limitation on the configuration of the transfer mechanism.

이하, 도 7 내지 도 9를 참조하여, 본 실시예에 따른 기판의 증착 방법에 대해 살펴보기로 한다.Hereinafter, a method of depositing a substrate according to the present embodiment will be described with reference to FIGS. 7 to 9.

도 7 내지 도 9는 본 발명의 실시예에 따른 증착 방법을 개략적으로 도시한 도면이다.7 to 9 schematically illustrate a deposition method according to an embodiment of the present invention.

우선, 진공챔버(110)의 내부에 진공증착하고자 하는 기판(120)이 증착위치로 배치되면, 마스크(140)가 기판(120)에 밀착되게 된다.First, when the substrate 120 to be vacuum deposited in the vacuum chamber 110 is disposed in the deposition position, the mask 140 is in close contact with the substrate 120.

이 후, 기판(120)에 증착을 수행하게 되는데, 다음과 같이 크게 (a)단계, (b)단계, (c)단계를 거쳐 증착을 수행하게 된다.Thereafter, deposition is performed on the substrate 120. The deposition is performed through the steps (a), (b), and (c) as follows.

먼저, (a)단계는, 도 7에 도시된 바와 같이, 증착유닛(130)이 기판(120)에 증착을 수행하면서, 동시에 Y축의 양(＋)의 방향으로 이동하게 되는 단계이다. First, as shown in FIG. 7, as illustrated in FIG. 7, the deposition unit 130 performs deposition on the substrate 120 while simultaneously moving in the positive (+) direction of the Y axis.

즉, 증착을 위해 증착원(131)(132)의 가열수단(131b)(132b)이 작동하게 되는데, 증착원(131)(132)은 셔터(133)(134)에 의해 차단되지 않고 완전히 개방되어 있으므로, 증착재료(131d)(132d)의 가스가 증착원(131)(132)의 외부로 방출되어, 기판(120)의 증착이 이루어지게 된다. 그와 동시에, 증착유닛(130)은 이송수단(150)에 의해 소정의 속도로 Y축의 양의 방향으로 이동하게 된다. 여기서, 소정의 속도란 증착되는 증착층이 설계자가 결정한 두께를 가질 수 있을 정도의 속도를 의미하고, Y축의 양의 방향은 증착원(131)(132)이 배열되는 방향인 X축 방향에 수직인 방향을 의미한다. That is, the heating means 131b and 132b of the deposition sources 131 and 132 operate for deposition, and the deposition sources 131 and 132 are not completely blocked by the shutters 133 and 134 and are completely opened. As a result, the gases of the deposition materials 131d and 132d are discharged to the outside of the deposition sources 131 and 132, so that the deposition of the substrate 120 is performed. At the same time, the deposition unit 130 is moved by the transfer means 150 in the positive direction of the Y axis at a predetermined speed. Here, the predetermined speed means a speed that the deposition layer to be deposited can have a thickness determined by the designer, and the positive direction of the Y axis is perpendicular to the X axis direction, which is the direction in which the deposition sources 131 and 132 are arranged. It means the direction of phosphorus.

이와 같은 방식으로, (a)단계를 거치게 되면, 도 10에 도시된 바와 같이 소정두께의 제1차증착층(160)이 기판(120)에 형성되게 된다. 여기서, 제1차증착층(160)은 두 개의 증착층(161)(162)으로 이루어지는데, 증착층(161)은 증착원(131)의 증착에 의한 것이고, 그에 이웃하는 증착층(162)은 증착원(132)의 증착에 의한 것이다. 증착층(161)(162) 사이에는 오목한 부분(163)이 존재하는데, 이는 증착원(131)(132)이 서로 소정의 거리(d)를 두고 배치되기 때문에 증착이 균일하게 이루어지지 않기 때문이다. In this manner, when the step (a) is performed, as shown in FIG. 10, the first deposition layer 160 having a predetermined thickness is formed on the substrate 120. Here, the first deposition layer 160 is composed of two deposition layers 161 and 162, the deposition layer 161 is by the deposition of the deposition source 131, the adjacent deposition layer 162 Is by deposition of the evaporation source 132. A recessed portion 163 is present between the deposition layers 161 and 162 because deposition is not uniform because the deposition sources 131 and 132 are disposed at a predetermined distance d from each other. .

그 다음, (b)단계는 (a)단계 이후에 수행되는데, 도 8에 도시된 바와 같이, 이송수단(150)을 이용하여 증착유닛(130)을 X축 방향으로 이동시키는 단계이다. Then, step (b) is performed after step (a), as shown in FIG. 8, to move the deposition unit 130 in the X-axis direction using the transfer means 150.

즉, 증착유닛(130)을 이송수단(150)을 이용하여 X축 방향으로 이동시키되, 그 이동거리(t)는 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 이동시킨다. 이동거리(t)를 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 하는 이유는, 다음의 (c)단계에서 제1차증착층(160)의 오목한 부분(163)에 증착원(131)으로 보강증착을 행하고자 하기 때문이다.That is, the deposition unit 130 is moved in the X-axis direction using the transfer means 150, and the moving distance t is 1 / time of the predetermined distance d between the deposition sources 131 and 132. Move to 2 The reason why the moving distance t is one half of the predetermined distance d between the deposition sources 131 and 132 is that the first deposition layer 160 is concave in the following step (c). This is because reinforcement deposition is performed on the portion 163 as the deposition source 131.

본 실시예의 (b)단계에서 X축 방향으로 이동되는 증착유닛(130)의 이동거리(t)는 증착원(131)(132) 사이의 상기 소정의 거리(d)의 1/2이 되도록 하나, 본 발명은 이에 한정되지 않는다. 즉, 본 발명의 (b)단계에서 X축 방향으로 이동되는 증착유닛(130)의 이동거리(t)는, 상기 소정의 거리(d) 보다 작게 됨으로써 제1차증착층(160)의 보강증착을 수행할 수 있기만 하면 되고, 반드시 상기 소정의 거리(d)의 1/2이 되지 않아도 된다.In step (b) of the present embodiment, the moving distance t of the deposition unit 130 moved in the X-axis direction is one of 1/2 of the predetermined distance d between the deposition sources 131 and 132. The present invention is not limited to this. That is, in step (b) of the present invention, the moving distance t of the deposition unit 130 moving in the X-axis direction is smaller than the predetermined distance d so that the reinforcing deposition of the first deposition layer 160 is performed. It is only necessary to be able to carry out the operation, and it does not necessarily have to be 1/2 of the predetermined distance d.

한편, (b)단계에서는 증착이 이루어지지 않으므로, 셔터(133)(134)로 증착원(131)(132)을 막아, 증착재료 가스를 증착유닛(130)으로부터 방출되지 않도록 제어한다.Meanwhile, since the deposition is not performed in step (b), the deposition sources 131 and 132 are blocked by the shutters 133 and 134 to control the deposition material gas from being emitted from the deposition unit 130.

그 다음, (c)단계는 (b)단계 이후에 수행되는데, 도9에 도시된 바와 같이, 증착유닛(130)의 증착원(131)이 기판(120)에 증착을 수행하면서, 동시에 Y축의 음(－)의 방향으로 이동하게 되는 단계이다. Then, step (c) is performed after step (b), as shown in FIG. 9, while the deposition source 131 of the deposition unit 130 performs deposition on the substrate 120, at the same time, This step is to move in the negative (-) direction.

즉, 이송수단(150)을 이용하여, 증착유닛(130)을 Y축의 음의 방향으로 이동 시키는 동시에, 증착원(131)에서 방출된 증착재료(131d)의 가스를 기판에 증착시킨다. 여기서, Y축의 음의 방향이란, (a)단계에서의 증착유닛(130)의 이동방향인 Y축의 양의 방향과 반대 방향을 의미한다. That is, the transfer unit 150 is used to move the deposition unit 130 in the negative direction of the Y axis, and to deposit the gas of the deposition material 131d emitted from the deposition source 131 on the substrate. Here, the negative direction of the Y axis means a direction opposite to the positive direction of the Y axis, which is the moving direction of the deposition unit 130 in step (a).

여기서, 증착원(132)은 구동되나, 그로부터 발생하는 증착재료(132d)의 가스는 기판(120)에 증착되지 않는다. 이는, (b)단계에서 증착유닛(130)을 X축 방향으로 이동시킴에 의해, 증착원(132)의 위치가 X축 방향으로 충분히 기판(120)으로부터 떨어져 있기 때문인데, 따라서, 이때는 셔터(134)를 이용하여 증착원(132)으로부터 발생되는 증착재료(132d)의 가스를 차단한다. Here, the deposition source 132 is driven, but the gas of the deposition material 132d generated therefrom is not deposited on the substrate 120. This is because the position of the deposition source 132 is sufficiently separated from the substrate 120 in the X-axis direction by moving the deposition unit 130 in the X-axis direction in step (b). 134 blocks the gas of the deposition material 132d generated from the deposition source 132.

본 실시예의 (c)단계에서는 셔터(134)를 이용하여 증착원(132)으로부터 발생되는 증착재료(132d)의 가스를 차단하나, 본 발명은 이에 한정되지 않는다. 즉, 본 발명은 증착원(132)에 에너지의 공급을 중단함으로써, 증착재료의 가스의 발생 자체를 중단시킬 수도 있다. In the step (c) of the present embodiment, the gas of the deposition material 132d generated from the deposition source 132 is blocked by using the shutter 134, but the present invention is not limited thereto. That is, the present invention may stop the generation of the gas of the deposition material by stopping the supply of energy to the deposition source 132.

또한, 본 (c)단계에서 증착되는 증착재료의 양은 상기 (a)단계에서 증착되는 증착재료의 양보다 적은데, 이는 본 (c)단계에서의 증착은 단지 제1차증착층(160)의 두께를 균일하게 하는 목적만을 가지기 때문이다. 따라서, 이를 위해 셔터(133)를 이용하여 증착재료의 양을 조절한다.In addition, the amount of the deposition material deposited in the step (c) is less than the amount of the deposition material deposited in the step (a), which means that the deposition in the step (c) is merely the thickness of the first deposition layer 160. It is because it has only the purpose of making it uniform. Therefore, for this purpose, the amount of deposition material is controlled using the shutter 133.

본 실시예의 (c)단계에서는 셔터(133)를 이용하여 증착재료 가스의 양을 조절함으로써, 증착되는 증착층의 두께를 조절하지만, 본 발명은 이에 한정하지 않는다. 즉, 본 발명에 따르면 이동하는 증착유닛의 속도를 조절함으로써, 증착되는 증착재료 가스의 양을 조절할 수 있다. 즉, 증착유닛의 속도를 빠르게 하면 증착되는 시간이 그만큼 줄게 되므로, 증착되는 증착재료의 양을 줄일 수 있고, 증착유닛의 속도를 느리게 하면 증착되는 시간이 그만큼 늘어나게 되므로, 증착되는 재료의 양을 늘일 수 있게 된다.In step (c) of the present embodiment, the thickness of the deposition layer to be deposited is controlled by adjusting the amount of the deposition material gas by using the shutter 133, but the present invention is not limited thereto. That is, according to the present invention, by controlling the speed of the moving deposition unit, it is possible to control the amount of the deposition material gas to be deposited. In other words, if the speed of the deposition unit is increased, the deposition time is reduced by that much. Therefore, the amount of deposition material to be deposited can be reduced. It becomes possible.

이와 같은 방식으로, (c)단계를 거치게 되면, 도 11에 도시된 바와 같이 소정 두께의 제2차증착층(170)이 기판(120)에 형성되게 된다. 여기서, 제2차증착층(170)은 제1차증착층(160)의 오목한 부분(163)에 증착됨으로써, 제1차증착층(160)의 불균일한 두께를 보정할 수 있게 된다. In this manner, when the step (c) is performed, as shown in FIG. 11, the second deposition deposition layer 170 having a predetermined thickness is formed on the substrate 120. In this case, the second deposition layer 170 is deposited on the concave portion 163 of the first deposition layer 160, thereby making it possible to correct a nonuniform thickness of the first deposition layer 160.

이상과 같이, 본 실시예에 따른 증착 방법은, 2개의 증착원(131)(132)을 가지는 증착유닛(130)을 사용하고, 상기 (a), (b), (c)단계를 순차적으로 수행함으로써, 기판(120)에 균일한 두께의 증착층을 형성할 수 있는 장점이 있다. As described above, in the deposition method according to the present embodiment, the deposition unit 130 having two deposition sources 131 and 132 is used, and the steps (a), (b) and (c) are sequentially performed. By doing so, there is an advantage in that a deposition layer having a uniform thickness can be formed on the substrate 120.

상술한 바와 같은 본 발명에 따르면 다음과 같은 효과를 얻을 수 있다.According to the present invention as described above, the following effects can be obtained.

첫째, 본 발명에 따른 증착 방법을 이용하면, 복수개의 증착원을 구비한 증착유닛을 이동시켜 증착함에 있어서, 균일한 두께의 증착층을 기판에 형성할 수 있는 효과가 있다. First, using the deposition method according to the present invention, in the deposition by moving the deposition unit having a plurality of deposition sources, there is an effect that can form a deposition layer of a uniform thickness on the substrate.

둘째, 본 발명에 따른 증착 방법을 이용하면, 균일한 두께의 증착층을 형성하기 위한 설비가 간단히 구성될 수 있으므로, 증착유닛 및 증착 시스템의 소형화를 이룰 수 있다. Secondly, using the deposition method according to the present invention, since a facility for forming a deposition layer having a uniform thickness can be simply configured, it is possible to miniaturize the deposition unit and the deposition system.

셋째, 본 발명에 따른 증착 방법을 이용하면, 증착유닛의 증착원의 수를 증가시키고, 이송수단의 경로를 늘리는 구성을 단순히 추가함으로써, 대면적의 기판 의 증착도 용이하게 수행할 수 있다는 효과가 있다.Third, by using the deposition method according to the present invention, by simply adding a configuration that increases the number of deposition sources of the deposition unit and increases the path of the transfer means, it is possible to easily perform deposition of a large-area substrate have.

넷째, 본 발명에 따른 증착 방법을 디스플레이 장치에 적용되는 유기물의 박막 형성에 적용한다면, 균일한 유기박막의 형성이 가능하게 되므로, 유기박막의 수명, 효율, 구동을 위한 전압의 산포를 제거할 수 있는 효과가 있다.Fourth, if the deposition method according to the present invention is applied to the formation of a thin film of the organic material applied to the display device, it becomes possible to form a uniform organic thin film, it is possible to eliminate the dispersion of the voltage for the lifetime, efficiency, and driving of the organic thin film It has an effect.

본 발명은 첨부된 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 수 있을 것이다. 따라서 본 발명의 진정한 보호 범위는 첨부된 청구 범위에 의해서만 정해져야 할 것이다.Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.

Claims (7)

증착재료가 수납된 적어도 두개의 증착원을 구비하되, 상기 증착원은 상호간에 소정의 거리를 가지도록 X축 방향으로 배치된 증착유닛을 사용한 증착 방법에 있어서, In the deposition method using at least two deposition sources containing the deposition material, the deposition source is disposed in the X-axis direction to have a predetermined distance between each other, (a) 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 기판에 증착시키면서, 상기 X축 방향에 수직인 Y축의 양의 방향으로 상기 증착유닛을 이동시키는 단계;(a) moving the deposition unit in a positive direction of the Y axis perpendicular to the X axis direction while depositing a gas of the deposition material emitted from the deposition source onto a substrate; (b) 상기 (a)단계 이후에, 상기 증착유닛을 상기 소정의 거리 보다 작은 거리만큼 상기 X축 방향으로 이동시키는 단계;(b) after step (a), moving the deposition unit in the X-axis direction by a distance smaller than the predetermined distance; (c) 상기 (b)단계 이후에, 상기 증착원으로부터 방출되는 상기 증착재료의 가스를 상기 기판에 증착시키면서, 상기 증착유닛을 Y축의 음의 방향으로 이동시키는 단계를 포함하는 증착 방법.and (c) after step (b), moving the deposition unit in the negative direction of the Y axis while depositing a gas of the deposition material discharged from the deposition source onto the substrate. 제1항에 있어서,The method of claim 1, 상기 증착원은 상기 증착재료를 가열하는 가열수단을 구비한 증착 방법.And the evaporation source comprises heating means for heating the evaporation material. 제1항에 있어서,The method of claim 1, 상기 (b)단계에서 상기 증착유닛을 상기 X축 방향으로 이동시키는 거리는 상기 소정의 거리의 1/2인 증착 방법.And the distance for moving the deposition unit in the X-axis direction in step (b) is 1/2 of the predetermined distance. 제1항에 있어서,The method of claim 1, 상기 증착유닛은 상기 증착재료 가스의 방출을 제어하는 셔터를 구비하는 증착 방법.And the deposition unit includes a shutter for controlling the release of the deposition material gas. 제4항에 있어서,The method of claim 4, wherein 상기 셔터를 이용하여 제어함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 하는 증착 방법. Controlling by using the shutter, such that the amount of deposition material deposited on the substrate in step (c) is less than the amount of deposition material deposited on the substrate in step (a). 제1항에 있어서,The method of claim 1, 상기 (c)단계에서의 상기 증착유닛의 이동속도를 상기 (a)단계의 증착유닛의 이동속도보다 더 빠르게 함으로써, 상기 (c)단계에서 상기 기판에 증착되는 증착재료의 양은 상기 (a)단계에서 상기 기판에 증착되는 증착재료의 양보다 작도록 하는 증착 방법. The moving speed of the deposition unit in step (c) is faster than the moving speed of the deposition unit in step (a), so that the amount of deposition material deposited on the substrate in step (c) is the step (a). And less than the amount of deposition material deposited on the substrate. 제1항에 있어서,The method of claim 1, 상기 (b)단계 이후에, 상기 증착유닛의 증착원들 중 상기 기판에 상기 증착재료를 증착시킬 수 없을 정도로 상기 기판으로부터 떨어져 있는 증착원은, 상기 (c)단계에서 상기 증착재료의 가스를 방출하지 않도록 하는 증착 방법. After the step (b), the deposition source spaced apart from the substrate such that the deposition material cannot be deposited on the substrate among the deposition sources of the deposition unit, the gas of the deposition material releases in the step (c). Deposition method to avoid.
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