KR100671117B1 - Hardmask composition having antireflective property - Google Patents

Abstract

Provided are an antireflective hardmask composition which can be applied by using spin-on application technique, is useful for lithographic process of short wavelength, and retains a minimum amount of remaining acid, and a method for patterning a back material layer on substrate by using the composition. The composition contains (A) an aromatic ring-having polymer of the formula(3); (B) a crosslinking component; and (C) an acidic catalyst. In the formula(3), n is 1<=n<=190, each R1 and R2 is hydrogen, -OH, C1-C10 alkyl group, C6-C10 aryl group, allyl group, or halogen atom, and each R3 and R4 is hydrogen, or comprises a chromophore moiety or reactive moiety reacting with the crosslinking component. The method for patterning a back material layer comprises the steps of (i) preparing a material layer on substrate; (ii) forming an antireflective hardmask layer on the material layer by using the composition; (iii) forming a radiation-sensitive imaging layer on the imaging layer; (iv) exposing the imaging layer to radiation in patterned type, so as to forming a pattern of radiation-exposed area in the imaging layer; (v) selectively removing a part of the imaging layer and the antireflective layer; and (vi) etching an exposed part of the material layer to form a configuration of patterned material.

Description

Hard mask composition having antireflection {HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTY}

1 is the ¹ H-NMR spectrum of the polymer prepared in Example 2, and

2 is an FT-IR spectrum of the polymer prepared in Example 2. FIG.

FIELD OF THE INVENTION The present invention relates to hardmask compositions having antireflective properties useful in lithographic processes, more particularly containing aromatic rings having strong absorption in short wavelength ranges (e.g., 157, 193, 248 nm). A hardmask composition comprising a polymer.

In the microelectronics industry as well as in other industries, including the fabrication of microscopic structures (eg, micromachines, magnetoresist heads, etc.), there is a continuing need to reduce the size of structural features. In the microelectronics industry, there is a desire to reduce the size of microelectronic devices, thereby providing a larger amount of circuitry for a given chip size.

Effective lithographic techniques are essential to achieving a reduction in shape size. Lithographic influences the fabrication of microscopic structures not only in terms of directly imaging the pattern on a given substrate, but also in the manufacture of masks typically used for such imaging.

Typical lithographic processes involve forming a patterned resist layer by patterning exposing the radiation-sensitive resist to imaging radiation. The image is then developed by contacting the exposed resist layer with any material (typically an aqueous alkaline developer). The pattern is then transferred to the backing material by etching the material in the openings of the patterned resist layer. After the transfer is completed, the remaining resist layer is removed.

Most of the lithographic processes increase the resolution by using an antireflective coating (ARC) to minimize the reflectivity between the imaging layer, such as a layer of radiation sensitive resist material and backing layer. However, many imaging layers may also be consumed during the etching of the ARC after patterning, requiring further patterning during subsequent etching steps.

In other words, for some lithographic imaging processes, the resist used does not provide sufficient resistance to subsequent etching steps to effectively transfer a desired pattern to the layer behind the resist. Many practical examples (e.g. when ultra thin resist layers are required, when the backing material to be etched is thick, when a significant amount of etching depth is required and / or by using an etchant specific to a given backing material) In this case, a so-called hardmask layer is used as an intermediate between the resist layer and the backing material which can be patterned by transfer from the patterned resist. The hardmask layer must be able to withstand the etching process required to receive the pattern from the patterned resist layer and transfer the pattern to the backing material.

Although many hardmask materials exist in the prior art, there is a continuing need for improved hardmask compositions. Many such prior art materials are difficult to apply to substrates, and therefore may require the use of chemical or physical deposition, special solvents, and / or high temperature firing, for example. It is desirable to have a hardmask composition that can be applied by spin-coating techniques without the need for high temperature firing. In addition, it is desirable to have a hardmask composition that can easily be easily etched into the backside photoresist, while at the same time resisting the etching process required to pattern the backside layer, especially when the backside layer is a metal layer. It is also desirable to provide adequate shelf life and to avoid inhibited interactions with the imaging resist layer (eg, by acid contamination from the hardmask). In addition, it is desirable to have a hardmask composition having certain optical properties for image radiation of shorter wavelengths (eg, 157, 193, 248 nm).

In conclusion, it is desirable to perform lithographic techniques using anti-reflective compositions that have high etch selectivity, sufficient resistance to multiple etching, and minimize reflectivity between the resist and backing layer. This lithographic technology will enable the production of very detailed semiconductor devices.

The present invention is to solve the problems of the prior art as described above, and an object of the present invention is to provide a novel hard mask composition usefully used in lithographic processes.

Another object of the present invention is to provide a method of patterning a backing material layer on a substrate using the hardmask composition of the present invention.

That is, one aspect of the invention relates to a composition suitable for the formation of a spin-on antireflective hardmask layer, wherein the composition is

(a) an aromatic ring containing polymer having strong absorption in the short wavelength region;

(b) crosslinking components; And

(c) an acid catalyst.

Another aspect of the invention relates to a method of forming a patterned material shape on a substrate, the method of

(a) providing a layer of material on the substrate;

(b) forming an antireflective hardmask layer using the composition of the present invention over the material layer;

(c) forming a radiation-sensitive imaging layer over the antireflective layer;

(d) generating a pattern of radiation-exposed areas within the imaging layer by exposing the imaging layer to the radiation in a pattern manner;

(e) selectively removing portions of the imaging layer and antireflective layer to expose portions of the material layer; And

(f) forming the patterned material shape by etching the exposed portion of the material layer.

These and other aspects of the invention are discussed in the detailed description below.

The hardmask composition of the present invention is characterized by the presence of an aromatic ring containing polymer having strong absorption in the short wavelength region (eg, 157, 193, 248 nm).

That is, the antireflective hard mask composition of the present invention

(a) an aromatic ring containing polymer having strong absorption in the short wavelength region;

(b) crosslinking components; And

(c) an acid catalyst.

In the hardmask composition of the present invention, the aromatic ring of the (a) aromatic ring-containing polymer is preferably present in the skeleton portion of the polymer. In addition, the aromatic ring-containing polymer preferably contains a plurality of reactive sites distributed along the polymer reacting with the crosslinking component, and preferably includes phenol, cresol, and naphthol in its unit unit. In addition, they must have solution and film-forming properties to help form the layer by conventional spin-coating.

On the other hand, the crosslinking component (b) used in the hard mask composition of the present invention is preferably capable of crosslinking the repeating unit of the polymer by heating in a reaction catalyzed by the generated acid, and the (c) acid catalyst Is preferably a thermally activated acid catalyst.

Specifically, the (a) aromatic ring-containing polymer used in the hard mask composition of the present invention preferably comprises at least one polymer selected from the group consisting of the following Chemical Formulas 1 to 3.

Wherein n is in the range 1 ≦ n <190,

R ₁ and R ₂ are each a hydrogen, a hydroxy group (-OH), C _{1 -10} alkyl, C _{6 -10} aryl group, an allyl group or a halogen atom of, and

R ₃ and R ₄ each comprise a reactive site or a chromophore site which is hydrogen or reacts with a crosslinking component.

Where

R ₅ is

R ₆ is hydrogen, an alkyl group of C _{1 -10,} aryl group of C _{6 -10} or an allyl group, and

n, R ₁ , R ₂ , R ₃ and R ₄ are the same as defined in Chemical Formula 1.

Wherein n, R ₁ , R ₂ , R ₃ and R ₄ are the same as defined in Formula 1.

More specifically, in the reactive site-containing groups R ₃ and R ₄ of the aromatic ring-containing polymer of the present invention, preferred reactive sites include, but are not limited to, epoxide groups or alcohols.

In addition, in the chromophore-containing groups R ₃ and R ₄ of the aromatic ring-containing polymer of the present invention, preferred chromophore moieties are aromatic chromophores already included in the backbone of the polymer in the case of radiation of 193 nm and 248 nm wavelengths, In addition, R ₃ and R ₄ may be phenyl, chrysene, pyrene, fluoranthrene, anthrone, benzophenone, thioxanthone, anthracene and anthracene derivatives, which are structures capable of chromophore functions. 9-anthracene methanol is a preferred chromophore. The chromophore moiety preferably does not contain nitrogen except for possible deactivated amino nitrogen such as phenol thiazine.

In the hard mask composition of the present invention, the aromatic ring-containing polymer includes a homopolymer or two or more copolymers selected from the group consisting of Chemical Formulas 1 to 3, and a blend combination of these homopolymers and copolymers is also included. do.

As for the aromatic ring containing polymer of this invention, it is more preferable that it is about 1,000-30,000 based on a weight average molecular weight.

On the other hand, the crosslinking component (b) used in the hard mask composition of the present invention is preferably a crosslinking agent that can be reacted with the hydroxy of the aromatic ring-containing polymer in a manner that can be catalyzed by the resulting acid. Generally, the crosslinking agents used in the antireflective hardmask compositions of the present invention include etherified amino resins, such as methylated or butylated melamine resins (N-methoxymethyl-melamine resins or N-butoxymethyl-melamines). Resins), and etherified amino resins, such as methylated or butylated Urea Resin resins (Cymel U-65 Resin or UFR 80 Resin), methylated / butylated glycols such as the structures shown below. Compounds having the following structure, such as ruther (Powderlink 1174), for example the compound described in Canadian Patent No. 1 204 547, 2,6-bis (hydroxymethyl) -p-cresol compound, for example Japanese Patent Laid-Open The compounds described in 1-293339. The above amino resins and glycolurils can be purchased from Cytec Industries. Bisepoxy-based compounds can also be used as crosslinking agents.

As the acid catalyst (c) used in the hard mask composition of the present invention, a general organic acid such as p-toluenesulfonic acid mono hydrate (p-toluenesulfonic acid mono hydrate) may be used. ) Can be used as a catalyst. TAG is an acid generator compound intended to release acid upon heat treatment, for example pyridine p-toluenesulfonic acid, 2,4,4,6-tetrabromocyclohexadienone, benzoin Preference is given to using tosylate, 2-nitrobenzyl tosylate, other alkyl esters of organic sulfonic acids, and the like.

Examples of suitable radiation-sensitive acid catalysts are described in US Pat. Nos. 5,886,102 and 5,939,236. In addition, other radiation-sensitive acid catalysts known in the resist art can be used as long as they are compatible with the other components of the antireflective composition.

The hard mask composition of the present invention comprises (a) 1 to 20% by weight of an aromatic ring-containing polymer having strong absorption in a short wavelength region, more preferably 3 to 10% by weight, and (b) 0.1 to 5 crosslinking components. It is preferable to contain weight%, More preferably, 0.1 to 3 weight%, and (c) 0.001 to 0.05 weight% of an acid catalyst, More preferably, 0.001 to 0.03 weight%.

The hardmask composition of the present invention may additionally contain a solvent such as propylene glycol monomethyl ether acetate commonly used in resists, and may also contain surfactants and the like.

On the other hand, the present invention includes a method of patterning a backing material layer on a substrate using the hardmask composition.

Specifically, the method of forming the patterned material shape on the substrate

(a) providing a layer of material on the substrate;

(b) forming an antireflective hardmask layer using the composition of the present invention over the material layer;

(c) forming a radiation-sensitive imaging layer over the antireflective layer;

(d) generating a pattern of radiation-exposed areas within the imaging layer by exposing the imaging layer to the radiation in a pattern manner;

(e) selectively removing portions of the imaging layer and antireflective layer to expose portions of the material layer; And

(f) forming the patterned material shape by etching the exposed portion of the material layer.

The method of forming the patterned material shape on the substrate according to the present invention may be specifically performed as follows. First, a material to be patterned, such as aluminum and SiN (silicon nitride), is formed on a silicon substrate according to a conventional method. The material to be patterned used in the hardmask composition of the present invention can be any conductive, semiconducting, magnetic or insulating material. Subsequently, a hard mask layer is formed by spin-coating with a hard mask composition of the present invention at a thickness of 500 kPa to 4000 kPa, and baked at 100 ° C to 300 ° C for 10 seconds to 10 minutes to form a hardmask layer. When the hard mask layer is formed, a radiation-sensitive imaging layer is formed, and a development process of exposing an area where a pattern is to be formed is performed by an exposure process through the imaging layer. Subsequently, the imaging layer and the antireflective layer are selectively removed to expose a portion of the material layer, and generally dry etching is performed using a CHF ₃ / CF ₄ mixed gas or the like. After the patterned material shape is formed, any resist that remains may be removed by conventional photoresist strippers.

Thus, the compositions of the present invention and formed lithographic structures can be used in the manufacture and design of integrated circuit devices in accordance with semiconductor manufacturing processes as follows. For example, it can be used to form patterned material layer structures, such as metal wiring, holes for contacts or bias, insulating sections (e.g., damascene trenches or shallow trench isolations), trenches for capacitor structures, and the like. Can be. It is also to be understood that the invention is not limited to any particular lithographic technique or device structure.

* Semiconductor manufacturing process

Hereinafter, the present invention will be described in more detail with reference to Examples, but the following Examples are for illustrative purposes only and are not intended to limit the present invention.

Example  1: Synthesis of Compound (1)

28.03 g (0.08 mol) of 4,4 '-(9-fluorenylidene) diphenol and 0.3 p-toluenesulfonic acid in a 1 L four-necked flask equipped with a mechanical stirrer, a cooling tube, a 300 ml dropping funnel and a nitrogen gas introduction tube. g was dissolved in 200 g of γ-butyrolactone, the flask was heated in an oil bath stirred with a magnetic stirrer while introducing nitrogen gas, and when the internal temperature of the reaction solution reached 100 ° C, -A solution in which 7.94 g of 2-hydroxybenzaldehyde was dissolved in 100 g of 1-methoxy-2-propanol was slowly added dropwise for 30 minutes, and then reacted for 12 hours. After completion of the reaction, the reaction vessel was sufficiently cooled to room temperature, and then the reaction solution was adjusted to a solution of 20% by weight using methylamine ketone (hereinafter referred to as MAK), washed three times with a 3L separatory funnel, and concentrated on an evaporator. It was. It was then diluted with MAK and methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). The solution was placed in a 3 L separatory funnel, and n-heptane was added thereto to remove the low molecular weight containing the monomer to obtain the desired phenol resin (Mw = 12,000, polydispersity = 1.9, n = 22).

Example  2: Synthesis of Compound (2)

8.31 g (0.05 mol) of 1,4-bis (methoxymethyl) benzene and 0.154 diethyl sulfate were introduced into a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 300 ml dropping funnel, and a nitrogen gas introduction tube. Stir well with g (0.001 mol) and 200 g of γ-butyrolactone. After 10 minutes, a solution of 28.02 g (0.08 mol) of 4,4 '-(9-fluorenylidene) diphenol in 200 g of γ-butyrolactone was slowly added dropwise for 30 minutes, followed by reaction for 12 hours. . After completion of the reaction, the acid was removed using water, and then concentrated by an evaporator. It was then diluted with MAK and methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). The solution was placed in a 3 L separatory funnel, and n-heptane was added thereto to remove the low molecular weight containing the monomer to obtain the desired phenol resin (Mw = 12,000, polydispersity = 2.0, n = 23). In addition, ¹ H-NMR spectrum and FT-IR spectrum of the synthesized phenol resin were measured and shown in FIGS. 1 and 2.

Example  2-1: Compound (3) Synthesis

8.31 g (0.05 mol) of 1,4-bis (methoxymethyl) benzene and 0.154 diethyl sulfate were introduced into a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 300 ml dropping funnel, and a nitrogen gas introduction tube. Stir well with g (0.001 mol) and 200 g of γ-butyrolactone. After 10 minutes, a solution of 11.54 g (0.08 mol) of 1-naphthol dissolved in 200 g of γ-butyrolactone was slowly added dropwise for 30 minutes, followed by reaction for 12 hours. After completion of the reaction, the acid was removed using water, and then concentrated by an evaporator. It was then diluted with MAK and methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). The solution was placed in a 3 L separatory funnel, and n-heptane was added thereto to remove the low molecular weight containing the monomer to obtain the desired phenol resin (Mw = 11,500, polydispersity = 2.4, n = 44).

Example  2-2: Compound (4) Synthesis

8.31 g (0.05 mol) of 1,4-bis (methoxymethyl) benzene and 0.154 diethyl sulfate were introduced into a 1 liter four-necked flask equipped with a mechanical stirrer, a cooling tube, a 300 ml dropping funnel, and a nitrogen gas introduction tube. Stir well with g (0.001 mol) and 200 g of γ-butyrolactone. After 10 minutes, a solution of 7.53 g (0.08 mol) of phenol in 200 g of γ-butyrolactone was slowly added dropwise for 30 minutes, followed by reaction for 12 hours. After completion of the reaction, the acid was removed using water, and then concentrated by an evaporator. It was then diluted with MAK and methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). The solution was placed in a 3 L separatory funnel, and n-heptane was added thereto to remove the low molecular weight containing the monomer to obtain the desired phenol resin (Mw = 10,300, polydispersity = 2.3, n = 48).

Example  3: Synthesis of Compound (5)

Mechanical Agitator, Cooling Tube, 300ml Enemy Funnel Nitrogen gas An introduction tube  4,4'- while introducing nitrogen gas into a 1 liter four-necked flask Vis ( Chloromethyl 12.56 g (0.)-1,1'-biphenyl 05 Mall ) And 26.66 g of aluminum chloride and 200 g of γ- Butyrolactone  Contain and stir well. After 10 minutes 4,4 '-(9- Fluorenylidene Diphenol 35.03 g (0. 10 mall ) 200g γ- To butyrolactone  Slowly melt the dissolved solution for 30 minutes Dropping  Then for 12 hours The reaction was carried out . After completion of the reaction, the acid was removed using water, and then concentrated by an evaporator. next MAK Diluted with methanol and concentrated to 15% by weight. MAK / Methanol = 4/1 (weight ratio). 3 liters of this solution To the funnel  Into it, add n-heptane to it, Monomers  Remove the low molecular weight containing Phenolic resin (Mw = 4100, n = 7-8)  Got it.

Comparative example  1: Synthesis of Compound (6)

Mechanical Agitator, Cooling Tube, 300ml Enemy Funnel Nitrogen gas An introduction tube  7.5 liters of phenol (0. 08 Mall ) And p- Toluenesulfonic acid  0.3g to 200g γ- To butyrolactone  With the dissolved solution and flowing nitrogen gas, Stir and  there is In the oil tank  When the flask was heated and the internal temperature of the reaction solution reached 100 ° C, Enemy With funnel  5.27 g of 37 wt% aqueous formaldehyde solution (0. 065 Mall ) Slowly for 30 minutes Dropping  12 hours The reaction was carried out . After completion of the reaction, the reaction vessel was cooled to room temperature sufficiently, and then the reaction solution was MAK Adjust to 20% by weight solution using 3L With a funnel  3rd time By washing with water  Concentrated by evaporator. next MAK And diluted with methanol and adjusted to a solution of 15 wt% MAK / methanol = 4/1 (weight ratio). 3 liters of this solution To the funnel  Into it, add n-heptane to it, Monomers  Containing Low molecular weight  It removed and obtained the target phenol resin (Mw = 6000, n = 55-56).

Example  4

Example  0.8g of polymer made from 1 and the repetition of the structural units below Oligomer  State Crosslinking agent ( Powderlink  1174) 0.2 g Pyridinium  P-dilunium sulfonate sulfonate 2 mg of propylene glycol monoethyl acetate (Propyleneglycolmonoethylacetate) PGMEA It was dissolved in 9g and filtered to make a sample solution.

Powderlink  1174 structure

Example  5

Example  0.8 g of polymer made from 2 Crosslinking agent ( Powderlink  1174) 0.2 g Pyridinium  P-toluene Sulfonate  2mg PGMEA  It was dissolved in 9g and filtered to make a sample solution.

Example  5-1

0.8 g of the polymer prepared in Example 2-1, 0.2 g of a crosslinking agent (Powderlink 1174), and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g, followed by filtration to prepare a sample solution.

Example  5-2

0.8 g of the polymer prepared in Example 2-2, 0.2 g of a crosslinking agent (Powderlink 1174), and 2 mg of pyridinium P-toluene sulfonate were dissolved in 9 g of PGMEA, and filtered to prepare a sample solution.

Example  6

0.8 g of the polymer prepared in Example 3, 0.2 g of a crosslinking agent (Powderlink 1174), and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g, and then filtered to prepare a sample solution.

Comparative example  2

0.8 g of the polymer prepared in Comparative Example 1, 0.2 g of a crosslinking agent (Cymel 303), and 2 mg of pyridinium P-toluene sulfonate were dissolved in PGMEA 9 g, and then filtered to prepare a sample solution.

Example  7

The samples made in Example 4-6 and Comparative Example 2 were coated on a silicon wafer by spin-coating to bake at 200 ° C. for 60 seconds to form a film having a thickness of 1500 Å.

Example  8

The refractive index n and extinction coefficient k of the films prepared in Example 7 were obtained. The instrument used was Ellipsometer (J. A. Woollam) and the measurement results are shown in Table 1.

Table 1

Example  9

Example  4-6 lessons Comparative example  The sample prepared in 2 was coated on a silicon wafer coated with aluminum by spin-coating, and baked at 200 ° C. for 60 seconds to form a film having a thickness of 1500 Å.

Example  10

The photoresist for KrF was coated on the film prepared in Example 9, baked at 110 ° C. for 60 seconds, and exposed to light using an exposure equipment of ASML (XT: 1400, NA 0.93), followed by development with TMAH (2.38 wt% aqueous solution). And using a FE-SEM to examine the line and space (line and space) pattern of 90nm as shown in Table 2 below. The exposure latitude (EL) margin according to the change of the exposure dose and the depth of focus (DoF) margin according to the distance change with the light source are considered and recorded in Table 2.

TABLE 2

Example  11

Example  Patterned specimens CHF ₃ Of CF ₄  Dry etching using the gas mixture, and then BCl ₃ Of Cl ₂  Dry etching was again performed using the mixed gas. Finally O ₂ Gas is used to remove all remaining organic matter, then FE SEM The cross section was examined and the results are listed in Table 3.

TABLE 3

Example  12

Example  Psalms made in 7 CHF ₃ Of CF ₄  Dry etching using mixed gas Thickness difference  It is listed in Table 4.

Table 4

Example  13

Example  4-6 lessons Comparative example  Sample made in 2 SiN ( Silicon nitride ) Was coated on the silicon wafer coated with spin-coating, and baked at 200 ° C. for 60 seconds to form a film having a thickness of 1500 Å.

Example  14

The ArF photoresist was coated on the film prepared in Example 13, baked at 110 ° C. for 60 seconds, exposed to light using an ArF exposure equipment, ASML1250 (FN70 5.0 active, NA 0.82), and developed using TMAH (2.38 wt% aqueous solution). . And using a FE-SEM to examine the line and space (line and space) pattern of 80nm as shown in Table 5 below. The exposure latitude (EL) margin according to the change of the exposure dose and the depth of focus (DoF) margin according to the distance change with the light source were considered and recorded in Table 5.

Table 5

Example  15

Example  Patterned specimens CHF ₃ Of CF ₄  Dry etching is performed using the mixed gas, and then the selectivity CHF ₃ Of CF ₄  Dry etching was again performed using the mixed gas. Finally O ₂ Gas is used to remove all remaining organic matter, then FE SEM The cross section was examined and the results are listed in Table 6.

Table 6

The compositions according to the invention provide very good optical, mechanical and etch selectivity properties, while at the same time providing applicability using a spin-on application technique. In addition, the compositions have good shelf life and have minimal or no acid pollutant content.

Claims (9)

(a) an aromatic ring-containing polymer represented by Formula 3 below; (b) crosslinking components; And (c) an antireflective hardmask composition comprising an acid catalyst: [Formula 3]

Wherein n is in the range 1 ≦ n <190, R ₁ and R ₂ are each a hydrogen, a hydroxy group (-OH), C _{1 -10} alkyl, C _{6 -10} aryl group, an allyl group or a halogen atom of, and R ₃ and R ₄ each comprise a reactive site or a chromophore site which is hydrogen or reacts with a crosslinking component. The composition of claim 1, wherein said composition is  (a) 1 to 20% by weight of an aromatic ring containing polymer,  (b) 0.1 to 5% by weight of the crosslinking component,  (c) 0.001 to 0.05 wt% of an acid catalyst, An antireflection hard mask composition comprising an organic solvent as a residual amount. The composition of claim 1, wherein the aromatic ring-containing polymer is 1,000 to 30,000 based on the weight average molecular weight. The composition of claim 1, wherein said composition further comprises a solvent or a surfactant. The composition of claim 1, wherein the chromophore moiety is selected from the group consisting of phenyl, chrysene, pyrene, fluoranthrene, anthrone, benzophenone, thioxanthone, anthracene and anthracene derivative. The composition according to claim 1, wherein the crosslinking component is selected from the group consisting of melamine resin, amino resin, glycoluril compound and bisepoxy compound. The method of claim 1, wherein the acid catalyst is p-toluenesulfonic acid mono hydrate, pyridine p-toluenesulfonic acid, 2,4,4,6-tetrabromocyclohexa A dieneon, benzoin tosylate, 2-nitrobenzyl tosylate, and another alkyl ester of organic sulfonic acid. (a) providing a layer of material on the substrate; (b) forming an antireflective hardmask layer using the composition according to claim 1 over the material layer; (c) forming a radiation-sensitive imaging layer over the antireflective layer; (d) generating a pattern of radiation-exposed areas within the imaging layer by exposing the imaging layer to the radiation in a pattern manner; (e) selectively removing portions of the imaging layer and antireflective layer to expose portions of the material layer; And (f) forming the patterned material shape by etching the exposed portion of the material layer. A semiconductor integrated circuit device formed by the method according to claim 8.

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