KR100668729B1

KR100668729B1 - Method for Fabricating of Semiconductor Device

Info

Publication number: KR100668729B1
Application number: KR1020010037670A
Authority: KR
Inventors: 김영철
Original assignee: 주식회사 하이닉스반도체
Priority date: 2001-06-28
Filing date: 2001-06-28
Publication date: 2007-01-26
Also published as: KR20030002323A

Abstract

본 발명은 웨이퍼 에지부에서　발생되는　문제와　파티클（Particle)을　제어하기 위한 반도체 소자의 제조방법에 관한 것으로,　포토레지스트와의　접착력을　향상시키기　위하여　소수성　처리된　실리콘　웨이퍼에　있어서，　상기　웨이퍼의　에지에　친수성　처리하는　단계，　상기　웨이퍼상에　반사방지막과　포토레지스트를　차례로　형성하는　단계，　상기　웨이퍼의　에지부를　제외한　더미　패턴을　　노광하는　단계를　포함하여　이루어진다． BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device manufacturing method for controlling a particle and a particle generated at a wafer edge. The present invention relates to a hydrophobic silicon wafer processed to improve adhesion to a photoresist, and thus to the edge of the wafer. A step of hydrophilic treatment, a step of sequentially forming an anti-reflection film and a photoresist on the wafer, and a step of exposing a dummy pattern excluding the edge of the wafer.

EBR(Edge Bead Removal) Edge Bead Removal (EBR)

Description

Method for manufacturing a semiconductor device {Method for Fabricating of Semiconductor Device}

도 1a는 종래 기술에 따른 웨이퍼의 평면도 1A is a plan view of a wafer according to the prior art

도 1b는 도 1a의 a-a' 방향의 상세 단면도 FIG. 1B is a detailed cross-sectional view of the a-a 'direction of FIG. 1A

도 2는 종래 기술에 따른 반도체 제조방법으로 형성된 웨이퍼의 불량 패턴을 촬영한 SEM 사진 Figure 2 is a SEM photograph of the defect pattern of the wafer formed by a semiconductor manufacturing method according to the prior art

도 3은 SiO2막의 친수성 처리 반응을 나타낸 도면 3 shows a hydrophilic treatment reaction of a SiO 2 film.

도 4a는 본 발명의 실시예에 따른 웨이퍼의 평면도 4A is a top view of a wafer in accordance with an embodiment of the present invention.

도 4b는 도 4a의 b-b' 방향의 상세 단면도 FIG. 4B is a detailed cross-sectional view in the b-b 'direction of FIG. 4A

도면의 주요 부분에 대한 부호 설명 Explanation of symbols for the main parts of the drawings

41 : 웨이퍼 42 : 유기 반사방지막 41 wafer 42 organic antireflection film

43 : 포토레지스트 43: photoresist

본 발명은 반도체 소자에 관한 것으로 특히, 웨이퍼 에지(Wafer Edge)에서 발생되는 문제와 파티클을 제어하기 위한 반도체 소자의 제조방법에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices, and more particularly, to a method of manufacturing a semiconductor device for controlling particles and problems occurring at a wafer edge.

현재, 실리콘 웨이퍼(Si Wafer)에서의 포토 패터닝(Photo Patterning)시 표 면은 대부분 실리콘(Si) 또는 실리콘 옥사이드(SiO2)이다. Currently, the surface during photo patterning on a silicon wafer (Si Wafer) is mostly silicon (Si) or silicon oxide (SiO 2).

그리고, 실리콘(Si)의 경우는 표면에 자연 산화막인 SiO2층이 형성된다. 이에 포토레지스트 코팅시 접착력을 좋게 하기 위하여 HMDS(HexaMethyleneDiSiloxane)를 이용하여 상기 SiO2막을 표면을 소수성으로 변화시켜 주고 있다. In the case of silicon (Si), a SiO 2 layer as a natural oxide film is formed on the surface. Accordingly, in order to improve adhesion of the photoresist coating, the surface of the SiO 2 layer is changed to hydrophobicity by using HexaMethyleneDiSiloxane (HMDS).

도 1a는 종래 기술에 따른 웨이퍼의 평면도이고, 도 1b는 도 1a의 a-a' 방향의 상세 단면도이고, 도 2는 종래 기술에 따른 반도체 제조　방법으로 형성된 웨이퍼의 불량 패턴을 촬영한 SEM 사진이다. 1A is a plan view of a wafer according to the prior art, FIG. 1B is a detailed cross-sectional view of the a-a 'direction of FIG. 1A, and FIG. 2 is a SEM photograph of a defect pattern of a wafer formed by a semiconductor fabrication method according to the prior art.

종래의 웨이퍼 에지 처리는 도 1a에 도시된 바와 같이, 웨이퍼(11)상에 유기 반사방지막(Organic BARC)(12)과 포토레지스트(13)를 코팅한 후에 시너(Thinner)를 이용하여 처리한다. Conventional wafer edge treatment is performed by using thinner after coating the organic BARC 12 and the photoresist 13 on the wafer 11, as shown in Figure 1a.

여기서, 상기 웨이퍼(11)상에 코팅된 포토레지스트(13)와 유기 반사방지막(12)은 코팅 후에 용매가 휘발하면서 그 끝단의 두께가 도 1b에 도시된 바와 같이, 두꺼워지게 된다. In this case, the photoresist 13 and the organic antireflection film 12 coated on the wafer 11 are thickened as a solvent volatilizes after coating, as shown in FIG. 1B.

이어, CMP 공정의 균일도(Uniformity)를 위하여 더미 샷(Dummy shot) 노광시에　상기　웨이퍼（１１）　에지부에　WEE(Wafer Edge Exposure)를 하여 원하지 않는 부분의 포토레지스트(13) 또는 유기 반사방지막(12)을 제거한다. Subsequently, the wafer edge exposure (WEE) is applied to the wafer (1 11) edge at the time of dummy shot exposure for uniformity of the CMP process. 12) Remove.

이때, 상기 노광 광원의 여광으로 인하여 패턴 이로젼(Pattern Erosion)이 발생되며 이로 인하여 파티클(Particle)이 발생되게 된다. At this time, a pattern erosion is generated due to the light of the exposure light source, and thus particles are generated.

상기 WEE 공정으로 웨이퍼（１１）　에지부의　두꺼워진 포토레지스트(13)의 부분은 제거 가능하지만, 상기 두꺼워진 상기 유기 반사방지막(12)은 노광되지 않으므로 제거되지 않게 된다. 　따라서, 후속 식각 공정을 실시하면 도 3에 나타난 바와 같이, 필름(Film)이 띠 형태로 잔류하게 된다. The portion of the thickened photoresist 13 in the wafer 11 edge portion can be removed by the WEE process, but the thickened organic antireflection film 12 is not exposed because it is not exposed. Therefore, when the subsequent etching process is performed, as shown in FIG. 3, the film remains in the form of a band.

그러나, 상기와 같은 종래의 반도체 소자의 제조방법은 다음과 같은 문제점이 있다. However, the conventional method of manufacturing a semiconductor device as described above has the following problems.

첫째, 유기 반사방지막과 포토레지스트의 끝단이 두꺼워져 원하지 않는 필름이 잔류하게 된다. First, the ends of the organic antireflection film and the photoresist become thick, leaving unwanted films.

둘째, WEE 처리 이후에 여광으로 인하여 패턴 일로젼(Erosion)이 발생되어 이로 인한 파티클이 발생되게 된다. Second, after the WEE treatment, pattern erosion is generated due to the light, which causes particles to be generated.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로 웨이퍼 에지에서의 끝단　두꺼워짐과　패턴 일로젼을 방지하여 파티클 발생을 억제시키기 위한 반도체 소자의 제조방법을 제공하는데 그 목적이 있다. Disclosure of Invention The present invention has been made to solve the above problems, and an object of the present invention is to provide a method of manufacturing a semiconductor device for suppressing particle generation by preventing edge thickening and pattern erosion at the wafer edge.

상기와 같은 목적을 달성하기 위한 본 발명에 따른 반도체 소자의 제조방법은　포토레지스트와의　접착력을　향상시키기　위하여　소수성　처리된　실리콘　웨이퍼에　있어서，　상기　웨이퍼의　에지에　친수성　처리하는　단계，　상기　웨이퍼상에　반사방지막과　포토레지스트를　차례로　형성하는　단계，　상기　웨이퍼의　에지부를　제외한　더미　패턴을　　노광하는　단계를　포함하여　이루어짐을　특징으로　한다． The semiconductor device manufacturing method according to the present invention for achieving the above object is in a hydrophobic silicon wafer treated to improve the adhesion to the photoresist, the step of hydrophilic treatment on the edge of the wafer, the reflection on the wafer It includes the steps of forming the protective film and the photoresist in turn, and exposing the dummy pattern except for the edge portion of the wafer.

이하, 첨부된 도면을 참조하여 본 발명에 따른 반도체 소자의 제조방법을 설명하면 다음과 같다. Hereinafter, a method of manufacturing a semiconductor device according to the present invention will be described with reference to the accompanying drawings.

도 3은 SiO2막의 친수성 처리 반응을 나타낸 도면이고, 도 4a는 본 발명의 실시예에 따른 웨이퍼의 평면도이고, 도 4b는 도 4a의 b-b' 방향의 상세 단면도이다. 3 is a view showing a hydrophilic treatment reaction of an SiO 2 film, FIG. 4A is a plan view of a wafer according to an embodiment of the present invention, and FIG. 4B is a detailed cross-sectional view of the b-b 'direction of FIG. 4A.

현재, 실리콘 웨이퍼(Si Wafer)에서의 포토 패터닝(Photo Patterning)시에　표면 실리콘(Si) 또는 실리콘 옥사이드(SiO2)상에　포토레지스트 코팅시 접착력을 좋게 하기 위하여 HMDS(HexaMethyleneDiSiloxane)를 이용하여 상기 SiO2막을 표면을 소수성으로 변화시켜 주고 있다. Currently, the SiO 2 film is formed using HexaMethyleneDiSiloxane (HMDS) in order to improve the adhesion when the photoresist is coated on surface silicon (Si) or silicon oxide (SiO 2) during photo patterning on a silicon wafer (Si Wafer). It makes the surface hydrophobic.

본　발명은　이러한　점에　착안하여 포토레지스트　도포　후　행해지는　WEE 공정　대신에，　포토레지스트를　도포하기　전에　웨이퍼　에지부　표면을　친수성　처리하여　형성하는　것이다． The present invention focuses on this point, instead of the WEE process, which is carried out after the application of the photoresist, the surface of the wafer is hydrophilic and formed before the photoresist is applied.

즉，　예를들어　도　３에　나타난　바와　같이　실리콘　산화막（SiO２）에　알코올과　HClO4로　촉매　반응을　일으켜　상기　실리콘　산화막의　표면에　－OH기가　형성하여　웨이퍼　에지에서　포토레지스트가　형성되지　않게　하는　것이다． That is, for example, as shown in Fig. 3, the reaction of the silicon oxide film (SiO2) with alcohol and HClO4 causes a catalytic reaction to prevent the formation of photo-OH groups on the surface of the silicon oxide film so that the photoresist is not formed on the wafer edge.

보다　구체적으로　그　제조　방법은　우선， 도 4a　 및　도　４b에　나타난　바와　같이　표면이　소수성　처리된　웨이퍼（４１）의　에지부　표면에　-OH　처리하여　웨이퍼　에지부（A）를　친수성화　한다． More specifically, the manufacturing method of the wafer is first made hydrophilic on the wafer edge portion (A) by treating the surface of the wafer portion (41) with the hydrophobic surface of the wafer (41), as shown in Figs. 4A and 4B.

이어，　상기　웨이퍼（４１）상에　유기　반사방지막（４２）과　포토레지 스트（４３）를　차례로　코팅（Coating）하면　도　４b에　도시된　바와　같이，　코팅　공정에서의　회전력에　의하여　친수성　처리된　부분（A）의　웨이퍼（４１）상에서는　상기　　유기　반사방지막（４２）　 및　포토레지스트（４３）가　형성되지　않는다． Subsequently, coating the organic anti-reflective film (42) and the photoresist (43) on the wafer (41) in turn, as shown in Fig. 4 (b), shows the hydrophilic treatment of the hydrophilic part in accordance with the rotational power in the coating process (A). ), The organic anti-reflective film (42) and the photoresist (43) are not formed on the wafer (41).

또한，　상기　유기　반사방지막（４２）의　에지가　상기　포토레지스트（４３）의　에지와　얼라인되어　형성되게　되며，　웨이퍼（４１）　에지부상에　형성되는　상기　유기　반사방지막（４２）과　포토레지스트（４３）는　균일한　두께를　갖게　된다． In addition, the edges of the organic antireflective coating (42) are aligned with the edges of the photoresist (43), and are formed on the wafer (41) edge portion. The organic antireflective coating (42) and the photoresist (43) are formed on the edge of the wafer (41). Is of uniform thickness.

상기와 같은 본 발명의 반도체　소자의　제조방법은 다음과 같은 효과가 있다. The method for manufacturing a semiconductor device of the present invention as described above has the following effects.

첫째，　유기　반사방지막　 및　포토레지스트　도포　전에　웨이퍼를　친수성　처리하여　더미　패턴　노광시에　별도의　웨이퍼　에지부　노광을　실시하지　않아도　되므로　포스트　코팅　딜레이（PCD)를　감소시킬　수　있다． First, it is possible to reduce the post-coating delay (PCD) since the wafers are hydrophilic before application of the organic anti-reflective coating and photoresist without the need to perform separate exposure to the wafer during the dummy pattern exposure.

둘째，　웨이퍼　에지부　노광　공정을　실시하지　않아서　에지부　노광　공정시　여광으로　인한　패턴　일로젼　현상을　방지할　수　있으므로　파티클　발생을　방지할　수　있다． Second, it is possible to prevent the occurrence of particle particles because the pattern erosion caused by the light exposure during the edge exposure process can be prevented without performing the wafer edge exposure process.

셋째，　웨이퍼　에지부에서　유기　방사방지막　 및　　포토레지스트가　두껍게　형성됨에　따라　발생되는　파티클을　방지할　수　있다． Third, it is possible to prevent particles from being generated as the organic anti-reflection film and photoresist are formed in the wafer edges thickly.

넷째，　더미　패턴　노광　공정시에　웨이퍼　에지부는　노광하지　않아도 　되므로　더미　패턴　노광　공정에서의　파티클　　제어가　용이해　진다． Fourth, since the wafer edge portion does not need to be exposed during the dummy pattern exposure process, particle control in the dummy pattern exposure process becomes easier.

Claims

In order to improve adhesion with the photoresist, it is placed on a hydrophobic silicon wafer.

Hydrophilic treatment on the edge of the wafer;

Forming an antireflection film and a photoresist on the wafer in turn;

A method of manufacturing a semiconductor element, characterized by the fact that the layer is formed, including the step of exposing a dummy pattern except for the edge portion of the wafer.

The method of manufacturing a semiconductor device according to claim 1, wherein the hydrophilic treatment process is characterized in that the addition of alcohol and HClO4 to the silicon wafer induces a catalytic reaction so that OH groups are formed.

The method of manufacturing a semiconductor device according to claim 1, wherein the organic antireflection film and the photoresist are formed on a region of the wafer excluding the hydrophilic treated wafer edge and characterized in that they are aligned at the edge thereof.