KR100580784B1 - Method for manufacturing electric contactor - Google Patents

Abstract

The present invention relates to a method of manufacturing an electrical contact.

According to the present invention, a method of manufacturing an electrical contact includes a support end connected to an upper end of an electrical component, a first beam part extending laterally from a support end, and a connection end and a connection end extending from the end of the first beam part perpendicular to the first beam part; An electrical contact body formed vertically extending from the connecting end to the side, and including a second beam part having a predetermined angle with the first beam part and a tip part extending in a direction opposite to the support end from the second beam part perpendicular to the end of the second beam part. In the manufacturing method, the first process step of forming the tip portion and the second beam portion on the sacrificial substrate by a MEMS process, the support end and the first beam portion on the electrical structure to be connected to the upper terminal of the electrical structure by the MEMS process A second process step of forming a third step of forming the connection end in at least one of the second beam part and the first beam part by a MEMS process; And a fourth process step of connecting the first beam part and the second beam part by bonding to each other by placing the connection end and a fifth process step of removing the sacrificial substrate.

Therefore, there is an effect that can change the shape of the tip portion variably.

Electrical contacts, electrical components, sacrificial substrates, bonding, tips

Description

Method for manufacturing electric contactor

1A to 1N are cross-sectional views illustrating a process of forming a tip portion, a second beam portion, and a first connection end of an electrical contact on a sacrificial substrate according to the present invention.

2A to 2K are cross-sectional views illustrating a process of forming a first beam portion, a support end, and a second connection end of an electrical contact portion on an electrical component according to the present invention.

3a to 5a show a method of connecting the first beam portion, the support end and the second connection end of the electrical contact on the sacrificial substrate with the tip, the second beam and the first connection end of the sacrificial substrate according to the invention; It is a process trial for demonstrating, and FIG. 3B-FIG. 5B is sectional drawing.

<Description of Symbols for Main Parts of Drawings>

 10: sacrificial substrate 12: oxide film

14 first photoresist 16 first photoresist pattern

18: oxide film pattern 20: hole

21 and 50: seed layer 22: second photoresist pattern

24: tip portion 26: second beam portion

28: third photoresist pattern 30: first connection end

32: gold plated layer 40: electrical structure

42: upper terminal 44: lower terminal

46: insulating film 48: internal circuit

52: fourth photoresist pattern 54: support end

56: fifth photoresist pattern 57: sacrificial metal layer

60: sixth photoresist pattern 62: first beam portion

64: seventh photoresist pattern 66: second connection end

68: solder ball

The present invention relates to a method for manufacturing an electrical contact, and more particularly, an electrical inspection of a semiconductor device having an area array type pad can be easily performed by varying the end shape of the contact. The present invention relates to a method for manufacturing an electrical contact.

In general, a semiconductor chip is implemented on a wafer by repeatedly performing a series of wafer processing processes such as an oxidation process, a diffusion process, an ion implantation process, a photolithography process, and a metal process.

Each chip implemented on such a wafer is sorted into normal and abnormal chips through an EDS (Electrical Die Sorting) process, and some of the abnormal chips selected by the EDS process are repaired and sliced together with the normal chips. Slicing) and repackaged and shipped out.

However, recently, after the completion of the EDS process, in order to solve problems such as time loss, increase in process cost, and decrease in productivity caused by slicing and packaging the respective chips, the chips are collectively provided for each chip implemented on the wafer. A wafer level packaging method of packaging is proposed and used.

The contact terminals and pads by the wafer-level packaging are arranged in an area, so that the electrical contact body undergoing a test process overcomes the limitations due to the pitch spacing between the pads of the semiconductor device and the arrangement of the pads. It should be proposed as a model to do this.

The applicant has proposed a model for this by filing "Electrical Contact and Manufacturing Method thereof" in Korean Patent Application No. 23552 on April 15, 2003.

In the method of manufacturing an electrical contact according to the Korean Patent Application No. 232552, forming a first passivation pattern defining a support end shape on a substrate, and forming a first conductive material inside an open portion of the first passivation pattern. Forming a supporting end by filling the first protective film pattern, removing the first protective film pattern, and forming a first sacrificial metal layer of a second conductive material on the substrate from which the first protective film pattern is removed. Planarizing an upper surface of the substrate to be exposed to the substrate; forming a second passivation pattern defining a shape of the first beam part extending from the support end; and embedding a first conductive material in the second passivation pattern; Forming a beam portion, the connecting end extending from an end portion of the first beam portion perpendicular to the first beam portion on a substrate on which the first beam portion is formed; Forming a third passivation layer pattern to form a connecting end by embedding a first conductive material in the third passivation layer pattern, removing the second passivation pattern and the third passivation layer pattern, and then forming a third passivation layer on the substrate. Forming a second sacrificial metal layer made of a conductive material, and then planarizing the upper surface of the substrate such that the connection end is exposed to the outside, wherein the connection end is perpendicular to the connection end on the substrate exposed to the outside. Forming a fourth passivation layer pattern extending and formed to define a shape of a second beam portion forming a predetermined angle with the first beam part; forming a second beam part by embedding a first conductive material in the fourth passivation layer pattern Step, extending from the second beam portion in the direction opposite to the support end perpendicular to the end of the second beam portion on the substrate on which the second beam portion is formed; Forming a fifth passivation layer pattern defining a shape of a tip contacting the test object, forming a tip by embedding a first conductive material in an open portion of the fifth passivation pattern, the fourth passivation layer pattern, and And removing the fifth passivation layer pattern, the first sacrificial metal layer, and the second sacrificial metal layer.

However, the method of manufacturing an electrical contact according to the Korean Patent Application No. 232552 has a problem that the end surface of the tip is flat so that the natural oxide film formed on the pad cannot be easily penetrated and contacted.

That is, there was a problem that the shape of the end of the tip cannot be changed variably.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing an electrical contact that can easily perform an electrical inspection on a semiconductor device on which an area array pad is formed by changing the shape of the end of the tip.

According to an aspect of the present invention, there is provided a method of manufacturing an electrical contact according to the present invention. A first beam portion and a connection end extending from the end of the first beam portion perpendicular to the first beam portion; and a second beam portion and a second angle extending from the connection end to the side perpendicular to the connection end and forming a predetermined angle with the first beam portion. In the manufacturing method of the electrical contact body comprising a tip portion extending from the second beam portion in the direction opposite to the support end perpendicular to the end of the two beam portion, the tip portion and the second beam portion by a MEMS (Micro Electro Mechanical System) process A first process step formed on the sacrificial substrate; A second process step of forming the support end and the first beam part on the electrical structure to be connected to the upper terminal of the electrical structure by a MEMS process; A third process step of forming the connection end in at least one of the second beam portion and the first beam portion by a MEMS process; A fourth process step of connecting the first beam part and the second beam part to each other by bonding by placing the connection end; And a fifth process step of removing the sacrificial substrate.

In this case, the first process step and the third process step, the step of forming a first protective film pattern on the sacrificial substrate; Forming a hole on the sacrificial substrate by performing an etching process using the first passivation layer pattern as a mask; Removing the first passivation layer pattern; Forming a second passivation layer pattern on the sacrificial substrate including the hole; Embedding a first conductive material in the second passivation pattern to integrally form the tip portion and the second beam portion; Forming a third passivation layer pattern on the sacrificial substrate on which the second beam part is formed; And embedding a first conductive material in the third passivation layer pattern to form a first connection end as the connection end.

The second process step and the third process step may include forming a fourth passivation layer pattern that opens an upper terminal of the electrical component; Embedding a first conductive material in the fourth passivation layer pattern to form the support end; Removing the fourth passivation layer pattern; Forming a fifth passivation layer pattern on the side of the support end on the electrical component from which the fourth passivation layer pattern has been removed; Filling a predetermined material in the fifth passivation layer pattern to form a sacrificial layer; Forming a sixth passivation layer pattern on the electrical component on which the sacrificial layer is formed; Embedding a first conductive material in the seventh passivation layer pattern to form the first beam part; Forming a seventh passivation layer pattern on the electrical component on which the first beam part is formed; Embedding a first conductive material in the seventh passivation layer pattern to form a second connection end as the connection end; Bonding the first connection end and the second connection end to each other; Removing the sacrificial substrate; And removing the sacrificial layer on the electrical component.

In addition, the fourth process step may be performed by flip chip bonding, and the first to seventh protective layer patterns may be formed by performing exposure and development processes on the photoresist.

In addition, the first conductive material may be made of nickel or a nickel alloy material, and the embedding of the first conductive material may be performed by electroplating.

In addition, the sacrificial layer may be made of a copper (Cu) material, the embedding of the sacrificial layer may be performed by electroplating.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A to 1N are cross-sectional views illustrating a process of forming a tip portion, a second beam portion, and a first connection end of an electrical contact on a sacrificial substrate according to the present invention.

 According to the present invention, a method of forming a tip portion, a second beam portion, and a first connection end of an electrical contact on a sacrificial substrate may include silicon having a constant orientation, such as (10), as shown in FIG. On the sacrificial substrate 10 of the material is formed a thin oxide film 12 used as an etching mask of the hole (Hole) to be formed by performing a subsequent etching process.

In this case, the oxide film 12 may be formed by a method such as thermal oxidation.

Next, as shown in FIG. 1B, the first photoresist 14 is thinly coated on the oxide film 12 as a photosensitive material. In this case, the first photoresist 14 may be coated using a spin coating method or the like.

Subsequently, as illustrated in FIG. 1C, the first photoresist pattern used as an etching mask for etching the lower oxide film 12 by continuously performing exposure and development processes on the first photoresist 14 ( 16).

Subsequently, as illustrated in FIG. 1D, an etching process is performed using the first photoresist pattern 16 as an etching mask to form an oxide layer pattern 18 functioning as a first passivation layer pattern. In this case, the etching process may selectively perform a known dry or wet etching process.

Next, as illustrated in FIG. 1E, the first photoresist pattern 16 is removed. In this case, the first photoresist pattern 18 may be removed by a wet or dry etching method using acetone (CH ₃ COOH).

Subsequently, as shown in FIG. 1F, a hole 20 is formed by performing a first etching process using the oxide layer pattern 18 in which the first photoresist pattern 16 is removed as an etching mask. do. In this case, the primary etching process may be performed by a wet etching process using an etchant in which potassium hydroxide (KOH) and a predetermined amount of deionized water (Deionizde water) are mixed at a predetermined ratio.

Next, as shown in FIG. 1G, the oxide layer pattern 18 is used as an etching mask, and SF ₆ , C ₄ F ₈ and O ₂ gases are used to perform a secondary etching process using a mixed gas mixed at a constant ratio. As a result, the depth of the hole 20 is further deepened and the bottom part is rounded. In this case, the secondary etching process is performed by a known reactive ion etching (RIE) called a Bosch process as one of deep trench etching methods.

 Subsequently, as illustrated in FIG. 1H, the oxide layer pattern 18 on the sacrificial substrate 10 on which the secondary etching process is performed is removed. In this case, the oxide layer pattern 18 may be removed by a known wet etching process using a chemical having an excellent etching selectivity with respect to the oxide layer.

Subsequently, as shown in FIG. 1I, a seed layer 21 serving as a seed for performing a subsequent electroplating process is formed on the sacrificial substrate 10. In this case, the seed layer 21 may be formed of a copper (Cu) and titanium (Ti) layer having a predetermined thickness, and the seed layer 21 may be formed by a sputtering process.

Next, as shown in FIG. 1J, a second photoresist pattern functioning as a second passivation layer pattern defining a shape of a second beam part to be formed by a subsequent process on the sacrificial substrate 10 having the seed layer formed thereon ( 22). In this case, the second photoresist pattern 22 may be formed by coating the photoresist on the sacrificial substrate 10 and then exposing and developing the photoresist.

Subsequently, as shown in FIG. 1K, a conductive material is embedded in the second photoresist pattern 22 by an electroplating process on the sacrificial substrate 10 on which the second photoresist pattern 22 is formed. 24 and the second beam portion 26 are formed at the same time, and then the upper surface thereof is flattened.

In this case, the second beam part 26 is integrally formed to the tip part 24 side, and a nickel alloy material such as nickel or nickel-cobalt may be used as the conductive material, and the planarization process is CMP (Chemical Mechanical Polishing). ) And grinding and the like can be used.

Subsequently, as shown in FIG. 1L, a third passivation layer pattern defining a shape of a first connection end to be formed by a subsequent process is formed on the sacrificial substrate 10 on which the tip part 24 and the second beam part 26 are formed. A functioning third photoresist pattern 28 is formed. In this case, the third photoresist pattern 28 may be formed by coating the photoresist on the sacrificial substrate 10 and then exposing and developing the photoresist.

Next, as illustrated in FIG. 1M, a conductive material is embedded in the third photoresist pattern 28 by an electroplating process on the sacrificial substrate 10 on which the third photoresist pattern 28 is formed. 24) After forming the first connection end 30 extending upwardly perpendicular to the second beam portion 26 on the opposite side, the upper surface is planarized. In this case, a nickel alloy material such as nickel (Ni) -cobalt (Co) may be used as the conductive material, and the planarization process may use a method such as CMP and grinding.

Further, by performing an electroplating process again on the sacrificial substrate 10 on which the first connection end 30 is formed, gold for improving wetting on the surface of the first connection end 30 exposed to the outside is formed. ) To form a gold plated layer (32).

Finally, as shown in FIG. 1N, the second photoresist pattern 22 and the third photoresist pattern 28 on the sacrificial substrate 10 on which the gold plating layer 32 is formed are removed by a wet etching process. In this case, the second photoresist pattern 22 and the third photoresist pattern 28 may be removed by a wet etching process and an ashing process.

2A to 2K are cross-sectional views illustrating a process of forming a first beam portion, a support end, and a second connection end of an electrical contact on an electrical component according to the present invention.

According to the present invention, a method for forming the first beam portion, the support end, and the second connection end of the electrical contact includes an upper terminal 42 and a lower terminal 44 connected to the internal circuit 48 as shown in FIG. 2A. Are each provided, and the lower terminal 44 prepares an electrical structure 40 such as a ceramic substrate, in which a peripheral portion thereof is blocked by the insulating layer 46.

A seed layer 50 is then formed on the electrical construct 40 which functions as a seed in a subsequent electroplating process. In this case, the seed layer 50 may be formed of two layers made of copper and titanium, and the seed layer 50 may be formed by a sputtering process.

Next, as shown in FIG. 2B, after forming the fourth photoresist pattern 52 with the fourth passivation layer pattern for limiting opening of the upper terminal 42 under the seed layer 50, the fourth photoresist pattern is formed. Using the 52 as an etching mask, the etching process is performed so that the upper terminal 42 is exposed. In this case, the fourth photoresist pattern 52 may be formed by coating the photoresist on the electrical structure 40, and then exposing and developing the photoresist.

Subsequently, as shown in FIG. 2C, after the conductive material is embedded in the fourth photoresist pattern 52 by electroplating, the upper end of the support material 54 connected to the upper terminal 42 is planarized. Form. In this case, a nickel alloy material such as nickel or nickel (Ni) -cobalt (Co) may be used as the conductive material, and the planarization process may use a method such as CMP and grinding.

Next, as shown in FIG. 2D, the fourth photoresist pattern 52 on the electrical structure 40 on which the support end 54 is formed is removed. In this case, the fourth photoresist pattern 52 may be performed by a wet etching process or a dry etching process using acetone (CH ₃ COOH).

Next, as shown in FIG. 2E, the support member 54 is extended to the region of the support end 54, that is, the support end 54, on the electrical component 40 from which the fourth photoresist pattern 52 has been removed. A fifth photoresist pattern 56 is formed as a fifth passivation layer pattern that forms a sacrificial metal layer serving to support the first beam portion. In this case, the fifth photoresist pattern 56 may be formed by coating the photoresist on the electrical structure 40, and then exposing and developing the photoresist.

Subsequently, as shown in FIG. 2F, a conductive material is embedded in the fifth photoresist pattern 56 by electroplating, and then the sacrificial metal layer 57 is formed by planarizing its top surface. In this case, copper (Cu) may be used as the conductive material, and the planarization process may use a method such as CMP and grinding.

Subsequently, as illustrated in FIG. 2G, the shape of the first beam part extended to the upper side of the support end 54 and supported by the sacrificial metal layer 57 is formed on the electrical component 40 on which the sacrificial metal layer 57 is formed. The sixth photoresist pattern 60 as the sixth protective film pattern is formed. In this case, the sixth photoresist pattern 60 may be formed by coating a photoresist on the electrical structure 40, and then exposing and developing the photoresist.

Next, as shown in FIG. 2H, the conductive material is embedded in the sixth photoresist pattern 60 by electroplating, and then the upper surface of the sixth photoresist pattern 60 is flattened to form the first beam part 62. In this case, a nickel alloy material such as nickel or nickel (Ni) -cobalt (Co) may be used as the conductive material, and the planarization process may use a method such as CMP and grinding.

Subsequently, a seventh limiting shape of the second connection end extending upward from the end of the first beam part 62 on the electrical component 40 on which the first beam part 62 is formed, as shown in FIG. 2I. A seventh photoresist pattern 64 as a protective film pattern is formed.

In this case, the seventh photoresist pattern 64 may be formed by coating the photoresist on the electrical structure 40, and then exposing and developing the photoresist.

Subsequently, as shown in FIG. 2J, the conductive material is embedded in the seventh photoresist pattern 64 by electroplating, and then the top surface thereof is planarized to form the second connection end 66. In this case, a nickel alloy material such as nickel (Ni) -cobalt (Co) may be used as the conductive material, and the planarization process may use a method such as CMP and grinding.

In addition, although not shown in the drawings, an electroplating process is performed again on the electrical structure 40 on which the second connection end 66 is formed, thereby improving wetting on the surface of the second connection end 66 exposed to the outside. Gold may be further plated to form a gold plated layer.

Finally, as shown in FIG. 2K, the seventh photoresist pattern 64, the sixth photoresist pattern 60, the fifth photoresist pattern 56, and the metal sacrificial layer 57 are removed. In this case, the seventh photoresist pattern 64, the sixth photoresist pattern 60, and the fifth photoresist pattern 56 may be removed by a wet etching method or a dry etching method using acetone (CH ₃ COOH). The sacrificial metal layer 57 may be removed by a wet etching process using a chemical having an excellent etching selectivity to copper.

 3a to 5a show a method of connecting the first beam portion, the support end and the second connection end of the electrical contact on the sacrificial substrate with the tip, the second beam and the first connection end of the sacrificial substrate according to the invention; 3 is a cross-sectional view thereof.

In the method of manufacturing the electrical contact according to the present invention, first, as shown in Figs. 3a and 3b, the electrical construction 40 as shown in Fig. 2k and the sacrificial substrate 10 as shown in Fig. 1n. After the preparation, a solder ball 68 is placed on the first connection end 30 on the sacrificial substrate 10 and the second connection end 66 on the electrical component 40, and thus known flip chip bonding is performed. bonding) by bonding process.

At this time, the second beam portion 26 on the sacrificial substrate 10 and the first beam portion 62 on the electrical component 40 are bonded to form an angle of 90 ° to form a predetermined angle with each other.

Next, the tip portion 24 and the second beam portion 26 are completely exposed to the outside by removing the sacrificial substrate 10 as shown in FIGS. 4A and 4B. In this case, the sacrificial substrate 10 may be removed by a wet etching process using potassium hydroxide (KOH) having an excellent etching selectivity to silicon.

Finally, the electrical contact is completed by removing the sacrificial metal layer 57 and the seed layer 50 on the electrical construction 40 as shown in FIGS. 5A and 5B. The copper of the sacrificial metal layer 57 and the seed layer 50 may be removed by wet etching using a chemical mixture of copper sulfate (CuSO ₄ ) and ammonium hydroxide (NH ₄ Cl) at a predetermined ratio, and the seed layer may be Titanium can be removed by wet etching with hydrogen fluoride (HF).

According to the present invention, there is an effect that the shape of the tip portion can be variably changed and an electrical contact body which can easily cope with an area array semiconductor device can be manufactured.

In the above, the present invention has been described only for the described embodiments, but it will be apparent to those skilled in the art that various modifications and modifications function within the scope of the present invention, and such modifications and modifications belong to the appended claims.

Claims (9)

Forming a tip portion and a second beam portion extending in one direction from the tip portion on the sacrificial substrate; Forming a support end connected to the upper terminal and a first beam part extending in one direction from the support end on an electrical component having a lower terminal and an upper terminal connected to each other; Bonding the second beam portion of the sacrificial substrate and the first beam portion of the electrical component; And Selectively removing the sacrificial substrate to expose the second beam portion and the tip portion connected to the first beam portion of the electrical component, In the bonding step, the first beam portion and the second beam portion is a method of manufacturing an electrical contact, characterized in that electrically connected with a predetermined angle that is not parallel. The method of claim 1, Forming the tip portion and the second beam portion on the sacrificial substrate Forming a hole in a predetermined region of the sacrificial substrate, the hole having an upper region of the sidewall perpendicular to the lower region of the inclined sidewall; Forming a first mask pattern on the sacrificial substrate, the first mask pattern having an opening defining a second beam part while exposing the hole; Forming a first conductive layer filling the opening and the hole of the first mask pattern; Etching the first conductive layer until the top surface of the first mask pattern is exposed to form the tip portion and the second beam portion respectively filling the hole and the opening; And Removing the first mask pattern. The method of claim 2, Forming the hole Forming a hole mask pattern on the sacrificial substrate to expose a region where the hole is to be formed; Forming a preliminary hole having an inclined sidewall by wet etching the upper surface of the exposed sacrificial substrate using the hole mask pattern as an etching mask; Dry etching the preliminary hole using the hole mask pattern as an etch mask to form the hole having an upper region of a sidewall perpendicular to a lower region of an inclined sidewall; And Removing the hole mask pattern; The forming of the preliminary hole may include wet etching using an etchant including potassium hydroxide and deionized water. The method of claim 2, Before forming the first mask pattern, further comprising forming a seed layer on a resultant product in which the hole is formed, Forming the first conductive film Forming the first conductive layer filling the opening and the hole of the first mask pattern by using an electroplating technique using a seed layer exposed through the first mask pattern as an electrode, The seed layer may be one of copper or titanium, And the first conductive film is one of conductive materials including nickel, nickel-cobalt and nickel alloy. The method of claim 1, Forming a support end and a first beam portion on the electrical component Forming a support end on the electrical component, the support end being connected to the upper terminal; And Forming the first beam part extending in one direction from the support end, while connecting to an upper surface of the support end, And forming a sacrificial metal layer disposed under the first beam part to support the first beam part after the supporting end is formed. The method of claim 5, wherein Forming the sacrificial metal layer is Forming a seed layer on an upper surface of the electrical component; Forming a second mask pattern having an opening exposing the seed layer on one side of the support end; Forming the sacrificial metal layer filling the opening of the second mask pattern using an electroplating technique using the seed layer as an electrode; And Planarizing etching the sacrificial metal layer until the top surface of the second mask pattern is exposed; And the sacrificial metal layer is formed of a metallic material different from the support end and the first beam part. The method of claim 1, Before bonding the first beam portion and the second beam portion, The method may further include forming a connection end at one end of at least one of the first beam unit and the second beam unit. In the planar position, the connecting end is formed in the region where the first beam portion and the second beam portion is connected, characterized in that the manufacturing method of the electrical contact. The method of claim 7, wherein Bonding the first beam portion and the second beam portion comprises bonding the connecting ends of the first beam portion and the second beam portion using flip chip bonding techniques. Way. The method of claim 1, The tip portion is formed to have a pointed end portion so as to penetrate the natural oxide film and easily contact the object under test, And the first beam portion and the second beam portion are bonded to have a predetermined non-parallel angle so as to provide an effective stress against external force in any direction.

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